A method for manufacturing an LED chip

Abstract

This invention discloses a method for manufacturing an LED chip, comprising the following steps: sputtering an initial transparent conductive layer on a semi-finished LED chip using argon gas at a preset DC power and a preset RF power, wherein the preset DC power is less than or equal to 90W and the preset RF power is less than or equal to 300W; sputtering a top layer on the initial transparent conductive layer using argon and oxygen gas to obtain a semi-finished LED chip with a transparent conductive layer deposited on it. Specifically, during the initial sputtering, oxygen-free sputtering is used to reduce the bombardment effect of oxygen negative ions on the P-type gallium nitride substrate, while low-power sputtering is used to match the low sputtering rate, thereby changing the crystallinity of indium tin oxide, improving the formation of a compound intermediate layer at the interface between the deposited film and the substrate, increasing the dense contact with the P-type gallium nitride substrate, reducing contact resistance, and thus effectively avoiding the voltage fluctuation caused by sputtering etching.

Description

Technical Field

[0001] This invention relates to the field of semiconductor electronics technology, and more particularly to a method for manufacturing LED chips. Background Technology

[0002] Indium tin oxide (ITO) thin films are widely used transparent conductive materials. Due to their excellent light transmittance and low resistance, they are often used as electrode extension layers in LED chip manufacturing to increase the luminous efficiency of LEDs. The most common method for preparing ITO thin films is DC magnetron sputtering with corresponding ITO sputtering equipment. During ITO sputtering, in addition to sputtering the target material, there is also sputtering etching of the substrate. However, the substrate material used in LED chip manufacturing is gallium nitride (GaN). Under high-energy sputtering etching, the particle energy bombards the deposited substrate material, damaging the P-type GaN surface layer and causing abnormal parameters such as voltage increases.

[0003] To reduce damage to P-type gallium nitride, existing film structures and sputtering methods generally address this by lowering the sputtering power. While this can reduce electrical anomalies to some extent, the inevitable sputtering etching process cannot eliminate the bombardment of the substrate, resulting in the continued presence of fluctuating voltage rise anomalies. Summary of the Invention

[0004] The technical problem to be solved by the present invention is to provide an LED chip manufacturing method that can effectively avoid the voltage fluctuation caused by sputtering etching.

[0005] To solve the above-mentioned technical problems, the present invention adopts the following technical solution:

[0006] A method for manufacturing an LED chip includes the following steps:

[0007] Argon gas is used to sputter the bottom layer of the LED chip semi-finished product at a preset DC power and a preset RF power to form an initial transparent conductive layer. The preset DC power is less than or equal to 90W and the preset RF power is less than or equal to 300W.

[0008] Argon and oxygen were used to sputter the top layer of the initial transparent conductive layer to obtain a semi-finished LED chip with a transparent conductive layer deposited on it.

[0009] The beneficial effects of this invention are as follows: Argon gas is used to perform bottom sputtering on the LED chip semi-finished product at a preset DC power and a preset RF power to form an initial transparent conductive layer. The preset DC power is less than or equal to 90W and the preset RF power is less than or equal to 300W. Argon gas and oxygen are used to perform top sputtering on the initial transparent conductive layer to obtain an LED chip semi-finished product with a transparent conductive layer deposited. That is, oxygen-free sputtering is used during bottom sputtering to reduce the bombardment effect of oxygen negative ions on the substrate P-type gallium nitride. At the same time, low-power sputtering is used to match the low sputtering rate, change the crystallinity of indium tin oxide, improve the effect of forming a compound intermediate layer at the interface between the deposited film and the substrate, increase the dense contact with the substrate P-type gallium nitride, reduce contact resistance, and thus effectively avoid the voltage fluctuation caused by sputtering etching. Attached Figure Description

[0010] Figure 1 This is a flowchart illustrating the steps of an LED chip manufacturing method according to an embodiment of the present invention. Detailed Implementation

[0011] To explain in detail the technical content, objectives, and effects of the present invention, the following description is provided in conjunction with the embodiments and accompanying drawings.

[0012] Please refer to Figure 1 This invention provides a method for manufacturing an LED chip, including the following steps:

[0013] Argon gas is used to sputter the bottom layer of the LED chip semi-finished product at a preset DC power and a preset RF power to form an initial transparent conductive layer. The preset DC power is less than or equal to 90W and the preset RF power is less than or equal to 300W.

