APF deposition chamber cleaning method

Abstract

The present application relates to the technical field of semiconductor integrated circuit manufacturing, and specifically to a method for cleaning an APF deposition chamber. The method comprises the following steps: spraying a fluorine-containing plasma beam into the deposition chamber to clean the silicide in the deposition chamber; spraying oxygen ions into the deposition chamber to clean the APF in the deposition chamber; when performing the step of spraying oxygen ions into the deposition chamber to clean the APF in the deposition chamber, the heating platform and the clamping jaws arranged in the deposition chamber sequentially perform the following steps: the heating platform is located at a first position, the clamping jaws are located at a first angle, and the deposition chamber filled with oxygen ions is cleaned; the heating platform is lowered from the first position to the second position, the clamping jaws are rotated from the first angle to the second angle, and the deposition chamber filled with oxygen ions is cleaned; the heating platform is raised from the second position to the first position, the clamping jaws are rotated from the second angle to the first angle, and the deposition chamber filled with oxygen ions is cleaned.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor integrated circuit manufacturing, and in particular to a method for cleaning an APF deposition chamber. Background Art

[0002] With the continuous advancement of semiconductor manufacturing processes, the size of integrated circuits is getting smaller and smaller. When the process technology is less than 90nm, APF (Advanced Patterning Film) material has the characteristics of high etching selectivity and low pollution. Moreover, this material is an amorphous carbon material, generally formed by the decomposition of acetylene (C2H2) under high-temperature plasma, and is easily removed by oxygen or ozone. It is widely used in high aspect ratio etching hard mask layers.

[0003] When making APF film on a wafer, the wafer needs to be fixed on a heating table by a clamp before the APF material is deposited. However, while depositing APF, the APF film layer will also be deposited on the clamp used to fix the wafer, and due to the special shape of the clamp, there are dead corners for cleaning and it is difficult to clean the film formed on it, resulting in the film accumulated on the clamp falling off in the subsequent process, forming a pollution source that contaminates the subsequent wafers. Summary of the invention

[0004] The present application provides an APF deposition chamber cleaning method, which can solve the problem that the APF film formed on the clamping claws in the APF deposition chamber of the related art is difficult to clean and accumulates to contaminate subsequent wafers.

[0005] In order to solve the technical problem described in the background technology, the present application provides an APF deposition chamber cleaning method, the APF deposition chamber cleaning method comprising the following steps:

[0006] spraying a fluorine-containing plasma beam into the deposition chamber to clean the silicide in the deposition chamber;

[0007] spraying oxygen ions into the deposition chamber to clean the APF in the deposition chamber;

[0008] When performing the step of spraying oxygen ions into the deposition chamber to clean the APF in the deposition chamber, the heating stage and the clamping jaws arranged in the deposition chamber sequentially perform the following steps:

[0009] The heating platform is located at a first position, the clamping jaws are located at a first angle, and cleaning is performed in a deposition chamber filled with oxygen ions;

[0010] The heating platform is lowered from the first position to the second position, and the clamping jaws are rotated from the first angle to the second angle to perform cleaning in the deposition chamber filled with oxygen ions;

[0011] The heating platform is raised from the second position to the first position, and the clamping jaw is rotated from the second angle to the first angle, and cleaning is performed in the deposition chamber filled with oxygen ions.

[0012] Optionally, the step of spraying a fluorine-containing plasma beam into the deposition chamber to clean the silicide in the deposition chamber comprises:

[0013] The nitrogen trifluoride gas is dissociated into fluorine-containing plasma, and the fluorine-containing plasma is input and sprayed into the deposition chamber to clean the silicide in the deposition chamber.

[0014] Optionally, the step of dissociating nitrogen trifluoride gas to form fluorine-containing plasma, inputting and spraying the fluorine-containing plasma into the deposition chamber, and cleaning the silicide in the deposition chamber comprises:

[0015] The nitrogen trifluoride gas input at a flow rate of 300 sccm to 500 sccm is dissociated to form a fluorine-containing plasma, and the fluorine-containing plasma is input and sprayed into the deposition chamber to clean the silicide in the deposition chamber.

[0016] Optionally, the step of spraying oxygen ions into the deposition chamber to clean the APF in the deposition chamber includes:

[0017] Oxygen is input into the deposition chamber, and a radio frequency source is applied to the deposition chamber, so that the oxygen is ionized and sprayed in the form of oxygen ions to clean the APF in the deposition chamber.

[0018] Optionally, the step of inputting oxygen into the deposition chamber and applying a radio frequency source to the deposition chamber so that the oxygen is ionized and sprayed in the form of oxygen ions to clean the APF in the deposition chamber includes:

[0019] Oxygen gas is introduced into the deposition chamber at a flow rate of 4000 sccm to 5000 sccm, and a radio frequency source is applied to the deposition chamber to ionize the oxygen gas and spray it in the form of oxygen ions to clean the APF in the deposition chamber.

