Gas heating device, semiconductor manufacturing device, heating element and semiconductor manufacturing method

Abstract

The present invention relates to a gas heating device, a semiconductor manufacturing device, a heating element, and a semiconductor manufacturing method, and aims to provide a technology capable of improving the response when heating or cooling a gas. The gas heating device (11a) comprises: a flat heating element (51); a heat-resistant container (54) having a flat space (54i) inside, wherein the heating element (51) is arranged in the space (54i) with a gap between the heating element (51); a gas introduction joint (55) connected to the heat-resistant container (54) to introduce gas into the space (54i); a gas outlet joint (56) connected to the heat-resistant container (54) to outlet the gas flowing through the space (54i) to the outside; and an induction coil (57) arranged on the lower surface of the heat-resistant container (54) along the heating element (51) to induction heat the heating element (51) based on the supplied power.

Description

Technical Field

[0001] The present invention relates to a gas heating device, a semiconductor manufacturing device, a heating element and a semiconductor manufacturing method. Background Art

[0002] In the semiconductor manufacturing process, after a pattern of an organic material is formed by photolithography using a resist, a dry etching method is used to etch oxide films and metal materials by applying high-frequency output to several gases to give energy.

[0003] Then, in order to remove the resist, a method of dissolving it using a chemical solution is performed. In conventional semiconductor manufacturing equipment, the chemical solution is uniformly distributed on the processing surface of the semiconductor wafer by rotating the semiconductor wafer at a predetermined rotation speed and scanning the chemical solution nozzle at a predetermined speed while spraying the chemical solution at a predetermined flow rate. In order to ensure sufficient in-plane uniformity during the chemical solution treatment, it is necessary to supply a gas heated to a predetermined temperature to the semiconductor wafer.

[0004] As a method of heating gas to a predetermined temperature, a gas heating device is sometimes used. For example, in the technology described in Patent Document 1, a plurality of flat-plate-shaped heating elements of different sizes are arranged in an overlapping manner in a cylindrical heating container, and an induction magnetic field is generated by an induction coil wound along the cylindrical shape to heat the plurality of flat-plate-shaped heating elements.

[0005] Patent Document 1: Japanese Patent Application Publication No. 2000-48943

[0006] In the technology described in Patent Document 1, the density of the magnetic field lines of the induced magnetic field generated by the wound induction coil becomes stronger and more curved as it approaches the induction coil, so it is difficult to make a plurality of heating elements arranged in an overlapping manner have the same temperature. In addition, since a plurality of flat heating elements are arranged in an overlapping manner in a cylindrical heating container, the area where the gas flows becomes larger at a position away from the heating element, such as a curved surface portion of the heating container. Therefore, it is difficult to efficiently heat or cool the gas.

[0007] Thus, in the technology described in Patent Document 1, in order to stably obtain gas at a desired temperature, it is necessary to increase the heat capacity of the heating element or increase the area of ​​the heating element, which causes a problem in that the response when heating or cooling the gas deteriorates. Summary of the invention

[0008] Therefore, the present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a technology capable of improving the response when heating or cooling a gas.

[0009] The gas heating device involved in the present invention comprises: a flat heating element; a heat-resistant container having a flat space inside, wherein the heating element is arranged in the space with a gap provided between the heating element and the heating element; a gas inlet joint connected to the heat-resistant container for introducing gas into the space; a gas outlet joint connected to the heat-resistant container for outlet the gas flowing through the space to the outside; and an induction coil arranged on the lower surface of the heat-resistant container along the heating element for induction heating the heating element based on the supplied power.

[0010] Effects of the Invention

[0011] According to the present invention, the induction coil is arranged along the heating element on the lower surface of the heat-resistant container, so that the magnetic flux distribution of the induction coil becomes uniform and optimized, thereby making it possible to make the temperature of the heating element uniform during heating or cooling.

[0012] Furthermore, the flat heating element is arranged in a space having the same flat shape as the heating element so that a gap is provided, and thus the gap around the heating element becomes uniform. Thus, the gas flowing through the space in the heat-resistant container can be uniformly heated or cooled. In summary, the gas of the desired temperature can be stably obtained without increasing the heat capacity of the heating element or increasing the area of ​​the heating element, and thus the response when heating or cooling the gas can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 It is a cross-sectional view of the gas heating portion of the gas heating device according to Embodiment 1.

[0014] Figure 2 It is a schematic plan view showing an example of a heat generating element.

[0015] Figure 3 It is a schematic plan view showing another example of the heat generating element.

[0016] Figure 4 It is a schematic plan view showing an example of a rectifying plate.

[0017] Figure 5 This is a cross-sectional view showing a chemical solution process in a processing chamber of the semiconductor manufacturing apparatus according to the first embodiment.

[0018] Figure 6 This is a schematic diagram showing the control function of the processing chamber of the semiconductor manufacturing apparatus according to the first embodiment.

[0019] Figure 7 This is a cross-sectional view showing a water washing process in a processing chamber of the semiconductor manufacturing apparatus according to the first embodiment.

[0020] Figure 8 This is a cross-sectional view showing a drying process in a processing chamber of the semiconductor manufacturing apparatus according to the first embodiment.

[0021] Fig. 9 This is a flowchart showing the process steps performed by the semiconductor manufacturing apparatus according to the first embodiment.

[0022] Fig.10 This is a cross-sectional view showing a chemical solution process in a processing chamber of a semiconductor manufacturing apparatus according to a second embodiment.

[0023] Fig.11 This is a cross-sectional view showing a chemical solution process in a processing chamber of a semiconductor manufacturing apparatus according to a third embodiment. DETAILED DESCRIPTION

[0024] <Implementation method 1>

[0025] Hereinafter, Embodiment 1 will be described using the drawings. Figure 1 The gas heating device 11a according to the first embodiment (see Figure 5 ) is a cross-sectional view of the gas heating portion 50.

[0026] like Figure 1 As shown, the gas heating device 11a (refer to Figure 5 ) has a flat heating element 51, a flat induction plate 52, a rectifying plate 53, a heat-resistant container 54, a gas inlet connector 55, a gas outlet connector 56, an induction coil 57 and a power supply 58.

