Phase shifter and antenna

Abstract

The present invention provides a phase shifter and an antenna, belonging to the field of communication technologies. The phase shifter of the present invention includes: a first substrate and a second substrate disposed opposite to each other, and a dielectric layer located between the first substrate and the second substrate; the first substrate includes: a first base, and a transmission line located on a side of the first base close to the dielectric layer, the transmission line having a first transmission end, a second transmission end, and a transmission main body; the second substrate includes: a second base, and a reference electrode located on a side of the second base close to the dielectric layer, and the reference electrode at least partially overlaps with the orthographic projection of the transmission line on the first base, and a first opening is provided on the reference electrode; the phase shifter further includes: an auxiliary functional structure, the auxiliary functional structure is connected to the second transmission end of the transmission line, and at least part of the orthographic projection of the first opening on the first base overlaps with the orthographic projection of the auxiliary functional structure on the first base.

Description

Technical Field

[0001] The present disclosure belongs to the field of wireless communication technologies, and particularly relates to a phase shifter and an antenna. Background Art

[0002] A phase shifter is a device for regulating the phase of an electromagnetic wave and is widely used in various communication systems such as satellite communication, phased array radar, remote sensing and telemetry, etc.

[0003] There are a large number of low-frequency interference signals in the ground environment, such as GSM, 3G, 4G, 5G sub 6, GPS, Wifi, etc. and their high-order harmonics. Traditional phase shifters cannot filter out the interference signals existing in the ground environment, resulting in a reduction in the signal-to-noise ratio of the antenna. Summary of the Invention

[0004] The present disclosure aims to at least solve one of the technical problems existing in the prior art, and provides a phase shifter and an antenna.

[0005] In a first aspect, an embodiment of the present disclosure provides a phase shifter, which includes: a first substrate and a second substrate disposed opposite to each other, and a dielectric layer located between the first substrate and the second substrate;

[0006] The first substrate includes: a first base, and a transmission line located on a side of the first base close to the dielectric layer, the transmission line having a first transmission end, a second transmission end, and a transmission main body;

[0007] The second substrate includes: a second base, and a reference electrode located on a side of the second base close to the dielectric layer, and the reference electrode at least partially overlaps a positive projection of the transmission line on the first base, and a first opening is provided on the reference electrode;

[0008] The phase shifter further includes:

[0009] An auxiliary functional structure, the auxiliary functional structure is connected to the second transmission end of the transmission line, and a positive projection of the first opening on the first base and a positive projection of the auxiliary functional structure on the first base at least partially overlap.

[0010] Optionally, the auxiliary functional structure is a microstrip filtering structure, and the microstrip filtering structure includes a plurality of resonant units, and adjacent resonant units are coupled to each other.

[0011] Optionally, the microstrip filtering structure includes a first resonant unit, a second resonant unit, a third resonant unit, a fourth resonant unit, and a fifth resonant unit;

[0012] Wherein,

[0013] The first resonant unit and the fifth resonant unit are the same in shape and are strip-shaped;

[0014] The second resonant unit, the third resonant unit, and the fourth resonant unit are the same in shape and are U-shaped. The opening directions of the second resonant unit and the fourth resonant unit are the same and are opposite to the opening direction of the third resonant unit.

[0015] Optionally, the microstrip filtering structure further includes:

[0016] A first connection unit, and the first connection unit is electrically connected to the first resonant unit;

[0017] A second connection unit, and the second connection unit is electrically connected to the fifth resonant unit.

[0018] Optionally, the microstrip filtering structure includes a sixth resonant unit, a seventh resonant unit, an eighth resonant unit, and a ninth resonant unit arranged in parallel;

[0019] Wherein,

[0020] The sixth resonant unit includes a first sub-resonant unit and a second sub-resonant unit, and the width of the first sub-resonant unit is greater than the width of the second sub-resonant unit;

[0021] The seventh resonant unit includes a third sub-resonant unit and a fourth sub-resonant unit, and the width of the third sub-resonant unit is less than the width of the fourth sub-resonant unit;

[0022] The eighth resonant unit includes a fifth sub-resonant unit and a sixth sub-resonant unit, and the width of the fifth sub-resonant unit is greater than the width of the sixth sub-resonant unit;

[0023] The ninth resonant unit includes a seventh sub-resonant unit and an eighth sub-resonant unit, and the width of the seventh sub-resonant unit is less than the width of the eighth sub-resonant unit.

[0024] Optionally, the phase shifter further includes:

[0025] A third connection unit, and the third connection unit is connected to the sixth resonant unit;

[0026] A fourth connection unit, and the fourth connection unit is connected to the ninth resonant unit.

[0027] Optionally, the microstrip filtering structure is arranged on the same layer as the transmission line and has the same material.

[0028] Optionally, the transmission main body portion includes at least one meandering line electrically connected to the first transmission end and the second transmission end.

[0029] Optionally, the orthographic projection of the first opening on the first substrate does not overlap with the orthographic projection of the at least one meandering line on the first substrate.

[0030] Optionally, the reference electrode further includes a second opening, the orthographic projection of the second opening on the first substrate does not overlap with the orthographic projection of the first opening on the first substrate, and the orthographic projection of the first transmission end on the first substrate at least partially overlaps with the orthographic projection of the second opening on the first substrate.

[0031] Optionally, the phase shifter further includes: a first waveguide structure and a second waveguide structure; the first waveguide structure is configured to transmit a microwave signal in a coupled manner with the first transmission end of the transmission line through the second opening; the second waveguide structure is configured to transmit a microwave signal in a coupled manner with the second transmission end of the transmission line through the first opening.

[0032] Optionally, the first port of the first waveguide structure is disposed on a side of the first substrate away from the dielectric layer; the first port of the second waveguide is disposed on a side of the second substrate away from the dielectric layer;

[0033] The extending direction of the orthographic projection of the first transmission end on the first substrate passes through the center of the orthographic projection of the first port of the first waveguide structure on the first substrate; and / or,

[0034] The extending direction of the orthographic projection of the second transmission end on the second substrate passes through the center of the orthographic projection of the first port of the second waveguide structure on the second substrate.

[0035] Optionally, the orthographic projection of the first port of the first waveguide structure on the first substrate completely overlaps with the orthographic projection of the first opening on the first substrate;

[0036] The orthographic projection of the first port of the second waveguide structure on the second substrate completely overlaps with the orthographic projection of the second opening on the second substrate.

[0037] Optionally, the phase shifter has a microwave transmission region and a peripheral region surrounding the microwave transmission region; the second substrate further includes an isolation structure disposed on the second substrate; the isolation structure is located in the peripheral region and surrounds the microwave transmission region.

[0038] Optionally, the isolation structure is located on a side of the reference electrode close to the second substrate, and the reference electrode extends to the peripheral region and overlaps with the isolation structure.

