A detection circuit array and a detection device

Abstract

The present invention discloses a detection circuit array and a detection device. The detection circuit array includes a plurality of detection lines and a plurality of detection units arranged in an array; the detection unit includes a detection module and a first conversion module; the detection modules of at least some of the detection units in the same row are connected in series in sequence; among the detection modules connected in series, the input end of the first detection module receives a scan signal, and the input ends of the other detection modules except the first detection module are connected to the output end of the previous detection module at a detection node; in the same detection unit, the input end of the first conversion module is electrically connected to the output end of the detection module at the detection node; the output ends of the first conversion modules of at least some of the detection units in the same column are electrically connected to the same detection line. By adopting the above technical solution, the detection difficulty of a large number of sites in large scale and large quantity is reduced, and the accuracy and precision of the detection result are improved.

Description

Technical Field

[0001] The present invention relates to the field of circuit technologies, and particularly to a detection circuit array and a detection device. Background Art

[0002] In the applications of some sensor arrays or battery arrays, it is necessary to monitor the temperature at different positions in real time. Usually, temperature-sensitive resistors are arranged at various positions on the panel, and the temperature at the position where the temperature-sensitive resistor is located is obtained according to the temperature characteristic curve of the temperature-sensitive resistor and the measured resistance value.

[0003] However, the temperature-sensitive resistor is mainly formed by the metal trace resistance, and each temperature-sensitive resistor needs to be tested independently, making it difficult to detect the temperature at a large number of different positions on a large scale. Summary of the Invention

[0004] The present invention provides a detection circuit array and a detection device to solve the detection of a large number of temperature-sensitive resistors on a large scale.

[0005] According to one aspect of the present invention, a detection circuit array is provided, including: a plurality of detection lines and a plurality of detection units arranged in an array; the detection unit includes a detection module and a first conversion module;

[0006] At least some of the detection modules of the detection units in the same row are connected in series in sequence; the output ends of the connected detection modules are respectively electrically connected to different detection nodes; among the connected detection modules, the input end of the first detection module receives a scan signal, and the input ends of the other detection modules except the first detection module are connected to the output end of the previous detection module at the detection node;

[0007] In the same detection unit, the input end of the first conversion module is electrically connected to the output end of the detection module at the detection node; the output ends of the first conversion modules of at least some of the detection units in the same column are electrically connected to the same detection line; the first conversion module is used to output a detection signal to the detection line according to the potential of the detection node.

[0008] According to another aspect of the present invention, a detection device is provided, including: the above detection circuit array.

[0009] In the technical solution of the present invention, by sequentially connecting in series the detection modules of at least some of the detection units in the same row, the first conversion module in the detection unit can obtain the potentials at each detection node between the detection modules and convert them into detection signals; the scanning signal can be used to control whether current flows into the detection modules connected in series, and the potentials at each detection node between the detection modules connected in series can be obtained from the detection signals in the detection lines. The potentials of each detection node in the entire detection circuit array can be obtained through a small number of scanning lines and detection lines, and then the impedances of the detection modules of the detection units at each position in the entire detection circuit array can be determined, so as to determine the detection information at each position in the entire detection circuit array, reducing the detection difficulty for a large number of sites; by converting the electrical signals at the detection nodes into detection signals through the first detection module, it is possible to avoid the change of the electrical signals at the detection nodes due to the influence of the trace resistance during transmission, making the obtained electrical signals at the detection nodes more accurate, and further making the obtained impedances of the detection modules more accurate, improving the accuracy and reliability of the detection results.

[0010] It should be understood that the content described in this part is not intended to identify the key or important features of the embodiments of the present invention, nor is it used to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0012] Figure 1 is a schematic structural diagram of a detection circuit array in the prior art;

[0013] Figure 2 is a schematic structural diagram of a detection circuit array provided by an embodiment of the present invention;

[0014] Figure 3 is a schematic structural diagram of another detection circuit array provided by an embodiment of the present invention;

[0015] Figure 4 is a schematic structural diagram of another detection circuit array provided by an embodiment of the present invention;

[0016] Figure 5 is a schematic structural diagram of another detection circuit array provided by an embodiment of the present invention;

[0017] Figure 6 is a schematic structural diagram of a detection unit provided by an embodiment of the present invention;

[0018] Figure 7 Another structural schematic diagram of the detection circuit array provided by the embodiment of the present invention;

[0019] Figure 8 Another structural schematic diagram of the detection circuit array provided by the embodiment of the present invention;

[0020] Figure 9 Another structural schematic diagram of the detection circuit array provided by the embodiment of the present invention;

[0021] Figure 10 Another structural schematic diagram of the detection circuit array provided by the embodiment of the present invention;

