A heating control method and device based on three-phase inverter power switch module

Abstract

This application provides a heating control method and device for a three-phase inverter power switch module. The method includes: detecting the half-bridge current of an inverter half-bridge in the three-phase inverter switch module; and adjusting the half-bridge dead time of the inverter half-bridge based on the half-bridge current and current switching ripple to adjust the heating power of the body diode of the field effect transistor in the three-phase inverter switch module accordingly. This embodiment can achieve efficient heating of the MOSFET body diode by controlling and adjusting the dead time.

Description

Technical Field

[0001] The present application relates to the field of vehicle heating control, and more specifically, to a heating control method and device based on a three-phase inverter power switch module. Background Art

[0002] Automobile cabin heating is an important function to ensure vehicle safety (defog, defrost, dehumidification), comfortable driving and improve battery performance.

[0003] Currently, there are methods in the field that use the three-phase inverter power switch module and motor windings in the electric vehicle power drive system as heat sources. This method can achieve the heating function without adding additional hardware (such as PTC or HVH), thereby significantly reducing costs.

[0004] However, when this type of three-phase inverter power switch module generates heat, the motor winding's current capacity is limited. This means that even when the motor winding reaches its maximum allowable heat output, the three-phase inverter power switch module has far less than its maximum heat output. Therefore, how to maximize heat generation while maintaining limited current in the three-phase inverter power switch module has become an urgent issue. Summary of the Invention

[0005] The purpose of the embodiments of the present application is to provide a heating control method and device based on a three-phase inverter power switch module, which can achieve the effect of efficient heating of the MOSFET body diode by controlling and adjusting the dead time.

[0006] A first aspect of an embodiment of the present application provides a heating control method based on a three-phase inverter power switch module, comprising:

[0007] detecting a half-bridge current of an inverter half-bridge in the three-phase inverter switch module;

[0008] Based on the half-bridge current, the half-bridge dead time of the inverter half-bridge is adjusted so that the body diode heating power of the field effect transistor in the three-phase inverter switch module is adjusted accordingly.

[0009] In the above implementation process, the method can increase the time that the current flows through the body diode by increasing the switch dead zone, thereby increasing the heating power of the body diode and thus increasing the heating power of the entire power module.

[0010] Furthermore, the step of adjusting the half-bridge dead time of the inverter half-bridge based on the half-bridge current includes:

[0011] Calculating a minimum dead time of the inverter half-bridge based on the half-bridge current;

[0012] The half-bridge dead time of the inverter half-bridge is adjusted based on the minimum dead time, so that the half-bridge dead time is not less than the minimum dead time.

[0013] Furthermore, the step of adjusting the half-bridge dead time of the inverter half-bridge based on the half-bridge current so as to adjust the body diode heating power of the field effect transistor in the three-phase inverter switch module accordingly includes:

[0014] Calculating an upper limit dead time of the inverter half-bridge based on the half-bridge current;

[0015] The half-bridge dead time of the inverter half-bridge is adjusted to the upper limit dead time so as to maximize the heating power of the body diode of the field effect transistor in the three-phase inverter switch module.

[0016] Furthermore, the method further comprises:

[0017] Determining the maximum heating power of the three-phase inverter power switch module;

[0018] When it is determined that the half-bridge dead time is the upper limit dead time, whether the body diode heating power of the field effect transistor in the three-phase inverter switch module is greater than the maximum heating power;

[0019] When the body diode heating power of the field effect transistor in the three-phase inverter switch module is greater than the maximum heating power, calculating the optimal dead time based on the maximum heating power;

[0020] The half-bridge dead time is adjusted to the optimal dead time so that the body diode heating power of the field effect transistor in the three-phase inverter switch module is optimized.

[0021] Furthermore, the three-phase inverter switch module has three inverter half-bridges, wherein each inverter half-bridge includes two field effect transistors.

[0022] A second aspect of an embodiment of the present application provides a heating control device based on a three-phase inverter power switch module, the heating control device based on the three-phase inverter power switch module comprising:

[0023] A detection unit, configured to detect a half-bridge current of an inverter half-bridge in the three-phase inverter switch module;

[0024] The adjustment unit is used to adjust the half-bridge dead time of the inverter half-bridge based on the half-bridge current, so that the body diode heating power of the field effect transistor in the three-phase inverter switch module is adjusted accordingly.

