A plasma chamber cleaning component, a plasma processing system, and a cleaning method

Abstract

The present invention belongs to the technical field of etching processes, and particularly relates to a plasma chamber cleaning component, a plasma processing system, and a cleaning method. Among them: The plasma chamber cleaning component includes a first metal electrode group, a second metal electrode group, and an insulating dielectric layer. The first metal electrode group and the second metal electrode group are arranged opposite to each other, and the insulating dielectric layer is arranged between the first metal electrode group and the second metal electrode group. The plasma chamber cleaning component is used to clean the deposits accumulated on the inner wall of the chamber liner after etching or coating processes. A plasma processing system having the plasma chamber cleaning component introduces radio frequency power into the plasma chamber cleaning component, so that the plasma gas directly impacts the side wall of the chamber for cleaning. A cleaning method for a plasma processing system effectively removes the deposits on the side wall of the chamber, thereby reducing the maintenance time and cost of the equipment and improving the process stability and repeatability of the equipment.

Description

Technical Field

[0001] The present invention belongs to the technical field of etching processes, and particularly relates to a plasma chamber cleaning component, a plasma processing system, and a cleaning method. Background Art

[0002] Currently, in the dry etching process of non-volatile materials such as Pt, Ru, Ni, Fe, Au, etc., the vapor pressure of the reaction products is relatively low, and the formed non-volatile products are difficult to be pumped away by the vacuum pump. As a result, the reaction products are continuously deposited on the surfaces of various components exposed to the plasma in the reaction chamber, including the dielectric window, the surface of the carrier device, the inner wall of the chamber, etc. If these reaction by-products cannot be removed in time, over time, it will lead to the drift of process parameters, resulting in a decline in process stability and repeatability; it will also cause particle contamination or the peeling off of deposits, affecting the process yield.

[0003] Performing periodic maintenance on the reaction chamber can reduce the impact of deposits on the process yield. The periodic maintenance of the chamber includes wiping, cleaning the reaction chamber, and replacing each component in the chamber, all of which require a certain amount of maintenance and recovery time, not only reducing the production efficiency but also increasing the operation and maintenance costs.

[0004] Another method is to use dry cleaning to remove the deposited products in the chamber. Dry cleaning usually uses the plasma generated by F-based gas to remove the Si or Si-based products deposited on the inner wall of the chamber under high pressure and high radio frequency power; then uses the plasma generated by O 2 to remove the C-based products. However, in order to ensure the cleaning effect, over-cleaning often occurs. The F-based gas will damage the coating on the inner wall of the chamber, shortening the service life of the coating; a too long cleaning time will reduce the production efficiency. In addition, due to the uneven distribution of the plasma and the blocking effect of the chamber liner, dry cleaning cannot effectively remove all the deposits adhering to the surfaces of the reaction chamber components, especially the deposits on the inner wall of the chamber liner are difficult to be cleaned. Summary of the Invention

[0005] The present invention provides a plasma chamber cleaning component, a plasma processing system, and a cleaning method, which can effectively remove the deposition of reaction by-products on the side walls of the chamber during the process, thereby reducing the maintenance time and cost of the equipment and improving the process stability and repeatability of the equipment.

[0006] The technical solution adopted by the present invention to solve its technical problems is: a plasma chamber cleaning component, the cleaning component is provided on the inner side wall of the plasma chamber, and the cleaning component includes: a first metal electrode group, a second metal electrode group, and an insulating dielectric layer, wherein:

[0007] The first metal electrode group includes a plurality of first metal electrode sheets and a first electrode connection part, and the second metal electrode group includes a plurality of second metal electrode sheets and a second electrode connection part;

[0008] Taking the axial direction of the plasma cavity as the rotation symmetry axis, a plurality of the first metal electrode sheets and a plurality of the second metal electrode sheets are arranged in a circumferentially crossed manner, and a plurality of the first metal electrode sheets and a plurality of the second metal electrode sheets jointly enclose a structure that is circumferentially crossed and conforms to the peripheral wall of the plasma cavity;

[0009] The tops of a plurality of the first metal electrode sheets are all connected to the first electrode connection part, and the bottoms of a plurality of the first metal electrode sheets are all free ends;

[0010] The bottoms of a plurality of the second metal electrode sheets are all connected to the second electrode connection part, and the tops of a plurality of the second metal electrode sheets are all free ends;

[0011] The insulating dielectric layer is interposed between the first metal electrode group and the second metal electrode group.