[0022] Figure 11 A structural schematic diagram of a thermistor provided by the embodiment of the present invention;

[0023] Figure 12 A structural schematic diagram of a light sensor provided by the embodiment of the present invention;

[0024] Figure 13 Another structural schematic diagram of the detection circuit array provided by the embodiment of the present invention;

[0025] Figure 14 A structural schematic diagram of a detection device provided by the embodiment of the present invention. Detailed implementation manners

[0026] In order to enable those skilled in the art to better understand the solution of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0027] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above drawings are used to distinguish similar objects, and do not necessarily need to describe a specific order or sequence. It should be understood that such data can be interchanged under appropriate circumstances so that the embodiments of the present invention described herein can be implemented in an order different from those illustrated or described herein. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device comprising a series of steps or units does not necessarily have to be limited to those steps or units clearly listed, but may include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0028] Figure 1 is a schematic structural diagram of a detection circuit array in the prior art. Refer to Figure 1 , the detection circuit array 01 includes temperature measuring resistors 02 arranged in an array. Detection lines 03 are connected to both ends of the temperature measuring resistors 02. By means of the electrical signals on the detection lines 03 and at both ends of the temperature measuring resistors 02, the resistance value of the temperature measuring resistor 02 can be obtained. According to the characteristic curve and the resistance value of the temperature measuring resistor 02, the temperature at the position where the temperature measuring resistor 02 is located can be obtained.

[0029] As described in the background art, the temperature measuring resistor 02 is formed by metal traces. Each temperature measuring resistor 02 is independently tested through the detection line 03. As the number of temperature measuring resistors 02 increases, the number of detection lines 03 also increases in large quantities. For a large-scale and large-batch of temperature measuring resistors 02, the number of detection lines 03 is huge and difficult to implement; moreover, for a relatively long detection line 03, its resistance value will also affect the obtained resistance value of the temperature measuring resistor 02. Therefore, it is difficult to implement the temperature detection of different sites on a large scale and in large quantities.

[0030] To solve the above technical problems, an embodiment of the present invention provides a detection circuit array, including: a plurality of detection lines and a plurality of detection units arranged in an array; the detection unit includes a detection module and a first conversion module; at least some of the detection modules of the detection units in the same row are sequentially connected in series; the output ends of the serially connected detection modules are respectively electrically connected to different detection nodes; among the serially connected detection modules, the input end of the first detection module receives a scan signal, and the input ends of the other detection modules except the first detection module are connected to the output end of the previous detection module at the detection node; in the same detection unit, the input end of the first conversion module is electrically connected to the output end of the detection module at the detection node; the output ends of the first conversion modules of at least some of the detection units in the same column are electrically connected to the same detection line; the first conversion module is configured to output a detection signal to the detection line according to the potential of the detection node.

[0031] Adopting the above technical solution, by sequentially connecting in series the detection modules of at least some of the detection units in the same row, the first conversion module in the detection unit can obtain the potentials at each detection node between the detection modules and convert them into detection signals; the scanning signal can be used to control whether current flows into the detection modules connected in series, and the potentials at each detection node between the detection modules connected in series can be obtained from the detection signals in the detection lines. The potentials of each detection node in the entire detection circuit array can be obtained through a small number of scanning lines and detection lines, and then the impedances of the detection modules of the detection units at each position in the entire detection circuit array can be determined, thereby the detection information at each position in the entire detection circuit array can be determined, reducing the detection difficulty for a large number of sites; by converting the electrical signals at the detection nodes into detection signals through the first detection module, it is possible to avoid the change of the electrical signals at the detection nodes affected by the trace resistance during the transmission process, making the obtained electrical signals at the detection nodes more accurate, and further making the obtained impedances of the detection modules more accurate, improving the accuracy and precision of the detection results.

[0032] The above is the core idea of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of protection of the present invention. The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention.

[0033] Figure 2 This is a schematic structural diagram of a detection circuit array provided by an embodiment of the present invention. Refer to Figure 2 , the detection circuit array 10 includes a plurality of detection lines 11 and a plurality of detection units 20 arranged in an array; the detection unit 20 includes a detection module 21 and a first conversion module 22. The detection modules 21 of at least some of the detection units 20 in the same row are sequentially connected in series; the output ends of the detection modules 21 connected in series are respectively electrically connected to different detection nodes N; among the detection modules 21 connected in series, the input end of the first detection module 21 receives the scanning signal, and the input ends of the other detection modules 21 except the first detection module 21 are connected to the output end of the previous detection module 21 at the detection node N. In the same detection unit 20, the input end of the first conversion module 22 is electrically connected to the output end of the detection module 20 at the detection node N; the output ends of the first conversion modules 22 of at least some of the detection units 20 in the same column are electrically connected to the same detection line 11; the first conversion module 21 is configured to output a detection signal to the detection line 11 according to the potential at the detection node N.