[0014] Argon and oxygen were used to sputter the top layer of the initial transparent conductive layer to obtain a semi-finished LED chip with a transparent conductive layer deposited on it.

[0015] As can be seen from the above description, the beneficial effects of the present invention are as follows: Argon gas is used to perform bottom sputtering on the LED chip semi-finished product at a preset DC power and a preset RF power to form an initial transparent conductive layer. The preset DC power is less than or equal to 90W and the preset RF power is less than or equal to 300W. Argon gas and oxygen are used to perform top sputtering on the initial transparent conductive layer to obtain an LED chip semi-finished product with a transparent conductive layer deposited. That is, oxygen-free sputtering is used during bottom sputtering to reduce the bombardment effect of oxygen negative ions on the substrate P-type gallium nitride. At the same time, low-power sputtering is used to match the low sputtering rate, change the crystallinity of indium tin oxide, improve the effect of forming a compound intermediate layer at the interface between the deposited film and the substrate, increase the dense contact with the substrate P-type gallium nitride, reduce the contact resistance, and thus effectively avoid the voltage fluctuation caused by sputtering etching.

[0016] Furthermore, the preset DC power includes a third preset DC power;

[0017] The preset radio frequency power includes a third preset radio frequency power;

[0018] The step of using argon gas to perform bottom sputtering on the LED chip semi-finished product at a preset DC power and a preset RF power to form an initial transparent conductive layer includes:

[0019] Argon gas of 60-80 sccm is introduced into the cavity of the ITO machine, and the LED chip semi-finished product is sputtered for 400-600s according to the third preset DC power, the third preset RF power and the third preset turntable speed to form an initial transparent conductive layer.

[0020] As described above, introducing only argon gas and not oxygen gas for bottom sputtering of LED chip semi-finished products can effectively reduce the bombardment effect of oxygen negative ions on the P-type gallium nitride substrate, thus avoiding abnormal parameters such as voltage rise.

[0021] Furthermore, the third preset DC power is 70-90W, the third preset RF power is 200-300W, and the third preset turntable speed is 0.1-0.15r / min.

[0022] As described above, the third preset DC power is 70–90W, the third preset RF power is 200–300W, and the third preset rotary table speed is 0.1–0.15 r / min. The sputtered atoms will deposit onto the substrate surface at a sputtering rate of [missing information]. This results in a film thickness of [missing information]. It achieves low rotation speed and low sputtering rate, which can change the crystallinity of ITO, improve the formation of compound intermediate layer at the interface between the deposited film and the substrate, increase the dense contact with P-type gallium nitride, reduce contact resistance, and avoid voltage rise.

[0023] Furthermore, the preset DC power also includes a first preset DC power and a second preset DC power;

[0024] The preset radio frequency power also includes a first preset radio frequency power and a second preset radio frequency power;

[0025] Before the process of introducing argon gas at 60-80 sccm into the cavity of the ITO machine and sputtering the LED chip semi-finished product at a third preset DC power, a third preset RF power, and a third preset turntable speed for 400-600 seconds to form the initial transparent conductive layer includes:

[0026] Argon gas of 150-250 sccm is introduced into the cavity of the ITO machine and the target material is preheated for 10-30 seconds according to the first preset DC power, the first preset RF power and the first preset turntable speed to obtain the target material after the first preheating.

[0027] Argon gas of 60-80 sccm is introduced into the cavity of the ITO machine, and the first preheated target material is fully preheated for 50-70 seconds according to the second preset DC power, the second preset RF power and the second preset turntable speed to obtain the first fully preheated target material.

[0028] As described above, before the bottom layer sputtering, the target material is sputtered, preheated and impurities on the target surface are removed. The first layer is not oxygen-filled, and a large flow of argon gas is blown into the cavity to remove residual oxygen and other gases. This helps to reduce the bombardment effect of oxygen negative ions on the P-type gallium nitride substrate during subsequent sputtering. Then, the target material is fully preheated to ensure the sputtering effect.

[0029] Furthermore, the first preset DC power is 25-35W, the first preset RF power is 90-110W, and the first preset turntable speed is 5-6 r / min;

[0030] The second preset DC power is 70-90W, the second preset RF power is 200-300W, and the second preset turntable speed is 5-6r / min.