[0039] Optionally, the reference electrode has a slot located in the peripheral region, and there is an overlap between the isolation structure and the positive projection of the slot on the second substrate.

[0040] Optionally, the material of the dielectric layer includes liquid crystal.

[0041] In a second aspect, an embodiment of the present disclosure provides an antenna including the above-mentioned phase shifter. Description of the Drawings

[0042] Figure 1 is a schematic structural diagram of a phase shifter provided by an embodiment of the present disclosure;

[0043] Figure 2 is Figure 1 a sectional view taken along line A-A' of the phase shifter shown;

[0044] Figure 3 is Figure 1 a top view (transmission line side) of the first substrate in the phase shifter shown;

[0045] Figure 4 is Figure 1 a top view (ground electrode side) of the second substrate in the phase shifter shown;

[0046] Figure 5 is a schematic structural diagram of a microstrip filter structure provided by an embodiment of the present disclosure;

[0047] Figure 6 is a schematic structural diagram of another microstrip filter structure provided by an embodiment of the present disclosure;

[0048] Figure 7 is a schematic sectional structure diagram of another phase shifter provided by an embodiment of the present disclosure;

[0049] Figure 8 is a schematic sectional structure diagram of yet another phase shifter provided by an embodiment of the present disclosure;

[0050] Figure 9 is a schematic sectional structure diagram of yet another phase shifter provided by an embodiment of the present disclosure;

[0051] Figure 10 is a schematic sectional structure diagram of yet another phase shifter provided by an embodiment of the present disclosure;

[0052] Figure 11 is a schematic structural diagram of yet another phase shifter provided by an embodiment of the present disclosure;

[0053] Figure 12 is Figure 11 a sectional view taken along line B-B' of the phase shifter shown;

[0054] Figure 13 Schematic diagram of a first waveguide structure according to an embodiment of the present disclosure;

[0055] Figure 14 Schematic diagram of another phase shifter provided by an embodiment of the present disclosure;

[0056] Figure 15 is Figure 14 Cross-sectional view of C-C' of the phase shifter shown;

[0057] Figure 16 is Figure 14 Top view (transmission line side) of the second substrate in the phase shifter shown. Detailed implementation manners

[0058] To enable those skilled in the art to better understand the technical solutions of the present disclosure, the present disclosure will be further described in detail below with reference to the accompanying drawings and specific implementation manners.

[0059] Unless otherwise defined, the technical terms or scientific terms used in the present disclosure should have the ordinary meanings understood by those of ordinary skill in the art to which the present disclosure belongs. The "first", "second" and similar terms used in the present disclosure do not denote any order, quantity or importance, but are only used to distinguish different components. Similarly, the terms such as "a", "one" or "the" do not denote a quantity limitation, but mean that there is at least one. The terms such as "including" or "comprising" mean that the elements or objects appearing before the term cover the elements or objects listed after the term and their equivalents, without excluding other elements or objects. The terms such as "connected" or "coupled" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. The terms such as "upper", "lower", "left" and "right" are only used to represent relative positional relationships, and when the absolute position of the object being described changes, the relative positional relationship may also change accordingly.

[0060] Before describing the following embodiments, it should be noted that the dielectric layer in the phase shifter provided in the following embodiments includes, but is not limited to, a liquid crystal layer, and only the liquid crystal layer is taken as an example for illustration. The reference electrode in the phase shifter includes, but is not limited to, a ground electrode, as long as it can form a current loop with the transmission line. In the embodiments of the present invention, only the ground electrode is taken as an example for illustration. When the first transmission end of the transmission line is used as the receiving end, the second transmission end of the transmission line is used as the sending end; when the second transmission end of the transmission line is used as the receiving end, the first transmission end of the transmission line is used as the sending end. For ease of understanding, in the following description, it is taken as an example that the first transmission end of the transmission line is the receiving end and the second transmission end is the sending end.

[0061] In addition, in the embodiments of the present disclosure, the transmission line may be a delay line or a strip transmission line, etc. For ease of description, in the embodiments of the present disclosure, the delay line is taken as an example of the transmission line. Among them, the shape of the delay line includes, but is not limited to, any one or a combination of a bow shape, a wave shape, and a sawtooth shape.

[0062] It should be noted that the auxiliary function structure in the present disclosure is described by taking the filtering structure as an example. It can be understood that the auxiliary function structure can also be other types of structures, which are not specifically limited herein.

[0063] Figure 1 FIG. [X] is a schematic structural diagram of a phase shifter according to an embodiment of the present disclosure; Figure 2 is Figure 1 a sectional view taken along line A-A' of the phase shifter shown in FIG. [X], as Figure 1 and 2 shown, the phase shifter includes a first substrate and a second substrate disposed opposite to each other, and a liquid crystal layer 30 disposed between the first substrate and the second substrate. Among them, the first substrate includes a first base 10, a transmission line 11 and a bias line 12 disposed on the side of the first base 10 close to the liquid crystal layer 30, and a first alignment layer 13 disposed on the side of the transmission line 11 and the bias line 12 away from the first base 10. The second substrate includes a second base 20, a ground electrode 21 disposed on the side of the second base 20 close to the liquid crystal layer 30, a second alignment layer 22 disposed on the side of the ground electrode 21 close to the liquid crystal layer 30, and the reference electrode at least partially overlaps with the positive projection of the transmission line on the first base. Of course, as Figure 1 shown in FIG. [X], the phase shifter not only includes the above structure, but also includes a support structure 40 for maintaining the cell thickness of the liquid crystal cell (the cell thickness between the first substrate and the second substrate), and a sealing adhesive 50 for sealing the liquid crystal cell and other structures, which will not be described one by one here.

[0064] Figure 3 is Figure 1 a top view of the first substrate in the phase shifter shown in FIG. [X] (on the side of the transmission line 11); as Figure 3As shown, the transmission line 11 has a first transmission end 11a, a second transmission end 11b, and a transmission main body; wherein, the first transmission end 11a, the second transmission end 11b, and the transmission main body 11c all have a first end point and a second end point; the first end point of the first transmission end 11a is electrically connected to the first end point of the transmission main body 11c, and the first end point of the second transmission end 11b is electrically connected to the second end point of the transmission main body 11c. Here, it should be noted that the first end point and the second end point are relative concepts. If the first end point is the head end, then the second end point is the tail end, and vice versa. In addition, in the embodiment of the present disclosure, the first end point of the first transmission end 11a is electrically connected to the first end point of the transmission main body 11c, and at this time, the first end point of the first transmission end 11a and the first end point of the transmission main body 11c can be co-end points. Correspondingly, the first end point of the second transmission end 11b is electrically connected to the second end point of the transmission main body 11c, and the first end point of the second transmission end 11b and the second end point of the transmission main body 11c are co-end points.

