Plasma processing apparatus

Abstract

The embodiment of the present application discloses a kind of plasma processing device;Including: electrostatic chuck, the electrostatic chuck periphery has a connecting surface;Edge adjustment ring, it is arranged around the circumferential direction of the electrostatic chuck, and the inner wall of the edge adjustment ring is opposite with the outer wall of the electrostatic chuck;Edge ring, it is arranged around the electrostatic chuck, is arranged above the connecting surface, and is located above the edge adjustment ring;Wherein, the edge adjustment ring includes: annular body and annular protrusion towards the edge ring;The annular body is relatively close to the electrostatic chuck.

Description

Technical Field

[0001] This application relates to semiconductor devices, and to, but is not limited to, a plasma processing apparatus. Background Technology

[0002] In related technologies, plasma processing devices are typically used to perform processes such as deposition or etching on workpieces.

[0003] However, in related technologies, plasma processing devices etch certain structures during plasma processing, and the installation of these structures is difficult due to the stringent requirements on their installation location and height. Therefore, providing a plasma processing device that is easy to install and has high airtightness is an urgent problem to be solved. Summary of the Invention

[0004] In view of this, embodiments of this application provide a plasma processing apparatus, comprising:

[0005] An electrostatic chuck, wherein the electrostatic chuck has a connecting surface on its periphery;

[0006] An edge adjustment ring is arranged circumferentially around the electrostatic chuck, and the inner wall of the edge adjustment ring is opposite to the outer wall of the electrostatic chuck.

[0007] An edge ring is provided around the electrostatic chuck, positioned above the connecting surface, and located above the edge adjustment ring;

[0008] The edge adjustment ring includes an annular body and an annular protrusion protruding toward the edge ring; the annular body is relatively close to the electrostatic chuck.

[0009] In some embodiments, the edge adjustment ring further includes:

[0010] A recessed groove, extending away from the edge ring, is located on the surface of the annular body relatively close to the edge ring, and is situated between the annular protrusion and the electrostatic chuck.

[0011] In some embodiments, the plasma processing apparatus further includes:

[0012] A first heat-conducting structure is located between the annular body and the edge ring, used to bond the edge adjustment ring and the edge ring, and also used to transfer heat between the annular body and the edge ring.

[0013] In some embodiments, the first thermally conductive structure fills a portion of the groove, and there is a gap between the bottom of the first thermally conductive structure and the bottom of the groove, the volume of the gap being smaller than the volume of the groove.

[0014] In some embodiments, the plasma processing apparatus further includes:

[0015] A cooling assembly, located below the electrostatic chuck, is used to cool the electrostatic chuck.

[0016] The second heat-conducting structure is located within the annular body and is in contact with the cooling component, for conducting heat to the cooling component.

[0017] In some embodiments, the plasma processing apparatus includes:

[0018] Multiple second heat-conducting structures are located inside the annular body and are evenly spaced along the circumference of the annular body.

[0019] In some embodiments, the plasma processing apparatus further includes:

[0020] The first temperature sensing unit is located inside the edge adjustment ring and is used to detect the temperature of the edge adjustment ring to obtain a first detection result;

[0021] The second temperature sensing unit is located inside the cavity of the plasma processing device and is used to detect the temperature inside the plasma processing device to obtain a second detection result; wherein, the cavity is used to accommodate the electrostatic chuck, the edge adjustment ring and the edge ring.

[0022] In some embodiments, the plasma processing apparatus further includes:

[0023] The temperature control structure is electrically connected to the first temperature sensing unit and the second temperature sensing unit, respectively, and is used to control the temperature of the edge adjustment ring according to the first detection result and the second detection result.

[0024] In some embodiments, the plasma processing apparatus further includes:

[0025] The reminder structure is electrically connected to the first temperature sensing unit and the second temperature sensing unit respectively, and is used to output an indication signal indicating that the temperature of the plasma processing device is abnormal when the absolute value of the difference between the first detection result and the second detection result is greater than a preset threshold.