[0034] Among them, the detection module 21 in the detection unit 20 can be used to detect the temperature at its location, but is not limited thereto. For example, the detection module 21 can also be used to detect the light intensity, pressure, etc. at its location. The embodiments of the present invention do not make specific limitations in this regard.

[0035] Specifically, in each of the detection modules 21 connected in series, after the input terminal of the first detection module 21 receives a scanning signal, there is current flowing through each of the detection modules 21 connected in series, and there will be a potential difference across the detection module 21, resulting in different electrical signals at different detection nodes N. From the potential at each detection node N and the current signal flowing through each detection module 21, the impedance in each detection module 21 can be determined. When the impedance of each detection module 21 changes with the temperature, light intensity, pressure, etc. at its location, information such as the temperature, light intensity, or pressure at the location where each detection unit 20 is located can be determined based on the impedance of each detection module 21. The scanning signal can be provided by a Gate Driven on Array (GOA) circuit on the array substrate. This GOA circuit can sequentially provide scanning signals to the detection modules 21 in each row, such that only a certain row of the detection modules 21 connected in series has current flowing through at a time, that is, there are electrical signals only at the detection nodes N located in that row. Each detection line 11 can respectively acquire the electrical signals at the detection nodes N between the detection modules 21 in that row. The first conversion module 22 can convert the electrical signal at the detection node N electrically connected to it into a current signal and transmit it to the detection line 11, avoiding the change of the electrical signal at each detection node N due to the influence of the trace resistance during the transmission in the detection line 11. From the current signal transmitted in the detection line 11, the electrical signal at each detection node N in that row can be determined, and then the impedance in each detection module 21 in that row can be determined. After the electrical signals at each detection node N in that row are detected, then the GOA circuit stops providing the scanning signal to the detection modules 21 in that row and provides the scanning signal to the detection modules 21 in the next row, so as to be able to detect the electrical signals of the detection nodes N in the next row and determine the impedance in each detection module 21 in the next row. By analogy, the impedance of the detection module 21 of each detection unit 20 at each position in the detection circuit array 10 can be determined respectively, and thus information such as the temperature, light intensity, or pressure at each position of the detection circuit array 10 can be determined.

[0036] It should be noted that the first conversion module is not limited to converting a voltage signal into a current signal. In an optional embodiment, when the detection module includes a detection capacitor, the first conversion module can also convert a capacitance signal into a voltage signal or a current signal, or when the detection module includes a detection inductor, the first conversion module can also convert an inductance signal into a voltage signal or a current signal, etc. The embodiments of the present invention do not make specific limitations on this.

[0037] In an embodiment of the present invention, by sequentially connecting in series the detection modules of at least some of the detection units in the same row, the first conversion module in the detection unit can obtain the potentials at each detection node between the detection modules and convert them into detection signals; by means of a scan signal, it can be controlled whether current flows into the detection modules connected in series, and the potentials at each detection node between the detection modules connected in series can be obtained from the detection signals in the detection lines. The potentials of each detection node in the entire detection circuit array can be obtained through a small number of scan lines and detection lines, and then the impedances of the detection modules of the detection units at each position in the entire detection circuit array can be determined, thereby the detection information at each position in the entire detection circuit array can be determined, reducing the detection difficulty for a large number of sites; by converting the electrical signals at the detection nodes into detection signals through the first detection module, it is possible to avoid the change of the electrical signals at the detection nodes affected by the trace resistance during transmission, making the obtained electrical signals at the detection nodes relatively accurate, and further making the obtained impedances of the detection modules relatively accurate, improving the accuracy and precision of the detection results.

[0038] Optionally, Figure 3 is a schematic structural diagram of another detection circuit array provided by an embodiment of the present invention. Refer to Figure 3 , the detection circuit array 10 further includes a plurality of scan lines 12; each detection module 21 located in the same row and connected in series is electrically connected through the scan line 12; the detection module 21 includes a detection resistor R1; the detection resistor R1 is arranged on the same layer as the scan line 12.

[0039] Specifically, a plurality of scan lines 12 can be respectively electrically connected to the scan terminals SCAN of a plurality of GOA sub-units 51 in the GOA circuit. The scan terminals SCAN can sequentially output scan signals with fixed potentials. One scan line 12 can be electrically connected to the detection resistor R1 of the detection modules 21 in the same row, and one detection line 11 can be electrically connected to the first conversion module 22 in the same column. The detection of a large number of sites can be realized through the same number of scan lines 12 as the number of rows of the detection unit 20 and the same number of detection lines 11 as the number of columns of the detection unit 20; the number of traces is reduced, which is beneficial to the thinning of the detection circuit array 10; the detection resistor R1 can be arranged on the same layer as the scan line 12, further reducing the trace space; at this time, the detection resistor R1 can be a winding structure such as a pulse shape or a sawtooth shape, so as to increase the resistance value of the detection resistor R1, reduce the influence of the trace resistance, and improve the detection accuracy and its accuracy.

