Substrate processing equipment

Abstract

The present invention relates to a substrate processing apparatus, comprising: a chamber, a substrate support portion, a top electrode, and a bottom electrode. The substrate support portion supports one or more substrates in the chamber. The top electrode is disposed above the substrate support portion and is disposed opposite to the substrate support portion. The bottom electrode is disposed below the top electrode and is separated from the top electrode. The bottom electrode may include a first electrode and a second electrode. A first radio frequency power source having a first frequency is applied to the first electrode. A second radio frequency power source having a second frequency different from the first frequency is applied to the second electrode.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus that performs processing operations such as deposition processes and etching processes on a substrate. Background Art

[0002] Generally, in order to manufacture solar cells, semiconductor devices, flat panel display devices, etc., thin film layers, thin film circuit patterns, or optical patterns need to be formed on a substrate. To this end, processing operations are performed on the substrate, and examples of the processing operations include a deposition process of depositing a thin film containing a specific material on the substrate, an exposure process of selectively exposing a part of the thin film using a photosensitive material, and an etching process of removing the selectively exposed part in the thin film to form a pattern. These processing operations are performed on the substrate using a substrate processing apparatus.

[0003] A substrate processing apparatus according to the prior art includes a substrate support unit for supporting a substrate and a gas injection unit for injecting a processing gas toward the substrate support unit. The substrate processing apparatus according to the prior art injects gas in a state where a radio frequency (RF) power source having a preset frequency is applied to the gas injection unit, and thus a processing operation can be performed on the substrate.

[0004] Here, in a case where the substrate processing apparatus according to the prior art performs a processing operation on a substrate only in a state where a high-frequency RF power source is applied to the gas injection unit, the step coverage of the thin film deposited on the substrate increases, but there is a problem that the density of the thin film deposited on the substrate decreases.

[0005] In addition, in a case where the substrate processing apparatus according to the prior art performs a processing operation on a substrate only in a state where a low-frequency RF power source is applied to the gas injection unit, the density of the thin film deposited on the substrate increases, but there is a problem that the step coverage of the thin film deposited on the substrate decreases.

[0006] As described above, the substrate processing apparatus according to the prior art has a problem in that it is difficult to improve the quality of the substrate on which the processing operation is completed. Summary of the Invention

[0007] Technical problem

[0008] The present invention aims to solve the above problems and provides a substrate processing apparatus to improve the quality of the substrate on which the processing operation is completed.

[0009] Technical solution

[0010] To achieve the above object, the present invention may include the following elements.

[0011] The substrate processing apparatus according to the present invention may include: a chamber, a substrate support portion, a top electrode, and a bottom electrode. The substrate support portion supports one or more substrates in the chamber. The top electrode is disposed above the substrate support portion and is disposed opposite to the substrate support portion. The bottom electrode is disposed below the top electrode and is separated from the top electrode. The top electrode can eject a first gas through a first gas flow path and eject a second gas through a second gas flow path that is spatially separated from the first gas flow path. The bottom electrode may include a first electrode and a second electrode. A first radio frequency power supply having a first frequency is applied to the first electrode. A second radio frequency power supply having a second frequency different from the first frequency is applied to the second electrode.

[0012] The substrate processing apparatus according to the present invention may include: a chamber, a substrate support portion, a gas injection unit, and a power supply application unit. The substrate support portion supports one or more substrates in the chamber. The gas injection unit is disposed above the substrate support portion and is disposed opposite to the substrate support portion. The power supply application unit is configured to apply a radio frequency power supply. The gas injection unit may include a top electrode and a bottom electrode. The top electrode includes a first gas flow path and a second gas flow path that are spatially separated from each other. The bottom electrode is disposed between the top electrode and the substrate support portion. The bottom electrode may include a first electrode and a second electrode disposed below the top electrode. The power supply application unit may include a first application mechanism and a second application mechanism. The first application mechanism is connected to the first electrode to apply a first radio frequency power supply having a first frequency to the first electrode. The second application mechanism is connected to the second electrode to apply a second radio frequency power supply having a second frequency to the second electrode.

[0013] Beneficial effect

[0014] According to the present invention, the following effects can be obtained.

[0015] The present invention is implemented to perform a processing process on a substrate by using radio frequency power supplies having different frequencies. Therefore, the present invention can improve the quality of the substrate on which the processing process is completed.

