Method for Measuring Edge Minority Carrier Concentration and Reverse Bias Leakage Current and Related Equipment

Abstract

Embodiments of the present disclosure provide a method for measuring the edge minority carrier concentration and reverse bias leakage current, and related devices, for measuring semiconductor devices. The semiconductor device includes an N-type region, a P-type region, and a PN junction between the N-type region and the P-type region. The PN junction includes a depletion region. The method includes: obtaining an alternating current signal flowing through the PN junction when the PN junction is in a reverse bias state, where the alternating current signal is obtained by applying an excitation voltage signal with a predetermined perturbation frequency to the N-type region; obtaining a diffusion impedance at the predetermined perturbation frequency according to the excitation voltage signal and the alternating current signal; obtaining an equivalent resistance of the depletion region when the edge minority carriers at the junction of the depletion region and the N-type region are in a non-responsive state and an equivalent resistance of the diffusion region when the edge minority carriers are in a diffusion response state according to the diffusion impedance; and obtaining the edge minority carrier concentration according to the first equivalent resistance and the second equivalent resistance. The method for measuring the edge minority carrier concentration in the embodiments of the present disclosure can accurately obtain the edge minority carrier concentration, and the method is simple.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor detection technologies, and in particular, to a method for determining the minority carrier concentration at the edge of a semiconductor device, a method for determining the reverse bias leakage of a semiconductor device, and related equipment. Background Art

[0002] When a PN junction is in a reverse bias state, reverse bias leakage of the PN junction will occur, thereby increasing the power consumption of the device. The magnitude of the reverse bias leakage of the PN junction is related to the minority carrier concentration at the edge. In the related art, there is no simple and accurate method for determining the minority carrier concentration at the edge.

[0003] The above information disclosed in the background art section is only used to enhance the understanding of the background of the present disclosure. Therefore, it may include information related to technologies that are not known to those of ordinary skill in the art. Summary of the Invention

[0004] Embodiments of the present disclosure provide a method for determining the minority carrier concentration at the edge of a semiconductor device and reverse bias leakage, and related equipment, which can accurately determine the minority carrier concentration at the edge when the PN junction is in a reverse bias state and the reverse bias leakage of the semiconductor device, and the method is simple.

[0005] Embodiments of the present disclosure provide a method for determining the minority carrier concentration at the edge of a semiconductor device. The semiconductor device includes an N-type region, a P-type region, and a PN junction between the N-type region and the P-type region. The PN junction includes a depletion region. The method includes: obtaining an alternating current signal flowing through the PN junction when the PN junction is in a reverse bias state, where the alternating current signal is obtained by applying an excitation voltage signal with a predetermined perturbation frequency to the N-type region; obtaining a diffusion impedance at the predetermined perturbation frequency according to the excitation voltage signal and the alternating current signal; obtaining an equivalent resistance of the depletion region when the minority carriers at the junction of the depletion region and the N-type region are in a non-responsive state and an equivalent resistance of the diffusion region when the minority carriers are in a diffusion response state according to the diffusion impedance; and obtaining the minority carrier concentration according to the equivalent resistance of the depletion region and the equivalent resistance of the diffusion region.

[0006] According to some embodiments of the present disclosure, obtaining the equivalent resistance of the depletion region when the minority carriers at the junction of the depletion region and the N-type region are in a non-responsive state and the equivalent resistance of the diffusion region when the minority carriers are in a diffusion response state according to the diffusion impedance includes: splitting the diffusion impedance into a real part and an imaginary part; and obtaining the equivalent resistance of the depletion region and the equivalent resistance of the diffusion region according to the real part and the imaginary part.

[0007] According to some embodiments of the present disclosure, obtaining the depletion region equivalent resistance and the diffusion region equivalent resistance according to the real part and the imaginary part includes: drawing a Nyquist diagram according to the real part and the imaginary part; determining, according to the Nyquist diagram, a first real part, a second real part, and a third real part when the imaginary part is zero as a first equivalent resistance, a second equivalent resistance, and a third equivalent resistance respectively, where the first real part is less than the second real part, and the second real part is less than the third real part; obtaining the depletion region equivalent resistance according to the first equivalent resistance and the second equivalent resistance, and obtaining the diffusion region equivalent resistance according to the second equivalent resistance and the third equivalent resistance.

[0008] According to some embodiments of the present disclosure, obtaining the edge minority carrier concentration according to the depletion region equivalent resistance and the diffusion region equivalent resistance includes: obtaining a direct current, the diffusion region thickness of the edge minority carriers, and the diffusion coefficient of the edge minority carriers, where the direct current is the current flowing through the PN junction when no alternating voltage signal is applied to the N-type region; obtaining the edge minority carrier concentration according to the direct current, the diffusion region thickness, the diffusion coefficient, the depletion region equivalent resistance, and the diffusion region equivalent resistance.

[0009] According to some embodiments of the present disclosure, the edge minority carriers have a minority carrier diffusion characteristic frequency. When the predetermined perturbation frequency is greater than a first preset value compared to the minority carrier diffusion characteristic frequency, the edge minority carriers are in the non-response state; when the predetermined perturbation frequency is less than a second preset value compared to the minority carrier diffusion characteristic frequency, the edge minority carriers are in the diffusion response state.

[0010] According to some embodiments of the present disclosure, a first power supply voltage is applied to the N-type region, and a second power supply voltage is applied to the P-type region to make the PN junction in the reverse bias state, where the first power supply voltage is greater than the second power supply voltage.

[0011] According to some embodiments of the present disclosure, the semiconductor device is an NMOS transistor, the P-type region is the P-type substrate of the NMOS transistor, and the N-type region is the N-type drain of the NMOS transistor; wherein, a first power supply voltage is applied to the N-type drain, a second power supply voltage is applied to the P-type substrate, and the P-type substrate is short-circuited with the source and gate of the NMOS transistor to make the PN junction in the reverse bias state, and the first power supply voltage is greater than the second power supply voltage.

[0012] According to some embodiments of the present disclosure, the predetermined perturbation frequency of the excitation voltage signal is 100 kHz to 10 mHz.

[0013] According to some embodiments of the present disclosure, the voltage value of the excitation voltage signal is 10 mV to 50 mV.

[0014] An embodiment of the present disclosure also provides a device for measuring the minority carrier concentration at the edge of a semiconductor device. The semiconductor device includes an N-type region, a P-type region, and a PN junction between the N-type region and the P-type region. The PN junction includes a depletion region. The device includes a receiving unit and a processing unit.

[0015] The receiving unit is configured to obtain an alternating current signal flowing through the PN junction when the PN junction is in a reverse bias state. The alternating current signal is obtained by applying an excitation voltage signal with a predetermined perturbation frequency to the N-type region.

