A display negative filter and a method of manufacturing the same

Abstract

The application discloses a negative filter for display and a manufacturing method thereof, and belongs to the technical field of optical part film manufacturing; the film system structure of the negative filter is Sub|(LH)^8L, wherein, Sub is a substrate, H is a M3 film layer, and L is a SiO2 film layer. The negative filter manufactured by adopting the film system structure and the manufacturing method realizes reflection on a central wavelength of 578nm, transmits light with a wavelength of 400nm-520nm and 650nm-750nm, and the transmittance and reflectance indexes satisfy: 1) R=50+ / -1%@578nm; 2) T>=90%@400nm-520nm&&650nm-750nm; and 3) the environmental adaptability of the film layer satisfies the national military standard of optical film. The film system structure is simple, the number of layers is small, and the film layer prepared has the advantages of high mechanical strength, good internal stress matching, strong bonding performance with the substrate and the like, and can be used in a complex environment.

Description

Technical Field

[0001] This invention belongs to the field of thin film manufacturing technology for optical components, and specifically relates to a negative filter for display and its manufacturing method. Background Technology

[0002] From the perspective of optical thin films, negative filters exhibit high reflectivity in a specific wavelength band while maintaining high transmittance in other bands. They are primarily used in helmet-mounted display systems and vehicle head-up displays (HUDs), where displayed information is superimposed onto the external background to enhance display functionality. The film structure and deposition methods of negative filters are complex, making them a key focus of current optical thin film research.

[0003] Existing technologies include coating materials Al2O3 and SiO2, with 35 film layers, which are bonded together; and coating materials M2 and SiO2, with 52 film layers, used for resin substrates. Neither of these can be used on Sub substrates, and the large number of layers makes the processing complex and the bonding performance poor. Summary of the Invention

[0004] The technical problem to be solved:

[0005] To overcome the shortcomings of existing technologies, this invention provides a negative filter for display and its fabrication method. The film structure of the negative filter is Sub|(LH)^8L, where Sub is the substrate, H is an M3 film layer, and L is a SiO2 film layer. The film structure designed using this invention is simple and easy to prepare; moreover, the prepared film layer has advantages such as high mechanical strength, good internal stress matching, and strong adhesion to the substrate.

[0006] The technical solution of the present invention is: a negative filter for display, wherein the film structure of the negative filter is as follows:

[0007] Sub|(LH)^8L

[0008] Wherein, Sub is the substrate, H is the M3 film, and L is the SiO2 film.

[0009] A further technical solution of the present invention is that the substrate is K9 glass or PC.

[0010] A further technical solution of the present invention is as follows: In the film system (LH)^8L of the negative filter, the film layer adjacent to the substrate is the first layer, and the outermost layer is the 17th layer. The geometric thickness values ​​of the first to 17th layers are: the first layer 160nm~170nm, the second layer 10nm~15nm, the third layer 120nm~130nm, the fourth layer 5nm~10nm, the fifth layer 170nm~180nm, the sixth layer 70nm~80nm, and the seventh layer 150nm~170nm~180nm. Layer 160nm, 8th layer 30nm-36nm, 9th layer 125nm-135nm, 10th layer 18nm-25nm, 11th layer 145nm-155nm, 12th layer 80nm-90nm, 13th layer 95nm-105nm, 14th layer 105nm-115nm, 15th layer 240nm-250nm, 16th layer 40nm-50nm, 17th layer 80nm-90nm.

