A level shift structure for a super large array ultra-low temperature infrared image sensor

Abstract

This invention discloses a level shifting structure for an ultra-large area array ultra-low temperature infrared image sensor, comprising a conversion signal input transistor; a level clamping transistor whose gate receives a level VREF, and whose source is connected to the source of a feedback transistor, the gate of an inverting N-transistor, and the gate of an inverting P-transistor; the drain of the level clamping transistor connected to the source of the conversion signal input transistor; the drain of the conversion signal input transistor grounded; the gate of the conversion signal input transistor connected to IP; the drain of the feedback transistor connected to the source of a pull-up transistor, whose gate is connected to IP, and whose drain is connected to power supply VDD; the source of the inverting P-transistor connected to power supply VDD, whose drain is connected to the source of the inverting N-transistor, and whose drain is grounded; and a level VREF generated by a level VREF clamping matching voltage generation circuit. This ensures that the source-drain voltage of the conversion signal input transistor (low threshold transistor) does not exceed 1.2V, ensuring that the device operates within its normal voltage range and avoiding the risk of breakdown.

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