[0016] The present invention is implemented to reduce the stress applied to the substrate during the processing process on the substrate. Therefore, the present invention can reduce the degree of bending deformation of the substrate on which the processing process is completed, and further improve the quality of the substrate on which the processing process is completed. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 is a schematic structural diagram of a substrate processing apparatus according to the present invention.

[0018] Figure 2 and Figure 3 is a side cross-sectional schematic diagram for describing an embodiment of a gas injection unit in a substrate processing apparatus according to the present invention.

[0019] Figure 4 Is a three - dimensional exploded view of the top electrode and the bottom electrode in the substrate processing apparatus according to the present invention.

[0020] Figure 5 And Figure 6 Is a side - sectional view of the top electrode and the bottom electrode shown along the cutting plane line I - I in Figure 4 .

[0021] Figure 7 Is a plan view of the substrate support part in the substrate processing apparatus according to the present invention.

[0022] Figure 8 Is a side - sectional view of the top electrode and the bottom electrode shown along the cutting plane line II - II in Figure 4 . Detailed Description of the Preferred Embodiments

[0023] Hereinafter, embodiments of a substrate processing apparatus according to the present invention will be described in detail with reference to the accompanying drawings. Figures 1 to 3 Is a side - sectional view shown along the cutting plane line I - I in Figure 4 .

[0024] Please refer to Figure 1 And Figure 2 , the substrate processing apparatus 1 according to the present invention performs a processing process on the substrate S. The substrate S can be a glass substrate, a silicon substrate, a metal substrate, etc. The substrate processing apparatus 1 according to the present invention can perform processing processes such as a deposition process of depositing a thin film on the substrate S and an etching process of removing a part of the thin film deposited on the substrate S. Hereinafter, embodiments of the substrate processing apparatus 1 according to the present invention that performs a processing process will be mainly described, but it is obvious to those skilled in the art that embodiments of the substrate processing apparatus 1 according to the present invention that perform other processing processes such as an etching process can be easily derived.

[0025] The substrate processing apparatus 1 according to the present invention may include a chamber 2, a substrate support part 3, and a gas injection unit 4.

[0026] <Chamber>

[0027] Please refer to Figure 1 , the chamber 2 provides a processing space 100. In the processing space 100, processing processes such as a deposition process or an etching process can be performed on the substrate S. The processing space 100 can be provided in the chamber 2. An exhaust port (not shown) for discharging gas from the processing space 100 can be coupled to the chamber 2. The substrate support part 3 and the gas injection unit 4 can be installed in the chamber 2.

[0028] <Substrate Support Part>

[0029] Please refer to Figure 1, the substrate support portion 3 supports the substrate S. The substrate support portion 3 can support one substrate S or can support multiple substrates S. In the case where multiple substrates S are supported by the substrate support portion 3, the processing process can be performed on the multiple substrates S at one time. The substrate support portion 3 can be coupled to the cavity 2. The substrate support portion 3 can be coupled to the interior of the cavity 2.

[0030] <Gas injection unit>

[0031] Please refer to Figure 1 , the gas injection unit 4 injects gas toward the substrate support portion 3. The gas injection unit 4 can be connected to the gas supply unit 40. Therefore, the gas injection unit 4 can inject the gas supplied from the gas supply unit 40 toward the substrate support portion 3. The gas injection unit 4 can be coupled to the cavity 2. The gas injection unit 4 can be disposed opposite to the substrate support portion 3. The processing space 100 can be provided between the gas injection unit 4 and the substrate support portion 3. The gas injection unit 4 can be coupled to the cover body. The cover body is coupled to the cavity 2 to shield the top of the cavity 2.

[0032] The gas injection unit 4 can include a first gas flow path 41 and a second gas flow path 42.

[0033] The first gas flow path 41 is for injecting a first gas. One side of the first gas flow path 41 can be connected to the gas supply unit 40 through a pipeline or a hose. The other side of the first gas flow path 41 can communicate with the processing space 100. Therefore, the first gas supplied from the gas supply unit 40 can flow along the first gas flow path 41 and then can be injected into the processing space 100 through the first gas flow path 41. The first gas flow path 41 can serve as a path for the first gas to flow and can serve as an injection hole for injecting the first gas into the processing space 100.