[0025] In the above implementation process, the device can increase the time that the current flows through the body diode by increasing the switching dead zone, thereby increasing the heating power of the body diode and thus increasing the heating power of the entire power module.

[0026] Furthermore, the adjustment unit includes:

[0027] a calculation subunit, configured to calculate a minimum dead time of the inverter half-bridge based on the half-bridge current;

[0028] The adjusting subunit is configured to adjust the half-bridge dead time of the inverter half-bridge based on the minimum dead time, so that the half-bridge dead time is not less than the minimum dead time.

[0029] Furthermore, the adjustment unit includes:

[0030] a calculation subunit, configured to calculate an upper limit dead time of the inverter half-bridge based on the half-bridge current;

[0031] The adjusting subunit is used to adjust the half-bridge dead time of the inverter half-bridge to the upper limit dead time, so as to maximize the heating power of the body diode of the field effect transistor in the three-phase inverter switch module.

[0032] Furthermore, the adjustment unit further includes:

[0033] a determination subunit, configured to determine the maximum heating power of the three-phase inverter power switch module;

[0034] A judging subunit, configured to judge whether the body diode heating power of the field effect transistor in the three-phase inverter switch module is greater than the maximum heating power when the half-bridge dead time is the upper limit dead time;

[0035] The calculation subunit is further configured to calculate an optimal dead time based on the maximum heating power when the body diode heating power of the field effect transistor in the three-phase inverter switch module is greater than the maximum heating power;

[0036] The adjusting subunit is further configured to adjust the half-bridge dead time to the optimal dead time, so as to optimize the heating power of the body diode of the field effect transistor in the three-phase inverter switch module.

[0037] Furthermore, the three-phase inverter switch module has three inverter half-bridges, wherein each inverter half-bridge includes two field effect transistors.

[0038] A third aspect of an embodiment of the present application provides an electronic device, including a memory and a processor, wherein the memory is used to store a computer program, and the processor runs the computer program to enable the electronic device to execute any one of the heating control methods based on a three-phase inverter power switch module described in the first aspect of the embodiment of the present application.

[0039] A fourth aspect of an embodiment of the present application provides a computer-readable storage medium storing computer program instructions. When the computer program instructions are read and executed by a processor, the heating control method based on a three-phase inverter power switch module described in any one of the first aspects of the embodiment of the present application is executed. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required for use in the embodiments of the present application. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without creative work.

[0041] Figure 1 A schematic flow chart of a heating control method based on a three-phase inverter power switch module provided in an embodiment of the present application;

[0042] Figure 2 A schematic structural diagram of a heating control device based on a three-phase inverter power switch module provided in an embodiment of the present application;

[0043] Figure 3 A schematic diagram of the circuit structure of an electric vehicle electric drive system provided in an embodiment of the present application;

[0044] Figure 4 A schematic diagram of the relationship between the dead time setting and the half-bridge current provided in an embodiment of the present application;

[0045] Figure 5 A schematic diagram of the relationship between dead time setting and half-bridge current provided in an embodiment of the present application. DETAILED DESCRIPTION

[0046] The technical solutions in the embodiments of the present application will be described below in conjunction with the drawings in the embodiments of the present application.

[0047] It should be noted that similar reference numerals and letters represent similar items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further defined or explained in subsequent drawings. At the same time, in the description of this application, the terms "first", "second", etc. are only used to distinguish the description and should not be understood as indicating or implying relative importance.

[0048] Example 1

[0049] Please see Figure 1 , Figure 1A flow chart of a heating control method based on a three-phase inverter power switch module is provided for this embodiment. The heating control method based on a three-phase inverter power switch module includes:

[0050] S101 , detecting a half-bridge current of an inverter half-bridge in a three-phase inverter switch module.

[0051] In this embodiment, the three-phase inverter switch module has three inverter half-bridges, wherein each inverter half-bridge includes two field effect transistors.