[0012] As a further preference of the present invention, the distances between adjacent first metal electrode sheets and the second metal electrode sheets are all the same.

[0013] As a further preference of the present invention, the distances between the free ends of a plurality of the first metal electrode sheets and the second electrode connection part are all the same.

[0014] As a further preference of the present invention, the distances between the free ends of a plurality of the second metal electrode sheets and the first electrode connection part are all the same.

[0015] As a further preference of the present invention, the distance between adjacent two first metal electrode sheets is the same as the distance between adjacent two second metal electrode sheets; the width of the first metal electrode sheet is the same as the width of the second metal electrode sheet; the distance between adjacent two second metal electrode sheets is h1, the width of the first metal electrode sheet is h2, and the thickness of each insulating dielectric layer is h3, then h1 = h2 + 2*h3.

[0016] A plasma processing system is also provided, including:

[0017] A plasma cavity, the plasma cavity includes: a cleaning component, a reaction chamber cavity and a chamber inner lining, the chamber inner lining is fitted and installed on the inner side wall of the reaction chamber cavity, and the cleaning component is located between the reaction chamber cavity and the chamber inner lining;

[0018] A first radio frequency power supply and a first radio frequency matcher, one end of the cleaning component is connected to the first radio frequency power supply through the first radio frequency matcher, and the other end of the cleaning component is grounded.

[0019] As a further preference of the present invention, the cleaning component is clamped between the cavity of the reaction chamber and the inner lining of the chamber;

[0020] Alternatively, the cleaning component is built into the inner lining of the chamber and integrally processed with the inner lining of the chamber.

[0021] As a further preference of the present invention, it further includes a first switching switch, and the first switching switch has two states: the first state, when it is necessary to clean the inner side wall of the plasma chamber, the first switching switch is connected to the first radio frequency matcher; the second state, when it is not necessary to clean the inner side wall of the plasma chamber, the first switching switch is grounded.

[0022] As a further preference of the present invention, the first electrode connection part is connected to the first radio frequency matcher, and the first radio frequency matcher is connected to the first radio frequency power supply; the first switching switch is provided between the first electrode connection part and the first radio frequency matcher; the second electrode connection part is grounded.

[0023] As a further preference of the present invention, the second electrode connection part is connected to the first radio frequency matcher, and the first radio frequency matcher is connected to the first radio frequency power supply; the first switching switch is provided between the second electrode connection part and the first radio frequency matcher; the first electrode connection part is grounded.

[0024] As a further preference of the present invention, it further includes a transformer, the transformer has a primary coil and a secondary coil, and both the first electrode connection part and the second electrode connection part are connected to the transformer; one end of the primary coil is connected to the first radio frequency matcher, the first radio frequency matcher is connected to the first radio frequency power supply, the other end of the primary coil is grounded, one end of the secondary coil is connected to a plurality of the first metal electrode sheets through the first electrode connection part, and the other end of the secondary coil is connected to a plurality of the second metal electrode sheets through the second electrode connection part.

[0025] A cleaning method for a plasma processing system is also provided, and the above-mentioned plasma processing system is used for cleaning operations. The cleaning method specifically includes the following steps:

[0026] Step 1, the first switching switch connects the first electrode connection part to the first radio frequency matcher;

[0027] Step 2, introduce a cleaning process gas into the cavity of the reaction chamber;

[0028] Step 3: Turn on the first radio frequency power supply;

[0029] Step 4: The first radio frequency matcher tunes the power of the first radio frequency power supply, and then the power of the first radio frequency power supply is coupled into the cleaning component to generate plasma;

[0030] Step 5: The plasma generated in Step 4 impacts on the inner wall of the chamber liner, cleaning the chamber liner;

[0031] Step 6: After the chamber liner is cleaned, turn off the first radio frequency power supply, and the first switch is grounded.

[0032] A cleaning method for a plasma processing system is also provided. The cleaning operation is performed using the above plasma processing system. The cleaning method specifically includes the following steps:

[0033] Step 1: Turn on the transformer and connect the first electrode connection part and the second electrode connection part to the first radio frequency matcher;

[0034] Step 2: Introduce a cleaning gas into the reaction chamber cavity;

[0035] Step 3: Turn on the first radio frequency power supply;

[0036] Step 4: The first radio frequency matcher tunes the power of the first radio frequency power supply, and then the power of the first radio frequency power supply is coupled into the cleaning component to generate plasma;

[0037] Step 5: The plasma generated in Step 4 impacts on the inner wall of the chamber liner, cleaning the chamber liner;

[0038] Step 6: After the chamber liner is cleaned, turn off the first radio frequency power supply and the transformer.

