Wafer processing equipment

Abstract

The present invention provides a wafer processing apparatus comprising a pressure assembly, a rotation mechanism, a control element, and a heat source. The pressure assembly comprises a first pressure head having a first working surface and a second pressure head having a second working surface. The rotation mechanism is connected to the pressure assembly. The control element is electrically connected to the rotation mechanism. The heat source is disposed adjacent to the pressure assembly. The wafer processing apparatus can adjust the angle between the first working surface of the first pressure head and the second working surface of the second pressure head and a reference plane to optimize the repair effect of wafer geometric defects.

Description

Technical Field

[0001] The invention relates to wafer processing equipment. Background Art

[0002] In the semiconductor industry, the materials of wafers include, for example, silicon (Si), gallium arsenide (GaAs), indium phosphide (InP), indium antimonide (InSb), gallium nitride (GaN), silicon carbide (SiC), or zinc selenide (ZnSe). Generally speaking, the method of manufacturing wafers includes first forming an ingot, and then slicing the ingot to obtain a wafer. The ingot is manufactured, for example, in a high-temperature environment. Currently, the growth methods of the ingot include the Czochralski process, physical vapor transport (PVT), high temperature chemical vapor deposition (HT-CVD), and liquid phase epitaxy (LPE).

[0003] A seed crystal is placed in a high-temperature furnace. It comes into contact with a gaseous or liquid feedstock, and semiconductor material forms on the surface of the seed crystal until a crystal ingot of the desired size is obtained. The ingot can have different crystalline structures depending on the manufacturing method and the raw materials used. For example, silicon carbide ingots include 3C-SiC, 4H-SiC, and 6H-SiC. 3C-SiC belongs to the cubic system, while 4H-SiC and 6H-SiC belong to the hexagonal system.

[0004] The ingot grows in a high-temperature environment ranging from hundreds to thousands of degrees Celsius. During the growth process, the end of the ingot closest to the seed crystal is called the seed end, and the end away from the seed crystal is called the dome end. Depending on their location, the seed end and the dome end may experience a temperature difference of tens to hundreds of degrees Celsius. In this case, residual stress may occur within the ingot due to the temperature difference. If the ingot is made of silicon carbide, for example, the seed end is the silicon surface and the dome end is the carbon surface, the silicon surface of the ingot will experience residual compressive stress, and the carbon surface of the ingot will experience residual tensile stress.

[0005] After the ingot is grown, it is cooled to room temperature by furnace cooling or other methods. When the ingot is cooled to below the plastic-elastic transition temperature, the ingot will have elastic deformation properties and can no longer release stress by plastic deformation (such as dislocation formation, slip and / or bonding). For example, the edge dislocation can slide along the slip direction on the corresponding slip plane to the crystal plane. When the ingot has elastic deformation properties, the thermal contraction of the ingot generally conforms to the following formula: ε = kΔΤ, where ε is the strain, k is the thermal expansion coefficient, and ΔΤ is the temperature difference. When cooling the ingot, if the temperature of the seed end is different from the temperature of the dome tip, the seed end and the dome tip will start to cool from different temperatures, resulting in a different degree of thermal contraction at the seed end and the dome tip. For example, the seed end may be cooled from 1800 degrees Celsius to 20 degrees Celsius, and the dome tip may be cooled from 1900 degrees Celsius to 20 degrees Celsius. This situation results in residual compressive stress and residual tensile stress in the ingot. In other words, because the ΔT at the seed end is different from the ΔT at the dome end, the ε at the seed end is different from the ε at the dome end.

[0006] After the ingot cools, a cutting machine removes the poorly shaped ends of the ingot. A grinding wheel is then used to grind the ingot to the desired size (e.g., 3 to 12 inches). In some processes, a flat edge or V-shaped groove is ground into the edge of the ingot. This flat edge or V-shaped groove can be used to mark the crystal orientation of the ingot or to secure the ingot in place.

[0007] The ingot is then sliced to obtain multiple wafers. For example, the method of slicing the ingot includes cutting with a knife or steel wire combined with abrasive particles (such as diamond particles). In some cases, the interior of the wafer has residual compressive and tensile stresses, just like the ingot. In some processes, the edges of the wafer are ground into radiused corners to prevent the edges of the wafer from breaking due to collisions.