[0027] The heat-resistant container 54 has a heat-resistant container induction plate holder 54a, a heat-resistant container rectifier plate holder 54b, and a heat-resistant container base 54c. The heat-resistant container induction plate holder 54a is formed in a circular ring shape, for example, when viewed from above. An annular groove 54e is formed along the inner edge of the upper surface of the heat-resistant container induction plate holder 54a, and the outer edge of the induction plate 52 is accommodated in the annular groove 54e. The heat-resistant container rectifier plate holder 54b is formed in a circular ring shape, for example, when viewed from above, and is arranged on the upper surface of the heat-resistant container induction plate holder 54a. The inner edge of the lower surface of the heat-resistant container rectifier plate holder 54b contacts the outer edge of the upper surface of the induction plate 52, and the induction plate 52 is held by the heat-resistant container rectifier plate holder 54b and the heat-resistant container induction plate holder 54a.

[0028] An annular groove 54f is formed along the inner edge of the upper surface of the heat-resistant container rectifying plate holding part 54b, and the outer edge of the rectifying plate portion 53a constituting a part of the rectifying plate 53 is accommodated in the annular groove 54f. A heat-resistant container base 54c is arranged on the upper surface of the heat-resistant container rectifying plate holding part 54b. An opening 54g is formed on the inner peripheral side of the heat-resistant container rectifying plate holding part 54b and the heat-resistant container induction plate holding part 54a than the inner edge. A recessed portion 54h that is recessed upward is formed at a position opposite to the opening 54g on the lower surface of the heat-resistant container base 54c. The peripheral edge of the recessed portion 54h on the lower surface of the heat-resistant container base 54c contacts the outer edge of the upper surface of the rectifying plate portion 53a, and the rectifying plate portion 53a is held by the heat-resistant container base 54c and the heat-resistant container rectifying plate holding part 54b. Moreover, a bulging portion 54d bulging upward is formed in the center portion of the upper surface of the heat-resistant container base 54c.

[0029] A flat-plate-shaped space 54i is formed between the rectifying plate portion 53a and the induction plate 52 inside the heat-resistant container 54, and the heating element 51 is arranged in the space 54i with a gap therebetween.

[0030] The rectifying plate 53 includes a rectifying plate portion 53a and a rectifying plate duct portion 53b. The rectifying plate duct portion 53b is vertically provided at the center of the rectifying plate portion 53a and protrudes from the upper end of the bulged portion 54d. The gas outlet joint 56 is connected to the inside of the rectifying plate duct portion 53b.

[0031] The gas introduction joint 55 is connected to the inside of the bulged portion 54d via the conduit portion 55a. The gas introduced from the gas introduction joint 55 flows from the conduit portion 55a through the gap between the bulged portion 54d and the rectifying plate conduit portion 53b, the gap between the recessed portion 54h and the rectifying plate portion 53a, and the gas dispersion holes 53c (see Figure 4 ), the gap between the space 54i and the heating element 51, and the gas outlet 51a1 (refer to Figure 2 ) and the rectifying plate duct portion 53b and is led out from the gas outlet joint 56. Here, Figure 1 In FIG. 5 , the flow of gas is shown as airflows 60 a , 60 b , 60 c , 60 d , 60 e , and 60 f . The gap between the heating element 51 and the induction plate 52 and the gap between the heating element 51 and the rectifying plate 53 are referred to as the gap between the heating element 51 and the induction plate 52 .

[0032] The induction coil 57 is arranged along the heating element 51 on the lower surface of the heat-resistant container 54. Specifically, the induction coil 57 is arranged along the heating element 51 on the lower surface of the induction plate 52 held by the heat-resistant container induction plate holding portion 54a. When appropriate power is supplied to the induction coil 57 from the power supply 58, an appropriate induced current is generated in the heating element 51, and the heating element 51 is inductively heated. The inductively heated heating element 51 heats the gas between the airflow 60e.

[0033] The induction plate 52 is made of non-metallic materials such as quartz glass so as not to block the induced magnetic field. The rectifying plate portion 53a of the rectifying plate 53 is made of a metal material such as aluminum with good thermal conductivity so that the radiant heat from the heating element 51 is efficiently transferred to the gas between the airflows 60c, 60d, and 60e. The rectifying plate duct portion 53b of the rectifying plate 53 is also made of a metal material in order to heat by thermal conduction. In addition, the heat-resistant container induction plate holding portion 54a, the heat-resistant container rectifying plate holding portion 54b, and the heat-resistant container base 54c constituting the heat-resistant container 54 are made of a metal material in order to ensure pressure resistance.

[0034] The gap between the heating element 51 and the induction plate 52 and the gap between the heating element 51 and the rectifying plate 53 are set as narrow as possible within a range that can ensure the airflow and can heat the gas without omission, thereby improving the response when heating or cooling the gas.

[0035] Next, the details of the heat generating element 51 will be described. Figure 2 It is a schematic plan view showing an example of the heating element 51 . Figure 3 It is a schematic plan view showing another example of the heating element 51 . Figure 2 and Figure 3 This is an example in which the shape of the heating element 51 is redesigned so that the gas can be efficiently stirred near the flat heating element 51 .

[0036] like Figure 2 As shown, the heating element 51 is a porous heating element, having a circular plate portion 51a, a gas outlet 51a1 and a large number of through holes 51a2. The circular plate portion 51a has a main surface, i.e., an upper surface, and another main surface, i.e., a lower surface, opposite to the upper surface. A gas outlet 51a1 is provided in the central portion of the circular plate portion 51a, which extends from the upper surface through the lower surface, and a large number of through holes 51a2 are provided in the portion other than the peripheral portion and the central portion of the circular plate portion 51a, which extends from the upper surface through the lower surface.

[0037] In addition, if Figure 3As shown, the heating element 51 is a concavo-convex heating element, having a circular plate portion 51b, a gas outlet 51b1 and a large number of concavo-convexities. The circular plate portion 51b has a main surface, i.e., an upper surface, and another main surface, i.e., a lower surface, opposite to the upper surface. A gas outlet 51b1 is provided in the central portion of the circular plate portion 51b, which extends from the upper surface to the lower surface, and a large number of concavo-convexities are provided on the upper surface and the lower surface of the circular plate portion 51b except for the peripheral portion and the central portion. Specifically, on the upper surface of the circular plate portion 51b, the concavo-convexities are composed of the upper surface of the circular plate portion 51b and the convex portion 51b2 protruding upward from the upper surface of the circular plate portion 51b, and on the lower surface of the circular plate portion 51b, the concavo-convexities are composed of the lower surface of the circular plate portion 51b and the convex portion 51b2 protruding downward from the lower surface of the circular plate portion 51b.

