Organic film forming apparatus and method for manufacturing organic film

Abstract

This invention provides an organic film forming apparatus and a method for manufacturing an organic film that reduces the cost of cooling a workpiece with an organic film formed while maintaining the quality of the organic film. The organic film forming apparatus includes: a chamber; an exhaust section; a processing area for supporting the workpiece; a heating section disposed opposite to the workpiece; a cooling section for supplying cooling gas to the heating section; and a controller for controlling the heating section, the exhaust section, and the cooling section. The controller supplies a first cooling gas, which is less likely to react with the heated workpiece, to the heating section when the workpiece temperature is above a threshold temperature; and supplies a second cooling gas to the heating section when the workpiece temperature is below the threshold temperature. The first cooling gas is supplied to the chamber from the time the processed workpiece is removed from the chamber until the next workpiece to be processed is moved into the chamber and heated by at least one of the first and second heating sections.

Description

Technical Field

[0001] The embodiments of the present invention relate to an organic membrane forming apparatus and a method for manufacturing an organic membrane. Background Technology

[0002] Organic film forming apparatus, for example, includes a chamber capable of reducing the gas pressure to a lower than atmospheric pressure environment, and a heater disposed inside the chamber to heat the workpiece. This organic film forming apparatus forms an organic film by heating a substrate coated with a solution containing organic material and solvent in a gas environment reduced to a lower than atmospheric pressure environment, thereby causing the solvent contained in the solution to evaporate (for example, see Patent Document 1).

[0003] The substrate with the organic film formed is removed from the processed chamber or similar environment and transported to the next process. Since the organic film is formed through heating, the substrate temperature becomes high, making it difficult to remove or transport the hot substrate from the chamber. Furthermore, if removed at high temperatures, the organic film may oxidize and fail to perform its function. Therefore, cooling of the substrate is necessary.

[0004] In this case, a method of cooling the substrate by supplying cooling gas into the chamber and blowing the cooling gas onto the substrate can be considered. However, the formation of the organic film requires processing at extremely high temperatures of approximately 250°C to 600°C. Therefore, the amount of cooling gas consumed before the substrate reaches a transportable temperature becomes enormous. Furthermore, organic films at temperatures of approximately 250°C to 600°C are highly reactive. Therefore, if the cooling gas contains oxygen, the organic film will oxidize. To prevent oxidation of the organic film, using an inert gas as the cooling gas throughout the cooling process would also increase costs.

[0005] Therefore, it is desirable to develop a technology that can reduce the cost of cooling workpieces with organic films while maintaining the quality of the organic films.

[0006] [Existing technical documents]

[0007] [Patent Literature]

[0008] [Patent Document 1] Japanese Patent Application Publication No. 2019-184229 Summary of the Invention

[0009] [The problem the invention aims to solve]

[0010] The purpose of this invention is to provide an organic film forming apparatus and a method for manufacturing an organic film that can reduce the cost of cooling a workpiece with an organic film formed while maintaining the quality of the organic film.

[0011] [Technical means to solve the problem]

[0012] An organic film forming apparatus according to an embodiment includes: a chamber capable of maintaining a gas environment depressurized to below atmospheric pressure; an exhaust section capable of venting the interior of the chamber; a processing area for supporting a workpiece having a substrate and a solution containing an organic material and a solvent coated on the upper surface of the substrate; a heating section disposed opposite to the workpiece supported in the processing area; a cooling section for supplying cooling gas to the heating section; and a controller for controlling the heating section, the exhaust section, and the cooling section. The cooling section includes: a first gas supply path for supplying a first cooling gas that is unlikely to react with the heated workpiece to the interior of the heating section; a second gas supply path for supplying a second cooling gas to the interior of the heating section; a common section shared by the first supply path and the second supply path; and a first valve for selectively supplying the first cooling gas supplied by the first supply path and the second cooling gas supplied by the second supply path to the common section. The controller supplies a first cooling gas to the heating section when the workpiece is at a temperature higher than a threshold, and supplies a second cooling gas to the heating section when the workpiece is at a temperature lower than the threshold. The first cooling gas is supplied to the chamber from the time the processed workpiece is removed from the chamber until the next workpiece to be processed is moved into the chamber and the next workpiece to be processed is heated by at least one of the first heating section and the second heating section.

[0013] The method for manufacturing an organic film according to the embodiment includes: a workpiece loading step, in which a workpiece is loaded into a chamber capable of maintaining a gas environment depressurized to below atmospheric pressure, the workpiece having a substrate and a solution containing an organic material and a solvent coated on the upper surface of the substrate; a step of heating the workpiece in a gas environment depressurized to below atmospheric pressure; a step of cooling the workpiece having formed an organic film by the heating; and a step of removing the workpiece having formed the organic film. In the step of heating the workpiece, the workpiece is heated by a heating section disposed opposite to the workpiece in a processing area. In the step of cooling the workpiece, if the workpiece is at a temperature higher than a threshold, a first gas that is not easily reactive with the heated workpiece is supplied to the interior of the heating section. If the workpiece is at a temperature lower than the threshold, a second cooling gas is supplied to the interior of the heating section. The first cooling gas is supplied to the chamber from the step of removing the workpiece to the step of loading the workpiece.

[0014] [The effects of the invention]

[0015] According to embodiments of the present invention, an organic film forming apparatus and a method for manufacturing an organic film are provided, which can reduce the cost of cooling a workpiece to which an organic film has been formed and maintain the quality of the organic film. Attached Figure Description

[0016] Figure 1 This is a schematic perspective view illustrating the organic film forming apparatus of this embodiment.

[0017] Figure 2 It is a chart used to illustrate the processing steps of a workpiece and the timing of the supply of cooling gas.

[0018] Figure 3 This is a schematic cross-sectional view used to illustrate the organic film forming apparatus of this embodiment.

[0019] Figure 4 This is a schematic perspective view illustrating an organic film forming apparatus according to another embodiment.

[0020] Figure 5 This is a schematic perspective view illustrating an organic film forming apparatus according to another embodiment.

[0021] Figure 6 This is a schematic cross-sectional view illustrating an organic film forming apparatus according to another embodiment.

