Substrate processing apparatus

Abstract

A substrate processing apparatus is provided. The substrate processing apparatus includes a first process chamber having a first processing space therein, a second process chamber having a second processing space therein, and an exhaust unit for exhausting atmospheres of the first processing space and the second processing space, wherein the exhaust unit includes an integrated exhaust line, a first exhaust line connecting the first process chamber and the integrated exhaust line, a second exhaust line connecting the second process chamber and the integrated exhaust line, and a partition wall separating a portion of a flow path within the integrated exhaust line into a first flow path and a second flow path, a fluid exhausted through the first exhaust line flowing through the first flow path, a fluid exhausted through the second exhaust line flowing through the second flow path.

Description

[0001] Cross-references to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2021-0073629, filed with the Korean Patent Office on June 7, 2021, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The present invention relates to a substrate processing apparatus, and more specifically, to a substrate processing apparatus for performing a developing process. Background Technology

[0004] To manufacture semiconductor devices, various processes such as cleaning, deposition, photographing, etching, and ion implantation are performed. Among these processes, photographic processes include: a coating process that forms a film by applying a photoresist (such as photoresist) to the surface of a substrate; an exposure process that transfers a circuit pattern to the film formed on the substrate; and a developing process that selectively removes the film formed in areas of the substrate where the exposure process has been performed or in areas opposite to those areas.

[0005] Figure 1 A view of a typical substrate processing apparatus is shown schematically. (Refer to...) Figure 1 The substrate processing apparatus 8000 includes a first process chamber 8100 and a second process chamber 8200. The first process chamber 8100 includes a first processing container 8110 having a processing space, a first support unit 8120 supporting and rotating the substrate W within the processing space, and a first discharge line 8130 for discharging atmosphere from the processing space. The second process chamber 8200 includes a second processing container 8210 having a processing space, a second support unit 8220 supporting and rotating the substrate W within the processing space, and a second discharge line 8230 for discharging atmosphere from the processing space. The first discharge line 8130 and the second discharge line 8230 are connected to an integrated discharge line 8300. The first discharge line 8130, the second discharge line 8230, and a decompression unit 9000 are arranged sequentially. Fluid discharged from each of the first discharge line 8130 and the second discharge line 8230 flows in the direction in which the decompression unit is installed in the integrated discharge line.

[0006] Therefore, the first discharge line 8130 is farther from the pressure reducing unit 9000 than the integrated discharge line 8300 and the second discharge line 8230, causing the discharge from the first process chamber 8100 to the processing space to be less smooth compared to the second process chamber 8200. Furthermore, the airflow from the first discharge line 8130 into the integrated discharge line 8300 and the airflow from the second discharge line 8230 into the integrated discharge line 8300 collide at point A, resulting in eddies. Consequently, the internal pressure of the second process chamber 8200 connected to the second discharge line 8230 changes. The internal atmosphere of the second process chamber 8200 cannot be discharged smoothly.

[0007] In other words, the pressure reduction unit 9000 is located further away from the first process chamber 8100 than the second process chamber 8200, resulting in a relatively less stable discharge from the first process chamber 8100 compared to the discharge from the second process chamber 8200. Furthermore, vortices are formed due to airflow collisions in the portion of the integrated discharge line 8300 connecting to the second discharge line 8230. The discharge of the internal atmosphere of the second process chamber 8200 cannot proceed smoothly. Therefore, it is difficult to control the pressure within the internal processing space of each process chamber used to perform the developing process. Changes in internal pressure occur in each process chamber, thereby causing process defects during the developing process. Summary of the Invention

[0008] This invention aims to provide a substrate processing apparatus that can reduce discharge interference between multiple process chambers.

[0009] The present invention also aims to provide a substrate processing apparatus capable of resolving internal pressure deviations between multiple process chambers.

[0010] The purpose of this invention is not limited thereto, and other purposes not mentioned will be clearly understood by those skilled in the art from the following description.

[0011] An exemplary embodiment of the present invention provides a substrate processing apparatus, comprising: a first process chamber having a first processing space; a second process chamber having a second processing space; and a discharge unit for discharging atmosphere from the first and second processing spaces, wherein the discharge unit comprises: an integrated discharge line; a first discharge line connecting the first process chamber and the integrated discharge line; a second discharge line connecting the second process chamber and the integrated discharge line; and a partition wall dividing a portion of a flow path within the integrated discharge line into a first flow path and a second flow path, wherein fluid discharged through the first discharge line flows through the first flow path, and fluid discharged through the second discharge line flows through the second flow path.

[0012] According to an exemplary embodiment, the partition wall can be configured to separate the first flow path and the second flow path by a predetermined distance along the longitudinal direction of the integrated discharge pipeline.

[0013] According to an exemplary embodiment, the pressure reducing unit is installed in the integrated discharge pipeline, and the first discharge pipeline, the second discharge pipeline, and the pressure reducing unit are arranged sequentially along the longitudinal direction of the integrated discharge pipeline.

[0014] According to an exemplary embodiment, the discharge unit may further include: a first damper that regulates the discharge flow rate of a first flow path; and a second damper that regulates the discharge flow rate of a second flow path.

[0015] According to an exemplary embodiment, between the first discharge pipeline and the second discharge pipeline, one end of the partition wall may contact the first sidewall of the inner wall of the integrated discharge pipeline, and the other end of the partition wall may be located between the first sidewall and the second sidewall facing the first sidewall.

[0016] According to an exemplary embodiment, each of the first discharge line and the second discharge line can be connected to the first sidewall, and between the first point and the second point, one end of the partition wall can be located closer to the second point. At the point where the first discharge line and the first sidewall are connected, the first point is adjacent to the second discharge line, and at the point where the second discharge line and the first sidewall are connected, the second point is adjacent to the first discharge line.

[0017] According to an exemplary embodiment, the partition wall may include: a first portion extending from one end of the partition wall; and a second portion extending from the first portion to the other end of the partition wall, wherein the first portion may be configured to slope downward in a direction from upstream to downstream of the integrated discharge line, and the second portion may extend from the first portion in a direction toward the downstream of the integrated discharge line.

[0018] According to an exemplary embodiment, the first portion can extend from one end of the partition wall to the midpoint between the first sidewall and the second sidewall.

[0019] According to an exemplary embodiment, each of the first process chamber and the second process chamber may be configured to perform a development process on a substrate.

[0020] Another exemplary embodiment of the present invention provides a substrate processing apparatus, the substrate processing apparatus comprising: a first process chamber having a first processing space; a second process chamber having a second processing space; a transfer robot for transferring a substrate to the first process chamber or the second process chamber; and an exhaust unit for exhausting the atmosphere of the first processing space and the second processing space, wherein the first process chamber comprises: a first processing container providing the first processing space; a first support unit supporting and rotating the substrate in the first processing space; and a first developer supply unit supplying developer to the substrate; and the second process chamber comprising: a second The second processing container provides a second processing space; a second support unit supports and rotates a substrate in the second processing space; a second developer supply unit supplies developer to the substrate; and a discharge unit includes: an integrated discharge line; a first discharge line connecting a first process chamber and the integrated discharge line; a second discharge line connecting a second process chamber and the integrated discharge line; and a partition wall that separates a first flow path and a second flow path in the integrated discharge line at a predetermined distance along the longitudinal direction of the integrated discharge line, wherein fluid discharged through the first discharge line flows through the first flow path and fluid discharged through the second discharge line flows through the second flow path.