[0038] exist Figure 2 In the example shown, Figure 1 Between the airflow 60e shown, the gases flowing on the upper and lower surfaces of the flat heating element 51 flow through the through holes 51a2 and interfere with each other, generating turbulence, which can stir the nearby gases and achieve further temperature uniformity. Figure 3 In the example shown, Figure 1 Between the airflow 60e shown, the gas flowing through the upper and lower surfaces of the flat heating element 51 flows through a large number of projections and depressions to generate turbulence on each of the upper and lower surfaces, thereby stirring the nearby gas and achieving further uniform temperature.

[0039] Next, the details of the rectifying plate 53 will be described. Figure 4 It is a schematic plan view showing an example of the rectifying plate 53 .

[0040] like Figure 4 As shown, the rectifying plate 53 has a plurality of gas dispersion holes 53c in addition to the rectifying plate portion 53a and the rectifying plate duct portion 53b. The plurality of gas dispersion holes 53c are arranged around the circumference of the rectifying plate portion 53a and penetrate from the upper surface to the lower surface of the rectifying plate portion 53a. Figure 1 The airflow 60c flowing on the upper surface of the rectifying plate 53 shown in the figure flows through the gas dispersion holes 53c to become the airflow 60d, and further flows from the end of the heating element 51 through the upper and lower surfaces to become the airflow 60e toward the center.

[0041] Next, the semiconductor manufacturing apparatus according to the first embodiment will be described. Figure 5 This is a cross-sectional view showing a chemical solution process in a processing chamber of the semiconductor manufacturing apparatus according to the first embodiment.

[0042] like Figure 5As shown, the semiconductor manufacturing device has a workbench rotating mechanism 2, a chuck switching mechanism 3, a platform 4, a cup body up and down mechanism 5, a liquid medicine nozzle 6, a liquid medicine nozzle scanning mechanism 7, a water nozzle 8, a liquid medicine temperature control circulation spraying mechanism 9, a first gas-liquid separator 10a and a lower surface gas temperature control spraying mechanism 11.

[0043] The table rotating mechanism 2 includes a table rotating motor 2a, a chuck table 2b, and a lower surface gas nozzle 2c whose ejection port is located at the center of the semiconductor wafer 1. The chuck table 2b clamps the semiconductor wafer 1 by its end. The table rotating motor 2a rotates the chuck table 2b. The lower surface gas nozzle 2c supplies gas to the opposite side of the processing surface of the semiconductor wafer 1.

[0044] The chuck opening and closing mechanism 3 includes a chuck pin base 3a, a chuck pin 3b, and a support pin 3c. The cup body up-and-down mechanism 5 includes a first cup body 5a, a second cup body 5b, a cover 5c, and a cup body base 5d.

[0045] The chemical liquid nozzle 6 sprays the chemical liquid 14a onto the processing surface of the semiconductor wafer 1. The chemical liquid nozzle scanning mechanism 7 includes a scanning motor 7a, a scanning axis 7b, and a scanning arm 7c, and the chemical liquid nozzle scanning mechanism 7 causes the chemical liquid nozzle 6 to scan the processing surface of the semiconductor wafer 1. The chemical liquid temperature regulating circulation spraying mechanism 9 includes a chemical liquid circulation tank 9a, a first stock liquid tank 9b, a second stock liquid tank 9c, a chemical liquid circulation pump 9d, and a chemical liquid temperature regulator 9e.

[0046] The lower surface gas temperature control ejection mechanism 11 has a gas heating device 11a and an on-off valve 11b. The on-off valve 11b is arranged at the inlet side of the gas heating device 11a. The gas discharged from the gas heating device 11a is supplied to the lower surface gas nozzle 2c. The lower surface gas nozzle 2c is a nozzle that supplies the gas discharged from the gas heating device 11a to the semiconductor wafer 1 when the processing surface of the semiconductor wafer 1 is processed. Here, the processing of the processing surface of the semiconductor wafer 1 related to the lower surface gas nozzle 2c refers to the liquid treatment, water washing treatment and drying treatment performed in the processing chamber.

[0047] The temperature of the gas extracted from the gas heating device 11a is controlled by controlling the power supplied to the induction coil 57 of the gas heating device 11a. Specifically, the gas heating device 11a is controlled in such a manner that the gas is heated or cooled to a temperature set in a process step corresponding to the treatment of the treatment surface of the semiconductor wafer 1 based on the power supplied to the induction coil 57.

[0048] When power is supplied to the induction coil 57, the on-off valve 11b is opened, so that the normal temperature gas 16 is temperature-controlled by the gas heating device 11a to become the temperature-controlled gas 17, and the temperature-controlled gas 17 is supplied to the lower surface gas nozzle 2c. On the other hand, when power is not supplied to the induction coil 57, the on-off valve 11b is opened, so that although the normal temperature gas 16 flows through the gas heating device 11a, it is not temperature-controlled by the gas heating device 11a, and is supplied to the lower surface gas nozzle 2c while maintaining the state of the normal temperature gas 16.

[0049] The processing surface of the semiconductor wafer 1 is the upper surface of the semiconductor wafer 1 . The opposite side of the processing surface of the semiconductor wafer 1 is the surface of the semiconductor wafer 1 opposite to the processing surface, specifically, the lower surface of the semiconductor wafer 1 .

[0050] Figure 6 1 is a schematic diagram showing the control function of the processing chamber of the semiconductor manufacturing apparatus according to the first embodiment. Figure 6 As shown, the operation PC 101 is composed of a MM-IF (man machine interface) 101a such as a touch screen display and a PC (personal computer) 101b. The control PLC 102 is composed of a PLC (programmable logic controller) 102a, a table rotating unit 102b for controlling the table rotating mechanism 2, a chuck switch unit 102c for controlling the chuck switch mechanism 3, a cup upper and lower unit 102d for controlling the cup upper and lower mechanism 5, a nozzle scanning unit 102e for controlling the liquid medicine nozzle scanning mechanism 7, a liquid medicine temperature regulating circulation spraying unit 102f for controlling the liquid medicine temperature regulating circulation spraying mechanism 9, a water spraying unit 102g for controlling the spraying of water 15, and a lower surface gas temperature regulating spraying unit 102h for controlling the lower surface gas temperature regulating spraying mechanism 11.

