Etching liquid composition for silver-containing metal film

Abstract

The present invention provides an etching solution composition for a silver (Ag)-containing metal film, which comprises a specific metal salt compound. The etching solution composition according to the present invention can inhibit the occurrence of mouse bite phenomenon and prevent the etching rate of a transparent conductive film from decreasing due to external contamination sources.

Description

Technical Field

[0001] This invention relates to an etching solution composition for silver-containing metal films, and more specifically, to an etching solution composition for silver (Ag) metal films capable of suppressing mouse bite and preventing the etching rate of transparent conductive films from decreasing due to external contamination sources. Background Technology

[0002] Because OLEDs emit light themselves and can be driven at low voltages, they have been widely used in small displays such as portable devices as well as large televisions.

[0003] In addition, conductive metals such as indium tin oxide (ITO) and indium zinc oxide (IZO) have relatively excellent light transmittance and conductivity, and are therefore widely used as electrodes for color filters used in flat panel display devices.

[0004] Furthermore, in the case of reflectors, aluminum (Al) reflectors have been primarily used in products in the past, but in order to achieve low power consumption by increasing brightness, there is a search to change the material to a metal with higher reflectivity.

[0005] Therefore, a method has been proposed to use silver (Ag: resistivity about 1.59 μΩ·cm) or silver alloys, which have low resistivity and high brightness compared to metals used in flat panel display devices, as materials for electrodes of color filters, wiring of LCD or OLED wiring, and reflectors, and it is necessary to develop etching solutions for applying silver or silver alloys.

[0006] However, when using existing etching solutions with silver (Ag) or silver alloys, the following problems exist: the silver (Ag) is over-etched or etched unevenly, resulting in wire lifting or peeling, and poor side profiles of the wires. Furthermore, it is difficult to achieve low skew for high resolution.

[0007] In particular, silver (Ag) has a low oxidation / reduction potential, so after etching, re-adsorption, residues, etc. may occur. In this case, short circuits may occur between adjacent conductive patterns.

[0008] Furthermore, when using existing etching solutions to simultaneously etch multilayer films consisting of a silver (Ag) or silver alloy film and a transparent conductive film, the etching rate of the transparent conductive film may decrease due to external contaminants (such as organic chelating agents) generated during the etching process. When this decrease in the etching rate of the transparent conductive film occurs, the following problems arise: the required wiring cannot be formed within the same process time, and the probability of silver residue formation increases.

[0009] Furthermore, when using existing etching solutions to simultaneously etch a multilayer film consisting of a silver (Ag) or silver alloy film and a transparent conductive film, the "rat bite" phenomenon caused by localized over-etching of the silver film may lead to defects in subsequent processes.

[0010] Korean Patent Publication No. 10-2013-0130515 relates to an etching solution for silver-containing patterns and discloses an etching solution comprising nitric acid, oxalic acid, acetic acid, a sulfate compound as an oxidant and an azole compound as a corrosion inhibitor, and capable of simultaneously etching a single-layer film made of silver (Ag) or a silver alloy, as well as a multilayer film composed of the single-layer film and a transparent conductive film.

[0011] However, the above-mentioned etching solution cannot completely solve the problems of rat biting and reduced etching rate of transparent conductive film. Summary of the Invention

[0012] [The problem to be solved]

[0013] One object of the present invention is to provide an etching solution composition for silver (Ag) metal films that can suppress the occurrence of rodent biting and prevent the etching rate of transparent conductive films from being reduced due to external contamination sources.

[0014] Another object of the present invention is to provide a silver (Ag) metal wiring formed using the above-described etching solution composition for silver (Ag) metal films.

[0015] Another object of the present invention is to provide a method for manufacturing silver (Ag) metal wiring, the method comprising an etching process using an etchant composition for silver (Ag) metal films.

[0016] [Solutions to the problem]

[0017] Furthermore, the present invention provides an etching solution composition for silver (Ag) metal films, comprising nitric acid, an organic acid, and a metal salt compound, wherein the metal salt compound comprises at least one metal selected from the group consisting of niobium (Nb), cobalt (Co), zirconium (Zr), hafnium (Hf), bismuth (Bi), palladium (Pd), and uranium (U).

[0018] In one embodiment of the present invention, the silver (Ag) metal film may be a single-layer film made of silver (Ag) or a silver alloy, or a multilayer film composed of the single-layer film and a transparent conductive film.