[0011] A method for preparing a negative filter, the specific steps of which are as follows:

[0012] 1) Clean the substrate and bombard it with an ion source for 5-8 minutes;

[0013] 2) Evacuate to 1×10 -3 Pa;

[0014] 3) The first film layer is deposited using SiO2 film material through vapor deposition. The vacuum chamber pressure during vapor deposition is 1×10⁻⁶. -2 Pa, evaporation rate of 0.8 nm / s, film thickness monitored by crystal oscillator method, thickness of 160 nm to 170 nm;

[0015] 4) Deposit the second film layer using M3 film material via vapor deposition. The vacuum chamber pressure during vapor deposition is 5 × 10⁻⁶. -3 Pa, evaporation rate of 0.3 nm / s, film thickness monitored by crystal oscillator method, thickness of 10 nm to 15 nm;

[0016] 5) The third film layer is deposited using SiO2 film material by vapor deposition. The vacuum chamber pressure during vapor deposition is 1×10⁻⁶. -2 Pa, evaporation rate of 0.8 nm / s, film thickness monitored by crystal oscillator method, thickness of 120 nm to 130 nm;

[0017] 6) Deposit the fourth film layer using M3 film material via vapor deposition. The vacuum chamber pressure during vapor deposition is 5 × 10⁻⁶. -3 Pa, evaporation rate of 0.3 nm / s, film thickness monitored by crystal oscillator method, thickness of 5 nm to 10 nm;

[0018] 7) The fifth film layer is deposited using SiO2 film material by vapor deposition. The vacuum chamber pressure during vapor deposition is 1×10⁻⁶. -2Pa, evaporation rate of 0.8 nm / s, film thickness monitored by crystal oscillator method, thickness of 170 nm to 180 nm;

[0019] 8) Deposit the 6th film layer using M3 film material via vapor deposition. The vacuum chamber pressure during vapor deposition is 5 × 10⁻⁶. -3 Pa, evaporation rate of 0.3 nm / s, film thickness monitored by crystal oscillator method, thickness of 70 nm to 80 nm;

[0020] 9) The 7th film layer is deposited by vapor deposition using SiO2 film material. The vacuum chamber pressure during vapor deposition is 1×10⁻⁶. -2 Pa, evaporation rate of 0.8 nm / s, film thickness monitored by crystal oscillator method, thickness of 150 nm to 160 nm;

[0021] 10) To deposit the 8th film layer, use M3 film material for vapor deposition. The vacuum chamber pressure during vapor deposition is 5×10⁻⁶. -3 Pa, evaporation rate of 0.3 nm / s, film thickness monitored by crystal oscillator method, thickness of 30 nm to 36 nm;

[0022] 11) The 9th film layer is deposited by vapor deposition using SiO2 film material. The vacuum chamber pressure during vapor deposition is 1×10⁻⁶. -2 Pa, evaporation rate of 0.8 nm / s, film thickness monitored by crystal oscillator method, thickness of 125 nm to 135 nm;

[0023] 12) To deposit the 10th film layer, use M3 film material for vapor deposition. The vacuum chamber pressure during vapor deposition is 5 × 10⁻⁶. -3 Pa, evaporation rate of 0.3 nm / s, film thickness monitored by crystal oscillator method, thickness of 18 nm to 25 nm;

[0024] 13) The 11th film layer is deposited by vapor deposition using SiO2 film material. The vacuum chamber pressure during vapor deposition is 1×10⁻⁶. -2 Pa, evaporation rate of 0.8 nm / s, film thickness monitored by crystal oscillator method, thickness of 145 nm to 155 nm;

[0025] 14) To deposit the 12th film layer, use M3 film material for vapor deposition. The vacuum chamber pressure during vapor deposition is 5 × 10⁻⁶. -3 Pa, evaporation rate of 0.3 nm / s, film thickness monitored by crystal oscillator method, thickness of 80 nm to 90 nm;

[0026] 15) The 13th film layer is deposited using SiO2 film material by vapor deposition. The vacuum chamber pressure during vapor deposition is 1×10⁻⁶. -2 Pa, evaporation rate of 0.8 nm / s, film thickness monitored by crystal oscillator method, thickness of 95 nm to 105 nm;

[0027] 16) To deposit the 14th film layer, M3 film material was used for vapor deposition. The vacuum chamber pressure during vapor deposition was 5 × 10⁻⁶. -3 Pa, evaporation rate of 0.3 nm / s, film thickness monitored by crystal oscillator method, thickness of 105 nm to 115 nm;