[0051] The operator places a carrier (not shown) containing semiconductor wafers 1 at the loading port, selects a process pre-registered in PC 101b on MM-IF 101a, and inputs a start of processing. PC 101b transmits the processing parameters set in the process to PLC 102a, and starts a series of control actions of PLC 102a. PLC 102a controls a transport robot (not shown) and a processing chamber, etc., and the transport robot performs mapping of the wafer mounting slot in the carrier and the transport of the semiconductor wafer 1 between the carrier and the processing chamber, and performs a series of processing on the semiconductor wafer 1 in the processing chamber.

[0052] Next, the preparation of the medicinal liquid 14 of the medicinal liquid temperature regulating circulation ejection mechanism 9 is described. In this example, the desired medicinal liquid 14 is prepared using two stock solutions. A prescribed amount of the first stock solution 12 is supplied from the first stock solution tank 9b to the medicinal liquid circulation tank 9a, and a prescribed amount of the second stock solution 13 is supplied from the second stock solution tank 9c to the medicinal liquid circulation tank 9a. While the medicinal liquid circulation pump 9d is operated to circulate the medicinal liquid 14, the prescribed temperature is adjusted by the medicinal liquid temperature regulator 9e. When the circulation flow rate and temperature of the medicinal liquid 14 reach the prescribed range, the preparation of the medicinal liquid 14 is completed. In addition, the following operation is usually performed, that is, if the medicinal liquid components are reduced due to volatilization, decomposition and use, the first stock solution 12 and the second stock solution 13 are replenished at any time according to the reduction in the liquid amount.

[0053] Next, the operation of the processing chamber is described. The semiconductor wafer 1 is supplied with room temperature gas 16 after passing through the gas heating device 11a from the lower surface gas nozzle 2c, and the chuck pin 3b is opened and closed by rotating the chuck pin base 3a of the chuck switch mechanism 3, so that it can be placed on the chuck table 2b of the workbench rotating mechanism 2. The room temperature gas 16 plays a role in holding the semiconductor wafer 1 through the Bernoulli effect. The chuck table 2b is rotated by the workbench rotating motor 2a, thereby rotating the semiconductor wafer 1 clamped by the chuck pin 3b. The liquid medicine nozzle 6 is assembled in the liquid medicine nozzle scanning mechanism 7, and the liquid medicine nozzle 6 can scan the upper surface of the semiconductor wafer 1 via the scanning axis 7b and the scanning arm 7c through the reciprocating rotation of the scanning motor 7a. The chemical liquid 14 is sprayed at a specified flow rate while the semiconductor wafer 1 is rotated at a specified rotation speed and the chemical liquid nozzle 6 is scanned at a specified speed, so that the chemical liquid 14a on the upper surface of the semiconductor wafer 1 is distributed on the upper surface of the semiconductor wafer 1 without omission, thereby performing chemical liquid treatment.

[0054] The chemical liquid 14a on the upper surface of the semiconductor wafer 1 is discharged from the end of the semiconductor wafer 1 due to the rotation of the semiconductor wafer 1, but the first cup body 5a of the cup body upper and lower mechanism 5 arranged in a manner to surround the periphery of the chuck table 2b rises, thereby becoming the recovered chemical liquid 14b and returning to the chemical liquid circulation tank 9a via the first gas-liquid separator 10a.

[0055] In the process of the chemical liquid treatment, in order to suppress the chemical liquid 14a on the upper surface of the semiconductor wafer 1 from spreading from the end of the semiconductor wafer 1 to the lower surface due to surface tension and suppress the temperature change at the peripheral part of the central part of the semiconductor wafer 1, the temperature-controlled gas 17 whose temperature is controlled to a predetermined temperature matching the temperature of the chemical liquid by the gas heating device 11a is supplied from the lower surface gas nozzle 2c located at the central part of the chuck table 2b. The temperature-controlled gas 17 plays a role of maintaining the semiconductor wafer 1 by the Bernoulli effect. Thus, sufficient in-plane uniformity in the chemical liquid treatment can be ensured. The temperature-controlled gas 17a on the lower surface of the semiconductor wafer 1 is recovered by the first cup body 5a together with the atmosphere on the upper surface of the semiconductor wafer 1, and becomes the temperature-controlled gas 17b exhausted through the first gas-liquid separator 10a.

[0056] When the chemical liquid treatment is completed, the discharge of the chemical liquid 14 is stopped, the chemical liquid nozzle scanning mechanism 7 is returned to the waiting position, and the second cup body 5 b is raised to start the water washing treatment.

[0057] Figure 7 2 is a cross-sectional view showing the water washing process in the treatment chamber. Figure 7 As shown, while the semiconductor wafer 1 is rotated at a predetermined rotation speed, water 15 is sprayed from the water nozzle 8 toward the center of the semiconductor wafer 1 at a predetermined flow rate, so that the water is evenly distributed on the upper surface of the semiconductor wafer 1 to perform water washing.

[0058] During the water washing process, in order to prevent the water 15a on the upper surface of the semiconductor wafer 1 from spreading from the end of the semiconductor wafer 1 to the lower surface due to surface tension, a room temperature gas 16 that has passed through the gas heating device 11a is supplied from the lower surface gas nozzle 2c located at the center of the chuck table 2b. The room temperature gas 16 plays a role of holding the semiconductor wafer 1 by the Bernoulli effect.

[0059] In addition, in the water washing process, since the heat conduction from the semiconductor wafer 1 to the water 15a is large, the high temperature gas during the process of the temperature-controlled gas 17 changing to the normal temperature gas 16 can be tolerated in most cases, and considering the subsequent drying process, there will be no problem even if the temperature-controlled gas 17 is maintained. Similarly, the semiconductor wafer 1 is maintained by the Bernoulli effect.

[0060] The room temperature gas 16a on the lower surface of the semiconductor wafer 1 is recovered by the second cup 5b together with the atmosphere on the upper surface of the semiconductor wafer 1, and becomes the room temperature gas 16b exhausted through the second gas-liquid separator 10b. At this time, the water 15b is discharged from the second gas-liquid separator 10b. If the water washing process is completed, the spraying of the water 15 is stopped and the drying process is started.