[0022] [Explanation of reference numerals in the attached figures]

[0023] 1, 1a, 1b: Organic film forming apparatus

[0024] 10: Chamber

[0025] 10a: Ontology

[0026] 11, 14: Flange

[0027] 11a: Opening

[0028] 12: Sealing material

[0029] 13: Opening and closing doors (doors, front doors)

[0030] 15: Cover

[0031] 16, 40, 140: Cooling section

[0032] 17, 18: Exhaust port

[0033] 20: Exhaust section

[0034] 21: First exhaust section

[0035] 21a, 22a: Exhaust pumps

[0036] 21b, 22b: Pressure control section

[0037] 22: Second exhaust section

[0038] 23: Third exhaust section

[0039] 24: Cold Trap

[0040] 25: Valve

[0041] 30: Processing Department

[0042] 30a, 30b: Processing areas

[0043] 31: Framework

[0044] 32: Heating section

[0045] 32a: Heater

[0046] 32b: Holder

[0047] 33: Support section

[0048] 34: Heat Spreader

[0049] 34a: Upper heat spreader

[0050] 34b: Lower heat spreader

[0051] 34c, 34d: Side heat spreader

[0052] 35: Heat spreader support section

[0053] 36: Cover

[0054] 40a: First gas supply path

[0055] 40b: Second gas supply path

[0056] 41, 141: Nozzle

[0057] 42, 52: Gas source

[0058] 43, 53: Gas Control Department

[0059] 54: Switching valve

[0060] 54a and 54b valves

[0061] 60: Controller

[0062] 100: Workpiece

[0063] G: Cooling gas

[0064] X, Y, Z: Direction Detailed Implementation

[0065] Hereinafter, embodiments will be illustrated with reference to the accompanying drawings. Furthermore, in each drawing, the same reference numerals are used to denote the same constituent elements, and detailed descriptions are appropriately omitted.

[0066] Figure 1 This is a schematic perspective view illustrating the organic film forming apparatus of this embodiment.

[0067] Figure 3 This is a schematic cross-sectional view used to illustrate the organic film forming apparatus of this embodiment.

[0068] also, Figure 1 The X, Y, and Z directions represent three mutually orthogonal directions. The up / down direction in this specification can be set as the Z direction. Additionally, to avoid complexity, Figure 3 The components located inside chamber 10 are omitted from the description.

[0069] The workpiece 100 before the formation of the organic film has a substrate and a solution coated on the upper surface of the substrate.

[0070] The substrate may be, for example, a glass substrate or a semiconductor wafer. However, the substrate is not limited to the examples.

[0071] The solution may contain, for example, an organic material and a solvent. There is no particular limitation on the organic material, as long as it can be dissolved by the solvent. The solution may, for example, be a varnish containing polyamic acid. However, the solution is not limited to this example. Additionally, it may include a semi-hardened state (a non-flowing state) where the liquid has been temporarily heated.

[0072] like Figure 1 As shown, the organic film forming apparatus 1 includes, for example, a chamber 10, an exhaust section 20, a processing section 30, a cooling section 40, and a controller 60.

[0073] The controller 60 includes, for example, an arithmetic unit such as a central processing unit (CPU) and a storage unit such as a memory. The controller 60 may be, for example, a computer. Based on the control program stored in the storage unit, the controller 60 controls the operation of each component installed in the organic film forming apparatus 1.

[0074] For example, the controller 60 controls the exhaust section 20 and the heater 32a provided in the organic film forming apparatus 1. The controller 60 controls the exhaust section 20 to apply power to the heater 32a after the internal pressure of the chamber 10 reaches a predetermined value. For example, the controller 60 can control the exhaust section 20 to apply power to the heater 32a after the internal pressure of the chamber 10 reaches a pressure where the oxygen concentration in the chamber is at or below a predetermined concentration of 100 ppm.

[0075] The chamber 10 has an airtight structure capable of maintaining a gas environment depressurized to below atmospheric pressure. The chamber 10 is box-shaped. The external shape of the chamber 10 is not particularly limited. For example, the external shape of the chamber 10 can be a cuboid. The chamber 10 can be made of a metal such as stainless steel. Furthermore, an oxygen concentration meter 21c for detecting oxygen concentration is installed in the chamber 10.

[0076] The chamber 10 has a body 10a, a door 13 and a cover 15.

[0077] In the Y direction, a flange 11 may be provided at one end of the body 10a. A sealing material 12, such as an O-ring, may be provided on the flange 11. The opening 11a of the chamber 10 on the side with the flange 11 can be opened and closed via a door 13. By means of a drive device (not shown), the door 13 is pushed against the flange 11 (sealing material 12), thereby sealing the opening 11a of the chamber 10 in an airtight manner. By means of a drive device (not shown), the door 13 is moved away from the flange 11, thereby opening the opening 11a of the chamber 10, allowing the workpiece 100 to be moved in or out through the opening 11a.

[0078] In the Y direction, a flange 14 may be provided at the other end of the body 10a. An O-ring or other sealing material 12 may be provided on the flange 14. The opening on the side of the chamber 10 where the flange 14 is located can be opened and closed via a cover 15. For example, the cover 15 may be detachably attached to the flange 14 using a fastening member such as a screw. During maintenance, the opening on the side of the chamber 10 where the flange 14 is located is exposed by removing the cover 15.

[0079] Cooling sections 16 may be provided on the outer wall of chamber 10 and the outer surface of door 13. Cooling sections 16 are connected to a cooling water supply section (not shown). Cooling sections 16 may be, for example, water jackets. If cooling sections 16 are provided, the temperature of the outer wall of chamber 10 or the outer surface of door 13 can be prevented from exceeding a predetermined temperature.

[0080] The exhaust section 20 exhausts air from the interior of the chamber 10. The exhaust section 20 may include, for example, a first exhaust section 21, a second exhaust section 22, and a third exhaust section 23.

[0081] The first exhaust section 21 is connected, for example, to an exhaust port 17, which is located on the bottom surface of the chamber 10.

[0082] The first exhaust section 21 includes, for example, an exhaust pump 21a and a pressure control section 21b.

[0083] The exhaust pump 21a can be configured to perform rough evacuation from atmospheric pressure to a specified pressure. Therefore, the exhaust pump 21a has a larger exhaust volume than the exhaust pump 22a described later. The exhaust pump 21a can be, for example, a dry vacuum pump.

[0084] The pressure control unit 21b is, for example, located between the exhaust port 17 and the exhaust pump 21a. The pressure control unit 21b controls the internal pressure of the chamber 10 to a predetermined pressure based on the output of a vacuum gauge (not shown) or similar device that detects the internal pressure of the chamber 10. The pressure control unit 21b may be, for example, an automatic pressure controller (APC).

[0085] Furthermore, a cold trap 24 for capturing the discharged sublimates is provided between the exhaust port 17 and the pressure control unit 21b. Additionally, a valve 25 is provided between the exhaust port 17 and the cold trap 24. The valve 25 is used to separate the first exhaust unit 21 from the chamber 10 during the cooling process described later.

[0086] The second exhaust section 22 is connected, for example, to an exhaust port 18, which is located on the bottom surface of the chamber 10. Furthermore, two exhaust ports 18 are provided in this embodiment, but one or more may also be provided.

[0087] The second exhaust section 22 includes, for example, an exhaust pump 22a and a pressure control section 22b.