[0052] Please see Figure 3 , Figure 3 The circuit structure diagram of the electric vehicle power drive system is shown, in which the half-bridge switches and diodes are replaced by MOSFETs in this application. That is, the corresponding switches and diodes are replaced by field-effect transistors in this application.

[0053] In this embodiment, the method can adjust the half-bridge dead time of the inverter half-bridge based on the half-bridge current and the current switching ripple.

[0054] S102 : Calculate the minimum dead time of the inverter half-bridge based on the half-bridge current.

[0055] S103 : Calculate the upper limit dead time of the inverter half-bridge based on the half-bridge current.

[0056] S104: Determine the maximum heating power of the three-phase inverter power switch module.

[0057] S105 , when the half-bridge dead time is the upper limit dead time, it is determined whether the body diode heating power of the field effect transistor in the three-phase inverter switch module is greater than the maximum heating power. If so, execute steps S106 to S107 ; if not, execute step S108 .

[0058] S106: Calculate the optimal dead time based on the maximum heating power.

[0059] S107 , adjusting the half-bridge dead time to the optimal dead time, so as to optimize the heating power of the body diode of the field effect transistor in the three-phase inverter switch module.

[0060] S108 , adjusting the half-bridge dead time to the upper limit dead time, so as to maximize the heat generation power of the body diode of the field effect transistor in the three-phase inverter switch module.

[0061] In this embodiment, the method is a method for achieving efficient heat generation by utilizing the body diode of MOSFET for a three-phase inverter power switch module using MOSFET.

[0062] In this embodiment, the method increases the time that the current flows through the body diode by increasing the switch dead zone, thereby increasing the heating power of the body diode, thereby increasing the heating power of the entire power module.

[0063] In this embodiment, the three-phase inverter bridge is composed of three half-bridges, each of which includes two switches, an upper and a lower switch (for example, Q1 and Q2 constitute a half-bridge). Typically, when the three-phase inverter bridge is operating, the upper and lower switches satisfy a complementary relationship, that is, when the upper switch is disconnected, the lower switch is immediately turned on, and when the lower switch is disconnected, the upper switch is immediately turned on. There is a very short period of time, called a dead zone, between the time when one switch is turned off and the time when the other switch is turned on. During this period, both the upper and lower switches are turned off. The purpose is to prevent the upper and lower switches from overlapping in their conduction time due to errors in the transition process between turning on and off (in this case, the high-voltage DC bus will be directly short-circuited).

[0064] In this embodiment, during the dead time, since both the upper and lower transistors are turned off, the current of the half bridge can only flow through the diodes.

[0065] In this embodiment, for the power semiconductor switch of the MOSFET structure, its anti-parallel diode is inherent, that is, a semiconductor MOSFET wafer itself contains a "switch" and a diode in parallel with the switch, which is called a "body diode".

[0066] In this embodiment, when the "switch" portion of the MOSFET is turned on, current is allowed to flow bidirectionally through the "switch," unlike an IGBT-structured power semiconductor switch, where current can only flow from the positive electrode (collector C) to the negative electrode (emitter E) of the IGBT even when the switch is turned on. Furthermore, because the internal resistance of the MOSFET's "switch" is relatively small, the voltage drop generated at the same current is lower than that of the body diode. Therefore, as long as the switch is turned on, the current will flow through the "switch" portion regardless of the direction of flow. Therefore, in a three-phase inverter bridge composed of normal MOSFETs, even if the current of a certain switch is flowing from source to drain, the software will still choose to turn on that switch to reduce losses, allowing current to flow through the switch portion. This is known in the industry as "synchronous rectification." At the same time, the software also minimizes the dead time to minimize current flow through the body diode. For this reason, when designing MOSFETs, the forward voltage drop of the body diode is often sacrificed, resulting in a significantly greater forward voltage drop than the forward voltage drop of the switch portion. For example, under typical operating conditions, the body diode conduction voltage drop can reach about 3V, while the voltage drop of the switching part is only about 1V.

[0067] Therefore, for MOSFET power switch tubes, when loss becomes its target and it is required to actively generate heat, the dead time of the upper and lower tubes can be increased during control to allow as much current as possible to flow through the body diode, thereby maximizing loss and generating greater heat power.