[0039] Through the above technical solutions, compared with the prior art, the present invention has the following beneficial effects:

[0040] 1. The plasma chamber cleaning component of the present invention is used for cleaning the deposits accumulated on the inner wall of the chamber liner inside the reaction chamber cavity after etching or coating processes.

[0041] 2. The plasma chamber cleaning component of the present invention generates a magnetic field on the inner wall of the reaction chamber cavity. After introducing radio frequency power, the plasma gas will directly impact on the side wall of the reaction chamber cavity, thereby directly cleaning the deposits on the side wall of the reaction chamber cavity.

[0042] 3. The present invention adopts the method of directly connecting several metal sheets through the electrode connection part, avoiding the problems of open circuit or sparking risks that may occur when each metal electrode sheet is connected separately by a wire when the cleaning power is too high.

[0043] 4. The present invention can effectively remove the deposition of reaction by-products on the side walls of the chamber during the process, thereby reducing the maintenance time and cost of the equipment and improving the process stability and repeatability of the equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] The present invention will be further described below in conjunction with the drawings and embodiments.

[0045] Figure 1 is a schematic diagram of the overall structure of the present invention;

[0046] Figure 2 is an unfolded view of the overall structure of the cleaning component of the present invention;

[0047] Figure 3 is a schematic diagram of the structure when the first method of introducing RF power is adopted in the present invention;

[0048] Figure 4 is a schematic diagram of the structure when the second method of introducing RF power is adopted in the present invention.

[0049] In the figure: 1. Reaction chamber cavity; 2. Chamber inner lining; 3. First RF power supply; 4. First RF matcher; 5. First switch; 7. Transformer; 8. Insulating dielectric layer; 9. Cleaning component; 10. First metal electrode group; 11. First metal electrode sheet; 12. First electrode connection part; 13. Second metal electrode group; 14. Second metal electrode sheet; 15. Second electrode connection part; 16. Bias electrode; 17. Substrate wafer; 18. Gas source inlet; 19. RF coil; 20. Second RF matcher; 21. Second RF power supply; 22. Dielectric window. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0050] The present invention will now be further described in detail with reference to the drawings. These drawings are all simplified schematic diagrams, only illustrating the basic structure of the present invention in a schematic manner, so they only show the components related to the present invention.

[0051] At present, there are two ways to clean the reaction chamber in the prior art. One is to periodically wipe and clean the reaction chamber and replace each component in the reaction chamber. This method requires a certain amount of maintenance and recovery time, which not only reduces production efficiency but also increases operation and maintenance costs. The other is to use dry cleaning to clean the deposition products in the reaction chamber. Since dry cleaning is usually carried out under high pressure and high radio frequency power, the plasma generated by F-based gas is used to remove the Si or Si-based products deposited on the inner wall of the chamber; then the plasma generated by O2 is used to remove the C-based products. In order to ensure the cleaning effect, this method often causes over-cleaning. The F-based gas will damage the coating on the inner wall of the chamber and shorten the service life of the coating; at the same time, too long cleaning time will reduce production efficiency. In addition, due to the uneven distribution of plasma and the blocking effect of the chamber liner 2, dry cleaning cannot effectively remove all the deposits adhering to the surface of the reaction chamber components, especially the deposits adhering to the side wall of the reaction chamber are difficult to be cleaned. To solve the above problems, the present application provides the following preferred implementation schemes, and the specific content is as follows:

[0052] Example 1

[0053] This embodiment provides a preferred implementation scheme, a plasma chamber cleaning assembly, as Figure 2 shown. The figure is a plane development view of the cleaning device. Based on the direction in the attached drawing, the cleaning assembly 9 includes a first metal electrode group 10, a second metal electrode group 13, and an insulating dielectric layer 8. Among them, the first metal electrode group 10 and the second metal electrode group 13 are arranged opposite to each other, and the insulating dielectric layer 8 is arranged between the first metal electrode group 10 and the second metal electrode group 13.