[0026] In some embodiments, the plasma processing apparatus further includes: a transmission structure and a data analysis structure;

[0027] The transmission structure is electrically connected to the temperature control structure and the data analysis structure, respectively, and is used to receive the data generated during temperature adjustment sent by the temperature control structure, and transmit the data to the data analysis structure.

[0028] The data analysis structure is used to analyze the received data and obtain analysis results.

[0029] In some embodiments, the plasma processing apparatus further includes:

[0030] A base is circumferentially arranged around the electrostatic chuck; wherein the edge adjustment ring is located between the base and the edge ring.

[0031] In some embodiments, a tie rod is provided in the base for fixing the edge adjustment ring.

[0032] In some embodiments, on the side of the electrostatic chuck where the connecting surface is provided, the electrostatic chuck further has a top surface;

[0033] In the direction perpendicular to the electrostatic chuck, the top surface of the electrostatic chuck is relatively far away from the edge adjustment ring, and the connecting surface is relatively close to the edge adjustment ring;

[0034] The portion of the edge ring that contacts the connecting surface has a stepped surface;

[0035] In the direction perpendicular to the electrostatic chuck, the top surface of the electrostatic chuck is relatively far away from the edge adjustment ring, and the stepped surface is relatively close to the edge adjustment ring.

[0036] In some embodiments, the height difference between the stepped surface and the top surface in a direction perpendicular to the electrostatic chuck ranges from 0.004 feet to 0.012 feet.

[0037] In some embodiments, the adjustable edge ring is made of ceramic.

[0038] In the plasma processing apparatus provided in this application embodiment, the apparatus comprises an electrostatic chuck, an edge adjustment ring, and an edge ring. The edge adjustment ring is arranged circumferentially around the electrostatic chuck, and the inner wall of the edge adjustment ring is aligned with the outer wall of the electrostatic chuck. The edge adjustment ring includes an annular body and an annular protrusion protruding towards the edge ring. The annular body is relatively close to the electrostatic chuck. The electrostatic chuck has a connecting surface on its periphery. The edge ring surrounds the electrostatic chuck and is disposed above the connecting surface, and is located above the edge adjustment ring. Thus, the plasma processing apparatus provided in this application embodiment has a simple structure and is easy to install. Furthermore, the edge adjustment ring is connected to the edge ring through the annular protrusion, reducing the probability of plasma entering the gap between the edge adjustment ring and the edge ring, thereby reducing the problem of particles generated during plasma etching of the internal structure of the plasma processing apparatus. Attached Figure Description

[0039] In the accompanying drawings (which are not necessarily drawn to scale), similar reference numerals may describe similar parts in different views. Similar reference numerals with different letter suffixes may indicate different examples of similar parts. The drawings illustrate, by way of example and not limitation, the various embodiments discussed herein.

[0040] Figure 1A and Figure 1B This is a partial structural diagram of a plasma processing device in related technologies;

[0041] Figure 2 This is a schematic diagram of an optional partial structure of the plasma processing apparatus provided in an embodiment of this application;

[0042] Figures 3A to 3H This is a partial structural schematic diagram of the plasma processing apparatus provided in an embodiment of this application. Detailed Implementation

[0043] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the specific technical solutions of this disclosure will be further described in detail below with reference to the accompanying drawings of the embodiments of this application. The following embodiments are used to illustrate this application, but are not intended to limit the scope of this application.

[0044] In the following description, numerous specific details are set forth in order to provide a more thorough understanding of this application. However, it will be apparent to those skilled in the art that this application can be practiced without one or more of these details. In other instances, to avoid confusion with this application, some technical features well-known in the art have not been described; that is, not all features of actual embodiments are described herein, nor are well-known functions and structures described in detail.

[0045] In the accompanying drawings, for clarity, the dimensions of layers, areas, and elements, as well as their relative dimensions, may be exaggerated. The same reference numerals denote the same elements throughout.

[0046] It should be understood that when an element or layer is referred to as "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. Conversely, when an element is referred to as "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc., may be used to describe various elements, components, areas, layers, and / or portions, these elements, components, areas, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer, or portion from another element, component, area, layer, or portion. Therefore, without departing from the teachings of this application, the first element, component, area, layer, or portion discussed below may be referred to as a second element, component, area, layer, or portion. And the discussion of a second element, component, area, layer, or portion does not imply that the first element, component, area, layer, or portion necessarily exists in this application.