[0068] In this embodiment, when the current flowing through the half-bridge is small, a smaller dead time is used; when the current flowing through the half-bridge is large, a larger dead time is used.

[0069] If the dead zone is too large, it will cause significant current distortion when the current is low. The critical dead zone time that determines whether the dead zone causes current distortion is roughly inversely proportional to the bus voltage Udc, directly proportional to the motor inductance Lm, and directly proportional to the motor winding current Iph flowing through the half-bridge. That is, it roughly satisfies the following relationship:

[0070]

[0071] Therefore, the switching dead time can be designed as follows:

[0072] Step 1: Calculate the initial dead time T for each of the three inverter half-bridges. DT,0 =k L *abs(I ph ) / U dc Where k L It has the dimension of inductance and is an adjustable value. It can be set as a constant based on experimental measurements, or it can be set as a variable according to other requirements. ph is the current flowing through each half-bridge phase. abs is the absolute value function. U dc is the DC bus voltage.

[0073] Step 2: For the three inverter half-bridges, limit the calculated initial dead time to obtain the final dead time T DT =min(max(T DT,0 ,T DT,min ),T pwm ). Among them, T DT,min It is the minimum dead time to ensure that the upper and lower pipes do not flow straight through; T pwm It is the switching period of the power switch tube, that is, the period of the PWM modulation wave that drives the power switch action.

[0074] Please see Figure 4 , Figure 4 A schematic diagram showing the relationship between dead time setting and half-bridge current is shown.

[0075] In this embodiment, based on the above steps, the three half bridges adjust the coefficients k L, thereby adjusting the heating power of the power module, or limiting the heating power of the power module to avoid module overheating.

[0076] In this embodiment, the coefficient k L The larger the value, the longer the dead time and the greater the heating power; on the contrary, k L The smaller it is, the shorter the dead time is and the smaller the heating power is.

[0077] In this embodiment, k L It has a maximum value, and its maximum value is to ensure that current distortion will not be caused by excessive dead zone.

[0078] Please see Figure 5 , Figure 5 A schematic diagram showing the relationship between dead time setting and half-bridge current is shown.

[0079] In this embodiment, the execution subject of the method may be a computing device such as a computer or a server, and this is not limited in this embodiment.

[0080] In this embodiment, the execution subject of the method may also be a smart device such as a smart phone, a tablet computer, etc., which is not limited in this embodiment.

[0081] It can be seen that the heating control method based on the three-phase inverter power switch module described in this embodiment can increase the time that the current flows through the body diode by increasing the switch dead zone, thereby increasing the heating power of the body diode and thus increasing the heating power of the entire power module.

[0082] Example 2

[0083] Please see Figure 2 , Figure 2 This is a schematic diagram of the structure of a heating control device based on a three-phase inverter power switch module provided in this embodiment. Figure 2 As shown, the heating control device based on the three-phase inverter power switch module includes:

[0084] The detection unit 210 is used to detect the half-bridge current of the inverter half-bridge in the three-phase inverter switch module;

[0085] The adjustment unit 220 is used to adjust the half-bridge dead time of the inverter half-bridge based on the half-bridge current, so that the body diode heating power of the field effect transistor in the three-phase inverter switch module is adjusted accordingly.

[0086] As an optional implementation, the adjustment unit 220 includes:

[0087] A calculation subunit 221 is configured to calculate a minimum dead time of the inverter half-bridge based on the half-bridge current;

[0088] The adjusting sub-unit 222 is configured to adjust the half-bridge dead time of the inverter half-bridge based on the minimum dead time, so that the half-bridge dead time is not less than the minimum dead time.

[0089] As an optional implementation, the adjustment unit 220 includes:

[0090] A calculation subunit 221 is configured to calculate an upper limit dead time of the inverter half-bridge based on the half-bridge current;

[0091] The adjusting sub-unit 222 is used to adjust the half-bridge dead time of the inverter half-bridge to the upper limit dead time, so as to maximize the heating power of the body diode of the field effect transistor in the three-phase inverter switch module.

