Electronic device

Abstract

An electronic device capable of reducing a possibility of malfunction is provided. The electronic device includes a first substrate including a driving circuit, a second substrate including a light emitting unit driven by the driving circuit and mounted at one surface side of the first substrate, and a light shielding unit disposed on the first substrate and shielding light emitted by the light emitting unit for at least a portion of the driving circuit.

Description

Technical Field

[0001] This disclosure relates to an electronic device. Background Technology

[0002] As a type of semiconductor laser, surface-emitting lasers such as vertical-cavity surface-emitting lasers (VCSELs) are known (see, for example, Patent Documents 1 and 2). Typically, in a light-emitting device using a surface-emitting laser, multiple light-emitting elements are arranged in a two-dimensional array on the front or rear surface of a substrate, and a lens is disposed thereon. Light emitted from the multiple light-emitting elements is directed to the outside of the light-emitting device through the lens.

[0003] List of cited references

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2004-526194 (Translation of PCT Application)

[0006] Patent Document 2: Japanese Patent Application Publication No. 2020-20680 Summary of the Invention

[0007] The technical problem that the invention aims to solve

[0008] Patent Document 2 Figure 7 Disclosed is a configuration in which a flip chip having circuitry as a light-emitting unit is formed on a chip having circuitry as a driving unit. In this configuration, there is a possibility that a portion of the light emitted from the light-emitting unit may be reflected by the surface of a lens and incident on the driving unit. The driving unit has elements (e.g., bipolar transistors) each including a pn junction surface. When light shines on these elements, a photovoltaic effect occurs, the characteristics of the elements change, and there is a possibility that the driving unit may malfunction.

[0009] This disclosure is made in view of this situation, and the purpose of this disclosure is to provide an electronic device that can reduce the possibility of failure.

[0010] Solutions to technical problems

[0011] An electronic device according to one aspect of the present disclosure includes: a first substrate, the first substrate including a driving circuit; a second substrate, the second substrate including a light-emitting unit driven by the driving circuit, and the second substrate being mounted on a surface side of the first substrate; and a light-shielding unit disposed on the first substrate and configured to shield light emitted by the light-emitting unit from at least a portion of the driving circuit.

[0012] Therefore, even if a portion of the light emitted from the light-emitting unit (e.g., infrared light) is reflected by the lens surface and guided to a portion of the driving circuit (e.g., bias circuit), the infrared light is still blocked by the light-shielding unit. The light-shielding unit can reduce the photovoltaic effect occurring on the pn junction surface of the components (e.g., bipolar transistors, etc.) included in the bias circuit, and can reduce changes in component characteristics due to the photovoltaic effect. Therefore, the light-shielding unit can reduce the likelihood of the driving circuit malfunctioning.

[0013] An electronic device according to another aspect of this disclosure includes: a first substrate, the first substrate including a driving circuit; a second substrate, the second substrate including a light-emitting unit driven by the driving circuit, and the second substrate mounted on a surface side of the first substrate; and a peripheral light-shielding unit, the peripheral light-shielding unit having light-shielding properties for light emitted by the light-emitting unit. The first substrate includes a wire bonding pad electrode disposed on a surface side of the first substrate; and a protective film disposed on a surface side of the first substrate and having an opening exposing the surface of the wire bonding pad electrode. The peripheral light-shielding unit is disposed around the wire bonding pad electrode.

[0014] Therefore, even if a portion of the light emitted from the light-emitting unit (e.g., infrared light) is reflected by the lens surface and guided to the periphery of the wiring connection pad electrode, this infrared light is still blocked by the peripheral light-shielding unit. Thus, the peripheral light-shielding unit reduces light entering the first substrate from the periphery of the wiring connection electrode. Therefore, the peripheral light-shielding unit reduces the likelihood of the drive circuit malfunctioning. Attached Figure Description

[0015] Figure 1 This is a block diagram illustrating an example configuration of a ranging device according to a first embodiment of the present disclosure.

[0016] Figure 2 This is a cross-sectional view showing a structural example of a ranging device according to a first embodiment of the present disclosure.

[0017] Figure 3 This is a block diagram illustrating an example configuration of a drive circuit according to a first embodiment of the present disclosure.

[0018] Figure 4 This is a cross-sectional view showing a structural example of a VCSEL mount according to a first embodiment of the present disclosure.

[0019] Figure 5This is a cross-sectional view showing a configuration example of a VCSEL mount according to a first embodiment of the present disclosure.

[0020] Figure 6 This is a cross-sectional view showing a configuration example of a VCSEL mount according to a first embodiment of the present disclosure, variant 2.

[0021] Figure 7 This is a cross-sectional view showing a configuration example of a VCSEL mount according to a first embodiment of the present disclosure, variant 3.

[0022] Figure 8A This is a cross-sectional view showing a configuration example of a VCSEL mount according to a first embodiment of the present disclosure, variant 4A.

[0023] Figure 8B This is a cross-sectional view showing a configuration example of a VCSEL mount according to a first embodiment of the present disclosure, variant 4B.

[0024] Figure 9A This is a cross-sectional view showing a configuration example of a VCSEL mount according to a first embodiment of the present disclosure, variant 5A.

[0025] Figure 9B This is a cross-sectional view showing a configuration example of a VCSEL mount according to a first embodiment of the present disclosure, variant 5B.

[0026] Figure 10 This is a plan view showing a structural example of a VCSEL mount according to a second embodiment of the present disclosure.

[0027] Figure 11 It shows Figure 10 The diagram shows an enlarged plan view of the wire bonding (WB) pad electrode and its surrounding portion.

[0028] Figure 12 This is a cross-sectional view showing an example of the configuration of a VCSEL mount according to a second embodiment of the present disclosure.

[0029] Figure 13 This is a cross-sectional view showing a configuration example 1 of a VCSEL mount according to a third embodiment of the present disclosure.

[0030] Figure 14 This is a cross-sectional view showing a configuration example 2 of a VCSEL mount according to a third embodiment of the present disclosure.

[0031] Figure 15 This is a cross-sectional view showing a configuration example 3 of a VCSEL mount according to a third embodiment of the present disclosure.

[0032] Figure 16This is a cross-sectional view showing a configuration example 1 of a VCSEL mount according to the fourth embodiment of this disclosure.

[0033] Figure 17 It shows Figure 16 The enlarged plan view of the WB pad electrode and its surrounding area is shown.

[0034] Figure 18 This is a plan view showing a modified example of the placement of an opaque component.

[0035] Figure 19 This is a cross-sectional view showing a configuration example 2 of a VCSEL mount according to the fourth embodiment of this disclosure.

[0036] Figure 20 This is a cross-sectional view showing a configuration example 3 of a VCSEL mount according to the fourth embodiment of this disclosure.

[0037] Figure 21 This is a cross-sectional view showing a configuration example 4 of a VCSEL mount according to the fourth embodiment of this disclosure. Detailed Implementation

[0038] The first embodiment of this disclosure will be described below with reference to the accompanying drawings. In the description of the drawings below, identical or similar parts are indicated by identical or similar reference numerals. However, it should be noted that the drawings are schematic, and the relationships between thickness and planar dimensions, the thickness ratios of each layer, etc., differ from the actual figures. Therefore, specific thicknesses and dimensions should be determined based on the description below. Furthermore, it goes without saying that parts with different dimensional relationships and ratios are included between the drawings.

[0039] The definitions of directions such as up and down in the following description are merely for ease of explanation and do not limit the technical concept of this disclosure. For example, when observing an object rotated 90°, the up and down sides are understood as being converted to left and right, and when observing an object rotated 180°, the top and bottom parts are understood as being inverted.

[0040] In the following description, the terms X-axis, Y-axis, and Z-axis are used to describe directions. For example, the X-axis and Y-axis are parallel to the upper surface 42a of the laser diode driver (LDD) substrate 42. The X-axis and Y-axis are also referred to as horizontal directions. The Z-axis is perpendicular to the upper surface 42a. The X-axis, Y-axis, and Z-axis are perpendicular to each other.

[0041] <First Implementation Plan>

[0042] Figure 1 This is a block diagram illustrating an example configuration of a ranging device 100 according to a first embodiment of the present disclosure. For example... Figure 1 As shown, the ranging device 100 according to the first embodiment of this disclosure (an example of the "electronic device" of this disclosure) includes a light-emitting device 1, a camera device 2, and a control device 3. The ranging device 100 illuminates a subject with light emitted from the light-emitting device 1, receives the light reflected from the subject through the camera device 2 to capture an image of the subject, and measures (calculates) the distance to the subject using the image signal output from the camera device 2 through the control device 3. The light-emitting device 1 serves as the light source for the camera device 2 to capture an image of the subject.