[0047] Spatial relation terms such as “below,” “under,” “below,” “under,” “above,” “above,” etc., are used herein for convenience of description to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientation shown in the figure, spatial relation terms are intended to also include different orientations of the device in use and operation. For example, if the device in the figure is flipped, then the element or feature described as “below,” “under,” or “below” other elements or features will be oriented “above” other elements or features. Therefore, the exemplary terms “below” and “under” can include both above and below orientations. The device may be otherwise oriented (rotated 90 degrees or otherwise) and the spatial descriptive terms used herein will be interpreted accordingly.

[0048] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the scope of this application. When used herein, the singular forms “a,” “an,” and “the” are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprising” and / or “including,” when used in this specification, identify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups. When used herein, the term “and / or” includes any and all combinations of the associated listed items.

[0049] Figure 1A and Figure 1B This is a partial structural diagram of a plasma processing device in related technologies. (Example:) Figure 1AAs shown, in the related technology, the plasma processing device includes an electrostatic chuck 101, a base 102 surrounding the electrostatic chuck, an edge adjustment ring 103 and an edge ring 104, and the edge adjustment ring 103 and the edge ring 104 are connected by thermally conductive adhesive 105.

[0050] The plasma processing device in the related technology has a processing chamber, in which the plasma processing device is located. The plasma processing device fixes the workpiece on the electrostatic chuck by electrostatic adsorption. When the workpiece is plasma etched, the thermally conductive adhesive 105 is etched at the same time. This causes unnecessary particles to be generated during the etching of the thermally conductive adhesive. These unnecessary particles will contaminate the workpiece and reduce the workpiece yield. At the same time, the plasma etches the thermally conductive adhesive, reducing the thermal conductivity of the thermally conductive adhesive. Therefore, the thermal conductivity of the plasma processing device in the related technology is low.

[0051] In related technologies, a partial structural schematic diagram of a plasma processing device is shown below. Figure 1B As shown, the plasma processing device includes an electrostatic chuck 106, an edge adjustment ring 107 and an edge ring 108 arranged around the electrostatic chuck, and the edge adjustment ring 107 and the edge ring 108 are connected by thermally conductive adhesive 109.

[0052] The thermally conductive adhesive has adhesive properties. The connection between the edge adjustment ring 107 and the edge ring 108 is achieved by extruding and bonding the thermally conductive adhesive 109 between them. During the extrusion and bonding process, many air bubbles are generated between the thermally conductive adhesive 109 and the edge adjustment ring 107. Since these air bubbles expand or burst after the pressure changes, the adhesive properties of the thermally conductive adhesive are damaged. At the same time, the expansion or bursting of air bubbles will change the height of the thermally conductive adhesive, affecting the height of the edge ring and thus damaging the structure of the plasma device. Therefore, the relevant technology requires repeated evacuation to remove the air bubbles. However, this not only damages the adhesive properties of the thermally conductive adhesive but also affects its thermal conductivity.

[0053] Continue to refer to Figure 1B The workpiece 110 is fixed to the electrostatic chuck 106 by electrostatic adsorption. Here, the workpiece refers to the structure to be processed by the plasma processing device, such as a wafer.

[0054] In the plasma processing device of the related technology, a certain potential difference will be generated between the edge of the workpiece 110 and the edge ring 108 during the task processing. When the distance A between the workpiece 110 and the edge ring 108 is too close, a capacitor breakdown phenomenon (arcing) will occur, causing defects to appear on the edge of the workpiece 110.

[0055] To address the problems existing in related technologies, embodiments of this application provide a plasma processing apparatus. Figure 2 This is a schematic diagram of an optional partial structure of the plasma processing apparatus provided in an embodiment of this application.