[0019] In one embodiment of the present invention, the transparent conductive film may be a film comprising at least one of indium tin oxide (ITO), indium zinc oxide (IZO), indium tin oxide (ITZO), and zinc gallium oxide (IGZO).

[0020] In one embodiment of the present invention, the organic acid may include alkyl sulfonic acids having 1 to 3 carbon atoms and organic acids other than alkyl sulfonic acids.

[0021] In one embodiment of the present invention, the alkyl sulfonic acid having 1 to 3 carbon atoms may include at least one selected from the group consisting of methanesulfonic acid, ethanesulfonic acid, and propanesulfonic acid.

[0022] In one embodiment of the present invention, the organic acid other than alkyl sulfonic acid may include at least one selected from the group consisting of acetic acid, citric acid, glycolic acid, malonic acid, lactic acid and tartaric acid.

[0023] In one embodiment of the present invention, the metal salt compound may include at least one metal selected from the group consisting of zirconium (Zr) and bismuth (Bi).

[0024] In one embodiment of the invention, the content of the metal salt compound relative to the total weight of the composition may be from 0.01 to 0.5% by weight.

[0025] The etching solution composition for silver (Ag) metal films according to embodiments of the present invention may further include sulfate compounds.

[0026] In one embodiment of the present invention, the sulfate compound may include at least one selected from the group consisting of alkali metal salts of sulfuric acid, alkaline earth metal salts of sulfuric acid, and ammonium salts of sulfuric acid.

[0027] The etching solution composition for silver (Ag) metal films according to embodiments of the present invention may contain 8 to 15% by weight of nitric acid, 30 to 63% by weight of organic acid, and 0.01 to 0.5% by weight of metal salt compound relative to the total weight of the composition, and may contain the remaining amount of water such that the total weight of the composition is 100% by weight.

[0028] The etching solution composition for silver (Ag) metal films according to embodiments of the present invention may contain 8 to 15% by weight of nitric acid, 30 to 63% by weight of organic acid, 7 to 25% by weight of sulfate compound, and 0.01 to 0.5% by weight of metal salt compound relative to the total weight of the composition, and may contain the remainder of water such that the total weight of the composition is 100% by weight.

[0029] Furthermore, the present invention provides a silver (Ag) metal wiring formed using the etching solution composition for silver (Ag) metal films.

[0030] Furthermore, the present invention provides a method for manufacturing silver (Ag) metal wiring, comprising an etching process using an etching solution composition for silver (Ag) metal films.

[0031] [Invention Effects]

[0032] The etching solution composition for silver (Ag) metal films according to the present invention can suppress the occurrence of rodent bites and prevent the etching rate of transparent conductive films from decreasing due to external contamination sources. Detailed Implementation

[0033] The invention will be described in more detail below.

[0034] One embodiment of the present invention relates to an etching solution composition for silver (Ag) metal films, comprising nitric acid, an organic acid and a metal salt compound, wherein the metal salt compound comprises at least one metal selected from the group consisting of niobium (Nb), cobalt (Co), zirconium (Zr), hafnium (Hf), bismuth (Bi), palladium (Pd) and uranium (U).

[0035] In one embodiment of the present invention, the silver (Ag) metal film may be a single-layer film made of silver (Ag) or a silver alloy, or a multilayer film composed of the single-layer film and a transparent conductive film. That is, the etching solution composition for the silver (Ag) metal film of the present invention can not only etch single-layer films made of silver (Ag) or silver alloys, but also simultaneously etch multilayer films composed of the single-layer film and a transparent conductive film.

[0036] Silver alloys can be alloys with silver as the main component and containing other metals such as Nd, Cu, Pd, Nb, Ni, Mo, Ni, Cr, Mg, W, Pa, and Ti; as well as various forms of silver such as nitrides, silicides, carbides, and oxides.

[0037] In one embodiment of the present invention, the transparent conductive film may be a film comprising at least one of indium tin oxide (ITO), indium zinc oxide (IZO), indium tin oxide (ITZO), and zinc gallium oxide (IGZO).

[0038] The multilayer film can be formed from transparent conductive film / silver, transparent conductive film / silver alloy, transparent conductive film / silver / transparent conductive film, or transparent conductive film / silver alloy / transparent conductive film.

[0039] The components of the etching solution composition according to embodiments of the present invention will be described in more detail below.

[0040] Nitric acid(A)

[0041] In one embodiment of the present invention, nitric acid (A) can be used as an oxidant to oxidize a single-layer film made of silver (Ag) or a silver alloy, i.e., a silver film and a transparent conductive film.