[0088] After rough venting using exhaust pump 21a, exhaust pump 22a vents to a lower specified pressure. Exhaust pump 22a, for example, has the venting capability to vent up to the molecular flow region of high vacuum. For example, exhaust pump 22a can be configured as a turbomolecular pump (TMP).

[0089] A pressure control unit 22b is provided, for example, between the exhaust port 18 and the exhaust pump 22a. The pressure control unit 22b controls the internal pressure of the chamber 10 to a predetermined pressure based on the output of a vacuum gauge (not shown) or similar device that detects the internal pressure of the chamber 10. The pressure control unit 22b can be, for example, an APC (Automatic Pressure Controller). Furthermore, similar to the first exhaust unit 21, a cold trap 24 and a valve 25 can be provided between the exhaust port 18 and the pressure control unit 21b.

[0090] The third exhaust section 23 is connected between the exhaust port 18 and the valve 25 of the second exhaust section 22. The third exhaust section 23 is connected to the factory's exhaust system. The third exhaust section 23 can be, for example, made of stainless steel piping. The valve 25 is provided between the exhaust port 18 and the factory's exhaust system in the third exhaust section.

[0091] The processing unit 30 includes, for example, a frame 31, a heating unit 32, a support unit 33, a heat spreader 34, a heat spreader plate support unit 35, and a cover 36.

[0092] Inside the processing unit 30, processing areas 30a and 30b are provided. Processing areas 30a and 30b form the space for processing the workpiece 100. The workpiece 100 is supported inside processing areas 30a and 30b. Processing area 30b is located above processing area 30a. Furthermore, the case of providing two processing areas is illustrated, but it is not a limitation. Only one processing area may be provided, or three or more processing areas may be provided. In this embodiment, the case of providing two processing areas is illustrated as an example, but the same considerations can be made for providing one processing area or three or more processing areas.

[0093] Processing areas 30a and 30b are disposed between heating sections 32. Processing areas 30a and 30b are surrounded by heat spreaders 34 (upper heat spreader 34a, lower heat spreader 34b, side heat spreader 34c, and side heat spreader 34d).

[0094] As will be described later, the heat spreader 34 includes multiple heat spreaders. Therefore, the heat spreader 34 is not a sealed structure. Therefore, if the pressure in the space between the inner wall of the chamber 10 and the processing section 30 is reduced, the pressure in the space inside the processing area 30a and the processing area 30b is also reduced.

[0095] By reducing the pressure in the space between the inner wall of chamber 10 and the processing section 30, heat release from processing areas 30a and 30b to the outside can be suppressed. That is, heating efficiency or heat storage efficiency can be improved. Therefore, the power applied to the heater 32a (described later) can be reduced. Furthermore, if the power applied to the heater 32a can be reduced, the temperature of the heater 32a can be prevented from exceeding a predetermined temperature, thus extending the lifespan of the heater 32a.

[0096] The frame 31 has a skeleton structure including slender plates or steel sections. The external shape of the frame 31 can be set to be the same as the external shape of the chamber 10. For example, the external shape of the frame 31 can be set to be a cuboid.

[0097] Multiple heating units 32 are provided. Heating units 32 can be provided at the lower part of processing regions 30a and 30b, and at the upper part of processing regions 30a and 30b. Heating units 32 provided at the lower part of processing regions 30a and 30b are called lower heating units (an example of a second heating unit). Heating units 32 provided at the upper part of processing regions 30a and 30b are called upper heating units (an example of a first heating unit). The lower heating units and upper heating units face each other. Furthermore, when multiple processing regions are arranged overlapping vertically, the upper heating unit provided in the lower processing region can also serve as the lower heating unit provided in the upper processing region.

[0098] The heating element 32 is disposed inside the chamber 10 to heat the workpiece 100.

[0099] For example, the lower surface (back side) of the supported workpiece 100 in processing area 30a is heated by a heating unit 32 located at the lower part of processing area 30a. The upper surface (surface) of the supported workpiece 100 in processing area 30a is heated by a heating unit 32 that is used in both processing area 30a and processing area 30b.

[0100] The lower surface (back side) of the supported workpiece 100 in processing area 30b is heated by a heating unit 32 that is shared by processing areas 30a and 30b. The upper surface (surface) of the supported workpiece 100 in processing area 30b is heated by a heating unit 32 located at the upper part of processing area 30b.

[0101] Each of the multiple heating sections 32 has at least one heater 32a and a pair of holders 32b. Furthermore, the case where multiple heaters 32a are provided will be described below.

[0102] The heater 32a is rod-shaped and extends along the Y direction between a pair of retainers 32b. Multiple heaters 32a can be arranged along the X direction. For example, multiple heaters 32a can be arranged at equal intervals. The heaters 32a can be, for example, sheathed heaters, far-infrared heaters, far-infrared lamps, ceramic heaters, cartridge heaters, etc. Alternatively, various heaters can be covered by quartz covers.

[0103] Furthermore, this specification also includes various heaters covered by a quartz cap, referred to as "rod-shaped heaters". Additionally, the cross-sectional shape of "rod-shaped" is not limited, and may include, for example, cylindrical or prismatic shapes.

[0104] Furthermore, heater 32a is not limited to the example. For example, heater 32a may utilize heat energy obtained from radiation.

[0105] The specifications, number, and spacing of the multiple heaters 32a in the upper and lower heating sections can be appropriately determined based on the composition of the solution to be heated (the heating temperature of the solution), the size of the workpiece 100, etc. The specifications, number, and spacing of the multiple heaters 32a can be appropriately determined through simulation or experimentation.

[0106] Furthermore, the space where multiple heaters 32a are installed is surrounded by a holder 32b, an upper heat spreader 34a, a lower heat spreader 34b, a side heat spreader 34c, and a side heat spreader 34d. Therefore, by supplying cooling gas from the cooling section 40 to the space where multiple heaters 32a are installed, the multiple heaters 32a, the upper heat spreader 34a, the lower heat spreader 34b, the side heat spreader 34c, and the side heat spreader 34d can be cooled. In addition, gaps are provided between the upper heat spreaders 34a and between the lower heat spreaders 34b. Therefore, a portion of the cooling gas supplied from the cooling section 40 to the space where multiple heaters 32a are installed flows into the processing zone 30a or the processing zone 30b.

[0107] A pair of retainers 32b extend along the X direction (e.g., the direction of the long side of processing area 30a and processing area 30b). The pair of retainers 32b face each other in the Y direction. One retainer 32b is fixed to the end face of the frame 31 on the door 13 side. The other retainer 32b is fixed to the end face of the frame 31 on the side opposite to the door 13 side. The pair of retainers 32b can be fixed to the frame 31, for example, using fastening members such as screws. The pair of retainers 32b holds the non-heat-dissipating portion near the end of the heater 32a. The pair of retainers 32b can be formed, for example, from slender metal sheets or structural steel. The material of the pair of retainers 32b is not particularly limited, but it is preferably made of a material with heat resistance and corrosion resistance. The material of the pair of retainers 32b can be, for example, stainless steel.