[0061] Figure 8is a cross-sectional view showing the drying process in the process chamber. Figure 8 As shown, the semiconductor wafer 1 is rotated at a predetermined rotation speed to perform spin drying.

[0062] In the drying process, in order to suppress the accumulation of water 15a (see Figure 7 ) spreads from the end of the semiconductor wafer 1 to the lower surface due to surface tension, or the splashes splashed from the second cup body 5b spread to the lower surface, further promoting the drying of the semiconductor wafer 1, and the temperature-controlled gas 17 that is temperature-controlled to a specified temperature matching the drying by the gas heating device 11a is supplied from the lower surface gas nozzle 2c located at the center of the chuck table 2b. The temperature-controlled gas 17 plays a role in maintaining the semiconductor wafer 1 through the Bernoulli effect.

[0063] By supplying the temperature-controlled gas 17 having a temperature higher than normal temperature, the semiconductor wafer 1 can be heated and the drying time can be shortened.

[0064] The temperature control gas 17 a on the lower surface of the semiconductor wafer 1 is recovered by the second cup 5 b together with the atmosphere on the upper surface of the semiconductor wafer 1 , and becomes the temperature control gas 17 b exhausted via the second gas-liquid separator 10 b .

[0065] Fig. 9 This is a flowchart showing the process steps performed by the semiconductor manufacturing apparatus according to the first embodiment.

[0066] like Fig. 9 As shown, the wafer holding process is composed of steps S201 to S206, the wafer processing process is composed of steps S207 to S209, the water washing and drying process is composed of steps S210 to S212, and the wafer carrying out process is composed of steps S213 to S217.

[0067] The PLC 102 a carries out the semiconductor wafer 1 stored in the carrier from the carrier by the hand of the transfer robot in step S201 , and rotates the chuck pin base 3 a to release the chuck pins 3 b in step S202 .

[0068] The PLC 102a places the robot arm at the transfer position on the chuck table 2b in step S203, and supplies room temperature gas to the lower surface in step S204 to transfer the semiconductor wafer 1 from the robot arm to the chuck table 2b.

[0069] The PLC 102a rotates the chuck pin base 3a to close the chuck pin 3b in step S205, moves the robot to the outside of the processing chamber in step S206, and raises the first cup 5a in step S207.

[0070] As described above, in step S208, the PLC 102a performs chemical liquid treatment by rotating the semiconductor wafer 1 at a predetermined rotation speed and scanning the chemical liquid nozzle 6 at a predetermined speed while ejecting the chemical liquid 14 at a predetermined flow rate, thereby distributing the chemical liquid 14a on the upper surface of the semiconductor wafer 1 without omission on the upper surface of the semiconductor wafer 1. During the chemical liquid treatment, in order to suppress the chemical liquid 14a on the upper surface of the semiconductor wafer 1 from spreading from the end of the semiconductor wafer 1 to the lower surface due to surface tension and suppressing the temperature change at the peripheral portion of the central portion of the semiconductor wafer 1, the temperature-controlled gas 17 that is controlled to a predetermined temperature matching the chemical liquid temperature by the gas heating device 11a is supplied from the lower surface gas nozzle 2c located at the central portion of the chuck table 2b.

[0071] The PLC 102a raises the second cup 5b in step S209, and in step S210, as described above, water 15 is sprayed from the water nozzle 8 at a predetermined flow rate toward the center of the semiconductor wafer 1 while the semiconductor wafer 1 is rotated at a predetermined rotation speed, so that water is evenly distributed on the upper surface of the semiconductor wafer 1 to perform water washing. During the water washing, in order to suppress the water on the upper surface of the semiconductor wafer 1 from spreading from the end of the semiconductor wafer 1 to the lower surface due to surface tension, a room temperature gas 16 that has passed through the gas heating device 11a is supplied from the lower surface gas nozzle 2c located at the center of the chuck table 2b.

[0072] In addition, during the water washing process, since the heat conduction from the semiconductor chip 1 to the water 15a is large, in most cases, high-temperature gas can be allowed during the process of converting the temperature-controlled gas 17 to the normal-temperature gas 16. Considering the subsequent drying process, no problem will occur even if the temperature-controlled gas 17 is maintained.

[0073] The PLC 102a spin-dries the semiconductor wafer 1 by rotating it at a predetermined rotation speed in step S211. During the drying process, in order to prevent the water 15a on the upper surface of the semiconductor wafer 1 from spreading from the end of the semiconductor wafer 1 due to surface tension, or the splashes from the second cup 5b from spreading to the lower surface, and to further promote the drying of the semiconductor wafer 1, a temperature-controlled gas 17 that has been temperature-controlled to a predetermined temperature matching the drying by the gas heating device 11a is supplied from the lower surface gas nozzle 2c located at the center of the chuck table 2b.

[0074] In step S212, the PLC 102a lowers the first cup 5a and the second cup 5b, supplies room temperature gas 16 after passing through the gas heating device 11a from the lower surface gas nozzle 2c located at the center of the chuck table 2b, and places the robot in the handover position in step S213.

[0075] The PLC 102a rotates the chuck pin base 3a to open the chuck pin 3b in step S214, transfers the semiconductor wafer 1 from the chuck table 2b to the robot in step S215, and stops the room temperature gas 16 from the lower surface gas nozzle 2c located at the center of the chuck table 2b.

[0076] The PLC 102a stores the semiconductor wafer 1 in the carrier by the robot in step S216, and rotates the chuck pin base 3a to close the chuck pins 3b in step S217.

[0077] In the range of steps S204 to S215 , the room temperature gas 16 or the temperature-controlled gas 17 is supplied in order to hold the semiconductor wafer 1 by the Bernoulli effect.

[0078] The response requiring gas heating is to enable the normal temperature gas 16 to be supplied as the temperature control gas 17 from the time the semiconductor wafer 1 is held to the time the chemical solution is processed. For example, there is no problem as long as the response is 20 seconds or less.

[0079] The response that requires gas cooling is the situation where the temperature of the semiconductor chip 1 is reduced to a temperature that does not affect the transportation during the period from the drying of the semiconductor chip 1 to the removal. For example, when the temperature that does not affect the transportation is 60°C, even if drying is performed with a temperature-controlled gas of less than or equal to 80°C in order to achieve a response of less than or equal to 30 seconds, sufficient drying performance can be obtained.