[0008] Next, the wafer is subjected to a grinding and polishing process to improve the surface quality of the wafer. Methods for performing grinding and polishing processes on wafers include, for example, a physical grinding process and a chemical mechanical grinding process. The physical grinding process, for example, is to grind the wafer surface with a grinding liquid containing diamond particles or other particles with higher hardness in combination with a polishing pad. The physical grinding process mainly uses mechanical force to treat the wafer surface. The chemical mechanical grinding process is to grind the wafer surface with a corrosive grinding liquid and abrasive in combination with a polishing pad. The corrosive grinding liquid in the chemical mechanical grinding process can react chemically with the wafer surface, converting the uneven parts of the wafer surface into a material with lower hardness, thereby making it easier for the abrasive to remove the uneven parts of the wafer surface.

[0009] After the grinding and polishing processes, the wafer thickness is reduced (for example, by hundreds of microns). The residual tensile and compressive stresses within the wafer are partially released due to the reduction in wafer thickness, resulting in geometric defects such as bow and / or warp.

[0010] Therefore, how to repair the above-mentioned geometric defects after cutting or grinding of silicon carbide wafers is an important issue in the next-generation semiconductor material manufacturing process. Summary of the Invention

[0011] The invention provides a wafer processing device, which can effectively repair the geometric defects of the wafer through annealing treatment.

[0012] The wafer processing equipment of an embodiment of the present invention includes a pressure component, a rotating mechanism, a control element and a heat source. The pressure component includes a first pressure head and a second pressure head. The first pressure head has a first working surface. The second pressure head has a second working surface. The first pressure head and the second pressure head are suitable for being close to each other to clamp the wafer between the first working surface and the second working surface, and to apply pressure to the wafer along the pressure direction. The rotating mechanism is connected to the pressure component. The control element is suitable for causing the rotating mechanism to drive the first pressure head and the second pressure head to rotate so as to adjust the angle between the first working surface and the second working surface and the reference plane, wherein the normal direction of the reference plane is substantially parallel to the pressure direction. The heat source is suitable for heating the wafer clamped between the first working surface and the second working surface.

[0013] In an embodiment of the present invention, the heat source comprises a radio frequency coil surrounding the wafer.

[0014] In an embodiment of the present invention, the wafer processing equipment further includes a plurality of sacrificial layers respectively disposed on the first working surface and the second working surface to contact the wafer.

[0015] In an embodiment of the present invention, the wafer processing equipment further includes a temperature detector adapted to detect the instantaneous temperature of the wafer and electrically connected to the control element.

[0016] In an embodiment of the present invention, the control element is adapted to determine the rotation mechanism to drive the first pressing head and the second pressing head to rotate according to the difference between the instantaneous temperature of the wafer and the predetermined annealing temperature, so as to adjust the angle to a predetermined angle.

[0017] In an embodiment of the present invention, the control element is adapted to control the pressure applying component to apply a predetermined pressure to the wafer according to a difference between the instantaneous temperature of the wafer and the predetermined annealing temperature.

[0018] In an embodiment of the present invention, the control element is adapted to adjust the heating power of the heat source according to the instantaneous temperature of the wafer.

[0019] In an embodiment of the present invention, the above-mentioned wafer processing equipment also includes an angle detector, which is suitable for detecting the instantaneous angle of the above-mentioned angle and is electrically connected to a control element, wherein the control element is suitable for causing the rotating mechanism to drive the first pressure head and the second pressure head to rotate according to the instantaneous angle.

[0020] In an embodiment of the present invention, the above-mentioned wafer processing equipment also includes a pressure detector, which is suitable for detecting the instantaneous pressure applied by the first pressure head and the second pressure head to the wafer, and is electrically connected to a control element, wherein the control element is suitable for adjusting the pressure applied by the pressure component to the wafer according to the instantaneous pressure.

[0021] In an embodiment of the present invention, the control element is adapted to control the time during which the pressure-applying assembly applies pressure to the wafer.

[0022] In an embodiment of the present invention, the control element is adapted to control the rotation mechanism so that the angle is maintained for a predetermined period of time.