[0043] The light-emitting device 1 includes a light-emitting unit 11, a driving circuit 12, a power supply circuit 13, and a light-emitting side optical system 14. The camera device 2 includes an image sensor 21, an image processing unit 22, and a camera-side optical system 23. The control device 3 includes a ranging unit 31.

[0044] The light-emitting unit 11 emits a laser for illuminating the subject. The light-emitting unit 11 includes a VCSEL. For example, the light-emitting unit 11 includes multiple light-emitting elements arranged in a two-dimensional array, and each light-emitting element has a VCSEL structure. The subject is illuminated by light emitted from these light-emitting elements. The light emitted from the light-emitting elements is, for example, infrared light. The light-emitting unit 11 is disposed in a chip called a laser diode (LD) chip 41.

[0045] The driving circuit 12 is the circuit that drives the light-emitting unit 11. The power supply circuit 13 is the circuit that generates the power supply voltage for the driving circuit 12. For example, the ranging device 100 generates a power supply voltage based on the input voltage supplied by a battery (not shown) through the power supply circuit 13, supplies the generated power supply voltage to the driving circuit 12, and drives the light-emitting unit 11 through the driving circuit 12. The battery may be disposed inside the ranging device 100 or may be disposed outside the ranging device 100. Furthermore, the driving circuit 12 is disposed in a substrate called a laser diode driver (LDD) substrate 42.

[0046] The light-emitting side optical system 14 includes various optical elements, and illuminates the subject with light from the light-emitting unit 11 via these optical elements. Similarly, the camera-side optical system 23 includes various optical elements, and receives light from the subject via these optical elements.

[0047] Image sensor 21 receives light from the subject via camera-side optical system 23 and converts the light into an electrical signal via photoelectric conversion. Image sensor 21 is, for example, a charge-coupled device (CCD) sensor or a complementary metal-oxide-semiconductor (CMOS) sensor. Image sensor 21 converts the electrical signal from analog to digital signal via analog-to-digital (A / D) conversion and outputs the image signal as a digital signal to image processing unit 22. In addition, image sensor 21 outputs a frame synchronization signal to driving circuit 12, and driving circuit 12, based on the frame synchronization signal, causes light-emitting unit 11 to emit light at the time corresponding to the frame period of image sensor 21.

[0048] The image processing unit 22 performs various types of image processing on the image signal output from the image sensor 21. The image processing unit 22 includes, for example, an image processing processor such as a digital signal processor (DSP).

[0049] The control device 3 controls various operations of the ranging device 100, and controls, for example, the light-emitting operation of the light-emitting device 1 and the image-capturing operation of the camera device 2. The control device 3 includes, for example, a central processing unit (CPU), a read-only memory (ROM), and a random access memory (RAM).

[0050] The ranging unit 31 measures the distance to the subject based on the image signal output from the image sensor 21 and processed by the image processing unit 22. The ranging unit 31 employs, for example, a structured light (STL) system or a time-of-flight (ToF) system as the ranging system. Furthermore, based on the aforementioned image signal, the ranging unit 31 can further measure the distance between the ranging device 100 and the subject for different parts of the subject to determine the three-dimensional shape of the subject.

[0051] Figure 2 This is a cross-sectional view showing a structural example of a ranging device 100 according to a first embodiment of the present disclosure. For example... Figure 2 As shown, the ranging device 100 includes an LD chip 41 (an example of the "second substrate" of this disclosure), the aforementioned LDD substrate 42 (an example of the "first substrate" of this disclosure), a mounting substrate 43, a heat dissipation substrate 44, a correction lens holder 45, one or more correction lenses 46 (examples of the "lenses" of this disclosure), and a plurality of bump electrodes 48. Note that in Figure 2 In this diagram, the X-axis and Y-axis correspond to the horizontal direction, and the Z-axis corresponds to the vertical direction. Furthermore, the arrow on the Z-axis points upwards, and the opposite direction corresponds to downwards.

[0052] like Figure 2As shown, the LDD substrate 42 is disposed on the mounting substrate 43 via a heat dissipation substrate 44. Furthermore, the LD chip 41 is disposed on the LDD substrate 42. For example, the LD chip 41 is flip-chip mounted on the LDD substrate 42. The mounting substrate 43 is, for example, a printed circuit board. The mounting substrate 43 is provided with... Figure 1 The image sensor 21 and image processing unit 22 are shown. The heat dissipation substrate 44 is, for example, a ceramic substrate such as an aluminum nitride (AlN) substrate.

[0053] A correction lens holder 45 is disposed on a heat sink substrate 44 to surround the LD chip 41, and holds one or more correction lenses 46 above the LD chip 41. These correction lenses 46 are included in the light-emitting side optical system 14 described above (see reference). Figure 1 A correction lens 46 is positioned facing the LDD substrate 42, with the LD chip 41 in between. From the light-emitting unit 11 of the LD chip 41 (see reference...) Figure 1 The emitted light is incident on and corrected by these corrective lenses 46, and then the light is used to illuminate the subject (see reference). Figure 1 ). Figure 2 Two correction lenses 46 held by a correction lens holder 45 are shown as an example of a first embodiment.

[0054] Multiple bump electrodes 48 are disposed on at least one of the upper surface of the LDD substrate 42 or the lower surface of the LD chip 41, and electrically connect the LDD substrate 42 and the LD chip 41. The bump electrodes 48 are made of any metal such as gold (Au), nickel (Ni) or aluminum (Al).

[0055] Furthermore, the LDD substrate 42 is provided with a light-shielding film 50 (an example of a "light-shielding unit" in this disclosure), which shields at least a portion of the driving circuit 12 from light emitted by the light-emitting unit 11 disposed in the LD chip 41. The light-shielding film 50 may be disposed on the upper surface 42a of the LDD substrate 42, or it may be disposed inside the LDD substrate 42.

[0056] In the first embodiment of this disclosure, the structure in which the LD chip 41, including a VCSEL, is flip-chip mounted on the LDD substrate 42 is referred to as the VCSEL mount 40.

[0057] Figure 3 This is a block diagram illustrating an example configuration of the drive circuit 12 according to a first embodiment of the present disclosure. Figure 3 As shown, the driving circuit 12 includes a driving light-emitting unit 11 (see reference). Figure 1The LDD substrate 42 comprises a driver circuit 60, a bias circuit 61, a clock (CLK) circuit 62, and a temperature information generation unit 63. The bias circuit 61 generates a reference current from the power supply voltage supplied by the power supply circuit 13 and supplies the generated reference current to the driver circuit 60. The CLK circuit 62 generates a clock signal for controlling the light emission timing of the light-emitting unit 11 and supplies the generated clock signal to the driver circuit 60. The temperature information generation unit 63 measures the temperature of the LDD substrate 42, generates a signal including temperature information, and supplies the generated signal to the driver circuit 60. Figure 2 As shown, since the LD chip 41 is flip-chip mounted on the LDD substrate 42, the temperature of the LDD substrate 42 is related to the temperature of the LD chip 41.

[0058] The driver circuit 60 controls the light emission timing of the light-emitting unit 11 based on the provided clock signal. Furthermore, the driver circuit 60 corrects the current value to be applied to the light-emitting unit 11 based on a signal supplied from the temperature information generation unit 63. Therefore, the driver circuit 60 can reduce fluctuations in the intensity of light emitted by the light-emitting unit 11 due to temperature.

[0059] (Specific example)

[0060] Next, the structure of the VCSEL mount 40 on which the LD chip 41 is flip-chip mounted on the LDD substrate 42 will be described in more detail.

[0061] Figure 4 This is a cross-sectional view showing a structural example of a VCSEL mount 40 according to a first embodiment of the present disclosure. Figure 4 As shown, the VCSEL mount 40 includes an LDD substrate 42, an LD chip 41, and a bump electrode 48 electrically connecting the LDD substrate 42 and the LD chip 41. The LDD substrate 42 has an upper surface 42a (an example of "one surface" in this disclosure) and a lower surface 42b, and the LD chip 41 is flip-chip mounted on the upper surface 42a side via the bump electrode 48.