[0042] The content of nitric acid relative to the total weight of the composition can be 8 to 15% by weight, preferably 8 to 12% by weight. When the nitric acid is contained within the above content range, the etching rate is easily controlled, thereby allowing for uniform etching of the silver film and the transparent conductive film.

[0043] Organic acids (B)

[0044] In one embodiment of the invention, an organic acid (B) can be used as an etchant for a silver film to etch a silver film oxidized by nitric acid.

[0045] The organic acid may include alkyl sulfonic acids having 1 to 3 carbon atoms (B-1) and organic acids other than alkyl sulfonic acids (B-2).

[0046] The content of the organic acid relative to the total weight of the composition can be from 30% to 63% by weight. When the organic acid is contained within the above content range, defects caused by silver residue and silver re-adsorption can be prevented because the etching rate of the silver film is easily controlled.

[0047] Alkyl sulfonic acids with 1 to 3 carbon atoms (B-1)

[0048] The alkyl sulfonic acid (B-1) having 1 to 3 carbon atoms can be used together with a silver film oxidized by nitric acid to etch a transparent conductive film.

[0049] Examples of alkyl sulfonic acids having 1 to 3 carbon atoms include methanesulfonic acid, ethanesulfonic acid, and propanesulfonic acid. These can be used alone or in combination. Preferably, methanesulfonic acid can be used as the alkyl sulfonic acid having 1 to 3 carbon atoms.

[0050] The alkyl sulfonic acid having 1 to 3 carbon atoms may contain 3 to 8% by weight relative to the total weight of the composition. When the alkyl sulfonic acid is contained within the above-mentioned content range, it is easy to control the etching rate of the silver film and the etching rate of the transparent conductive film, and defects caused by silver residue and silver re-adsorption can be prevented.

[0051] Organic acids other than alkyl sulfonic acids (B-2)

[0052] The organic acid (B-2) other than alkyl sulfonic acid is used as an etchant for the silver film and can be used to etch the silver film oxidized by nitric acid.

[0053] Examples of organic acids other than alkyl sulfonic acids include acetic acid, citric acid, glycolic acid, malonic acid, lactic acid, and tartaric acid. These can be used alone or in combination. Preferably, acetic acid and citric acid can be used as the organic acids other than alkyl sulfonic acids.

[0054] The content of the organic acid, excluding alkyl sulfonic acid, relative to the total weight of the composition can be 25% to 55% by weight. When the organic acid is included in the above content range, it is easy to control the etching rate of the silver film and to prevent defects caused by silver residue and silver re-adsorption.

[0055] Metal salt compounds (C)

[0056] In one embodiment of the present invention, the metal salt compound (C) serves as an etching rate maintaining agent for the transparent conductive film, preventing a decrease in the etching rate of the transparent conductive film due to external contaminants (organic chelating agents, etc.) that may occur during the etching process. Specifically, the metal salt compound (C) prevents external contaminants generated during the etching process from being adsorbed onto the transparent conductive film.

[0057] In fact, the etching equipment used in the etching process may contain contaminants caused by photoresist residue, organic materials in the substrate, or various impurities. These contaminants may be adsorbed onto the transparent conductive film, causing interference with the etching process.

[0058] The metal salt compounds mentioned above do not include metal salt compounds capable of oxidizing silver films (e.g., metal salt compounds containing metals such as iron and molybdenum).

[0059] Furthermore, since the etching solution composition for silver (Ag) metal films according to one embodiment of the present invention can oxidize silver films, it is preferable not to contain metal components such as iron and molybdenum.

[0060] The metal salt compound is at least one metal selected from the group consisting of niobium (Nb), cobalt (Co), zirconium (Zr), hafnium (Hf), bismuth (Bi), palladium (Pd) and uranium (U), and preferably contains at least one metal selected from zirconium (Zr) and bismuth (Bi).

[0061] For example, the metal salt compound can be zirconium phosphate, zirconium sulfate, bismuth nitrate, lithium niobate, cobalt acetate, hafnium oxide (HfO2), palladium acetate, uranium nitrate, etc., which can be used alone or in combination of two or more. Preferably, zirconium phosphate, zirconium sulfate, and / or bismuth nitrate can be used as the metal salt compound.