[0031] As described above, increasing the sputtering power during full preheating to the level during bottom sputtering deposition and maintaining it for 50-70 seconds better achieves full preheating of the target material, maintains target surface cleanliness, and sustains the target material's thermal effect, allowing the target material to reach the power state required for production earlier, resulting in more stable subsequent coating.

[0032] Furthermore, the step of using argon and oxygen to perform top-layer sputtering on the initial transparent conductive layer to obtain an LED chip semi-finished product with a deposited transparent conductive layer includes:

[0033] Argon gas at 60–80 sccm and oxygen gas at 0.3–0.8 sccm are introduced into the cavity of the ITO machine. The initial transparent conductive layer is sputtered for 500–600 s at a DC power of 120–160 W, a radio frequency power of 350–450 W, and a turntable speed of 5–6 r / min to obtain a semi-finished LED chip with a transparent conductive layer deposited on it.

[0034] As described above, when the oxygen-argon ratio is between 200:1 and 100:1, the sputtered atoms will deposit onto the substrate surface, at which point the sputtering rate is... The thickness of the deposited film is This is used as the base thickness of the top layer film, and the total thickness of the deposited film can be changed by adjusting the sputtering time. The total thickness is the sum of the thickness of the bottom layer and the thickness of the top layer.

[0035] Further, before the initial transparent conductive layer is sputtered for 500-600 seconds with argon gas at 60-80 sccm and oxygen gas at 0.3-0.8 sccm in the cavity of the ITO machine at a DC power of 120-160W, an RF power of 350-450W, and a turntable speed of 5-6 r / min to obtain the LED chip semi-finished product with the vapor-deposited transparent conductive layer, the following steps are included:

[0036] Argon gas of 60-80 sccm and oxygen gas of 0.3-0.8 sccm are introduced into the cavity of the ITO machine. The target material is preheated for 10-30 seconds with DC power of 100-120W, RF power of 300-350W and turntable speed of 5-6r / min to obtain the second preheated target material.

[0037] Argon gas of 60-80 sccm and oxygen gas of 0.3-0.8 sccm are introduced into the cavity of the ITO machine. The second preheated target material is fully preheated for 50-70 seconds with a DC power of 120-160W, a radio frequency power of 350-450W and a turntable speed of 5-6 r / min to obtain the second fully preheated target material.

[0038] As described above, with the underlying protection, the substrate P-type gallium nitride is not being bombarded. A higher sputtering power can be set to improve sputtering efficiency, and the target material is preheated with high power. Through verification with different argon-oxygen ratios, the top layer with an argon-oxygen ratio of 140:1 has the best conductivity. Continuously increasing the oxygen ratio can reduce the carrier concentration and increase the resistivity. Then, sufficient preheating is performed to ensure the stability of subsequent sputtering.

[0039] Furthermore, the step of using argon gas to perform bottom-layer sputtering on the LED chip semi-finished product at a preset DC power and a preset RF power to form the initial transparent conductive layer includes:

[0040] A sapphire substrate is provided, and an N-type gallium nitride layer, a quantum well layer, and a P-type gallium nitride layer are sequentially grown on the sapphire substrate using a metal-organic chemical vapor deposition method.

[0041] The P-type gallium nitride layer was etched using a reactive-coupled plasma method with Mesa step surface etching until the N-type gallium nitride layer was exposed, resulting in a semi-finished LED chip.

[0042] As described above, this process forms an N-type gallium nitride layer, a quantum well layer, and a P-type gallium nitride layer, ensuring the basic operating performance of the LED chip.

[0043] Further, the step of using argon and oxygen to perform top-layer sputtering on the initial transparent conductive layer to obtain an LED chip semi-finished product with a deposited transparent conductive layer includes:

[0044] The transparent conductive layer on the LED chip semi-finished product with the evaporated transparent conductive layer is annealed at a temperature of 525-550°C and with 1.5-1.8 sccm of oxygen for 300-400s to obtain the annealed transparent conductive layer.

[0045] As described above, high-temperature annealing and oxygen replenishment were achieved, filling the oxygen vacancies in the bottom film, increasing the work function matching degree between ITO and gallium nitride, and avoiding voltage rise.