[0056] like Figure 2 As shown, the plasma processing device 20 includes an electrostatic chuck 201 with a connecting surface 2011 around its periphery (as shown by the dashed box in the figure); an edge adjustment ring 202, which is arranged circumferentially around the electrostatic chuck 201, with the inner wall of the edge adjustment ring 202 facing the outer wall of the electrostatic chuck 201; and an edge ring 203, which is arranged around the electrostatic chuck 201, above the connecting surface 2011, and above the edge adjustment ring 202; wherein, the edge adjustment ring 202 includes an annular body 2021 and an annular protrusion 2022 protruding toward the edge ring 203; the annular body 2021 is relatively close to the electrostatic chuck 201.

[0057] In some embodiments, the plasma processing apparatus fixes the wafer onto an electrostatic chuck by electrostatic adsorption and performs etching or deposition processing on the wafer or other workpieces.

[0058] In some embodiments, the adjustable edge ring 202 may be made of ceramic, giving the edge ring good thermal insulation properties. The edge ring 203 may be made of silicon, silicon nitride, or silicon dioxide.

[0059] The plasma processing device provided in this application embodiment uses an edge adjustment ring and an electrostatic chuck to fix the edge ring, which has a simple structure and is easy to install. Moreover, the edge adjustment ring is connected to the edge ring through an annular protrusion, which reduces the probability of plasma entering the gap between the edge adjustment ring and the edge ring, thereby reducing the problem of particles generated by plasma etching of the internal structure of the plasma processing device.

[0060] Figures 3A to 3H This is a partial structural schematic diagram of the plasma processing apparatus provided in an embodiment of this application. Figure 3A The structure within the dashed box is a partially enlarged schematic diagram of the edge adjustment ring 202. (Refer to...) Figure 3A As shown, the edge adjustment ring 202 further includes a groove 2023 recessed in a direction away from the edge ring 203. The groove 2023 is located on the surface of the annular body 2021 that is relatively close to the edge ring 203 and is located between the annular protrusion 20 and the electrostatic chuck 201.

[0061] In some embodiments, each groove 2023 may be equally spaced on the annular body 2021, or a fixed number of grooves may be continuously arranged at equal intervals along the circumference of the annular body 2021. The present application embodiments do not limit the distribution of the grooves.

[0062] In some embodiments, the depth and width of the groove may be less than one millimeter.

[0063] Figure 3B This is a partial structural schematic diagram of the plasma processing apparatus provided in an embodiment of this application.

[0064] In some embodiments, such as Figure 3B As shown, the plasma processing device 20 further includes: a first heat-conducting structure 301, located between the annular body 2021 and the edge ring 203, for bonding the edge adjustment ring 202 and the edge ring 203, and for transferring heat between the annular body 2021 and the edge ring 203.

[0065] In some embodiments, the first thermally conductive structure may be a thermally conductive adhesive, which has adhesive properties. Therefore, the first thermally conductive structure can achieve a connection with the edge adjustment ring and the edge ring through its own adhesive properties.

[0066] In some embodiments, the annular protrusion and the electrostatic chuck fix the first thermally conductive structure between the annular protrusion and the electrostatic chuck, reducing the problem of the first thermally conductive structure changing position and thus affecting the thermal conductivity of the plasma processing device.

[0067] In the plasma processing apparatus provided in this application embodiment, the first heat-conducting structure is located between the annular protrusion and the electrostatic chuck. The annular protrusion restricts the position of the edge ring, preventing the first heat-conducting structure from being compacted and affecting its thermal conductivity. Simultaneously, during plasma etching, the plasma cannot etch the first heat-conducting structure through the gap between the edge adjustment ring and the edge ring, avoiding particle contamination of the workpiece during etching and preventing the impact on its thermal conductivity. This improves the thermal conductivity of the plasma processing apparatus and increases product yield.

[0068] based on Figure 3A and Figure 3B , Figure 3C This is a partially enlarged schematic diagram of the connection between the edge adjustment ring and the first heat-conducting structure provided in an embodiment of this application, as shown below. Figure 3C As shown, the dashed box is a partially enlarged schematic diagram of the connection between the annular body 2021 of the edge adjustment ring and the first heat-conducting structure 301.

[0069] In some embodiments, the first heat-conducting structure 301 fills a portion of the groove, and there is a gap 2024 between the bottom of the first heat-conducting structure 301 and the bottom of the groove. The volume of the gap 2024 is smaller than the volume of the groove, and there is no filler in the gap 2024.