[0062] For example, the LDD substrate 42 has a substrate body 421 made of Si. The upper surface 42a of the LDD substrate 42 is the upper surface of the substrate body 421, and the lower surface 42b of the LDD substrate 42 is the lower surface of the substrate body 421. The substrate body 421 includes a driver circuit 60, a bias circuit 61, and a CLK circuit 62 (see reference). Figure 3 ) and temperature information generation unit 63 (refer to Figure 3 For example, driver circuit 60 and bias circuit 61 are disposed on the lower surface 42b side of substrate body 421. Driver circuit 60 and bias circuit 61 are electrically connected to each other via wiring layers (or at least a portion of wiring layers 71 to 73 described later) (not shown).

[0063] The bias circuit 61 includes a well layer 611, an npn bipolar transistor 612 disposed in the well layer 611, and a pnp bipolar transistor 613 disposed in the well layer 611.

[0064] Furthermore, the substrate body 421 is provided with a light-shielding film 50, pad electrodes 70, and multiple wiring layers 71 to 73. For example, the light-shielding film 50 and the pad electrodes 70 are disposed on the upper surface 42a of the substrate body 421. Wiring layers 71 to 73 are disposed inside the substrate body 421. The pad electrodes 70 are located above the driver circuit 60, and multiple wiring layers 71 to 73 are disposed between the driver circuit 60 and the electrode pads 70. The driver circuit 60 and the pad electrodes 70 are electrically connected to each other via multiple wiring layers 71 to 73 and through electrodes (not shown) connecting the wiring layers 71 to 73 in the vertical direction (Z-axis direction).

[0065] The light-shielding film 50 is made of a metal such as aluminum (Al) or copper (Cu) that has infrared light-shielding properties. The light-shielding film 50 covers the entire area of ​​the bias circuit 61 from the upper surface 42a side of the substrate body 421. The light-shielding film 50 can be disposed near, for example,... Figure 4 The pad electrode 70 shown can be disposed on the same layer as the pad electrode 70, or it can be disposed on a different layer than the pad electrode 70. When the light-shielding film 50 is disposed on the same layer as the pad electrode 70, the light-shielding film 50 and the pad electrode 70 can be formed simultaneously in the same step.

[0066] Bump electrode 48 is disposed on pad electrode 70. Driver circuit 60 is electrically connected to LD chip 41 via multiple wiring layers 71 to 73, pad electrode 70, and bump electrode 48. Correction lens 46 is disposed above LD chip 41 (see reference). Figure 2 ).

[0067] (Effects of the first implementation plan)

[0068] As described above, the ranging device 100 according to the first embodiment of this disclosure includes an LDD substrate 42 having a driving circuit 12, an LD chip 41 having a light-emitting unit 11 driven by the driving circuit 12, and a light-shielding film 50. The LD chip 41 is flip-chip mounted on the upper surface 42a side of the LDD substrate 42. The light-shielding film 50 is disposed on the LDD substrate 42 and shields light (e.g., infrared light) emitted from the light-emitting unit 11 from at least a portion of the driving circuit 12 (e.g., bias circuit 61).

[0069] Therefore, even when a portion of the infrared light emitted from the light-emitting unit 11 is reflected by the surface of the correction lens 46 and guided to the bias circuit 61, this infrared light is still blocked by the light-shielding film 50. Even when the LD chip 41 is flip-chip mounted on the upper surface 42a of the LDD substrate 42 and the upper part of the bias circuit 61 is not sealed with molding resin or the like (i.e., in a bare state), the light-shielding film 50 can prevent infrared light from incident on the bias circuit 61. The light-shielding film 50 can reduce the photovoltaic effect occurring on the pn junction surface of components such as bipolar transistors 612 and 613 included in the bias circuit 61, and can reduce changes in component characteristics due to the photovoltaic effect. Therefore, the light-shielding film 50 can reduce the possibility of the drive circuit 12 malfunctioning.

[0070] In the circuit of the drive circuit 12, the bias circuit 61 has the highest photosensitivity and the largest area. Therefore, in the first embodiment of this disclosure, it is particularly preferable to shield the bias circuit 61 from light. As described above, the bias circuit 61 generates a reference current, but when the bias circuit 61 is irradiated with infrared light, the characteristics of components such as bipolar transistors 612 and 613 change due to the photovoltaic effect, and the reference current fluctuates. When the fluctuation of the reference current is large, the drive circuit 12 may malfunction. By shielding the bias circuit 61 from light, the fluctuation of the reference current can be reduced, and the possibility of the drive circuit 12 malfunctioning can be reduced.

[0071] (Variation Example 1)

[0072] In the first embodiment described above, the light-shielding film 50 is arranged in a region overlapping with the bias circuit 61 in the thickness direction (e.g., the Z-axis direction) of the LDD substrate 42, and the bias circuit 61 is not arranged in other regions. However, the first embodiment of this disclosure is not limited thereto. In the first embodiment of this disclosure, in the Z-axis direction, the light-shielding film 50 may be arranged in a region overlapping with the driver circuit 60 (see reference 1). Figure 3 In the overlapping area, the light-shielding film 50 can be arranged with the CLK circuit 62 (see reference). Figure 3 In areas where they overlap, or in areas where the light-shielding film 50 may be arranged with respect to the temperature information generation unit 63 (see reference). Figure 3 In the overlapping area, the light-shielding film 50 can prevent infrared light from entering the driver circuit 60, the CLK circuit 62, and the temperature information generation unit 63.

[0073] Any of the driver circuit 60, CLK circuit 62, and temperature information generation unit 63 includes components with a pn junction surface, such as bipolar transistors or MOS transistors. However, the light-shielding film 50 can reduce the photovoltaic effect generated on the pn junction surface by blocking the incident infrared light. Therefore, the light-shielding film 50 can reduce the changes in component characteristics of any of the driver circuit 60, CLK circuit 62, and temperature information generation unit 63 due to the photovoltaic effect, and can reduce the possibility of driver circuit 12 malfunctioning.

[0074] On the upper surface 42a of the LDD substrate 42, the coverage of the light-shielding film 50 is preferably high. For example, on the upper surface 42a of the LDD substrate 42, excluding the area used for mounting the LD chip 41, the coverage per unit area of ​​the light-shielding film 50 is preferably 50% or more, more preferably 65% ​​or more, and even more preferably 80% or more. The light-shielding film 50 may be configured to cover the entire upper surface 42a of the LDD substrate 42 except for the area where the LD chip 41 is mounted (i.e., making the coverage 100%). The following... Figure 5 An example is shown where the coverage per unit area is 100%, excluding the area where the LD chip 41 is installed.

[0075] Figure 5 This is a cross-sectional view showing a configuration example of the VCSEL mount 40A according to a modified example 1 of the first embodiment of this disclosure. (See diagram below.) Figure 5 As shown, in the VCSEL mount 40A according to Modified Example 1, the light-shielding film 50 is configured to cover the entire upper surface 42a of the LDD substrate 42 except for the area where the LD chip 41 is mounted. With this configuration, the light-shielding film 50 can prevent infrared light from entering the bias circuit 61, and also prevent infrared light from entering the driver circuit 60, the CLK circuit 62, and the temperature information generation unit 63. Therefore, the light-shielding film 50 can further reduce the changes in the characteristics of the components disposed on the LDD substrate 42 due to the photovoltaic effect, and can further reduce the possibility of the driver circuit 12 malfunctioning.

[0076] (Variation Example 2)

[0077] In a first embodiment of this disclosure, some of the wiring layers 71 to 73, in addition to the light-shielding film 50, can be used as light-shielding units. The wiring layers used as light-shielding units are made of metals such as aluminum (Al) or copper (Cu) that have infrared light-shielding properties.

[0078] Figure 6 This is a cross-sectional view showing a configuration example of the VCSEL mount 40B according to a modified example 2 of the first embodiment of this disclosure. (See diagram below.) Figure 6As shown, in the VCSEL mount 40B according to Modified Example 2, for example, a portion of the wiring layer 71 extends above the bias circuit 61. The bias circuit 61 includes a first region R1 that overlaps with the light-shielding film 50 in the thickness direction (e.g., the Z-axis direction) of the LDD substrate 42 and a second region R2 that does not overlap with the light-shielding film 50 in the Z-axis direction. The wiring layer 71 covers at least a portion of the second region R2. The wiring layer 71 is made of a metal that has infrared light-shielding properties, such as aluminum (Al) or copper (Cu).