[0046] Furthermore, the process of obtaining the annealed transparent conductive layer includes:

[0047] A P-metal electrode is deposited on the annealed transparent conductive layer, and an N-metal electrode is deposited on the N-type gallium nitride layer to obtain a semi-finished LED chip after evaporation.

[0048] An insulating protective layer is deposited on the surface of the vapor-deposited LED chip semi-finished product using chemical vapor deposition to obtain the finished LED chip.

[0049] As described above, this completes the current conduction path, preparing for subsequent product applications. In addition, the deposited insulating protective layer provides insulation protection for the entire chip, preventing dust or impurities from affecting the product.

[0050] The LED chip manufacturing method described above is applicable to LED chip manufacturing scenarios, and is further illustrated below through specific embodiments:

[0051] Example 1

[0052] Please refer to Figure 1 This embodiment of an LED chip manufacturing method includes the following steps:

[0053] S1. A sapphire substrate is provided, and an N-type gallium nitride layer, a quantum well layer, and a P-type gallium nitride layer are sequentially grown on the sapphire substrate using an organometallic chemical vapor deposition method.

[0054] S2. The P-type gallium nitride layer is etched using a reactive-coupled plasma method with Mesa step surface etching until the N-type gallium nitride layer is exposed, thus obtaining a semi-finished LED chip.

[0055] S3. Argon gas at 150-250 sccm (volume flow rate) is introduced into the cavity of the ITO machine and the target is preheated for 10-30 seconds according to the first preset DC power, the first preset RF power and the first preset turntable speed to obtain the target after the first preheating. At this time, the baffle is closed and no deposition effect is performed on the substrate (gallium nitride). Only the target is sputtered to preheat the target and remove impurities on the target surface. No oxygen is introduced into the first layer, and the cavity is purged with a large flow of argon gas to remove residual oxygen and other gases in the cavity, so as to reduce the bombardment effect of oxygen negative ions on the substrate P-type gallium nitride during subsequent sputtering.

[0056] Wherein, the first preset DC power is 25-35W, the first preset RF power is 90-110W, and the first preset turntable speed is 5-6r / min.

[0057] In one optional embodiment, argon gas of 200 sccm is introduced into the cavity of the ITO machine, and the target material is preheated for 20 seconds at a DC power of 30W, a radio frequency power of 100W, and a turntable speed of 6r / min to obtain the first preheated target material.

[0058] In another optional embodiment, argon gas of 150 sccm is introduced into the cavity of the ITO machine and the target material is preheated for 10 seconds at a DC power of 25W, a radio frequency power of 90W, and a turntable speed of 5r / min to obtain the first preheated target material.

[0059] In another optional embodiment, argon gas of 250 sccm is introduced into the cavity of the ITO machine, and the target material is preheated for 30 seconds at a DC power of 35W, a radio frequency power of 110W, and a turntable speed of 5.5r / min to obtain the first preheated target material.

[0060] S4. Argon gas of 60-80 sccm is introduced into the cavity of the ITO machine and the first preheated target material is fully preheated for 50-70 seconds according to the second preset DC power, the second preset RF power and the second preset turntable speed to obtain the first fully preheated target material.

[0061] Wherein, the second preset DC power is 70-90W, the second preset RF power is 200-300W, and the second preset turntable speed is 5-6r / min. At this time, the baffle is closed, and the sputtering power has been increased to the level of the bottom sputtering deposition film to achieve sufficient preheating of the target material.

[0062] In one optional embodiment, argon gas of 70 sccm is introduced into the cavity of the ITO machine, and the first preheated target material is fully preheated for 60 seconds at a DC power of 80W, a radio frequency power of 250W, and a turntable speed of 6r / min to obtain the first fully preheated target material.

[0063] In another optional embodiment, argon gas of 60 sccm is introduced into the cavity of the ITO machine and the first preheated target material is fully preheated for 50 seconds at a DC power of 70W, a radio frequency power of 200W, and a turntable speed of 5r / min to obtain the first fully preheated target material.

[0064] In another optional embodiment, argon gas at 80 sccm is introduced into the cavity of the ITO machine, and the first preheated target material is fully preheated for 70 seconds at a DC power of 90W, a radio frequency power of 300W, and a turntable speed of 5.5r / min to obtain the first fully preheated target material.