[0020] Optionally, the step of inputting oxygen into the deposition chamber and applying a radio frequency source to the deposition chamber so that the oxygen is ionized and sprayed in the form of oxygen ions to clean the APF in the deposition chamber includes:

[0021] Oxygen is input into the deposition chamber, and a 1000W to 1200W radio frequency source is applied to the deposition chamber, so that the oxygen is ionized and sprayed in the form of oxygen ions to clean the APF in the deposition chamber.

[0022] The technical solution of the present application includes at least the following advantages: by placing the heating table and the clamp in different states during the process of cleaning the deposition chamber and dynamically switching between the different states, the heating table and the clamp can be fully cleaned, avoiding the problem that due to the special shape of the clamp, it is difficult to clean the thin film formed on it due to the cleaning dead corner, resulting in the thin film accumulated on the clamp falling off in the subsequent process to form a pollution source that contaminates the subsequent wafers. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the specific implementation methods of the present application or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0024] Figure 1 A flow chart of an APF deposition chamber cleaning method provided by an embodiment of the present application is shown;

[0025] Figure 2 A schematic diagram showing the state of the heating table and the clamping claws during the cleaning in step S21 is shown;

[0026] Figure 3 A schematic diagram showing the states of the heating table and the clamping claws during the cleaning in step S22 is shown. DETAILED DESCRIPTION

[0027] The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in this application. Obviously, the described embodiments are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0028] In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present application. In addition, the terms "first", "second", and "third" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.

[0029] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, it can also be the internal connection of two components, it can be a wireless connection, or it can be a wired connection. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0030] In addition, the technical features involved in the different embodiments of the present application described below can be combined with each other as long as they do not conflict with each other.

[0031] Figure 1 A flow chart of an APF deposition chamber cleaning method provided in an embodiment of the present application is shown, in which a shower head and a heating platform are respectively provided at the upper and lower ends of the APF deposition chamber, and a clamp is provided around the heating platform.

[0032] from Figure 1 It can be seen that the APF deposition chamber cleaning method includes the following steps:

[0033] Step S1: spraying a fluorine-containing plasma beam into the deposition chamber to clean the silicide in the deposition chamber.

[0034] The cleaning of the deposition chamber using a fluorine-containing plasma beam in step S1 is pre-cleaning to remove the silicide introduced into the deposition chamber in the previous step.

[0035] Optionally, nitrogen trifluoride gas may be used outside the deposition chamber to dissociate the nitrogen trifluoride gas into fluorine-containing plasma, and then the fluorine-containing plasma is input and sprayed into the deposition chamber to clean the silicide in the deposition chamber.

[0036] The nitrogen trifluoride gas input at a flow rate of 300 sccm to 500 sccm may be dissociated to form a fluorine-containing plasma, and the fluorine-containing plasma is input and sprayed into the deposition chamber to clean the silicide in the deposition chamber.

[0037] Step S2: spraying oxygen ions into the deposition chamber to clean the APF in the deposition chamber.

[0038] Oxygen gas may be introduced into the deposition chamber at a flow rate of 4000 sccm to 5000 sccm, and a radio frequency source of 1000 W to 1200 W may be applied to the deposition chamber, so that the oxygen gas is ionized and sprayed in the form of oxygen ions to clean the APF in the deposition chamber.

[0039] When performing step S2, the heating stage and the clamping jaws provided in the deposition chamber sequentially perform the following steps S21 to S23:

[0040] Step S21: The heating platform is located at a first position, the clamping jaws are located at a first angle, and cleaning is performed in a deposition chamber filled with oxygen ions.

[0041] Optionally, oxygen gas may be introduced into the deposition chamber at a flow rate of 4000 sccm to 5000 sccm, and a 1000 W to 1200 W RF source may be applied to the deposition chamber to ionize the oxygen gas and spray it in the form of oxygen ions to clean the APF in the deposition chamber.

[0042] Reference Figure 2 , which shows a schematic diagram of the status of the heating table and the clamping claws during the cleaning of step S21.

[0043] from Figure 2 As can be seen from the figure, the heating platform 200 is located at the first position, the clamping jaw 300 is at the first angle, and the heating platform 200 is located at the first position. Figure 2 The position states of the heating stage 200 and the clamping jaw 300 shown in the figure can clean the deposition chamber 100 by spraying oxygen ions into the deposition chamber 100 , thereby oxidatively cleaning the APF in the deposition chamber 100 including the exposed surfaces of the heating stage 200 and the clamping jaw 300 .

[0044] but, Figure 2 The position states of the clamping jaws 300 and the heating platform 200 shown still have blind spots, and the APF thereon cannot be cleaned and removed in step S21, so subsequent steps are required.

[0045] Step S22: lowering the heating platform from the first position to the second position, rotating the clamping jaws from the first angle to the second angle, and performing cleaning in the deposition chamber filled with oxygen ions.

[0046] Reference Figure 3 , which shows a schematic diagram of the status of the heating table and the clamping claws during the cleaning of step S22.