[0021] According to an exemplary embodiment, a pressure reducing unit can be installed in an integrated discharge pipeline, which provides negative pressure to the integrated discharge pipeline, and the first discharge pipeline, the second discharge pipeline, and the pressure reducing unit can be arranged sequentially along the longitudinal direction of the integrated discharge pipeline.

[0022] According to an exemplary embodiment, the discharge unit may further include: a first regulator that regulates the discharge flow rate of a first flow path; and a second regulator that regulates the discharge flow rate of a second flow path.

[0023] According to an exemplary embodiment, between the first discharge pipeline and the second discharge pipeline, one end of the partition wall may contact the first sidewall of the inner wall of the integrated discharge pipeline, and the other end of the partition wall may be located between the first sidewall and the second sidewall facing the first sidewall.

[0024] According to an exemplary embodiment, each of the first discharge line and the second discharge line can be connected to the first sidewall, and between the first point and the second point, one end of the partition wall can be located closer to the second point. At the point where the first discharge line and the first sidewall are connected, the first point is adjacent to the second discharge line, and at the point where the second discharge line and the first sidewall are connected, the second point is adjacent to the first discharge line.

[0025] According to an exemplary embodiment, between the first point and the second point, one end of the partition wall may be located closer to the second point. At the point where it connects to the first discharge line and the first sidewall, the first point is adjacent to the second discharge line, and at the point where it connects to the second discharge line and the first sidewall, the second point is adjacent to the first discharge line.

[0026] According to an exemplary embodiment, the first portion can extend from one end of the partition wall to the midpoint between the first sidewall and the second sidewall.

[0027] According to an exemplary embodiment, the discharge unit may further include: a first valve that opens and closes a first discharge line or regulates the discharge flow rate; and a second valve that opens and closes a second discharge line or regulates the discharge flow rate.

[0028] Another exemplary embodiment of the present invention provides a substrate processing apparatus, comprising: a first process chamber having a first processing space; a second process chamber having a second processing space; and a discharge unit discharging atmosphere from the first and second processing spaces, wherein the discharge unit comprises: an integrated discharge pipeline; a first discharge pipeline connecting the first process chamber and the integrated discharge pipeline; a second discharge pipeline connecting the second process chamber and the integrated discharge pipeline; a partition wall preventing discharge interference between the first and second process chambers; and a pressure reducing unit installed in the integrated discharge pipeline, wherein the first discharge pipeline, the second discharge pipeline, and the pressure reducing unit are sequentially arranged along the longitudinal direction of the integrated discharge pipeline; a first flow path and a second flow path are provided in the integrated discharge pipeline, wherein fluid discharged through the first discharge pipeline flows through the first flow path, and fluid discharged through the second discharge pipeline flows through the second flow path, and the partition wall separates the first and second flow paths by a predetermined distance along the longitudinal direction of the integrated discharge pipeline.

[0029] According to an exemplary embodiment, the discharge unit may further include: a first regulator that regulates the discharge flow rate of a first flow path; and a second regulator that regulates the discharge flow rate of a second flow path.

[0030] According to an exemplary embodiment, each of the first and second discharge lines can be connected to a first sidewall of the inner wall of the integrated discharge line, and the partition wall can include: a first portion extending from one end in contact with the first sidewall between the first and second discharge lines; and a second portion extending from the first portion to another end located between the first sidewall and a second sidewall facing the first sidewall, wherein the first portion is configured to slope downward in a direction from upstream to downstream of the integrated discharge line, and the second portion extends in a direction toward the downstream of the integrated discharge line.

[0031] According to an exemplary embodiment of the present invention, discharge interference between multiple process chambers can be reduced.

[0032] Furthermore, according to an exemplary embodiment of the present invention, a substrate processing apparatus capable of addressing internal pressure variations between multiple process chambers can be provided.

[0033] The effects of the present invention are not limited to those described above, and those skilled in the art will clearly understand from the specification and drawings any effects not mentioned. Attached Figure Description

[0034] Figure 1 A cross-sectional view of a typical substrate processing apparatus chamber is shown schematically.

[0035] Figure 2 A perspective view of a substrate processing apparatus according to an exemplary embodiment of the present invention is shown for illustrative purposes.

[0036] Figure 3 To show Figure 2 A front view of a substrate processing apparatus for coating blocks or developing blocks.

[0037] Figure 4 for Figure 2 A top view of the substrate processing apparatus.

[0038] Figure 5 To show the provided Figure 4 A diagram of an embodiment of the hand part of the delivery chamber.

[0039] Figure 6 For illustrative purposes only Figure 4 Top plan view of an embodiment of a heat treatment chamber.

[0040] Figure 7 for Figure 6 A front view of the heat treatment chamber.

[0041] Figure 8 For illustrative purposes only Figure 4 A figure of an exemplary embodiment of a liquid handling chamber.

[0042] Figure 9 For illustrative purposes only Figure 8 A figure shows an exemplary embodiment of the discharge unit.

[0043] Figure 10 for Figure 9 An enlarged perspective view of an exemplary embodiment of the partition wall.

[0044] Figure 11 For illustrative purposes only Figure 9 A diagram showing the airflow in the exhaust unit. Detailed Implementation

[0045] In the following description, exemplary embodiments of the invention will be described in more detail with reference to the accompanying drawings. Exemplary embodiments of the invention may be modified in various ways, and the scope of the invention should not be construed as limited to the exemplary embodiments described below. Exemplary embodiments are provided to explain the invention more fully to those skilled in the art. Therefore, the shapes of components in the drawings are exaggerated for clearer illustration.

[0046] In the following text, reference will be made to Figures 2 to 11 The embodiments of the present invention are described in detail below.

[0047] Figure 2 This is a schematic perspective view of a substrate processing apparatus according to an exemplary embodiment of the present invention, and Figure 3 for Figure 2 A front view of the substrate processing apparatus. Figure 4 for Figure 2 A top view of the substrate processing apparatus.

[0048] Reference Figures 2 to 4 The substrate processing apparatus 1 includes an index module 10, a processing module 20, and an interface module 50. According to an embodiment, the index module 10, the processing module 20, and the interface module 50 are arranged sequentially in a line. Hereinafter, the direction in which the index module 10, the processing module 20, and the interface module 50 are arranged is defined as a first direction 2, a direction perpendicular to the first direction 2 when viewed from above is defined as a second direction 4, and a direction perpendicular to the plane including the first direction 2 and the second direction 4 is defined as a third direction 6.

[0049] The indexing module 10 transfers the substrate W from the container F containing the substrate W to the processing module 20 that processes the substrate W. The indexing module 10 accommodates the substrate W, which has already been fully processed in the processing module 20, into the container F. The longitudinal direction of the indexing module 10 is the second direction 4. The indexing module 10 includes a loading port 120 and an indexing frame 140.