[0023] In an embodiment of the present invention, the pressure assembly further includes a first pressure shaft and a second pressure shaft. The first pressure shaft is connected to the first pressure head. The second pressure shaft is connected to the second pressure head. The axial directions of the first pressure shaft and the second pressure shaft are substantially parallel to the pressure application direction. The projection position of the first pressure shaft on the wafer is offset from the projection position of the second pressure shaft on the wafer.

[0024] In an embodiment of the present invention, the above-mentioned first pressure head has multiple upper pressure parts, and the second pressure head has multiple lower pressure parts. The multiple upper pressure parts are structurally separated from each other and correspond to multiple areas of the wafer respectively, and the multiple lower pressure parts are structurally separated from each other and correspond to multiple areas of the wafer respectively.

[0025] In an embodiment of the present invention, the plurality of regions of the wafer include a first region, a second region, and a third region, the geometric center of the wafer is located in the first region, the third region of the wafer has an edge of the wafer, and the second region is located between the first region and the third region. The plurality of upper pressurizing parts include a first upper pressurizing part, a second upper pressurizing part, and a third upper pressurizing part, corresponding to the first region, the second region, and the third region of the wafer, respectively. The plurality of lower pressurizing parts include a first lower pressurizing part, a second lower pressurizing part, and a third lower pressurizing part, corresponding to the first region, the second region, and the third region of the wafer, respectively. The first upper pressurizing part and the first lower pressurizing part are suitable for applying a first pressure to the first region of the wafer. The second upper pressurizing part and the second lower pressurizing part are suitable for applying a second pressure to the second region of the wafer. The third upper pressurizing part and the third lower pressurizing part are suitable for applying a third pressure to the third region of the wafer. The first pressure is greater than the second pressure, and the second pressure is greater than the third pressure.

[0026] A wafer processing apparatus according to an embodiment of the present invention includes a pressure assembly, a rotation mechanism, a control element, and a heat source. The pressure assembly includes a first pressure head having a first working surface and a second pressure head having a second working surface. The rotation mechanism is connected to the pressure assembly. The control element is electrically connected to the rotation mechanism. The heat source is disposed adjacent to the pressure assembly.

[0027] In an embodiment of the present invention, the heat source comprises a radio frequency coil.

[0028] In an embodiment of the present invention, the wafer processing equipment further includes a plurality of sacrificial layers respectively disposed on the first working surface and the second working surface.

[0029] In an embodiment of the present invention, the wafer processing equipment further includes a temperature detector electrically connected to the control element.

[0030] In an embodiment of the present invention, the wafer processing equipment further includes an angle detector electrically connected to the control element.

[0031] In an embodiment of the present invention, the wafer processing equipment further includes a pressure detector electrically connected to the control element.

[0032] In an embodiment of the present invention, the pressure assembly further comprises a first pressure shaft and a second pressure shaft. The first pressure shaft is connected to the first pressure head. The second pressure shaft is connected to the second pressure head. The first pressure shaft and the second pressure shaft are staggered.

[0033] In an embodiment of the present invention, the first pressure head has a plurality of upper pressure parts, and the second pressure head has a plurality of lower pressure parts. The plurality of upper pressure parts are structurally separated from each other, and the plurality of lower pressure parts are structurally separated from each other and respectively correspond to the plurality of upper pressure parts.

[0034] Based on the above, the wafer processing equipment of the embodiment of the present invention can use the first working surface of the first pressing head and the second working surface of the second pressing head to clamp the wafer, and can use a rotation mechanism to drive the first pressing head and the second pressing head to adjust the angle between the first working surface of the first pressing head and the second working surface of the second pressing head and the reference plane. In this way, the wafer processing equipment can adjust the angle between the first working surface of the first pressing head and the second working surface of the second pressing head and the reference plane at any time to achieve the best effect in repairing wafer geometric defects. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 is a schematic diagram of a wafer processing apparatus according to an embodiment of the present invention;

[0036] Figure 2 Shows a pressure component, a rotating mechanism, and a heat source of a wafer processing device according to an embodiment of the present invention;

[0037] Figure 3 A schematic diagram of a first pressing head of a wafer processing device according to another embodiment of the present invention;

[0038] Figure 4 shows a first surface of a wafer according to another embodiment of the present invention;

[0039] Figure 5 A schematic diagram of a second pressing head of a wafer processing device according to another embodiment of the present invention;

[0040] Figure 6 The second surface of the wafer according to another embodiment of the present invention is shown. DETAILED DESCRIPTION

[0041] Reference will now be made in detail to exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Whenever possible, the same reference numerals are used in the drawings and the description to refer to the same or like parts.