[0034] The second gas flow path 42 is for injecting a second gas. The second gas and the first gas can be different gases. For example, when the first gas is a source gas, the second gas can be a reaction gas. One side of the second gas flow path 42 can be connected to the gas supply unit 40 through a pipeline or a hose. The other side of the second gas flow path 42 can communicate with the processing space 100. Therefore, the second gas supplied from the gas supply unit 40 can flow along the second gas flow path 42 and then can be injected into the processing space 100 through the second gas flow path 42. The second gas flow path 42 can serve as a path for the second gas to flow and can serve as an injection hole for injecting the second gas into the processing space 100.

[0035] The second gas flow path 42 and the first gas flow path 41 can be spatially separated from each other. Therefore, the second gas supplied from the gas supply unit 40 to the second gas flow path 42 can be ejected into the processing space 100 without passing through the first gas flow path 41. The first gas supplied from the gas supply unit 40 to the first gas flow path 41 can be ejected into the processing space 100 without passing through the second gas flow path 42. The second gas flow path 42 and the first gas flow path 41 can eject gas toward different parts in the processing space 100.

[0036] Please refer to Figure 2 and Figure 3 , the gas ejection unit may include a top electrode 43 and a bottom electrode 44.

[0037] The top electrode 43 may be disposed above the substrate support 3 and opposed to the substrate support 3. The top electrode 43 may be grounded and thus may serve as a ground electrode. The top electrode 43 may include the first gas flow path 41 and the second gas flow path 42. Therefore, the top electrode 43 can eject the first gas through the first gas flow path 41 and can eject the second gas through the second gas flow path 42. The first gas flow path 41 and the second gas flow path 42 may be spatially separated from each other in a portion inside the top electrode 43.

[0038] The first gas flow path 41 may include a first connection hole 411 connected to the gas supply unit 40 and a plurality of first ejection holes 412 connected to the first connection hole 411. The first connection hole 411 and the first ejection holes 412 may be formed inward from the top electrode 43. One side of each first ejection hole 412 may communicate with the first connection hole 411, and the other side of each first ejection hole 412 may communicate with the processing space 100. Therefore, the first gas supplied by the gas supply unit 40 can flow along the first connection hole 411 and then can be ejected into the processing space 100 through the first ejection holes 412.

[0039] The second gas flow path 42 may include a second connection hole 421 connected to the gas supply unit 40 and a plurality of second ejection holes 422 connected to the second connection hole 421. The second connection hole 421 and the second ejection holes 422 may be formed inward from the top electrode 43. One side of each second ejection hole 422 may communicate with the second connection hole 421, and the other side of each second ejection hole 422 may communicate with the processing space 100. Therefore, the second gas supplied by the gas supply unit 40 can flow along the second connection hole 421 and then can be ejected into the processing space 100 through the second ejection holes 422.

[0040] The bottom electrode 44 is disposed between the top electrode 43 and the substrate support portion 3. The bottom electrode 44 can be separated from the top electrode 43 and can be disposed below the top electrode 43. An insulating member (not shown) for partial insulation can be disposed between the bottom electrode 44 and the top electrode 43. A radio frequency power supply can be applied to the bottom electrode 44. When the top electrode 43 is grounded and the radio frequency power supply is applied to the bottom electrode 44, plasma can be generated. Therefore, the gas injection unit 4 can excite the gas by using the plasma and can inject the excited gas into the processing space 100.

[0041] The bottom electrode 44 can include a plurality of holes 44a. The plurality of holes 44a can be formed to penetrate the bottom electrode 44. The holes 44a can serve as paths for the gas ejected from the top electrode 43 to pass through.

[0042] As Figure 2 shown, in the case where each of the bottom surface of the top electrode 43 and the top surface of the bottom electrode 44 is formed flat, a part of the holes 44a can be disposed at positions corresponding to the first gas flow path 41. Therefore, the first gas ejected from the first gas flow path 41 can pass through these holes 44a. The other holes 44a can be disposed at positions corresponding to the second gas flow path 42. Therefore, the second gas ejected from the second gas flow path 42 can pass through the other holes 44a. Although not shown, the number of the formed holes 44a can be less than the sum of the number of the first ejection holes 412 of the first gas flow path 41 and the number of the second ejection holes 422 of the second gas flow path 42.