[0050] A container F containing the substrate W is positioned on the loading port 120. Based on the index frame 140, the loading port 120 is located on the opposite side of the processing module 20. Multiple loading ports 120 can be provided, and these ports can be arranged in a line along the second direction 4. The number of loading ports 120 can be increased or decreased depending on factors such as the process efficiency and floor space requirements of the processing module 20.

[0051] Multiple slots (not shown) can be formed in container F to accommodate multiple substrates W arranged horizontally relative to the ground. Container F can be a front-opening unified pod (FOUP). Container F can be placed on loading port 120 by means of a conveying device (not shown) such as an overhead conveyor, overhead transport vehicle, or automated guided vehicle, or by an operator.

[0052] Index track 142 and indexing robot 144 are disposed inside index frame 140. Index track 142 is disposed inside index frame 140 such that the longitudinal direction is the second direction 4. Indexing robot 144 can transfer substrate W. Indexing robot 144 can transfer substrate W between index module 10 and buffer chamber 240, which will be described later. Indexing robot 144 may include index hand portion 1440. Substrate W can be placed on index hand portion 1440. Index hand portion 1440 may include index base portion 1442 having an annular shape and index support portion 1444, in which a portion of the circumference is symmetrically curved, the index support portion moving index base portion 1442. The configuration of index hand portion 1440 is the same as or similar to the configuration of transfer hand portion 2240, which will be described later. Index hand portion 1440 may be configured to be movable along the second direction 4 on index track 142. Therefore, the index hand 1440 is movable forward and backward along the index track 142. Furthermore, the index hand 1440 can be configured to be rotatable about a third direction 6 and movable along that third direction 6.

[0053] Processing module 20 can receive a substrate W housed in container F and perform coating and developing processes on the substrate W. Processing module 20 includes coating blocks 20a and developing blocks 20b. Coating blocks 20a perform the coating process on the substrate W. Developing blocks 20b perform the developing process on the substrate W. Multiple coating blocks 20a are provided and are arranged in a stacked configuration. Multiple developing blocks 20b are provided and are arranged in a stacked configuration. Figure 3In one embodiment, two coating blocks 20a and two developing blocks 20b are provided. The coating blocks 20a may be positioned below the developing blocks 20b. According to an embodiment, the two coating blocks 20a perform the same process and can be arranged with the same structure. Furthermore, the two developing blocks 20b can perform the same process on each other and can be arranged with the same structure.

[0054] Reference Figure 5 The coating block 20a includes a transfer chamber 220, a buffer chamber 240, a heat treatment chamber 260, and a process chamber 280 for performing liquid treatment.

[0055] The developing block 20b includes a transfer chamber 220, a buffer chamber 240, a heat treatment chamber 260, and a process chamber 280 for performing liquid processing. The transfer chamber 220 provides space for transferring the substrate W between the buffer chamber 240 and the heat treatment chamber 260, between the buffer chamber 240 and the process chamber 280, and between the heat treatment chamber 260 and the process chamber 280. The buffer chamber 240 provides space in which the substrate W loaded into and unloaded from the developing block 20b temporarily resides. The heat treatment chamber 260 performs a heat treatment process on the substrate W. The heat treatment process may include a cooling process and a heating process. The process chamber 280 performs a developing process by supplying developer to the substrate W to develop the substrate W.

[0056] The transfer chamber 220, buffer chamber 240, heat treatment chamber 260, and process chamber 280 of the coating block 20a are arranged in a structure and arrangement substantially similar to those of the developing block 20b. However, the heat treatment chamber 260 of the coating block 20a, which performs liquid processing, supplies liquid to the substrate W to form a liquid film. The liquid film may be a photoresist film or an antireflection film. Since the coating block 20a is arranged in a structure and arrangement substantially similar to that of the developing block 20b, a description of the coating block will be omitted. The developing block 20b will be described below.

[0057] The longitudinal direction of the transfer chamber 220 can be set in a first direction 2. The transfer chamber 220 is provided with a guide rail 222 and a transfer robot 224. The guide rail 222 is disposed in the transfer chamber 220 such that the longitudinal direction is the first direction 2. The transfer robot 224 can be configured to be linearly movable along the guide rail 222 in a second direction 2. The transfer robot 224 returns the substrate W between the buffer chamber 240 and the heat treatment chamber 260, between the buffer chamber 240 and the process chamber 280, and between the heat treatment chamber 260 and the process chamber 280.

[0058] According to an embodiment, the conveying robot 224 has a conveying hand 2240 on which the base plate W is placed. The conveying hand 2240 may be configured to be movable forward and backward, rotatable about a third direction 6, and movable along the third direction 6.

[0059] Figure 5 To show the provided Figure 4 A diagram of an embodiment of the conveying hand in the conveying chamber. (Refer to...) Figure 5 The conveying hand 2240 includes a base 2242 and support protrusions 2244. The base 2242 may have an annular ring shape in which the circumferential portion is curved. Alternatively, the base 2242 may have an annular shape in which the circumferential portion is symmetrically curved. The inner diameter of the base 2242 is larger than the diameter of the substrate W. The support protrusions 2244 extend inwardly from the base 2242. A plurality of support protrusions 2244 are provided, and the plurality of support protrusions support the edge region of the substrate W. According to an embodiment, four support protrusions 2244 may be provided at equal intervals.

[0060] Return to reference Figure 4 and Figure 5 Multiple buffer chambers 240 are provided. Some buffer chambers 240 are located between the index module 10 and the transfer chamber 220. Hereinafter, the aforementioned buffer chambers are referred to as front buffers 242. Multiple front buffers 242 are provided, and the multiple front buffers are stacked on top of each other in the vertical direction. Another part of the buffer chambers 240 is located between the transfer chamber 220 and the interface module 50. Hereinafter, the aforementioned buffer chambers are referred to as rear buffers 244. Multiple rear buffers 244 are provided, and the multiple rear buffers are stacked on top of each other in the vertical direction. Each of the front buffers 242 and the rear buffers 244 temporarily stores multiple substrates W. The substrates W stored in the front buffers 242 are loaded and unloaded by the index robot 144 and the transfer robot 224. The substrates W stored in the rear buffers 244 are loaded or unloaded by the transfer robot 224 and the first robot 5820, which will be described later.

[0061] Buffer manipulators 2420 and 2440 may be disposed on one side of the buffer chamber 240. Buffer manipulators 2420 and 2440 may include a front buffer manipulator 2420 and a rear buffer manipulator 2440. The front buffer manipulator 2420 may be disposed on one side of the front buffer zone 242. The rear buffer manipulator 2440 may be disposed on one side of the rear buffer zone 244. The invention is not limited thereto, and buffer manipulators 2420 and 2440 may be disposed on both sides of the buffer chamber 240.

[0062] A front buffer robot 2420 can transfer substrate W between front buffers 242. The front buffer robot 2420 may include a front buffer hand 2422. The front buffer hand 2422 can move vertically along a third direction 6. The front buffer hand 2422 can rotate. The front buffer hand 2422 can transfer substrate W. The front buffer hand 2422 can load or unload substrate W onto pin 2486, which is disposed on support plate 2482 described later. A rear buffer robot 2440 can transfer substrate W between rear buffers 244. The rear buffer robot 2440 may include a rear buffer hand 2442. The configuration of the rear buffer hand 2442 is the same as or similar to that of the front buffer hand 2422. Therefore, a description of the rear buffer hand 2442 will be omitted.