[0070] In some embodiments, after the first heat-conducting structure is connected to the edge adjustment ring, it fills part of the groove of the edge adjustment ring. Compared with the planar structure of the edge adjustment ring in the prior art, the first heat-conducting structure in this embodiment fills part of the groove, which increases the contact area between the first heat-conducting structure and the edge adjustment ring and improves the heat conduction efficiency.

[0071] In some embodiments, the plasma processing apparatus provided in this application has a processing cavity in which the plasma processing apparatus performs plasma processing tasks.

[0072] It should be noted that, due to the grooved edge adjustment ring provided in this embodiment, after the first heat-conducting structure and the edge adjustment ring are connected, there is a gap between the bottom of the first heat-conducting structure and the bottom of the groove. This reduces the probability of air bubbles being generated when the first heat-conducting structure and the edge adjustment ring are connected, and reduces the problem of air bubbles expanding and damaging the adhesion of the first heat-conducting structure when temperature and pressure change, as well as affecting the heat conduction between the first heat-conducting structure and the edge ring.

[0073] In the plasma processing apparatus provided in this application embodiment, the grooved structure on the surface of the edge adjustment ring creates a gap in the groove when the edge adjustment ring is connected to the first heat-conducting structure. This gap is connected to the processing cavity of the plasma processing apparatus. The porous structure reduces the probability of air bubbles forming between the edge adjustment ring and the first heat-conducting structure. Therefore, it reduces the problem of air bubbles expanding or bursting after pressure changes, which could damage the adhesion of the heat-conducting adhesive. Furthermore, the expansion or bursting of air bubbles could alter the height of the heat-conducting adhesive, affecting the height of the edge ring and thus damaging the structure of the plasma apparatus. Additionally, the structure provided in this application embodiment reduces the step of removing air bubbles through evacuation, saving labor and time costs.

[0074] Figure 3D This is a partial structural schematic diagram of the plasma processing apparatus provided in an embodiment of this application.

[0075] In some embodiments, such as Figure 3D As shown, the plasma processing device 20 further includes: a cooling component 302 located below the electrostatic chuck 201 for cooling the electrostatic chuck 201; and a second heat-conducting structure 303 located within the annular body 2021, and the second heat-conducting structure 303 is in contact with the cooling component 302, and the second heat-conducting structure 303 is used to conduct heat to the cooling component 302.

[0076] In some embodiments, the plasma processing apparatus provided in this application transfers the heat generated during plasma etching to the lower part of the plasma processing apparatus, that is, to the electrostatic chuck. The cooling component is located below the electrostatic chuck and is used to reduce the temperature of the plasma processing apparatus.

[0077] In some embodiments, the plasma processing apparatus 20 includes a plurality of second heat-conducting structures 303 (not shown in the figure), which are located inside the annular body 2021 and are arranged at equal intervals along the circumference of the annular body 2021.

[0078] In some embodiments, the second heat-conducting structure can be a PN junction composed of P-type semiconductors and N-type semiconductors. When the plasma processing device is working, the second heat-conducting structure actively absorbs and releases heat to adjust the temperature of the edge adjustment ring according to the temperature of the plasma device, and transfers the heat to the cooling component 303, thereby improving the heat transfer efficiency of the plasma processing device. At the same time, by adjusting the temperature of the edge adjustment ring, the second heat-conducting structure improves the edge temperature of the workpiece when the plasma processing device is working, so that the temperature difference between the workpiece surface and the workpiece edge is small when the plasma processing device performs its task, making the workpiece surface more uniform during etching or deposition, and improving the product yield of the workpiece.

[0079] The plasma processing apparatus provided in this application provides a second heat-conducting structure that is uniformly arranged inside the edge adjustment ring. This second heat-conducting structure can adjust the temperature of the edge adjustment ring, thereby adjusting the edge etching rate of the workpiece during etching and avoiding uneven etching and etching defects caused by temperature at the workpiece edge. At the same time, the heat transfer efficiency of the plasma processing apparatus is improved by setting a cooling component.