[0016] The processing unit is configured to obtain a diffusion impedance at the predetermined perturbation frequency based on the excitation voltage signal and the alternating current signal.

[0017] The processing unit is further configured to obtain an equivalent resistance of the depletion region when the minority carriers at the junction of the depletion region and the N-type region are in a non-responsive state and an equivalent resistance of the diffusion region when the minority carriers are in a diffusion-responsive state based on the diffusion impedance.

[0018] The processing unit is further configured to obtain the minority carrier concentration at the edge based on the equivalent resistance of the depletion region and the equivalent resistance of the diffusion region.

[0019] According to some embodiments of the present disclosure, the processing unit is further configured to split the diffusion impedance into a real part and an imaginary part; and obtain the equivalent resistance of the depletion region and the equivalent resistance of the diffusion region based on the real part and the imaginary part.

[0020] An embodiment of the present disclosure also provides a method for measuring the reverse bias current of a semiconductor device. The semiconductor device includes an N-type region, a P-type region, and a PN junction between the N-type region and the P-type region. The PN junction includes a depletion region. The method includes: obtaining an alternating current signal flowing through the PN junction when the PN junction is in a reverse bias state. The alternating current signal is obtained by applying an excitation voltage signal with a predetermined perturbation frequency to the N-type region; obtaining a diffusion impedance at the predetermined perturbation frequency based on the excitation voltage signal and the alternating current signal; obtaining an equivalent resistance of the depletion region when the minority carriers at the junction of the depletion region and the N-type region are in a non-responsive state and an equivalent resistance of the diffusion region when the minority carriers are in a diffusion-responsive state based on the diffusion impedance; obtaining the minority carrier concentration at the edge based on the equivalent resistance of the depletion region and the equivalent resistance of the diffusion region; and obtaining reverse bias leakage current based on the minority carrier concentration at the edge.

[0021] According to some embodiments of the present disclosure, the method further includes: obtaining the diffusion coefficient of the edge minority carriers, the bulk minority carrier concentration, and the thickness of the diffusion region of the edge minority carriers; obtaining the reverse bias leakage current based on the diffusion coefficient, the bulk minority carrier concentration, the thickness of the diffusion region, and the edge minority carrier concentration.

[0022] An embodiment of the present disclosure also provides a computer device, including a processor, a memory, and an input / output interface; the processor is respectively connected to the memory and the input / output interface, wherein the input / output interface is configured to receive data and output data, the memory is configured to store a computer program, and the processor is configured to call the computer program to cause the computer device to execute the method described in any one of the above embodiments.

[0023] An embodiment of the present disclosure also provides a computer-readable storage medium storing a computer program, which is adapted to be loaded and executed by a processor to cause a computer device having the processor to execute the method described in any one of the above embodiments.

[0024] From the above technical solutions, the method for measuring the edge minority carrier concentration of the semiconductor device according to the embodiments of the present disclosure has at least one of the following advantages and positive effects:

[0025] In the embodiments of the present disclosure, by applying an excitation voltage signal with a predetermined perturbation frequency to the N-type region, a corresponding alternating current signal can be obtained, and then the diffusion impedance at the predetermined perturbation frequency can be obtained. The equivalent resistance of the depletion region when the edge minority carriers are in a non-responsive state and the equivalent resistance of the diffusion region when the edge minority carriers are in a diffusion-responsive state are obtained through the diffusion impedance to obtain the edge minority carrier concentration. In the embodiments of the present disclosure, the edge minority carrier concentration can be obtained only by applying perturbation signals with different frequencies (i.e., excitation voltage signals with a predetermined perturbation frequency) to the PN junction in the reverse bias state. The method is simple and has high accuracy. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] By referring to the accompanying drawings and describing its exemplary embodiments in detail, the above and other features and advantages of the present disclosure will become more apparent.

[0027] Figure 1 It is a flowchart of the method for measuring the edge minority carrier concentration shown in some embodiments of the present disclosure;

[0028] Figure 2 It is a schematic diagram of a semiconductor device shown in some embodiments of the present disclosure;

[0029] Figure 3 It is an edge minority carrier response diagram when the predetermined perturbation frequency is much greater than the minority carrier diffusion characteristic frequency shown in some embodiments of the present disclosure;

[0030] Figure 4 The edge minority carrier response diagram when the predetermined perturbation frequency is much smaller than the minority carrier diffusion characteristic frequency, shown in some embodiments of the present disclosure;

[0031] Figure 5 The edge minority carrier response diagram when the predetermined perturbation frequency is close to the minority carrier diffusion characteristic frequency, shown in some embodiments of the present disclosure;

[0032] Figure 6 The Nyquist diagram of the diffusion impedance, shown in some embodiments of the present disclosure;

[0033] Figure 7 The framework diagram of the method for measuring the edge minority carrier concentration, shown in some embodiments of the present disclosure;

[0034] Figure 8 The block diagram of the device for measuring the edge minority carrier concentration, shown in some embodiments of the present disclosure;

[0035] <C Figure 9 The structural schematic diagram of a computer device, shown in some embodiments of the present disclosure;

[0036] Figure 10 The schematic diagram of a computer-readable storage medium, shown in some embodiments of the present disclosure. Detailed implementation manners

[0037] Example embodiments will now be described more fully with reference to the accompanying drawings. However, the example embodiments can be implemented in various forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the example embodiments to those skilled in the art. Like reference numerals in the figures denote like or similar structures, and thus their detailed descriptions will be omitted.

[0038] In the following description of different exemplary embodiments of the present disclosure, reference is made to the accompanying drawings which form a part of the present disclosure and in which are shown, by way of example, different exemplary structures that can implement various aspects of the present disclosure. It should be understood that other specific solutions of components, structures, exemplary devices, systems and steps can be used and structural and functional modifications can be made without departing from the scope of the present disclosure. Also, although terms such as "above", "between", "inside" etc. may be used in this specification to describe different exemplary features and elements of the present disclosure, these terms are used herein for convenience only, for example, according to the directions of the examples in the drawings. Nothing in this specification should be construed as requiring a specific three-dimensional orientation of the structure to fall within the scope of the present disclosure. In addition, the terms "first", "second", etc. in the claims are used only as labels and are not numerical limitations on their objects.

[0039] The flowcharts shown in the accompanying drawings are merely illustrative, and do not necessarily include all content and operations / steps, nor do they necessarily need to be executed in the described order. For example, some operations / steps can be decomposed, while some operations / steps can be combined or partially combined. Therefore, the actual execution order may change according to the actual situation.