[0042] Figure 1 FIG. 1 is a schematic diagram of a wafer processing apparatus according to an embodiment of the present invention. Figure 2 The figure shows a pressure-applying assembly, a rotating mechanism, and a heat source of a wafer processing apparatus according to an embodiment of the present invention.

[0043] Please refer to Figure 1 and Figure 2 The wafer processing apparatus 10 includes a pressure assembly 110. The pressure assembly 110 includes a first pressure head 112 and a second pressure head 114. The first pressure head 112 has a first working surface 112a. The second pressure head 114 has a second working surface 114a. The first pressure head 112 and the second pressure head 114 are adapted to engage with each other to sandwich the wafer W between the first working surface 112a and the second working surface 114a, and to apply pressure to the wafer W along a pressure direction D1.

[0044] For example, in this embodiment, the pressure assembly 110 further includes a first pressure shaft 116 and a second pressure shaft 118, wherein the first pressure shaft 116 is connected to the first pressure head 112, and the second pressure shaft 118 is connected to the second pressure head 114. In this embodiment, the axial directions of the first pressure shaft 116 and the second pressure shaft 118 may be substantially parallel to the pressure direction D1, but the present invention is not limited thereto. In this embodiment, the pressure assembly 110 may be hydraulic, pneumatic, screw, or any other suitable type, and the present invention is not limited thereto.

[0045] The first pressure head 112 and the second pressure head 114 of the pressure assembly 110 are suitable for applying pressure to the wafer W to form a shear force on the wafer W. The shear force can effectively repair the geometric defects of the wafer W through annealing. Specifically, in this embodiment, when the pressure assembly 110 applies pressure to the wafer W, the first working surface 112a of the first pressure head 112 and the second working surface 114a of the second pressure head 114 have an angle θ with the reference plane RP (for example, a horizontal plane), wherein the normal direction N of the reference plane RP is substantially parallel to the pressure direction D1; thereby, when the first pressure shaft 116 and the second pressure shaft 118 drive the first pressure head 112 and the second pressure head 114 to apply pressure to the wafer W, the shear force can be formed on the wafer W.

[0046] For example, in this embodiment, the first pressure axis 116 and the second pressure axis 118 can be selectively staggered. Furthermore, when the pressure assembly 110 applies pressure to the wafer W, the projection of the first pressure axis 116 on the wafer W and the projection of the second pressure axis 118 on the wafer W can be selectively staggered. This increases the force applied by the pressure assembly 110 on the wafer W parallel to the surface Ws of the wafer W, such as the top and bottom surfaces, thereby increasing the shear force applied to the wafer W.

[0047] Please refer to Figure 1 Furthermore, in this embodiment, the wafer processing apparatus 10 may optionally include a sacrificial layer 182 and a sacrificial layer 184, respectively disposed on the first working surface 112a of the first pressing head 112 and the second working surface 114a of the second pressing head 114. The sacrificial layers 182 and 184 are used to contact the wafer W, preventing the wafer W from directly contacting the first pressing head 112 and the second pressing head 114 and causing unintended chemical reactions at high temperatures. The sacrificial layers 182 and 184 may be made of a multi-layer or single layer and may contain at least the same material as the wafer W. By directly contacting the wafer W with the sacrificial layers 182 and 184, which are made of the same material as the wafer W, unintended chemical reactions that could affect the quality of the wafer W can be avoided. For example, in this embodiment, if the wafer W is made of silicon carbide, the sacrificial layers 182 and 184 may be made of the same material as the wafer W, but the present invention is not limited thereto.