[0054] The above-mentioned first metal electrode group 10 includes a plurality of first metal electrode sheets 11 and a first electrode connection part 12. The above-mentioned second metal electrode group 13 includes a plurality of second metal electrode sheets 14 and a second electrode connection part 15. A plurality of first metal electrode sheets 11 and a plurality of second metal electrode sheets 14 are arranged in a circumferential cross arrangement on the surface with the middle part of the reaction chamber cavity 1 as the three-dimensional rotation symmetry axis; the top ends of a plurality of first metal electrode sheets 11 are all connection ends connected to the first electrode connection part 12, and the bottom ends of a plurality of first metal electrode sheets 11 are all free ends; the bottom ends of a plurality of second metal electrode sheets 14 are all connection ends connected to the second electrode connection part 15, and the top ends of a plurality of second metal electrode sheets 14 are all free ends; a plurality of first metal electrode sheets 11 and a plurality of second metal electrode sheets 14 have the same material and size.

[0055] As Figure 2As shown, based on the direction in the attached drawings, an insulating dielectric layer 8 is interposed between the first metal electrode group 10 and the second metal electrode group 13. To reduce power loss, the insulating material used for the insulating dielectric layer 8 should have as low a dielectric constant as possible, and at the same time, the dielectric breakdown strength of the insulating material should be as high as possible, such as ceramics, SiC, polyimide, polytetrafluoroethylene, air, vacuum layer, etc.

[0056] In the cleaning component 9 of the embodiment of the present invention: the distances between adjacent first metal electrode sheets 11 and second metal electrode sheets 14 are all the same; the distances between the free ends of several first metal electrode sheets 11 and the second electrode connection part 15 are all the same; the distances between the free ends of several second metal electrode sheets 14 and the first electrode connection part 12 are all the same. The distance between adjacent two first metal electrode sheets 11 is the same as the distance between adjacent two second metal electrode sheets 14; the width of the first metal electrode sheet 11 is the same as the width of the second metal electrode sheet 14; the distance between adjacent two second metal electrode sheets 14 is h1, the width of the first metal electrode sheet 11 is h2, and the thickness of each insulating dielectric layer 8 is h3, then h1 = h2 + 2 * h3. The distances between adjacent first metal electrode sheets 11 and second metal electrode sheets 14, the distances between the free ends of several first metal electrode sheets 11 and the second electrode connection part 15, and the distances between the free ends of several second metal electrode sheets 14 and the first electrode connection part 12 can be the same or different. Because according to the contamination degree in different regions of the reaction chamber cavity 1, by adjusting the width of the insulating dielectric layer 8 or / and the length of the first metal electrode sheet 11 or / and the length of the second metal electrode sheet 14, the cleaning efficiency of different regions can be adjusted to achieve the effect of uniform cleaning.

[0057] Based on the above plasma chamber cleaning component, this implementation also provides a plasma processing system, such as Figure 1 As shown, based on the direction in the attached drawings, the plasma processing system includes a chamber inner lining 2. In this implementation, the chamber inner lining 2 is made of ceramics. The chamber inner lining 2 is disposed inside the reaction chamber cavity 1, and the chamber inner lining 2 is adjacent to the reaction chamber cavity 1. The above cleaning component 9 is disposed between the reaction chamber cavity 1 and the chamber inner lining 2, or the above cleaning component 9 is built into the chamber inner lining 2 and integrally processed with the chamber inner lining 2.

[0058] The above-mentioned cleaning component 9 is installed between the reaction chamber cavity 1 and the chamber liner 2 as a detachable component. Moreover, it is necessary to insulate both between the cleaning component 9 and the reaction chamber cavity 1 and between the cleaning component 9 and the chamber liner 2. The function of the chamber liner 2 is to prevent particle contamination caused by plasma bombarding the metal electrode group during the cleaning process, or to prevent the plasma from reacting with the metal electrode group, which may cause the surface of the electrode to denature and affect the cleaning effect. In order to achieve high cleaning efficiency, the chamber liner 2 should be as thin as possible (to reduce the partial pressure), but this may lead to poor mechanical strength of the chamber liner 2. Therefore, the cleaning component 9 can be sintered into the chamber liner 2, and the metal electrode group should be as close as possible to the side of the chamber liner 2 where the plasma is exposed. To reduce the processing difficulty, the insulating dielectric layer 8 can be replaced by the ceramic of the chamber liner 2, that is, the two groups of metal electrode groups are directly embedded in the chamber liner 2. However, the ideal sintering method is to process a vacuum groove between the two metal electrode groups as the insulating dielectric layer 8. As a simplification, or for non-stringent processes, the two metal electrode groups can be directly placed on the surface of the chamber liner 2. At this time, the surfaces of the two metal electrode groups should have a protective coating that is corrosion-resistant and resistant to bombardment, and the two metal electrode groups and the insulating dielectric layer 8 should be seamlessly connected. The plane formed by the two metal electrode groups and the insulating dielectric layer 8 should be smooth and flat without any concave or protruding structures to reduce particle contamination generated when exposed to the plasma.