[0040] In addition, in the description of the present disclosure, the meaning of "a plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0041] A semiconductor device has an N-type region and a P-type region, and a PN junction is formed between the N-type region and the P-type region. Taking an NMOS (N-Metal-Oxide-Semiconductor) transistor as an example, its N-type drain is connected to a high potential, and its P-type substrate is connected to a low potential, resulting in the PN junction being in a reverse-biased state and there being reverse-bias leakage. The reverse-bias leakage will affect the performance of the semiconductor device. The magnitude of the reverse-bias leakage is usually controlled by the diffusion of minority carriers. The diffusion rate of minority carriers is related to the concentration gradient, and the concentration gradient is related to the minority carrier concentration at the edge. Therefore, by obtaining the minority carrier concentration at the edge, the reverse-bias leakage situation can be obtained.

[0042] Based on this, as Figures 1 to 7 shown, the present disclosure provides a method for measuring the minority carrier concentration at the edge of a semiconductor device. Among them, Figure 1 shows a flowchart of the method for measuring the minority carrier concentration at the edge, Figure 2 shows a schematic diagram of a semiconductor device, Figures 3 to 5 shows the response diagram of minority carriers at the edge when different predetermined perturbation frequencies are applied, Figure 6 shows the Nyquist diagram of the diffusion impedance, Figure 7 shows a framework diagram of the method for measuring the minority carrier concentration at the edge. As Figure 1 shown, the method for measuring the minority carrier concentration at the edge provided by the embodiments of the present disclosure includes the following steps: S110 to S140.

[0043] S110: Obtain an alternating current signal flowing through the PN junction when the PN junction is in a reverse-biased state. The alternating current signal is obtained by applying an excitation voltage signal with a predetermined perturbation frequency to the N-type region.

[0044] As Figure 2As shown in the figure, the semiconductor device according to an embodiment of the present disclosure includes an N-type region, a P-type region, and a PN junction between the N-type region and the P-type region. The PN junction includes a depletion region A. For example, an NMOS transistor has a P-type substrate, an N-type source and drain. Then, carrier diffusion will occur between the P-type substrate and the N-type source and drain. For example, holes diffuse from the P-type substrate to the N-type source and drain, and electrons diffuse from the P-type source and drain to the P-type substrate. When equilibrium is reached, a depletion region A will appear in the PN junction at the boundary between the two. When a reverse bias voltage is applied across the PN junction, the width of the depletion region A will increase, forming a small reverse bias current. This reverse bias current is the reverse bias leakage current, which will cause unnecessary power consumption.

[0045] In the embodiment of the present disclosure, a first power supply voltage is applied to the N-type region, and a second power supply voltage is applied to the P-type region to make the PN junction in a reverse bias state. The first power supply voltage is greater than the second power supply voltage, that is, an external electric field is applied. The N-type region is applied with a high potential, and the P-type region is applied with a low potential. The direction of the external electric field is the same as the direction of the built-in electric field formed by the carrier diffusion movement in the PN junction, making the PN junction in a reverse bias state.

[0046] In the embodiment of the present disclosure, as Figure 7 shown, the magnitude of the predetermined perturbation frequency of the excitation voltage signal is adjusted. When the PN junction is in a reverse bias state, a signal with a predetermined perturbation frequency is applied to it, that is, an excitation voltage signal with a predetermined perturbation frequency is applied to the N-type region. The semiconductor device in the reverse bias state responds to the excitation voltage signal, which is reflected in the output of a corresponding alternating current signal. This alternating current signal is the state variable of the semiconductor device. The response speeds of different state variables are different. Therefore, in the embodiment of the present disclosure, excitation voltage signals with different frequencies can be applied, and the different alternating current signals generated can be analyzed one by one to obtain the diffusion information of the minority carriers at the edge. After calculation and processing, the minority carrier concentration at the edge can be obtained.

[0047] As Figure 2 shown, the region between the depletion region A and the bulk region B of the semiconductor device is the diffusion region of minority carriers. Among them, the bulk region B is the region provided by the electromigration of majority carriers, and its doping concentration is determined, that is, the bulk minority carrier concentration C1 of the bulk region B is determined. The minority carriers located at both edges of the depletion region A are the minority carriers at the edge in the embodiment of the present disclosure. The method in the embodiment of the present disclosure is used to measure the minority carrier concentration C0 at the edge.

[0048] S120: Obtain the diffusion impedance at the predetermined perturbation frequency according to the excitation voltage signal and the alternating current signal.

[0049] As Figure 1 and Figure 7As shown in the figure, in the embodiments of the present disclosure, the diffusion impedance at each frequency is the ratio of the excitation voltage signal to the output AC current signal. Define the diffusion impedance as Z, the excitation voltage signal as ΔV, and the AC current signal as ΔI. Then, the diffusion impedance at each frequency can be obtained through the following formula (1):

[0050]

[0051] S130: Obtain the depletion region equivalent resistance when the minority carriers at the junction of the depletion region A and the N-type region are in a non-responsive state and the diffusion region equivalent resistance when the minority carriers are in a diffusion response state according to the diffusion impedance.

[0052] The minority carriers have a minority carrier diffusion characteristic frequency, which is the reciprocal of the time constant of the minority carriers, and can also be understood as the reciprocal of the relaxation time of the minority carriers. That is to say, the minority carrier diffusion characteristic frequency is a parameter characterizing the response speed of the minority carrier diffusion to the perturbation signal. The larger the minority carrier diffusion characteristic frequency, the shorter the delay time of the diffusion response of the minority carriers after the perturbation signal is sent. As Figure 3 shown, when the predetermined perturbation frequency is greater than a first preset value compared to the minority carrier diffusion characteristic frequency, the minority carriers at the edge are in a non-responsive state. As Figure 4 shown, when the predetermined perturbation frequency is less than a second preset value compared to the minority carrier diffusion characteristic frequency, the minority carriers at the edge are in a diffusion response state. As Figure 5 shown, when the predetermined perturbation frequency is close to the minority carrier diffusion characteristic frequency, that is, define the difference between the minority carrier diffusion characteristic frequency and the second preset value as the first boundary, and the sum of the minority carrier diffusion characteristic frequency and the first preset value as the second boundary. Then Figure 5 the predetermined perturbation frequency in is between the first boundary and the second boundary.

[0053] Specifically, as Figure 3 shown, when the predetermined perturbation frequency is much higher than the minority carrier diffusion characteristic frequency, the minority carriers have not responded yet, and the excitation voltage signal starts to be reverse-excited. In this case, the minority carrier diffusion does not respond to the perturbation, and this state is called the minority carriers at the edge being in a non-responsive state. However, due to the application of the excitation voltage signal, there will still be an AC current signal output. The impedance obtained in this state is the impedance of the depletion region A, and the depletion region equivalent resistance is the resistance of the depletion region A.