[0062] The content of the metal salt compound relative to the total weight of the composition can be from 0.01 to 0.5% by weight. When the metal salt compound is included in the above content range, it can prevent the reduction of the etching rate of the transparent conductive film due to external contamination sources, and avoid local over-etching of certain wirings, i.e., rodent bite, due to the use of the metal salt compound.

[0063] Sulfate compounds (D)

[0064] The etching solution composition for silver (Ag) metal films according to embodiments of the present invention may further include a sulfate compound (D).

[0065] In one embodiment of the invention, the sulfate compound (D) serves as an etchant for the transparent conductive film, and can be used to etch the transparent conductive film. Furthermore, the sulfate compound (D) causes an etching stop phenomenon in the silver film, thus preventing an increase in side etch even when the etching time is increased during the etching process. In other words, the sulfate compound (D) can control the occurrence of the etching stop phenomenon, thereby controlling the etching rate and controlling side etch.

[0066] The sulfate compound may include at least one selected from the group consisting of alkali metal salts of sulfuric acid, alkaline earth metal salts of sulfuric acid, and ammonium salts of sulfuric acid.

[0067] For example, the sulfate compound can be, for instance, potassium bisulfate, sodium bisulfate, ammonium bisulfate, etc. They can be used alone or in combination of two or more.

[0068] The content of the sulfate compound relative to the total weight of the composition can be from 7% to 25% by weight. When the sulfate compound is within the specified content range, the etching rate (i.e., the etching time in the etching process) is easily controlled, and the etching stop phenomenon is regularly observed, thereby enabling uniform etching of silver films and transparent conductive films.

[0069] Water (E)

[0070] Furthermore, the etching solution composition according to one embodiment of the present invention may contain a residual amount of water such that the total weight of the composition is 100% by weight. In the present invention, there are no particular limitations on the water, but deionized water for semiconductor processing is preferred, and more preferably deionized water with a resistivity of 18 MΩ·cm or higher that indicates the degree of ion removal from the water.

[0071] The term "residual amount" in this invention refers to the amount remaining to make the total composition containing the essential ingredients of this invention and other additional components 100% by weight. Due to the meaning of "residual amount", the compositions of this invention are not limited to those without additional components.

[0072] According to one embodiment of the invention, an etching solution composition for silver (Ag) metal films may contain 8 to 15% by weight of nitric acid, 30 to 63% by weight of organic acid, and 0.01 to 0.5% by weight of metal salt compound relative to the total weight of the composition, and may contain the remainder of water such that the total weight of the composition is 100% by weight.

[0073] According to one embodiment of the invention, an etching solution composition for silver (Ag) metal films may contain 8 to 15% by weight of nitric acid, 3 to 8% by weight of alkyl sulfonic acid having 1 to 3 carbon atoms, 25 to 55% by weight of organic acid other than alkyl sulfonic acid, and 0.01 to 0.5% by weight of metal salt compound relative to the total weight of the composition, and may contain the remainder of water such that the total weight of the composition is 100% by weight.

[0074] According to one embodiment of the invention, an etching solution composition for silver (Ag) metal films may contain 8 to 15% by weight of nitric acid, 30 to 63% by weight of organic acid, 7 to 25% by weight of sulfate compound, and 0.01 to 0.5% by weight of metal salt compound relative to the total weight of the composition, and may contain the remainder of water such that the total weight of the composition is 100% by weight.

[0075] According to one embodiment of the invention, an etching solution composition for silver (Ag) metal films may contain 8 to 15% by weight of nitric acid, 3 to 8% by weight of alkyl sulfonic acid having 1 to 3 carbon atoms, 25 to 55% by weight of organic acid other than alkyl sulfonic acid, 7 to 25% by weight of sulfate compound, and 0.01 to 0.5% by weight of metal salt compound relative to the total weight of the composition, and may contain the remainder of water such that the total weight of the composition is 100 by weight.

[0076] The components of the etching solution composition according to one embodiment of the present invention can be prepared by conventionally known methods, and preferably have a purity suitable for semiconductor processes.

[0077] The etching solution composition according to one embodiment of the present invention can suppress the occurrence of rat biting and prevent the etching rate of the transparent conductive film from decreasing due to external contamination sources.

[0078] Furthermore, the etching solution composition according to one embodiment of the present invention can produce an etching stop phenomenon, thereby controlling the etching rate and controlling side etching. Therefore, in the etching solution composition according to one embodiment of the present invention, fine patterning of multilayer films can be achieved.