[0080] In order to simplify the description, each step is roughly described in sequence, but it goes without saying that in reality, detailed action steps are performed in parallel, and various inputs and outputs related to the actions are performed.

[0081] <Effect>

[0082] As described above, in the gas heating device 11a according to the first embodiment, the induction coil 57 is arranged on the lower surface of the heat-resistant container 54 along the heating element 51, so that the magnetic flux distribution of the induction coil 57 is uniform and optimized. Thus, the temperature of the heating element 51 can be made uniform during heating or cooling.

[0083] Furthermore, the flat heating element 51 is arranged in a space 54i having the same flat shape as the heating element 51 with a gap therebetween, so that the gap around the heating element 51 is uniform. Thus, the gas flowing through the space 54i of the heat-resistant container 54 can be uniformly heated or cooled. In summary, the gas of the desired temperature can be stably obtained without increasing the heat capacity of the heating element 51 or increasing the area of ​​the heating element 51, so that the response when heating or cooling the gas can be improved.

[0084] Furthermore, by making the temperature of the heating element 51 uniform during heating or cooling, it is possible to suppress a part of the heating element 51 from locally becoming high temperature, thereby suppressing melting of the heating element 51 and realizing long-life pollution-free gas heating.

[0085] In the semiconductor manufacturing apparatus, by controlling the power supplied to the induction coil 57 of the gas heating device 11 a , the process is performed while controlling the temperature of the gas output from the gas heating device 11 a to a temperature set in a process step corresponding to the process.

[0086] Therefore, the response when heating or cooling the gas by the gas heating device 11a becomes faster. When gases of different temperatures are used during the treatment process, there is no need to prepare multiple supply systems according to the temperature and switch them, and the structure of the supply system becomes simple.

[0087] In addition, the temperature of the gas is controlled to a temperature set in each process step of the treatment, so that, for example, heating to a certain temperature during a liquid treatment such as etching or removal treatment for only about 1 minute can be performed without any problem.

[0088] In addition, in the past, a Bernoulli chuck mechanism was used as a means for holding the semiconductor wafer 1, but the flow rate of the gas used was large, so when the semiconductor wafer 1 was processed at a predetermined chemical solution temperature, if gases of different temperatures were used, the uniformity of the processing deteriorated. However, in the first embodiment, in order to hold the semiconductor wafer 1, the gas is supplied to the surface side of the semiconductor wafer 1 opposite to the processing surface, so the temperature of the gas is set to match the processing temperature of the semiconductor wafer 1, thereby improving the uniformity of the processing.

[0089] Furthermore, in order to prevent the chemical liquid ejected from the chemical liquid nozzle 6 from spreading to the surface of the semiconductor wafer 1 opposite to the processing surface, the gas used for processing the processing surface of the semiconductor wafer 1 is supplied to the surface of the semiconductor wafer 1 opposite to the processing surface.

[0090] Conventionally, as the gas supplied to the side opposite to the processing surface of the semiconductor wafer 1, there is a sealing gas or the like for preventing the chemical solution sprayed onto the processing surface of the semiconductor wafer 1 from spreading to the lower surface of the bevel portion. When the semiconductor wafer 1 is processed at a predetermined chemical solution temperature, if a gas of a different temperature is used as the sealing gas, the uniformity of the processing is deteriorated.

[0091] On the other hand, in the first embodiment, the temperature of the gas is adjusted by the gas heating device 11 a , so that the temperature of the gas is matched with the processing temperature of the semiconductor wafer 1 , thereby improving the uniformity of the processing.

[0092] In addition, if Figure 2 As shown, the heating element 51 has one main surface and another main surface opposite to the one main surface, and is provided with a plurality of through holes 51a2 that penetrate from one main surface to the other main surface. Therefore, the gases flowing through the upper and lower surfaces of the flat heating element 51 flow through the plurality of through holes 51a2 and interfere with each other, generating turbulence, stirring the nearby gases, thereby achieving temperature uniformity.

[0093] In addition, if Figure 3 As shown, the heating element 51 has one main surface and another main surface opposite to the one main surface, and a plurality of concave and convex surfaces are provided on the one main surface and the other main surface. Therefore, the gas flowing through the upper surface and the lower surface of the flat heating element 51 flows through the plurality of concave and convex surfaces and generates turbulence on the upper surface and the lower surface respectively, stirring the nearby gas, thereby achieving temperature uniformity.

[0094] <Implementation method 2>

[0095] Next, a semiconductor manufacturing apparatus according to the second embodiment will be described. Fig.10 It is a cross-sectional view showing a chemical solution process in a processing chamber of a semiconductor manufacturing apparatus according to Embodiment 2. In Embodiment 2, the same components as those described in Embodiment 1 are denoted by the same reference numerals, and description thereof is omitted.

[0096] like Fig.10 As shown, the semiconductor manufacturing device has a workbench rotating mechanism 2, a platform 4, a cup body up and down mechanism 5, a liquid medicine nozzle 6, a liquid medicine nozzle scanning mechanism 7, a water nozzle 8, a liquid medicine temperature control circulation spraying mechanism 9, a first gas-liquid separator 10a, a switch valve 18 and a lower surface gas temperature control spraying mechanism 20.

[0097] In the first embodiment, the semiconductor manufacturing apparatus has a chuck opening and closing mechanism 3 for clamping the semiconductor wafer 1 from the side using the chuck pins 3b. In contrast, in the second embodiment, the table rotating mechanism 2 has an adsorption chuck table 2d for adsorbing and holding the semiconductor wafer 1 from the lower surface, and is not configured to supply the temperature control gas from the center of the lower surface of the semiconductor wafer 1 toward the periphery.

[0098] In addition, in Embodiment 2, the semiconductor manufacturing apparatus has a lower surface gas temperature control ejection mechanism 20 instead of the lower surface gas temperature control ejection mechanism 11. The lower surface gas temperature control ejection mechanism 20 has a gas heating device 20a and a switch valve 20b. The switch valve 20b is arranged on the inlet side of the gas heating device 20a. In addition, the gas heating device 20a has the same structure as the gas heating device 11a.