[0065] S5. Argon gas is used to sputter the LED chip semi-finished product at a preset DC power and a preset RF power to form an initial transparent conductive layer. The preset DC power is less than or equal to 90W and the preset RF power is less than or equal to 300W. The preset DC power includes a first preset DC power, a second preset DC power and a third preset DC power. The preset RF power includes a first preset RF power, a second preset RF power and a third preset RF power.

[0066] Specifically, argon gas of 60-80 sccm is introduced into the cavity of the ITO machine, and the LED chip semi-finished product is sputtered for 400-600 seconds according to the third preset DC power, the third preset RF power and the third preset turntable speed to form an initial transparent conductive layer.

[0067] Wherein, the third preset DC power is 70-90W, the third preset RF power is 200-300W, and the third preset rotary table rotation speed is 0.1-0.15 r / min. At this time, the baffle is open, and the sputtered atoms will deposit onto the substrate surface at a sputtering rate of... The thickness of the deposited film is

[0068] In one optional embodiment, argon gas at 70 sccm is introduced into the cavity of the ITO machine, and the LED chip semi-finished product is sputtered for 500 seconds at a DC power of 80W, an RF power of 250W, and a turntable speed of 0.12 r / min to form an initial transparent conductive layer. The sputtering rate at this time is... Low rotation speed combined with low sputtering rate can change the crystallinity of ITO, improve the formation of a compound intermediate layer at the interface between the deposited film and the substrate, increase the dense contact with P-type gallium nitride, and reduce contact resistance.

[0069] In another optional embodiment, argon gas at 60 sccm is introduced into the cavity of the ITO machine, and the LED chip semi-finished product is sputtered for 600 seconds at a DC power of 70W, an RF power of 200W, and a turntable speed of 0.1 r / min to form an initial transparent conductive layer. The sputtering rate at this time is...

[0070] In another optional embodiment, argon gas at 80 sccm is introduced into the cavity of the ITO machine, and the LED chip semi-finished product is sputtered for 400 seconds at a DC power of 90W, an RF power of 300W, and a turntable speed of 0.15 r / min to form an initial transparent conductive layer. The sputtering rate at this time is...

[0071] S6. Argon gas at 60-80 sccm and oxygen gas at 0.3-0.8 sccm are introduced into the cavity of the ITO machine. The target material is preheated for 10-30 seconds with a DC power of 100-120W, an RF power of 300-350W, and a turntable speed of 5-6 r / min. The target material is then preheated to a second preheated state, with an argon-oxygen ratio between 200:1 and 100:1. At this point, the baffle is closed, and the target material is preheated at high power. With the underlying layer protection, the target material is not bombarded at this time. A higher sputtering power can be set to improve sputtering efficiency.

[0072] In one optional embodiment, 70 sccm of argon and 0.5 sccm of oxygen are introduced into the cavity of the ITO machine to preheat the target material for 20 seconds at a DC power of 100W, a radio frequency power of 300W, and a turntable speed of 6r / min, to obtain a second preheated target material. At this time, the argon-oxygen ratio is 140:1, which has the best conductivity. Continuously increasing the oxygen ratio will cause the carrier concentration to decrease and the resistivity to increase.

[0073] In another optional embodiment, 60 sccm of argon and 0.3 sccm of oxygen are introduced into the cavity of the ITO machine to preheat the target material for 10 seconds at a DC power of 110W, a radio frequency power of 330W, and a turntable speed of 5r / min, to obtain a second preheated target material, at which time the argon-oxygen ratio is 200:1.

[0074] In another optional implementation, 80 sccm of argon and 0.8 sccm of oxygen are introduced into the cavity of the ITO machine to preheat the target material for 30 seconds at a DC power of 120W, a radio frequency power of 350W, and a turntable speed of 5.5r / min, to obtain a second preheated target material, at which time the argon-oxygen ratio is 100:1.

[0075] S7. Argon gas of 60-80 sccm and oxygen gas of 0.3-0.8 sccm are introduced into the cavity of the ITO machine. The second preheated target material is fully preheated for 50-70 seconds at a DC power of 120-160W, a radio frequency power of 350-450W and a turntable speed of 5-6 r / min to obtain a second fully preheated target material. At this time, the baffle is closed to increase the sputtering power to the level of the bottom layer sputtering film formation, so as to achieve full preheating of the target material.

