A chamber leak rate detection method and a cluster-type semiconductor process apparatus

Abstract

The embodiment of the present application provides a chamber leakage detection method and a cluster type semiconductor process equipment, the cluster type semiconductor process equipment comprises a transmission platform and chambers located around the transmission platform, the chambers are connected with the transmission platform through valves, and each chamber is independent of each other, and the method comprises the following steps: determining a master chamber and slave chambers of the master chamber from the transmission platform and the chambers; and detecting the leakage of a vacuum cavity composed of the master chamber and the slave chambers. According to the embodiment of the present application, whether the chambers of the semiconductor process equipment are connected with the platform and have air leakage can be detected.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor technology, and in particular, to a chamber leakage detection method and a cluster type semiconductor process equipment. BACKGROUND

[0002] In the field of semiconductor processing, the definition of cluster tool given by Semiconductor Equipment and Materials International (SEMI) is an integrated manufacturing system that is physically connected together and can be used to process different process modules and transfer modules. Cluster tool is an important type of semiconductor equipment, with a platform in the middle and several chambers suspended around the platform. A robot is installed in the platform to pick and place wafers in each chamber. During the operation of each chamber of the semiconductor equipment, the internal environment must be highly isolated from the external environment, and any slight leakage will affect the process results. Generally, the leakage rate of the chamber is measured by the rate of pressure change over time under a closed state, which is referred to as the pressure rise rate.

[0003] When the chamber and the platform are connected at a position where gas leakage occurs, the pressure rise rate measured by the closed vacuum systems of the chamber and the platform cannot reflect the sealing state of the connection between the chamber and the platform. SUMMARY

[0004] In view of the above problems, the embodiments of the present application are proposed to provide a chamber leakage detection method and a corresponding cluster type semiconductor process equipment to overcome the above problems or at least partially solve the above problems.

[0005] To solve the above problems, the embodiments of the present application disclose a chamber leakage detection method applied to a cluster type semiconductor process equipment, wherein the cluster type semiconductor process equipment comprises a transfer platform and chambers located around the transfer platform, the chambers are connected with the transfer platform through valves, the chambers are independent of each other, and the method comprises the following steps:

[0006] determining a master chamber and slave chambers of the master chamber from the transfer platform and the chambers;

[0007] detecting the leakage rate of a vacuum cavity composed of the master chamber and the slave chambers.

[0008] Optionally, the step of determining a master chamber and slave chambers of the master chamber from the transfer platform and the chambers comprises:

[0009] determining the transfer platform as the master chamber and at least one of the chambers as the slave chamber.

[0010] Optionally, the step of determining at least one of the chambers as the slave chamber comprises:

[0011] determining values of all the mark bits corresponding to the chambers, wherein the values include a first value and a second value, the first value is used to indicate that the chamber is the slave chamber, and the second value is used to indicate that the chamber independently performs leak rate detection;

[0012] determining the chamber with the first value of the mark bit as the slave chamber.

[0013] Optionally, the determination of a master chamber and slave chambers of the master chamber from the transfer platform and the chambers includes:

[0014] determining one of the chambers as the master chamber and the transfer platform as the slave chamber.

[0015] Optionally, the determination of the master chamber includes:

[0016] determining values of all the mark bits corresponding to the transfer platform, wherein the number of the mark bits corresponding to the transfer platform is the same as the number of the chambers connected to the transfer platform, the mark bits correspond to the chambers one by one, and the values include a third value and a fourth value, the third value is used to indicate that the transfer platform is the slave chamber of the chamber corresponding to the mark bit, and the fourth value is used to indicate that the chamber corresponding to the mark bit independently performs leak rate detection;

[0017] determining the chamber corresponding to the mark bit with the third value as the master chamber.

[0018] Optionally, the detection of the leak rate of the vacuum chamber composed of the master chamber and the slave chambers includes:

[0019] opening a valve between the master chamber and the slave chambers to make the master chamber and the slave chambers communicate;

[0020] detecting the leak rate of the vacuum chamber composed of the master chamber and the slave chambers by using a vacuum system in the master chamber.

[0021] Optionally, before the opening of the valve between the master chamber and the slave chambers to make the master chamber and the slave chambers communicate, the method further includes:

[0022] respectively performing air extraction in the master chamber and the slave chambers to make the master chamber and the slave chambers respectively in a vacuum state.

[0023] The embodiment of the present application also discloses a cluster type semiconductor process equipment, which comprises a transmission platform and chambers located around the transmission platform, the chambers are connected with the transmission platform through valves, the chambers are independent of each other, and the cluster type semiconductor process equipment further comprises:

[0024] a controller, which is used for determining a master chamber and slave chambers of the master chamber from the transmission platform and the chambers, and controlling a vacuum system in the master chamber to detect a leak rate of a vacuum cavity composed of the master chamber and the slave chambers.

