System and method for plasma enhanced atomic layer deposition with a protective grid

Abstract

The present disclosure relates to a system and method for plasma-enhanced atomic layer deposition (PEALD) with a protective grid. The plasma-enhanced atomic layer deposition (PEALD) system includes a process chamber. A target substrate is supported within the process chamber. A grid is positioned above the target substrate within the process chamber. The grid includes a plurality of holes extending from a first side of the grid to a second side of the grid. During the PEALD process, a plasma generator generates plasma. Before the plasma reacts with the target substrate, the energy of the plasma is reduced by passing the plasma through the holes in the grid.

Description

Technical Field

[0001] The present disclosure generally relates to systems and methods for plasma enhanced atomic layer deposition with a guard grid. Background Art

[0002] There is a continuing demand for increased computing power in electronic devices, including smartphones, tablets, desktop computers, laptops, and many other types of electronic devices. One approach to increasing computing power in integrated circuits is to increase the number of transistors and other integrated circuit features contained within a given area of ​​substrate.

[0003] To continue reducing the feature size in integrated circuits, various thin film deposition, etching, and other process technologies have been implemented. These techniques can form very small features. However, there are many difficulties in ensuring high performance of devices and features.

[0004] Plasma-assisted deposition and etching techniques can be used to define small features in integrated circuits. However, ensuring that the target substrate is not accidentally damaged when performing plasma-assisted deposition or etching techniques presents challenges. Some unconventional substrates, such as carbon nanotube substrates, can be particularly susceptible to damage during plasma-based deposition processes. This can result in poor integrated circuit function or even render the target useless. Summary of the Invention

[0005] According to one embodiment of the present disclosure, a system for performing a thin film process is provided, comprising: a plasma-assisted thin film deposition chamber, comprising a fluid inlet configured to allow a process fluid to flow into the plasma-assisted thin film deposition chamber; a target support within the plasma-assisted thin film deposition chamber and below the fluid inlet, the target support configured to support a target within the plasma-assisted thin film deposition chamber; and a first grid within the plasma-assisted thin film deposition chamber and between the fluid inlet and the target support, the first grid comprising: a first side away from the target support; a second side close to the target support; and a plurality of first holes extending above the target support between the first side and the second side.

[0006] According to another embodiment of the present disclosure, a method for performing a thin film process is provided, comprising: supporting a target material within a thin film process chamber; allowing a process fluid to enter the thin film process chamber through a fluid inlet above the target material; supporting a first grid within the thin film process chamber between the fluid inlet and the target material; allowing the process fluid to flow through a first hole in the first grid; and after allowing the process fluid to flow through the first hole, allowing the process fluid to react with the target material.

[0007] According to another embodiment of the present disclosure, a method for performing a thin film process is provided, comprising: supporting a target within a process chamber; supporting a grid between the target and a fluid inlet of the process chamber; generating plasma in a plasma generator; allowing the plasma to enter the process chamber through the fluid inlet; reducing energy of the plasma by allowing the plasma to flow through holes in the grid; and performing a portion of the thin film process by reacting the plasma with the target. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Various aspects of the present disclosure may be best understood by the following detailed description when read in conjunction with the accompanying drawings. It should be noted that, in accordance with standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of various features may be arbitrarily increased or decreased for clarity of discussion.

[0009] Figure 1 is a block diagram of a plasma enhanced processing system 100 according to some embodiments.

[0010] Figure 2A and Figure 2B is a schematic diagram of a plasma enhanced thin film deposition system according to some embodiments.

[0011] Figure 3 is a schematic diagram of a plasma enhanced thin film deposition system according to some embodiments.

[0012] Figure 4 is a schematic diagram of a plasma enhanced thin film deposition system according to some embodiments.

[0013] Figures 5A-5D is a top view of a grid for a plasma enhanced thin film deposition system according to some embodiments.

[0014] Figure 6A and Figure 6B is a top view of a process chamber according to some embodiments.

[0015] Figures 7A-7D is an enlarged cross-sectional view of a grid for a plasma enhanced thin film deposition system according to some embodiments.

[0016] Figures 8A-8D is a side view of a target substrate during successive stages of a plasma enhanced thin film deposition process, according to some embodiments.

[0017] Figure 8E and Figure 8F According to some embodiments Figures 8A-8D Top view of the target substrate in FIG.

[0018] Figure 9 is a flow chart of a method for performing a thin film process on a target according to some embodiments.

[0019] Figure 10 is a flow chart of a method for performing a thin film process on a target according to some embodiments. DETAILED DESCRIPTION

[0020] The following disclosure provides many different embodiments or examples for implementing the different features of the present invention. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are merely examples and are not intended to be limiting. For example, in the description below, forming a first feature above or on a second feature may include an embodiment in which the first feature and the second feature are formed in direct contact, and may also include an embodiment in which an additional feature may be formed between the first feature and the second feature so that the first feature and the second feature may not be in direct contact. In addition, the present disclosure may repeat figure numerals and / or letters in various examples. This repetition is for the purpose of simplicity and clarity and does not, in itself, affect the relationship between the various embodiments and / or configurations discussed.

[0021] In the following description, a number of thicknesses and materials are described for various layers and structures within the integrated circuit die. For various embodiments, specific dimensions and materials are given by way of example. Based on this disclosure, those skilled in the art will recognize that other dimensions and materials can be used in many cases without departing from the scope of this disclosure.