[0079] In the VCSEL mount 40B according to Modified Example 2, the light-shielding film 50 and the wiring layer 71 are offset from each other in the horizontal direction. This positional relationship between the light-shielding film 50 and the wiring layer 71 prevents infrared light from incident on the bias circuit 61. Therefore, similar to the first embodiment described above, it is possible to reduce changes in the characteristics of the components due to the photovoltaic effect and to reduce the possibility of failure in the drive circuit 12.

[0080] (Variation Example 3)

[0081] In a first embodiment of this disclosure, the bias circuit 61 is preferably disposed at a position far from the side surface 42c of the periphery of the LDD substrate 42. Figure 7 This is a cross-sectional view showing a configuration example of the VCSEL mount 40C according to a modified example 3 of the first embodiment of this disclosure. (See diagram below.) Figure 7 As shown, in the VCSEL mount 40C according to Modified Example 3, the bias circuit 61 is arranged at a position sufficiently far from the side surface 42c of the outer periphery of the LDD substrate 42. For example, the distance d from the side surface 42c of the outer periphery of the LDD substrate to the bias circuit 61 is 500 μm or more.

[0082] There is a possibility that a portion of the light reflected from the surface of the corrected lens 46 is lost through the corrected lens holder 45 (see reference). Figure 2 The light is reflected again from the inner surface of the LDD substrate 42 and incident on the outer side surface 42c of the LDD substrate 42. However, in the VCSEL mount 40c, the bias circuit 61 is arranged at a position sufficiently far from the outer side surface 42c of the LDD substrate 42, thereby reducing the likelihood of light incident from the side surface 42c reaching the bias circuit 61. This further reduces the variation in the characteristics of the bias circuit 61 due to the photovoltaic effect.

[0083] (Modification 4A, Modification 4B)

[0084] In the first embodiment of this disclosure, the driving circuit 12 (see reference 12) can also be connected to the side surface 42c of the LDD substrate 42. Figure 1 A through layer made of light-shielding material is set between them.

[0085] Figure 8A This is a cross-sectional view showing a configuration example of the VCSEL mount 40D according to a modification 4A of the first embodiment of this disclosure. (See diagram below.) Figure 8A As shown, in the VCSEL mount 40D according to Modified Example 4A, the LDD substrate 42 has a through layer 51 that penetrates the LDD substrate 42 in the thickness direction (e.g., the Z-axis direction). The through layer 51 is made of a metal that has infrared-shielding properties, such as aluminum (Al) or copper (Cu). For example, the through layer 51 is disposed between the peripheral side surface 42c of the LDD substrate 42 and the bias circuit 61, and is arranged in a ring shape along the peripheral side surface 42c.

[0086] As described above, there is a possibility that a portion of the light reflected from the surface of the corrected lens 46 is diverted by the corrected lens holder 45 (see reference). Figure 2 The light is reflected again from the inner surface of the LDD substrate 42 and incident on the outer side surface 42c of the LDD substrate 42. However, in the VCSEL mount 40D, the bias circuit 61 is shielded by the through layer 51 provided along the outer side surface 42c, thus reducing the likelihood of light incident from the side surface 42c reaching the bias circuit 61. This further reduces the characteristic changes of the bias circuit 61 due to the photovoltaic effect.

[0087] Figure 8B This is a cross-sectional view showing a configuration example of the VCSEL mount 40E according to a modified example 4B of the first embodiment of this disclosure. (See diagram below.) Figure 8B As shown, multiple through-layers 51 can be provided instead of a single through-layer. For example, two through-layers 51, or three or more through-layers 51, can be provided along the peripheral side surface 42c. With this configuration, the likelihood of light incident from the side surface 42c reaching the bias circuit 61 can be further reduced.

[0088] (Modification 5A, Modification 5B)

[0089] In the first embodiment described above, it has been stated that the light-shielding film 50 is made of a metal such as aluminum (Al) or copper (Cu). However, the first embodiment of this disclosure is not limited thereto. The light-shielding film 50 may be made of, for example, resin.

[0090] Figure 9A This is a cross-sectional view showing a configuration example of the VCSEL mount 40F according to a modification 5A of the first embodiment of this disclosure. (See diagram below.) Figure 9AAs shown, the VCSEL mount 40F according to Modified Example 5A includes a light-shielding film 52 instead of a light-shielding film 50 made of metal. The light-shielding film 52 is made of a resin that has light-shielding properties against infrared light. Even with this configuration, the light-shielding film 52 can prevent infrared light from incident on the bias circuit 61 and can reduce changes in component characteristics due to the photovoltaic effect. Therefore, the light-shielding film 52 can reduce the possibility of the drive circuit 12 malfunctioning.

[0091] Furthermore, in the first embodiment of this disclosure, such as Figure 9A As shown, the gap between the LDD substrate 42 and the LD chip 41 can be filled with insulating resin 53. Resin 53 can be referred to as an underfill material. Resin 53 can improve the reliability of the connection between the LDD substrate 42 and the LD chip 41. For example, epoxy resin can be used as resin 53.

[0092] In the VCSEL mount 40F according to Modified Example 5A, the resin 53 and the light-shielding film 52 may have the same composition. Furthermore, the resin 53 and the light-shielding film 52 can be formed simultaneously in the same step. Therefore, there is a possibility to reduce the number of steps in manufacturing the VCSEL mount 40F, and a possibility to reduce manufacturing costs.

[0093] Figure 9B This is a cross-sectional view showing a configuration example of the VCSEL mount 40G according to a modified example 5B of the first embodiment of this disclosure. (See diagram below.) Figure 9B As shown, the light-shielding film 52 can be disposed on the entire upper surface 42a of the LDD substrate 42, excluding the area where the LD chip 41 is mounted. With this configuration, the light-shielding film 52 can not only prevent infrared light from entering the bias circuit 61, but also prevent infrared light from entering the CLK circuit 62 and the temperature information generation unit 63, thereby further reducing the possibility of the drive circuit 12 malfunctioning.

[0094] <Second Implementation Plan>

[0095] In embodiments of this disclosure, the LDD substrate 42 may have wire bonding pad electrodes (WB pad electrodes), to which wires, such as gold wires, are connected. An opening is provided on the WB pad electrode exposing its surface, and the wires connect to the surface of the WB pad electrode through this opening. In embodiments of this disclosure, the light-shielding film 50 can cover not only the upper part of the drive circuit 12 but also the periphery of the wire bonding pad electrodes.

[0096] Figure 10 This is a plan view showing a structural example of a VCSEL mount 140 according to a second embodiment of this disclosure. Figure 10 As shown, with Figure 4Similar to the VCSEL mount 40 shown, the VCSEL mount 140 according to the second embodiment is a structure in which a laser diode (LD) chip 41 containing a VCSEL is flip-chip mounted on an LDD substrate 42. For example, in Figure 2 In the ranging device 100 shown, the VCSEL mount 140 replaces the VCSEL mount 40 and is arranged on the mounting base 43 via the heat dissipation base 44.

[0097] like Figure 10 As shown, the LDD substrate 42 has a plurality of WB pad electrodes 110 (an example of "wire bonding pad electrodes" of this disclosure) disposed on the upper surface 42a side of the LDD substrate 42, and a protective film 120 disposed on the upper surface 42a side of the LDD substrate 42. The WB pad electrodes 110 are pad electrodes for connecting wirings (not shown) such as gold wires. In a plan view from the normal direction (e.g., the Z-axis direction) of the upper surface 42a of the LDD substrate 42, the plurality of WB pad electrodes 110 are disposed on the periphery of the LDD substrate 42 and arranged at regular intervals to form a rectangular frame along the periphery of the LDD substrate 42.

[0098] Figure 11 It shows Figure 10 An enlarged plan view of the WB pad electrode 110 and its surrounding area. Figure 12 This is a cross-sectional view showing an example of the configuration of a VCSEL mount 140 according to a second embodiment of the present disclosure. Figure 12 The diagram shows the section cut along line A-A'. Figure 10 and Figure 11 The cross-section shown is a plan view. Note that it is taken along line B-B'. Figure 11 The cross-section of the plan view shown has a section cut along line A-A'. Figure 11 The cross-sections shown in the plan view have similar structures.

[0099] like Figure 11 and Figure 12 As shown, the protective film 120 includes an opening H120 exposing the surface of the WB pad electrode 110. (As...) Figure 11 As shown, in the plan view from the Z-axis direction, the opening H120 is located inside the WB pad electrode 110, and the bottom surface of the opening H120 is the surface of the WB pad electrode 110.