[0048] Please refer to Figure 1 and Figure 2 The wafer processing equipment 10 further includes a rotating mechanism 120 (shown in FIG. Figure 2 ), connected to the pressure component 110. The wafer processing equipment 10 also includes a control element 130 (shown in Figure 1) is electrically connected to the rotation mechanism 120. The control element 130 is adapted to cause the rotation mechanism 120 to drive the first pressing head 112 and the second pressing head 114 to rotate, thereby adjusting the angle θ between the first working surface 112a of the first pressing head 112 and the second working surface 114a of the second pressing head 114 and a reference plane RP (e.g., a horizontal plane). In other words, through the cooperation between the control element 130 and the rotation mechanism 120, the angle θ between the first working surface 112a of the first pressing head 112 and the second working surface 114a of the second pressing head 114 and the reference plane RP is adjustable.

[0049] Please refer to Figure 2 In this embodiment, the rotating mechanism 120 may include, for example, a first transverse portion 122, a second transverse portion 124, a third transverse portion 126, and a straight portion 128, wherein the middle sections of the first transverse portion 122 and the straight portion 128 are connected at a first connection C1, one end of the second transverse portion 124 and one end of the third transverse portion 126 are connected to the two ends of the straight portion 128 at a second connection C2 and a third connection C3, respectively, and the other end of the second transverse portion 124 and the other end of the third transverse portion 126 are connected to the first pressing head 112 and the second pressing head 114 at a fourth connection C4 and a fifth connection C5, respectively. The first connection C1, the second connection C2, the third connection C3, the fourth connection C4, and the fifth connection C5 are movable so that the rotating mechanism 120 can freely adjust the angle θ (indicated by Figure 1 ).

[0050] For example, in this embodiment, the rotation mechanism 120 may include a screw and a gear; however, the present invention is not limited thereto, and the rotation mechanism 120 may also include other components. Furthermore, it should be noted that the present invention does not limit the rotation mechanism 120 to including the aforementioned first transverse portion 122, second transverse portion 124, third transverse portion 126, and straight portion 128. In other embodiments, the rotation mechanism 120 may also employ other structures, as long as it can drive the first and second pressure heads 112, 114 to change the included angle θ.

[0051] Please refer to Figure 1 and Figure 2 The wafer processing apparatus 10 further includes a heat source 140 disposed adjacent to the pressure assembly 110. The heat source 140 is adapted to heat the wafer W sandwiched between the first working surface 112a of the first pressure head 112 and the second working surface 114a of the second pressure head 114. For example, in this embodiment, the heat source 140 may include a radio frequency coil (RF coil). When the heat source 140 heats the wafer W, the RF coil may surround the wafer W.

[0052] It is worth noting that the RF coil has the characteristics of localized heating and concentrated heating. In other words, the RF coil can heat the wafer W without excessively affecting the components arranged around it (for example, at least a portion of the pressure assembly 110 and / or at least a portion of the rotating mechanism 120). In this way, not only can the total heat output of the wafer processing equipment 10 be reduced, achieving the effect of saving electricity; the components arranged around the heat source 140 are also less likely to be damaged by heat, which helps to extend the service life of the wafer processing equipment 10; the components arranged around the heat source 140 do not need to use extremely heat-resistant materials, and there are many material options, which helps to reduce the procurement cost of the wafer processing equipment 10. In addition, the upper limit of the heating temperature of the RF coil is higher than that of traditional wafer furnaces, which helps the wafer processing equipment 10 repair various types of wafer W geometric defects.

[0053] Please refer to Figure 1 In this embodiment, the wafer processing apparatus 10 may further optionally include a temperature detector 150 electrically connected to the control unit 130. The temperature detector 150 is adapted to detect the instantaneous temperature of the wafer W. In this embodiment, the control unit 130 is adapted to adjust the heating power of the heat source 140 according to the instantaneous temperature of the wafer W measured by the temperature detector 150.