[0065] The transmission main body 11c includes, but is not limited to, a meandering line, and the number of meandering lines can be one or more. The shape of the meandering line includes, but is not limited to, a bow shape, a wave shape, etc.

[0066] It should be noted that when the first transmission end 11a is used as the receiving end of the microwave signal, the second transmission end 11b is used as the transmitting end of the microwave signal; correspondingly, when the second transmission end 11b is used as the receiving end of the microwave signal, the first transmission end 11a is used as the transmitting end of the microwave signal. The embodiment of the present disclosure takes the second transmission end 11b as the receiving end of the microwave signal and the first transmission end 11a as the transmitting end of the microwave signal as an example for illustration. The bias line 12 is electrically connected to the transmission line 11 and is configured to load a DC bias signal on the transmission line 11 so as to form a DC steady-state electric field between the transmission line 11 and the ground electrode 21. Microscopically, the liquid crystal molecules of the liquid crystal layer 30 deflect due to the electric field force, and the axial orientation changes. Macroscopically, the dielectric constant of the liquid crystal layer 30 is changed. When a microwave signal is transmitted between the transmission line 11 and the ground electrode 21, the change in the dielectric constant of the liquid crystal layer 30 causes a corresponding change in the phase of the microwave signal. Specifically, the magnitude of the phase change amount of the microwave signal is positively correlated with the deflection angle of the liquid crystal molecules and the electric field strength, that is, applying a DC bias voltage can change the phase of the microwave signal, which is the working principle of the liquid crystal phase shifter.

[0067] Figure 4 For Figure 1 the top view of the second substrate in the phase shifter shown (on the side of the ground electrode 21); as Figure 4As shown, the ground electrode 21 has a first opening 211, which is used for radiating microwave signals, and the length of the first opening 211 in the first direction is not less than the line width of the delay line. The first direction refers to the direction perpendicular to the extension direction of the second transmission end 11b of the transmission line 11, that is, Figure 4 The length of the first opening 211 on the ground electrode 21 in the first direction is Figure 4 The maximum length of the first opening 211 in the X direction. Figure 1 The phase shifter also includes a filter structure 100, which is connected to the second transmission end 11b of the transmission line, and the orthographic projection of the first opening 211 on the first substrate 10 overlaps at least partially with the orthographic projection of the filter structure 100 on the first substrate 10, that is, the microwave signal coupled and fed by the first opening 211 first enters the filter structure 100, and the filter structure 100 is configured to filter the radio frequency signal fed from the first opening 211. By setting the filter structure 100, the frequency of the input electromagnetic wave can be selected, and the electromagnetic waves in the target frequency band and below the target frequency band can be effectively blocked, thereby reducing noise and improving the signal-to-noise ratio of the antenna.

[0068] In some embodiments, the filter structure 100 includes but is not limited to a microstrip filter structure, which includes a plurality of resonant units. By selecting a microstrip filter structure, the space occupied by the filter structure in the liquid crystal phase shifter is reduced, thereby reducing the volume of the liquid crystal phase shifter. Two microstrip filter structures are given below for illustration.

[0069] Figure 5 A schematic diagram of a microstrip filter structure provided in an embodiment of the present disclosure is shown in FIG. Figure 5 As shown, the microstrip filter structure includes a dielectric substrate (not shown in the figure), and a first resonance unit 51, a second resonance unit 52, a third resonance unit 53, a fourth resonance unit 54 and a fifth resonance unit 55 located on the dielectric substrate, and a grounding layer (not shown in the figure) located on the side of the dielectric substrate away from each resonance unit.

[0070] Specifically, Figure 5As shown, the second resonant unit 52, the third resonant unit 53, and the fourth resonant unit 54 are all U-shaped microstrip line structures, and the first resonant unit 51 and the fifth resonant unit 55 are both strip-shaped microstrip line structures. Among them, the first resonant unit 51 and the fifth resonant unit 55, as well as the second resonant unit 52 and the fourth resonant unit 54, are symmetrically arranged with the third resonant unit 53 as the center. The opening directions of the U-shaped microstrip line structure of the second resonant unit 52 and the U-shaped microstrip line structure of the fourth resonant unit 54 are the same. The opening direction of the U-shaped microstrip line structure of the third resonant unit 53 is opposite to the opening direction of the U-shaped microstrip line structure of the second resonant unit 52, and the opening direction of the U-shaped microstrip line structure of the third resonant unit 53 is also opposite to the opening direction of the U-shaped microstrip line structure of the fourth resonant unit 54. In this embodiment, the filtering function is realized by the mutual coupling between two adjacent resonant units.

[0071] Continue to refer to Figure 5 , the microstrip filtering structure further includes a first connection unit 56 and a second connection unit 57. The first connection unit 56 is electrically connected to the first resonant unit 51, and the second connection unit 57 is electrically connected to the fifth resonant unit 55.

[0072] Among them, the first connection unit 56 can be used as the input end of the microstrip filtering structure or the output end of the microstrip filtering structure; when the first connection unit 56 can be used as the input end of the microstrip filtering structure, the second connection unit 57 is the output end of the microstrip filtering structure; when the first connection unit 56 can be used as the output end of the microstrip filtering structure, the second connection unit 57 is the input end of the microstrip filtering structure.

[0073] It should be noted that the electrical connection can be a contact electrical connection or a coupled electrical connection. In this embodiment, the electrical connection is taken as an example of a coupled connection for description.

[0074] As Figure 7 shown in the phase shifter structure, the first connection unit 56 is the input end of the microstrip filtering structure 100, and the second connection unit 57 is the output end of the microstrip filtering structure 100. Among them, the first connection unit 56 is located at the first opening 211, and the microstrip filtering structure 100 is connected to the transmission line 11b through the second connection unit 57.

[0075] As Figure 8 shown in the phase shifter structure, the first connection unit 56 is the output end of the microstrip filtering structure 100, and the second connection unit 57 is the input end of the microstrip filtering structure 100. Among them, the second connection unit 57 is located at the first opening 211, and the microstrip filtering structure 100 is connected to the transmission line 11b through the first connection unit 56.

[0076] In the above embodiment, the electromagnetic wave in the 11 GHz frequency band is used as the target frequency band. After testing, the embodiment of the present disclosure provides Figure 7 and Figure 8 The phase shifter shown can have good frequency selectivity for the electromagnetic waves in the above-mentioned 11 GHz frequency band and below, and can effectively block the electromagnetic waves in the 11 GHz frequency band and below, with a signal loss of -10dB to -70dB. Therefore, by setting a microstrip filtering structure in the liquid crystal phase shifter, the noise is reduced and the signal-to-noise ratio of the antenna is improved.