[0076] In one optional embodiment, 70 sccm of argon and 0.5 sccm of oxygen are introduced into the cavity of the ITO machine to fully preheat the second preheated target material for 60 seconds at a DC power of 140W, a radio frequency power of 410W, and a turntable speed of 6r / min, thereby obtaining a second fully preheated target material.

[0077] In another optional embodiment, 60 sccm of argon and 0.3 sccm of oxygen are introduced into the cavity of the ITO machine to fully preheat the second preheated target material for 50 seconds at a DC power of 120W, a radio frequency power of 350W, and a turntable speed of 5r / min, thereby obtaining a second fully preheated target material.

[0078] In another optional embodiment, 80 sccm of argon and 0.8 sccm of oxygen are introduced into the cavity of the ITO machine to fully preheat the second preheated target material for 70 seconds at a DC power of 160W, a radio frequency power of 450W, and a turntable speed of 5.5r / min, thereby obtaining a second fully preheated target material.

[0079] S8. Argon and oxygen are used to perform top-layer sputtering on the initial transparent conductive layer to obtain a semi-finished LED chip with a transparent conductive layer deposited on it.

[0080] Specifically, argon gas at 60–80 sccm and oxygen gas at 0.3–0.8 sccm are introduced into the cavity of the ITO machine. The initial transparent conductive layer is sputtered for 500–600 seconds using a DC power of 120–160W, an RF power of 350–450W, and a rotary table speed of 5–6 r / min, resulting in a semi-finished LED chip with a deposited transparent conductive layer. At this point, the baffle is opened, and the sputtered atoms are deposited onto the substrate surface, with a film thickness of [missing information]. This is used as the base thickness of the top layer film, and the total thickness of the deposited film can be changed by adjusting the sputtering time. The total thickness is the sum of the thickness of the bottom layer and the thickness of the top layer.

[0081] In one optional embodiment, argon gas at 70 sccm and oxygen gas at 0.5 sccm are introduced into the cavity of the ITO machine. The initial transparent conductive layer is sputtered for 550 seconds at a DC power of 140W, an RF power of 410W, and a rotary table speed of 6 r / min, resulting in a semi-finished LED chip with a deposited transparent conductive layer. The sputtering rate at this point is...

[0082] In another optional embodiment, argon gas at 60 sccm and oxygen gas at 0.3 sccm are introduced into the cavity of the ITO machine, and the initial transparent conductive layer is sputtered for 600 s at a DC power of 120W, an RF power of 350W, and a turntable speed of 5 r / min to obtain a semi-finished LED chip with a transparent conductive layer deposited on it. The sputtering rate at this time is...

[0083] In another optional embodiment, argon gas at 80 sccm and oxygen gas at 0.8 sccm are introduced into the cavity of the ITO machine, and the initial transparent conductive layer is sputtered for 500 s at a DC power of 160W, an RF power of 450W, and a turntable speed of 5.5 r / min to obtain a semi-finished LED chip with a transparent conductive layer deposited on it. The sputtering rate at this time is...

[0084] S9. Anneal the transparent conductive layer on the LED chip semi-finished product with the evaporated transparent conductive layer at a temperature of 525-550°C and with oxygen at 1.5-1.8 sccm for 300-400s to obtain the annealed transparent conductive layer, which fills the oxygen vacancies in the bottom film and increases the matching degree of ITO and gallium nitride work function.

[0085] In one optional embodiment, the transparent conductive layer on the LED chip semi-finished product with the evaporated transparent conductive layer is annealed at a temperature of 525°C and with 1.5 sccm of oxygen for 300 seconds to obtain the annealed transparent conductive layer.

[0086] In another optional embodiment, the transparent conductive layer on the LED chip semi-finished product with the evaporated transparent conductive layer is annealed at a temperature of 540°C and with 1.6 sccm of oxygen for 350 seconds to obtain the annealed transparent conductive layer.

[0087] In another optional embodiment, the transparent conductive layer on the LED chip semi-finished product with the evaporated transparent conductive layer is annealed at a temperature of 550°C and with 1.8 sccm of oxygen for 400s to obtain the annealed transparent conductive layer.