[0028] 17) The 15th film layer is deposited using SiO2 film material by vapor deposition. The vacuum chamber pressure during vapor deposition is 1×10⁻⁶. -2 Pa, evaporation rate of 0.8 nm / s, film thickness monitored by crystal oscillator method, thickness of 240 nm to 250 nm;

[0029] 18) To deposit the 16th film layer, M3 film material was used for vapor deposition. The vacuum chamber pressure during vapor deposition was 5 × 10⁻⁶. -3 Pa, evaporation rate of 0.3 nm / s, film thickness monitored by crystal oscillator method, thickness of 40 nm to 50 nm;

[0030] 19) The 17th film layer was deposited using SiO2 film material by vapor deposition. The vacuum chamber pressure during vapor deposition was 1×10⁻⁶. -2 Pa, evaporation rate of 0.8 nm / s, film thickness monitored by crystal oscillator method, thickness of 80 nm to 90 nm;

[0031] 20) After the vacuum chamber is cooled to room temperature, the optical component coated with the negative filter film system is taken out. The optical component is an optical component with Sub|(LH)^8L film system, where Sub represents the substrate.

[0032] Beneficial effects

[0033] The beneficial effects of this invention are as follows: the negative filter fabricated using the film structure and preparation method of this invention achieves reflection at a center wavelength of 578nm and transmission at 400nm-520nm and 650nm-750nm, satisfying the following transmittance and reflectance requirements:

[0034] 1) R = 50 ± 1% @ 578 nm;

[0035] 2)T≥90%@400nm~520nm&&650nm~750nm;

[0036] 3) The environmental adaptability of the film layer meets the national military standards for optical thin films.

[0037] The membrane system of this invention has a simple structure and few layers. The prepared membrane has advantages such as high mechanical strength, good internal stress matching, and strong adhesion to the substrate, and can be used in complex environments. Attached Figure Description

[0038] Figure 1 This is the measured spectral curve. Detailed Implementation

[0039] The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain the invention, and should not be construed as limiting the invention.

[0040] The film structure of a negative filter for display in this embodiment is as follows:

[0041] Sub|(LH)^8L

[0042] Wherein, Sub is the substrate, H is the M3 film layer, and L is the SiO2 film layer. The substrate is K9 glass or PC.

[0043] In the negative filter film system (LH)^8L, the film layer adjacent to the substrate is the first layer, and the outermost layer is the 17th layer. The geometric thicknesses of the first to 17th layers are as follows: layer 1: 160nm-170nm, layer 2: 10nm-15nm, layer 3: 120nm-130nm, layer 4: 5nm-10nm, layer 5: 170nm-180nm, layer 6: 70nm-80nm, layer 7: 150nm-160nm. m, layer 8 30nm~36nm, layer 9 125nm~135nm, layer 10 18nm~25nm, layer 11 145nm~155nm, layer 12 80nm~90nm, layer 13 95nm~105nm, layer 14 105nm~115nm, layer 15 240nm~250nm, layer 16 40nm~50nm, layer 17 80nm~90nm.

[0044] This embodiment describes the preparation method of the K9 substrate negative filter film:

[0045] 1) Clean the substrate and bombard it with an ion source for 6 minutes;

[0046] 2) Evacuate to 1×10 -3 Pa;

[0047] 3) The first film layer is deposited using SiO2 film material through vapor deposition. The vacuum chamber pressure during vapor deposition is 1×10⁻⁶. -2 Pa, evaporation rate of 0.8 nm / s, film thickness monitored by crystal oscillator method, thickness of 165 nm;

[0048] 4) Deposit the second film layer using M3 film material via vapor deposition. The vacuum chamber pressure during vapor deposition is 5 × 10⁻⁶. -3 Pa, evaporation rate of 0.3 nm / s, film thickness monitored by crystal oscillator method, thickness of 112 nm;