[0022] Furthermore, for ease of description, spatially relative terms (e.g., "below," "beneath," "below," "above," "upper," etc.) may be used herein to describe the relationship of one element or feature to another element or feature(s) illustrated in the drawings. These spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations), and the spatially relative descriptors used herein should be interpreted accordingly.

[0023] In the following description, certain specific details are set forth to provide a thorough understanding of the various embodiments of the present disclosure. However, those skilled in the art will appreciate that the present disclosure can be practiced without these specific details. In other cases, well-known structures associated with electronic components and manufacturing techniques have not been described in detail to avoid unnecessarily obscuring the description of the embodiments of the present disclosure.

[0024] Unless the context requires otherwise, in the following description and claims, the word "comprise" and variations such as "include" and "comprising" are to be interpreted in an open, non-exclusive sense, i.e., "including, but not limited to."

[0025] The use of ordinal numbers such as first, second, and third does not necessarily imply an order of ranking but may simply distinguish between multiple instances of an action or structure.

[0026] Reference throughout this specification to "some embodiments" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment. Thus, the appearances of the phrases "in some embodiments" or "in an embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.

[0027] As used in this specification and the appended claims, the singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise. It should also be noted that the term "or" is generally employed in its sense including "and / or" unless the context clearly dictates otherwise.

[0028] Embodiments of the present disclosure provide a plasma enhanced atomic layer deposition (PEALD) process system that can safely perform a PEALD process on a sensitive target substrate without damaging the target substrate. The target is supported within a process chamber. A grid is placed over the target within the process chamber. The grid includes a first side away from the target, a second side near the target, and a plurality of holes extending between the first side and the second side. During the PEALD process, plasma reacts with the target. However, before the plasma reacts with the target, the energy of the plasma is modified, for example, reduced, by flowing the plasma through the holes in the grid.

[0029] Embodiments of the present disclosure provide several benefits. Reducing plasma energy through the grid prevents plasma damage to the target substrate. Consequently, fewer substrates or circuits need to be scrapped. Furthermore, circuits and devices exhibit better performance, and thin films are of higher quality.

[0030] Figure 1is a block diagram of a plasma-enhanced processing system 100 according to one embodiment. The plasma-enhanced processing system 100 includes a process chamber 102, a target support 104 within the process chamber 102 of the plasma-enhanced processing system 100, and a target 106 supported by the target support 104. The plasma-enhanced processing system 100 includes a grid 108 supported by a grid support 110 within the process chamber 102. As will be described in greater detail below, the various components of the plasma-enhanced processing system 100 cooperate to ensure that a plasma-enhanced process can be performed on the target 106 without damaging the target 106.

[0031] In some embodiments, the plasma-enhanced processing system 100 includes a plasma-enhanced thin film deposition system. The plasma-enhanced thin film deposition system utilizes plasma to assist in depositing a thin film on the top surface of the target material 106. One example of a plasma-enhanced thin film deposition system includes a plasma-enhanced atomic layer deposition (PEALD) system. Other examples of plasma-enhanced thin film deposition systems include a plasma-enhanced chemical vapor deposition (PECVD) system, a plasma-enhanced physical vapor deposition (PEPVD) system, or other types of plasma-enhanced thin film deposition systems.

[0032] In some embodiments, the plasma enhanced processing system 100 includes a plasma etching system. The plasma etching system utilizes plasma to assist in etching a thin film on the surface of the target material 106. The plasma etching system may include a dry etching system or other types of etching systems. In one example, the plasma etching system includes a plasma enhanced atomic layer etching (PEALE) system.

[0033] The plasma enhanced processing system 100 includes a plasma generator 114, a power supply 116, and a fluid source 118. The power supply 116 is coupled to the plasma generator 114. The fluid source 118 is configured to provide a fluid into the process chamber 102.

[0034] During a plasma enhanced process, a fluid source 118 supplies fluid to a plasma generator 114. A power supply 116 supplies power to the plasma generator 114. The plasma generator 114 generates a plasma from the fluid provided by the fluid source 118. The plasma is output from the plasma generator 114 into the process chamber 102. The plasma includes particles that travel toward the target 106. The particles may include charged particles and free radicals. As used herein, the term "charged particles" may include atoms carrying a net charge, molecules or compounds carrying a net charge, free electrons, and free protons (which may also be considered hydrogen ions). When the plasma encounters the target 106, the plasma interacts with the surface of the target 106 and performs the desired process on the target 106. For example, the plasma may help deposit a thin film or etch a thin film, depending on the circumstances.

[0035] In some cases, the plasma generator 114 can generate a very high-energy plasma. High-energy plasma is a plasma in which charged particles and radicals have high kinetic energy. In some cases, the high-energy plasma particles may damage the target material 106. Certain types of target materials may be particularly susceptible to damage from plasma particles. The target material 106 may include a semiconductor wafer, a substrate having a thin layer of carbon nanotubes on its surface, or other types of substrates or surfaces on which thin films can be deposited.

[0036] To reduce the possibility of damage to the target 106, the plasma-enhanced processing system 100 includes a grid 108 positioned between the plasma generator 114 and the target 106. The grid 108 is used to reduce the energy of plasma particles that interact with the target 106. As the plasma particles travel toward the target 106, they encounter the grid 108. The grid 108 reduces the energy of the plasma particles so that when the plasma particles encounter the target 106, the plasma particles have insufficient energy to damage the target 106. Depending on the circumstances, the plasma particles can also perform a deposition or etching process.