[0025] Optionally, the controller is used for determining the transmission platform as the master chamber and at least one of the chambers as the slave chamber.

[0026] Optionally, the controller is used for determining values of corresponding mark bits of all the chambers, wherein the values include a first value and a second value, the first value is used for indicating that the chamber is the slave chamber, and the second value is used for indicating that the chamber performs leak rate detection independently; and the chamber with the mark bit having the first value is determined as the slave chamber.

[0027] Optionally, the controller is used for determining one of the chambers as the master chamber and the transmission platform as the slave chamber.

[0028] Optionally, the controller is used for determining values of all mark bits corresponding to the transmission platform, wherein the number of the mark bits corresponding to the transmission platform is the same as the number of the chambers connected with the transmission platform, the mark bits correspond to the chambers one by one, the values include a third value and a fourth value, the third value is used for indicating that the transmission platform is the slave chamber of the chamber corresponding to the mark bit, and the fourth value is used for indicating that the chamber corresponding to the mark bit performs leak rate detection independently; and the chamber corresponding to the mark bit with the third value is determined as the master chamber.

[0029] Optionally, the controller is used for controlling to open the valves between the master chamber and the slave chambers, so that the master chamber and the slave chambers are communicated.

[0030] Optionally, the controller is used for controlling to perform air exhaust in the master chamber and the slave chambers respectively, so that the master chamber and the slave chambers are in vacuum states respectively.

[0031] The embodiment of the present application has the following advantages:

[0032] In the embodiment of the present application, the transfer platform and the chamber in the Cluster type semiconductor processing equipment can be combined into a vacuum cavity, and the entire vacuum cavity can be subjected to leak rate detection. By using this method, whether the chamber and the platform of the semiconductor processing equipment are connected with air leakage can be detected. BRIEF DESCRIPTION OF DRAWINGS

[0033] Figure 1 is a schematic diagram of a single-platform Cluster type semiconductor processing equipment;

[0034] Figure 2 is a schematic diagram of a double-platform Cluster type semiconductor processing equipment;

[0035] Figure 3 is a flowchart of a chamber leak rate detection method;

[0036] Figure 4 is a step flowchart of a chamber leak rate detection method according to an embodiment of the present application;

[0037] Figure 5 is a step flowchart of another chamber leak rate detection method according to an embodiment of the present application;

[0038] Figure 6 is a flowchart of a chamber leak rate detection method according to an embodiment of the present application;

[0039] Figure 7 is a structural block diagram of a Cluster type semiconductor processing equipment according to an embodiment of the present application. DETAILED DESCRIPTION

[0040] In order to make the above objectives, features and advantages of the present application more apparent, further specific embodiments of the present application will be described in detail below with reference to the accompanying drawings and specific embodiments. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art belong to the scope of protection of the present application.

[0041] In the field of semiconductor processing, the definition of Cluster Tool given by Semiconductor Equipment and Materials International (SEMI) is an integrated manufacturing system that is physically connected together and can be used to process different process modules and transfer modules. Cluster type machine is an important type of semiconductor equipment, which has a platform in the middle and a plurality of chambers suspended around the platform. The platform is provided with a robot, and the robot is used to complete the pick-and-place operation of the chambers.

[0042] REFERENCE Figure 1The image shows a single-platform cluster-type semiconductor process equipment. The central transfer platform is the Transfer Chamber, surrounded by eight suspended chambers: two LoadLock chambers and six Process Chamber chambers. The LoadLock chambers handle transfer and cooling, while the Process Chamber chambers are the process chambers, which can be further subdivided into Degas, Preclean, PVD, CVD, and other types. Each chamber is connected to the transfer platform via a slit valve.

[0043] Reference Figure 2 The image shows a dual-platform cluster-type semiconductor process equipment. This equipment has two transfer platforms: a Buffer Chamber and a Transfer Chamber. Surrounding the transfer platforms are suspended chambers, including a Load Lock chamber and a Process Chamber, as well as a PassThrough chamber. The PassThrough chamber is connected to both transfer platforms and primarily performs transfer and cooling functions.

[0044] During operation, the internal environment of each chamber in a semiconductor equipment must be highly isolated from the external environment; even a microleak can affect the process results. The leakage rate of a chamber is generally measured by the rate of change of pressure over time when the chamber is in a sealed state.

[0045] Each chamber and transfer platform in the semiconductor equipment has an independent vacuum system. Vacuum gauges are installed in both the transfer platform and the chambers. The readings of these gauges reflect the pressure within the chamber or transfer platform, and evacuation operations can be performed by a coarse pump or a high vacuum pump. (Refer to...) Figure 3 The diagram shown is a flowchart of a chamber leak rate detection method, which mainly includes the following steps:

[0046] 1. When performing leak rate testing, all intake valves, isolation valves, and Slit valves in the chamber can be closed first;

[0047] 2. Determine if the pressure in the chamber is not in a vacuum state. If it is not in a vacuum state, open the roughing valve to evacuate the chamber to a vacuum state and then close the evacuation valve. If it is not in a vacuum state, proceed to the next step.