[0063] Figure 6 For illustrative purposes only Figure 4 A top plan view of an embodiment of a heat treatment chamber, and Figure 7 for Figure 6 A front view of the heat treatment chamber. (Reference) Figure 6 and Figure 7 Multiple heat treatment chambers 260 are provided. The heat treatment chambers 260 are arranged along a first direction 2. The heat treatment chambers 260 are located on one side of the transfer chamber 220. The heat treatment chambers 260 include a housing 2620, a cooling unit 2640, a heating unit 2660, and a transfer plate 2680.

[0064] The housing 2620 is configured in a generally cuboid shape. A space is provided within the housing 2620. An inlet (not shown) is formed on the side wall of the housing 2620, through which the substrate W enters and exits. The inlet can remain open. A door (not shown) can be configured to selectively open and close the inlet. A cooling unit 2640, a heating unit 2660, and a transfer plate 2680 are disposed within the internal space of the housing 2620. The cooling unit 2640 and the heating unit 2660 are arranged side-by-side along a second direction 4. According to an embodiment, the cooling unit 2640 may be located relatively closer to the transfer chamber 220 than the heating unit 2660. The cooling unit 2640 includes a cooling plate 2642. When viewed from above, the cooling plate 2642 may have a generally circular shape. The cooling plate 2642 is provided with a cooling member 2644. According to an embodiment, the cooling member 2644 is formed inside the cooling plate 2642 and can be configured as a flow path through which cooling fluid flows.

[0065] The heating unit 2660 includes a heating plate 2661, a heater 2663, a cover 2665, and a driver 2667. When viewed from above, the heating plate 2661 may have a generally circular shape. The heating plate 2661 has a diameter larger than that of the substrate W. The heater 2663 is mounted in the heating plate 2661. The heater 2663 may be configured as a heating resistor that applies current. The heating plate 2661 is provided with a lifting pin 2669 that is drivable in the vertical direction along a third direction 6. The lifting pin 2669 receives the substrate W from a conveying device outside the heating unit 2660 and places the received substrate W downwards onto the heating plate 2661, or lifts the substrate W from the heating plate 2661 and transfers the substrate W to the conveying device outside the heating unit 2660. According to an embodiment, three lifting pins 2669 may be provided. The cover 2665 has a space with an open lower portion. The cover 2665 is located above the heating plate 2661 and is moved up and down by the driver 2667. The space formed by the cover 2665 and the heating plate 2661 is configured as a heating space for heating the substrate W according to the movement of the cover 2665.

[0066] The conveyor plate 2680 is provided in a generally disk-like shape, and its diameter corresponds to the diameter of the substrate W. A notch 2682 is formed at the edge of the conveyor plate 2680. The notch 2682 is configured to correspond in number to the number of support protrusions 2244 formed on the conveyor hand 2240 of the conveyor robot 224, and is formed at positions corresponding to the positions of the support protrusions 2244. The substrate W is conveyed between the conveyor hand 2240 and the conveyor plate 2680 when the vertical positions of the conveyor hand 2240 and the conveyor plate 2680 change to a vertically aligned position. The conveyor plate 2680 is mounted on a guide rail 2692 and is movable along the guide rail 2692 between a first region 2696 and a second region 2698 via a driver 2694.

[0067] The conveyor plate 2680 is provided with a plurality of slit-shaped guide grooves 2684. The guide grooves 2684 extend from the end of the conveyor plate 2680 into the interior of the conveyor plate 2680. The longitudinal direction of the guide grooves 2684 is arranged in the second direction 4, and the guide grooves 2684 are positioned to be spaced apart from each other in the first direction 2. The guide grooves 2684 prevent the conveyor plate 2680 and the lifting pin 2669 from interfering with each other when the substrate W is conveyed between the conveyor plate 2680 and the heating unit 2660.

[0068] Cooling of the substrate W is performed when the transfer plate 2680, on which the substrate W is placed, is in contact with the cooling plate 2642. The transfer plate 2680 is made of a material with high thermal conductivity, thereby enabling efficient heat transfer between the cooling plate 2642 and the substrate W. According to an embodiment, the transfer plate 2680 may be made of metal.

[0069] Return to reference Figure 4 and Figure 5 Multiple process chambers 280 for performing liquid processing are provided. Some process chambers 280 may be arranged to be stacked on top of each other. The process chambers 280 are located on one side of the transfer chamber 220. The process chambers 280 are arranged side by side in the first direction 2.

[0070] Figure 8 For illustrative purposes only Figure 4 A diagram illustrating an exemplary embodiment of a process chamber for performing liquid handling. (Refer to...) Figure 8 The process chamber 280 includes a shell 2810, a processing container 2820, a support unit 2830, a lifting unit 2840, a liquid supply unit 2850, and an airflow supply unit 2860.

[0071] A space is provided within the housing 2810. The housing 2810 is configured in a generally rectangular parallelogram shape. An opening (not shown) may be formed on one side of the housing 2810. This opening can function as an inlet through which the substrate W is loaded into or unloaded from the internal space. Furthermore, to selectively close the inlet, a door (not shown) may be installed in the area adjacent to the inlet. In the event of a processing process being performed on the substrate W loaded into the internal space, the door can seal the internal space by blocking the inlet. A processing container 2820, a support unit 2830, a lifting unit 2840, and a liquid supply unit 2850 are disposed within the housing 2810.

[0072] The processing container 2820 may have a processing space with an open top. The processing container 2820 may be a bowl-shaped object with a processing space. The internal space may be configured to surround the processing space. The processing container 2820 may have a cup-shaped shape with an open top. The processing space of the processing container 2820 may be a space in the support unit 2830, which will be described later, for supporting and rotating the substrate W. The processing space may be a space in which the liquid supply unit 2850 supplies fluid to process the substrate W.

[0073] According to one embodiment, the processing container 2820 may include an inner cup 2822 and an outer cup 2824. The outer cup 2824 is configured to surround the circumference of the support unit 2830, and the inner cup 2822 may be located inside the outer cup 2824. When viewed from above, each of the inner cup 2822 and the outer cup 2824 may have an annular shape. The space between the inner cup 2822 and the outer cup 2824 can serve as a recovery path through which fluid introduced into the processing space is recovered.

[0074] When viewed from above, the internal cup-shaped member 2822 can be configured to be shaped around the support shaft 2834 of the support unit 2830, which will be described later. For example, when viewed from above, the internal cup-shaped member 2822 can be configured to be a circular plate shape around the support shaft 2834. When viewed from above, the internal cup-shaped member 2822 can be positioned to overlap with the discharge unit 3000 coupled to the housing 2810, which will be described later.