[0043] As Figure 3 shown, when the top electrode 43 includes a plurality of protruding electrodes 431, the holes 44a can be respectively formed at a plurality of positions corresponding to the protruding electrodes 431. The protruding electrodes 431 can protrude toward the substrate support portion 3. The protruding electrodes 431 can protrude from the bottom surface of the top electrode 43 and can be respectively inserted into the holes 44a. The first gas flow path 41 can be disposed in each of the protruding electrodes 431. In this case, the first ejection holes 412 can be formed such that one side of each of the first ejection holes 412 is connected to the first connection hole 411, and the other side of each of the first ejection holes 412 penetrates the protruding electrode 431.

[0044] Please refer to Figures 1 to 5 , the bottom electrode 44 can include a first electrode 441 and a second electrode 442.

[0045] A first radio frequency power supply is applied to the first electrode 441. A first radio frequency power supply having a first frequency can be applied to the first electrode 441. The first electrode 441 can be electrically connected to the power supply application unit 5. The power supply application unit 5 can apply a first radio frequency power supply having a first frequency to the first electrode 441. The first electrode 441 can be disposed in the first processing space 110 of the processing space 100.

[0046] A second radio frequency power supply is applied to the second electrode 442. A second radio frequency power supply having a second frequency may be applied to the second electrode 442. The second electrode 442 may be electrically connected to the power supply application unit 5. The power supply application unit 5 may apply a second radio frequency power supply having a second frequency to the second electrode 442. The second electrode 442 may be disposed in a second processing space 120 of the processing space 100. Therefore, the second electrode 442 and the first electrode 441 may be disposed at different positions in the processing space 100.

[0047] Radio frequency power supplies having different frequencies may be applied to the second electrode 442 and the first electrode 441. That is, the first frequency is different from the second frequency. Therefore, the substrate processing apparatus 1 according to the present invention may perform a processing process on the substrate S using a first radio frequency power supply having a first frequency through the first electrode 441, and may perform a processing process on the substrate S using a second radio frequency power supply having a second frequency through the second electrode 442. Accordingly, the substrate processing apparatus 1 according to the present invention may be implemented such that a first thin film layer formed when performing a processing process on the substrate S using a first radio frequency power supply having a first frequency and a second thin film layer formed when performing a processing process on the substrate S using a second radio frequency power supply having a second frequency have different characteristics. Therefore, the substrate processing apparatus 1 according to the present invention is implemented to enable the film deposition to have the advantages of each of the first thin film layer and the second thin film layer, and the disadvantages of each of the first thin film layer and the second thin film layer to be compensated for. Therefore, the substrate processing apparatus 1 according to the present invention may improve the quality of the substrate S on which the processing process is completed.

[0048] The first frequency may be higher than the second frequency. In this case, the first frequency may be a relatively high frequency compared to the second frequency, and the second frequency may be a relatively low frequency compared to the first frequency. Therefore, when a processing process is performed on the substrate S using the first radio frequency power supply having the first frequency, a first thin film layer with improved step coverage can be deposited. When a processing process is performed on the substrate S using the second radio frequency power supply having the second frequency, a second thin film layer with improved density can be deposited. As described above, the first thin film layer and the second thin film layer can be deposited, so the substrate processing apparatus 1 according to the present invention can deposit a thin film with excellent step coverage and density. Further, during the process of performing the processing process on the substrate S, the substrate S may be bent upward or downward due to stress being applied to the substrate S, and by using the first radio frequency power supply having the first frequency and the second radio frequency power supply having the second frequency, the substrate processing apparatus 1 according to the present invention can reduce the stress applied to the substrate S. Therefore, the substrate processing apparatus 1 according to the present invention can slow down the degree of bending deformation generated in the substrate S, thereby further improving the quality of the substrate S on which the processing process is completed. For example, the first frequency may be 13.56 MHz or higher and 100 MHz or lower, and the second frequency may be 10 kHz or higher and 4 MHz or lower. For example, a first radio frequency power supply of 1 kW or higher and 5 kW or lower can be applied to the first electrode 441, and a second radio frequency power supply of 1 kW or higher and 15 kW or lower can be applied to the second electrode.

[0049] The second electrode 442 and the first electrode 441 may be formed to have the same area. Therefore, in each of the case where the second radio frequency power supply having the second frequency is applied to the second electrode 442 and the case where the first radio frequency power supply having the first frequency is applied to the first electrode 441, the efficiency of performing the processing process on the substrate S can be implemented to be substantially constant. The area of the second electrode 442 may be the area corresponding to the bottom surface of the second electrode 442 facing the substrate support portion 3. The area of the first electrode 441 may be the area corresponding to the bottom surface of the first electrode 441 facing the substrate support portion 3.