[0077] It should be noted that the material and specific size of the dielectric substrate can be set according to the number of resonant units, and are no longer limited here. The resonant unit can be made of a metal material or a non-metallic material with good electrical conductivity, which can block electromagnetic waves in non-target frequency bands and transmit electromagnetic waves in target frequency bands to ensure good communication quality. It is understandable that the frequency band of electromagnetic waves blocked by the microstrip filter structure as a whole can be adjusted by adjusting the size of the resonant unit and the spacing between each resonant unit.

[0078] It should be noted that those skilled in the art can also select relevant parameters of the resonance unit according to actual conditions, for example: the line width can be selected in the range of 100um-300um, the spacing between the resonance units can be in the range of 20um-2mm, and the thickness of the microstrip line can be in the range of 0.1um-100um. Of course, other ranges of line width, spacing and microstrip line thickness can also be selected, which will not be explained one by one here.

[0079] Figure 6 A schematic diagram of another microstrip filter structure provided in an embodiment of the present disclosure is shown in FIG. Figure 6 As shown, the microstrip filtering structure includes a dielectric substrate (not shown in the figure), and a sixth resonance unit 61, a seventh resonance unit 62, an eighth resonance unit 63 and a ninth resonance unit 64 located on the dielectric substrate, and a grounding layer (not shown in the figure) located on the side of the dielectric substrate away from each resonance unit.

[0080] Specifically, Figure 6 As shown, the sixth resonant unit 61, the seventh resonant unit 62, the eighth resonant unit 63 and the ninth resonant unit 64 are all strip microstrip line structures, the sixth resonant unit 61, the seventh resonant unit 62, the eighth resonant unit 63 and the ninth resonant unit 6 are arranged in parallel with each other, and two adjacent resonant units are coupled to each other. Figure 6, the sixth resonance unit 61 includes a first sub-resonance unit 611 and a second sub-resonance unit 612, and the width of the first sub-resonance unit 611 is greater than that of the second sub-resonance unit 612; the seventh resonance unit 62 includes a third sub-resonance unit 621 and a fourth sub-resonance unit 622, and the width of the third sub-resonance unit 621 is less than that of the fourth sub-resonance unit 622; the eighth resonance unit 63 includes a fifth sub-resonance unit 631 and a sixth sub-resonance unit 632, and the width of the fifth sub-resonance unit 631 is greater than that of the sixth sub-resonance unit 632; the ninth resonance unit 64 includes a seventh sub-resonance unit 641 and an eighth sub-resonance unit 642, and the width of the seventh sub-resonance unit 641 is less than that of the eighth sub-resonance unit 642. In this embodiment, the filtering function is realized by the mutual coupling between two adjacent resonance units.

[0081] Continuing to refer to Figure 6 , the microstrip filtering structure further includes a third connection unit 65 and a fourth connection unit 66. The third connection unit 65 is coupled to the sixth resonance unit 61, and the fourth connection unit 66 is coupled to the ninth resonance unit 64.

[0082] It should be noted that the electrical connection can be a direct electrical connection in contact or a coupled electrical connection. In this embodiment, the electrical connection is taken as an example of a coupled connection for illustration.

[0083] Among them, the third connection unit 65 can be used as the input end of the microstrip filtering structure or the output end of the microstrip filtering structure; when the third connection unit 65 is used as the input end of the microstrip filtering structure, the fourth connection unit 66 is the output end of the microstrip filtering structure; when the third connection unit 65 is used as the output end of the microstrip filtering structure, the fourth connection unit 66 is the input end of the microstrip filtering structure.

[0084] As Figure 9 shown in the phase shifter structure, the third connection unit 65 is the input end of the microstrip filtering structure 100, and the fourth connection unit 66 is the output end of the microstrip filtering structure 100. Among them, the third connection unit 65 is located at the first opening 211, and the microstrip filtering structure 100 is connected to the transmission line 11b through the fourth connection unit 66.

[0085] As Figure 10 shown in the phase shifter structure, the third connection unit 65 is the output end of the microstrip filtering structure 100, and the fourth connection unit 66 is the input end of the microstrip filtering structure 100. Among them, the fourth connection unit 66 is located at the first opening 211, and the microstrip filtering structure 100 is connected to the transmission line 1b1 through the third connection unit 65.

[0086] In this embodiment, taking the electromagnetic wave in the 11 GHz frequency band as the target frequency band, after testing, the present disclosure provides as Figure 9and Figure 10 The phase shifter shown can have good frequency selectivity for electromagnetic waves in the 11 GHz frequency band and below, can effectively block electromagnetic waves in the 11 GHz frequency band and below, and the signal loss is -10 dB to -70 dB. Therefore, by setting the above-mentioned microstrip filter structure in the liquid crystal phase shifter, the noise can be reduced and the signal-to-noise ratio of the antenna can be improved.

[0087] It should be noted that those skilled in the art can also select relevant parameters of the resonant unit according to the actual situation. For example, the optional range of the line width is 500 um - 2000 um, the range of the distance between the resonant units is 50 um - 1 mm, and the range of the thickness of the microstrip line is 0.1 um - 100 um. Of course, other ranges of line width, distance, and microstrip line thickness can also be selected, and no further examples will be given here.

[0088] It can be understood that only the Figure 5 and Figure 6 two microstrip filter structures shown are taken as examples for illustration. Of course, the microstrip filter structure can also be in any form, and those skilled in the art can also select the number of resonant units according to the actual situation, and no further examples will be given here. In some embodiments, the microstrip filter structure 100 is disposed on the same layer as the transmission line 11 and has the same material. In this embodiment, since the microstrip filter structure 100 is disposed on the same layer as the transmission line 111 and has the same material, the production steps can be reduced, and thus the production cost can be reduced.

[0089] In some embodiments, as shown in Figure 1 and 2 the positive projection of the first opening 211 of the grounding electrode 21 on the first substrate 10 does not overlap with the positive projection of at least one meandering line on the first substrate 10. For example, the positive projection of the first opening 211 of the grounding electrode 21 on the first substrate 10 does not overlap with the projections of the meandering lines on the first substrate 10, thereby avoiding the loss of microwave signals.

[0090] In some embodiments, as shown in Figure 11 the grounding electrode 21 further includes a second opening 213, the positive projection of the second opening 213 on the first substrate 10 does not overlap with the positive projection of the first opening 211 on the first substrate 10, and the positive projection of the first transmission end 11a on the first substrate 10 at least partially overlaps with the positive projection of the second opening 213 on the first substrate 10.