[0100] like Figure 11 and Figure 12 As shown, a light-shielding film 50 is disposed on a protective film 120. The light-shielding film 50 is also provided with an opening H50. The opening H50 in the light-shielding film 50 is located above the WB pad electrode 110 and communicates with the opening H120 in the protective film 120.

[0101] The WB pad electrode 110 is made of, for example, aluminum (Al) or an aluminum alloy containing Al. The protective film 120 includes, for example, a silicon oxide film (SiO2 film) 121 and a silicon nitride film (SiN) 122 disposed on the SiO2 film 121. The light-shielding film 50 includes, for example, titanium (Ti) and gold (Au) disposed on the titanium (Ti).

[0102] like Figure 12 As shown, multiple (e.g., 7) wirings M1 to M7 are stacked along the Z-axis direction via interlayer insulating film 130 below the WB pad electrode 110. For example, wirings M6 and M7 are power lines. Wirings M1 to M5 are signal lines. At least some of the wirings M1 to M7 located below the WB pad electrode 110 may be virtual wirings that are not electrically connected to components such as transistors.

[0103] In the VCSEL mount 140 according to the second embodiment, not only the upper part of the drive circuit 12, but also the periphery of the WB pad electrode 110 is covered by a light-shielding film 50. Even if a portion of the light emitted from the light-emitting unit (e.g., infrared light) is reflected by the lens surface and guided to the periphery of the WB pad electrode 110, this light (ambient light) is blocked by the light-shielding film 50. Therefore, the light-shielding film 50 can reduce the amount of light entering the LDD substrate 42 from the periphery of the WB pad electrode 110, and can further reduce the possibility of the drive circuit 12 malfunctioning.

[0104] In the second embodiment, a portion of the light-shielding film 50 arranged around the WB pad electrode 110 is an example of the “peripheral light-shielding unit” of this disclosure.

[0105] <Third Implementation Plan>

[0106] As described in the second embodiment, an opening H120 for exposing the surface of the WB pad electrode 110 is provided on the WB pad electrode 110, and wiring is connected to the surface of the WB pad electrode 110 through the opening H120. Since the side surface of the opening H120 is exposed from the light-shielding film 50, there is a possibility that this side surface may become an entrance for light to enter the LDD substrate 42. To reduce this possibility, in the embodiments of this disclosure, the side surface of the opening H120 may be covered with a peripheral light-shielding unit. As a aspect of this, configuration examples 1 to 3 of the third embodiment will be described.

[0107] (Example 1)

[0108] Figure 13 This is a cross-sectional view showing a configuration example (Configuration Example 1) of the VCSEL mount 140A according to the third embodiment of this disclosure. Figure 13As shown, in the VCSEL mount 140A, a light-shielding resin 210 (an example of the “peripheral light-shielding unit” of this disclosure) is applied around the opening H120.

[0109] The light-shielding resin 210 is an insulating resin. Furthermore, the light-shielding resin 210 has light-shielding properties against light emitted from the light-emitting unit 11. For example, the light-shielding resin 210 is a dark or black insulating resin and has light-shielding properties against infrared light emitted from the light-emitting unit 11. The light-shielding resin 210 may be a resin referred to as a black matrix resin.

[0110] like Figure 13 As shown, the light-shielding resin 210 continuously covers the light-shielding film 50, the side surface s2 of the opening H50 in the light-shielding film 50, the top of the protective film 120 exposed from below the light-shielding film 50, the side surface s1 of the opening H120 in the protective film 120, and the top of the WB pad electrode 110 located near the side surface s1 of the opening H120.

[0111] The interface between the WB pad electrode 110 and the protective film 120, and the side surface s1 of the opening H120, can be referred to as the entrance for light (ambient light) from the opening H120 to the LDD substrate 42. Furthermore, the interface between the protective film 120 and the light-shielding film 50 can be referred to as the entrance for ambient light from the opening H50 into the LDD substrate 42. The light-shielding resin 210 covers and seals these entrances.

[0112] In the VCSEL mount 140A according to Configuration Example 1 of the third embodiment, the light-shielding resin 210 covers the side surfaces s1 and s2 of the openings H120 and H50. Therefore, the light-shielding resin 210 can prevent ambient light from entering the LDD substrate 42 through the openings H120 and H50, and can shield at least a portion of the drive circuit 12 (e.g., the bias circuit 61) from ambient light. Therefore, the light-shielding resin 210 can further reduce the possibility of the drive circuit 12 malfunctioning.

[0113] The light-shielding resin 210 preferably covers the entire side surface s1 of the opening H120. Therefore, the light-shielding resin 210 easily blocks the entry of ambient light present on the side surface s1 of the opening H120.

[0114] Note that the configuration example 1 of the third embodiment is not limited to the above. The light-shielding resin 210 can be arranged to cover only a portion of the side surface s1 of the opening H120, rather than the entire side surface s1. For example, the light-shielding resin 210 can be applied to cover the side surface s1 of the opening H120 closest to the drive circuit 12, but not the side surface furthest from the drive circuit 12. In this case, compared to not covering the side surface closest to the drive circuit 12 with the light-shielding resin 210, there is a possibility of reducing ambient light entering the drive circuit 12.

[0115] (Example 2)

[0116] Figure 14 This is a cross-sectional view showing a configuration example (configuration example 2) of the VCSEL mount 140B according to the third embodiment of this disclosure. Figure 14 In the VCSEL mount 140B shown, the WB pad electrode 110 has a thick film portion 111 (an example of the "peripheral light-shielding unit" of this disclosure), which has an increased thickness inside the opening H120. For example, the WB pad electrode 110 includes a thick film portion 111 located inside the opening H120 and other portions 112 located outside the opening H120. The thick film portion 111 and the other portions 112 are made of the same material and are integrally formed. In the VCSEL mount 140B, the thick film portion 111 of the WB pad electrode 110 covers and closes the side surface s1 of the opening H120, which serves as an entrance for ambient light, and the interface between the WB pad electrode 110 and the protective film 120.

[0117] Therefore, the thick film portion 111 of the WB pad electrode 110 can prevent ambient light from entering the LDD substrate 42 through the opening H120, and can shield at least a portion of the drive circuit 12 (e.g., the bias circuit 61) from ambient light. Therefore, the thick film portion 111 can further reduce the possibility of the drive circuit 12 malfunctioning.

[0118] The thick film portion 111 preferably covers the entire side surface s1 of the opening H120. Therefore, the thick film portion 111 easily blocks the entry of ambient light present on the side surface s1 of the opening H120.

[0119] Note that the configuration example 2 of the third embodiment is not limited to the above. The thick film portion 111 can be arranged to cover only a portion of the side surface s1 of the opening H120, rather than the entire side surface s1. For example, the thick film portion 111 can be formed to cover the side surface s1 of the opening H120 closest to the drive circuit 12, and not cover the side surface furthest from the drive circuit 12. In this case, compared to the case where the side surface closest to the drive circuit 12 is not covered by the thick film portion 111, there is a possibility of reducing the amount of ambient light entering the drive circuit 12.

[0120] (Example 3)

[0121] Figure 15 This is a cross-sectional view showing a configuration example (configuration example 3) of the VCSEL mount 140C according to the third embodiment of this disclosure. Figure 15 The VCSEL mount 140C shown includes a sidewall 211 disposed on the side surface s1 of the opening H120 in the protective film 120 and a sidewall 212 disposed on the side surface s2 of the opening H50 in the light-shielding film 50. Each of the sidewalls 211 and 212 is an example of the "peripheral light-shielding unit" of this disclosure.

[0122] Sidewalls 211 and 212 are made of insulating resin. Furthermore, sidewalls 211 and 212 have light-shielding properties against light emitted from the light-emitting unit 11. For example, sidewalls 211 and 212 are made of dark or black resin and have light-shielding properties against infrared light emitted from the light-emitting unit 11. The resin constituting sidewalls 211 and 212 can be made of a resin called a black matrix resin.

[0123] For example, sidewalls 211 and 212 are formed by coating an insulating dark or black resin onto the upper surface 42a of the LDD substrate 42, which has openings H120 and H50, and then etching back the coated resin.

[0124] In the VCSEL mount 140C, sidewall 211 covers and closes the side surface s1 of the opening H120, which serves as an ambient light inlet, and the interface between the WB pad electrode 110 and the protective film 120. Similarly, in the VCSEL mount 140C, sidewall 212 covers and closes the interface between the protective film 120 and the light-shielding film 50, which also serve as an ambient light inlet. Therefore, sidewalls 211 and 212 can prevent ambient light from entering the LDD substrate 42 from the openings H120 and H50, and can shield at least a portion of the drive circuit 12 (e.g., the bias circuit 61) from ambient light. Therefore, sidewalls 211 and 212 can further reduce the possibility of the drive circuit 12 malfunctioning.