[0075] The inner cup 2822 may have an inner and an outer portion. The upper surfaces of the inner and outer portions may be configured to have different angles relative to each other based on a virtual horizontal line. For example, when viewed from above, the inner portion may be located overlapping with the body 2832 of the support unit 2830, which will be described later. The inner portion may be located opposite the support axis 2834. The inner portion may have an upper surface that slopes upwards as it moves away from the support axis 2834, and the outer portion may extend outwards from the inner portion. As the upper surface moves away from the support axis 2834, the outer portion may face a downwardly sloping direction. The upper end of the inner portion may coincide with the side end of the substrate W in the vertical direction. According to an embodiment, the point where the outer and inner portions intersect may be located lower than the upper end of the inner portion. The point where the inner and outer portions intersect each other may be circular. The outer portion may combine with the outer cup 2824 to form a recycling path through which the processing medium is recycled.

[0076] The outer cup 2824 can be configured to be in the shape of a cup surrounding the support unit 2830 and the inner cup 2822. The outer cup 2824 may include a bottom 2824a, a side portion 2824b, and an inclined portion 2824c.

[0077] The bottom layer 2824a may have a hollow circular plate shape. A recycling line 2870 may be connected to the bottom layer 2824a. The recycling line 2870 may recycle the processing medium supplied to the substrate W. The processing medium recovered by the recycling line 2870 may be reused by an external regeneration system (not shown).

[0078] Side portion 2824b may have an annular shape surrounding support unit 2830. Side portion 2824b may extend in a direction perpendicular to the side end of bottom portion 2824a. Side portion 2824b may extend upward from bottom portion 2824a.

[0079] The inclined portion 2824c may extend from the upper end of the side portion 2824b toward the central axis of the outer cup-shaped member 2824. The inner surface of the inclined portion 2824c may be configured to slope upwards to approach the support unit 2830. The inclined portion 2824c may be configured to have an annular shape. During the processing of the substrate W, the upper end of the inclined portion 2824c may be located at a higher position than the substrate W supported by the support unit 2830.

[0080] Support unit 2830 supports and rotates substrate W in the processing space. Support unit 2830 may be a chuck for supporting and rotating substrate W. Support unit 2830 may include body 2832, support shaft 2834, and drive unit 2836. Body 2832 may have an upper surface on which substrate W rests. When viewed from above, the upper surface of body 2832 is configured to be generally circular. The upper surface of body 2832 may be configured to have a diameter smaller than that of substrate W. Suction holes (not shown) are formed in body 2832 to clamp substrate W by vacuum suction. Optionally, an electrostatic plate (not shown) may be provided on body 2832 to clamp substrate W by electrostatic adsorption. Optionally, support pins for supporting substrate W are provided on body 2832 such that the support pins are in physical contact with substrate W to clamp substrate W.

[0081] Support shaft 2834 is coupled to body 2832. Support shaft 2834 can be coupled to the lower surface of body 2832. Support shaft 2834 can be configured such that its longitudinal direction faces the vertical direction. Support shaft 2834 is configured to rotate by receiving power from drive unit 2836. Support shaft 2834 rotates by the rotation of drive unit 2836, thereby rotating body 2832. Drive unit 2836 can change the rotational speed of support shaft 2834. Drive unit 2836 can be an electric motor providing driving force. However, the invention is not limited thereto, and the drive unit can be modified in various ways to provide driving force using known devices.

[0082] The lifting unit 2840 adjusts the relative height between the processing container 2820 and the support unit 2830. The lifting unit 2840 linearly moves the processing container 2820 along a third direction 6. The lifting unit 2840 may include an internal lifting member 2842 and an external lifting member 2844. The internal lifting member 2842 can move the internal cup-shaped object 2822 up and down. The external lifting member 2844 can move the external cup-shaped object 2824 up and down.

[0083] The liquid supply unit 2850 may include a liquid nozzle 2853, an arm 2855, a guide rail 2857, and a driver 2859.

[0084] Liquid nozzle 2853 can supply liquid to the substrate W supported by support unit 2830. The liquid supplied to the substrate W by liquid nozzle 2853 can be a developer. Furthermore, liquid nozzle 2853 can supply deionized water (DIW) to the substrate W supported by support unit 2830. Additionally, liquid nozzle 2853 can supply nitrogen gas (N2) to the substrate W supported by support unit 2830. Although in Figure 9The illustration shows a single liquid nozzle 2853, but the invention is not limited thereto, and multiple liquid nozzles 2853 may be provided.

[0085] Arm 2855 can support liquid nozzle 2853. Liquid nozzle 2853 can be mounted at one end of arm 2855. Liquid nozzle 2853 can be mounted on the lower surface of one end of arm 2855. When viewed from above, liquid nozzle 2853 can be arranged in a direction parallel to the longitudinal direction of guide rail 2857, which will be described later. The other end of arm 2855 can be coupled to actuator 2859.

[0086] Arm 2855 can be moved by actuator 2859. Therefore, the position of the liquid nozzle 2853 mounted on arm 2855 can be changed. The direction of movement of arm 2855 can be guided along guide rail 2857, on which actuator 2859 is mounted. Guide rail 2857 can be configured such that the longitudinal direction faces the horizontal direction. For example, guide rail 2857 can be configured such that the longitudinal direction faces a direction parallel to the first direction 2. Optionally, arm 2855 can be rotated by coupling to a rotating shaft whose longitudinal direction faces a third direction 6. The rotating shaft can be rotated by actuator. Therefore, the position of the liquid nozzle 2853 mounted on arm 2855 can be changed.

[0087] Airflow supply unit 2860 supplies airflow to the interior space of housing 2810. Airflow supply unit 2860 can supply downward airflow to the interior space. Airflow supply unit 2860 can supply temperature-controlled and / or humidity-controlled airflow to the interior space. Airflow supply unit 2860 can be installed in housing 2810. Airflow supply unit 2860 can be installed above processing container 2820 and support unit 2830. Airflow supply unit 2860 may include fan 2862, airflow supply line 2864, and filter 2866. Airflow supply line 2864 can supply temperature-controlled and / or humidity-controlled external airflow to the interior space. Filter 2866 can be installed in airflow supply line 2864. Filter 2866 can remove impurities contained in the external airflow flowing through airflow supply line 2864. When fan 2862 is driven, the external airflow supplied by airflow supply line 2864 can be evenly distributed to the interior space.

[0088] The discharge unit 3000 discharges the atmosphere from the processing space. The discharge unit 3000 may include an integrated discharge line 3200, a discharge line 3400, and a discharge valve 3600.

[0089] The integrated discharge line 3200 can be located outside the process chamber 280. A pressure reducing unit 5000 is installed within the integrated discharge line 3200. The pressure reducing unit 5000 provides negative pressure within the integrated discharge line 3200. Therefore, the integrated discharge line 3200 can discharge the atmosphere within the processing space through the pressure reducing unit 5000.

[0090] In the following text, upstream and downstream are defined based on the discharge direction within the integrated discharge line 3200. The discharge direction within the integrated discharge line 3200 is determined by the pressure reducing unit 5000. Therefore, the portion relatively close to the point where the pressure reducing unit 5000 is installed within the integrated discharge line 3200 is defined as downstream, and the portion relatively far from the point where the pressure reducing unit 5000 is installed within the integrated discharge line 3200 is defined as upstream.