[0048] 3. Determine whether a high vacuum pump is installed in the chamber. If so, open the valve of the high vacuum pump to continue evacuating the chamber to a high vacuum state, and close the valve after the chamber pressure stabilizes. If not, proceed to the next step.

[0049] 4. Read the pressure value of the current chamber from the vacuum gauge, and read the pressure value in the chamber again after a period of time, according to the two pressure values and the time difference, the pressure rise rate of the chamber can be calculated, when the pressure rise rate reaches the industry standard, the corresponding process can be carried out in the chamber.

[0050] The process of detecting the leakage rate of the transmission platform is similar to the above process, and the above detection method has the following problems:

[0051] 1) When the chamber and the platform are connected at the position where the gas leaks, the pressure rise rate measured by the respective closed vacuum systems of the chamber or the platform cannot reflect the sealing state of the connection between the chamber and the platform, and the wafer is transferred from the robot to the chamber, and the Slit valve between the chamber and the platform needs to be opened during each wafer taking and placing process, and if the connection leaks, the cleanliness of the chamber cannot be guaranteed (this situation occurs when the Slit valve just blocks the gas leakage port, and when the Slit valve is closed, the gas leakage port is blocked, so the chamber and the platform do not leak, but when the Slit valve is opened, the gas leakage port is exposed);

[0052] 2) When the chamber is provided with a high vacuum pump and a high vacuum valve, the vacuum degree of the chamber can reach 10 -9 Torr level, the high vacuum gauge is sensitive to pressure change, but the LoadLock chamber, the PassThrough chamber, the Degas chamber and the like generally do not have a high vacuum pump and a high vacuum gauge, and the vacuum degree is 10 -4 Torr level, and the pressure rise rate measured by such a chamber has a large error and cannot accurately reflect the gas leakage of the chamber.

[0053] Therefore, the present application provides a chamber leakage rate detection method and a corresponding cluster type semiconductor process equipment to overcome the above problems or at least partially solve the above problems.

[0054] One of the core ideas of the embodiments of the present application is that the transmission platform and the chamber in the cluster type semiconductor process equipment can be combined into a vacuum cavity, and the leakage rate of the whole vacuum cavity can be detected. By using this method, whether the chamber and the platform of the semiconductor process equipment are connected at the position where the gas leaks can be detected.

[0055] Referring to Figure 4 , a step flow chart of a chamber leakage rate detection method according to an embodiment of the present application is shown, which is applied to a cluster type semiconductor process equipment, wherein the cluster type semiconductor process equipment comprises a transmission platform and chambers located around the transmission platform, the chambers are connected with the transmission platform through valves, and the chambers are independent of each other, and the method can specifically include the following steps:

[0056] Step 401, determining a master chamber and slave chambers of the master chamber from the transmission platform and the chambers.

[0057] In the embodiments of the present application, the cluster type semiconductor process equipment can be a single-platform Cluster type semiconductor process equipment or a double-platform Cluster type semiconductor process equipment. The transfer platform in the cluster type semiconductor process equipment is a platform chamber for transferring wafers, and a robot can be arranged on the transfer platform.

[0058] There can be multiple chambers around the transfer platform, and a valve is arranged between the chambers and the transfer platform. When the valve is opened, the chambers and the transfer platform are in communication; when the valve is closed, the chambers and the transfer platform are independent of each other. In addition, the chambers around the transfer platform are independent of each other, and the chambers can be in communication through the transfer platform.

[0059] In the embodiments of the present application, the chambers can be in communication with the transfer platform for communication detection. The communication detection refers to leak rate detection on the vacuum chamber composed of the chambers and the transfer platform in communication. When communication detection is needed, the master chamber and the slave chamber of the master chamber for this time of communication detection can be determined from the transfer platform and the chambers. In an example, if the master chamber is the transfer platform, the slave chamber can be one or more chambers around the transfer platform. If the master chamber is one of the chambers, the slave chamber can be the transfer platform connected with the chamber. In an example, when the transfer platform has a high vacuum pump, a high vacuum valve and a high vacuum gauge, the transfer platform can be used as the master chamber for communication detection.

[0060] In the embodiments of the present application, the transfer platform and the chambers have independent vacuum systems, and the transfer platform and the chambers can also be configured with slave vacuum systems. In an example, the vacuum system of the transfer platform or the chamber itself can be referred to as MasterVacumn, and the configured slave vacuum system can be referred to as SlaveVacuum. Since the transfer platform in the Cluster type semiconductor process equipment is separated from other chambers by a slit valve, the transfer platform can be in communication with other chambers after the slit valve is opened, and other chambers cannot be in communication with each other, so the transfer platform can be mainly used as the master chamber for the Cluster type semiconductor process equipment, and the SlaveVacuum is configured for the transfer platform. The vacuum system of each chamber can be used as the SlaveVacuum of the transfer platform, and the specific parameters that can be transmitted include three items: the name of the master chamber, the name of the slave vacuum system and the valve between the two, for example, the valve between the transfer platform and the chamber can be set as Figure 1The vacuum system of the chamber named Ch1 is SlaveVacuum of the transfer platform, and the following parameters are transmitted to MasterVacumn of the transfer platform: Transfer, / Control / Ch1Exports / Vacuum, / Control / Ch1Exports / SlotValve, in sequence of the master chamber name, the slave vacuum system name, and the name of the Slit valve isolating the two.