[0037] In some embodiments, the grid 108 comprises a plate or other solid structure that includes a plurality of apertures 112. The apertures 112 correspond to openings, holes, or channels through which plasma particles can pass from one side of the grid 108 to reach the other side of the grid 108. For example, a first side of the grid 108 is distal to the target 106. A second side of the grid 108 is proximal to the target 106. Plasma particles travel from the distal side of the grid 108 to the proximal side of the grid 108 via the apertures 112.

[0038] Energy reduction is achieved by some particles encountering a solid surface on the far side of the grid 108 before ultimately flowing through one of the holes 112. Particles that flow directly through the holes 112 without encountering a solid surface on the far side of the grid 108 will not experience significant energy reduction. Particles that strike a solid surface on the far side of the grid 108 will have reduced energy before ultimately flowing through one of the holes 112 toward the target 106. The result is that the average energy of the plasma particles is reduced by the grid 108 before reaching the target 106. In other words, in some embodiments, the energy of some particles of the plasma is reduced while the energy of other particles of the plasma is not reduced.

[0039] The size of the holes and the spacing between the holes can be selected to provide a desired reduction in the total or average energy of the plasma particles reaching the target 106. The larger the holes 112, or the greater the number of holes 112, the less energy reduction there is for the plasma particles. In other words, the higher the ratio of solid surface area to holes at the distal side of the grid 108, the greater the energy reduction there is for the plasma particles. In one embodiment, the ratio of hole surface area to solid surface area is between 0.1 and 0.2.

[0040] In one example, power source 116 is a radio frequency power source. Power source 116 provides a radio frequency voltage between electrodes or coils of plasma generator 114. In some cases, a first electrode is grounded, while a second electrode receives the radio frequency voltage. The radio frequency voltage can have a frequency between 500 kHz and 20 MHz, although other frequencies can be used without departing from the scope of this disclosure.

[0041] Figure 2A and Figure 2B is a schematic diagram of a PEALD system 200 according to some embodiments. Figure 2A , the PEALD system 200 includes a process chamber 102 including an interior volume 103. A target support 104 is located within the interior volume 103 and is configured to support a target 106 during a thin film deposition process. The PEALD system 200 is configured to deposit a thin film on the target 106. The PEALD system 200 includes a grid support 110 located within the interior volume 103. A grid 108 is supported on the grid support 110 above the target 106. As will be described in more detail below, the grid 108 helps ensure that the target 106 is not damaged during the thin film deposition process.

[0042] Although Figure 2A A PEALD system is primarily described, but the principles of the present disclosure can be extended to PEALE systems and other types of deposition, etching, or semiconductor processing systems.

[0043] The PEALD system includes a plasma generator 114. The plasma generator 114 is located above the process chamber 102. The plasma generator 114 includes a plasma generation chamber 130. The plasma generator 114 generates plasma within the plasma generation chamber 130. Further details regarding the plasma generator 114 will be provided below.

[0044] The PEALD system 200 includes a fluid inlet at the top of the process chamber 102. The fluid inlet may include a showerhead structure 126. The showerhead structure 126 includes a plurality of holes 128. Plasma and other process fluids can enter the interior volume 103 of the process chamber 102 from the plasma generation chamber 130. The showerhead structure 126 can be used as an electrode as part of the plasma generation process. The showerhead structure 126 can have other configurations without departing from the scope of this disclosure. In addition, the plasma process fluid can enter the interior volume 103 via other structures besides the showerhead structure 126.

[0045] In one embodiment, the PEALD system 200 includes a first fluid source 118a and a second fluid source 118b. The first fluid source 118a supplies a first fluid into the interior volume 103. The second fluid source 118b supplies a second fluid into the interior volume 103. Both the first fluid and the second fluid contribute to depositing a thin film on the target 106. Figure 2A Fluid sources 118a and 118b are shown, but in practice, fluid sources 118a and 118b may include or supply materials other than fluids. For example, fluid sources 118a and 118b may include material sources that provide all of the materials for the deposition process.

[0046] The PEALD system performs deposition processes in cycles. Each cycle includes flowing a first process fluid from a first fluid source 118a, followed by purging the first process fluid from the process chamber by flowing a purge gas from one or both of purge sources 122a and 122b. The purge fluid flows through the interior volume 103 and exits the interior volume 103 via one or more exhaust ports 132, thereby carrying any remaining process fluid out of the interior volume 103 via the exhaust ports 132. Following the first purge process, a second process fluid is flowed into the interior volume 103 from a second fluid source 118b, followed by purging the second process fluid from the process chamber by flowing a purge gas from one or both of purge sources 122a and 122b. This corresponds to a single ALD cycle. Each cycle deposits an atomic or molecular layer of a thin film on the target 106. In some embodiments, more or fewer fluid sources and more or fewer stages may be present when depositing a single atomic or molecular layer of a thin film on the target 106.