[0049] 5) The third film layer is deposited using SiO2 film material by vapor deposition. The vacuum chamber pressure during vapor deposition is 1×10⁻⁶. -2 Pa, evaporation rate of 0.8 nm / s, film thickness monitored by crystal oscillator method, thickness of 125 nm;

[0050] 6) Deposit the fourth film layer using M3 film material via vapor deposition. The vacuum chamber pressure during vapor deposition is 5 × 10⁻⁶. -3 Pa, evaporation rate of 0.3 nm / s, film thickness monitored by crystal oscillator method, thickness of 8 nm;

[0051] 7) The fifth film layer is deposited using SiO2 film material by vapor deposition. The vacuum chamber pressure during vapor deposition is 1×10⁻⁶. -2 Pa, evaporation rate of 0.8 nm / s, film thickness monitored by crystal oscillator method, thickness of 175 nm;

[0052] 8) Deposit the 6th film layer using M3 film material via vapor deposition. The vacuum chamber pressure during vapor deposition is 5 × 10⁻⁶. -3 Pa, evaporation rate of 0.3 nm / s, film thickness monitored by crystal oscillator method, thickness of 75 nm;

[0053] 9) The 7th film layer is deposited by vapor deposition using SiO2 film material. The vacuum chamber pressure during vapor deposition is 1×10⁻⁶. -2 Pa, evaporation rate of 0.8 nm / s, film thickness monitored by crystal oscillator method, thickness of 155 nm;

[0054] 10) To deposit the 8th film layer, use M3 film material for vapor deposition. The vacuum chamber pressure during vapor deposition is 5×10⁻⁶. -3 Pa, evaporation rate of 0.3 nm / s, film thickness monitored by crystal oscillator method, thickness of 32 nm;

[0055] 11) The 9th film layer is deposited by vapor deposition using SiO2 film material. The vacuum chamber pressure during vapor deposition is 1×10⁻⁶. -2 Pa, evaporation rate of 0.8 nm / s, film thickness monitored by crystal oscillator method, thickness of 130 nm;

[0056] 12) To deposit the 10th film layer, use M3 film material for vapor deposition. The vacuum chamber pressure during vapor deposition is 5 × 10⁻⁶. -3 Pa, evaporation rate of 0.3 nm / s, film thickness monitored by crystal oscillator method, thickness of 20 nm;

[0057] 13) The 11th film layer is deposited by vapor deposition using SiO2 film material. The vacuum chamber pressure during vapor deposition is 1×10⁻⁶. -2 Pa, evaporation rate of 0.8 nm / s, film thickness monitored by crystal oscillator method, thickness of 150 nm;

[0058] 14) To deposit the 12th film layer, use M3 film material for vapor deposition. The vacuum chamber pressure during vapor deposition is 5 × 10⁻⁶. -3 Pa, evaporation rate of 0.3 nm / s, film thickness monitored by crystal oscillator method, thickness of 80 nm to 90 nm;

[0059] 15) The 13th film layer is deposited using SiO2 film material by vapor deposition. The vacuum chamber pressure during vapor deposition is 1×10⁻⁶. -2 Pa, evaporation rate of 0.8 nm / s, film thickness monitored by crystal oscillator method, thickness of 100 nm;

[0060] 16) To deposit the 14th film layer, M3 film material was used for vapor deposition. The vacuum chamber pressure during vapor deposition was 5 × 10⁻⁶. -3 Pa, evaporation rate of 0.3 nm / s, film thickness monitored by crystal oscillator method, thickness of 110 nm;

[0061] 17) The 15th film layer is deposited using SiO2 film material by vapor deposition. The vacuum chamber pressure during vapor deposition is 1×10⁻⁶. -2 Pa, evaporation rate of 0.8 nm / s, film thickness monitored by crystal oscillator method, thickness of 245 nm;

[0062] 18) To deposit the 16th film layer, M3 film material was used for vapor deposition. The vacuum chamber pressure during vapor deposition was 5 × 10⁻⁶. -3 Pa, evaporation rate of 0.3 nm / s, film thickness monitored by crystal oscillator method, thickness of 45 nm;

[0063] 19) The 17th film layer was deposited using SiO2 film material by vapor deposition. The vacuum chamber pressure during vapor deposition was 1×10⁻⁶. -2 Pa, evaporation rate of 0.8 nm / s, film thickness monitored by crystal oscillator method, thickness of 85 nm;

[0064] 20) After the vacuum chamber is cooled to room temperature, the optical component coated with the negative filter film system is taken out. The optical component is an optical component with Sub|(LH)^8L film system, where Sub represents the substrate.