[0079] Furthermore, in the etching solution composition according to one embodiment of the present invention, etching performance can be maintained even when the number of sheets being processed is increased.

[0080] The etching solution composition for silver (Ag) metal films of the present invention can be used to form OLED TFT array substrates for reflective films, traces or nanowire wiring for touch screen panels, but is not limited thereto, and can be used for electronic component materials including single-layer films and multilayer films.

[0081] Therefore, one embodiment of the present invention relates to a silver (Ag) metal wiring formed using the above-described etching solution composition for silver (Ag) metal films.

[0082] The silver-containing (Ag) metal wiring according to embodiments of the present invention can be manufactured by using the above-described etching solution composition through an etching process known in the art.

[0083] One embodiment of the present invention relates to a method for manufacturing silver (Ag) metal wiring, the method comprising an etching process using the above-described etching solution composition for silver (Ag) metal films.

[0084] Specifically, the method for manufacturing the silver (Ag) metal wiring may include the following steps: i) forming a single-layer film made of silver or a silver alloy, or a multilayer film composed of the single-layer film and a transparent conductive film on a substrate; ii) patterning the single-layer film or the multilayer film after forming a photoresist film on the single-layer film or the multilayer film; and iii) etching the single-layer film or the multilayer film using the above-described etching solution composition.

[0085] The present invention will be described in more detail below by way of examples, comparative examples, and experimental examples. These examples, comparative examples, and experimental examples are for illustrative purposes only, and it will be apparent to those skilled in the art that the scope of the invention is not limited thereto.

[0086] Examples 1 to 5 and Comparative Examples 1 to 5:

[0087] As shown in Table 1 below, the components were mixed and the remaining amount of deionized water was added to make the total amount 100% by weight (unit: weight%) to prepare the etching solution composition.

[0088] Table 1

[0089]

[0090] Experimental Example 1:

[0091] The silver (Ag) re-adsorption, reduction in the etching rate of the transparent conductive film, and rat biting phenomenon of the etching solution compositions of the above-prepared examples and comparative examples were evaluated as follows, and the results are shown in Table 2 below.

[0092] (1) Silver (Ag) re-adsorption

[0093] After forming an ITO / silver / ITO three-layer film on the substrate, photoresist is patterned on the three-layer film.

[0094] The etching solutions of the examples and comparative examples were placed in a jet etching apparatus (model: ETCHER (TFT), SEMES Corporation). The temperature was set to 40°C and raised to 40 ± 0.1°C. Etching of the samples was then performed. The total etching time was 85 seconds. A substrate (4 × 4 cm) was placed and sprayed. After the 85-second etching time, the substrate was removed, washed with deionized water, and dried with hot air. After cleaning and drying, the substrate was cut to obtain analytical samples (0.5 × 0.5 cm), which were measured using a scanning electron microscope (SEM; model: SU-8010, manufactured by HITACHI Corporation). The number of silver particles in the upper Ti of the Ti / Al / Ti triple film exposed in the source / drain regions of the substrate due to the etching process was measured and evaluated according to the following evaluation criteria:

[0095] <Evaluation Criteria>

[0096] Good: The number of silver adsorbed is less than 10.

[0097] Defect: The number of silver adsorbed exceeds 10.

[0098] (2) Phenomenon of reduced etching rate of transparent conductive film

[0099] After forming an ITO / silver / ITO triple film on the substrate, the etching solution compositions of the examples and comparative examples were placed in a jet etching experimental apparatus (model: ETCHER (TFT), SEMES). The temperature was set to 40°C and raised until it reached 40 ± 0.1°C, at which point the samples were etched. To simulate the effect of external contaminants, ethylenediamine and polyvinyl butyral at concentrations of 100 ppm and 50 ppm, respectively, were used as artificial organic contaminants. The etching rate was determined by comparing the etching time of the top ITO film before and after the addition of the organic contaminants. A decrease in etching rate was defined as greater than 5% based on the initial etching completion time (EPD) of the top ITO film and marked with ○; a decrease of less than 5% was defined as experimental error and marked with ×.

[0100] (3) Rat gnawing phenomenon (local over-etching of wiring)

[0101] The "rat bite" phenomenon is a localized over-etching phenomenon that occurs during the etching process. It is named for the fact that the patterned wiring looks like it has been swallowed by a rat.

[0102] This is because the etching solution composition penetrates into pinholes caused by uneven formation of the upper indium oxide film and impurities such as dust, resulting in localized over-etching. This phenomenon is observed in etching solutions containing oxidants such as some metals and some metal salts that contain silver films.