[0040] Optionally, Figure 4 is a schematic structural diagram of another detection circuit array provided by an embodiment of the present invention. Refer to Figure 4, the detection circuit array 10 further includes a plurality of voltage dividing modules 31. The output end of the last detection module 21 in each series-connected detection module 21 is electrically connected to a voltage dividing module 231 at a detection node N. Among them, the impedance of the voltage dividing module 31 is a fixed value.

[0041] Exemplarily, continue to refer to Figure 4 , the voltage dividing module 31 includes a voltage dividing resistor R0. Taking a row of detection resistors R1 including a first detection resistor R11, a second detection resistor R12, and a third detection resistor R13 as an example. The voltage at the input end of the first detection resistor R11 is the voltage of the scan end SCAN, which is V0; the voltage at the first detection node N1 between the first detection resistor R11 and the second detection resistor R12 is V1. By making the first conversion module 22 electrically connected to the first detection node N1 output a detection signal to the detection line 11, the voltage V1 of the first detection node N1 can be obtained. Correspondingly, the voltage V2 of the second detection node N2 between the second detection resistor R12 and the third detection resistor R13 can be determined in the same way; the voltage V3 of the third detection node N3 between the third detection resistor R13 and the voltage dividing resistor R0; the voltage at the output end of the voltage dividing resistor R0 is grounded, and its voltage can be considered to be 0V. The detection resistors R11, R12, and R13 are all connected in series with the voltage dividing resistor R0, and it can be deduced that Accordingly, the resistance values of the series-connected detection resistors R1 can be determined respectively. And by using this method, when the number of series-connected detection resistors R1 is multiple, the resistance values of the detection resistors R1 at different positions can also be determined respectively. In this way, by setting the voltage dividing module 31, the impedance of the detection module 21 can be obtained from the impedance of the voltage dividing module 31 and the voltage at the detection node N, without the current value of the path where the detection module 21 is located, so as to prevent the wiring resistance of the path where the detection module 21 is located from affecting the accuracy of the current value in its path, thereby improving the accuracy and precision of the detection result.

[0042] In an optional embodiment, the resistance value of the voltage dividing resistor R0 is greater than the resistance value of the detection resistor R1. The relatively large resistance value of the voltage dividing resistor R0 makes the voltages at all detection nodes N relatively large, which is convenient for detecting the voltage at the detection node N and its voltage change, and improves the sensitivity and accuracy of the detection.

[0043] Optionally, Figure 5 is a schematic structural diagram of another detection circuit array provided by an embodiment of the present invention. Refer to Figure 5, the first conversion module 22 includes a first transistor T1 and a second transistor T2; the gates of the first transistor T1 and the second transistor T2 are both electrically connected to the detection node N; the first poles of the first transistor T1 and the second transistor T2 are both coupled to the first level terminal GND; the second pole of the first transistor T1 is electrically connected to the detection node N, and the second pole of the second transistor T2 is electrically connected to the detection line 11.

[0044] Specifically, taking the first transistor T1 and the second transistor T2 as N-type MOS transistors as an example for illustration. The first transistor T1 and the second transistor T2 are made of the same material and prepared by the same process. The mobility μ, dielectric constant Cox, channel width-to-length ratio W / L, threshold voltage Vth, etc. in the first transistor T1 and the second transistor T2 are all the same. The first transistor T1 and the second transistor T2 form a current mirror circuit in proportion. When there is a current flowing through the detection resistor R1, there is a voltage division at the detection node N, which can make both the first transistor T1 and the second transistor T2 in the saturation conduction state; the current flows through the first transistor T1, so that the same current flows through the second transistor T2; the second pole of the second transistor T2 is used as the detection end and is electrically connected to the detection line 11, so that the detection line 11 obtains the current signal flowing through the second transistor T2, and then the current flowing through the first transistor T1 can be determined, so as to determine the potential at the detection node N. Furthermore, according to the potential at the detection node N, the voltage division amount of the detection module 21 can be known, and the impedance of the detection module 21 can be further determined according to this voltage division amount.

[0045] Exemplarily, the gate voltage of the first transistor T1 and the gate voltage of the second transistor T2 are both the voltage Vn at the detection node N, and the current in the first transistor T1 The current in the second transistor T2 I1 = I2. The second transistor T2 can copy the current I1 in the first transistor T1. By respectively obtaining the current I2 in the second transistor T2 in each detection unit 20 in the same row through each detection line 11, the current I1 in the first transistor T1 in each detection unit 20 in the same row can be obtained. Then, according to the formula of the current I1, the voltage Vn at each detection node N and the resistance value of the detection resistor R1 in each detection unit 20 in the same row can be obtained.