[0091] The discharge line 3400 can be coupled to the processing container 2820. As an example, the discharge line 3400 can be coupled to the bottom 2824a of the outer cup 2824. When viewed from above, the discharge line 3400 can be positioned to overlap with the inner cup 2822. The discharge line 3400 connects the process chamber 280 and the integrated discharge line 3200. The internal atmosphere of the process chamber 280 is discharged to the integrated discharge line 3400 via the discharge line 3400.

[0092] Discharge valve 3600 can be installed in discharge line 3400. Discharge valve 3600 can open and close discharge line 3400. Optionally, discharge valve 3600 can regulate the discharge flow rate of discharge line 3400. Discharge valve 3600 can be configured as an on / off valve or a flow control valve. Discharge valve 3600 is not limited to these and can be configured as various known valves capable of regulating the discharge volume.

[0093] Figure 9 For illustrative purposes only Figure 8 A figure shows an exemplary embodiment of the discharge unit. Figure 10 for Figure 9 An enlarged perspective view of an exemplary embodiment of the partition wall. (Refer to...) Figure 9 and Figure 10 Multiple process chambers 280 can be provided. For example, process chamber 280 may include a first process chamber 280a and a second process chamber 280b.

[0094] The first process chamber 280a includes a first housing 2810a, a first processing container 2820a, a first support unit 2830a, a first lifting unit 2840a, and a first liquid supply unit 2850a. The second process chamber 280b includes a second housing 2810b, a second processing container 2820b, a second support unit 2830b, a second lifting unit 2840b, and a second liquid supply unit 2850b.

[0095] Housings 2820a and 2820b, support units 2830a and 2830b, lifting units 2840a and 2840b, and liquid supply units 2850a and 2850b Figure 10 The housing 2820, support unit 2830, lifting unit 2840, liquid supply unit 3850, and airflow supply unit 2860 of the exemplary embodiment are similarly arranged, so redundant descriptions of them will be omitted.

[0096] The discharge unit 3000 discharges the atmosphere from the treatment space. The discharge unit 3000 includes an integrated discharge line 3200, a first discharge line 3420, a second discharge line 3440, a first valve 3620, a second valve 3640, a partition wall 3800, a first regulator 3920a, and a second regulator 3940a.

[0097] The integrated discharge line 3200 can be located outside the first process chamber 280a and the second process chamber 280b. A pressure reducing unit 5000 is installed in the integrated discharge line 3200. The pressure reducing unit 5000 provides negative pressure in the integrated discharge line 3200. Therefore, the integrated discharge line 3200 discharges the atmosphere within the processing space through the pressure reducing unit.

[0098] The integrated drain line 3200 can have a generally quadrilateral cross-section. However, the invention is not limited to this, and the integrated drain line 3200 can have various cross-sections. For ease of description, the case where the integrated drain line 3200 has a quadrilateral cross-section will be described below as an example. The integrated drain line 3200 may include a first sidewall 3200a, a second sidewall 3200b, a third sidewall 3200c, and a fourth sidewall 3200d. The first drain line 3420 and the second drain line 3440, described later, are connected to the first sidewall. The first sidewall 3200a and the second sidewall 3200b are positioned facing each other, and the third sidewall 3200c and the fourth sidewall 3200d are positioned facing each other.

[0099] One end of the first discharge line 3420 can be coupled to the first processing container 2820a. The other end of the first discharge line 3420 is connected to the integrated discharge line 3200. The other end of the first discharge line 3420 can be connected to the first sidewall 3200a. Therefore, the first discharge line 3420 connects the first process chamber 280a and the integrated discharge line 3200. The first discharge line 3420 can connect the first process chamber 280a and the first connection point C1 of the integrated discharge line 3200. The internal atmosphere of the first process chamber 280a is discharged to the integrated discharge line 3400 through the first discharge line 3420.

[0100] One end of the second discharge line 3440 can be coupled to the second processing container 2820b. The other end of the second discharge line 3440 is connected to the integrated discharge line 3200. The other end of the second discharge line 3440 can also be connected to the first sidewall 3200a. Therefore, the second discharge line 3440 connects the second process chamber 280b and the integrated discharge line 3200. The second discharge line 3440 can connect the second process chamber 280b to the second connection point C2 of the integrated discharge line 3200. The internal atmosphere of the second process chamber 280b is discharged to the integrated discharge line 3400 through the second discharge line 3440.

[0101] The first discharge line 3420, the second discharge line 3440, and the pressure reducing unit 5000 can be sequentially arranged in the integrated discharge line 3200. The first discharge line 3420, the second discharge line 3440, and the pressure reducing unit 5000 can be arranged along the longitudinal direction of the integrated discharge line 3200. For example, the first discharge line 3420, the second discharge line 3440, and the pressure reducing unit 5000 can be sequentially arranged from upstream to downstream of the integrated discharge line 3200. For example, the first connection point C1, the second connection point C2, and the pressure reducing unit 5000 can be sequentially arranged from upstream to downstream of the integrated discharge line 3200.

[0102] A first valve 3620 may be installed in a first discharge line 3420. The first valve 3620 can open and close the first discharge line 3420. Optionally, the first valve 3620 can regulate the discharge flow rate of the first discharge line 3420. The first valve 3620 may be configured as an on / off valve or a flow control valve. The invention is not limited thereto, and the first valve 3620 may be configured as various known valves capable of regulating the discharge volume.

[0103] The second valve 3640 can be installed in the second discharge line 3440. The second valve 3640 can open and close the second discharge line 3440. Optionally, the second valve 3640 can regulate the discharge flow rate of the second discharge line 3440. The second valve 3640 can be configured as an on / off valve or a flow control valve. The invention is not limited thereto, and the second valve 3640 can be configured as various known valves capable of regulating the discharge volume.

[0104] A partition wall 3800 is disposed within the integrated discharge line 3200. The partition wall 3800 can divide a flow path through which airflow passes within the integrated discharge line 3200. The partition wall 3800 can divide a portion of the flow path through which airflow passes within the integrated discharge line 3200. For example, the partition wall 3800 can be configured to extend up to an upstream point in the integrated discharge line 3200, rather than at the point in the integrated discharge line 3200 where the pressure reducing unit 5000 is installed.

[0105] The partition wall 3800 can divide the flow path in the integrated discharge line 3200 into a first flow path 3920 and a second flow path 3940. The first flow path 3920 can be configured to be the flow path through which the airflow discharged through the first discharge line 3420 flows. The second flow path 3940 can be configured to be the flow path through which the airflow discharged through the second discharge line 3440 flows. For example, the first flow path 3920 and the second flow path 3940 can be configured up to an upstream point of the integrated discharge line 3200, rather than the point in the integrated discharge line 3200 where the pressure reducing unit 5000 is installed.

[0106] The partition wall 3800 can extend from one end to the other. One end of the partition wall 3800 can be located between the first discharge line 3420 and the second discharge line 3440. One end of the partition wall 3800 contacts the first sidewall 3200a. One end of the partition wall 3800 can be located between the first connection point C1 and the second connection point C2. One end of the partition wall 3800 can be located closer to the second point P2 between the first point P1 and the second point P2. In the portion where the first discharge line 3420 and the first sidewall 3200a connect, the first point P1 is adjacent to the second discharge line 3440. In the portion where the second discharge line 3440 and the first sidewall 3200a connect, the second point is adjacent to the first discharge line 3420. One end of the partition wall 3800 can be located upstream of the integrated discharge line 3200, above the second point P2.