[0103] After forming an ITO / silver / ITO three-layer film on the substrate, the etching solution compositions of the examples and comparative examples were placed in a jet etching experimental apparatus (model: ETCHER (TFT), SEMES). The temperature was set to 40°C and heated. When the temperature reached 40±0.1°C, the samples were etched.

[0104] After etching, an optical microscope (model: OLS5000, OLYMPUS) was used to observe whether rat bites had occurred.

[0105] ○: Rat bites have occurred.

[0106] ×: No rat bites occurred.

[0107] Table 2

[0108]

[0109] As can be seen from Table 2 above, the etching solution compositions of Examples 1 to 5 containing specific metal salt compounds did not exhibit rat biting phenomenon, nor was a decrease in the etching rate of the transparent conductive film observed.

[0110] Conversely, in the etching solution compositions of Comparative Examples 1 to 3 that do not contain specific metal salt compounds or exceed the above-mentioned content range, a decrease in the etching rate of the transparent conductive film occurs, or precipitates appear in the etching solution due to excessive use of metal salts.

[0111] Furthermore, it was found that the etching solution compositions of Comparative Examples 4 and 5, which used molybdenum or iron salts, caused rat biting by oxidizing silver.

[0112] The foregoing has described specific parts of the present invention in detail. It will be apparent to those skilled in the art that these specific techniques are merely preferred embodiments, and the scope of protection of the present invention is not limited thereto. Those skilled in the art will be able to make various applications and modifications within the scope of the present invention based on the foregoing description.

[0113] Therefore, the essential scope of the invention will be defined by the appended claims and their equivalents.

Claims

1. An etching solution composition for a silver (Ag) -containing metal film, comprising nitric acid, an organic acid, and a metal salt compound, and the organic acid comprises an alkylsulfonic acid having a carbon number of 1 to 3 and an organic acid other than the alkylsulfonic acid, The alkylsulfonic acid having a carbon atom number of 1 to 3 includes: at least one selected from the group consisting of methanesulfonic acid, ethanesulfonic acid, and propanesulfonic acid, the organic acid other than the alkylsulfonic acid comprises at least one selected from the group consisting of acetic acid, citric acid, glycolic acid, malonic acid, lactic acid, and tartaric acid, the metal salt compound consists of at least one of a zirconium (Zr) salt and a bismuth (Bi) salt, and the etching solution composition comprises 8 to 15 wt% of the nitric acid, 30 to 63 wt% of the organic acid, and 0.01 to 0.5 wt% of the metal salt compound, with respect to the total weight of the etching solution composition.

2. The etching liquid composition for a silver (Ag)-containing metal film according to claim 1, wherein the silver (Ag) -containing metal film is a single layer film made of silver (Ag) or silver alloy, or a multi layer film composed of the single layer film and a transparent conductive film.

3. The etching liquid composition for a silver (Ag)-containing metal film according to claim 2, wherein the transparent conductive film is a film comprising at least one of indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), and indium gallium zinc oxide (IGZO). 4.The etching solution composition for a silver (Ag) -containing metal film according to claim 1, further comprising a sulfate compound.

5. The etching liquid composition for a silver (Ag)-containing metal film according to claim 4, wherein the sulfate compound comprises at least one selected from the group consisting of an alkali metal salt of sulfuric acid, an alkaline earth metal salt of sulfuric acid, and an ammonium salt of sulfuric acid. 6.The etching solution composition for a silver (Ag) -containing metal film according to claim 1, comprising nitric acid in an amount of 8 to 15 wt%, an organic acid in an amount of 30 to 63 wt%, and a metal salt compound in an amount of 0.01 to 0.5 wt%, with respect to the total weight of the composition, and comprising a remaining amount of water so that the total weight of the composition is 100 wt%. 7.The etching solution composition for a silver (Ag) -containing metal film according to claim 4, comprising nitric acid in an amount of 8 to 15 wt%, an organic acid in an amount of 30 to 63 wt%, a sulfate compound in an amount of 7 to 25 wt%, and a metal salt compound in an amount of 0.01 to 0.5 wt%, with respect to the total weight of the composition, and comprising a remaining amount of water so that the total weight of the composition is 100 wt%. 8.A method of manufacturing a silver (Ag) -containing metal wiring, comprising an etching process using the etching solution composition for a silver (Ag) -containing metal film according to any one of claims 1 to 7.

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