[0046] It can be understood that the impedance of the first transistor T1 and the second transistor T2 can reach the megohm level, which is much larger than the impedance of the detection module 21. The current in the first transistor T1 and the current in the second transistor T2 have almost no influence on the voltage Vn at the detection point N; the voltage Vn at the detection point N obtained by the first transistor T1 and the second transistor T2 is basically not affected by factors such as the trace resistance, and it does not affect the impedance of the detection module 21, which is beneficial to improving the accuracy of the detection result.

[0047] In an optional embodiment, the channel width-to-length ratio W2 / L2 of the second transistor T2 is greater than the channel width-to-length ratio W1 / L1 of the first transistor T1. Exemplarily, except for the channel width and length, the second transistor T2 and the first transistor T1 are the same in other aspects. The current I2 in the second transistor T2 is greater than the current I1 in the first transistor T1. The current I1 in the first transistor T1 can be amplified by the second transistor T2, and the amplification factor is (W2 / L2) / (W1 / L1), which can improve the detection sensitivity.

[0048] Optionally, Figure 6 is a schematic structural diagram of a detection unit provided by an embodiment of the present invention. Refer to Figure 6 , the first conversion module 22 further includes a third transistor T3 electrically connected between the first pole of the first transistor T1 and the first level terminal GND, and a fourth transistor T4 electrically connected between the first pole of the second transistor T2 and the first level terminal GND. The first pole of the first transistor T1 is electrically connected to the second pole of the third transistor T3, and the first pole of the third transistor T3 is electrically connected to the first level terminal GND; the first pole of the second transistor T2 is electrically connected to the second pole of the fourth transistor T4, and the first pole of the fourth transistor T4 is electrically connected to the first level terminal GND; the gates of the third transistor T3 and the fourth transistor T4 are both electrically connected to the first pole of the first transistor T1.

[0049] Exemplarily, taking the first transistor T1, the second transistor T2, the third transistor T3, and the fourth transistor T4 as N-type MOS transistors as an example for illustration. The mobility μ, the dielectric constant Cox, and the channel width-to-length ratio W / L of the first transistor T1, the second transistor T2, the third transistor T3, and the fourth transistor T4 may be the same. By connecting the third transistor T3 between the first pole of the first transistor T1 and the first level terminal GND, and connecting the gate of the third transistor T3 to the first pole of the first transistor T1, a cascode structure can be formed to extend the channel length of the first transistor T1; similarly, by connecting the fourth transistor T4 between the first pole of the second transistor T2 and the first level terminal GND, and connecting the gate of the fourth transistor T4 to the first pole of the first transistor T1, a cascode structure can also be formed to extend the channel length of the second transistor T2. Through the cascode structure, the influence of the channel modulation effect can be reduced, and the influence of the channel length modulation effect on the current I1 in the first transistor T1 and the current I2 in the second transistor T2 can be reduced, further improving the accuracy of the detection result.

[0050] It should be noted that, in addition to the above structure, the first conversion module may also be a circuit structure with a similar principle, and the embodiments of the present invention do not make specific limitations thereto.

[0051] Optionally,Figure 7 This is another structural schematic diagram of the detection circuit array provided by the embodiment of the present invention. Refer to Figure 7 , the detection circuit array 10 further includes a plurality of second conversion modules 42; the output ends of the first conversion modules 22 electrically connected to the same detection line 11 are all electrically connected to the same second conversion module 42 through the detection line 11. The first conversion module 22 is specifically configured to output a detection current signal to the detection line 11 according to the potential of the detection node N; the second conversion module 42 is configured to convert the detection current signal on the detection line 11 into a detection voltage signal.

[0052] Exemplarily, when converting the potential of the detection node N into a detection current signal, in addition to being affected by the detection module 21, the magnitude of the detection current signal may also be affected by the self-characteristics or manufacturing process of the devices in the first conversion module 21, resulting in a deviation in the converted detection current signal. By converting the detection current signal into a detection voltage signal through the second conversion module 42, the potential of the detection node N can be directly obtained from the detection voltage signal, without having to calculate the potential of the detection node N through the current value of the detection current signal, avoiding the situation where the detection result is in error due to the deviation of the detection current signal, and improving the accuracy of the detection result.