[0059] This plasma processing system also includes a first radio frequency power supply 3 and a first radio frequency matcher 4. One end of the above-mentioned cleaning component 9 is connected to the first radio frequency power supply 3. In order to easily generate plasma or maintain the stability of the plasma during the cleaning process, and also for the convenience of debugging and changing the cleaning process conditions, a first radio frequency matcher 4 is connected in series between the first radio frequency power supply 3 and the cleaning component 9. The other end of the above-mentioned cleaning component 9 is grounded.

[0060] A first switching switch 5 is arranged between the cleaning component 9 and the first radio frequency matcher 4. When cleaning the side wall of the chamber, the cleaning component 9 is connected to the first radio frequency matcher 4 through the first switching switch 5; when performing etching or coating processes, the first switching switch 5 between the cleaning component 9 and the first radio frequency matcher 4 is grounded.

[0061] This plasma system has two ways to introduce radio frequency power, which are specifically as follows:

[0062] As Figure 3As shown, based on the direction in the attached drawings, the first method: This plasma processing system further includes a first switching switch 5, and the first switching switch 5 has two states: In the first state, when it is necessary to clean the inner sidewall of the plasma chamber, the first switching switch 5 is connected to the first RF matcher 4; in the second state, when it is not necessary to clean the inner sidewall of the plasma chamber, the first switching switch 5 is grounded. The first electrode connection part 12 is connected to the first RF matcher 4, and the first RF matcher 4 is connected to the first RF power supply 3; when performing an etching or coating process, in order to prevent the cleaning component 9 from affecting the plasma distribution during the process, a first switching switch 5 is provided between the first electrode connection part 12 and the first RF matcher 4. At this time, the first switching switch 5 is grounded, and at the same time, the second electrode connection part 15 is grounded.

[0063] Or the second electrode connection part 15 is connected to the first RF matcher 4, and the first RF matcher 4 is connected to the first RF power supply 3; when performing an etching or coating process, in order to prevent the cleaning component 9 from affecting the plasma distribution during the process, a first switching switch 5 is provided between the second electrode connection part 15 and the first RF matcher 4. At this time, the first switching switch 5 is grounded, and at the same time, the first electrode connection part 12 is grounded.

[0064] This way of introducing RF power is only applicable to the case where both the grounded components inside the reaction chamber cavity 1 and the cleaning component 9 are rotationally symmetric about the middle part of the reaction chamber cavity 1. Otherwise, due to the uneven potential distribution caused by different grounding methods of the grounded components in the reaction chamber cavity 1, the sidewall cleaning will be uneven. The first switching switch 5 is used to control whether the cleaning component 9 is powered on. When performing an etching or coating process, the first switching switch 5 is grounded, and the cleaning component 9 is grounded and thus not powered on, preventing the cleaning component 9 from affecting the etching or coating process.

[0065] As Figure 4 shown, based on the direction in the attached drawings, the second method: This plasma processing system further includes a transformer 7, a first electrode connection part 12 and a second electrode connection part 15 respectively connecting a number of first metal electrode plates 11 and a number of second metal electrode plates 14, and is connected to the first RF power supply 3 through a 1:1 balance transformer or a transformer 7 of other multiples. One end of the primary coil of the transformer 7 is connected to the first RF power supply 3, and the other end is grounded. One end of the secondary coil of the transformer 7 is connected to a number of first metal electrode plates 11 via the first electrode connection part 12, and the other end of the secondary coil of the transformer 7 is connected to a number of second metal electrode plates 14 via the second electrode connection part 15. According to this connection method, the electric potentials between the first metal electrode group 10 and the second metal electrode group 13 are the same and in opposite directions, and the electric potentials of each electrode metal plate between the first metal electrode group 10 and the second metal electrode group 13 are the same, making the cleaning more uniform.

[0066] Based on the first way of introducing radio frequency power, this implementation provides a cleaning method for a plasma processing system. This cleaning method is used to clean the deposits accumulated on the side wall of the reaction chamber cavity 1 after the etching or coating process. Since there is a matching chamber liner 2 inside the reaction chamber cavity 1, that is, this cleaning method is to clean the deposits on the inner wall of the chamber liner 2 after the etching or coating process.