[0092] As an optional implementation, the adjustment unit 220 further includes:

[0093] A determination subunit 223 is configured to determine the maximum heating power of the three-phase inverter power switch module;

[0094] The judging subunit 224 is configured to judge whether the body diode heating power of the field effect transistor in the three-phase inverter switch module is greater than the maximum heating power when the half-bridge dead time is the upper limit dead time;

[0095] The calculation subunit 221 is further configured to calculate an optimal dead time based on the maximum heating power when the body diode heating power of the field effect transistor in the three-phase inverter switch module is greater than the maximum heating power;

[0096] The adjusting sub-unit 222 is further configured to adjust the half-bridge dead time to an optimal dead time, so as to optimize the heating power of the body diode of the field effect transistor in the three-phase inverter switch module.

[0097] In this embodiment, the three-phase inverter switch module has three inverter half-bridges, wherein each inverter half-bridge includes two field effect transistors.

[0098] In the embodiment of the present application, the explanation of the heating control device based on the three-phase inverter power switch module can refer to the description in Example 1, and no further details will be given in this embodiment.

[0099] It can be seen that the heating control device based on the three-phase inverter power switch module described in this embodiment can increase the time that the current flows through the body diode by increasing the switch dead zone, thereby increasing the heating power of the body diode and thus increasing the heating power of the entire power module.

[0100] An embodiment of the present application provides an electronic device, including a memory and a processor, wherein the memory is used to store a computer program, and the processor runs the computer program to enable the electronic device to execute the heating control method based on the three-phase inverter power switch module in Example 1 of the present application.

[0101] An embodiment of the present application provides a computer-readable storage medium storing computer program instructions. When the computer program instructions are read and executed by a processor, the heating control method based on the three-phase inverter power switch module in embodiment 1 of the present application is executed.

[0102] In the several embodiments provided in this application, it should be understood that the disclosed devices and methods can also be implemented in other ways. The device embodiments described above are merely illustrative. For example, the flowcharts and block diagrams in the accompanying drawings show the possible architectures, functions and operations of the devices, methods and computer program products according to the multiple embodiments of the present application. In this regard, each box in the flowchart or block diagram can represent a module, a program segment or a part of the code, and the module, program segment or a part of the code contains one or more executable instructions for implementing the specified logical functions. It should also be noted that in some alternative implementations, the functions marked in the box can also occur in an order different from that marked in the accompanying drawings. For example, two consecutive boxes can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each box in the block diagram and / or flowchart, and the combination of boxes in the block diagram and / or flowchart, can be implemented using a dedicated hardware-based system that performs the specified function or action, or can be implemented using a combination of dedicated hardware and computer instructions.

[0103] In addition, the functional modules in each embodiment of the present application can be integrated together to form an independent part, or each module can exist independently, or two or more modules can be integrated to form an independent part.

[0104] If the functions are implemented in the form of software function modules and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present application, or the part that contributes to the prior art or the part of the technical solution, can be embodied in the form of a software product. The computer software product is stored in a storage medium and includes several instructions for enabling a computer device (which can be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the method described in each embodiment of the present application. The aforementioned storage medium includes various media that can store program codes, such as a USB flash drive, a mobile hard disk, a read-only memory (ROM), a random access memory (RAM), a magnetic disk or an optical disk.

[0105] The foregoing is merely an embodiment of the present application and is not intended to limit the scope of protection of the present application. Various modifications and variations are possible for those skilled in the art. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present application shall be included within the scope of protection of the present application. It should be noted that similar reference numerals and letters represent similar items in the following figures. Therefore, once an item is defined in one figure, it does not need to be further defined or explained in subsequent figures.

[0106] The above description is merely a specific embodiment of the present application, but the scope of protection of the present application is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in the present application should be included in the scope of protection of the present application. Therefore, the scope of protection of the present application should be based on the scope of protection of the claims.

[0107] It should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply the existence of any such actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article, or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or device. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of other identical elements in the process, method, article, or device comprising the element.