[0088] S10. A P-metal electrode is deposited on the annealed transparent conductive layer, and an N-metal electrode is deposited on the N-type gallium nitride layer to obtain a semi-finished LED chip after evaporation, thus completing the current conduction path and preparing for subsequent product applications.

[0089] S11. An insulating protective layer is deposited on the surface of the vapor-deposited LED chip semi-finished product using chemical vapor deposition to obtain the finished LED chip, thus completing the insulation protection of the entire chip and preventing dust or impurities from affecting the product.

[0090] By conducting electrical tests on finished LED chips, taking a finished LED chip with dimensions of 460*200μm as an example, the higher the voltage value, the lower the luminous efficacy of the LED product and the higher the energy consumption. The yield rate is used as the control value for the product, set at <3.5V. Products with a voltage higher than 3.5V are judged as defective products. Products with higher voltage have more voltage defective products. The voltage value of the finished LED chip produced by this invention is lower than that of the original solution, about 0.068V lower. The voltage yield rate is 1.52% higher than that of the original solution. In particular, the phenomenon of increased voltage fluctuation in some chip sources is significantly reduced, as shown in Table 1.

[0091] Table 1 Comparison results between the new solution of this invention and the old solution of the prior art

[0092]

[0093] In summary, the present invention provides an LED chip manufacturing method in which argon gas is used to sputter a bottom layer on a semi-finished LED chip at a preset DC power and a preset RF power to form an initial transparent conductive layer. The preset DC power is less than or equal to 90W, and the preset RF power is less than or equal to 300W. Argon and oxygen are then used to sputter a top layer on the initial transparent conductive layer to obtain a semi-finished LED chip with a vapor-deposited transparent conductive layer. The transparent conductive layer on the semi-finished LED chip with the vapor-deposited transparent conductive layer is then subjected to a temperature of 525–550°C and a pressure of 1.5–1.8 sccm. Oxygen is used for annealing for 300-400 seconds to obtain an annealed transparent conductive layer. That is, oxygen-free sputtering is used during the bottom layer sputtering to reduce the bombardment effect of oxygen negative ions on the substrate P-type gallium nitride. At the same time, low-power sputtering is used to match the low sputtering rate, which changes the crystallinity of indium tin oxide, improves the formation of a compound intermediate layer at the interface between the deposited film and the substrate, increases the dense contact with the substrate P-type gallium nitride, and reduces the contact resistance. At the same time, high-temperature annealing and oxygen replenishment fill the oxygen vacancies in the bottom layer film, increases the work function matching degree between ITO and gallium nitride, avoids voltage rise, and thus effectively avoids the fluctuating voltage rise caused by sputtering etching.

[0094] The above description is merely an embodiment of the present invention and does not limit the patent scope of the present invention. Any equivalent modifications made based on the content of the present invention specification and drawings, or direct or indirect applications in related technical fields, are similarly included within the patent protection scope of the present invention.

Claims

1. A method for manufacturing an LED chip, characterized in that, Including the following steps: Argon gas is used to sputter the bottom layer of the LED chip semi-finished product at a preset DC power and a preset RF power to form an initial transparent conductive layer. The preset DC power is less than or equal to 90W and the preset RF power is less than or equal to 300W. Argon and oxygen were used to sputter the top layer of the initial transparent conductive layer to obtain a semi-finished LED chip with a transparent conductive layer deposited on it. The preset DC power includes a third preset DC power; The preset radio frequency power includes a third preset radio frequency power; The step of using argon gas to perform bottom sputtering on the LED chip semi-finished product at a preset DC power and a preset RF power to form an initial transparent conductive layer includes: Argon gas at 60-80 sccm is introduced into the cavity of the ITO machine, and the LED chip semi-finished product is sputtered for 400-600 seconds according to the third preset DC power, the third preset RF power and the third preset turntable speed to form an initial transparent conductive layer.

2. The method for manufacturing an LED chip according to claim 1, characterized in that, The third preset DC power is 70~90W, the third preset RF power is 200~300W, and the third preset turntable speed is 0.1~0.15r / min.