[0125] Sidewall 211 preferably covers the entire side surface s1 of opening H120. Therefore, sidewall 211 easily blocks the entry of ambient light present on the side surface s1 of opening H120. Similarly, sidewall 212 preferably covers the entire side surface s2 of opening H50. Therefore, sidewall 211 easily blocks the entry of ambient light present near the side surface s2 of opening H50.

[0126] Note that the configuration example 3 of the third implementation scheme is not limited to the above. For example, only one of sidewall 211 and sidewall 212 may be provided.

[0127] Furthermore, the sidewall 211 can be arranged to cover only a portion of the side surface s1 of the opening H120, rather than the entire side surface s1. For example, the sidewall 211 can be formed to cover the side surface s1 of the opening H120 closest to the drive circuit 12, but not the side surface furthest from the drive circuit 12. In this case, compared to not covering the side surface closest to the drive circuit 12 with the sidewall 211, there is a possibility of reducing ambient light entering the drive circuit 12.

[0128] Similarly, the sidewall 212 can be arranged to cover only a portion of the side surface s2 of the opening H50, rather than the entire side surface s2. In this case, the sidewall 212 can be formed to cover the side surface s2 of the opening H50 closest to the drive circuit 12, but not the side surface furthest from the drive circuit 12. In this case, compared to not covering the side surface closest to the drive circuit 12 with the sidewall 212, there is a possibility of reducing ambient light entering the drive circuit 12.

[0129] <Fourth Implementation Plan>

[0130] In the embodiments of this disclosure, peripheral shading units can be arranged to block the propagation path of ambient light that has entered from the opening H120, etc. As part of this aspect, configuration examples 1 to 4 of the fourth embodiment will be described.

[0131] (Example 1)

[0132] Figure 16 This is a cross-sectional view showing a configuration example (configuration example 1) of a VCSEL mount 140D according to the fourth embodiment of this disclosure. Figure 17 It shows Figure 16 An enlarged plan view of the WB pad electrode 110 and its surrounding area. Figure 16 The cross-sectional view shown is obtained by cutting along line A-A'. Figure 17 The cross-sectional view obtained from the plan view shown. Note that it is taken along line B-B'. Figure 17 The cross-section of the plan view shown has a section cut along line A-A'. Figure 17 The cross-sections shown in the plan view have the same structure.

[0133] like Figure 16As shown, at least a portion of the ambient light that has entered through opening H120 propagates through the interface between the WB pad electrode 110 and the protective film 120, and through the SiO2 film 121 constituting the protective film 120. In the VCSEL mount 140D, an opaque component 221 (an example of the “peripheral shading unit” of this disclosure) is arranged between the WB pad electrode 110 and the protective film 120 and blocks the propagation path of the ambient light. The opaque component 221 absorbs and attenuates the ambient light propagating along the propagation path.

[0134] The opaque component 221 is made of, for example, titanium nitride (TiN). TiN is formed by forming a film using semiconductor manufacturing processes such as chemical vapor deposition (CVD) or sputtering and patterning it using photolithography.

[0135] The opaque component 221 is preferably in contact with the SiN film 122. Therefore, the opaque component 221 can delineate the SiO2 film 121 on the WB pad electrode 110 and can absorb and attenuate ambient light propagating within the SiO2 film 121. For example, after forming the opaque component 221 on the WB pad electrode 110, the SiO2 film 121 is formed on the LDD substrate 42, and the surface of the SiO2 film 121 is subjected to chemical mechanical polishing (CMP) to expose the surface of the opaque component 221, and then the SiN film 122 is formed, thereby enabling the opaque component 221 to contact the SiN film 122.

[0136] In the VCSEL mount 140D according to the fourth embodiment, the opaque component 221 blocks the propagation path of ambient light, thereby shielding at least a portion of the drive circuit 12 (e.g., the bias circuit 61) from ambient light. Therefore, the opaque component 221 further reduces the likelihood of the drive circuit 12 malfunctioning.

[0137] In addition, such as Figure 17 As shown, the opaque component 221 is preferably continuously arranged to surround the opening H120 from the outside in a plan view from the Z-axis direction. Therefore, the opaque component 221 can easily block the propagation path of ambient light.

[0138] Note that the configuration example 1 of the fourth embodiment is not limited to the above. The opaque component 221 can be provided intermittently to surround the opening H120 from the outside in a cross-sectional view in the axial direction. Furthermore, the opaque component 221 does not necessarily have to surround the opening H120.

[0139] Figure 18 This is a plan view showing a modified example of the placement of the opaque component 221. (See attached image.) Figure 18As shown, the opaque component 221 can be arranged inside and outside a rectangular frame formed by multiple WB pad electrodes 110 in a planar view along the Z-axis. Even with this arrangement, the opaque component 221 can block the propagation path of ambient light.

[0140] Note that the configuration example 1 of the fourth embodiment is not limited to the above. The opaque component 221 may be arranged only inside or outside the rectangular frame formed by the arrangement of multiple WB pad electrodes 110 in a planar view from the Z-axis direction. For example, the opaque component 221 may be arranged only inside the rectangular frame on the side closer to the drive circuit 12. In this case, compared to the case where the opaque component 221 is arranged only outside the rectangular frame, there is a possibility of reducing the propagation of ambient light into the drive circuit 12.

[0141] (Example 2)

[0142] Figure 19 This is a cross-sectional view showing a configuration example (configuration example 2) of the VCSEL mount 140E according to the fourth embodiment of this disclosure. Figure 19 In the VCSEL mount 140E shown, an anti-reflective film 222 (an example of the "peripheral light-shielding unit" of this disclosure) is disposed between the WB pad electrode 110 and the protective film 120, and blocks the propagation path of ambient light. The anti-reflective film 222 absorbs and attenuates ambient light that is reflected and propagates between the WB pad electrode 110 and the SiN film 122, and reduces the propagation of ambient light.

[0143] The anti-reflective film 222 is made of, for example, a photoresist. The anti-reflective film 222 is formed by forming the film using a semiconductor manufacturing process such as CVD or sputtering and patterning it using photolithography.

[0144] In the VCSEL mount 140E according to Configuration Example 2 of the fourth embodiment, the anti-reflective film 222 blocks the propagation path of ambient light, thereby enabling the blocking of ambient light for at least a portion of the drive circuit 12 (e.g., the bias circuit 61). Therefore, the anti-reflective film 222 can further reduce the possibility of the drive circuit 12 malfunctioning.

[0145] In addition, such as Figure 17 The opaque component 221 shown is preferably provided with a continuous anti-reflective film 222, which surrounds the opening H120 from the outside in a planar view along the Z-axis. Therefore, the anti-reflective film 222 can easily block the propagation path of ambient light.

[0146] Note that the configuration example 2 of the fourth embodiment is not limited to the above. The antireflective film 222 can be intermittently provided to surround the opening H120 from the outside in a cross-sectional view from the axial direction. Furthermore, the antireflective film 222 does not necessarily have to surround the opening H120.

[0147] also, Figure 18 The variation shown can also be applied to configuration example 2 of the fourth embodiment. Figure 18 In this case, an anti-reflective film 222 can be used instead of the opaque component 221. The anti-reflective film 222 can be arranged inside or outside at least one of a rectangular frame formed by a plurality of WB pad electrodes 110 arranged in a planar view from the Z-axis direction. Even in this case, the anti-reflective film 222 is able to block the propagation path of ambient light.

[0148] (Example 3)

[0149] Figure 20 This is a cross-sectional view showing a configuration example (configuration example 3) of the VCSEL mount 140F according to the fourth embodiment of this disclosure. Figure 20 The right end of the right figure is the outer periphery of the LDD substrate 42. Figure 20 The figure on the left is an enlarged cross-sectional view showing a light-shielding virtual wiring layer DML (an example of the “peripheral light-shielding unit” of this disclosure) disposed on the LDD substrate 42.

[0150] like Figure 20 As shown, a protective ring GR exists between the WB pad electrode 110 and the peripheral end 42E of the LDD substrate 42 to prevent the ingress of moisture, impurities, etc. The protective ring GR is formed of a metal layer in the same layer as wirings M1 to M7 and the WB pad electrode 110. The metal layer constituting the protective ring GR is a virtual wiring or virtual electrode that is not electrically connected to components such as transistors.