[0050] Here, the first electrode 441 may include a first connection protrusion 441a. The first connection protrusion 441a may protrude upward from the top surface of the first electrode 441. The first connection protrusion 441a may be inserted into a first through-hole 432 formed in the top electrode 43. The first through-hole 432 is formed to pass through the top electrode 43. Accordingly, the first electrode 441 disposed under the top electrode 43 and the power supply application unit 5 disposed above the top electrode 43 may be electrically connected to each other through the first connection protrusion 441a inserted into the first through-hole 432. Therefore, the substrate processing apparatus 1 according to the present invention is implemented to apply a first radio frequency power supply to the first electrode 441 while preventing a short circuit from occurring in the grounded top electrode 43. Also, since the power supply application unit 5 may be disposed above the top electrode 43, the substrate processing apparatus 1 according to the present invention may improve the ease of disposing the power supply application unit 5. The power supply application unit 5 may be disposed outside the chamber 2. The power supply application unit 5 may include a first application mechanism 51 connected to the first electrode 441 so that a first radio frequency power supply can be applied to the first electrode 441. The first application mechanism 51 may be electrically connected to the first connection protrusion 441a inserted into the first through-hole 432, and thus a first radio frequency power supply having a first frequency may be applied to the first electrode 441 through the first connection protrusion 441a.

[0051] The first electrode 441 may be formed in a semi-circular plate shape. In this case, the first connection protrusion 441a may be adjacent to the center of the first electrode 441. Accordingly, the deviation in the distance between the first connection protrusion 441a and a plurality of portions of the first electrode 441 disposed in different directions with respect to the center of the first electrode 441 may be reduced. Therefore, the substrate processing apparatus 1 according to the present invention may improve the uniformity of the first radio frequency power supply applied to a plurality of portions of the first electrode 441 disposed in different directions with respect to the center of the first electrode 441. The first connection protrusion 441a may be disposed at the center of the first electrode 441.

[0052] The second electrode 442 may include a second connection protrusion 442a. The second connection protrusion 442a may protrude upward from the top surface of the second electrode 442. The second connection protrusion 442a may be inserted into a second through-hole 433 formed in the top electrode 43. The second through-hole 433 is formed to penetrate the top electrode 43 at a position separated from the first through-hole 432. Accordingly, the second electrode 442 disposed under the top electrode 43 and the power supply applying unit 5 disposed above the top electrode 43 may be electrically connected to each other through the second connection protrusion 442a inserted into the second through-hole 433. Accordingly, the substrate processing apparatus 1 according to the present invention is implemented to apply a second radio frequency power supply to the second electrode 442 while preventing a short circuit from occurring in the grounded top electrode 43. The power supply applying unit 5 may include a second applying mechanism 52 connected to the second electrode 442 so that the second radio frequency power supply can be applied to the second electrode 442. The second applying mechanism 52 may be electrically connected to the second connection protrusion 442a inserted into the second through-hole 433, and thus the second radio frequency power supply having a second frequency may be applied to the second electrode 442 through the second connection protrusion 442a.

[0053] The second electrode 442 may be formed in a semicircular plate shape. In this case, the second connection protrusion 442a may be adjacent to the center of the second electrode 442. Accordingly, the deviation in the distance between the second connection protrusion 442a and a plurality of portions of the second electrode 442 disposed in different directions with respect to the center of the second electrode 442 may be reduced. Accordingly, the substrate processing apparatus 1 according to the present invention can improve the uniformity of the second radio frequency power supply applied to a plurality of portions of the second electrode 442 disposed in different directions with respect to the center of the second electrode 442. The second connection protrusion 442a may be disposed at the center of the second electrode 442.

[0054] The second electrode 442 and the first electrode 441 may be disposed at intervals from each other. An insulator 45 may be disposed between the second electrode 442 and the first electrode 441. The insulator 45 may insulate the second electrode 442 from the first electrode 441. The insulator 45 may be coupled to the top electrode 43. The insulator 45 may be coupled to the top electrode 43 and have a part protruding under the top electrode 43, and thus may be disposed between the second electrode 442 and the first electrode 441. The insulator 45 may include a first insulator 451 and a second insulator 452. The first insulator 451 and the second insulator 452 may be disposed at different positions between the second electrode 442 and the first electrode 441. The first insulator 451 and the second insulator 452 may be separated from each other with respect to the central portion of the top electrode 43.