[0091] In some embodiments, as shown in Figure 11 - 12As shown, the phase shifter has a microwave transmission region and a peripheral region surrounding the microwave transmission region. The phase shifter includes a first substrate and a second substrate disposed opposite to each other, and a liquid crystal layer 30 disposed between the first substrate and the second substrate and located in the microwave transmission region; and in the liquid crystal phase shifter of the embodiment of the present disclosure, a first waveguide structure 60 and a second waveguide structure 70 located in the microwave transmission region are further included; wherein, the first waveguide structure 60 is located on a side of the first substrate facing away from the liquid crystal layer 30, and the second waveguide structure 70 is located on a side of the second substrate facing away from the liquid crystal layer 30. The first substrate and the second substrate in the embodiment of the present disclosure may be the same as the Figure 1 structures of the first substrate and the second substrate of the liquid crystal phase shifter in, that is, the first substrate includes a first substrate 10, a transmission line 11, a bias line 12, and a first alignment layer 13 disposed on the first substrate 10, and the second substrate includes a second substrate 20, a ground electrode 21 and a second alignment layer disposed on the second substrate 20. Wherein, the first waveguide structure 60 is configured to transmit a microwave signal in a coupled manner with a first transmission end 11a of the transmission line 11; the second waveguide structure 70 is configured to transmit a microwave signal in a coupled manner with a second transmission end 11b of the transmission line 11 through a first opening 211 on the ground electrode 21.

[0092] Specifically, when the second transmission end 11b of the transmission line 11 is used as a receiving end and the first transmission end 11a is used as a sending end, the second waveguide structure 70 transmits the microwave signal to the second transmission end 11b of the transmission line 11 in a coupled manner. At this time, the microwave signal is transmitted between the transmission line 11 and the ground electrode 21. Since a DC bias voltage is applied to the bias line 12, a DC steady-state electric field is formed between the transmission line 11 and the ground electrode 21 at this time, so that the liquid crystal molecules are deflected and the dielectric constant of the liquid crystal layer 30 changes. In this way, the microwave signal is transmitted between the transmission line 11 and the ground electrode 21, and since the dielectric constant of the liquid crystal layer 30 changes, the phase of the microwave signal will change accordingly. After the microwave signal is phase-shifted, it passes through the first transmission end 11a of the transmission line 11 and is coupled to the first waveguide structure 60 through a second opening 213 on the ground electrode 21, and the phase-shifted microwave signal is radiated out of the phase shifter.

[0093] In some embodiments, the first waveguide structure 60 and the second waveguide structure 70 may be disposed on opposite sides, that is, the first waveguide structure 60 is disposed on a side of the first substrate 10 facing away from the liquid crystal layer 30, and the second waveguide structure 70 is disposed on a side of the second substrate 20 facing away from the liquid crystal layer 30. In this case, the orthographic projection of the first waveguide structure 60 on the second substrate 20 does not overlap with the orthographic projection of the second waveguide structure 70 on the second substrate 20, so as to ensure that the structures of the first waveguide structure 60 and the second waveguide structure 70 are independent of each other and do not affect each other.

[0094] In one example, the first port of the second waveguide structure 70 can completely overlap with the first opening 211 on the ground electrode 21 to accurately transmit microwave signals. Of course, in the embodiments of the present disclosure, it can also be that the first port of the second waveguide structure 70 is orthogonally projected onto the second substrate 20, covering the orthogonally projected area of the first opening 211 on the ground electrode 21 onto the second substrate 20. In this case, the area of the first opening 211 on the ground electrode 21 is smaller than the area of the first port of the second waveguide structure 70.

[0095] In some examples, continue to refer to Figure 11 , the extending direction of the orthogonally projected area of the first transmission end 11a of the transmission line 11 onto the first substrate 10 passes through the center of the orthogonally projected area of the first port of the first waveguide structure 60 onto the first substrate 10. For example: the first transmission end 11a of the transmission line 11 extends in the Y direction and passes through the center of the first port of the first waveguide structure 60. Among them, when the first port of the first waveguide structure 60 is a rectangular first opening 211, the center of the first port of the first waveguide structure 60 refers to the intersection of the two diagonals of the first port. When the first port of the first waveguide structure 60 is circular, the center of the first port of the first waveguide structure 60 refers to the center of the circle of the first port. In this case, the orthogonally projected area of the first transmission end 11a of the transmission line 11 onto the first substrate 10 is inserted into the first port of the first waveguide structure 60. In this way, it helps the microwave signal output from the first port of the first waveguide structure 60 to radiate to the first transmission end 11a of the transmission line 11, so that the microwave signal is transmitted between the transmission line 11 and the ground electrode 21. Correspondingly, in the embodiments of the present disclosure, the extending direction of the orthogonally projected area of the second transmission end 11b of the transmission line 11 onto the second substrate 20 passes through the center of the orthogonally projected area of the first port of the second waveguide structure 70 onto the first substrate 10. For example: the second transmission end 11b of the transmission line 11 extends along the Y direction and passes through the center of the first port of the second waveguide structure 70. In this case, the orthogonally projected area of the second transmission end 11b of the transmission line 11 onto the second substrate 20 is inserted into the first port of the second waveguide structure 70. In this way, the microwave signal is coupled to the second waveguide structure 70 through the second transmission end 11b of the delay line to radiate the microwave signal out of the phase shifter.

[0096] In some embodiments, Figure 13Schematic diagram of a first waveguide structure 60 according to an embodiment of the present disclosure. The first waveguide structure 60 may include four sidewalls, namely a first sidewall 60a, a second sidewall 60b, a third sidewall 60c, and a fourth sidewall 60d. The first sidewall 60a and the second sidewall 60b are arranged opposite to each other, and the third sidewall 60c and the fourth sidewall 60d are arranged opposite to each other. The four sidewalls are connected to enclose a rectangular waveguide cavity 601, so the first waveguide structure 60 is a rectangular waveguide. It should be noted that at the second port of the first waveguide structure 60, there may be a bottom surface 60e, the bottom surface 60e covers the entire second port, and the bottom surface 60e has an opening 0601. The opening 601 is matched with one end of a signal connector. The signal connector is inserted into the first waveguide structure 60 through the opening, and the other end is connected to an external signal line to input a signal into the first waveguide structure 60. Of course, the second port of the second waveguide structure 70 may also be provided on any one of the sidewalls, that is, the opening 0601 may be formed on any one of the first sidewall 60a, the second sidewall 60b, the third sidewall 60c, and the fourth sidewall 60d, which is not limited in the embodiments of the present disclosure.

[0097] The structure of the second waveguide structure 70 is the same as that of the first waveguide structure 60. If the second waveguide structure 70 has only one sidewall, the second waveguide structure 70 is a circular waveguide structure. If the second waveguide structure 70 includes multiple sidewalls, the multiple sidewalls enclose a second waveguide structure 70 with a corresponding shape. Hereinafter, the first waveguide structure 60 and the second waveguide structure 70 are taken as rectangular waveguides as an example for illustration, which is not limited herein.