[0061] In step 402, the leak rate of the vacuum chamber composed of the master chamber and the slave chamber is detected.

[0062] In the embodiment of the present application, after the master chamber and the corresponding slave chamber are determined, the master chamber and the slave chamber are communicated, and the leak rate of the vacuum chamber composed of the communicated master chamber and slave chamber is detected.

[0063] In summary, in the embodiment of the present application, the transfer platform and the chambers in the cluster-type semiconductor process equipment can be combined into a vacuum chamber, and the leak rate of the whole vacuum chamber can be detected. By using this method, whether the chambers and the platform in the semiconductor process equipment are connected with air leakage can be detected.

[0064] Referring to Figure 5 , a step flow chart of another chamber leak rate detection method in the embodiment of the present application is shown, which is applied to a cluster-type semiconductor process equipment, wherein the cluster-type semiconductor process equipment includes a transfer platform and chambers around the transfer platform, the chambers are connected with the transfer platform through valves, and the chambers are independent of each other, and can specifically include the following steps:

[0065] In step 501, the transfer platform is determined as the master chamber, and at least one chamber is determined as the slave chamber.

[0066] In the embodiment of the present application, the transfer platform can be used as the master chamber, and at least one chamber can be used as the slave chamber.

[0067] The detection types of the leak rate include communication detection and single detection. The communication detection refers to the leak rate detection of the vacuum chamber composed of the communicated chamber and the transfer platform. The single detection refers to the leak rate detection of the vacuum chamber of the single chamber or the transfer platform. The user can perform a detection selection operation on the transfer platform or the chamber, the detection selection operation can be a touch operation or a voice operation, and the corresponding detection indication information is generated through the detection selection operation, which indicates the detection type of the leak rate detection and the specific detection object.

[0068] In step 501, at least one chamber is determined as the slave chamber, and the following sub-steps can be performed:

[0069] Sub-step S11, determine the value of the mark bit corresponding to each chamber.

[0070] Sub-step S12, determine the chamber with the mark bit value as the first value as the dependent chamber.

[0071] The value includes a first value and a second value, the first value indicates that the chamber is a dependent chamber, and the second value indicates that the chamber performs leak detection independently.

[0072] In the embodiment of the present application, a corresponding mark bit can be configured for each chamber. The value of the mark bit corresponding to each chamber is traversed, and whether the chamber corresponding to the mark bit is a dependent chamber is determined according to the value.

[0073] In an example, a transfer platform can be a master chamber, and chambers around the transfer platform can be dependent chambers. A mark bit can be set in each chamber. When the mark bit of one of the chambers is Yes (the first value), it indicates that the chamber needs to be communicated with the transfer platform to test the pressure rise rate. When the mark bit of one of the chambers is No (the second value), it indicates that the chamber uses its own independent vacuum system to test the pressure rise rate. Figure 1 As shown in the single-platform Cluster-type machine shown in FIG. 1, a mark bit named TransferRorVlvOpen is set in the chamber named Ch1. When the mark bit is Yes, it indicates that the Ch1 chamber needs to be communicated with the transfer platform TransferChamber to test the pressure rise rate. Clicking the test pressure rise rate button of the transfer platform can open the Slit valve between the Ch1 chamber and the transfer platform, and the change in the reading of the high vacuum gauge of the transfer platform can reflect the pressure rise rate of the transfer platform and the chamber. Clicking the test pressure rise rate button of the chamber will directly skip the test. When the mark bit is No, it indicates that the Ch1 chamber tests the pressure rise rate independently. At this time, if the TransferRorVlvOpen of other chambers is also No, clicking the test pressure rise rate button of the transfer platform will only test the pressure rise rate of the transfer platform itself. Clicking the test pressure rise rate button of the Ch1 chamber will close the Slit valve between the chamber and the transfer platform, and then test the pressure rise rate of the chamber itself. Similarly, the LoadLock chamber can also be a dependent chamber and be communicated with the transfer platform to test the pressure rise rate. A corresponding mark bit can be set in the corresponding LoadLock chamber.

[0074] In an embodiment of the present application, the number of mark bits corresponding to each chamber is the same as the number of transfer platforms connected to the chamber.