[0067] In the present invention, the cleaning method shares the reaction chamber cavity 1 and the gas source inlet 18 with the etching or coating process. A dielectric window 22 is provided at the top of the reaction chamber cavity 1, and a radio frequency coil 19 is provided above the dielectric window 22. One end of the radio frequency coil 19 is connected to the second radio frequency matcher 20, the second radio frequency matcher 20 is connected to the second radio frequency power supply 21, and the other end of the radio frequency coil 19 is grounded. The specific steps of this cleaning method are as follows:

[0068] Step 1: Stop the etching or coating process;

[0069] Step 2: The first switching switch 5 connects the first electrode connection part 12 to the first radio frequency matcher 4;

[0070] Step 3: Introduce a cleaning gas into the reaction chamber cavity 1 from the gas source inlet 18;

[0071] Step 4: Turn on the first radio frequency power supply 3;

[0072] Step 5: The first radio frequency matcher 4 tunes the power of the first radio frequency power supply 3, and then the power of the first radio frequency power supply 3 is coupled into the cleaning component 9 to generate plasma;

[0073] Step 6: The plasma generated in Step 5 impacts on the inner wall of the chamber liner 2 to clean the chamber liner 2;

[0074] Step 7: After the chamber liner 2 is cleaned, turn off the first radio frequency power supply 3, and the first switching switch 5 is grounded.

[0075] Based on the second way of introducing radio frequency power, this implementation provides a cleaning method for a plasma processing system. This cleaning method is used to clean the side wall of the reaction chamber cavity 1 after the etching or coating process. Since the inner wall of the reaction chamber cavity 1 is provided with a chamber liner 2, that is, this cleaning method is to clean the deposits on the inner wall of the chamber liner 2 after the etching or coating process.

[0076] This cleaning method shares the reaction chamber cavity 1 and the gas source inlet 18 with the etching or coating process. A dielectric window 22 is provided at the top of the reaction chamber cavity 1, and a radio frequency coil 19 is provided above the dielectric window 22. One end of the radio frequency coil 19 is connected to the second radio frequency matcher 20, the second radio frequency matcher 20 is connected to the second radio frequency power supply 21, and the other end of the radio frequency coil 19 is grounded. The specific steps of this cleaning method are as follows:

[0077] Step 1: Stop the etching or coating process;

[0078] Step 2: Turn on the transformer 7 to connect the first electrode connection part 12 and the second electrode connection part 15 to the first RF matcher 4; one end of the primary coil of the transformer 7 is connected to the first RF power supply 3, one end of the secondary coil of the transformer 7 is connected to the first electrode connection part 12, and the other end of the secondary coil of the transformer 7 is connected to the second electrode connection part 15, so that the cleaning component 9 is connected to the first RF power supply 3.

[0079] Step 3: Introduce the cleaning process gas into the reaction chamber cavity 1;

[0080] Step 4: Turn on the first RF power supply 3;

[0081] Step 5: The first RF matcher 4 tunes the power of the first RF power supply 3, and then the power of the first RF power supply 3 is coupled into the cleaning component 9 to generate plasma;

[0082] Step 6: The plasma generated in Step 5 impacts on the inner wall of the chamber liner 2 to clean the chamber liner 2;

[0083] Step 7: After the chamber liner 2 is cleaned, turn off the first RF power supply 3 and the transformer 7.

[0084] Before implementing the cleaning method corresponding to the above two ways of introducing RF power, to prevent the deposited matter washed down from falling on the bias electrode 16 in the middle of the reaction chamber cavity 1 and causing damage to the bias electrode 16, a liner wafer 17 can be covered on the bias electrode 16 in the center of the reaction chamber cavity 1. If the wafer contains a metal or metal compound film layer, the cleaning process gas includes one or more of F-containing gases (such as SF6, CF4), O2, N2, Ar, Kr, Xe, and alcohol gases; when performing the sidewall cleaning process, the surface of the liner wafer 17 contains silicon oxide or silicon nitride, the sidewall cleaning process gas includes one or more of F-containing gases (such as SF6, CF4), O2, N2, Ar, Kr, Xe, and alcohol gases, and the power range of the first RF power supply 3 is 50 - 5000W.