[0065] The negative filter fabricated using the film structure and preparation method of this invention achieves reflection at a center wavelength of 578nm and transmission at 400nm–520nm and 650nm–750nm, satisfying the following transmittance and reflectance requirements:

[0066] 1) R = 49.229% @ 578nm;

[0067] 2)T=93.4%@400nm~520nm&&650nm~750nm;

[0068] The environmental adaptability of the film meets the national military standards for optical thin films.

[0069] Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present invention without departing from the principles and spirit of the present invention.

Claims

1. A method for preparing a negative filter for display, characterized in that: The film structure of the negative filter is as follows: Sub|(LH) ^8 L Wherein, Sub is the substrate, H is the M3 film, and L is the SiO2 film; Optical performance requirements: reflectivity of 50±1% at the center wavelength of 578nm, and average transmittance ≥90% in the 400-520nm and 650-750nm bands; The specific steps of the preparation method are as follows: 1) Clean the substrate and bombard it with an ion source for 5-8 minutes; 2) Evacuate to 1×10 -3 Pa; 3) The first film layer is deposited using SiO2 film material through vapor deposition. The vacuum chamber pressure during vapor deposition is 1×10⁻⁶. -2 Pa, evaporation rate of 0.8 nm / s, film thickness monitored by crystal oscillator method, thickness of 160 nm to 170 nm; 4) Deposit the second film layer using M3 film material via vapor deposition. The vacuum chamber pressure during vapor deposition is 5 × 10⁻⁶. -3 Pa, evaporation rate of 0.3 nm / s, film thickness monitored by crystal oscillator method, thickness of 10 nm to 15 nm; 5) The third film layer is deposited using SiO2 film material by vapor deposition. The vacuum chamber pressure during vapor deposition is 1×10⁻⁶. -2 Pa, evaporation rate of 0.8 nm / s, film thickness monitored by crystal oscillator method, thickness of 120 nm to 130 nm; 6) Deposit the fourth film layer using M3 film material via vapor deposition. The vacuum chamber pressure during vapor deposition is 5 × 10⁻⁶. -3 Pa, evaporation rate of 0.3 nm / s, film thickness monitored by crystal oscillator method, thickness of 5 nm to 10 nm; 7) The fifth film layer is deposited using SiO2 film material by vapor deposition. The vacuum chamber pressure during vapor deposition is 1×10⁻⁶. -2 Pa, evaporation rate of 0.8 nm / s, film thickness monitored by crystal oscillator method, thickness of 170 nm to 180 nm; 8) Deposit the 6th film layer using M3 film material via vapor deposition. The vacuum chamber pressure during vapor deposition is 5 × 10⁻⁶. -3 Pa, evaporation rate of 0.3 nm / s, film thickness monitored by crystal oscillator method, thickness of 70 nm to 80 nm; 9) The 7th film layer is deposited by vapor deposition using SiO2 film material. The vacuum chamber pressure during vapor deposition is 1×10⁻⁶. -2 Pa, evaporation rate of 0.8 nm / s, film thickness monitored by crystal oscillator method, thickness of 150 nm to 160 nm; 10) To deposit the 8th film layer, use M3 film material for vapor deposition. The vacuum chamber pressure during vapor deposition is 5×10⁻⁶. -3 Pa, evaporation rate of 0.3 nm / s, film thickness monitored by crystal oscillator method, thickness of 30 nm to 36 nm; 11) The 9th film layer is deposited by vapor deposition using SiO2 film material. The vacuum chamber pressure during vapor deposition is 1×10⁻⁶. -2 Pa, evaporation rate