[0075] As shown in FIG. 1, Figure 2The double-platform Cluster-type machine shown in the figure, the PassThrough chamber is connected with the BufferChamber and the TransferChamber two transmission platforms, so the PassThrough chamber can have two mark bits, BufferRorVlvOpen and TransferRorVlvOpen, when BufferRorVlvOpen is Yes, it means that the chamber is connected with the BufferChamber platform to test the pressure rise rate, at this time, clicking the test pressure rise rate button of the BufferChamber platform can realize the communication test pressure rise rate of the two; when TransferRorVlvOpen is Yes, it means that the chamber is connected with the TransferChamber platform to test the pressure rise rate, clicking the test pressure rise rate button of the TransferChamber platform can realize the communication test pressure rise rate of the two. When the mark bit BufferRorVlvOpen and the mark bit TransferRorVlvOpen of the PassThrough chamber are Yes at the same time, the leakage rate detection needs to be carried out in steps, that is, the PassThrough chamber cannot open the Slit valve on both sides at the same time when the test pressure rise rate button of the BufferChamber platform and the test pressure rise rate button of the TransferChamber platform are clicked, and it cannot be detected as a subordinate chamber of the BufferChamber platform and a subordinate chamber of the TransferChamber platform at the same time, so that any test only has one main chamber, and the pressure change is measured by the vacuum gauge of the main chamber.

[0076] In addition, in addition to determining the main chamber and the subordinate chamber of the main chamber by the method in step 501, the following methods can also be used:

[0077] Determining one of the chambers as the main chamber and determining the transmission platform as the subordinate chamber of the main chamber.

[0078] In the embodiments of the present application, one of the chambers can also be used as the main chamber, and the transmission platform can be used as the subordinate chamber.

[0079] Specifically, determining one of the chambers as the main chamber can include the following sub-steps:

[0080] Sub-step S21, determining the value of all mark bits corresponding to the transmission platform.

[0081] Sub-step S22, determining the chamber corresponding to the mark bit with the third value as the main chamber.

[0082] The number of mark bits corresponding to the transfer platform is the same as the number of chambers connected to the transfer platform, and the mark bits correspond to the chambers one by one. The above values include third values and fourth values. The third values are used to indicate that the transfer platform is a dependent chamber of the chamber corresponding to the mark bit. The fourth values are used to indicate that the chamber corresponding to the mark bit is independently detected for the leakage rate.

[0083] In the embodiments of the present application, the transfer platform can also be configured with mark bits. The number of mark bits is the same as the number of chambers connected to the transfer platform. For example, for the TransferChamber transfer platform in Figure 1 , eight mark bits can be set, which correspond to the eight chambers connected to the transfer platform one by one. The values of the eight mark bits can be determined. If the values of two mark bits are both the third values, it can be determined that the chambers corresponding to the two mark bits can be used as the master chamber. It should be noted that only one master chamber can be used for communication detection at a time. Therefore, for the above two chambers, the leakage rate detection needs to be performed step by step as the master chamber.

[0084] In an example, by setting the mark bits, the chambers around the transfer platform can be flexibly set as the master chamber. For example, Figure 1 When the transfer platform is used as a dependent chamber of a chamber, the mark bits of the transfer platform can be eight, which are LARorVlvOpen, LBRorVlvOpen, Ch1RorVlvOpen, Ch2RorVlvOpen, Ch3RorVlvOpen, Ch4RorVlvOpen, Ch5RorVlvOpen, and Ch6RorVlvOpen. The transfer platform can only be used as a dependent chamber of a chamber at a time. When the values of the eight mark bits are two or more Yes, the leakage rate communication detection needs to be performed step by step.

[0085] Step 502, detecting the leakage rate of the vacuum cavity composed of the master chamber and the dependent chamber.

[0086] In the embodiments of the present application, after the master chamber and the dependent chamber are determined, the leakage rate of the vacuum cavity composed of the master chamber and the dependent chamber in communication can be detected, that is, the pressure rise rate of the vacuum cavity can be detected.

[0087] For step 502, the following sub-steps can be performed:

[0088] Sub-step S31, opening the valve between the master chamber and the dependent chamber to make the master chamber and the dependent chamber in communication.

[0089] Sub-step S32, using the vacuum system in the master chamber to detect the leakage rate of the vacuum cavity composed of the master chamber and the dependent chamber.

[0090] In the embodiment of the present application, the valve between the main chamber and the subordinate chamber can be opened to make the main chamber and the subordinate chamber communicate, and the vacuum system of the main chamber is used for detection. The vacuum system of the main chamber can include a high vacuum pump, a high vacuum valve and a high vacuum gauge.

[0091] In one embodiment of the present application, before the valve between the main chamber and the subordinate chamber is opened to make the main chamber and the subordinate chamber communicate, the following steps can be performed:

[0092] The main chamber and the subordinate chamber are respectively pumped to make the main chamber and the subordinate chamber respectively in a vacuum state.