[0151] When ambient light propagates through the interface between the WB pad electrode 110 and the protective film 120, or through the SiO2 film 121 constituting the protective film 120, there is a possibility that at least a portion of the ambient light may further propagate through the periphery of the WB pad electrode 110 to the LDD substrate 42. Considering this possibility, in the VCSEL mount 140F, a light-shielding virtual wiring layer DML is arranged on the periphery of the WB pad electrode 110 and in the area directly below the WB pad electrode 110. For example, the virtual wiring layer DML is disposed between the area of ​​the WB pad electrode 110 / directly below the WB pad electrode 110 and the guard ring GR. The virtual wiring layer DML may be arranged on the entire periphery of the WB pad electrode 110 and the area directly below the WB pad electrode 110, or it may be arranged on a portion of the periphery of the WB pad electrode 110.

[0152] Furthermore, in the light-shielding virtual wiring layer (DML), multiple virtual wirings are arranged to overlap each other to block ambient light. For example, in Figure 20In the left diagram, virtual wiring DM7 and virtual wiring DM6 are formed in relation to power wiring M7 and power wiring M6 (see reference). Figure 12 The metal wiring layer is in the same layer as the signal wiring M5 and signal wiring M4 (see reference). Virtual wiring DM5 and virtual wiring DM4 are formed on the same layer as the signal wiring M5 and signal wiring M4 (see reference). Figure 12 The same metal wiring layer. Virtual wiring DM7, virtual wiring DM6, virtual wiring DM5, and virtual wiring DM4 are not electrically connected to components such as transistors.

[0153] In the Z-axis direction, virtual wiring DM7 (an example of "layer (n+m) virtual wiring" in this disclosure) and virtual wiring DM6 (an example of "layer n virtual wiring" in this disclosure) overlap each other, such that virtual wiring DM6 overlaps with the wiring space sp7 of virtual wiring DM7. Therefore, even when ambient light passes through the wiring space sp7 of virtual wiring DM7, the light passing through the wiring space sp7 is reflected and attenuated by virtual wiring DM6, which is located in front of the wiring space sp7.

[0154] Similarly, virtual wiring DM5 (an example of "layer (n+m) virtual wiring" in this disclosure) and virtual wiring DM4 (an example of "layer n virtual wiring" in this disclosure) overlap each other, such that the wiring space sp5 of virtual wiring DM4 overlaps with that of virtual wiring DM5. Therefore, even when ambient light passes through the wiring space sp5 of virtual wiring DM5, the light passing through the wiring space sp5 is reflected and attenuated by virtual wiring DM4, which is located in front of the wiring space sp5.

[0155] Therefore, the virtual wiring layer (DML) can block the propagation path of ambient light. The DML can reduce the propagation of ambient light and can shield at least a portion of the drive circuit 12 (e.g., bias circuit 61) from ambient light. Therefore, the DML can further reduce the likelihood of the drive circuit 12 malfunctioning.

[0156] Note that, as described above, the virtual wiring to be overlapped is preferably adjacent wiring in the thickness direction of the LDD substrate 42, such as virtual wiring DM7 and virtual wiring DM6 or virtual wiring DM5 and virtual wiring DM4. That is, m in the above n+m layers is preferably 1. Therefore, the diffraction of ambient light passing through the wiring space can be reduced to a small extent, and the propagation of ambient light can be reduced more effectively.

[0157] also, Figure 18 The variation shown can also be applied to configuration example 3 of the fourth embodiment. Figure 18In this configuration, a virtual wiring layer (DML) can be used to replace the opaque component 221. The virtual wiring layer (DML) can be arranged inside or outside at least one of the rectangular frame formed by the arrangement of multiple WB pad electrodes 110 in a planar view from the Z-axis direction. Even in this case, the virtual wiring layer (DML) can still block the propagation path of ambient light.

[0158] (Example 4)

[0159] Figure 21 This is a cross-sectional view showing a configuration example (configuration example 4) of the VCSEL mount 140G according to the fourth embodiment of this disclosure. Figure 21 As shown, in the VCSEL mount 140G, a light-shielding trench isolation portion 230 (an example of the "peripheral light-shielding unit" of this disclosure) is arranged in the area around the WB pad electrode 110 and directly below the WB pad electrode 110.

[0160] The trench isolation section 230 includes a trench 231 disposed in the interlayer insulating film 130 and an embedded material 232 disposed in the trench 231. The embedded material 232 is made of a material capable of absorbing or reflecting ambient light, such as polycrystalline silicon, metal, or a low dielectric constant material (low-K material).

[0161] Therefore, the trench isolation section 230 can block the propagation path of ambient light and reduce the propagation of ambient light. The trench isolation section 230 can shield at least a portion of the drive circuit 12 (e.g., the bias circuit 61) from ambient light, thereby further reducing the possibility of the drive circuit 12 malfunctioning.

[0162] (Other implementation plans)

[0163] As described above, this disclosure has been illustrated with reference to embodiments and variations, but it should not be construed as limiting the scope of this disclosure by the description and drawings, which constitute a part of this disclosure. Based on this disclosure, those skilled in the art will understand various alternative embodiments, examples, and operational techniques. For example, the light emitted by the light-emitting unit 11 is not limited to infrared light. The light emitted from the light-emitting unit 11 can be visible light or ultraviolet light. Furthermore, the light-shielding unit of this disclosure may include both a light-shielding film 50 and a through-layer 51. As mentioned above, this technology naturally includes various embodiments not described herein. At least one of various omissions, substitutions, or modifications can be made to components without departing from the spirit of the above embodiments and variations. Furthermore, the effects described in this specification are merely illustrative and not limiting, and may have other effects.

[0164] Note that this disclosure can also be arranged as follows: (1)

[0166] An electronic device comprising:

[0167] A first substrate, the first substrate including a driving circuit;

[0168] A second substrate, comprising a light-emitting unit driven by the driving circuit, and the second substrate being mounted on one surface side of the first substrate; and

[0169] A light-shielding unit is disposed on the first substrate and configured to shield at least a portion of the driving circuit from light emitted by the light-emitting unit. (2)

[0171] According to the electronic device described in (1) above, wherein,

[0172] The driving circuit includes a bias circuit that applies current to the light-emitting unit, and

[0173] The light-shielding unit provides light shielding for the bias circuit. (3)

[0175] According to the electronic device described in (1) or (2) above, wherein,

[0176] The light-shielding unit includes a light-shielding film made of a material that has light-shielding properties and disposed on one surface of the first substrate, and

[0177] The light-shielding film covers at least a portion of the driving circuit. (4)

[0179] According to the electronic device described in (3) above, the light-shielding film is configured to cover the entire surface of the first substrate except for the area where the second substrate is mounted. (5)

[0181] According to the electronic device described in (3) above, wherein,

[0182] The first substrate includes a wiring layer disposed in a layer that is different from the light-shielding film in the thickness direction of the first substrate, and is made of a material that has light-shielding properties.

[0183] The driving circuit includes:

[0184] A first region, which overlaps with the light-shielding film in the thickness direction of the first substrate; and

[0185] The second region, which does not overlap with the light-shielding film in the thickness direction of the first substrate, and

[0186] The wiring layer covers at least a portion of the second region. (6)

[0188] The electronic device according to any one of (1) to (5) above, wherein the distance from the side surface of the periphery of the first substrate to the driving circuit is 500 μm or more. (7)

[0190] The electronic device according to any one of (1) to (6) above, wherein the light-shielding unit further includes a through layer made of a light-shielding material and penetrating the first substrate in the thickness direction of the first substrate. (8)

[0192] According to the electronic device described in (7) above, the through layer is arranged in a ring shape along the periphery of the first substrate. (9)

[0194] The electronic device according to any one of (1) to (8) above, wherein the light-emitting unit comprises a vertical cavity surface-emitting laser (VCSEL). (10)

[0196] The electronic device according to any one of (1) to (9) above, wherein the light includes infrared light. (11)

[0198] The electronic device according to any one of (1) to (10) above further includes a lens disposed across the second substrate at a position toward the first substrate, and the light is incident on the lens. (12)

[0200] The electronic device according to any one of (1) to (11) above, wherein,

[0201] The first substrate includes:

[0202] Wiring bonding pad electrodes, wherein the wiring bonding pad electrodes are disposed on one surface side of the first substrate; and

[0203] A protective film is disposed on one surface side of the first substrate and has an opening that exposes the surface of the wiring bonding pad electrode.