Claims

1. A heating control method based on a three-phase inverter power switch module, characterized in that: The method comprises: Detecting the half-bridge current of the inverter half-bridge in the three-phase inverter power switch module; Based on the half-bridge current, adjusting the half-bridge dead time of the inverter half-bridge, so that the body diode heating power of the field effect transistor in the three-phase inverter power switch module is adjusted accordingly; The step of adjusting the half-bridge dead time of the inverter half-bridge based on the half-bridge current so as to adjust the body diode heating power of the field effect transistor in the three-phase inverter power switch module accordingly includes: Calculating an upper limit dead time of the inverter half-bridge based on the half-bridge current; Adjust the half-bridge dead time of the inverter half-bridge to the upper limit dead time, so as to maximize the heating power of the body diode of the field effect transistor in the three-phase inverter power switch module; The method further comprises: Determining the maximum heating power of the three-phase inverter power switch module; When it is determined that the half-bridge dead time is the upper limit dead time, whether the body diode heating power of the field effect transistor in the three-phase inverter power switch module is greater than the maximum heating power; When the body diode heating power of the field effect transistor in the three-phase inverter power switch module is greater than the maximum heating power, calculating the optimal dead time based on the maximum heating power; The half-bridge dead time is adjusted to the optimal dead time so that the body diode heating power of the field effect transistor in the three-phase inverter power switch module is optimized.

2. The heating control method based on the three-phase inverter power switch module according to claim 1, characterized in that: The step of adjusting the half-bridge dead time of the inverter half-bridge based on the half-bridge current includes: Calculating a minimum dead time of the inverter half-bridge based on the half-bridge current; The half-bridge dead time of the inverter half-bridge is adjusted based on the minimum dead time, so that the half-bridge dead time is not less than the minimum dead time.

3. The heating control method based on the three-phase inverter power switch module according to claim 1, characterized in that: The three-phase inverter power switch module has three inverter half-bridges, wherein each inverter half-bridge includes two field effect transistors.

4. A heating control device based on a three-phase inverter power switch module, characterized in that: The heating control device based on the three-phase inverter power switch module includes: A detection unit, configured to detect a half-bridge current of an inverter half-bridge in the three-phase inverter power switch module; An adjusting unit, configured to adjust a half-bridge dead time of the inverter half-bridge based on the half-bridge current, so that the body diode heating power of the field effect transistor in the three-phase inverter power switch module is adjusted accordingly; Wherein, the adjustment unit includes: a calculation subunit, configured to calculate an upper limit dead time of the inverter half-bridge based on the half-bridge current; An adjusting subunit, configured to adjust the half-bridge dead time of the inverter half-bridge to the upper limit dead time, so as to maximize the heating power of the body diode of the field effect transistor in the three-phase inverter power switch module; Wherein, the adjustment unit further includes: A determination subunit, used to determine the maximum heating power of the three-phase inverter power switch module; A judgment subunit is used to judge whether the body diode heating power of the field effect transistor in the three-phase inverter power switch module is greater than the maximum heating power when the half-bridge dead time is the upper limit dead time; The calculation subunit is further configured to calculate an optimal dead time based on the maximum heating power when the body diode heating power of the field effect transistor in the three-phase inverter power switch module is greater than the maximum heating power; The adjustment subunit is also used to adjust the half-bridge dead time to the optimal dead time, so as to optimize the body diode heating power of the field effect tube in the three-phase inverter power switch module.

5. The heating control device based on the three-phase inverter power switch module according to claim 4, characterized in that: The adjustment unit includes: a calculation subunit, configured to calculate a minimum dead time of the inverter half-bridge based on the half-bridge current; The adjusting subunit is configured to adjust the half-bridge dead time of the inverter half-bridge based on the minimum dead time, so that the half-bridge dead time is not less than the minimum dead time.

6. An electronic device, characterized in that: The electronic device includes a memory and a processor, the memory is used to store a computer program, and the processor runs the computer program to enable the electronic device to perform the heating control method based on a three-phase inverter power switch module according to any one of claims 1 to 3.

7. A readable storage medium, characterized in that: The readable storage medium stores computer program instructions, and when the computer program instructions are read and executed by a processor, the heating control method based on the three-phase inverter power switch module according to any one of claims 1 to 3 is executed.

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