[0054] As Figure 4 shown, when the predetermined perturbation frequency is much lower than the minority carrier diffusion characteristic frequency, the diffusion response of the minority carriers is in the same frequency as the excitation voltage signal. This state is called the minority carriers at the edge being in a diffusion response state, and the impedance obtained in this state is the impedance of the minority carrier diffusion region, and the diffusion region equivalent resistance is the resistance of the minority carrier diffusion region.

[0055] As Figure 5As shown in FIG, when the predetermined perturbation frequency is close to the characteristic frequency of minority carrier diffusion, the diffusion response of the minority carriers in the finite layer lags behind the excitation voltage signal by π / 4, and the minority carriers respond to the perturbation frequency. The imaginary part of the impedance obtained in this state reaches a maximum value (i.e., in the Nyquist diagram below, the impedance corresponding to the extreme point of the imaginary part of the second response arc in the figure is the impedance in this state).

[0056] The first preset value is the difference between the minimum predetermined perturbation frequency and the minority carrier diffusion characteristic frequency, when the predetermined perturbation frequency is applied to cause the edge minority carriers to enter the non-responsive state. The second preset value is the difference between the minority carrier diffusion characteristic frequency and the maximum predetermined perturbation frequency, when the predetermined perturbation frequency is applied to cause the edge minority carriers to enter the aforementioned diffusion response state. Therefore, those skilled in the art can set the first and second preset values based on the minority carrier diffusion characteristic frequency, and no specific limitation is imposed herein.

[0057] In the embodiment of the present disclosure, S120 includes: splitting the diffusion impedance at each frequency into a real part and an imaginary part, and obtaining the depletion region equivalent resistance and the diffusion region equivalent resistance according to the real part and the imaginary part.

[0058] Further, if Figure 6 As shown, according to the real part and the imaginary part, the depletion region equivalent resistance and the diffusion region equivalent resistance are obtained, including: drawing a Nyquist diagram according to the real part and the imaginary part, and according to the Nyquist diagram, determining that the first real part, the second real part and the third real part when the imaginary part is zero are respectively the first equivalent resistance R1, the second equivalent resistance R2 and the third equivalent resistance R3. As can be seen from the figure, the first real part is smaller than the second real part, and the second real part is smaller than the third real part. The depletion region equivalent resistance R is obtained according to the first equivalent R1 and the second equivalent resistance R2. t , obtain the diffusion region equivalent resistance R according to the second equivalent resistance R2 and the third equivalent resistance R3 d .

[0059] Specifically, according to Z=Z RE +jZ IM , where Z RE represents the real part, Z IM Denotes the imaginary part, and j is the imaginary unit. Split the diffusion impedance at each frequency into real and imaginary parts, and plot the Nyquist plot of the real and imaginary parts of the diffusion impedance at these frequencies.

[0060] There are two response arcs in the Nyquist diagram. The frequency corresponding to the first response arc is a predetermined disturbance frequency that is much larger than the characteristic frequency of minority carrier diffusion, such as Figure 6As shown, the real part corresponding to the end point with zero imaginary part on the left side of the first response arc in the figure is the first real part, and the real part corresponding to the end point with zero imaginary part on the right side is the second real part. The first real part is the equivalent resistance of the bulk region B, that is, the first equivalent resistance R1 is the equivalent resistance of the bulk region B. The second equivalent resistance R2 corresponding to the second real part is the sum of the equivalent resistance of the bulk region B (the first equivalent resistance R1) and the equivalent resistance of the depletion region R t . The equivalent resistance Rt of the depletion region is the equivalent resistance of the depletion region A, then R t = R2 - R1.

[0061] The end point with zero imaginary part on the left side of the second response arc in the figure coincides with the end point with zero imaginary part on the right side of the first response arc. The real part corresponding to the end point with zero imaginary part on the right side of the second response arc in the figure is the third real part. The third equivalent resistance R3 corresponding to the third real part is the sum of the equivalent resistance of the bulk region B, the equivalent resistance of the depletion region R t and the equivalent resistance of the diffusion region R d . Among them, the equivalent resistance R d of the diffusion region with a thickness of L is the equivalent resistance of the diffusion region, then R d = R3 - R2 = R3 - R t - R1.

[0062] Based on this, by drawing the Nyquist diagram, the equivalent resistance R t of the depletion region and the equivalent resistance R d of the diffusion region can be accurately obtained, and the drawing process and the calculation process are simple.

[0063] S140: Obtain the edge minority carrier concentration according to the equivalent resistance of the depletion region and the equivalent resistance of the diffusion region.

[0064] In the embodiment of the present disclosure, S140 includes: obtaining the direct current, the diffusion region thickness of the edge minority carriers, and the diffusion coefficient of the edge minority carriers, where the direct current is the current flowing through the PN junction when no AC voltage signal is applied to the N-type region; obtaining the edge minority carrier concentration according to the direct current, the diffusion region thickness, the diffusion coefficient, the equivalent resistance of the depletion region, and the equivalent resistance of the diffusion region.

[0065] Specifically, in the case of finite-layer diffusion, the equivalent resistance of the diffusion impedance (the equivalent resistance R d ) of the diffusion region satisfies the following formula (2):

[0066]

[0067] Among them, R d is the equivalent resistance of the minority carrier diffusion region, R tR is the equivalent resistance of the depletion region A, I is the direct current of the externally applied electric field applied to the semiconductor device, L is the thickness of the diffusion region of minority carriers at the edge, F is the Faraday constant, and D is the diffusion coefficient of minority carriers at the edge.

[0068] Diffusion region equivalent resistance R d And the depletion region equivalent resistance R t Can be obtained from the above Nyquist diagram. The direct current I and the thickness L of the diffusion region of minority carriers at the edge can be directly measured. The Faraday constant F and the diffusion coefficient D of minority carriers at the edge can both be obtained by query. Therefore, through the above formula (2), the final minority carrier concentration C0 at the edge can be obtained.

[0069] It can be seen from the above that the method for measuring the minority carrier concentration at the edge in the embodiments of the present disclosure can obtain the minority carrier concentration at the edge only by applying perturbation signals with different frequencies to the PN junction in the reverse bias state. The method is simple and has high accuracy.

[0070] In some embodiments, the semiconductor device is an NMOS transistor, the P-type region is the P-type substrate of the NMOS transistor, and the N-type region is the N-type drain of the NMOS transistor. Among them, a first power supply voltage is applied to the N-type drain, a second power supply voltage is applied to the P-type substrate, and the P-type substrate is short-circuited with the source and gate of the NMOS transistor to make the PN junction in the reverse bias state. The first power supply voltage is greater than the second power supply voltage, the first power supply voltage is at a high potential. For example, the second power supply voltage is at a low potential, for example, it can be VSS. In other embodiments, the semiconductor device can also be a PMOS transistor.