[0204] The light-shielding unit includes an outer light-shielding unit that has light-shielding properties and is arranged around the wiring bonding pad electrode. (13)

[0206] According to the electronic device described in (12) above, the peripheral light-shielding unit covers the side surface of the opening. (14)

[0208] According to the electronic device described in (12) above, the peripheral light-shielding unit is arranged between the wiring bonding pad electrode and the protective film. (15)

[0210] According to the electronic device described in (12) above, the peripheral light-shielding unit is arranged around the wiring bonding pad electrode. (16)

[0212] According to the electronic device described in (15) above, wherein,

[0213] The peripheral light-shielding unit includes a virtual wiring layer in which multiple wires are stacked along the thickness direction of the first substrate via an insulating film.

[0214] The virtual wiring of the nth layer (n is an integer greater than or equal to 1) and the virtual wiring of the (n+m)th layer (m is an integer greater than or equal to 1) of the virtual wiring layer overlap each other, such that the wiring space of the virtual wiring of the nth layer and the virtual wiring of the (n+m)th layer overlap each other in the thickness direction of the first substrate. (17)

[0216] According to the electronic device described in (15) above, wherein,

[0217] The peripheral light-shielding unit includes:

[0218] The trenches provided in the first substrate; and

[0219] Embedded material embedded in the groove. (18)

[0221] An electronic device comprising:

[0222] A first substrate, the first substrate including a driving circuit;

[0223] A second substrate, comprising a light-emitting unit driven by the driving circuit, and the second substrate being mounted on one surface side of the first substrate; and

[0224] The peripheral light-shielding unit has a light-shielding property for blocking the light emitted by the light-emitting unit, wherein...

[0225] The first substrate includes:

[0226] Wiring bonding pad electrodes, wherein the wiring bonding pad electrodes are disposed on one surface side of the first substrate; and

[0227] A protective film is disposed on one surface side of the first substrate and has an opening that exposes the surface of the wiring bonding pad electrode.

[0228] The peripheral light-shielding unit is arranged around the wiring bonding pad electrode.

[0229] List of reference numerals

[0230] 1. Light-emitting device

[0231] 2. Camera device

[0232] 3. Control device

[0233] 11 Light-emitting units

[0234] 12. Drive circuit

[0235] 13 Power Supply Circuit

[0236] 14. Light-emitting side optical system

[0237] 21 Image Sensors

[0238] 22 Image Processing Units

[0239] 23 Camera-side optical system

[0240] 31 Distance measuring unit

[0241] 40, 40A, 40B, 40C, 40D, 40E, 40F, 40G, 140A, 140B, 140C, 140D, 140E, 140F, 140G VCSEL mounting structures.

[0242] 41 LD chip

[0243] 42 LDD substrate

[0244] 42a Upper surface

[0245] 42b lower surface

[0246] 43 Mounting substrate

[0247] 44 Heat dissipation substrate

[0248] 45 Correction Lens Holder

[0249] 46 Correction Lens

[0250] 48 Bump Electrode

[0251] 50, 52 shading film

[0252] 51 Through-layer

[0253] 53 Resin

[0254] 60 Driver Circuit

[0255] 61 Bias Circuit

[0256] 62 CLK circuit

[0257] 63 Temperature Information Generation Unit

[0258] 70 Pad Electrode

[0259] 71, 72, 73 wiring layers

[0260] 100 Distance Measuring Device

[0261] 110 WB pad electrode

[0262] 111 Thick film department

[0263] 112 Other parts

[0264] 120 protective film

[0265] 121 Silicon oxide film (SiO2 film)

[0266] 122 Silicon nitride film (SiN)

[0267] 130-layer interlayer insulation film

[0268] 210 Light-blocking resin

[0269] 211, 212 sidewalls

[0270] 221 Opaque Components

[0271] 222 Anti-reflective film

[0272] 230 Trench Isolation Section

[0273] 231 Trench

[0274] 232 Embedded Materials

[0275] 421 substrate body

[0276] 611 well layer

[0277] 612 and 613 bipolar transistors

[0278] DM4, DM5, DM6, DM7 Virtual Wiring

[0279] DML Virtual Wiring Layer

[0280] GR protection ring

[0281] H50, H120 opening

[0282] Wiring for M1, M2, M3, M4, M5, M6, and M7

[0283] s1 and s2 side surfaces

[0284] SP5 and SP7 wiring closet space

Claims

1. An electronic device comprising: a first substrate including a drive circuit; a second substrate including a light emitting unit driven by the drive circuit, and the second substrate being mounted on one surface side of the first substrate; and a light shielding unit provided on the first substrate and configured to shield light emitted by the light emitting unit for at least a part of the drive circuit, wherein the light shielding unit further includes a through layer made of a material having light shielding properties with respect to the light and penetrating the first substrate in a thickness direction of the first substrate. 2.The electronic device according to claim 1, wherein the drive circuit includes a bias circuit that applies a current to the light emitting unit, and the light shielding unit shields the light for the bias circuit. 3.The electronic device according to claim 1 or 2, wherein the light shielding unit includes a light shielding film made of a material having light shielding properties with respect to the light and provided on one surface of the first substrate, and the light shielding film covers at least a part of the drive circuit. the light shielding film is provided to cover the entire surface of the one surface of the first substrate except for a region where the second substrate is mounted. 4.The electronic device of claim 3, wherein, 5.The electronic device according to claim 3, wherein the first substrate includes a wiring layer provided in a layer different from the light shielding film in the thickness direction of the first substrate and made of a material having light shielding properties with respect to the light, the drive circuit includes: a first region overlapping the light shielding film in the thickness direction of the first substrate; and a second region not overlapping the light shielding film in the thickness direction of the first substrate, and the wiring layer covers at least a part of the second region. a distance from a side surface of a periphery of the first substrate to the drive circuit is 500 µm or more. 6.The electronic device of claim 1 or 2, wherein, the through layer is provided in a ring shape along the periphery of the first substrate. 7.The electronic device of claim 1, wherein the light emitting unit includes a vertical cavity surface emitting laser. 8.The electronic device of claim 1 or 2, wherein, the light includes infrared light. 9.The electronic device of claim 1 or 2, wherein, 10.The electronic device according to claim 1 or 2, further comprising a lens arranged at a position facing the first substrate with the second substrate interposed, and the light is incident on the lens. 11.The electronic device according to claim 1 or 2, wherein the first substrate includes: a wiring bonding pad electrode provided on one surface side of the first substrate; and a protective film provided on one surface side of the first substrate and provided with an opening exposing a surface of the wiring bonding pad electrode, and the light shielding unit includes a peripheral light shielding unit having light shielding properties with respect to the light and arranged around the wiring bonding pad electrode. the peripheral light shielding unit covers a side surface of the opening. 12.The electronic device of claim 11, wherein, the peripheral light shielding unit is arranged between the wiring bonding pad electrode and the protective film. 13.The electronic device of claim 11, wherein, the peripheral light shielding unit is arranged at a periphery of the wiring bonding pad electrode. 14.The electronic device of claim 11, wherein 15.The electronic device according to claim 14, wherein ​ The peripheral light-blocking unit includes a dummy wiring layer in which a plurality of wirings are stacked in a thickness direction of the first substrate via an insulating film, and The dummy wiring layer includes an n-th layer of dummy wirings and an (n+m)-th layer of dummy wirings that overlap each other in the thickness direction of the first substrate, such that an inter-wiring space of the n-th layer of dummy wirings and the (n+m)-th layer of dummy wirings overlap each other in the thickness direction of the first substrate, where n is an integer of 1 or more and m is an integer of 1 or more.

16. The electronic device according to claim 14, wherein The peripheral light-blocking unit includes: a trench provided in the first substrate; and an embedded material embedded in the trench.

17. An electronic device comprising: a first substrate including a drive circuit; a second substrate including a light-emitting unit driven by the drive circuit, and the second substrate is mounted on one surface side of the first substrate; and a peripheral light-blocking unit having light-blocking properties with respect to light emitted by the light-emitting unit, wherein the first substrate includes: a wiring bonding pad electrode provided on one surface side of the first substrate; and a protective film provided on one surface side of the first substrate, and provided with an opening exposing a surface of the wiring bonding pad electrode, and the peripheral light-blocking unit is arranged around the wiring bonding pad electrode. ​

Images