[0047] In some embodiments, during a first stage of the ALD process, a precursor is flowed into the interior volume 103 through the showerhead structure 126. The precursor may flow from the first fluid source 118a. The precursor is adsorbed onto the exposed surface of the target material 106. The precursor forms a layer one atom or one molecule thick. The precursor may flow through the plasma generator 114 without operating the plasma generator 114, such that no plasma is generated when the precursor is flowed from the first fluid source 118a. A purge gas is then flowed into the interior volume 103 from one or both of the purge sources 122a and 122b to purge any remaining precursor or precursor byproducts from the process chamber 102 via the exhaust port 132.

[0048] The second process fluid then flows from the second fluid source 118b into the plasma generation chamber 130. In this case, the power supply 116 supplies power to the plasma generator 114 to generate a plasma from the second process fluid within the plasma generation chamber 130. Next, the plasma flows from the plasma generation chamber 130 into the interior volume 103 of the process chamber 102 via the aperture 128 of the showerhead structure 126. The plasma comprises high-energy ions, free radicals, and charged particles. The ions, free radicals, and charged particles bombard the target material 106 and react with the atomic or molecular layer formed on the target material 106 by the precursor. This reaction alters the atomic or molecular layer, thereby completing the deposition of the first thin film. A second purge step can then be performed by flowing a purge fluid from one or both of the purge sources 122a and 122b into the interior volume 103 and exhausting it through the exhaust port 132.

[0049] In some cases, the target 106 may be damaged during the bombardment by the plasma. In these cases, the plasma may cause portions of the target 106 to split in an undesirable manner, rather than simply completing the formation of an atomic or molecular layer having the desired composition. This can occur with various types of target materials 106. In one example, the target 106 comprises a carbon nanotube substrate on which a thin film is to be deposited by a PEALD process. However, the plasma phase of the PEALD process may cause significant damage to the carbon nanotube substrate. Other types of substrates may also be damaged, such as semiconductor substrates, dielectric substrates, conductive substrates, or other types of substrates. Therefore, while some specific examples are provided in which the target 106 comprises a carbon nanotube substrate, other types of target materials may be used without departing from the scope of this disclosure.

[0050] The PEALD system 200 advantageously reduces or prevents damage to the target 106 during the plasma phase of the PEALD process by using a grid 108. The grid 108 is supported above the target 106 by a grid support 110 coupled to the inner wall of the process chamber 102. The grid 108 serves to reduce the energy of plasma particles that interact with the target 106. As the plasma particles travel toward the target 106, they encounter the grid 108. The grid 108 reduces the energy of the plasma particles so that when they encounter the target 106, the plasma particles have insufficient energy to damage the target 106. Depending on the circumstances, the plasma particles can also perform a deposition or etching process.

[0051] In some embodiments, the grid 108 comprises a plate or other solid structure including a distal side 111 and a proximal side 113. The proximal side 113 is proximal to the target 106. The distal side 111 is distal to the target 106. The grid 108 further comprises a plurality of apertures 112 extending from the distal side 111 to the proximal side 113. The apertures 112 correspond to openings, holes, or passages through which plasma particles can pass from one side of the grid 108 to reach the other side of the grid 108. For example, plasma particles travel from the distal side of the grid 108 to the proximal side of the grid 108 via the apertures 112.

[0052] Energy reduction is achieved because many or most of the plasma particles will encounter a solid surface away from side 111 rather than flowing directly into one of the holes 112. When the plasma particles impact the solid surface away from side 111, they will lose some of their kinetic energy. The pressure difference and the overall fluid flow will eventually carry the plasma particles with reduced energy through the holes 112. Many plasma particles 140 will encounter the target material 106 and will perform the desired function of reacting with the precursor layer to complete the atomic layer or molecular layer deposition of the thin film on the target material 106. The plasma particles 140 lose enough energy in the aggregate via the grid 108 so that the target material 106 is not damaged by the plasma particles. The grid 108 reduces the impact and mean free path of the plasma particles. The plasma particles will still complete their role in the ALD process without causing substantial damage to the target material 106.

[0053] Although Figure 2AThe grid 108 is shown with apertures 112 having a substantially vertical cross-section between distal side 111 and proximal side 113, but apertures 112 may have other cross-sectional shapes. For example, apertures 112 may be tapered such that the surface area of ​​the apertures at distal side 111 is greater than the surface area at proximal side 113, or such that the surface area of ​​the apertures at distal side 111 is less than the surface area at proximal side 113. The apertures 112 may have non-linear shapes, such as curved cross-sections, stepped cross-sections, or other shapes. When viewed from the top or bottom, apertures 112 may have a circular, rectangular, square, oval, elliptical, or other shape.

[0054] Particles that flow directly through the holes 112 without encountering a solid surface on the far side of the grid 108 may not experience a significant reduction in energy. Particles that strike a solid surface on the far side 111 of the grid 108 will have reduced energy before ultimately flowing through one of the holes 112 toward the target 106. The result is that the average energy of the plasma particles is reduced by the grid 108 before reaching the target 106.

[0055] The size of the holes 112 and the spacing between the holes 112 can be selected to provide a desired reduction in the total or average energy of the plasma particles reaching the target 106. The larger the holes 112, or the greater the number of holes 112, the less energy reduction there is for the plasma particles. In other words, the higher the ratio of solid surface to holes at the distal side of the grid 108, the greater the energy reduction there is for the plasma particles.