[0093] In the embodiment of the present application, before the valve between the main chamber and the subordinate chamber is opened, the main chamber and the subordinate chamber can be respectively pumped.

[0094] In order to enable those skilled in the art to better understand the steps 501 to 502 of the embodiment of the present application, an example is given below, in which the transfer platform is used as the main chamber:

[0095] Referring to Figure 6 FIG. 1 is a flowchart of a chamber leak rate detection method according to an embodiment of the present application, in which the transfer platform in a Cluster type machine is used as the main chamber. The flowchart can include the following steps:

[0096] 1. When leak rate detection is needed, all the gas inlet valves, isolation valves and slit valves in the transfer platform can be closed.

[0097] 2. It is determined whether the pressure in the transfer platform is in a non-vacuum state. If the pressure is in a non-vacuum state, the coarse pumping valve is opened, the transfer platform is pumped to a vacuum state, and then the pumping valve is closed. If the pressure is not in a non-vacuum state, the next step is performed.

[0098] 3. It is determined whether the transfer platform is provided with a high vacuum pump. If the transfer platform is provided with a high vacuum pump, the valve of the high vacuum pump is opened, the transfer platform is continuously pumped to a high vacuum state, and then the valve of the high vacuum pump is closed. If the transfer platform is not provided with a high vacuum pump, the next step is performed.

[0099] 4. All the chambers connected to the transfer platform are traversed. If it is found that the flag bit of one or more chambers is YES, it is determined that the one or more chambers are subordinate chambers of the transfer platform for communication detection. The subordinate chamber can perform the following steps:

[0100] 1) It is determined whether the pressure in the chamber is in a non-vacuum state. If the pressure is in a non-vacuum state, the coarse pumping valve is opened, the chamber is pumped to a vacuum state, and then the pumping valve is closed. If the pressure is not in a non-vacuum state, the next step is performed.

[0101] 2) judge whether the chamber is configured with a high vacuum pump, if yes, open the valve of the high vacuum pump, continue to pump the chamber to a high vacuum state, and then close the high vacuum pump valve; if not, execute the next step;

[0102] 3) open the Slit valve between the chamber and the transfer platform, so that the transfer platform is in communication with the one or several chambers.

[0103] 5, wait for the pressure value displayed by the vacuum gauge in the transfer platform to be stable, and close the pumping valve of the transfer platform after it is stable, read the pressure value of the transfer platform from the vacuum gauge, and read the pressure value in the transfer platform again after a period of time, according to the two pressure values and the time difference, the pressure rise rate (pressure rise rate) can be calculated, that is, the leak rate of the vacuum chamber composed of the main chamber and the subordinate chamber connected.

[0104] In summary, in the embodiment of the present application, the transfer platform and the chamber in the cluster type semiconductor process equipment can be combined into a vacuum chamber, and the leak rate of the whole vacuum chamber can be detected. By using this method, whether the chamber and the platform of the semiconductor process equipment are connected can be detected. Through the improvement of the original test chamber leak rate method, based on the independent test of the pressure rise rate of the chamber and the platform, the pressure rise rate of the chamber and the platform is tested, which can accurately measure the leak rate of the chamber without a high vacuum pump, and can measure the sealing performance of the chamber and the platform connection, so that the machine leak rate test is more accurate. The chamber without a high vacuum pump can be flexibly configured as a subordinate chamber of the main chamber with a high vacuum pump, and the high vacuum pump and the high vacuum gauge of the main chamber are used to accurately measure the pressure rise rate. The present application can flexibly set the subordinate relationship of each chamber and the platform, and through the setting of the marker bit, the purpose of flexible combination is achieved when testing the pressure rise rate, and the pressure rise rate of multiple chambers is tested, and the accuracy of the machine test chamber leak rate is improved.

[0105] It should be noted that for the method embodiment, in order to simply describe, it is expressed as a series of action combinations, but those skilled in the art should know that the embodiment of the present application is not limited by the described action sequence, because according to the embodiment of the present application, certain steps can be performed in other order or simultaneously. Secondly, those skilled in the art should know that the embodiments described in the specification all belong to preferred embodiments, and the actions involved are not necessarily necessary for the embodiment of the present application.

[0106] Referring to Figure 7 , a structure block diagram of a cluster type semiconductor process equipment is shown, which includes a transfer platform and chambers around the transfer platform, the chambers are connected with the transfer platform through valves, and each chamber is independent of each other, the cluster type semiconductor process equipment 701 further comprises:

[0107] a controller 7011, configured to determine a master chamber and a slave chamber of the master chamber from the transfer platform and the chambers; and control a vacuum system in the master chamber to detect a leak rate of a vacuum cavity composed of the master chamber and the slave chamber.

[0108] In an optional embodiment of the present application, the controller is configured to determine the transfer platform as the master chamber and at least one of the chambers as the slave chamber.