[0080] Figure 3E This is a partial structural schematic diagram of the plasma processing apparatus provided in an embodiment of this application.

[0081] In some embodiments, such as Figure 3E As shown, the plasma processing device 20 further includes: a first temperature sensing unit 304, located inside the edge adjustment ring 202, for detecting the temperature of the edge adjustment ring 202 and obtaining a first detection result.

[0082] In some embodiments, the plasma processing apparatus 20 further includes: a second temperature sensing unit 305, located in the cavity 307 of the plasma processing apparatus (e.g., Figure 3E Within the solid frame in the image, the second temperature sensing unit 305 is used to detect the temperature inside the plasma processing device 20 and obtain a second detection result; wherein, the cavity 307 is used to accommodate structures such as the electrostatic chuck 201, the edge adjustment ring 202, the edge ring 203, and the second temperature sensing unit 305.

[0083] It should be noted that the plasma processing device 20 has a processing chamber 307, and the plasma processing device is located inside the processing chamber 307.

[0084] Here, the first temperature sensing unit 304 and the second temperature sensing unit 305 can be any type of temperature sensor, such as a laser temperature sensor. The first temperature sensing unit and the second temperature sensing unit are used for temperature detection. This application does not limit the specific type of the first temperature sensing unit and the second temperature sensing unit.

[0085] In some embodiments, the plasma processing apparatus 20 further includes a temperature control structure 306, which is electrically connected to a first temperature sensing unit 304 and a second temperature sensing unit 305, respectively, for controlling the temperature of the edge adjustment ring based on the first detection result and the second detection result.

[0086] It should be noted that the temperature control structure can obtain the temperature of the edge adjustment ring through the first detection result of the first temperature sensing unit and the temperature inside the processing cavity of the plasma processing device through the second detection result of the second temperature sensing unit. When the temperature of the edge adjustment ring is higher than the temperature inside the processing cavity, the temperature control structure adjusts the temperature of the edge adjustment ring. Here, the temperature of the edge adjustment ring can be adjusted by controlling the second heat-conducting structure.

[0087] The plasma processing device provided in this application embodiment adjusts the edge adjustment ring through the first temperature sensing unit and the second temperature sensing unit, forming a temperature regulation mechanism. This avoids the problem that the plasma processing device can only passively change the temperature and cannot actively adjust the temperature. At the same time, this application embodiment compares the temperatures obtained by the two temperature sensing units, avoiding the problem that a temperature alarm caused by a non-temperature problem by a temperature sensor will cause abnormality in the plasma processing device.

[0088] Figure 3F This is a partial structural schematic diagram of the plasma processing apparatus provided in an embodiment of this application.

[0089] In some embodiments, such as Figure 3F As shown, the plasma processing device 20 also includes an alert structure 308, which is electrically connected to the first temperature sensing unit 304 and the second temperature sensing unit 305 respectively, and is used to output an indication signal indicating that the temperature of the plasma processing device is abnormal when the absolute value of the difference between the first detection result and the second detection result is greater than a preset threshold.

[0090] Here, the preset threshold is set by technicians according to the actual situation. The preset threshold can be 20 degrees Celsius (°C) or 30 degrees Celsius. This application embodiment does not limit the value of the preset threshold.

[0091] In some embodiments, the output indication signal may be an output voice prompt or a flashing signal light. This application does not limit the specific implementation of the indication signal.

[0092] The plasma processing device provided in this application determines whether the temperature of the plasma processing device is abnormal by using the temperature values ​​obtained from the first temperature sensing unit and the second temperature sensing unit. If the temperature is abnormal, an indication signal is issued to indicate that the device is abnormal, thereby improving the safety of using the plasma processing device.

[0093] Figure 3G This is a partial structural schematic diagram of the plasma processing apparatus provided in an embodiment of this application.

[0094] In some embodiments, such as Figure 3G As shown, the plasma processing device 20 further includes a transmission structure 309 and a data analysis structure 310; wherein, the transmission structure 309 is electrically connected to the temperature control structure 308 and the data analysis structure 310 respectively, and is used to receive the data generated during temperature adjustment sent by the temperature control structure 308, and transmit the data to the data analysis structure 310; the data analysis structure 310 is used to analyze the received data and obtain the analysis results.