[0056] The distance D1 between the target support 104 and the bottom of the showerhead structure 126 can be between 20 mm and 300 mm. When D1 is less than 20 mm, there may not be enough height to accommodate the thickness of the sample and the grid. In one embodiment, when D1 is greater than 20 mm, sufficient height is retained to accommodate the thickness of the sample and the grid. In one embodiment, if D1 is greater than 300 mm, the flow field in the chamber may be difficult to control and the energy of the plasma particles may drop sharply.

[0057] Figure 2A A system is shown in which the plasma generator 114 is located above the process chamber 102. In such a system, the distance D1 may be relatively large. However, in other systems, such as a capacitively coupled plasma generator, the plasma generator 114 may include an electrode located within the process chamber 102 relatively close to the target 106. In these cases, the distance D1 may be relatively small. In each case, the grid 108 is located in the path of the plasma particles before they encounter the target 106. Other distances than those described above may be used without departing from the scope of the present disclosure.

[0058] The grid 108 can be separated from the showerhead structure 126 by a distance D2. The distance D2 can correspond to the distance between the distal side 111 and the bottom of the showerhead structure 126. The distance D2 can be greater than 1 mm. In embodiments where the showerhead structure 126 is used as an electrode for plasma generation, this distance can be sufficient to ensure that arcing does not occur between the grid 108 and the showerhead structure 126. In some embodiments, D2 can be less than 1 mm, provided that arcing between the grid 108 and the showerhead structure 126 can be avoided. The distance between the proximal side 113 and the target 106 will be a function of D1 and D2. In some embodiments, the distance between the proximal side 113 and the target 106 is approximately equal to the difference between D1 and D2. The distance between the proximal side 113 and the target 106 should not be so small as to reduce the effectiveness of curtailing the plasma energy.

[0059] The holes 112 may have a lateral dimension D3 between 1 mm and 30 mm. According to embodiments of the present disclosure, D3 is not limited to the above ranges. For example, D3 may be less than 1 mm, provided that it is not unreasonable to face challenges in manufacturing a grid of holes 112 having a lateral dimension D3. In other embodiments, D3 may be greater than 30 mm, provided that a sufficient reduction in plasma energy is achieved. As described above, the lateral dimension may be constant from the far side 111 to the near side 113, such as Figure 2A As shown, or may be variable, such as in the case of a curved, tapered, stepped or other shape of the aperture 112. Thus, the aperture 112 may have a first size at the distal side 111 and a second size at the proximal side 113 that is larger or smaller than the first size.

[0060] In some embodiments, the mesh 108 may comprise a metal. The metal may comprise stainless steel, tungsten, or an aluminum alloy. Stainless steel may have the advantage of sufficient hardness and strength, as well as resistance to thermal damage. Stainless steel can be welded, and when its surface is fully passivated, the surface will not chemically react. Tungsten may be advantageous because it has a high melting point and can withstand high temperature processes. Aluminum alloy may be advantageous because it is low cost, lightweight, has high thermal conductivity, and has low magnetic permeability. Other metals and alloys may be used for the mesh 108 without departing from the scope of the present disclosure.

[0061] In some embodiments, the mesh 108 may comprise a ceramic material. The ceramic material may include quartz, Y2O3, ZrO2, Al2O3, SiO2, B2O3, Er2O3, Nd2O3, Nb2O5, CeO2, Sm2O3, Yb2O3, or a coating of these materials on the aforementioned metal meshes. Other ceramic materials may be used without departing from the scope of the present disclosure. Ceramic materials may be beneficial because they are resistant to corrosion, high temperatures, and wear.

[0062] In some embodiments, the mesh 108 may include a rare earth fluoride. The rare earth fluoride may include fluorides of scandium (Sc), yttrium (Y), iridium (Ir), rhodium (Rh), lanthanum (La), cerium (Ce), europium (Eu), dysprosium (Dy), erbium (Er), or hafnium (Hf), or a coating of these materials on the aforementioned metal meshes. The rare earth fluoride may improve the strength and thermal conductivity of the mesh 108.

[0063] In some embodiments, the grid 108 includes a low thermal expansion material, such as an oxide, nitride, boride, carbide, or a coating of these materials. Other low thermal expansion materials may be used without departing from the scope of the present disclosure.

[0064] The grid 108 may comprise foil, a rigid structural plate, or other material, shape, or consistency. The grid may be electrically grounded. Alternatively, the grid may be biased with a voltage without being grounded.

[0065] The plasma enhanced processing system 100 may include a motor coupled to the grid 108. The motor may move the grid to a position required for a plasma-assisted process. After the plasma-assisted process, the motor may move the grid 108 out of its original position to allow for a non-plasma process to proceed without interfering with the non-plasma process.

[0066] The plasma generator 114 may include a conductive coil 124. A voltage may be applied to the conductive coil 124 to generate plasma within the plasma generation chamber 130. In one example, the power supply 116 is a radio frequency power supply to the conductive coil 124. The radio frequency voltage may have a frequency between 500 kHz and 20 MHz, although other frequencies may be used without departing from the scope of the present disclosure.