[0053] Optionally, Figure 8 This is another structural schematic diagram of the detection circuit array provided by the embodiment of the present invention. Refer to Figure 8 , the second conversion module 42 includes a fifth transistor T5, a detection voltage output terminal GS, a second level terminal GND, a third level terminal VDD, a second resistor R2, and a third resistor R3. The gate of the fifth transistor T5 is electrically connected to the detection voltage output terminal GS; the first pole of the fifth transistor T5 is electrically connected to the second level terminal GND; the second pole of the fifth transistor T5 is electrically connected to the third level terminal VDD through the second resistor R2; the third level terminal VDD is electrically connected to the detection line 11 through the third resistor R3.

[0054] Exemplarily, taking the fifth transistor T5 as an N-type MOS transistor as an example for illustration. At this time, the first conversion module 21 may include a first transistor T1 and a second transistor T2. The first transistor T1 and the second transistor T2 are made of the same material and fabricated by the same process. The first transistor T1 and the second transistor T2 can form a current mirror circuit with equal proportions. The mobility μ, dielectric constant Cox, channel width-to-length ratio W / L, threshold voltage Vth, etc. in the second transistor T2 and the fifth transistor T5 are all the same. The resistance value of the second resistor R2 is the same as that of the third resistor R3. The source electrode of the fifth transistor T5 is grounded, the drain electrode of the fifth transistor T5 is electrically connected to the second end of the second resistor R2, and the first end of the second resistor R2 is electrically connected to the third level terminal VDD, forming a bridge circuit. The electrical signal provided by the third level terminal VDD can flow to the ground through the second resistor R2 and the fifth transistor T5. The electrical signal provided by the third level terminal VDD can also flow to the ground through the third resistor R3 and the second transistor T2. By adjusting the voltage VGS at the detection voltage output terminal GS, the drain voltage of the fifth transistor T5 is made equal to the drain voltage of the second transistor T2. At this time, the current I S = I2. Since the mobility μ, dielectric constant Cox, channel width-to-length ratio W / L, threshold voltage Vth, etc. in the second transistor T2 and the fifth transistor T5 are all the same, it can be obtained that VGS = Vn, that is, the voltage Vn of the detection node N can be directly obtained from the voltage VGS at the detection voltage output terminal GS, avoiding the influence of the fluctuation of the transistor's own characteristics on the obtained voltage Vn of the detection node N, and improving the accuracy and precision of the detection result.

[0055] Optionally, Figure 9 is a schematic structural diagram of another detection circuit array provided by an embodiment of the present invention. Refer to Figure 9 . The detection circuit array 10 further includes at least one filter capacitor C; the first electrode plate of the filter capacitor is electrically connected to the input end and / or output end of the detection module 21; the second electrode plate of the filter capacitor C is electrically connected to the fourth level terminal COM; the detection module 21 includes a detection resistor R1; the detection resistor R1 is multiplexed as the first electrode plate of the filter capacitor C. Among them, the capacitance value of the filter capacitor C is greater than the capacitance value of the capacitor formed by the detection resistor R1 and the detection line 11.

[0056] Exemplarily, the detection resistor R1 and the detection line 11 are located in different film layer structures. In the direction perpendicular to the plane where the detection circuit array is located, the detection resistor R1 and the detection line 11 overlap to form some capacitors. When the electrical signal in the detection resistor R1 changes, it may affect the electrical signal in the detection line 11; when the electrical signal in the detection line 11 changes, it may affect the electrical signal in the detection resistor R1. By setting a filter capacitor C in the detection circuit array 10, the capacitance value of the filter capacitor C formed by the detection resistor R1 and the second electrode plate of the filter capacitor C can be much larger than the capacitance value of the capacitor formed by the detection resistor R1 and the detection line 11. The second electrode plate of the filter capacitor C is connected to the fourth level terminal COM with a fixed potential. When the electrical signal in the detection line 11 changes, the electrical signal of the first electrode plate of the filter capacitor C is hardly affected, that is, the electrical signal in the detection capacitor R1 is hardly affected. The filter capacitor C can perform low-pass filtering on the fluctuation of the electrical signal in the detection line 11.

[0057] In an optional embodiment, the detection line 11 can also be reused as the first electrode plate of the filter capacitor C. The capacitance value of the filter capacitor C formed by the detection line 11 and the second electrode plate of the filter capacitor C is greater than the capacitance value of the capacitor formed by the detection resistor R1 and the detection line 11. Thus, when the electrical signal in the detection resistor R1 changes, the electrical signal of the first electrode plate of the filter capacitor C is hardly affected, that is, the electrical signal in the detection line 11 is hardly affected. The filter capacitor C can perform low-pass filtering on the fluctuation of the electrical signal in the detection resistor R1.

[0058] Optionally, Figure 10 This is a schematic structural diagram of another detection circuit array provided by the embodiment of the present invention. Refer to Figure 10 , the second electrode plate C02 of the filter capacitor C is arranged on the same layer as the detection line 11.