[0071] The measurement method in the embodiments of the present disclosure can accurately measure the minority carrier concentration at the edge when the NMOS transistor in the above embodiments is in the reverse bias state, and the method is simple. In addition, the reverse bias leakage situation of the NMOS transistor can be obtained according to the minority carrier concentration at the edge, so as to further make an adaptive adjustment to the transistor to optimize the electrical performance of the above transistor.

[0072] In some embodiments, the predetermined perturbation frequency of the excitation voltage signal is from 100 kHz to 10 mHz. Here, kHz is kilohertz and mHz is millihertz. When the predetermined perturbation frequency is in kilohertz, it is much greater than the minority carrier diffusion characteristic frequency, such that the minority carriers are in the non-responsive state in the above embodiments. When the predetermined perturbation frequency is in millihertz, it is much less than the minority carrier diffusion characteristic frequency, such that the minority carriers are in the diffusion response state in the above embodiments. Specifically, in addition to the above two end values, the predetermined perturbation frequency can also be 90 kHz, 80 kHz, 60 kHz, 50 kHz, 30 kHz, 20 kHz, 9000 Hz, 5000 Hz, 2000 Hz, 1000 Hz, 800 Hz, 500 Hz, 50 Hz, 900 mHz, 500 mHz, 200 mHz, 90 mHz, 50 mHz, 30 mHz, and no special limitation is made here.

[0073] In some embodiments, the voltage value of the excitation voltage signal is from 10 mV to 50 mV. Here, mV is millivolt. In addition to the above two end values, the voltage value of the excitation voltage signal can also be 20 mV, 25 mV, 30 mV, 35 mV, 40 mV, 45 mV, and no special limitation is made here. This voltage value ΔV is much smaller than the voltage VDD of the external electric field applied by the semiconductor device and is only used to form a perturbation to avoid affecting the electrical performance of the semiconductor device.

[0074] This embodiment also provides a method for measuring the reverse bias leakage current of a semiconductor device, which is used to measure the reverse bias leakage current of the PN junction in the semiconductor device. The semiconductor device includes an N-type region, a P-type region, and a PN junction between the N-type region and the P-type region. The PN junction includes a depletion region. The method for measuring the reverse bias leakage current includes: obtaining an alternating current signal flowing through the PN junction when the PN junction is in the reverse bias state, where the alternating current signal is obtained by applying an excitation voltage signal with a predetermined perturbation frequency to the N-type region; obtaining the diffusion impedance at the predetermined perturbation frequency according to the excitation voltage signal and the alternating current signal; obtaining the depletion region equivalent resistance when the edge minority carriers at the junction of the depletion region and the N-type region are in the non-responsive state and the diffusion region equivalent resistance when the edge minority carriers are in the diffusion response state according to the diffusion impedance; obtaining the edge minority carrier concentration according to the depletion region equivalent resistance and the diffusion region equivalent resistance.

[0075] Specifically, the edge minority carrier concentration can be obtained according to the method for measuring the edge minority carrier concentration in any of the above embodiments, and details are not described here again.

[0076] In some embodiments, the method may further include: obtaining the diffusion coefficient D of the edge minority carriers, the bulk minority carrier concentration C1, and the diffusion region thickness L of the edge minority carriers; obtaining the reverse bias leakage current of the PN junction according to the diffusion coefficient D of the edge minority carriers, the bulk minority carrier concentration C1, the diffusion region thickness L, and the edge minority carrier concentration C0.

[0077] Specifically, the reverse bias leakage current satisfies the following formula (3):

[0078]

[0079] Wherein, the bulk minority carrier concentration C1 is determined, and the diffusion coefficient D of the edge minority carriers can be obtained by query. The diffusion region thickness L can be obtained from the measurement method of the minority carrier diffusion region thickness in the following embodiments.

[0080] Therefore, after obtaining the edge minority carrier concentration, the reverse bias leakage current can be directly obtained through the above formula (3). The semiconductor device can be appropriately adjusted according to the reverse bias leakage current situation to ensure the optimal electrical performance of the semiconductor device. In addition, after obtaining the edge minority carrier concentration, the reverse bias leakage current can be directly obtained without other operations, making the acquisition method simpler.

[0081] In some embodiments, the above diffusion region thickness L (also referred to as the minority carrier diffusion region thickness L) can be obtained by the measurement method of the minority carrier diffusion region thickness. The method includes:

[0082] Obtain the alternating current signal flowing through the PN junction when the PN junction is in the reverse bias state. The alternating current signal is obtained by applying an excitation voltage signal with a predetermined perturbation frequency to the N-type region. According to the predetermined perturbation frequency, obtain the phase difference between the alternating current signal and the excitation voltage signal.

[0083] In the embodiments of the present disclosure, the alternating current signal is a response signal output in response to the excitation voltage signal. At the predetermined perturbation frequency, there is a phase difference between the two, and the phase difference can also be referred to as the argument, and the phase difference can be represented by Φ. At different predetermined perturbation frequencies, there are different phase differences Φ between the alternating current signal and the excitation voltage signal, and the phase difference Φ between the two can be obtained by measurement.

[0084] Obtaining the first parameter according to the phase difference and the predetermined perturbation frequency may include the following A to E.

[0085] A: Obtain the tangent value of the phase difference.

[0086] Specifically, after obtaining the phase differences Φ between the alternating current signal and the excitation voltage signal at different predetermined perturbation frequencies, calculate the tangent value tanΦ of each phase difference Φ.

[0087] B: Draw a Bode plot according to the tangent value and the predetermined perturbation frequency.

[0088] After obtaining the tangent value tanΦ of the phase difference Φ, corresponding to the predetermined perturbation frequency, obtain the set of points of the tangent value of the phase difference and the corresponding predetermined perturbation frequency {(tanΦ1, f1), (tanΦ2, f2)... (tanΦ n , fn )}, where n is a positive integer greater than 2. The predetermined perturbation frequency is denoted by f. A Bode plot is drawn based on this point set to more clearly and intuitively show the corresponding relationship between the tangent value tanΦ and the predetermined perturbation frequency f.

[0089] C: Determine the response frequency range of the diffusion region of minority carriers.

[0090] Obtain the diffusion impedance at the predetermined perturbation frequency according to the alternating current signal and the excitation voltage signal. In the embodiments of the present disclosure, the diffusion impedance at each frequency is the ratio of the excitation voltage signal to the output alternating current signal. Define the diffusion impedance as Z, the excitation voltage signal as ΔV, and the alternating current signal as ΔI. Then, the diffusion impedance at each frequency can be obtained through the formula (1) in the above embodiments.