[0108] A support portion 33 is disposed inside the chamber 10 to support the workpiece 100. For example, the support portion 33 supports the workpiece 100 between the upper heating portion and the lower heating portion. Multiple support portions 33 may be provided. Multiple support portions 33 are disposed at the lower part of the processing area 30a and the lower part of the processing area 30b. Multiple support portions 33 may be rod-shaped.

[0109] One end (the upper end) of the plurality of support portions 33 contacts the lower surface (back side) of the workpiece 100. Therefore, the shape of one end of the plurality of support portions 33 is preferably hemispherical or the like.

[0110] The workpiece 100 is heated by radiation-generated heat energy in a gas environment where the pressure is reduced to below atmospheric pressure. Therefore, the distance from the upper heating part to the upper surface of the workpiece 100 and the distance from the lower heating part to the lower surface of the workpiece 100 are the distances from which the radiation-generated heat energy can reach the workpiece 100.

[0111] The other end (lower end) of the plurality of support portions 33 may be fixed, for example, to a plurality of rod-shaped or plate-shaped members mounted between a pair of frames 31.

[0112] The number, configuration, and spacing of the multiple support parts 33 can be appropriately changed according to the size or rigidity (flexibility) of the workpiece 100.

[0113] The material of the plurality of support portions 33 is not particularly limited, but it is preferably made of a material that is heat-resistant and corrosion-resistant. For example, the material of the plurality of support portions 33 can be stainless steel.

[0114] The heat spreader 34 includes: multiple upper heat spreaders 34a (an example of a first heat spreader), multiple lower heat spreaders 34b (an example of a second heat spreader), multiple side heat spreaders 34c, and multiple side heat spreaders 34d. The multiple upper heat spreaders 34a, multiple lower heat spreaders 34b, multiple side heat spreaders 34c, and multiple side heat spreaders 34d are plate-shaped.

[0115] Multiple upper heat spreaders 34a are disposed in the upper heating section on the side of the lower heating section (workpiece 100 side). The multiple upper heat spreaders 34a are disposed away from the multiple heaters 32a. The multiple upper heat spreaders 34a are arranged along the X direction. Gaps are provided between the multiple upper heat spreaders 34a. As described above, the pressure in the spaces of the processing areas 30a and 30b can be reduced through these gaps.

[0116] Multiple lower heat spreaders 34b are disposed in the lower heating section on the side of the upper heating section (workpiece 100 side). The multiple lower heat spreaders 34b are disposed away from the multiple heaters 32a. The multiple lower heat spreaders 34b are arranged along the X direction. Gaps are provided between the multiple lower heat spreaders 34b. As described above, the pressure in the spaces of the processing areas 30a and 30b can be reduced through these gaps.

[0117] Side heat spreaders 34c are respectively disposed on the sides of processing areas 30a and 30b in the X direction. The side heat spreaders 34c can be disposed inside the cover 36. Furthermore, as mentioned above, a gap is provided between the side heat spreaders 34c and the upper heat spreader 34a or the lower heat spreader 34b. Pressure in the space of processing areas 30a and 30b can be reduced through these gaps.

[0118] Side heat spreaders 34d are respectively disposed on the sides of processing areas 30a and 30b in the Y direction. The side heat spreader 34d disposed on the door 13 side can be disposed on the door 13 with a gap from the cover 36. The side heat spreader 34d disposed on the cover 15 side can be disposed on the inner side of the cover 36. Furthermore, as mentioned above, a gap is provided between the side heat spreader 34d and the upper heat spreader 34a or the lower heat spreader 34b. Pressure in the space of processing areas 30a and 30b can be reduced through these gaps.

[0119] In this embodiment, the gaps between the upper heat spreaders 34a and between the lower heat spreaders 34b are formed to be larger than the gaps between the upper heat spreaders 34a (lower heat spreaders 34b) and the side heat spreaders 34c, and between the upper heat spreaders 34a (lower heat spreaders 34b) and the side heat spreaders 34d. The reason for this will be explained later.

[0120] As described above, multiple heaters 32a are rod-shaped and arranged at predetermined intervals. If the workpiece 100 is heated directly using multiple rod-shaped heaters 32a, the in-plane temperature distribution of the heated workpiece 100 will deviate.

[0121] If the in-plane temperature distribution of the workpiece 100 deviates, the quality of the formed organic film may decrease. For example, bubbles may form in areas with higher temperatures, or the composition of the organic film may change in areas with higher temperatures.

[0122] In the organic film forming apparatus 1 of this embodiment, a plurality of upper heat spreaders 34a and a plurality of lower heat spreaders 34b, as described above, are provided. Therefore, heat emitted from the plurality of heaters 32a is incident on the plurality of upper heat spreaders 34a and the plurality of lower heat spreaders 34b, and propagates along the surface direction within these heat spreaders while being emitted towards the workpiece 100. As a result, deviations in the in-plane temperature distribution of the workpiece 100 can be suppressed, thereby improving the quality of the formed organic film.

[0123] Multiple upper heat spreaders 34a and multiple lower heat spreaders 34b allow the incident heat to propagate along the surface direction; therefore, the material of these heat spreaders is preferably a material with high thermal conductivity. For example, the multiple upper heat spreaders 34a and multiple lower heat spreaders 34b can be made of aluminum, copper, stainless steel, etc. Furthermore, when using easily oxidized materials such as aluminum or copper, it is preferable to provide a layer containing a material that is not easily oxidized on the surface.

[0124] A portion of the heat emitted from the multiple upper heat spreaders 34a and multiple lower heat spreaders 34b is directed toward the side of the processing area. Therefore, side heat spreaders 34c and 34d, as described above, are provided on the side of the processing area. Heat incident on the side heat spreaders 34c and 34d propagates along the surface direction on the side heat spreaders 34c and 34d, while a portion of it is radiated toward the workpiece 100. Therefore, the heating efficiency of the workpiece 100 can be improved.

[0125] The materials of the side heat spreaders 34c and 34d can be the same as those of the upper heat spreader 34a and lower heat spreader 34b described above.

[0126] Furthermore, the above example illustrates a case where multiple upper heat spreaders 34a and multiple lower heat spreaders 34b are arranged along the X direction, but at least one of the upper heat spreaders 34a and the lower heat spreaders 34b may also be a single plate-shaped member.