[0085] To reduce the equipment cost, minimize the equipment volume, and simplify the installation and maintenance processes, the radio frequency coil 19 and the cleaning component 9 can share a set of radio frequency power supplies. That is, either the first radio frequency power supply 3 or the second radio frequency power supply 21 is used. At the same time, the radio frequency coil 19 and the cleaning component 9 are connected in parallel to the same radio frequency matcher (i.e., either the first radio frequency matcher 4 or the second radio frequency matcher 20 is used). The switching between connecting the radio frequency power to the radio frequency coil 19 (for etching or coating processes) and connecting the radio frequency power to the cleaning component 9 (for cleaning the sidewalls of the chamber) can be achieved through a switching switch. A capacitor is provided between the radio frequency coil 19 and the second radio frequency matcher 20 and / or an inductor is provided between the cleaning component 9 and the first radio frequency matcher 4 to reduce the difference between the impedance when the radio frequency power is applied to the radio frequency coil 19 and the impedance when the radio frequency power is applied to the cleaning component 9, and to narrow the required tuning range of the radio frequency matcher. When the switching switch is used to conduct the radio frequency matcher and the radio frequency coil 19, the radio frequency matcher is disconnected from the cleaning component 9; when the radio frequency matcher is conducted with the cleaning component 9, the radio frequency matcher is disconnected from the radio frequency coil 19.

[0086] The beneficial effects of this application are as follows:

[0087] This cleaning component 9 is used to clean the deposits adhering to the reaction chamber cavity 1 after the etching or coating process.

[0088] This cleaning component 9 generates a magnetic field on the inner wall of the reaction chamber cavity 1. After introducing the radio frequency power, the plasma gas will directly impact the sidewall of the reaction chamber cavity 1, thereby directly cleaning the deposits on the sidewall of the reaction chamber cavity 1.

[0089] This implementation adopts the method of directly connecting several metal sheets through the electrode connection part, avoiding the problem that each metal electrode sheet is individually connected by a wire, which may cause the risk of open circuit or arcing when the cleaning power is too high.

[0090] This implementation can effectively remove the deposition of reaction by-products on the sidewalls of the chamber during the process, thereby reducing the maintenance time and cost of the equipment and improving the process stability and repeatability of the equipment.

[0091] Those skilled in the art of this technology can understand that, unless otherwise defined, all terms (including technical terms and scientific terms) used here have the same meaning as the general understanding of those of ordinary skill in the art in the field to which this application belongs. It should also be understood that terms defined in general dictionaries should be understood to have a meaning consistent with the meaning in the context of the prior art, and will not be interpreted with idealized or overly formal meanings unless defined as here.

[0092] The meaning of "and / or" described in this application refers to the situation where each exists alone or both exist simultaneously.

[0093] As used in this application, the term "connection" can mean either a direct connection between components or an indirect connection between components through other components.

[0094] Based on the above ideal embodiments of the present invention as an inspiration, through the above description, relevant staff can completely make various changes and modifications without departing from the technical idea of this invention. The technical scope of this invention is not limited to the content in the specification, and its technical scope must be determined according to the scope of the claims.

Claims

1. A cleaning component for a plasma chamber, characterized in that: The cleaning component (9) is provided on the inner side wall of the plasma chamber, and the cleaning component (9) includes: a first metal electrode group (10), a second metal electrode group (13), and an insulating dielectric layer (8), wherein: The first metal electrode group (10) includes a plurality of first metal electrode sheets (11) and a first electrode connection part (12), and the second metal electrode group (13) includes a plurality of second metal electrode sheets (14) and a second electrode connection part (15); Taking the axial direction of the plasma chamber as the rotation symmetry axis, a plurality of the first metal electrode sheets (11) and a plurality of the second metal electrode sheets (14) are arranged in a circumferential cross pattern, and a plurality of the first metal electrode sheets (11) and a plurality of the second metal electrode sheets (14) jointly enclose a structure conforming to the peripheral wall of the plasma chamber; The tops of a plurality of the first metal electrode sheets (11) are all connected to the first electrode connection part (12), and the bottoms of a plurality of the first metal electrode sheets (11) are all free ends; The bottoms of a plurality of the second metal electrode sheets (14) are all connected to the second electrode connection part (15), and the tops of a plurality of the second metal electrode sheets (14) are all free ends; The insulating dielectric layer (8) is sandwiched between the first metal electrode group (10) and the second metal electrode group (13).

2. The cleaning component for a plasma chamber according to claim 1, characterized in that: The distance between each adjacent first metal electrode sheet (11) and the second metal electrode sheet (14) is the same.

3. The cleaning component for a plasma chamber according to claim 2, characterized in that: The distances between the free ends of a plurality of the first metal electrode sheets (11) and the second electrode connection part (15) are the same.

4. The cleaning component for a plasma chamber according to claim 3, characterized in that: The distances between the free ends of a plurality of the second metal electrode sheets (14) and the first electrode connection part (12) are the same.