[0054] Please refer to Figure 1 In this embodiment, the control unit 130 is adapted to control the rotation mechanism 120 to rotate the first and second pressing heads 112, 114 based on the difference between the instantaneous temperature of the wafer W measured by the temperature detector 150 and the predetermined annealing temperature, thereby adjusting the angle θ to a predetermined angle. In this embodiment, the wafer processing apparatus 10 may further optionally include an angle detector 160 electrically connected to the control unit 130. The angle detector 160 is adapted to detect the instantaneous angle of the angle θ to determine whether the angle θ is adjusted to the predetermined angle. In this embodiment, the control unit 130 is further adapted to control the rotation mechanism 120 to maintain the predetermined angle θ. In this embodiment, the wafer processing apparatus 10 may further optionally include a pressure detector 170 electrically connected to the control unit 130. The pressure detector 170 is adapted to detect the instantaneous pressure applied to the wafer W by the first and second pressing heads 112, 114. The control unit 130 is adapted to adjust the pressure applied by the pressure assembly 110 to the wafer W based on the instantaneous pressure detected by the pressure detector 170. In this embodiment, the control unit 130 is further adapted to control the duration of the pressure application assembly 110 on the wafer W. The temperature sensor 150 , angle sensor 160 , and pressure sensor 170 can provide real-time feedback to the control unit 130 on the wafer W's current temperature, the angle θ, and the pressure applied to the wafer W, allowing the control unit 130 to adjust various parameters of the annealing process in a timely manner.

[0055] Please refer to Figure 1 and Figure 2 For example, in this embodiment, the annealing process performed by the wafer processing equipment 10 may include the following steps: first, the heat source 140 is controlled to heat the wafer W. When the temperature detector 150 detects that the difference between the instantaneous temperature of the wafer W and the predetermined annealing temperature is substantially zero, the control component 130 controls the rotation mechanism 120 to drive the first pressing head 112 and the second pressing head 114 to rotate to adjust the angle θ to a predetermined angle; then, when the difference between the instantaneous temperature of the wafer W and the predetermined annealing temperature is substantially zero, the control component 130 controls the pressure applying component 110 to start applying pressure to the wafer W so that the instantaneous pressure detected by the pressure detector 170 is substantially equal to the predetermined pressure, thereby completing the annealing process.

[0056] For example, in this embodiment, the heat source 140 can heat the wafer W to a temperature within a range of 1000°C to 2000°C. The rotation mechanism 120 can adjust the angle θ between the first working surface 112a of the first pressing head 112 and the second working surface 114a of the second pressing head 114 and the reference plane RP to a range of 0° to 45°. Preferably, the wafer W is placed flat and heated from room temperature to 1500°C. The rotation mechanism 120 drives the first pressing head 112 and the second pressing head 114 to adjust the angle θ between the first working surface 112a and the second working surface 114a and the reference plane RP to 25°. However, the present invention is not limited to this.

[0057] It is worth noting that during the annealing process performed by the wafer processing apparatus 10, the amount of pressure applied by the pressure assembly 110 to the wafer W, the duration of the pressure applied by the pressure assembly 110 to the wafer W, the heating temperature of the wafer W by the heat source 140, and / or the angle θ are adjustable. In other words, during the annealing process of the wafer W, the control unit 130 can adjust various annealing process parameters at any time to optimize the effectiveness of the wafer processing apparatus 10 in repairing geometric defects on the wafer W.

[0058] It should be noted that the following embodiments share the same component numbers and some of the contents of the previous embodiments, wherein the same reference numerals are used to represent the same or similar components, and the description of the same technical contents is omitted. For the description of the omitted parts, please refer to the previous embodiments, and the following embodiments will not be repeated.

[0059] Figure 3 Schematic diagram of a first pressure head of a wafer processing device according to another embodiment of the present invention. Figure 4 A first surface of a wafer according to another embodiment of the present invention is shown.

[0060] Figure 5 Schematic diagram of a second pressure head of a wafer processing device according to another embodiment of the present invention. Figure 6 The second surface of the wafer according to another embodiment of the present invention is shown.

[0061] Please refer to Figure 4 and Figure 6 The surface Ws of the wafer W includes a first surface Ws1 and a second surface Ws2 that are opposite to each other. Figure 3 and Figure 4 In this embodiment, the first pressing head 112A has a plurality of upper pressing parts 112A-1, 112A-2, and 112A-3. The plurality of upper pressing parts 112A-1, 112A-2, and 112A-3 are suitable for applying pressure to the wafer W from the first surface Ws1 of the wafer W. The plurality of upper pressing parts 112A-1, 112A-2, and 112A-3 are structurally separated from each other and correspond to the plurality of regions W-1, W-2, and W-3 of the wafer W, respectively. Please refer to Figure 5 and Figure 6 In this embodiment, the second pressure head 114A has multiple lower pressure parts 114A-1, 114A-2, and 114A-3. The multiple lower pressure parts 114A-1, 114A-2, and 114A-3 are suitable for applying pressure to the wafer W from the second surface Ws2. The multiple lower pressure parts 114A-1, 114A-2, and 114A-3 are structurally separated from each other and correspond to multiple areas W-1, W-2, and W-3 of the wafer W, respectively.