[0127] Multiple heat spreader support portions 35 are arranged along the X direction. The heat spreader support portions 35 can be located directly below each other between the upper heat spreaders 34a. The multiple heat spreader support portions 35 can be fixed to a pair of retainers 32b using fasteners such as screws. Adjacent heat spreader support portions 35 detachably support both ends of the upper heat spreader 34a. Furthermore, the multiple heat spreader support portions 35 supporting multiple lower heat spreaders 34b can also have the same structure.

[0128] The cover 36 is plate-shaped and covers the upper surface, bottom surface, and sides of the frame 31. That is, the cover 36 covers the interior of the frame 31. However, the cover 36 on the side of the door 13 can be provided on the door 13, for example.

[0129] The cover 36 surrounds the processing areas 30a and 30b, but gaps are provided at the boundary line between the upper surface and the side of the frame 31, the boundary line between the side and the bottom of the frame 31, and near the door 13.

[0130] Furthermore, the covers 36 disposed on the upper and lower surfaces of the frame 31 are divided into multiple sections. Gaps are provided between the divided covers 36. That is, the internal space of the processing section 30 (processing area 30a, processing area 30b) communicates with the internal space of the chamber 10 through these gaps. Therefore, the pressure in the processing areas 30a and 30b can be made the same as the pressure in the space between the inner wall of the chamber 10 and the covers 36. The covers 36 can be made of, for example, stainless steel.

[0131] The cooling section 40 supplies cooling gas to the area where the heating section 32 is provided. For example, the cooling section 40 uses cooling gas G to cool the heat spreader 34 surrounding the processing areas 30a and 30b, and indirectly cools the workpiece 100 at a high temperature using the cooled heat spreader 34. Alternatively, the cooling section 40 may also supply cooling gas to the workpiece 100 directly from the gap between the upper heat spreaders 34a or the gap between the lower heat spreaders 34b.

[0132] That is, the cooling unit 40 can cool the workpiece 100 both indirectly and directly.

[0133] The cooling section 40 has, for example, a first gas supply path 40a and a second gas supply path 40b.

[0134] First, the first gas supply path 40a will be described. The first gas supply path 40a supplies cooling gas G1 to the area where the heating unit 32 is installed during the cooling process described later. The first gas supply path 40a includes: a nozzle 41, a gas source 42, a gas control unit 43, and a switching valve 54.

[0135] like Figure 1 As shown, the nozzle 41 can be connected to a space where multiple heaters 32a are provided. The nozzle 41, for example, can pass through the shroud 36, and thus can be mounted on a side heat spreader 34c or a frame 31, etc. Multiple nozzles 41 can be provided in the Y direction (see reference). Figure 3 Furthermore, the number or arrangement of the nozzles 41 can be appropriately changed. For example, in the X direction, nozzles 41 may be provided on one side of the processing unit 30, or nozzles 41 may be provided on both sides of the processing unit 30. For example, multiple nozzles 41 may also be arranged in the Y direction.

[0136] Gas source 42 supplies cooling gas G1, equivalent to the first cooling gas, to nozzle 41. Gas source 42 can be, for example, a high-pressure gas cylinder, a factory piping, etc. Alternatively, multiple gas sources 42 can be provided.

[0137] The cooling gas G1 is preferably a gas that does not readily react with the heated workpiece 100. For example, the cooling gas G1 can be nitrogen, a rare gas, etc. Rare gases include, for example, argon or helium. Using nitrogen as the cooling gas G1 can reduce operating costs. Because helium has high thermal conductivity, using helium as the cooling gas G1 can shorten the cooling time.

[0138] The temperature of the cooling gas G1 can be set to below room temperature (e.g., 25°C).

[0139] A gas control unit 43 is disposed between the nozzle 41 and the gas source 42. The gas control unit 43 can, for example, control the supply and stop of cooling gas, or control at least one of the flow rate and flow volume of cooling gas.

[0140] Furthermore, the timing of supplying cooling gas G1 can be set after the heat treatment of workpiece 100 is completed. Moreover, the completion of the heat treatment can be defined as after maintaining the temperature at which the organic film is formed for a specified time.

[0141] The switching valve 54 is a valve (equivalent to an example of the first valve) used to connect the first gas supply path 40a and the second gas supply path 40b, and capable of selectively supplying either cooling gas G1 or cooling gas G2 to the area where the heating unit 32 is provided. The switching valve 54 is disposed between the nozzle 41 and the gas control unit 43, and is outside the chamber 10.

[0142] Next, the second gas supply path 40b will be described. The second gas supply path 40b is provided to supply a cooling gas G2, which is different from the cooling gas G1, to the area where the heating unit 32 is provided during the cooling process. As a result, the workpiece 100, which has been cooled to a threshold temperature by the supply of cooling gas G1, is cooled instead of the cooling gas G1.

[0143] The second gas supply path 40b includes, for example, a nozzle 41, a gas source 52, a gas control unit 53, and a switching valve 54. In this case, the second gas supply path 40b is connected to the first gas supply path 40a via the switching valve 54.

[0144] Gas source 52 supplies cooling gas G2, equivalent to the second cooling gas, to multiple nozzles 41. Gas source 52 can be, for example, a high-pressure gas cylinder, a plant piping, etc. Alternatively, multiple gas sources 52 can be provided.

[0145] The cooling gas G2 can be, for example, clean dry air (CDA). Using clean dry air as the cooling gas can reduce operating costs. Alternatively, for example, outside air can be introduced into the cleanroom from the factory piping via a filter.

[0146] The temperature of the cooling gas G2 can be set to room temperature (e.g., 25°C).

[0147] A gas control unit 53 is disposed between the switching valve 54 and the gas source 52. The gas control unit 53 can, for example, control the supply and cessation of the cooling gas G2. Additionally, the gas control unit 53 can, for example, control at least one of the flow rate and flow rate of the cooling gas G2. The flow rate or flow rate of the cooling gas G2 can be appropriately varied according to the size of the chamber 10 or the shape, number, and arrangement of the nozzles 41. The flow rate or flow rate of the cooling gas G2 can be appropriately determined, for example, through experiments or simulations.

[0148] The piping connecting the switching valve 54 and the nozzle 41 is a portion shared by the first gas supply path 40a and the second gas supply path 40b. Hereinafter, the piping will be referred to as the common part.

[0149] Next, the operation of the organic film forming apparatus 1 will be illustrated.

[0150] Figure 2 This is a diagram used to illustrate the processing steps of workpiece 100.

[0151] like Figure 2 As shown, the organic film formation process includes: workpiece loading process, heating process, heat treatment process, cooling process, and workpiece unloading process.