5. The cleaning component for a plasma chamber according to claim 4, characterized in that: The distance between two adjacent first metal electrode sheets (11) is the same as the distance between two adjacent second metal electrode sheets (14); the width of the first metal electrode sheet (11) is the same as the width of the second metal electrode sheet (14); the distance between two adjacent second metal electrode sheets (14) is h1, the width of the first metal electrode sheet (11) is h2, and the thickness of each insulating dielectric layer (8) is h3, then h1 = h2 + 2 * h3.

6. A plasma processing system, characterized in that, comprising: Plasma chamber, the plasma chamber comprising: a cleaning component of the plasma chamber according to any one of claims 1-5, a reaction chamber body (1) and a chamber inner lining (2), the chamber inner lining (2) being fitted and installed on the inner side wall of the reaction chamber body (1), and the cleaning component (9) being located between the reaction chamber body (1) and the chamber inner lining (2); A first radio frequency power supply (3) and a first radio frequency matcher (4), one end of the cleaning component (9) being connected to the first radio frequency power supply (3) through the first radio frequency matcher (4), and the other end of the cleaning component (9) being grounded.

7. A plasma processing system according to claim 6, characterized in that: The cleaning component (9) is clamped between the reaction chamber body (1) and the chamber inner lining (2); alternatively, the cleaning component (9) is built into the chamber inner lining (2) and integrally formed with the chamber inner lining (2).

8. A plasma processing system according to claim 7, characterized in that: It further includes a first switching switch (5), the first switching switch (5) having two states: the first state, when it is necessary to clean the inner side wall of the plasma chamber, the first switching switch (5) is connected to the first radio frequency matcher (4); the second state, when it is not necessary to clean the inner side wall of the plasma chamber, the first switching switch (5) is grounded.

9. A plasma processing system according to claim 8, characterized in that: The first electrode connection part (12) is connected to the first radio frequency matcher (4), the first switching switch (5) is provided between the first electrode connection part (12) and the first radio frequency matcher (4), and the second electrode connection part (15) is grounded.

10. A plasma processing system according to claim 8, characterized in that: The second electrode connection part (15) is connected to the first radio frequency matcher (4), the first switching switch (5) is provided between the second electrode connection part (15) and the first radio frequency matcher (4), and the first electrode connection part (12) is grounded.

11. A plasma processing system according to claim 7, characterized in that: It further includes a transformer (7), the transformer (7) having a primary coil and a secondary coil, and both the first electrode connection part (12) and the second electrode connection part (15) are connected to the transformer (7); One end of the primary coil is connected to the first radio frequency matcher (4), the other end of the primary coil is grounded, one end of the secondary coil is connected to a plurality of the first metal electrode plates (11) via the first electrode connection part (12), and the other end of the secondary coil is connected to a plurality of the second metal electrode plates (14) via the second electrode connection part (15).

12. A cleaning method for a plasma processing system, characterized in that, A cleaning operation is performed using the plasma processing system according to any one of claims 9-10, specifically including the following steps: Step 1: The first switching switch (5) connects the first electrode connection part (12) to the first RF matcher (4). Step 2: Introduce a cleaning process gas into the reaction chamber cavity (1). Step 3: Turn on the first RF power supply (3). Step 4: The first RF matcher (4) tunes the power of the first RF power supply (3), and then the power of the first RF power supply (3) is coupled into the cleaning component (9) to generate plasma. Step 5: The plasma generated in Step 4 impacts on the inner wall of the chamber liner (2) to clean the chamber liner (2). Step 6: After the chamber liner (2) is cleaned, turn off the first RF power supply (3), and the first switching switch (5) is grounded.

13. A cleaning method for a plasma processing system characterized in that the cleaning operation is performed using the plasma processing system according to any one of claims 9-11, and specifically includes the following steps: Step 1: Turn on the transformer (7) to connect the first electrode connection part (12) and the second electrode connection part (15) to the first RF matcher (4). Step 2: Introduce a cleaning gas into the reaction chamber cavity (1). Step 3: Turn on the first RF power supply (3). Step 4: The first RF matcher (4) tunes the power of the first RF power supply (3), and then the power of the first RF power supply (3) is coupled into the cleaning component (9) to generate plasma. Step 5: The plasma generated in Step 4 impacts on the inner wall of the chamber liner (2) to clean the chamber liner (2). Step 6: After the chamber liner (2) is cleaned, turn off the first RF power supply (3) and the transformer (7).

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