3. The method for manufacturing an LED chip according to claim 1, characterized in that, The preset DC power also includes a first preset DC power and a second preset DC power; The preset radio frequency power also includes a first preset radio frequency power and a second preset radio frequency power; Before the process of introducing argon gas at 60-80 sccm into the cavity of the ITO machine and sputtering the LED chip semi-finished product at a third preset DC power, a third preset RF power, and a third preset turntable speed for 400-600 seconds to form the initial transparent conductive layer includes: Argon gas of 150~250 sccm is introduced into the cavity of the ITO machine and the target material is preheated for 10~30s according to the first preset DC power, the first preset RF power and the first preset turntable speed to obtain the target material after the first preheating. Argon gas of 60-80 sccm is introduced into the cavity of the ITO machine, and the first preheated target material is fully preheated for 50-70 seconds according to the second preset DC power, the second preset RF power and the second preset turntable speed to obtain the first fully preheated target material.

4. The method for manufacturing an LED chip according to claim 3, characterized in that, The first preset DC power is 25~35W, the first preset RF power is 90~110W, and the first preset turntable speed is 5~6r / min; The second preset DC power is 70~90W, the second preset RF power is 200~300W, and the second preset turntable speed is 5~6r / min.

5. The method for manufacturing an LED chip according to claim 1, characterized in that, The step of using argon and oxygen to perform top-layer sputtering on the initial transparent conductive layer to obtain a semi-finished LED chip with a vapor-deposited transparent conductive layer includes: Argon gas at 60-80 sccm and oxygen gas at 0.3-0.8 sccm are introduced into the cavity of the ITO machine. The initial transparent conductive layer is sputtered for 500-600 seconds at a DC power of 120-160W, a radio frequency power of 350-450W, and a turntable speed of 5-6 r / min to obtain a semi-finished LED chip with a transparent conductive layer deposited on it.

6. The method for manufacturing an LED chip according to claim 5, characterized in that, Before obtaining the LED chip semi-finished product with the deposited transparent conductive layer, the process involves introducing 60-80 sccm of argon gas and 0.3-0.8 sccm of oxygen gas into the cavity of the ITO machine, sputtering the top layer of the initial transparent conductive layer for 500-600 s at a DC power of 120-160W, an RF power of 350-450W, and a turntable speed of 5-6 r / min. Argon gas of 60-80 sccm and oxygen gas of 0.3-0.8 sccm are introduced into the cavity of the ITO machine. The target material is preheated for 10-30 seconds with DC power of 100-120W, RF power of 300-350W and turntable speed of 5-6r / min to obtain the second preheated target material. Argon gas at 60-80 sccm and oxygen gas at 0.3-0.8 sccm are introduced into the cavity of the ITO machine. The second preheated target material is fully preheated for 50-70 seconds with a DC power of 120-160W, a radio frequency power of 350-450W, and a turntable speed of 5-6 r / min to obtain the second fully preheated target material.

7. The method for manufacturing an LED chip according to claim 1, characterized in that, Before the initial transparent conductive layer is formed by sputtering a bottom layer with argon gas at a preset DC power and a preset RF power on the LED chip semi-finished product, the following steps are included: A sapphire substrate is provided, and an N-type gallium nitride layer, a quantum well layer, and a P-type gallium nitride layer are sequentially grown on the sapphire substrate using a metal-organic chemical vapor deposition method. The P-type gallium nitride layer was etched using a reactive-coupled plasma method with Mesa step surface etching until the N-type gallium nitride layer was exposed, resulting in a semi-finished LED chip.

8. The method for manufacturing an LED chip according to claim 7, characterized in that, The process of using argon and oxygen to perform top-layer sputtering on the initial transparent conductive layer to obtain a semi-finished LED chip with a deposited transparent conductive layer includes: The transparent conductive layer on the LED chip semi-finished product with the evaporated transparent conductive layer is annealed at a temperature of 525~550℃ and with oxygen at 1.5~1.8 sccm for 300~400s to obtain the annealed transparent conductive layer.

9. The method for manufacturing an LED chip according to claim 8, characterized in that, After obtaining the annealed transparent conductive layer, the following is included: A P-metal electrode is deposited on the annealed transparent conductive layer, and an N-metal electrode is deposited on the N-type gallium nitride layer to obtain a semi-finished LED chip after evaporation. An insulating protective layer is deposited on the surface of the vapor-deposited LED chip semi-finished product using chemical vapor deposition to obtain the finished LED chip.

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