of 0.8 nm / s, film thickness monitored by crystal oscillator method, thickness of 125 nm to 135 nm; 12) To deposit the 10th film layer, use M3 film material for vapor deposition. The vacuum chamber pressure during vapor deposition is 5 × 10⁻⁶. -3 Pa, evaporation rate of 0.3 nm / s, film thickness monitored by crystal oscillator method, thickness of 18 nm to 25 nm; 13) The 11th film layer is deposited by vapor deposition using SiO2 film material. The vacuum chamber pressure during vapor deposition is 1×10⁻⁶. -2 Pa, evaporation rate of 0.8 nm / s, film thickness monitored by crystal oscillator method, thickness of 145 nm to 155 nm; 14) To deposit the 12th film layer, use M3 film material for vapor deposition. The vacuum chamber pressure during vapor deposition is 5 × 10⁻⁶. -3 Pa, evaporation rate of 0.3 nm / s, film thickness monitored by crystal oscillator method, thickness of 80 nm to 90 nm; 15) The 13th film layer is deposited using SiO2 film material by vapor deposition. The vacuum chamber pressure during vapor deposition is 1×10⁻⁶. -2 Pa, evaporation rate of 0.8 nm / s, film thickness monitored by crystal oscillator method, thickness of 95 nm to 105 nm; 16) To deposit the 14th film layer, M3 film material was used for vapor deposition. The vacuum chamber pressure during vapor deposition was 5 × 10⁻⁶. -3 Pa, evaporation rate of 0.3 nm / s, film thickness monitored by crystal oscillator method, thickness of 105 nm to 115 nm; 17) The 15th film layer is deposited using SiO2 film material by vapor deposition. The vacuum chamber pressure during vapor deposition is 1×10⁻⁶. -2 Pa, evaporation rate of 0.8 nm / s, film thickness monitored by crystal oscillator method, thickness of 240 nm to 250 nm; 18) To deposit the 16th film layer, M3 film material was used for vapor deposition. The vacuum chamber pressure during vapor deposition was 5 × 10⁻⁶. -3 Pa, evaporation rate of 0.3 nm / s, film thickness monitored by crystal oscillator method, thickness of 40 nm to 50 nm; 19) The 17th film layer was deposited using SiO2 film material by vapor deposition. The vacuum chamber pressure during vapor deposition was 1×10⁻⁶. -2 Pa, evaporation rate of 0.8 nm / s, film thickness monitored by crystal oscillator method, thickness of 80 nm to 90 nm; After the vacuum chamber is cooled to room temperature, the optical component coated with the negative filter film system is taken out. The optical component is an optical component with the Sub|(LH)^8L film system, where Sub represents the substrate.

2. The method for preparing a negative filter for display according to claim 1, characterized in that: The substrate is K9 glass or PC.

3. The method for preparing a negative filter for display according to claim 1, characterized in that: In the film system (LH) ^8 L of the negative filter, the layer adjacent to the substrate is layer 1, and the outermost layer is layer 17. The geometric thicknesses of layers 1 to 17 are as follows: layer 1: 160 nm to 170 nm; layer 2: 10 nm to 15 nm; layer 3: 120 nm to 130 nm; layer 4: 5 nm to 10 nm; layer 5: 170 nm to 180 nm; layer 6: 70 nm to 80 nm; layer 7: 150 nm to 160 nm; layer 8: 30 nm to 36 nm; layer 9: 125 nm to 135 nm; layer 10: 18 nm to 25 nm; layer 11: 145 nm to 155 nm; layer 12: 80 nm to 90 nm; layer 13: 95 nm to 105 nm; layer 14: 105 nm to 115 nm; layer 15: 240 nm to 250 nm; layer 16: 40 nm to 170 nm. nm to 50 nm, and the 17th layer has 80 nm to 90 nm.

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