[0091] Split each diffusion impedance into a real part and an imaginary part. Specifically, Z = Z RE +jZ IM , where Z represents the diffusion impedance, Z RE represents the real part, Z IM represents the imaginary part, and j represents the imaginary unit. Based on this, split the diffusion impedance at each frequency into a real part and an imaginary part (Z RE , Z IM ).

[0092] Obtain the response frequency range of the diffusion region of minority carriers according to the real part and the imaginary part. Specifically, according to the real part and the imaginary part (Z RE , Z IM ) split at each predetermined perturbation frequency, as Figure 6 shown, draw a Nyquist plot.

[0093] According to the Nyquist plot, determine that the frequency corresponding to the second response arc is the response frequency range of the diffusion region of minority carriers (the second response arc is the Figure 6 rightmost one among the two response arcs in

[0094] D: Select the tangent value to be calculated corresponding to the response frequency range of the diffusion region in the Bode plot.

[0095] After selecting the response frequency range of the diffusion region, determine the corresponding response frequency range of the diffusion region, and then determine the tangent value tanΦ of the phase difference corresponding to each predetermined perturbation frequency within this response frequency range of the diffusion region, such as {tanΦ1, tanΦ2... tanΦ m, where m can be a positive integer greater than 2. These determined tangent values are called tangent values to be operated on. That is to say, the tangent values of the phase differences selected through the diffusion region response frequency range are the tangent values for operation in the subsequent steps.

[0096] E: Operate on the tangent values to be operated on to obtain a first parameter.

[0097] After obtaining the tangent values to be operated on, operate on them. When the minority carrier diffusion layer is a finite layer, the phase difference satisfies the following formula (2):

[0098]

[0099] where sinhX represents the hyperbolic sine function of the first parameter X, and sinX represents the sine function of the first parameter X. Through the operation of the above formula (2), an operation curve is obtained, and the value of the first parameter X at each predetermined perturbation frequency can be obtained through the operation curve. Among them, the value of tanΦ is not zero.

[0100] After obtaining the first parameter X, obtain the thickness L of the minority carrier diffusion region according to the first parameter X.

[0101] In the embodiments of the present disclosure, obtain the angular frequency of the excitation voltage signal and the minority carrier diffusion coefficient, and obtain the thickness of the minority carrier diffusion region according to the angular frequency, the minority carrier diffusion coefficient, and the first parameter.

[0102] Among them, the angular frequency of the excitation voltage signal is represented by ω, ω = 2πf, where f is the predetermined perturbation frequency. The minority carrier diffusion coefficient is represented by D, which can be obtained through query. After obtaining the angular frequency ω, the minority carrier diffusion coefficient D, and the first parameter X, the thickness L of the minority carrier diffusion region can be obtained according to the following formula (3):

[0103]

[0104] In some embodiments, the first parameter X can be the value of the first parameter X corresponding to a lower predetermined perturbation frequency, and no special limitation is made here.

[0105] It can be seen from the above that the method for measuring the thickness of the minority carrier diffusion region in the embodiments of the present disclosure can obtain the thickness of the minority carrier diffusion region only by applying perturbation signals with different frequencies to the PN junction in the reverse bias state. The method is simple and has high accuracy.

[0106] The embodiments of the present disclosure also provide a device 800 for measuring the minority carrier concentration at the edge of a semiconductor device. Among them, the semiconductor device includes an N-type region, a P-type region, and a PN junction between the N-type region and the P-type region. The PN junction includes a depletion region A. The semiconductor device can be the semiconductor device in any of the above embodiments, which will not be elaborated here. As Figure 8As shown, the measurement device of the embodiments of the present disclosure includes: a receiving unit 801 and a processing unit 802.

[0107] The receiving unit 801 is configured to obtain an alternating current signal flowing through the PN junction when the PN junction is in a reverse-biased state, and the alternating current signal is obtained by applying an excitation voltage signal with a predetermined perturbation frequency to the N-type region.

[0108] The processing unit 802 is configured to obtain the diffusion impedance at the predetermined perturbation frequency from the excitation voltage signal and the alternating current signal.

[0109] The processing unit 802 is further configured to obtain the depletion region equivalent resistance R of the edge minority carriers at the junction of the depletion region A and the N-type region in a non-responsive state based on the diffusion impedance t and the diffusion region equivalent resistance R of the edge minority carriers in a diffusion response state d ; and obtain the edge minority carrier concentration based on the depletion region equivalent resistance R t and the diffusion region equivalent resistance R. d

[0110] In some embodiments, the processing unit 802 is further configured to split the diffusion impedance into a real part and an imaginary part; and obtain the depletion region equivalent resistance R t and the diffusion region equivalent resistance R d based on the real part and the imaginary part.

[0111] In some embodiments, the processing unit 802 is further configured to draw a Nyquist plot based on the real part and the imaginary part; determine that the first real part, the second real part, and the third real part when the imaginary part is zero are the first equivalent resistance R1, the second equivalent resistance R2, and the third equivalent resistance R3 respectively, where the first real part is less than the second real part, and the second real part is less than the third real part; obtain the depletion region equivalent resistance R t based on the first equivalent resistance R1 and the second equivalent resistance R2, and obtain the diffusion region equivalent resistance R d based on the second equivalent resistance R2 and the third equivalent resistance R3.

[0112] In some embodiments, the processing unit 802 is further configured to obtain a direct current, the diffusion region thickness of the edge minority carriers, and the diffusion coefficient of the edge minority carriers, where the direct current is the current flowing through the PN junction when no alternating voltage signal is applied to the N-type region; and obtain the edge minority carrier concentration based on the direct current, the diffusion region thickness, the diffusion coefficient, the depletion region equivalent resistance, and the diffusion region equivalent resistance.

[0113] In some embodiments, the processing unit 802 is further configured to obtain the diffusion coefficient of the edge minority carriers, the bulk minority carrier concentration, and the diffusion region thickness of the edge minority carriers; and obtain the reverse bias leakage current of the PN junction based on the diffusion coefficient, the bulk minority carrier concentration, the diffusion region thickness, and the edge minority carrier concentration.

[0114] In some embodiments, the predetermined perturbation frequency of the excitation voltage signal is from 100 kHz to 10 mHz. Here, kHz stands for kilohertz and mHz stands for millihertz. Specifically, in addition to the above two end values, the predetermined perturbation frequency can also be 90 kHz, 80 kHz, 60 kHz, 50 kHz, 30 kHz, 20 kHz, 9000 Hz, 5000 Hz, 2000 Hz, 1000 Hz, 800 Hz, 500 Hz, 900 mHz, 500 mHz, 200 mHz, 90 mHz, 50 mHz, 300 mHz, and no special limitation is made here.