[0047] from Figure 3 It can be seen that during the process of the heating platform 200 descending from the first position to the second position, and during the process of the clamping jaw 300 rotating from the first angle to the second angle, the heating platform 200 and the clamping jaw 300 are in a dynamic change process, during which oxygen ions are still sprayed into the deposition chamber 100, which can dynamically clean the APF covering the surface of the heating platform 200 and the clamping jaw 300.

[0048] In addition, after the heating stage 200 descends to the second position and the clamping jaws 300 rotate to the second angle, they are maintained for 10 to 20 seconds, so that the heating stage 200 at the second position and the clamping jaws 300 rotated to the second angle are further cleaned with oxygen ions.

[0049] Step S23: raising the heating platform from the second position to the first position, rotating the clamping jaws from the second angle to the first angle, and performing cleaning in the deposition chamber filled with oxygen ions.

[0050] During the process of the heating platform 200 rising from the second position to the first position, and the process of the clamp 300 rotating from the second angle to the first angle, the heating platform 200 and the clamp 300 are in dynamic change. During this process, oxygen ions are still sprayed into the deposition chamber 100, which can further dynamically clean the APF covering the surface of the heating platform 200 and the clamp 300.

[0051] This embodiment enables the heating table and the clamp to be in different states during the process of cleaning the deposition chamber, and dynamically switches between the different states, so as to fully clean the heating table and the clamp, thereby avoiding the problem that the thin film formed on the clamp is difficult to clean due to the special shape of the clamp, resulting in the thin film accumulated on the clamp falling off in the subsequent process and forming a pollution source to contaminate the subsequent wafers.

[0052] Obviously, the above embodiments are merely examples for the purpose of clear explanation, and are not intended to limit the implementation methods. For those skilled in the art, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all the implementation methods here. The obvious changes or modifications derived therefrom are still within the scope of protection created by this application.

Claims

1. A method for cleaning an APF deposition chamber, It is characterized in that The APF deposition chamber cleaning method comprises the following steps: spraying a fluorine-containing plasma beam into the deposition chamber to clean the silicide in the deposition chamber; spraying oxygen ions into the deposition chamber to clean the APF in the deposition chamber; When performing the step of spraying oxygen ions into the deposition chamber to clean the APF in the deposition chamber, the heating stage and the clamping jaws arranged in the deposition chamber sequentially perform the following steps: The heating platform is located at a first position, the clamping jaws are located at a first angle, and cleaning is performed in a deposition chamber filled with oxygen ions; The heating platform is lowered from the first position to the second position, and the clamping jaws are rotated from the first angle to the second angle to perform cleaning in the deposition chamber filled with oxygen ions; The heating platform is raised from the second position to the first position, and the clamping jaw is rotated from the second angle to the first angle, and cleaning is performed in the deposition chamber filled with oxygen ions.

2. The APF deposition chamber cleaning method according to claim 1, It is characterized in that The step of spraying a fluorine-containing plasma beam into the deposition chamber to clean the silicide in the deposition chamber comprises: The nitrogen trifluoride gas is dissociated into fluorine-containing plasma, and the fluorine-containing plasma is input and sprayed into the deposition chamber to clean the silicide in the deposition chamber.

3. The APF deposition chamber cleaning method according to claim 2, It is characterized in that The step of dissociating nitrogen trifluoride gas to form fluorine-containing plasma, inputting and spraying the fluorine-containing plasma into the deposition chamber, and cleaning the silicide in the deposition chamber comprises: The nitrogen trifluoride gas input at a flow rate of 300 sccm to 500 sccm is dissociated to form a fluorine-containing plasma, and the fluorine-containing plasma is input and sprayed into the deposition chamber to clean the silicide in the deposition chamber.

4. The APF deposition chamber cleaning method according to claim 1, It is characterized in that The step of spraying oxygen ions into the deposition chamber to clean the APF in the deposition chamber includes: Oxygen is input into the deposition chamber, and a radio frequency source is applied to the deposition chamber, so that the oxygen is ionized and sprayed in the form of oxygen ions to clean the APF in the deposition chamber.

5. The APF deposition chamber cleaning method according to claim 4, It is characterized in that The step of inputting oxygen into the deposition chamber and applying a radio frequency source to the deposition chamber so that the oxygen is ionized and sprayed in the form of oxygen ions to clean the APF in the deposition chamber includes: Oxygen gas is introduced into the deposition chamber at a flow rate of 4000 sccm to 5000 sccm, and a radio frequency source is applied to the deposition chamber to ionize the oxygen gas and spray it in the form of oxygen ions to clean the APF in the deposition chamber.

6. The APF deposition chamber cleaning method according to claim 4, It is characterized in that The step of inputting oxygen into the deposition chamber and applying a radio frequency source to the deposition chamber so that the oxygen is ionized and sprayed in the form of oxygen ions to clean the APF in the deposition chamber includes: Oxygen is input into the deposition chamber, and a 1000W to 1200W radio frequency source is applied to the deposition chamber, so that the oxygen is ionized and sprayed in the form of oxygen ions to clean the APF in the deposition chamber.

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