[0062] Please refer to Figure 4 and Figure 6 For example, in this embodiment, the plurality of regions W-1, W-2, and W-3 of the wafer W include a first region W-1, a second region W-2, and a third region W-3. The geometric center C of the wafer W is located in the first region W-1. The third region W-3 of the wafer W has an edge E of the wafer W. The second region W-2 is located between the first region W-1 and the third region W-3. Please refer to Figure 3 and Figure 4 The plurality of upper pressing parts 112A-1, 112A-2, and 112A-3 of the first pressing head 112A include a first upper pressing part 112A-1, a second upper pressing part 112A-2, and a third upper pressing part 112A-3, which correspond to the first area W-1, the second area W-2, and the third area W-3 of the wafer W, respectively; please refer to Figure 5 and Figure 6The multiple lower press parts 114A-1, 114A-2, and 114A-3 of the second press head 114A include a first lower press part 114A-1, a second lower press part 114A-2, and a third lower press part 114A-3, which correspond to the first area W-1, the second area W-2, and the third area W-3 of the wafer W, respectively; the first upper press part 112A-1 and the first lower press part 114A-1 are suitable for applying a first pressure to the first area W-1 of the wafer W, the second upper press part 112A-2 and the second lower press part 114A-2 are suitable for applying a second pressure to the second area W-2 of the wafer W, and the third upper press part 112A-3 and the third lower press part 114A-3 are suitable for applying a third pressure to the third area W-3 of the wafer W, the first pressure is greater than the second pressure, and the second pressure is greater than the third pressure. In short, in this embodiment, the first pressing head 112A and the second pressing head 114A may each have a plurality of separate pressing parts to apply different pressures to different regions of the wafer W to cope with various geometric defects in different regions of the wafer W.

[0063] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A wafer processing device, characterized in that: include: Pressure components, including: A first pressing head having a first working surface; a second pressing head having a second working surface, wherein the first pressing head and the second pressing head are adapted to engage with each other to sandwich the wafer between the first working surface and the second working surface and apply pressure to the wafer along a pressure direction; a first pressurizing shaft connected to the first pressurizing head; and a second pressure shaft connected to the second pressure head, wherein the axial directions of the first pressure shaft and the axial directions of the second pressure shaft are substantially parallel to the pressure direction, and the projection position of the first pressure shaft on the wafer is staggered from the projection position of the second pressure shaft on the wafer; a rotating mechanism connected to the pressure-applying assembly; a control element adapted to cause the rotating mechanism to drive the first pressing head and the second pressing head to rotate so as to adjust an angle between the first working surface and the second working surface and a horizontal plane, wherein a normal direction of the horizontal plane is substantially parallel to the pressing direction; and A heat source is adapted to heat the wafer sandwiched between the first working surface and the second working surface.

2. The wafer processing equipment according to claim 1, wherein: The heat source includes a radio frequency coil surrounding the wafer.

3. The wafer processing equipment according to claim 1, wherein: Also includes: A plurality of sacrificial layers are respectively disposed on the first working surface and the second working surface to contact the wafer.

4. The wafer processing equipment according to claim 1, wherein: Also includes: The temperature detector is suitable for detecting the instantaneous temperature of the wafer and is electrically connected to the control element.

5. The wafer processing equipment according to claim 4, characterized in that: The control element is adapted to enable the rotating mechanism to drive the first pressing head and the second pressing head to rotate according to the difference between the instantaneous temperature of the wafer and a predetermined annealing temperature, so as to adjust the included angle to a predetermined angle.

6. The wafer processing equipment according to claim 4, characterized in that: The control element is adapted to control the pressure component to apply a predetermined pressure to the wafer according to a difference between the instantaneous temperature of the wafer and a predetermined annealing temperature.

7. The wafer processing equipment according to claim 4, characterized in that: The control element is adapted to adjust the heating power of the heat source according to the instantaneous temperature of the wafer.