[0109] In an optional embodiment of the present application, the controller is configured to determine values of all mark bits corresponding to the chambers, wherein the values include a first value and a second value, the first value is used to indicate that the chamber is the slave chamber, and the second value is used to indicate that the chamber performs leak rate detection independently; and determine the chamber with the mark bit having the first value as the slave chamber.

[0110] In an optional embodiment of the present application, the controller is configured to determine one of the chambers as the master chamber and the transfer platform as the slave chamber.

[0111] In an optional embodiment of the present application, the controller is configured to determine values of all mark bits corresponding to the transfer platform, wherein the number of the mark bits corresponding to the transfer platform is the same as the number of the chambers connected to the transfer platform, the mark bits correspond to the chambers one by one, and the values include a third value and a fourth value, the third value is used to indicate that the transfer platform is the slave chamber of the chamber corresponding to the mark bit, and the fourth value is used to indicate that the chamber corresponding to the mark bit performs leak rate detection independently; and determine the chamber corresponding to the mark bit with the third value as the master chamber.

[0112] In an optional embodiment of the present application, the controller is configured to control to open a valve between the master chamber and the slave chamber, so that the master chamber and the slave chamber are communicated.

[0113] In an optional embodiment of the present application, the controller is configured to control to perform pumping in the master chamber and the slave chamber respectively, so that the master chamber and the slave chamber are in vacuum state respectively.

[0114] In summary, in the embodiment of the present application, the transmission platform and the chamber in the cluster type semiconductor process equipment can be combined into a vacuum cavity, and the entire vacuum cavity can be subjected to leak rate detection. By using this method, whether the chamber and the platform of the semiconductor process equipment are connected with air leakage can be detected. By improving the original method for testing the leak rate of the chamber, on the basis of testing the pressure rise rate of the independent chamber and platform, the pressure rise rate of the chamber and platform in communication is tested, so that the leak rate of the chamber without a high vacuum pump can be accurately measured, and the sealing of the chamber and the platform connection can be measured, so that the machine leak rate test is more accurate. The chamber without a high vacuum pump can be flexibly configured as a dependent chamber of the main chamber with a high vacuum pump, and the high vacuum pump and the high vacuum gauge of the main chamber are used to accurately measure the pressure rise rate. The present application can flexibly set the dependency relationship of each chamber and platform, and when testing the pressure rise rate, the purpose of flexible combination is achieved through the setting of the marker bit, the coordinated testing of the pressure rise rate of multiple chambers is realized, and the accuracy of the machine test chamber leak rate is improved.

[0115] For the device embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts refer to the part of the method embodiment.

[0116] The embodiment of the present application also provides an electronic device, which comprises a processor, a memory and a computer program stored in the memory and capable of running on the processor, when the computer program is executed by the processor, each process of the above-mentioned chamber leak rate detection method embodiment is realized, and the same technical effect is achieved, to avoid repetition, which will not be repeated here.

[0117] The embodiment of the present application also provides a computer readable storage medium, and a computer program is stored in the computer readable storage medium, when the computer program is executed by the processor, each process of the above-mentioned chamber leak rate detection method embodiment is realized, and the same technical effect is achieved, to avoid repetition, which will not be repeated here.

[0118] For the device embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts refer to the part of the method embodiment.

[0119] Each embodiment in the specification is described in a progressive manner, and each embodiment focuses on the difference from other embodiments, and the same and similar parts of each embodiment can be referred to each other.

[0120] Those skilled in the art will appreciate that embodiments of the present application can be readily used as a method, apparatus, or computer program product. Accordingly, embodiments of the present application can take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, embodiments of the present application can take the form of a computer program product on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROMs, optical storage devices, and the like) embodying computer program instructions.

[0121] Embodiments of the present application are described herein with reference to the drawings, which are as follows: Figure 1 Figure 1

[0122] These computer program instructions can also be stored in a computer- readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instructions which implement the Figure 1 Figure 1

[0123] These computer program instructions can also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer-implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the Figure 1 Figure 1

[0124] Although preferred embodiments of the present application have been described herein, those skilled in the art will readily appreciate that further modifications and changes can be made to these embodiments without departing from the scope of the present application. Accordingly, it is intended that the appended claims be interpreted as including all such modifications and changes as fall within the scope of the present application.

[0125] ​​​​​​Finally, it is to be understood that the phraseology or terminology such as "first" and "second" etc. used herein is merely intended to differentiate one entity or operation from another entity or operation, without necessarily requiring or implying any actual such relationship or order between such entities or operations. Moreover, the terms "comprising", "including", or any other closure, are intended to cover the non-exclusive inclusion such that a process, method, article, or apparatus that comprises a list of elements does not include those elements alone but can include other elements not expressly listed or even include elements inherent in such process, method, article, or apparatus. Without more limitations, the element defined by the statement "comprising a" does not exclude the presence of additional identical elements in the process, method, article, or apparatus that includes the element.