[0115] In some embodiments, the voltage value of the excitation voltage signal is from 10 mV to 50 mV. Here, mV stands for millivolt. In addition to the above two end values, the voltage value of the excitation voltage signal can also be 20 mV, 25 mV, 30 mV, 35 mV, 40 mV, 45 mV, and no special limitation is made here. This voltage value ΔV is much smaller than the voltage VDD of the external electric field applied by the semiconductor device and is only used to form a perturbation to avoid affecting the electrical performance of the semiconductor device.

[0116] In summary, for the device for measuring the minority carrier concentration at the edge according to the embodiments of the present disclosure, only by obtaining the alternating current signal flowing through the PN junction when the PN junction is in the reverse bias state through the receiving unit 801 and using the processing unit 802 to perform calculation and processing on the alternating current signal and the externally applied excitation voltage signal, the minority carrier concentration at the edge can be obtained. The method is simple and has high accuracy.

[0117] The embodiments of the present disclosure also provide a computer device. As Figure 9 shown, the computer device in the embodiments of the present disclosure may include one or more processors 901, a memory 902, and an input / output interface 903. The processor 901 is respectively connected to the memory 902 and the input / output interface 903. As Figure 9 shown, the processor 901, the memory 902, and the input / output interface 903 are connected through a bus 904. The memory 902 is used to store a computer program, and the computer program includes program instructions. The input / output interface 903 is used to receive and output data, such as for data interaction between the host and the computer device, or for data interaction between virtual machines in the host; the processor 901 is used to execute the program instructions stored in the memory 902.

[0118] Among them, the processor 901 can perform the following operations: obtain an alternating current signal flowing through the PN junction when the PN junction is in the reverse bias state, where the alternating current signal is obtained by applying an excitation voltage signal with a predetermined perturbation frequency to the N-type region; obtain the diffusion impedance at the predetermined perturbation frequency according to the excitation voltage signal and the alternating current signal; obtain the depletion region equivalent resistance when the minority carriers at the edge of the junction between the depletion region and the N-type region are in the non-responsive state and the diffusion region equivalent resistance when the minority carriers at the edge are in the diffusion response state according to the diffusion impedance; and obtain the minority carrier concentration at the edge according to the depletion region equivalent resistance and the diffusion region equivalent resistance.

[0119] Alternatively, the processor 901 can perform the following operations: obtain an alternating current signal flowing through the PN junction when the PN junction is in the reverse bias state, where the alternating current signal is obtained by applying an excitation voltage signal with a predetermined perturbation frequency to the N-type region; obtain the diffusion impedance at the predetermined perturbation frequency according to the excitation voltage signal and the alternating current signal; obtain the depletion region equivalent resistance when the minority carriers at the edge of the junction between the depletion region and the N-type region are in the non-responsive state and the diffusion region equivalent resistance when the minority carriers at the edge are in the diffusion response state according to the diffusion impedance; obtain the minority carrier concentration at the edge according to the depletion region equivalent resistance and the diffusion region equivalent resistance; and obtain the reverse bias leakage current according to the minority carrier concentration at the edge.

[0120] In some feasible embodiments, the processor 901 can be a central processing unit (CPU), and the processor can also be other general-purpose processors, digital signal processors (DSPs), application specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. The general-purpose processor can be a microprocessor or the processor can also be any conventional processor, etc.

[0121] The memory 902 can include a read-only memory and a random access memory, and provide instructions and data to the processor 901 and the input / output interface 903. A part of the memory 902 can also include a non-volatile random access memory. For example, the memory 902 can also store information about the device type.

[0122] In specific implementation, the computer device can execute the implementation manners provided in each step of any of the above method embodiments through its built-in various functional modules. For the specific implementation manners provided in each step shown in the figures of the above method embodiments, reference can be made specifically, and details are not described herein again.

[0123] Embodiments of the present disclosure provide a computer device, including a processor 901, an input / output interface 903, and a memory 902. The processor 901 obtains a computer program in the memory 902 and executes each step of the method shown in any of the above embodiments.

[0124] Embodiments of the present disclosure further provide a computer-readable storage medium 1000. The computer-readable storage medium 1000 stores a computer program, which is adapted to be loaded and executed by the processor 901 to perform the method for measuring the edge minority carrier concentration or the method for measuring the reverse bias leakage current of a semiconductor device provided in each step of any of the above embodiments. For the specific implementation manner provided in each step of any of the above embodiments, reference can be made thereto, and details will not be repeated here.

[0125] In addition, the description of the beneficial effects of adopting the same method will not be repeated either. For the technical details not disclosed in the embodiments of the computer-readable storage medium 1000 involved in the present disclosure, please refer to the description of the method embodiments of the present disclosure. As an example, the computer program can be deployed to be executed on one computer device, or on multiple computer devices located at one location, or on multiple computer devices distributed at multiple locations and interconnected through a communication network.

[0126] The computer-readable storage medium 1000 can be an internal storage unit of the computer device provided in any of the foregoing embodiments, such as the hard disk or memory of the computer device. The computer-readable storage medium 1000 can also be an external storage device of the computer device, such as a plug-in hard disk, a smart media card (SMC), a secure digital (SD) card, a flash card, etc. equipped on the computer device. Further, the computer-readable storage medium 1000 can also include both the internal storage unit and the external storage device of the computer device. The computer-readable storage medium 1000 is used to store the computer program and other programs and data required by the computer device. The computer-readable storage medium 1000 can also be used to temporarily store the data that has been output or will be output.

[0127] Embodiments of the present disclosure further provide a computer program product or a computer program. The computer program product or the computer program includes computer instructions, and the computer instructions are stored in the computer-readable storage medium 1000. The processor of the computer device reads the computer instructions from the computer-readable storage medium 1000, and the processor executes the computer instructions, so that the computer device executes the method provided in various optional manners in any of the above embodiments.

[0128] It should be understood that the present disclosure is not limited in its application to the detailed construction and arrangement of components set forth in this specification. The present disclosure is capable of other embodiments and of being practiced and carried out in various ways. The foregoing variations and modifications fall within the scope of the present disclosure. It should be understood that the present disclosure as disclosed and defined in this specification extends to all alternative combinations of two or more separate features mentioned or evident in the text and / or drawings. All such different combinations constitute various alternative aspects of the present disclosure. The embodiments described in this specification illustrate the best mode known for practicing the present disclosure and will enable those skilled in the art to utilize the present disclosure.