[0107] The other end of the partition wall 3800 can be located between the first side wall 3200a and the second side wall 3200b. For example, the other end of the partition wall 3800 can be located at the midpoint between the first side wall 3200a and the second side wall 3200b.

[0108] The partition wall 3800 may include a first portion 3820 and a second portion 3840. The first portion 3820 extends from one end of the partition wall 3800 that contacts the first sidewall 3200a. The first portion 3820 may extend downward in a direction from upstream to downstream of the integrated discharge line 3200. For example, the first portion 3820 may extend from one end of the partition wall 3800 to the midpoint between the first sidewall 3200a and the second sidewall 3200b.

[0109] The second section 3840 can extend from the first section 3820 to the other end of the partition wall 3800. The longitudinal direction of the second section 3840 can be arranged along the discharge direction of the integrated discharge line 3200. The second section 3840 can extend from upstream to downstream of the integrated discharge line 3200.

[0110] In the above embodiments, as an example, it has been described that the first portion 3820 is inclined, but the invention is not limited thereto. The first portion 3820 may extend from one end to the second portion 3840 and may be circular to have curvature in the direction from the first sidewall 3200a to the second sidewall 3200b.

[0111] The first regulator 3920a can be installed in the first flow path 3920. The first regulator 3920a can be installed downstream of the first flow path 3920. The first regulator 3920a can regulate the flow rate of the airflow discharged from the first flow path 3920. The second regulator 3940a can be installed in the second flow path 3940. The second regulator 3940a can be installed downstream of the second flow path 3940. The second regulator 3940a can regulate the flow rate of the airflow discharged from the second flow path 3940. The flow rates of the airflow discharged through the first flow path 3920 and the airflow discharged through the second flow path 3940 can be adjusted independently. Therefore, the internal atmosphere of the first process chamber 280a and the second process chamber 280b can be discharged independently.

[0112] Figure 11 For illustrative purposes only Figure 9 A diagram showing the airflow in the exhaust unit. (Refer to...) Figure 11 The first discharge pipeline 3420, the second discharge pipeline 3440, and the pressure reducing unit 5000 are arranged sequentially from upstream to downstream of the integrated discharge pipeline 3200. The pressure reducing unit 5000, installed in the integrated discharge pipeline 3200, is positioned in one direction for smooth discharge. Inside the integrated discharge pipeline 3200, the airflow travels in one direction. That is, the airflow within the integrated discharge pipeline 3200 flows from upstream to downstream.

[0113] The internal atmosphere of the first process chamber 280a flows to the integrated discharge line 3200 through the first discharge line 3420. The internal atmosphere of the first process chamber 280a flows from upstream to downstream of the integrated discharge line 3200. The internal atmosphere of the second process chamber 280b flows to the integrated discharge line 3200 through the second discharge line 3440. The internal atmosphere of the second process chamber 280b flows from upstream to downstream of the integrated discharge line 3200.

[0114] Therefore, the discharge from the second discharge line 3440 to the integrated discharge line 3200 is interrupted by the airflow discharged from the first process chamber 280a in the integrated discharge line 3200. The flow of air in the integrated discharge line 3200 introduced from the first discharge line 3420 collides with the flow of air in the integrated discharge line 3200 introduced from the second discharge line 3440, causing vortices to be generated near the second connection point C2. For this reason, it is relatively more difficult to discharge the internal atmosphere of the second process chamber 280b through the second discharge line 3440 compared to the internal atmosphere of the first process chamber 280a. The internal pressure of the second process chamber 280b connected to the second discharge line 3440 changes. The internal atmosphere of the second process chamber 280b cannot be discharged smoothly.

[0115] According to an exemplary embodiment of the present invention, the integrated discharge line 3200 is divided into a first flow path 3920 and a second flow path 3940 by a partition wall 3800. Since the partition wall 3800 is disposed inside the integrated discharge line 3200, the flow of airflow discharged from each of the process chambers 280a and 280b can be guided independently. Therefore, the interference of the flow of airflow discharged from the first process chamber 280a on the internal atmosphere discharged from the second process chamber 280b via the second discharge line 3440 can be minimized. With smooth discharge, pressure variations caused by adjacent process chambers in each of the first and second process chambers 280a and 280b can be minimized. Therefore, the developing process can be efficiently performed in each of the first and second process chambers 280a and 280b. Furthermore, the first portion 3820 is inclined, allowing for smooth flow of airflow in the integrated discharge line 3200.

[0116] The first discharge line 3420, the second discharge line 3440, and the pressure reducing unit 5000 are sequentially arranged upstream to downstream of the integrated discharge line 3200, causing the discharge from the first discharge line 3420, located relatively far from the pressure reducing unit 5000, to be less smooth. Compared to the second process chamber 280b, the first process chamber 280a is relatively more difficult to discharge its internal atmosphere smoothly. Therefore, by individually adjusting the discharge flow rates of the first regulator 3920a installed in the first flow path 3920 and the second regulator 3940a installed in the second flow path 3940, the discharge efficiency of each process chamber 280 can be increased as needed.

[0117] In the above exemplary embodiments, as an example, the case where the process chamber 280 is configured as a first process chamber 280a and a second process chamber 280b has been described. However, the present invention is not limited thereto, and multiple process chambers 280 may be configured. For example, the process chambers 280 may include a first process chamber 280a, a second process chamber 280b, and a third process chamber 280c. When the first process chamber 280a, the second process chamber 280b, the third process chamber 280c, and the pressure reducing unit 5000 are arranged sequentially, the partition wall 3800 may be installed near the portion connected to the discharge pipeline of the second process chamber 280b in the integrated discharge pipeline 3200, and near the portion connected to the discharge pipeline of the third process chamber 280c in the integrated discharge pipeline 3200.

[0118] The foregoing detailed description illustrates the present invention. Furthermore, the foregoing has shown and described exemplary embodiments of the invention, and the invention can be used in various other combinations, modifications, and environments. That is, changes or modifications are possible within the scope of the concept of the invention disclosed herein, within the scope of its equivalents in the written disclosure, and / or within the scope of the skill or knowledge in the art. The foregoing exemplary embodiments describe the optimal state for carrying out the technical spirit of the invention, and various changes are possible in specific fields and uses of the invention. Therefore, the foregoing detailed description of the invention is not intended to limit the invention to the disclosed exemplary embodiments. Furthermore, the appended claims should be interpreted to equally include other exemplary embodiments.

Claims

1. A substrate processing apparatus, the substrate processing apparatus comprising: A first process chamber, having a first processing space within the first process chamber; The second process chamber has a second processing space. as well as The discharge unit discharges the atmosphere from the first processing space and the second processing space. The discharge unit includes: Integrated discharge pipeline; A first discharge line is connected to the first process chamber and the integrated discharge line; A second discharge line, the second discharge line connecting the second process chamber and the integrated discharge line; and A partition wall divides a portion of the flow path within the integrated discharge pipeline into a first flow path and a second flow path. Fluid discharged through the first discharge pipeline flows through the first flow path, and fluid discharged through the second discharge pipeline flows through the second flow path. Wherein, between the first discharge pipeline and the second discharge pipeline, one end of the partition wall contacts the first sidewall of the inner wall of the integrated discharge pipeline, and The other end of the partition wall is located between the first sidewall and the second sidewall facing the first sidewall.