[0099] The temperature of the gas extracted from the gas heating device 20a is controlled by controlling the power supplied to the induction coil 57 of the gas heating device 20a. Specifically, the gas heating device 20a is controlled in such a manner that the gas is heated or cooled to a temperature set in a process step corresponding to the treatment of the treatment surface of the semiconductor wafer 1 based on the power supplied to the induction coil 57.

[0100] When power is supplied to the induction coil 57, the switch valve 20b is opened, so that the normal temperature gas 21 is temperature-controlled by the gas heating device 20a to become the temperature-controlled gas 22, and the temperature-controlled gas 22 is supplied to the lower surface gas nozzle 2e. On the other hand, when power is not supplied to the induction coil 57, the switch valve 20b is opened, so that although the normal temperature gas 21 flows through the gas heating device 20a, it is not temperature-controlled by the gas heating device 20a, and is supplied to the lower surface gas nozzle 2e while maintaining the state of the normal temperature gas 21. The lower surface gas nozzle 2e is a nozzle that supplies the gas led out from the gas heating device 20a to the semiconductor wafer 1 when the processing surface of the semiconductor wafer 1 is processed. Here, the processing of the processing surface of the semiconductor wafer 1 related to the lower surface gas nozzle 2e refers to the liquid treatment, water washing treatment and drying treatment performed in the processing chamber.

[0101] The vacuum 19 acts on the suction chuck stage 2d through the on-off valve 18, whereby the center portion of the lower surface of the semiconductor wafer 1 comes into close contact with the suction chuck stage 2d.

[0102] Therefore, during the liquid treatment, in order to suppress the liquid 14a on the upper surface of the semiconductor chip 1 from spreading from the end of the semiconductor chip 1 to the lower surface due to surface tension, a temperature-controlled gas 22 adjusted to a specified temperature matching the liquid temperature by a gas heating device 20a is supplied from an annular lower surface gas nozzle 2e located on the outside of the adsorption chuck table 2d.

[0103] The temperature control gas 22a on the lower surface of the semiconductor wafer 1 is recovered by the first cup 5a together with the atmosphere on the upper surface of the semiconductor wafer 1 to become the temperature control gas 22b exhausted via the first gas-liquid separator 10a.

[0104] When the chemical liquid treatment is completed, the discharge of the chemical liquid 14 is stopped, the chemical liquid nozzle scanning mechanism 7 is returned to the waiting position, and the second cup body 5 b is raised to start the water washing treatment.

[0105] In the water washing process, in order to suppress the water 15a (see Figure 7) Due to surface tension, the semiconductor wafer 1 spreads from the end to the lower surface, and the room temperature gas 21 that has passed through the gas heating device 20a is supplied from the annular lower surface gas nozzle 2e located on the outside of the adsorption chuck table 2d.

[0106] Furthermore, during the water washing process, the heat conduction from the semiconductor wafer 1 to the water 15a is large, and thus in most cases, the high temperature gas during the transition from the temperature-controlled gas 22 to the normal temperature gas 21 can be tolerated. Considering the subsequent drying process, even if the temperature-controlled gas 22 is maintained, no problem will occur.

[0107] In the drying process, in order to suppress the accumulation of water 15a (see Figure 7 ) Due to surface tension, the droplets spread from the end of the semiconductor chip 1 to the lower surface, or the droplets splashed from the second cup body 5b spread to the lower surface, further promoting the drying of the semiconductor chip 1, and the temperature-controlled gas 22 that is adjusted to a specified temperature matching the drying through the gas heating device 20a is supplied from the annular lower surface gas nozzle 2e located on the outside of the adsorption chuck table 2d.

[0108] By supplying the temperature-controlled gas 22 having a temperature higher than normal temperature, the semiconductor wafer 1 can be heated and the drying time can be shortened.

[0109] The temperature control gas 22 a on the lower surface of the semiconductor wafer 1 is recovered by the second cup 5 b together with the atmosphere on the upper surface of the semiconductor wafer 1 , and becomes the temperature control gas 22 b exhausted via the second gas-liquid separator 10 b .

[0110] <Effect>

[0111] As described above, in the semiconductor manufacturing apparatus according to the second embodiment, the response when heating or cooling the gas can be improved, as in the case of the first embodiment. In addition, the response when heating or cooling the gas by the gas heating device 20a becomes faster, and thus, when different temperatures of gas are used in the process, it is not necessary to prepare a plurality of supply systems according to the temperature and switch them, and the structure of the supply system becomes simple.

[0112] In addition, similarly to the case of the first embodiment, in order to suppress the spread of the chemical liquid ejected from the chemical liquid nozzle 6 to the surface of the semiconductor wafer 1 opposite to the processing surface, the gas used for processing the processing surface of the semiconductor wafer 1 is supplied to the surface side of the semiconductor wafer 1 opposite to the processing surface. The temperature of the gas is adjusted by the gas heating device 20a, thereby, by setting the temperature of the gas to match the processing temperature of the semiconductor wafer 1, the uniformity of the processing is improved.

[0113] <Implementation method 3>

[0114] Next, a semiconductor manufacturing apparatus according to the third embodiment will be described. Fig.11 It is a cross-sectional view showing a chemical solution process in a processing chamber of a semiconductor manufacturing apparatus according to Embodiment 3. In Embodiment 3, the same components as those described in Embodiments 1 and 2 are denoted by the same reference numerals, and description thereof is omitted.

[0115] like Fig.11 As shown, the semiconductor manufacturing device has a workbench rotating mechanism 2, a chuck switching mechanism 3, a platform 4, a cup up and down mechanism 5, a dual-fluid liquid nozzle 6a, a liquid nozzle scanning mechanism 7, a water nozzle 8, a liquid temperature control circulation spraying mechanism 9, a first gas-liquid separator 10a, a lower surface gas temperature control spraying mechanism 11 and a liquid gas temperature control spraying mechanism 23.

[0116] In the third embodiment, the semiconductor manufacturing apparatus includes a two-fluid chemical liquid nozzle 6 a instead of the chemical liquid nozzle 6 , and the two-fluid chemical liquid nozzle 6 a mixes the chemical liquid with the gas used for processing the processing surface of the semiconductor wafer 1 and ejects the mixture.

[0117] The chemical liquid gas temperature control ejection mechanism 23 includes a gas heating device 23a and an on-off valve 23b. The on-off valve 23b is disposed on the inlet side of the gas heating device 23a. The gas heating device 23a has the same structure as the gas heating device 11a.