Claims

1. A method for measuring the minority carrier concentration at the edge of a semiconductor device, the semiconductor device including an N-type region, a P-type region, and a PN junction between the N-type region and the P-type region, the PN junction including a depletion region, characterized in that, The method includes: Obtaining an alternating current signal flowing through the PN junction when the PN junction is in a reverse-biased state, where the alternating current signal is obtained by applying an excitation voltage signal with a predetermined perturbation frequency to the N-type region; Obtaining a diffusion impedance at the predetermined perturbation frequency based on the excitation voltage signal and the alternating current signal; Obtaining a depletion region equivalent resistance when the minority carriers at the junction of the depletion region and the N-type region are in a non-responsive state and a diffusion region equivalent resistance when the minority carriers are in a diffusion-responsive state based on the diffusion impedance; Obtaining the minority carrier concentration at the edge based on the depletion region equivalent resistance and the diffusion region equivalent resistance.

2. The method according to claim 1, characterized in that, Obtaining a depletion region equivalent resistance when the minority carriers at the junction of the depletion region and the N-type region are in a non-responsive state and a diffusion region equivalent resistance when the minority carriers are in a diffusion-responsive state based on the diffusion impedance, including: Splitting the diffusion impedance into a real part and an imaginary part; Obtaining the depletion region equivalent resistance and the diffusion region equivalent resistance based on the real part and the imaginary part.

3. The method according to claim 2, wherein Obtaining the depletion region equivalent resistance and the diffusion region equivalent resistance based on the real part and the imaginary part, including: Drawing a Nyquist plot based on the real part and the imaginary part; Determining that a first real part, a second real part, and a third real part when the imaginary part is zero are a first equivalent resistance, a second equivalent resistance, and a third equivalent resistance respectively, where the first real part is less than the second real part, and the second real part is less than the third real part; Obtaining the depletion region equivalent resistance based on the first equivalent resistance and the second equivalent resistance, and obtaining the diffusion region equivalent resistance based on the second equivalent resistance and the third equivalent resistance.

4. The method according to any one of claims 1 to 3, characterized in that, Obtaining the minority carrier concentration at the edge based on the depletion region equivalent resistance and the diffusion region equivalent resistance, including: Obtaining a direct current, the diffusion region thickness of the minority carriers, and the diffusion coefficient of the minority carriers, where the direct current is the current flowing through the PN junction when the alternating voltage signal is not applied to the N-type region; Obtaining the minority carrier concentration at the edge based on the direct current, the diffusion region thickness, the diffusion coefficient, the depletion region equivalent resistance, and the diffusion region equivalent resistance.

5. The method according to claim 1, wherein The minority carriers at the edge have a minority carrier diffusion characteristic frequency. When the predetermined perturbation frequency is greater than a first preset value compared to the minority carrier diffusion characteristic frequency, the minority carriers at the edge are in the non-responsive state; when the predetermined perturbation frequency is less than a second preset value compared to the minority carrier diffusion characteristic frequency, the minority carriers at the edge are in the diffusion-responsive state.

6. The method according to any one of claims 1 to 3, characterized in that Applying a first power supply voltage to the N-type region and a second power supply voltage to the P-type region to make the PN junction in the reverse-biased state, where the first power supply voltage is greater than the second power supply voltage.

7. The method according to claim 1, wherein The semiconductor device is an NMOS transistor, the P-type region is the P-type substrate of the NMOS transistor, and the N-type region is the N-type drain of the NMOS transistor; Wherein, a first power supply voltage is applied to the N-type drain, a second power supply voltage is applied to the P-type substrate, and the P-type substrate is short-circuited with the source and gate of the NMOS transistor to make the PN junction in the reverse bias state, and the first power supply voltage is greater than the second power supply voltage.

8. The method according to claim 1, wherein The predetermined perturbation frequency of the excitation voltage signal is 100 kHz to 10 mHz.

9. The method according to claim 1, wherein The voltage value of the excitation voltage signal is 10 mV to 50 mV.

10. A device for measuring the minority carrier concentration at the edge of a semiconductor device, the semiconductor device including an N-type region, a P-type region, and a PN junction between the N-type region and the P-type region, the PN junction including a depletion region, characterized in that, The device includes: A receiving unit, configured to obtain an alternating current signal flowing through the PN junction when the PN junction is in the reverse bias state, where the alternating current signal is obtained by applying an excitation voltage signal with a predetermined perturbation frequency to the N-type region; A processing unit, configured to obtain a diffusion impedance at the predetermined perturbation frequency based on the excitation voltage signal and the alternating current signal; The processing unit is further configured to obtain a depletion region equivalent resistance when the minority carriers at the junction of the depletion region and the N-type region are in a non-responsive state and a diffusion region equivalent resistance when the minority carriers are in a diffusion response state based on the diffusion impedance; The processing unit is further configured to obtain the minority carrier concentration at the edge based on the depletion region equivalent resistance and the diffusion region equivalent resistance.

11. The device according to claim 10, characterized in that, The processing unit is further configured to split the diffusion impedance into a real part and an imaginary part; and obtain the depletion region equivalent resistance and the diffusion region equivalent resistance based on the real part and the imaginary part.

12. A method for measuring the reverse bias leakage current of a semiconductor device, the semiconductor device including an N-type region, a P-type region, and a PN junction between the N-type region and the P-type region, the PN junction including a depletion region, characterized in that, The method includes: Obtaining an alternating current signal flowing through the PN junction when the PN junction is in the reverse bias state, where the alternating current signal is obtained by applying an excitation voltage signal with a predetermined perturbation frequency to the N-type region; Obtaining a diffusion impedance at the predetermined perturbation frequency based on the excitation voltage signal and the alternating current signal; Obtaining a depletion region equivalent resistance when the minority carriers at the junction of the depletion region and the N-type region are in a non-responsive state and a diffusion region equivalent resistance when the minority carriers are in a diffusion response state based on the diffusion impedance; Obtaining the minority carrier concentration at the edge based on the depletion region equivalent resistance and the diffusion region equivalent resistance; Obtaining reverse bias leakage current based on the minority carrier concentration at the edge.

13. The method according to claim 12, wherein It further includes: Obtaining the diffusion coefficient of the minority carriers at the edge, the bulk minority carrier concentration, and the thickness of the diffusion region of the minority carriers at the edge; Obtaining the reverse bias leakage current based on the diffusion coefficient, the bulk minority carrier concentration, the thickness of the diffusion region, and the minority carrier concentration at the edge.

14. A computer device, characterized in that, It includes a processor, a memory, and an input / output interface; The processor is respectively connected to the memory and the input / output interface. Wherein, the input / output interface is used to receive and output data, the memory is used to store a computer program, and the processor is used to call the computer program so that the computer device executes the method according to any one of claims 1 to 9; or, the method according to claim 12 or 13.

15. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores a computer program, and the computer program is suitable for being loaded and executed by a processor so that a computer device with the processor executes the method according to any one of claims 1 to 9; or, the method according to claim 12 or 13.

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