[0095] In some embodiments, the data analysis structure may have a display screen for displaying data and analysis results, allowing relevant technical personnel to view the data and analysis results through the display screen.

[0096] The plasma processing device provided in this application analyzes and saves the data generated when the temperature control structure adjusts the temperature, allowing technicians to review the temperature adjustment data again and adjust and maintain the plasma processing device, thereby improving the safety and service life of the plasma processing device.

[0097] Figure 3H This is a partial structural schematic diagram of the plasma processing apparatus provided in an embodiment of this application.

[0098] In some embodiments, such as Figure 3H As shown, the plasma processing device 20 further includes: a base 311, which is arranged circumferentially around the electrostatic chuck 201; wherein, the edge adjustment ring 202 is located between the base 311 and the edge ring 203.

[0099] In some embodiments, a pull rod 312 is provided in the base 311, and the pull rod 312 is used to fix the edge adjustment ring 202.

[0100] In some embodiments, the base and the pull rod may be made of conductive materials such as aluminum or copper.

[0101] In some embodiments, on the side of the electrostatic chuck 201 where the connecting surface is provided, the electrostatic chuck 201 further has a top surface 2012; wherein, in a direction perpendicular to the electrostatic chuck, the top surface 2012 of the electrostatic chuck is relatively far away from the edge adjustment ring 202, and the connecting surface is relatively close to the edge adjustment ring 202; the portion of the edge ring 203 that contacts the connecting surface has a stepped surface 2031; wherein, in a direction perpendicular to the electrostatic chuck, the top surface 2012 of the electrostatic chuck is relatively far away from the edge adjustment ring 202, and the stepped surface 2031 is relatively close to the edge adjustment ring 202.

[0102] In some embodiments, the height difference between the stepped surface 2031 and the top surface 2012 in a direction perpendicular to the electrostatic chuck ranges from 0.004 feet to 0.012 feet.

[0103] In some embodiments, when the plasma processing apparatus etches a workpiece, a potential difference is generated between the workpiece edge and the edge ring under the bombardment of plasma. When the distance between the workpiece edge and the edge ring is too close, a capacitive breakdown phenomenon occurs between the workpiece edge and the edge ring. Therefore, this embodiment of the application limits the distance between the workpiece edge and the edge ring by limiting the height difference between the step surface and the top surface, thereby reducing the problem of a potential difference and capacitive breakdown that occurs between the workpiece edge and the edge ring when performing plasma processing tasks.

[0104] In this embodiment, the position of the edge ring is fixed by the annular protrusion of the edge adjustment ring, so that the height difference between the top surface of the electrostatic chuck and the step surface of the edge ring is within a reasonable range, thus avoiding the capacitance breakdown phenomenon between the workpiece and the edge ring during etching.

[0105] In the several embodiments provided in this application, it should be understood that the disclosed devices and methods can be implemented in a non-target manner. The device embodiments described above are merely illustrative. For example, the division of units is only a logical functional division, and in actual implementation, there may be other division methods, such as: multiple units or components may be combined, or integrated into another system, or some features may be ignored or not executed. In addition, the various components shown or discussed are coupled to each other or directly coupled.

[0106] The units described above as separate components may or may not be physically separate. The components shown as units may or may not be physical units, that is, they may be located in one place or distributed across multiple network units. Some or all of the units may be selected to achieve the purpose of this embodiment according to actual needs.

[0107] The features disclosed in the several method or device embodiments provided in this application can be arbitrarily combined without conflict to obtain new method or device embodiments.

[0108] The above description is merely a specific embodiment of this disclosure, but the scope of protection of this invention is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in this invention should be included within the scope of protection of this disclosure. Therefore, the scope of protection of this disclosure should be determined by the scope of the claims.