[0055] As Figure 6As shown, the second electrode 442 and the first electrode 441 can be formed integrally. Therefore, the bottom electrode 44 can be implemented as one electrode. In this case, the power supply application unit 5 can selectively apply a radio frequency power supply to the first electrode 441 and the second electrode 442 according to a preset process sequence. The power supply application unit 5 can use the first application mechanism 51 to apply a first radio frequency power supply having a first frequency to the first electrode 441. Therefore, the first radio frequency power supply having the first frequency can be applied to the first electrode 441 and the second electrode 442, and thus a processing process using the first radio frequency power supply having the first frequency can be performed. In this case, the power supply application unit 5 does not apply a second radio frequency power supply to the second electrode 442. The power supply application unit 5 can use the second application mechanism 52 to apply a second radio frequency power supply having a second frequency to the second electrode 442. Therefore, the second radio frequency power supply having the second frequency can be applied to the second electrode 442 and the first electrode 441, and thus a processing process using the second radio frequency power supply having the second frequency can be performed.

[0056] In addition, as Figure 5 shown, in the case where the second electrode 442 and the first electrode 441 are formed to be spaced apart from each other, the power supply application unit 5 can apply a radio frequency power supply to at least one of the first electrode 441 and the second electrode 442. The power supply application unit 5 can use the first application mechanism 51 to apply a first radio frequency power supply having a first frequency to the first electrode 441, and can use the second application mechanism 52 to apply a second radio frequency power supply having a second frequency to the second electrode 442. Therefore, a processing process using the first radio frequency power supply having the first frequency can be performed in the first processing space 110, and a processing process using the second radio frequency power supply having the second frequency can be performed in the second processing space 120. The power supply application unit 5 can use the first application mechanism 51 to apply a first radio frequency power supply having a first frequency to the first electrode 441, and can refrain from using the second application mechanism 52 to apply a second radio frequency power supply to the second electrode 442. Also, the power supply application unit 5 can use the second application mechanism 52 to apply a second radio frequency power supply having a second frequency to the second electrode 442, and can refrain from using the first application mechanism 51 to apply a first radio frequency power supply to the first electrode 441.

[0057] Please refer to Figures 1 to 7 , the substrate processing apparatus 1 according to the present invention may include a rotation unit 7.

[0058] The rotation unit 7 rotates the substrate support portion 3. The rotation unit 7 can rotate the substrate support portion 3 relative to the rotation axis 3a so that the substrate S supported by the substrate support portion 3 rotates relative to the rotation axis 3a. Accordingly, the substrate S supported by the substrate support portion 3 can pass through the area under the first electrode 441 and the area under the second electrode 442. Accordingly, a processing process using the first frequency can be performed on the substrate S passing through the area under the first electrode 441, and a processing process using the second frequency can be performed on the substrate S passing through the area under the second electrode 442. That is, as the substrate S sequentially passes through the first processing space 110 and the second processing space 120, a processing process using radio frequency power sources having different frequencies can be performed on the substrate S. In this case, the power supply unit 5 can apply a first radio frequency power source having the first frequency to the first electrode 441 and can apply a second radio frequency power source having the second frequency to the second electrode 442.

[0059] In addition, in the case where the power supply unit 5 applies a first radio frequency power source having the first frequency to the first electrode 441 and does not apply a second radio frequency power source to the second electrode 442, a processing process using the first frequency can be performed only when the substrate S supported by the substrate support portion 3 passes through the area under the first electrode 441. In the case where the power supply unit 5 applies a second radio frequency power source having the second frequency to the second electrode 442 and does not apply a first radio frequency power source to the first electrode 441, a processing process using the second frequency can be performed only when the substrate S supported by the substrate support portion 3 passes through the area under the second electrode 442.

[0060] Please refer to Figures 1 to 8 , the substrate processing apparatus 1 according to the present invention may include a detection unit 6.

