Method for improving etch stability after etch chamber maintenance

By calculating the etching rate change after etching chamber maintenance, compensation parameters were obtained, and the production silicon wafer menu was adjusted, solving the scrap problem caused by unstable etching depth and achieving stability of etching depth and improvement of product quality.

CN115714097BActive Publication Date: 2026-05-26SHANGHAI HUALI INTEGRATED CIRCUIT CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SHANGHAI HUALI INTEGRATED CIRCUIT CORP
Filing Date
2022-10-28
Publication Date
2026-05-26

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Abstract

This invention provides a method for improving etching stability after etch chamber maintenance. It provides a non-production silicon wafer and an etching machine. An oxide film is formed on the non-production silicon wafer. The etching machine before and after maintenance is used to etch the oxide film and obtain its etching rate. The slope value of ΔDepth / ΔER is obtained. ΔER and the slope value of ΔDepth / ΔER are obtained based on the change in etching parameter rate of the trench oxide film on both non-production silicon wafers. ΔDepth is obtained based on ΔER and the slope value of ΔDepth / ΔER. An etching rate compensation parameter corresponding to ΔDepth is obtained based on the etching rate of the trench oxide film. The etching rate compensation parameter is used to adjust the menu of the production silicon wafer. This invention can prevent depth instability caused by changes in the cavity environment during routine maintenance, which could lead to deviations from product control lines and scrapping.
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