[0067] Figure 2B shows the second stage of depositing the thin film layer Figure 2AA PEALD system 200 is provided, wherein a plasma is generated from a process fluid. The process fluid flows from a second fluid source 118b through a fluid conduit 134 into a plasma generation chamber 130. A power supply 116 supplies power to a conductive coil 124, thereby generating a plasma from the second process fluid. The plasma includes plasma particles 140. As used herein, the term "plasma particles" includes, but is not limited to, ions, electrons, protons, and free radicals. The plasma particles 140 flow from the plasma generation chamber 130 through the apertures 128 of the showerhead structure 126 into the interior volume 103 of the process chamber 102. The plasma particles 140 may initially have very high energy. However, at least a portion of the plasma particles encounter the surface of the distal side 111 of the grid 108 and lose some of their energy. These plasma particles flow along the surface of the distal side 111 until encountering the apertures 112 and flowing through the apertures 112 to the proximal side 113 of the grid 108. Other plasma particles may not contact the distal side of the grid 108 and may pass directly through the grid 108 via the apertures 112. These plasma particles 140 may then continue to encounter the target material 106. Although not in Figure 2B 1 , but the plasma particles 140 may also flow around the edges of the grid 108 and through the gaps in the grid support 110. During a subsequent purge, the plasma particles 140 will flow out of the process chamber 102 through the exhaust port 132.

[0068] Figure 3 FIG2 is a schematic diagram of a PEALD system 300 according to some embodiments. PEALD system 300 is substantially similar to PEALD system 200 in most respects. PEALD system 300 differs from PEALD system 200 in that PEALD system 300 includes a first grid 108a supported by a first grid support 110a and a second grid 108b supported by a second grid support 110b. First grid 108a includes a distal side 111a, a proximal side 113a, and apertures 112a. Second grid 108b includes a distal side 111b, a proximal side 113b, and apertures 112b. First grid 108a and second grid 108b can be substantially similar to each other, except that apertures 112a and 112b are laterally offset from each other such that plasma particles 140 traveling vertically downward through apertures 112a encounter a solid surface on distal side 111b of second grid 108b before passing through apertures 112b of second grid 108b.

[0069] Thus, the first and second meshes 108a and 108b together can reduce the energy of the plasma particles 140 more than either mesh alone. Thus, the plasma particles 140 will encounter the solid surface away from the side 111a, then flow through the holes 112a, then encounter the away side 111b, and then flow through the holes 112b. This results in a greater reduction in the energy of the plasma particles 140 before they encounter the target 106 than if only one of the meshes 108a or 108b were present.

[0070] In some embodiments, the first grid 108a is separated from the second grid 108b by a vertical distance D4. The vertical distance D4 can be between 1 mm and 10 mm. When the vertical distance D4 is outside this range, the particles may not hit the grids in a short time, thereby failing to achieve the purpose of reducing the energy of the particles. In addition, if D4 is less than 1 mm, the precursors or particles may block the pipes or holes and hinder the operation of the grids. In other embodiments, D4 is less than 1 mm or greater than 10 mm. D4 should be sufficient to ensure that the energy of the plasma particles is reduced while still being able to flow through the two grids toward the target material 106. However, other values ​​of the vertical distance D4 may be used without departing from the scope of the present disclosure.

[0071] Although Figure 3 Two grids 108a and 108b are shown, but in practice the system 300 may include three or more grids provided with offset holes. In addition, the grids may have different numbers of holes, holes of different sizes, holes of different shapes, and different materials. In one embodiment, the size of the holes decreases from the upper grid to the lower grid. In other embodiments, the size of the holes increases from the upper grid to the lower grid. In addition, the grids themselves may have different sizes. For example, depending on the shape of the chamber, the upper grid may be smaller than the lower grid. Thus, different numbers of grids may be used without departing from the scope of this disclosure. In some embodiments, individual grids may include holes of different sizes (e.g., different surface areas at the far side or near the side surface), or holes of different shapes.

[0072] Figure 4 is a schematic diagram of a PEALD system 400 according to some embodiments. The PEALD system 400 is substantially similar to Figure 2AThe PEALD system 400 is similar to the PEALD system 200, except that the position of the grid 108 in the PEALD system 400 is different. Specifically, the PEALD system 400 includes a grid support 110 disposed on the target support 104. Specifically, the grid support 110 is laterally disposed around the target 106. The grid 108 is located on the grid support 110 above the target 106. The grid 108 is disposed at a distance D5 above the target 106. The distance D5 can be between 5 mm and 100 mm, but other distances can be used without departing from the scope of the present disclosure. In the interior volume 103 of the process chamber 102, the grid 108 can be easily removed and replaced again. In some embodiments, the grid support 110 can also be easily removed and replaced. In some embodiments, the grid support 110 and the grid 108 are fixed together. In some embodiments, the grid support 110 and the grid 108 can be integral with each other. In some embodiments, the grid 108 is only placed on the grid support 110. Although not in Figure 4 , but similar to PEALD system 300 , multiple grids 108 may be used in PEALD system 400 , for example, by stacking one or more grids on top of grid 108 , using spacers to separate the grids.