[0098] In some embodiments, as Figure 11 - 13 shown, the first port of the first waveguide structure 60 is fixed on the side of the first substrate 10 away from the liquid crystal layer 30, and the orthographic projection of the first port of the first waveguide structure 60 and the first transmission end 11a of the transmission line 11 on the first substrate 10 overlaps, so that the microwave signal can be transmitted between the first waveguide structure 60 and the first transmission end 11a of the transmission line 11 in a coupling manner; and / or, the first port of the second waveguide structure 70 is fixed on the side of the first substrate 10 away from the liquid crystal layer 30, and the orthographic projection of the first port of the second waveguide structure 70, the first opening 211 on the ground electrode 21, and the second transmission end 11b of the transmission line 11 on the second substrate 20 overlaps, so that the microwave signal can be transmitted between the second waveguide structure 70 and the second transmission end 11b of the transmission line 11 in a coupling manner. In some embodiments, as Figure 14 shown, the phase shifter has a microwave transmission region and a peripheral region surrounding the microwave transmission region. The second substrate further includes an isolation structure 80 provided on the second substrate 20. The isolation structure 80 is located in the peripheral region and surrounds the microwave transmission region. In the embodiments of the present disclosure, by providing the isolation structure 80, external radio frequency signals are prevented from interfering with the microwave signals transmitted in the microwave transmission region.

[0099] In some embodiments, referring to Figure 15 , the isolation structure 80 adopts a closed-loop structure. The isolation structure 80 is located on the side of the ground electrode 21 facing away from the liquid crystal layer 30, and the ground electrode 21 overlaps with the isolation structure 80, that is, the isolation structure 80 and the ground electrode 21 are short-circuited together. Wherein, a slot 212 is provided at the side of the ground electrode 21, and at least a part of the slot 212 overlaps with the isolation structure 80 on the second substrate 20. In this way, the position corresponding to the slot 212 of the isolation structure 80 can be bound to the second connection pad on the second wiring board to provide a ground signal for the ground electrode 21 and the isolation structure 80.

[0100] For example: the contour of the ground electrode 21 is rectangular, which has a first side, a second side, a third side, and a fourth side connected in sequence. At this time, the slot 212 can be formed on any one of the first side (left), the second side (top), the third side (right), and the fourth side (bottom). In Figure 15 , taking the slot 212 formed on the third side as an example.

[0101] In some embodiments, the ground electrode 21 is made of a metal material, such as any one of copper, aluminum, gold, and silver. The thickness of the ground electrode 21 is about 01.μm - 100μm. Specific parameters such as the specific material and thickness of the ground electrode 21 can be specifically set according to the size and performance requirements of the phase shifter. In some examples, the phase shifter not only includes the above structure, but also includes a support structure 40, a sealing adhesive 50 and other structures; wherein, the sealing adhesive 50 is disposed between the first substrate and the second substrate, is located in the peripheral area, and surrounds the microwave transmission area, and is used to seal the liquid crystal cell of the phase shifter; the support structure 40 is disposed between the first substrate and the second substrate, and the number thereof can be multiple, and each support structure 40 is spaced apart in the microwave transmission area to maintain the cell thickness of the liquid crystal cell.

[0102] In some examples, the support structure 40 in the embodiments of the present disclosure can be prepared from an organic material and has a certain elasticity, so as to prevent the first substrate 10 and the second substrate 20 from being damaged under the action of external force when the phase shifter is squeezed. Further, appropriate spherical particles can be added to the support structure 40 to ensure the stability of the support structure 40 when maintaining the cell thickness.

[0103] In some examples, the bias line 12 is made of a high-resistance material. When a DC bias voltage is applied to the bias line 12, the electric field formed between it and the ground electrode 21 is only used to drive the deflection of the liquid crystal molecules in the liquid crystal layer 30. For the microwave signal transmitted by the phase shifter, it is equivalent to an open circuit. That is to say, the microwave signal only travels along the transmission line 11. Among them, the conductivity of the bias line 1224 is less than 14500000 siemens / m (Siemens per meter), and it is better to select a bias line 12 with a lower conductivity value according to the size of the phase shifter, etc. In some examples, the material of the bias line 12 includes, but is not limited to, any one of indium tin oxide (ITO), nickel (Ni), tantalum nitride (TaN), chromium (Cr), indium oxide (In2O3), and tin oxide (Sn2O3). Preferably, the bias line 12 is made of ITO material.

[0104] In some examples, the transmission line 11 is made of a metal material. Specifically, the material of the transmission line 11 includes, but is not limited to, metals such as aluminum, silver, gold, chromium, molybdenum, nickel, or iron. The line pitch of the transmission line 11 refers to the distance from a point on the transmission line 11 that has a normal line and the normal line intersects with other parts of the transmission line 11 to the nearest intersection point of the normal line and the other parts of the transmission line 11, that is, as Figure 8 shown, d1 represents the line pitch of the transmission line 11. In some examples, the line width of the transmission line 11 is about 100 μm - 3000 μm, the line pitch of the transmission line 11 is about 100 μm - 2 mm, and the thickness of the transmission line 11 is about 0.1 μm - 100 μm.

[0105] In some examples, the transmission line 11 is a delay line, and the corner of the delay line is not equal to 90°, so as to avoid the reflection of the microwave signal at the corner position of the delay line, resulting in the loss of the microwave signal.

[0106] In some examples, the first substrate 10 can be made of a variety of materials. For example, if the first substrate 10 is a flexible substrate, the material of the first substrate 10 can include at least one of polyethylene glycol terephthalate (PET) and polyimide (PI). If the first substrate 1011 is a rigid substrate, the material of the first substrate 10 can also be glass or the like. The thickness of the first substrate 10 can be about 0.1 mm - 1.5 mm. The second substrate 20 can also be made of a variety of materials. For example, if the second substrate 20 is a flexible substrate, the material of the second substrate 20 can include at least one of polyethylene glycol terephthalate (PET) and polyimide (PI). If the second substrate 20 is a rigid substrate, the material of the second substrate 20 can also be glass or the like. The thickness of the second substrate 20 can be about 0.1 mm - 1.5 mm. Of course, the materials of the first substrate 10 and the second substrate 20 can also be other materials, which are not limited herein. The specific thicknesses of the first substrate 10 and the second substrate 20 can also be set according to the skin depth of the electromagnetic wave (radio frequency signal).