2. The substrate processing apparatus according to claim 1, wherein, The partition wall is configured to separate the first flow path and the second flow path by a predetermined distance along the longitudinal direction of the integrated discharge pipeline.

3. The substrate processing apparatus according to claim 2, wherein, The pressure reducing unit is installed in the integrated discharge pipeline, and The first discharge pipeline, the second discharge pipeline, and the pressure reducing unit are arranged sequentially along the longitudinal direction of the integrated discharge pipeline.

4. The substrate processing apparatus according to claim 3, wherein, The discharge unit further includes: A first regulator regulates the discharge flow rate of the first flow path; and The second regulator adjusts the discharge flow rate of the second flow path.

5. The substrate processing apparatus according to claim 1, wherein, Each of the first discharge line and the second discharge line is connected to the first sidewall, and Between the first point and the second point, one end of the partition wall is located closer to the second point. At the point where the first discharge line and the first sidewall connect, the first point is adjacent to the second discharge line. At the point where the second discharge line and the first sidewall connect, the second point is adjacent to the first discharge line.

6. The substrate processing apparatus according to claim 5, wherein, The partition wall includes: A first portion, the first portion extending from one end of the partition wall; and The second part extends from the first part to the other end of the partition wall, and The first portion is configured to slope downwards in the direction from upstream to downstream of the integrated discharge pipeline, and The second portion extends from the first portion in a direction toward the downstream of the integrated discharge pipe.

7. The substrate processing apparatus according to claim 6, wherein, The first portion extends from one end of the partition wall to the midpoint between the first sidewall and the second sidewall.

8. The substrate processing apparatus according to any one of claims 1 to 4, wherein, Each of the first process chamber and the second process chamber performs a development process on the substrate.

9. A substrate processing apparatus, the substrate processing apparatus comprising: A first process chamber, the first process chamber having a first processing space; A second process chamber, the second process chamber having a second processing space; A transfer robot arm that transfers the substrate to the first process chamber or the second process chamber; as well as The discharge unit discharges the atmosphere from the first processing space and the second processing space. The first process chamber includes: A first processing container, the first processing container providing the first processing space; A first support unit supports and rotates the substrate in the first processing space; A first developer supply unit supplies developer to the substrate, and The second process chamber includes: A second processing container, the second processing container providing the second processing space; The second support unit supports and rotates the substrate in the second processing space; The second developer supply unit supplies developer to the substrate, and The discharge unit includes: Integrated discharge pipeline; A first discharge line is connected to the first process chamber and the integrated discharge line; A second discharge line, the second discharge line connecting the second process chamber and the integrated discharge line; and A partition wall separates a first flow path and a second flow path in the integrated discharge pipeline along the longitudinal direction of the integrated discharge pipeline by a predetermined distance. Fluid discharged through the first discharge pipeline flows through the first flow path, and fluid discharged through the second discharge pipeline flows through the second flow path. Wherein, between the first discharge pipeline and the second discharge pipeline, one end of the partition wall contacts the first sidewall of the inner wall of the integrated discharge pipeline, and The other end of the partition wall is located between the first sidewall and the second sidewall facing the first sidewall.

10. The substrate processing apparatus according to claim 9, wherein, A pressure-reducing unit is installed in the integrated discharge pipeline, and the pressure-reducing unit provides negative pressure to the integrated discharge pipeline. The first discharge pipeline, the second discharge pipeline, and the pressure reducing unit are arranged sequentially along the longitudinal direction of the integrated discharge pipeline.

11. The substrate processing apparatus according to claim 10, wherein, The discharge unit further includes: A first regulator, which regulates the discharge flow rate of the first flow path; and The second regulator adjusts the discharge flow rate of the second flow path.

12. The substrate processing apparatus according to claim 9, wherein, Each of the first discharge line and the second discharge line is connected to the first sidewall, and Between the first point and the second point, one end of the partition wall is located closer to the second point. At the point where the first discharge line and the first sidewall connect, the first point is adjacent to the second discharge line. At the point where the second discharge line and the first sidewall connect, the second point is adjacent to the first discharge line.

13. The substrate processing apparatus according to claim 12, wherein, The partition wall includes: A first portion, the first portion extending from one end of the partition wall; and The second part extends from the first part to the other end of the partition wall, and The first portion is configured to slope downwards in the direction from upstream to downstream of the integrated discharge pipeline, and The second portion extends from the first portion in a direction toward the downstream of the integrated discharge pipe.

14. The substrate processing apparatus according to claim 13, wherein, The first portion extends from one end of the partition wall to the midpoint between the first sidewall and the second sidewall.

15. The substrate processing apparatus according to any one of claims 9 to 11, wherein, The discharge unit further includes: A first valve, which opens and closes the first discharge line or regulates the discharge flow rate; and The second valve opens and closes the second discharge line or regulates the discharge flow rate.

16. A substrate processing apparatus, the substrate processing apparatus comprising: A first process chamber, having a first processing space within the first process chamber; The second process chamber has a second processing space. as well as The discharge unit discharges the atmosphere from the first processing space and the second processing space. The discharge unit includes: Integrated discharge pipeline; A first discharge line is connected to the first process chamber and the integrated discharge line; A second discharge line, the second discharge line connecting the second process chamber and the integrated discharge line; and A partition wall, said partition wall preventing discharge interference between the first process chamber and the second process chamber, and A pressure reducing unit is installed in the integrated discharge pipeline, and The first discharge pipeline, the second discharge pipeline, and the pressure reducing unit are arranged sequentially along the longitudinal direction of the integrated discharge pipeline. A first flow path and a second flow path are provided in the integrated discharge pipeline. Fluid discharged through the first discharge pipeline flows through the first flow path, and fluid discharged through the second discharge pipeline flows through the second flow path. The partition wall separates the first flow path and the second flow path at a predetermined distance along the longitudinal direction of the integrated discharge pipeline; Wherein, between the first discharge pipeline and the second discharge pipeline, one end of the partition wall contacts the first sidewall of the inner wall of the integrated discharge pipeline, and The other end of the partition wall is located between the first sidewall and the second sidewall facing the first sidewall.

17. The substrate processing apparatus according to claim 16, wherein, The discharge unit further includes: A first regulator regulates the discharge flow rate of the first flow path; and The second regulator adjusts the discharge flow rate of the second flow path.

18. The substrate processing apparatus according to claim 17, wherein, Each of the first discharge line and the second discharge line is connected to a first sidewall of the inner wall of the integrated discharge line, and The partition wall includes: The first portion extends from the end that contacts the first sidewall, between the first discharge line and the second discharge line; and The second part extends from the first part to the other end, and The first portion is configured to slope downwards in the direction from upstream to downstream of the integrated discharge pipeline, and The second portion extends in a direction toward the downstream of the integrated discharge line.

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