[0073] Figure 5A is a top view of grid 108 according to some embodiments. Figure 5A The grid 108 is able to Figures 1-4 An example of a grid 108 used in a system. Figure 5A The grid 108 is circular. Each hole 112 is separated from an adjacent hole 112 by a distance D6. Distance D6 can be between 5 mm and 50 mm, although other distances can be used without departing from the scope of the present disclosure. Each hole 112 has a lateral dimension D7. Transverse dimension D7 can be between 1 mm and 30 mm. Holes 112 smaller than 1 mm may be difficult to manufacture. Holes 112 larger than 30 mm may be less effective in preventing damage to the target 106 due to an inability to reduce the energy of the plasma particles to a sufficient amount. However, the holes 112 may have other dimensions other than these without departing from the scope of the present disclosure. For example, in some embodiments, D7 can be less than 1 mm or greater than 30 mm. The grid 108 is circular and has an overall dimension (or diameter) D8. Dimension D8 can be between 100 mm and 400 mm, although other dimensions can be used without departing from the scope of the present disclosure. According to some embodiments, the ratio of D6 to D7 is between 50:1 and 1:6.

[0074] Figure 5B is a top view of grid 108 according to some embodiments. Figure 5B The grid 108 is rectangular with circular holes 112 . Figure 5BThe grid is able to Figures 1-4 An example of a grid 108 used in a system. Figure 5B The dimensions associated with the grid 108 may be similar to the combined Figure 5A Those described.

[0075] Figure 5C is a top view of a plurality of grids 108a and 108b according to some embodiments. The second grid 108b is located below and obscured by the first grid 108a. The apertures 112a of the first grid 108a are laterally offset relative to the apertures 112b of the second grid 108b. The grids 108a and 108b are capable of Figure 3 108a and 108b are one example of a grid used in a system, although other types of grids may be used without departing from the scope of the present disclosure. The grids 108a and 108b may be configured such that the holes 112b are positioned laterally approximately halfway between the holes 112a. The grids 108a and 108b may have a Figure 5A Basically similar dimensions as described.

[0076] Figure 5D is a top view of grid 108 according to some embodiments. Figure 5D The grid 108 is circular with square holes 112 . Figure 5D The grid is able to Figures 1-4 An example of a grid 108 used in a system. Figure 5D The dimensions associated with the grid 108 may be similar to the combined Figure 5A Those described.

[0077] Figure 6A is a top view of the interior volume 103 of the process chamber 102 according to some embodiments. The process chamber 102 is capable of Figures 1-4 An example of a process chamber used in a system. Figure 6A The top view of FIG. 1 shows a grid support 110 disposed within the interior volume 103 of the process chamber 102. The grid support 110 comprises a frame comprised of individual bars, rods, or other types of solid supports. Figure 6A Not shown are the target support 104 and target 106 that may be present within the interior volume 103 of the process chamber 102. The grid support 110 may have other shapes and configurations without departing from the scope of the present disclosure. The grid support 110 may include conductive materials, dielectric materials, ceramic materials, or other types of materials.

[0078] Figure 6B Shown Figure 6AFIG. 1 shows a process chamber 102 in which a circular grid 108 is placed on a grid support 110. The portion of the grid support 110 below the grid 108 is shown in phantom. The grid 108 includes a plurality of holes 112. Grids 108 having other shapes and configurations may be used on the grid support 110 without departing from the scope of the present disclosure.

[0079] Figure 7A is an enlarged cross-sectional view of a portion of the grid 108 . Figure 7A The grid 108 is able to Figures 1-4 An example of a grid 108 used in a system. Figure 7A The holes 112 of the grid 108 are shown to include tapered sidewalls 150 such that the holes 112 have a larger dimension, such as a surface area, at a distal side 111 of the grid 108 than at a proximal side 113 of the grid 108. Alternatively, the holes 112 may have a larger dimension, such as a surface area, at the proximal side 113 than at the distal side 111. The sidewalls 150 are substantially straight and extend obliquely rather than vertically.

[0080] Figure 7B is an enlarged cross-sectional view of a portion of the grid 108 . Figure 7B The grid 108 is able to Figures 1-4 An example of a grid 108 used in a system. Figure 7B The apertures 112 of the grid 108 are shown to include curved sidewalls 150 such that the apertures 112 have a larger dimension, such as a surface area, at a distal side 111 of the grid 108 than at a proximal side 113 of the grid 108. Alternatively, the apertures 112 may have a larger dimension, such as a surface area, at the proximal side 113 than at the distal side 111.

[0081] Figure 7C is an enlarged cross-sectional view of a portion of the grid 108 . Figure 7C The grid 108 is able to Figures 1-4 An example of a grid 108 used in a system. Figure 7C The holes 112 of the grid 108 are shown to include stepped sidewalls 150 such that the holes 112 have a larger dimension, such as a surface area, at a distal side 111 of the grid 108 than at a proximal side 113 of the grid 108. Alternatively, the holes 112 may have a larger dimension, such as a surface area, at the proximal side 113 than at the distal side 111. The sidewalls 150 include steps 152.

[0082] Figure 7D is an enlarged cross-sectional view of a portion of the grid 108 . Figure 7D The grid 108 is able to Figures 1-4 An example of a grid 108 used in a system. Figure 7DThe apertures 112 of the grid 108 are shown to include stepped sidewalls 150. The step 152 is positioned midway between the distal side 111 and the proximal side 113 such that the apertures 112 have the same dimensions, e.g., surface area, at the distal side 111 of the grid 108 as at the proximal side 113 of the grid 108. Various other shapes may be used for the apertures 112 without departing from the scope of the present disclosure.