[0118] The temperature of the gas extracted from the gas heating device 23a is controlled by controlling the power supplied to the induction coil 57 of the gas heating device 23a. Specifically, the gas heating device 23a is controlled in such a manner that the gas is heated or cooled to a temperature set in a process step corresponding to the treatment of the treatment surface of the semiconductor wafer 1 based on the power supplied to the induction coil 57.

[0119] When power is supplied to the induction coil 57, the switch valve 23b is opened, so that the normal temperature gas 24 is temperature-controlled by the gas heating device 23a to become the temperature-controlled gas 25, and the temperature-controlled gas 25 is supplied to the two-fluid chemical liquid nozzle 6a. On the other hand, when power is not supplied to the induction coil 57, the switch valve 23b is opened, so that although the normal temperature gas 24 flows through the gas heating device 23a, it is not temperature-controlled by the gas heating device 23a, and is supplied to the two-fluid chemical liquid nozzle 6a while maintaining the state of the normal temperature gas 24. The two-fluid chemical liquid nozzle 6a is a nozzle that supplies the gas led out from the gas heating device 23a to the semiconductor wafer 1 when the processing surface of the semiconductor wafer 1 is processed. Here, the processing of the processing surface of the semiconductor wafer 1 related to the two-fluid chemical liquid nozzle 6a refers to the chemical liquid processing performed in the processing chamber.

[0120] When the semiconductor wafer 1 is processed at a specified liquid temperature, in order to improve the cleaning power, it is necessary to mix a gas having a temperature greater than or equal to the liquid temperature when mixing the gas into the liquid through the two-fluid liquid nozzle 6a, but a heating or cooling means with good response is indispensable. The flow rate of the gas used by the two-fluid liquid nozzle 6a is as little as about 1 / 4 compared to the case of wafer retention shown in Embodiment 1. Therefore, even when the same structure as that of Embodiment 1, i.e., the gas heating device 23a, is used, the response of the gas heating is shortened to about 1 / 2 compared to the case of Embodiment 1, and even if the power supply is turned on / off for each semiconductor wafer 1 processing, it can be handled without problems. That is, it is not necessary to always supply the temperature-adjusting gas 25 to the two-fluid liquid nozzle 6a.

[0121] <Effect>

[0122] As described above, in the semiconductor manufacturing apparatus according to the third embodiment, similarly to the case of the first embodiment, it is possible to improve the response when heating or cooling the gas.

[0123] Furthermore, since the gas used for processing the processing surface of the semiconductor wafer 1 is mixed with the chemical liquid and ejected from the two-fluid chemical liquid nozzle 6 a onto the processing surface of the semiconductor wafer 1 , the cleaning power for the processing surface of the semiconductor wafer 1 can be improved.

[0124] In addition, the various embodiments can be freely combined, or the various embodiments can be appropriately modified or omitted.

[0125] Description of the label

[0126] 1 semiconductor wafer, 2b chuck table, 2c lower surface gas nozzle, 6 liquid medicine nozzle, 6a dual fluid liquid medicine nozzle, 11a gas heating device, 20a gas heating device, 23a gas heating device, 51 heating element, 51a2 through hole, 54 heat-resistant container, 55 gas inlet connector, 56 gas outlet connector, 57 induction coil.

Claims

1. A gas heating device, comprising: A flat heating element is disposed between the rectifying plate and the flat induction plate; a heat-resistant container having a flat plate-shaped space inside, wherein the rectifying plate, the induction plate, and the heating element are arranged in the space with gaps between the heating element and the rectifying plate and between the heating element and the induction plate; A gas introduction joint, connected to the heat-resistant container, for introducing gas into the space; a gas outlet joint connected to the heat-resistant container to outlet the gas flowing through the space to the outside; and The induction coil is disposed on the lower surface of the heat-resistant container along the heating element and performs induction heating on the heating element based on the supplied power.

2. A semiconductor manufacturing device comprising: The gas heating device according to claim 1; a chuck stage on which a semiconductor wafer is placed; and a nozzle for supplying the gas outputted from the gas heating device to the semiconductor wafer when the processing surface of the semiconductor wafer is processed, The process is performed while controlling the power supplied to the induction coil of the gas heating device to control the temperature of the gas output from the gas heating device to a temperature set in a process step corresponding to the process.

3. The semiconductor manufacturing apparatus according to claim 2, wherein: In order to hold the semiconductor wafer, the gas used in the process is supplied to a surface side of the semiconductor wafer opposite to the process surface.

4. The semiconductor manufacturing apparatus according to claim 2, wherein: The device further comprises: a chemical liquid nozzle for spraying a chemical liquid toward the processing surface of the semiconductor wafer; In order to suppress the chemical liquid ejected from the chemical liquid nozzle from spreading to the surface of the semiconductor wafer opposite to the processing surface, the gas used in the process is supplied to the surface side of the semiconductor wafer opposite to the processing surface.

5. The semiconductor manufacturing apparatus according to claim 2, wherein: The nozzle is a two-fluid liquid medicine nozzle that mixes the liquid medicine with the gas used in the treatment and sprays the mixture. The gas used in the process is mixed with the chemical liquid and ejected from the two-fluid chemical liquid nozzle to the process surface of the semiconductor wafer.

6. A heating element, which is the heating element of the gas heating device according to claim 1, The heating element has one main surface and another main surface opposite to the one main surface. The heat generating element is provided with a plurality of through holes penetrating from the one main surface through the other main surface.

7. A heating element, which is the heating element of the gas heating device according to claim 1, The heating element has one main surface and another main surface opposite to the one main surface. The heat generating element is provided with a plurality of depressions and projections extending over the one main surface and the other main surface.

8. A semiconductor manufacturing method using the semiconductor manufacturing apparatus according to claim 2, The semiconductor manufacturing method includes a wafer processing step, in which the processing surface of the semiconductor wafer is processed by spraying a chemical solution onto the processing surface of the semiconductor wafer while rotating the semiconductor wafer. In the wafer processing step, the gas outputted from the gas heating device is supplied to a surface side of the semiconductor wafer opposite to the processing surface.

9. The semiconductor manufacturing method according to claim 8, wherein: In the wafer processing step, the chemical liquid is mixed with the gas output from the gas heating device and ejected.

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