[0059] Exemplarily, the detection resistor R1 and the detection line 11 are located in different film layer structures, and there is an overlap between the detection resistor R1 and the detection line 11 in a direction perpendicular to the plane where the detection circuit array is located. At this time, the detection circuit array 10 may include a substrate 101, a first conductive layer 110 and a second conductive layer 120 located on one side of the substrate 101, an insulating layer 102 located between the first conductive layer 110 and the second conductive layer 120, and a planarization layer 103 located on the side of the first conductive layer 110 and the second conductive layer 120 away from the substrate 101. The first conductive layer 110 includes the second electrode plate C02 of the filter capacitor C and the detection line 11, the second conductive layer 120 includes the detection resistor R1 and the first electrode plate C01 of the filter capacitor C, the detection resistor R1 is multiplexed as the first electrode plate C01 of the filter capacitor C, and the second electrode plate C02 of the filter capacitor C is arranged on the same layer as the detection line 11, which can not only perform low-pass filtering on the fluctuation of the electrical signal in the detection line 11, but also save wiring and space, which is beneficial to the thinning of the detection circuit array 10.

[0060] In an optional embodiment, the detection line can be multiplexed as the first electrode plate of the filter capacitor, and the second electrode plate of the filter capacitor can be arranged on the same layer as the detection resistor (not shown in the figure), which can not only perform low-pass filtering on the fluctuation of the electrical signal in the detection resistor, but also save wiring and space, and realize the thinning of the detection circuit array.

[0061] Optionally, when the detection module 21 is used to detect temperature, the detection module 21 may include, for example Figure 11 the thermistor R201 as shown. Among them, the thermistor R201 can be a pulse-shaped structure shown in the figure, or a winding structure such as a sawtooth-shaped structure. In this way, the resistance value of the thermistor 201 can be increased, the influence of the wiring resistance can be reduced, and the accuracy of detecting the resistance value of the thermistor R201 can be improved.

[0062] Optionally, when the detection module 22 is used to detect light intensity, the detection module 21 may include, for example Figure 12 the photosensor 211 as shown. The photosensor 211 includes a detection transistor T202. The first pole T2021 of the detection transistor T202 is the input end of the detection module 21, and the second pole T2022 of the detection transistor T202 is the output end of the detection module 21; the gate T2023 of the detection transistor T202 receives a gate control signal.

[0063] Exemplarily, the active layer 2020 of the detection transistor T202 can be made of a highly doped silicon semiconductor. The mobility within the active layer 2020 can change under the influence of the light intensity, thereby changing the resistance value of the active layer 2020. The resistance value of the active layer 2020 is generally relatively large. A gate control signal can be output to the gate T2023 of the detection transistor T202 to control the resistance value of the detection transistor T202 within a suitable range, which is convenient for detecting the voltage of the detection node N and also for detecting the voltage change of the measurement node N. In addition, the detection transistor T202 can be arranged on the same layer as the transistors in the first conversion module 22 and / or the second conversion module 42, saving space and being beneficial to the thinning of the detection circuit array.

[0064] Optionally, Figure 13 is a schematic structural diagram of another detection circuit array provided by an embodiment of the present invention. Refer to Figure 13 , the detection module 21 includes a piezoresistor R203; the extending directions of two adjacent piezoresistors 203 connected in series intersect.

[0065] Exemplarily, a flexible material can be used to make the substrate of the detection circuit array 10. When a certain site of the detection circuit array 10 deforms, the resistance value of the piezoresistor R203 will change due to the deformation. By detecting the resistance value changes of the piezoresistors R203 at different sites, the pressure changes at different sites can be detected. By setting the extending directions of two connected piezoresistors 203 to intersect, the pressures received by the two piezoresistors R203 in their respective extending directions can be detected, and the pressure deformation in the two-dimensional direction can be detected to facilitate the detection of unevenness and wrinkles at various positions of the detection circuit array 10.

[0066] Based on the same inventive concept, an embodiment of the present invention also provides a detection device, Figure 14 is a schematic structural diagram of a detection device provided by an embodiment of the present invention. Refer to Figure 14 , the detection device 30 includes the detection circuit array 10 provided by any embodiment of the present invention. The detection device 30 provided by the embodiment of the present invention can be used to detect temperature, and can also be used to detect light intensity or pressure, etc. The embodiment of the present invention does not make special limitations in this regard.