8. The wafer processing equipment according to claim 1, wherein: Also includes: The angle detector is adapted to detect the instantaneous angle of the included angle and is electrically connected to the control element, wherein the control element is adapted to enable the rotation mechanism to drive the first pressing head and the second pressing head to rotate according to the instantaneous angle.

9. The wafer processing equipment according to claim 1, wherein: Also includes: The pressure detector is suitable for detecting the instantaneous pressure applied by the first pressure head and the second pressure head to the wafer, and is electrically connected to the control element, wherein the control element is suitable for adjusting the pressure applied by the pressure component to the wafer according to the instantaneous pressure.

10. The wafer processing equipment according to claim 1, wherein: The control element is adapted to control the time during which the pressure-applying component applies pressure to the wafer.

11. The wafer processing equipment according to claim 1, wherein: The control element is adapted to control the rotation mechanism to maintain the included angle for a predetermined period of time.

12. The wafer processing equipment according to claim 1, wherein: The first pressure head has multiple upper pressure parts, and the second pressure head has multiple lower pressure parts. The multiple upper pressure parts are structurally separated from each other and correspond to multiple areas of the wafer respectively. The multiple lower pressure parts are structurally separated from each other and correspond to the multiple areas of the wafer respectively.

13. The wafer processing equipment according to claim 12, wherein: The plurality of regions of the wafer include a first region, a second region, and a third region, the geometric center of the wafer is located in the first region, the third region of the wafer has an edge of the wafer, and the second region is located between the first region and the third region; The plurality of upper pressurizing parts include a first upper pressurizing part, a second upper pressurizing part, and a third upper pressurizing part, which correspond to the first area, the second area, and the third area of the wafer respectively; The plurality of lower pressing parts include a first lower pressing part, a second lower pressing part, and a third lower pressing part, which correspond to the first area, the second area, and the third area of the wafer respectively; The first upper press part and the first lower press part are suitable for applying a first pressure to the first area of the wafer, the second upper press part and the second lower press part are suitable for applying a second pressure to the second area of the wafer, and the third upper press part and the third lower press part are suitable for applying a third pressure to the third area of the wafer. The first pressure is greater than the second pressure, and the second pressure is greater than the third pressure.

14. A wafer processing device, characterized in that: include: Pressure components, including: A first pressing head having a first working surface; a second pressing head having a second working surface, wherein the first pressing head and the second pressing head are adapted to engage with each other to sandwich the wafer between the first working surface and the second working surface and apply pressure to the wafer along a pressure direction; a first pressurizing shaft connected to the first pressurizing head; and a second pressure shaft connected to the second pressure head, wherein the axial direction of the first pressure shaft and the axial direction of the second pressure shaft are substantially parallel, and the projection position of the first pressure shaft on the wafer is staggered with the projection position of the second pressure shaft on the wafer; a rotating mechanism connected to the pressure-applying assembly; a control element electrically connected to the rotation mechanism and adapted to cause the rotation mechanism to drive the first pressing head and the second pressing head to rotate so as to adjust an angle between the first working surface and the second working surface and a horizontal plane, wherein a normal direction of the horizontal plane is substantially parallel to the pressure direction; an angle detector electrically connected to the control element; and The heat source is disposed on the pressure component and is suitable for heating the wafer sandwiched between the first working surface and the second working surface.

15. The wafer processing equipment according to claim 14, wherein: The heat source includes a radio frequency coil.

16. The wafer processing equipment according to claim 14, wherein: Also includes: A plurality of sacrificial layers are respectively disposed on the first working surface and the second working surface.

17. The wafer processing equipment according to claim 14, wherein: Also includes: The temperature detector is electrically connected to the control element.

18. The wafer processing equipment according to claim 14, wherein: Also includes: The pressure detector is electrically connected to the control element.

19. The wafer processing equipment according to claim 14, wherein: The first pressurizing head has a plurality of upper pressurizing parts, and the second pressurizing head has a plurality of lower pressurizing parts. The plurality of upper pressurizing parts are structurally separated from each other, and the plurality of lower pressurizing parts are structurally separated from each other and respectively correspond to the plurality of upper pressurizing parts.

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