[0152] First, in the workpiece loading process, the door 13 is opened and closed away from the flange 11, and the workpiece 100 is loaded into the internal space of the chamber 10. Simultaneously with the workpiece loading process, cooling gas G1 is supplied to the internal space of the chamber 10 from the first gas supply path 40a. After the workpiece 100 is loaded into the internal space of the chamber 10, the pressure inside the chamber 10 is reduced to a specified pressure by the exhaust unit 20.

[0153] After the internal pressure of chamber 10 is reduced to a specified pressure, power is applied to heater 32a via controller 60. Thus, as... Figure 2 As shown, the temperature of workpiece 100 rises. The process of raising the temperature of workpiece 100 is called the heating process. In this embodiment, the heating process is performed twice (heating process (1) and heating process (2)). Furthermore, the specified pressure is only required to prevent the polyamic acid in the solution from reacting with the oxygen remaining in the internal space of chamber 10 and being oxidized. For example, the specified pressure can be set to 1×10⁻⁶. -2 Pa to 100 Pa is sufficient. That is, it is not necessary to use the second exhaust section 22 for exhaust. After exhausting with the first exhaust section 21, the heating section 32 can start heating the workpiece 100 when the internal space of the chamber 10 reaches a pressure in the range of 10 Pa to 100 Pa.

[0154] After the heating process, a heat treatment process is performed. The heat treatment process is a process of maintaining a specified temperature for a specified time. In this embodiment, a heat treatment process (1) and a heat treatment process (2) may be provided.

[0155] The heat treatment process (1) can be set as follows: heating the workpiece 100 at a first temperature for a specified time to remove moisture or gas contained in the solution. The first temperature can be set to 100℃~200℃ for example.

[0156] By implementing the heat treatment step (1), moisture or gas contained in the solution can be prevented from being contained in the organic membrane as the finished product. Furthermore, depending on the composition of the solution, the first heat treatment step can be performed multiple times at different temperatures, or the first heat treatment step can be omitted.

[0157] The heat treatment step (2) is as follows: the substrate (workpiece 100) coated with the solution is maintained at a specified pressure and temperature (second temperature) for a specified time to form an organic film. The second temperature only needs to be set to the temperature that causes imidization, for example, it only needs to be set to 300°C or higher. In this embodiment, in order to obtain an organic film with high molecular chain filling, the heat treatment step is performed at 400°C to 600°C.

[0158] The cooling process is a process that lowers the temperature of the workpiece 100, to which the organic film has been formed. In this embodiment, it is performed after the heat treatment process (2). In the cooling process, when the temperature of the workpiece 100 is higher than a threshold temperature, cooling gas G1 is supplied from the first gas supply path 40a, and when the temperature of the workpiece 100 falls below the threshold temperature, cooling gas G2 is supplied from the second gas supply path 40b. Furthermore, the temperature (threshold) at which the cooling gas G1 is switched to the cooling gas G2 varies depending on the material, and is therefore appropriately set. The threshold temperature is, for example, a temperature in the range of 150°C to 250°C. The workpiece 100 is cooled to a temperature at which it can be removed. For example, if the temperature of the workpiece 100 to be removed is room temperature, the removal of the workpiece 100 is easy. However, if the temperature of the workpiece 100 is set to room temperature each time it is removed, the time required to heat up the next workpiece 100 will be longer. That is, there is a risk of decreased productivity. The temperature of the workpiece 100 to be removed can be set to, for example, 50°C to 120°C. This removal temperature is set as the third temperature.

[0159] The controller 60 closes the valve 25 of the first exhaust section 21. Then, the cooling section 40 is controlled to supply cooling gas G1 or cooling gas G2 to the space where multiple heaters 32a are provided, thereby indirectly and directly reducing the temperature of the workpiece 100.

[0160] Therefore, the gaps between the upper heat spreaders 34a and between the lower heat spreaders 34b are larger than the gaps between the upper heat spreaders 34a (lower heat spreaders 34b) and the side heat spreaders 34c, and between the upper heat spreaders 34a (lower heat spreaders 34b) and the side heat spreaders 34d. As a result, when cooling gas G1 or cooling gas G2 is supplied to the cooling section 40, the amount of cooling gas G1 or cooling gas G2 supplied to the workpiece 100 can be increased. Furthermore, the amount of cooling gas G1 or cooling gas G2 discharged from the processing areas 30a and 30b can be reduced. Therefore, the workpiece 100 can be cooled efficiently.

[0161] Furthermore, immediately after the organic film is formed, the diffusion rate of cooling gas G1 from processing regions 30a and 30b into the interior of chamber 10 is preferably slow. When the diffusion rate of cooling gas G1 from processing regions 30a and 30b into the interior of chamber 10 is slow, the dispersal of sublimates within chamber 10 can be suppressed by utilizing the supplied cooling gas G1. Therefore, it is preferable to reduce the supply amount of cooling gas G1 immediately after the organic film is formed and gradually increase the supply amount.

[0162] When the output of the vacuum gauge (not shown) that detects the internal pressure of chamber 10 becomes the same as atmospheric pressure, the controller 60 closes valve 25 of the second exhaust section 22 and opens valve 25 of the third exhaust section 23, thus continuously exhausting the cooling gas G1.

[0163] When the temperature reading (not shown) reaches the threshold, the controller 60 controls the switching valve 54 to supply cooling gas G2 to the space equipped with multiple heaters 32a. This reduces the amount of N2 or rare gases used. Furthermore, during the removal process described later, the door 13 can be opened when the oxygen concentration is high. Therefore, the possibility of oxygen deficiency caused by N2 or rare gases can be suppressed.

[0164] During the workpiece removal process, when the temperature of the workpiece 100, to which the organic film has formed, reaches the third temperature, the supply of cooling gas G2 introduced into the chamber 10 is stopped. Then, the door 13 is opened and closed away from the flange 11, and the workpiece 100 is removed.

[0165] As described above, the workpiece 100, with an organic film formed, is removed from the processed chamber 10 and transported to the next process. Since the organic film is formed through heating, the temperature of the workpiece 100 becomes high, making it difficult to remove or transport the hot workpiece 100 from the chamber 10. Furthermore, if removed at high temperatures, the organic film may oxidize and fail to perform its function. Therefore, it is necessary to supply cooling gas G1 into the chamber 10 to cool the workpiece 100.

[0166] However, forming the organic film requires processing at extremely high temperatures of approximately 250°C to 600°C. Therefore, the amount of cooling gas G1 consumed before the workpiece reaches a transportable temperature becomes enormous. Furthermore, the organic film is highly reactive at temperatures between 250°C and 600°C. Therefore, if the cooling gas G1 contains oxygen, the organic film will oxidize. However, to prevent oxidation of the organic film, using an inert gas as the cooling gas G1 throughout the cooling process also increases costs.