[0067] Note that the above is only the preferred embodiment of the present invention and the applied technical principles. Those skilled in the art will understand that the present invention is not limited to the specific embodiments here. Various obvious changes, re-adjustments, and substitutions can be made by those skilled in the art without departing from the protection scope of the present invention. Therefore, although the present invention has been described in detail through the above embodiments, the present invention is not limited to the above embodiments. Without departing from the inventive concept of the present invention, more other equivalent embodiments can be included, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A detection circuit array, characterized in that, Including: Multiple detection lines and multiple detection units arranged in an array; the detection unit includes a detection module and a first conversion module; The detection modules of at least some of the detection units in the same row are connected in series in sequence; the output ends of the serially connected detection modules are respectively electrically connected to different detection nodes; among the serially connected detection modules, the input end of the first detection module receives a scan signal, and the input ends of the other detection modules except the first detection module are connected to the output end of the previous detection module at the detection node; In the same detection unit, the input end of the first conversion module is electrically connected to the output end of the detection module at the detection node; The output ends of the first conversion modules of at least some of the detection units in the same column are electrically connected to the same detection line; the first conversion module is used to output a detection signal to the detection line according to the potential of the detection node.

2. The detection circuit array according to claim 1, wherein Further including: Multiple voltage division modules; The output end of the last detection module among the serially connected detection modules is electrically connected to a voltage division module at the detection node; Wherein, the impedance of the voltage division module is a fixed value.

3. The detection circuit array according to claim 2, wherein, The detection module includes a detection resistor; the voltage division module includes a voltage division resistor; The resistance value of the voltage division resistor is greater than the resistance value of the detection resistor.

4. The detection circuit array according to claim 1, wherein Further including: Multiple scan lines; The serially connected detection modules in the same row are electrically connected through the scan lines; The detection module includes a detection resistor; the detection resistor is arranged on the same layer as the scan line.

5. The detection circuit array according to claim 1, characterized in that, The first conversion module includes a first transistor and a second transistor; The gates of the first transistor and the second transistor are both electrically connected to the detection node; the first poles of the first transistor and the second transistor are both coupled to a first level terminal; the second pole of the first transistor is electrically connected to the detection node, and the second pole of the second transistor is electrically connected to the detection line.

6. The detection circuit array according to claim 5, wherein The channel width-to-length ratio of the second transistor is greater than the channel width-to-length ratio of the first transistor.

7. The detection circuit array according to claim 5, wherein The first conversion module further includes a third transistor electrically connected between the first pole of the first transistor and the first level terminal, and a fourth transistor electrically connected between the first pole of the second transistor and the first level terminal; The first pole of the first transistor is electrically connected to the second pole of the third transistor, and the first pole of the third transistor is electrically connected to the first level terminal; the first pole of the second transistor is electrically connected to the second pole of the fourth transistor, and the first pole of the fourth transistor is electrically connected to the first level terminal; the gates of the third transistor and the fourth transistor are both electrically connected to the first pole of the first transistor.

8. The detection circuit array according to claim 1, wherein Further including: Multiple second conversion modules; The output ends of the first conversion modules electrically connected to the same detection line are all electrically connected to the same second conversion module through the detection line; The first conversion module is specifically used to output a detection current signal to the detection line according to the potential of the detection node. The second conversion module is configured to convert the detection current signal on the detection line into a detection voltage signal.

9. The detection circuit array according to claim 8, characterized in that, The second conversion module includes a fifth transistor, a detection voltage output terminal, a second level terminal, a third level terminal, a second resistor, and a third resistor; The gate of the fifth transistor is electrically connected to the detection voltage output terminal; the first pole of the fifth transistor is electrically connected to the second level terminal; the second pole of the fifth transistor is electrically connected to the third level terminal through the second resistor; The third level terminal is electrically connected to the detection line through the third resistor.

10. The detection circuit array according to claim 1, wherein The detection module includes a thermistor.

11. The detection circuit array according to claim 1, wherein Further included are: At least one filter capacitor; The first electrode plate of the filter capacitor is electrically connected to the input end and / or the output end of the detection module; the second electrode plate of the filter capacitor is electrically connected to a fourth level terminal; the detection module includes a detection resistor; the detection resistor is reused as the first electrode plate of the filter capacitor; Wherein, the capacitance value of the filter capacitor is greater than the capacitance value of the capacitor formed by the detection resistor and the detection line.

12. The detection circuit array according to claim 11, characterized in that, The second electrode plate of the filter capacitor is arranged on the same layer as the detection line.

13. The detection circuit array according to claim 1, characterized in that The detection module includes a light sensor; The light sensor includes a detection transistor; The first pole of the detection transistor is the input end of the detection module, the second pole of the detection transistor is the output end of the detection module; the gate of the detection transistor receives a gate control signal.

14. The detection circuit array according to claim 1, wherein The detection module includes a varistor; the extending directions of two adjacent varistors connected in series intersect.

15. A detection device, characterized in that, Including: The detection circuit array according to claims 1-14.

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