Claims

1. A plasma processing apparatus characterized by comprising: The electrostatic chuck comprises: an electrostatic chuck having a connecting surface on the periphery thereof; a peripheral adjustment ring arranged around the periphery of the electrostatic chuck, and the inner wall of the peripheral adjustment ring is opposite to the outer wall of the electrostatic chuck; a peripheral ring arranged around the electrostatic chuck, arranged above the connecting surface, and located above the peripheral adjustment ring; wherein the peripheral adjustment ring comprises: a ring body and a ring-shaped protrusion protruding towards the peripheral ring; the ring body is relatively close to the electrostatic chuck; the peripheral adjustment ring further comprises: a groove recessed away from the peripheral ring, the groove is located on the surface of the ring body relatively close to the peripheral ring, and is located between the ring-shaped protrusion and the electrostatic chuck; a first heat conduction structure located between the ring body and the peripheral ring, for bonding the peripheral adjustment ring and the peripheral ring, and for transferring heat between the ring body and the peripheral ring; the first heat conduction structure fills part of the area of the groove, there is a gap between the bottom of the first heat conduction structure and the bottom of the groove, and the volume of the gap is smaller than the volume of the groove; a cooling assembly located below the electrostatic chuck for cooling the electrostatic chuck; a second heat conduction structure located in the ring body and in contact with the cooling assembly for conducting heat to the cooling assembly, the second heat conduction structure is a PN junction composed of a P-type semiconductor and an N-type semiconductor.

2. The plasma processing apparatus of claim 1, wherein, The plasma processing device comprises: a plurality of second heat conduction structures located inside the ring body and arranged equidistantly along the periphery of the ring body.

3. The plasma processing apparatus of claim 1, wherein, The plasma processing device further comprises: a first temperature sensing unit located in the peripheral adjustment ring for detecting the temperature of the peripheral adjustment ring to obtain a first detection result; a second temperature sensing unit located in the cavity of the plasma processing device for detecting the temperature in the plasma processing device to obtain a second detection result; wherein the cavity is used to accommodate the electrostatic chuck, the peripheral adjustment ring and the peripheral ring.

4. The plasma processing apparatus of claim 3, wherein, The plasma processing device further comprises: a temperature control structure electrically connected with the first temperature sensing unit and the second temperature sensing unit respectively, for controlling the temperature of the peripheral adjustment ring according to the first detection result and the second detection result.

5. The plasma processing apparatus of claim 4, wherein, The plasma processing device further comprises: a reminding structure electrically connected with the first temperature sensing unit and the second temperature sensing unit respectively, for outputting an indication signal indicating that the temperature of the plasma processing device is abnormal when the absolute value of the difference between the first detection result and the second detection result is greater than a preset threshold value.

6. The plasma processing apparatus of claim 4, wherein, The plasma processing device further comprises a transmission structure and a data analysis structure; the transmission structure is electrically connected with the temperature control structure and the data analysis structure respectively, for receiving data generated when the temperature control structure adjusts the temperature, and transmitting the data to the data analysis structure; the data analysis structure is used to analyze the received data to obtain an analysis result.

7. The plasma processing apparatus of claim 1, wherein, The plasma processing device further comprises: A base is disposed around a circumference of the electrostatic chuck; wherein the edge tuning ring is disposed between the base and the edge ring.

8. The plasma processing apparatus of claim 7, wherein, A pull rod is disposed in the base to secure the edge tuning ring.

9. The plasma processing apparatus of claim 1, wherein, The electrostatic chuck further has a top surface on a side of the electrostatic chuck where the connection surface is disposed; wherein, in a direction perpendicular to the electrostatic chuck, the top surface of the electrostatic chuck is relatively farther away from the edge tuning ring and the connection surface is relatively closer to the edge tuning ring; The portion of the edge ring that is in contact with the connection surface has a stepped surface; wherein, in a direction perpendicular to the electrostatic chuck, the top surface of the electrostatic chuck is relatively farther away from the edge tuning ring and the stepped surface is relatively closer to the edge tuning ring.

10. The plasma processing apparatus of claim 9, wherein, A height difference between the stepped surface and the top surface in a direction perpendicular to the electrostatic chuck ranges from 0.004 feet to 0.012 feet.

11. The plasma processing apparatus of claim 1, wherein, The edge tuning ring is made of ceramic.

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