[0167] The inventors have conducted extensive research and discovered that if the temperature of the organic film (workpiece 100) is around 200°C, the organic film will not be oxidized even if the cooling gas contains oxygen.

[0168] Therefore, the inventors performed multiple organic film formation steps, which included a cooling step in which the cooling gas G1 was switched to cooling gas G2 (CDA) when the temperature of the organic film (workpiece 100) was below 200°C. As a result, a partially oxidized organic film was produced.

[0169] The inventors conducted further research and found that cooling gas G2 used in the cooling process remained in the piping (common part) connecting the nozzle 41 and the switching valve 54.

[0170] In this embodiment, the organic film forming apparatus 1 heats the workpiece 100 after depressurizing the internal space of the chamber 10. It is assumed that depressurization also occurs in the common section during the depressurization of the internal space of the chamber 10. However, in reality, cooling gas G2 used in the cooling process remains in the common section. This is likely because the diameter of the nozzle 41's outlet for either cooling gas G1 or cooling gas G2 is small, making it impossible to adequately exhaust gas from the common section.

[0171] Therefore, in this embodiment, the organic film forming apparatus 1 supplies cooling gas G1 to the interior of the chamber 10 from the time the processed workpiece 100 is removed from the chamber 10 until the next workpiece 100 to be processed is moved into the chamber 10 and heated. This allows the cooling gas G2 remaining in the common section to be discharged.

[0172] In addition, when the cooling process of the workpiece 100 that has undergone the heat treatment process (2) begins after the workpiece 100 has been processed, the cooling gas G2 remaining in the common part is supplied to the chamber 10 to prevent it from coming into contact with the workpiece 100 which is above 250°C.

[0173] Furthermore, during the workpiece removal and workpiece loading processes, the internal space of chamber 10 is open to the external gas environment. Therefore, even if the common area is purged with cooling gas G1, air from the external gas environment may still enter the piping through nozzle 41. Therefore, during the workpiece loading process, it is preferable to supply cooling gas G1. It is particularly preferable to load all workpieces 100 into chamber 10 just before sealing opening 11a with front door 13.

[0174] Furthermore, the supply time of cooling gas G1 only needs to be set to the time required for the concentration of cooling gas G2 remaining in the piping to be diluted to a level that will not adversely affect the quality of the organic membrane. Additionally, the supply amount of cooling gas G1 can be less than the amount supplied during the cooling process. The time required for the concentration of cooling gas G2 remaining in the piping to be diluted to a level that will not adversely affect the quality of the organic membrane, or the supply amount of cooling gas G1, can be appropriately determined through simulation or experimentation.

[0175] Alternatively, cooling gas G1 can be supplied simultaneously with depressurization of the internal space of chamber 10. In this case, the supply time of cooling gas G1 can be set to a time during which it is diluted to a level that will not adversely affect the quality of the organic membrane.

[0176] Furthermore, according to the insights obtained by the inventors, if the oxygen concentration in chamber 10 is reduced to approximately 100 ppm, the oxidation reaction can be suppressed. In this case, the internal pressure of chamber 10 with an oxygen concentration of 100 ppm is approximately 100 Pa. Therefore, it is preferable to supply cooling gas G1 after reducing the internal pressure of chamber 10 to less than 1 Pa so that the internal pressure of chamber 10 does not exceed 100 Pa. Cooling gas G1 is supplied, and the oxygen concentration in chamber 10 is detected using oxygen concentration meter 21c. When the oxygen concentration falls below a threshold value, electricity is applied to heater 32a. This reliably suppresses adverse effects on the quality of the organic membrane. In this case, the threshold value is a value in the range of 0.1 ppm to 100 ppm.

[0177] Figure 4 This is a schematic perspective view illustrating an organic film forming apparatus 1a according to another embodiment.

[0178] The cooling section 40 has two valves 54a (an example of the first valve) instead of the switching valve 54. By having two valves, two different gases can be supplied to the interior of the chamber 10 simultaneously. Therefore, the flow rate of cooling gas that can be supplied to the interior of the chamber 10 can be increased, and the cooling process time can be shortened. In this case, it is preferable that the supply amount of cooling gas G1 is greater than the supply amount of cooling gas G2.

[0179] In addition, the cooling section 40 has a valve 54b (equivalent to an example of a second valve) for each nozzle 41. Thus, the supply and stop of cooling gas G can be controlled for each nozzle 41.

[0180] In the case of organic film forming apparatus 1a Figure 4 The piping, valve 54b, and nozzle 41 in section A are common components. In the organic film forming apparatus 1a, cooling gas G2 used in the cooling process remains in the piping of section A. As described above, the cooling gas G2 remaining in the common component is difficult to exhaust from the exhaust section 20 via the nozzle 41. Furthermore, if the exhaust section 20 is used to exhaust the cooling gas G2 remaining in the piping of section A, the airtightness of the chamber 10 may deteriorate.

[0181] Therefore, during the period between removing the processed workpiece 100 from the chamber 10 and moving the next workpiece 100 to be processed into the chamber 10, cooling gas G1 is supplied to the interior of the chamber 10. This allows the cooling gas G2 remaining in the common section to be discharged. Thus, the organic film forming apparatus 1a reduces the cost of cooling the workpiece 100 with the organic film formed, reliably suppresses adverse effects on the quality of the organic film, and prevents damage to the valve 54b.

[0182] Figure 5This is a schematic perspective view illustrating an organic film forming apparatus 1b according to another embodiment.

[0183] like Figure 5 As shown, the organic film forming apparatus 1b may also have another cooling section 140 (an example of a second cooling section).

[0184] The cooling unit 140 supplies cooling gas to the workpiece 100 located inside the processing zone 30a and processing zone 30b. That is, the cooling unit 140 directly cools the workpiece 100.

[0185] Like the cooling section 40, the cooling section 140 has a first supply path for supplying cooling gas G1 to the area where the heating section 32 is provided, a second supply path for supplying cooling gas G2 to the area where the heating section 32 is provided, and a common section. The difference between the cooling section 140 and the cooling section 40 is that the cooling section 140 has a nozzle 141 instead of a nozzle 41.

[0186] Figure 6 This is a schematic cross-sectional view illustrating an organic film forming apparatus 1b according to another embodiment.

[0187] At least one nozzle 141 may be provided inside the processing area 30a and the processing area 30b. The nozzle 141 may penetrate the cover 15 and the shroud 36, thereby allowing it to be mounted on the side heat spreader 34d or the frame 31, etc. In this embodiment, the nozzle 141 is installed at a position where cooling gas can be supplied to the back of the workpiece 100. Furthermore, multiple nozzles 141 may be provided in the X direction. Alternatively, the nozzle 141 may be a cylindrical shape with a closed front end. Moreover, multiple holes may be provided on the side of the nozzle 141, and it may be inserted from the side of the chamber 10.