[0126] The chamber leakage detection method and the cluster type semiconductor process equipment provided by the present application are described in detail above, and the principles and implementation manners of the present application are described by applying specific examples in this paper. The above description of the embodiments is only used to help understand the method of the present application and its core idea. Meanwhile, for those skilled in the art, according to the idea of the present application, the specific implementation manner and application range will be changed, and the above description should not be understood as a limitation of the present application.

Claims

1. A method for detecting chamber leak rate, characterized in that, An application to clustered semiconductor process equipment, the clustered semiconductor process equipment including a transport platform and chambers located around the transport platform, the chambers being connected to the transport platform via valves, and each chamber being independent of the others, the method comprising: A main chamber and a subordinate chamber of the main chamber are determined from the transmission platform and the chamber; The leakage rate of the vacuum chamber composed of the main chamber and the subordinate chamber is detected. The leakage rate is determined based on evacuating the transmission platform and the subordinate chamber respectively. After the transmission platform and the subordinate chamber are in a vacuum state, the valve between the subordinate chamber and the transmission platform is opened to connect the transmission platform and the subordinate chamber to form the vacuum chamber. The vacuum chamber is then tested under stable pressure. The step of determining a main chamber and a subordinate chamber of the main chamber from the transmission platform and the chamber includes: The transmission platform is designated as the main chamber, and at least one of the chambers is designated as the subordinate chambers. The subordinate chambers are determined based on the values ​​of preset marker bits. The values ​​include a first value and a second value. The first value indicates that the chamber needs to be connected to the transmission platform to test the pressure rise rate, and the second value indicates that the chamber uses its own independent vacuum system to test the pressure rise rate.

2. The method according to claim 1, characterized in that, The step of identifying at least one of the chambers as the subordinate chamber includes: Determine the values ​​of the marker bits corresponding to all the chambers, wherein the values ​​include a first value and a second value, the first value is used to indicate that the chamber is the subordinate chamber, and the second value is used to indicate that the chamber performs leak rate detection independently; The chamber whose flag value is the first value is identified as the subordinate chamber.

3. The method according to claim 1, characterized in that, The step of determining a main chamber and a subordinate chamber of the main chamber from the transmission platform and the chamber includes: One of the chambers is designated as the main chamber, and the transmission platform is designated as the subordinate chamber.

4. The method according to claim 3, characterized in that, The step of designating one of the chambers as the main chamber includes: The values ​​of all the flag bits corresponding to the transmission platform are determined, wherein the number of the flag bits corresponding to the transmission platform is the same as the number of the chambers connected to the transmission platform, the flag bits correspond one-to-one with the chambers, and the values ​​include a third value and a fourth value. The third value is used to indicate that the transmission platform is the subordinate chamber of the chamber corresponding to the flag bit, and the fourth value is used to indicate that the chamber corresponding to the flag bit performs leak rate detection independently. The chamber corresponding to the marker bit with the value of the third value is determined as the main chamber.

5. The method according to claim 1, characterized in that, The detection of the leak rate of the vacuum cavity composed of the main chamber and the subordinate chamber includes: Open the valve between the main chamber and the subordinate chamber to connect the main chamber and the subordinate chamber; The leakage rate of the vacuum cavity, which consists of the main chamber and the subordinate chamber, is detected using the vacuum system in the main chamber.

6. The method according to claim 5, characterized in that, Before opening the valve between the main chamber and the subordinate chamber to connect the main chamber and the subordinate chamber, the method further includes: Air is evacuated from both the main chamber and the subordinate chamber to create a vacuum in both chambers.

7. A clustered semiconductor process apparatus, characterized in that, The clustered semiconductor process equipment includes a transfer platform and chambers surrounding the transfer platform, the chambers being connected to the transfer platform via valves, and each chamber being independent of the others. A controller is configured to determine a main chamber and a subordinate chamber of the main chamber from the transmission platform and the chamber; control the vacuum system in the main chamber to detect the leakage rate of the vacuum cavity composed of the main chamber and the subordinate chamber; the leakage rate is determined based on evacuating the transmission platform and the subordinate chamber respectively, opening the valve between the subordinate chamber and the transmission platform after the transmission platform and the subordinate chamber are in a vacuum state, so that the transmission platform and the subordinate chamber are connected to form the vacuum cavity, and detecting the vacuum cavity when the pressure of the vacuum cavity is stable; The controller is used to identify the transmission platform as the main chamber and at least one of the chambers as the subordinate chambers. The subordinate chambers are determined based on the values ​​of preset flag bits. The values ​​include a first value and a second value. The first value indicates that the chamber needs to be connected to the transmission platform to test the pressure rise rate, and the second value indicates that the chamber uses its own independent vacuum system to test the pressure rise rate.

8. The clustered semiconductor process equipment according to claim 7, characterized in that, The controller is used to identify one of the chambers as the master chamber and the transmission platform as the slave chamber.

Images