[0107] In some examples, the thickness of the liquid crystal layer 30 is about 1 μm - 1 mm. Of course, the thickness of the liquid crystal layer 30 can be specifically set according to the requirements of the size and phase shift angle of the phase shifter. In addition, the microwave liquid crystal material is selected for the liquid crystal layer 30 in the embodiments of the present disclosure. For example, the liquid crystal molecules in the liquid crystal layer 30 are positive liquid crystal molecules or negative liquid crystal molecules. It should be noted that when the liquid crystal molecules are positive liquid crystal molecules, the included angle between the long axis direction of the liquid crystal molecules in the embodiments of the present disclosure and the second electrode is greater than 0° and less than or equal to 45°. When the liquid crystal molecules are negative liquid crystal molecules, the included angle between the long axis direction of the liquid crystal molecules in the specific embodiments of the present invention and the second electrode is greater than 45° and less than 90°, ensuring that after the liquid crystal molecules are deflected, the dielectric constant of the liquid crystal layer 30 is changed to achieve the purpose of phase shift.

[0108] In some examples, both the first alignment layer and the second alignment layer can be prepared from polyimide-based materials. The thicknesses of the first alignment layer and the second alignment layer are about 30 nm - 2 μm. In a second aspect, the embodiments of the present disclosure provide a method for manufacturing a phase shifter, and this method can manufacture the above-mentioned phase shifter. The method includes the following steps.

[0109] S1. Prepare the first substrate.

[0110] S2. Prepare the second substrate.

[0111] S3. Align the first substrate and the second substrate, and pour liquid crystal molecules between the first substrate and the second substrate to form a liquid crystal layer.

[0112] S4. Assemble a first waveguide structure on a side of the first substrate facing away from the liquid crystal layer, and assemble a second waveguide structure on a side of the second substrate facing away from the liquid crystal layer.

[0113] In some examples, step S1 specifically includes the following steps.

[0114] S11. Form a pattern including a bias line on the first substrate through a patterning process.

[0115] Specifically, clean and dry the first substrate, and deposit a first high-resistance material layer on the first substrate by magnetron sputtering. For example, coat a layer of ITO material. After coating, pre-bake, expose, develop, post-bake, dry or wet etch, and anneal and crystallize the first high-resistance material layer, a pattern including a bias line is formed.

[0116] S12. On the first substrate with the bias line formed thereon, form a pattern including a transmission line and a microstrip filter structure through a patterning process.

[0117] Specifically, clean and dry the first substrate with the bias line formed thereon, and deposit a first metal material layer on the layer where the bias line is located and facing away from the first substrate by magnetron sputtering. For example, coat a layer of aluminum material. After coating, pre-bake, expose, develop, post-bake, dry or wet etch the first metal material layer, a pattern including a transmission line and a microstrip filter structure is formed.

[0118] S13. Form a first alignment layer on the first substrate with the transmission line formed thereon.

[0119] Specifically, clean and dry the first substrate with the transmission line formed thereon, print PI solution, then heat to evaporate the solvent, thermally cure, and perform rubbing or photo-alignment to form the first alignment layer.

[0120] S14. On the first substrate with the first alignment layer formed thereon, form a pattern including a support structure through a patterning process.

[0121] Specifically, form a layer of glue on the side of the first alignment layer facing away from the first substrate by spin coating or spraying, pre-bake, expose, develop, post-bake, to form a pattern including a support structure. Additionally, spherical particles can be sprayed into the glue layer.

[0122] Thus, the preparation of the first substrate is completed.

[0123] In some examples, step S2 specifically includes the following steps.

[0124] S21. Form a pattern including an isolation structure on the second substrate through a patterning process.

[0125] Specifically, clean and dry the second substrate, and deposit a second high-resistance material layer on the second substrate by magnetron sputtering, such as coating a layer of ITO material. After coating, pre-baking, exposure, development, post-baking, dry or wet etching, and annealing crystallization on the second high-resistance material layer, an image including an isolation structure is formed.

[0126] S22. Form a pattern including a ground electrode on the substrate with the isolation structure formed thereon through a patterning process.

[0127] Specifically, clean and dry the second substrate with the isolation structure formed thereon, and deposit a second metal material layer on the layer where the isolation structure is located and facing away from the first substrate by magnetron sputtering, such as coating a layer of aluminum material. After coating, pre-baking, exposure, development, post-baking, dry or wet etching on the second metal material layer, an image including a ground electrode is formed.

[0128] S23. Form a second alignment layer on the second substrate with the transmission line formed thereon.

[0129] Specifically, clean and dry the second substrate with the ground electrode formed thereon, print the PI solution, then heat to evaporate the solvent, and perform thermal curing, rubbing or photo-alignment to form the second alignment layer.

[0130] Thus, the preparation of the second substrate is completed.

[0131] In some examples, step S3 may specifically include the following steps.

[0132] S31. Form a sealing glue on the first substrate and form a liquid crystal layer on the second substrate.

[0133] Specifically, form a sealing glue in the peripheral area of the first alignment layer of the first substrate; drop liquid crystal molecules on the second alignment layer of the second substrate to form a liquid crystal layer. It should be noted that a sealing glue can also be formed in the peripheral area of the second alignment layer of the second substrate, and liquid crystal molecules can be dropped on the first alignment layer of the first substrate to form a liquid crystal layer.

[0134] S32. Oppositely bond the first substrate with the sealing glue formed thereon and the second substrate with the liquid crystal layer formed thereon.

[0135] Specifically, transfer the first substrate with the sealing glue formed thereon and the second substrate with the liquid crystal layer formed thereon to a vacuum bonding chamber for alignment and vacuum pressing, and then form a liquid crystal cell through ultraviolet curing and thermal curing.

[0136] In addition, step S3 can be implemented not only by the above-mentioned S31 and S32. Step S3 can also be implemented in the following manner. The prepared first substrate and the second substrate are aligned, and a certain space is supported between the first substrate and the second substrate by using a sealant to form a liquid crystal layer, and a liquid crystal injection port is reserved on the sealant. Liquid crystal molecules are injected between the first substrate and the second substrate through the liquid crystal injection port to form a liquid crystal layer, and then the liquid crystal injection port is sealed to form a liquid crystal cell.

[0137] Of course, after forming the liquid crystal cell, a cutting step may also be included to expose the position of the first substrate corresponding to the bias line, so that the first wiring board can be bonded to the bias line through the first connection pad to provide a DC bias voltage for the transmission line. Correspondingly, a partial position of the second substrate corresponding to the isolation structure is exposed, so that the second wiring board is bonded to the isolation structure through the second connection pad to provide a grounding signal for the grounding electrode.

[0138] In some examples, step S4 may specifically include: machining a metal copper or aluminum ingot by means of computer numerical control (CNC) machining to obtain a hollow waveguide structure member, that is, forming a first waveguide structure and a second waveguide structure. Then, the inner walls of the first waveguide structure and the second waveguide structure can be electroplated with a thin gold layer to prevent oxidation, that is, a protective layer is formed on the inner walls of the first waveguide structure and the second waveguide structure. Finally, the formed first waveguide structure is fixed on one side of the first substrate facing away from the liquid crystal layer, and the formed second waveguide structure is fixed on one side of the second substrate facing away from the liquid crystal layer.