[0188] In the case of cooling the workpiece 100 indirectly or directly, during the cooling process, if the temperature of the workpiece 100 is higher than a threshold temperature, cooling gas G1 is supplied to the area where the heating unit 32 is provided; if the temperature of the workpiece 100 is lower than the threshold temperature, cooling gas G2 is supplied from the cooling unit 40 and the cooling unit 140 to the area where the heating unit 32 is provided. This results in a substantial reduction in cooling time.

[0189] That is, when the temperature of workpiece 100 exceeds the threshold (200°C) and is in a state where it is prone to react with oxygen, workpiece 100 is cooled using a cooling gas G1 that does not contain oxygen (or has an oxygen concentration that will not adversely affect the quality of the organic film). This cools workpiece 100 while preventing oxidation. On the other hand, when the temperature of workpiece 100 is below the threshold and is in a state where it is not prone to react with oxygen, workpiece 100 is cooled using a cooling gas G2 that contains oxygen. This cools workpiece 100 while reducing costs and prevents oxygen deficiency when removing workpiece 100. Furthermore, the oxygen contained in cooling gas G2 is ideally in an amount sufficient to suppress the possibility of oxygen deficiency caused by N2 or rare gases, and is at a concentration that will not cause oxygen poisoning.

[0190] As described above, the method for manufacturing an organic film according to this embodiment includes: a workpiece loading step, in which a workpiece is loaded into a chamber capable of maintaining a gas environment depressurized to below atmospheric pressure, the workpiece having a substrate and a solution containing an organic material and a solvent coated on the upper surface of the substrate; a step of heating the workpiece in a gas environment depressurized to below atmospheric pressure; a step of cooling the workpiece having formed an organic film by the heating; and a step of removing the workpiece having formed the organic film. In the step of heating the workpiece, the workpiece is heated by a heating section disposed opposite to the workpiece in a processing area. In the step of cooling the workpiece, if the workpiece is at a temperature higher than a threshold, a first gas that does not readily react with the heated workpiece is supplied to the interior of the heating section. If the workpiece is at a temperature lower than the threshold, a second cooling gas is supplied to the interior of the heating section. The first cooling gas is supplied to the chamber from the step of removing the workpiece to the step of loading the workpiece.

[0191] The embodiments have been illustrated above. However, the present invention is not limited to these descriptions.

[0192] Any implementation method that can be derived by making appropriate design changes to the above-described embodiments, as long as it possesses the features of the present invention, is included within the scope of the present invention.

[0193] For example, the shape, size, and configuration of the organic membrane forming apparatus 1 are not limited to the example and can be appropriately modified.

[0194] Furthermore, the components included in the various embodiments described above can be combined as much as possible, and any embodiments obtained by combining these components that possess the features of the present invention are included within the scope of the present invention.

[0195] For example, switching valve 54 can also be used in combination with valve 54b.

Claims

1. An organic membrane forming apparatus, characterized in that, include: The chamber is capable of maintaining a gas environment that has been depressurized to below atmospheric pressure; The exhaust section is capable of venting the interior of the chamber and maintaining the pressure in the chamber at or below a predetermined pressure equal to or lower than atmospheric pressure. A processing area for supporting a workpiece having a substrate and a solution containing organic material and solvent coated on the upper surface of the substrate; A heating unit is disposed facing the workpiece supported in the processing area and heats the workpiece; A cooling section supplies cooling gas to the heating section; and The controller controls the heating unit, the exhaust unit, and the cooling unit. The cooling section has: The first gas supply path supplies a first cooling gas that does not readily react with the heated workpiece to the interior of the heating section. The first cooling gas is a gas that does not contain oxygen. The second gas supply path supplies a second cooling gas to the interior of the heating section, wherein the second cooling gas is a gas containing oxygen; The shared section is shared by the first gas supply path and the second gas supply path; and The first valve selectively supplies the first cooling gas supplied by the first gas supply path and the second cooling gas supplied by the second gas supply path to the common section. After the controller controls the exhaust section to reduce the internal pressure of the chamber to or below the predetermined pressure, the heating section heats the workpiece to a predetermined temperature above a threshold. After the heating element completes heating, if the workpiece reaches a temperature higher than a threshold, the controller controls the first valve to supply the first cooling gas to the heating element. If the workpiece is kept below a threshold temperature by supplying the first cooling gas, then the first valve is controlled to supply the second cooling gas to the heating section. After the pressure in the chamber is restored to atmospheric pressure by supplying the first cooling gas and the second cooling gas, the first valve is controlled to supply the first cooling gas into the chamber from the time the processed workpiece is removed from the chamber until the next workpiece to be processed is moved into the chamber and heated by the heating unit.

2. The organic film forming apparatus according to claim 1, characterized in that, It also includes an oxygen concentration meter for detecting the oxygen concentration within the chamber. After the controller moves the workpiece into the cavity, it applies pressure to the cavity. The first cooling gas is supplied into the depressurized chamber. The oxygen concentration in the chamber is detected using the oxygen concentration meter. Once the detected oxygen concentration in the chamber falls below a threshold value, power is supplied to the heating element.

3. The organic film forming apparatus according to claim 1 or 2, characterized in that, The cooling section also includes a second valve in the common section, which controls the supply and cessation of the cooling gas supplied to the heating section.

4. A method for manufacturing an organic membrane, characterized in that, include: The workpiece loading process involves loading the workpiece into a chamber capable of maintaining a gas environment that is depressurized to a predetermined pressure lower than atmospheric pressure. The workpiece has a substrate and a solution containing organic materials and a solvent coated on the upper surface of the substrate. The process of heating the workpiece in a gas environment at a predetermined pressure lower than atmospheric pressure; The process of cooling the workpiece to which the organic film has been formed by the heating process; and The process of removing the workpiece from which the organic film has been formed. In the process of heating the workpiece, after the internal pressure of the chamber becomes equal to or lower than the predetermined pressure, the workpiece is heated to a predetermined temperature above a threshold temperature by a heating element disposed opposite to the workpiece in the processing area. In the process of cooling the workpiece, After the heating process in the heating section is completed, if the workpiece is at a temperature higher than a threshold, a first cooling gas that does not readily react with the heated workpiece is supplied into the heating section. This first cooling gas is an oxygen-free gas. If the workpiece is brought to a temperature equal to or below a threshold value by supplying the first cooling gas, then a second cooling gas, which is an oxygen-containing gas, is supplied to the interior of the heating section. After the pressure in the chamber is restored to atmospheric pressure by supplying the first cooling gas and the second cooling gas, the workpiece removal process is carried out. During the period from the workpiece removal process to the workpiece insertion process, the first cooling gas is supplied to the chamber.

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