[0061] The detection unit 6 is arranged to be inserted into the top electrode 43 and the bottom electrode 44. The detection unit 6 can be arranged between the first electrode 441 and the second electrode 442. A detection hole 61 can be formed in the detection unit 6. The detection hole 61 can be formed to penetrate the detection unit 6. Accordingly, the substrate processing apparatus 1 according to the present invention is implemented to be able to check the inside of the cavity 2 through the detection hole 61 outside the cavity 2. For example, the substrate processing apparatus 1 according to the present invention can be implemented to detect the temperature of the substrate S passing through the area under the detection hole 61 through the detection hole 61. The substrate processing apparatus 1 according to the present invention can be implemented to detect the degree of deformation of the substrate S passing through the area under the detection hole 61 through the detection hole 61. A transparent window 62 including the detection hole 61 can be coupled to the top end of the detection unit 6.

[0062] The detection unit 6 can be inserted into the first insulating member 451. The detection unit 6 can be formed of an insulating material. In this case, the detection unit 6 can be implemented to have an insulating function of insulating the first electrode 441 from the second electrode 442 and a detection function using the detection hole 61. In the case where the detection unit 6 is formed of an insulating material, the substrate processing apparatus 1 according to the present invention can be implemented such that the detection unit 6 insulates the first electrode 441 from the second electrode 442 without the first insulating member 451.

[0063] The present invention as described above is not limited to the above embodiments and drawings, and those skilled in the art will clearly recognize that various modifications, deformations, and substitutions can be made without departing from the scope and spirit of the present invention.

Claims

1. An apparatus for processing a substrate, the apparatus comprising: A chamber that provides a processing space; A substrate support portion that supports one or more substrates in the chamber; A top electrode; And A bottom electrode disposed between the top electrode and the substrate support portion, the bottom electrode being separated from the top electrode, Wherein The top electrode injects a first gas through a first gas flow path and injects a second gas through a second gas flow path that is spatially separated from the first gas flow path, The bottom electrode has a plurality of holes through which the first gas and the second gas pass, The bottom electrode comprises: A first electrode in the shape of a semi-circular plate, to which a first radio frequency power source having a first frequency is applied; and A second electrode in the shape of a semi-circular plate, to which a second radio frequency power source having a second frequency different from the first frequency is applied, The first electrode and the second electrode are disposed at different positions in the processing space to perform a processing process using the first radio frequency power source and a processing process using the second radio frequency power source on the substrate in the processing space.

2. The apparatus according to claim 1, wherein the first electrode and the second electrode are formed to have the same area.

3. The apparatus according to claim 1, wherein the first frequency is higher than the second frequency.

4. The apparatus according to claim 3, wherein The first frequency is 13.56 MHz or higher and 100 MHz or lower, and The second frequency is 10 kHz or higher and 4 MHz or lower.

5. The apparatus according to claim 1, wherein an insulating member is disposed between the first electrode and the second electrode.

6. The apparatus according to claim 1, wherein The top electrode includes a plurality of protruding electrodes that protrude toward the substrate support portion, and The first gas flow path is disposed in each of the protruding electrodes.

7. The apparatus according to claim 6, wherein The plurality of protruding electrodes of the top electrode are respectively inserted into the plurality of holes of the bottom electrode.

8. The apparatus according to claim 1, further comprising a rotation unit that rotates the substrate support portion, Wherein The rotation unit rotates the substrate support portion such that the substrate supported by the substrate support portion passes through a region under the first electrode and a region under the second electrode, A processing process using the first frequency is performed on the substrate passing through the region under the first electrode, and A processing process using the second frequency is performed on the substrate passing through the region under the second electrode.

9. The apparatus according to claim 1, wherein The first radio frequency power source of 1 kW or higher and 5 kW or lower is applied to the first electrode, and The second radio frequency power source of 1 kW or higher and 15 kW or lower is applied to the second electrode.

10. The apparatus according to claim 1, further comprising a first through hole passing through the top electrode and a second through hole passing through the top electrode at a position separated from the first through hole, Wherein The first electrode includes a first connection convex portion, the first connection convex portion is inserted into the first through hole and connected to a first application mechanism for applying the first radio frequency power supply through the first connection convex portion, and The second electrode includes a second connection convex portion, the second connection convex portion is inserted into the second through hole and connected to a second application mechanism for applying the second radio frequency power supply through the second connection convex portion.

11. The device according to claim 8, further comprising a detection unit disposed between the first electrode and the second electrode, and a detection hole formed through the detection unit, wherein the detection unit is inserted into the top electrode and the bottom electrode, and the rotation unit rotates the substrate support portion so that the substrate passes through an area below the detection hole.

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