[0139] In a third aspect, an embodiment of the present disclosure provides an antenna, which can be a receiving antenna or a transmitting antenna.

[0140] In the embodiment of the present disclosure, taking this antenna as a receiving antenna as an example for illustration. The antenna includes any one of the above-mentioned phase shifters, and a patch electrode is disposed on one side of the first substrate facing away from the grounding electrode, and a first opening is provided at a position corresponding to the grounding electrode and the patch electrode. The patch electrode is used to feed a microwave signal into the liquid crystal layer of the phase shifter through the first opening of the grounding electrode. In addition, in the embodiment of the present disclosure, a plurality of antennas arranged in an array form a phased array antenna.

[0141] It can be understood that the above embodiments are merely exemplary embodiments adopted to illustrate the principles of the present disclosure, and the present disclosure is not limited thereto. For those of ordinary skill in the art, various modifications and improvements can be made without departing from the spirit and essence of the present disclosure, and these modifications and improvements are also regarded as the protection scope of the present disclosure.

Claims

1. A phase shifter, characterized in that, Comprising: A first substrate and a second substrate which are oppositely arranged, and a dielectric layer located between the first substrate and the second substrate; The first substrate includes: a first base, and a transmission line located on a side of the first base close to the dielectric layer, the transmission line having a first transmission end, a second transmission end, and a transmission main body; The second substrate includes: a second base, and a reference electrode located on a side of the second base close to the dielectric layer, and the reference electrode at least partially overlaps a positive projection of the transmission line on the first base, and a first opening is provided on the reference electrode; the first opening is used for radiating a microwave signal, and a length of the first opening in a first direction is not less than a line width of the transmission line; The phase shifter further includes: An auxiliary function structure, the auxiliary function structure is connected to the second transmission end of the transmission line, and a positive projection of the first opening on the first base and a positive projection of the auxiliary function structure on the first base at least partially overlap; the auxiliary function structure is a microstrip filter structure, and the microstrip filter structure includes a plurality of resonant units, and adjacent resonant units are coupled to each other; The microstrip filter structure includes a first resonant unit, a second resonant unit, a third resonant unit, a fourth resonant unit, and a fifth resonant unit; wherein, the first resonant unit and the fifth resonant unit have the same shape and are strip-shaped; the second resonant unit, the third resonant unit, and the fourth resonant unit have the same shape and are U-shaped, and opening directions of the second resonant unit and the fourth resonant unit are the same and are opposite to an opening direction of the third resonant unit.

2. The phase shifter according to claim 1, wherein The microstrip filter structure further includes: A first connection unit, the first connection unit is electrically connected to the first resonant unit; A second connection unit, the second connection unit is electrically connected to the fifth resonant unit.

3. The phase shifter according to claim 1, wherein The microstrip filter structure includes a sixth resonant unit, a seventh resonant unit, an eighth resonant unit, and a ninth resonant unit which are arranged in parallel; Wherein, The sixth resonant unit includes a first sub-resonant unit and a second sub-resonant unit, and a width of the first sub-resonant unit is greater than a width of the second sub-resonant unit; The seventh resonant unit includes a third sub-resonant unit and a fourth sub-resonant unit, and a width of the third sub-resonant unit is less than a width of the fourth sub-resonant unit; The eighth resonant unit includes a fifth sub-resonant unit and a sixth sub-resonant unit, and a width of the fifth sub-resonant unit is greater than a width of the sixth sub-resonant unit; The ninth resonant unit includes a seventh sub-resonant unit and an eighth sub-resonant unit, and a width of the seventh sub-resonant unit is less than a width of the eighth sub-resonant unit.

4. The phase shifter according to claim 3, characterized in that, It further includes: A third connection unit, the third connection unit is connected to the sixth resonant unit; A fourth connection unit, the fourth connection unit is connected to the ninth resonant unit.

5. The phase shifter according to claim 1, wherein, The microstrip filter structure is arranged on the same layer as the transmission line and has the same material.

6. The phase shifter according to claim 1, characterized in that, The transmission main body includes at least one meandering line electrically connected to the first transmission end and the second transmission end.

7. The phase shifter according to claim 6, characterized in that, The orthographic projection of the first opening on the first substrate does not overlap with the orthographic projection of the at least one meandering line on the first substrate.

8. The phase shifter according to claim 1, wherein The reference electrode further includes a second opening, the orthographic projection of the second opening on the first substrate does not overlap with the orthographic projection of the first opening on the first substrate, and the orthographic projection of the first transmission end on the first substrate at least partially overlaps with the orthographic projection of the second opening on the first substrate.

9. The phase shifter according to claim 8, characterized in that, The phase shifter further includes: a first waveguide structure and a second waveguide structure; the first waveguide structure is configured to transmit a microwave signal in a coupled manner through the second opening and the first transmission end of the transmission line; the second waveguide structure is configured to transmit a microwave signal in a coupled manner through the first opening and the second transmission end of the transmission line.

10. The phase shifter according to claim 9, wherein The first port of the first waveguide structure is disposed on a side of the first substrate away from the dielectric layer; the first port of the second waveguide is disposed on a side of the second substrate away from the dielectric layer; The extending direction of the orthographic projection of the first transmission end on the first substrate passes through the center of the orthographic projection of the first port of the first waveguide structure on the first substrate; and / or The extending direction of the orthographic projection of the second transmission end on the second substrate passes through the center of the orthographic projection of the first port of the second waveguide structure on the second substrate.

11. The phase shifter according to claim 10, characterized in that, The orthographic projection of the first port of the first waveguide structure on the first substrate completely overlaps with the orthographic projection of the second opening on the first substrate; The orthographic projection of the first port of the second waveguide structure on the second substrate completely overlaps with the orthographic projection of the first opening on the second substrate.

12. The phase shifter according to any one of claims 1-11, characterized in that, The phase shifter has a microwave transmission region and a peripheral region surrounding the microwave transmission region; the second substrate further includes an isolation structure disposed on the second substrate; the isolation structure is located in the peripheral region and surrounds the microwave transmission region.

13. The phase shifter according to claim 12, wherein, The isolation structure is located on a side of the reference electrode close to the second substrate, and the reference electrode extends to the peripheral region and overlaps with the isolation structure.

14. The phase shifter according to claim 13, wherein, The reference electrode has a slot, the slot is located in the peripheral region, and there is an overlap between the isolation structure and the orthographic projection of the slot on the second substrate.

15. The phase shifter according to claim 1, wherein The material of the dielectric layer includes liquid crystal.

16. An antenna, characterized in that, Comprising the phase shifter according to any one of claims 1-15.

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