[0083] Figures 8A-8D is a simplified cross-sectional view of the target 106 during a PEALD process for depositing a thin film on the target 106 , in accordance with some embodiments. Figures 8A-8D The process shown in 2002 deposits a single atomic or molecular layer of a thin film on a target 106. In one embodiment, the target 106 is a porous substrate of carbon nanotubes. Figure 8E is an enlarged top view of a portion of a target 106 including a plurality of carbon nanotubes entangled with each other. Figures 8A-8D A monomolecular silicon nitride layer is deposited on the carbon nanotube target 106 by a process of 100 nm. Other targets and materials may be used without departing from the scope of the present disclosure.

[0084] Refer to Figure 2 and Figure 8A ,exist Figure 8A In the embodiment, a first process fluid flows from a first fluid source 118a through an inactive plasma generating chamber 130 into the interior volume 103 of the process chamber 102. The fluid includes a plurality of precursor molecules 156. In one example, the precursor molecules 156 include SAM24(C8H 22 N2Si). A carrier gas of molecular nitrogen (N2) can also be used to help the precursor molecules 156 flow onto the target 106. The precursor molecules 156 are adsorbed onto the exposed surface of the carbon nanotube target 106. Figure 8B As shown, the precursor molecules 156 form a thin film, single molecular layer 160 on the target material 106 .

[0085] exist Figure 8B 1 , one or both of the purge sources 122a and 122b flows a purge gas into the interior volume 103 of the process chamber 102. The purge gas evacuates the remaining precursor molecules 156 and other byproducts from the process chamber 102 via the exhaust port 132. In one example, the purge gas includes molecular nitrogen (N2), although other purge gases may also be used without departing from the scope of the present disclosure.

[0086] exist Figure 8CIn the process, a second process fluid flows from a second fluid source 118b into the plasma generation chamber 130. The power supply 116 provides voltage to the conductive coil 124 and generates a plasma from the second process fluid within the plasma generation chamber 130. In one example, the second process fluid comprises H2 or N2. The second process fluid can flow at a flow rate at a temperature and pressure similar to that used when flowing the first process fluid. Plasma is generated to ionize hydrogen and nitrogen molecules. The result is a plasma comprising hydrogen ions, nitrogen ions, and free electrons. A carrier gas can also flow into the process chamber 102 to transport plasma particles 140 through one or more grids 108 to the target 106. The carrier gas can include argon or other types of carrier gases and can have a flow rate of 80 seem. The plasma particles can break chemical bonds in the thin film layer 160, thereby changing the composition of the thin film, which can then allow another round of precursor to be deposited and fragmented to form a second thin film. In one example, the thin film is silicon nitride, although other thin films can also be used. Because one or more grids 108 are used within the process chamber 102 , the energy of the plasma particles 140 is reduced to a level that does not damage or destroy the carbon nanotubes of the target 106 .

[0087] exist Figure 8D 1 , one or both of the purge sources 122a and 122b flows a purge gas into the interior volume 103 of the process chamber 102. The purge gas evacuates the remaining plasma particles 140 and other byproducts from the process chamber 102 via the exhaust port 132. In one example, the purge gas includes molecular nitrogen (N2), although other purge gases may also be used without departing from the scope of the present disclosure.

[0088] Figure 8F is a top view of the carbon nanotube target 106 after forming multiple silicon nitride molecular layers on the carbon nanotubes. Figures 8A-8D 20 cycles of the process shown to form Figure 8F Conformal silicon nitride film on carbon nanotubes shown. Other numbers of cycles may be used without departing from the scope of this disclosure.

[0089] Although Figures 8A-8F A process for depositing a silicon nitride film on a carbon nanotube target is described, but other types of films may be deposited on the carbon nanotube target 106 or on different types of targets 106 according to embodiments of the present disclosure.

[0090] Figure 9 is a flow chart of a method 900 for performing a thin film process on a target according to some embodiments. The method 900 may be used in conjunction with Figure 1-8F The system, components and process described herein. At step 902, method 900 includes supporting a target material within a thin film processing chamber. An example of a target material is Figure 1Target 106 is shown. An example of a process chamber is Figure 1 The process chamber 102 is shown. At step 904, the method 900 includes allowing a process fluid to enter the thin film process chamber via a fluid inlet above the target. An example of a process fluid is Figure 2B The plasma particles 140 are shown. An example of a fluid inlet is Figure 2A The showerhead structure 126 is shown. At step 906, the method 900 includes supporting a first grid between the fluid inlet and the target in the thin film processing chamber. An example of the first grid is Figure 1 At step 908, method 900 includes flowing the process fluid through a first hole in the first grid 108. An example of a first hole is Figure 2A The aperture 112 is shown. At 910, the method 900 includes reacting the process fluid with the target material after flowing the process fluid through the first aperture.

[0091] Figure 10 is a flow chart of a method 1000 for performing a thin film process on a target according to some embodiments. The method 1000 may be used in conjunction with Figures 1-9 The system, components, and processes described herein. At step 1002, method 1000 includes supporting a target material within a process chamber. An example of a target material is Figure 1 Target 106 is shown. An example of a process chamber is Figure 1 The process chamber 102 is shown. At step 1004, the method 1000 includes supporting a grid between the target and a fluid inlet of the process chamber. An example of a grid is Figure 1 An example of a fluid inlet is a grid 108. Figure 2A The showerhead structure 126 is shown. At step 1006, the method 1000 includes generating a plasma in a plasma generator. An example of a plasma generator is Figure 1 The plasma generator 114 is shown. At step 1008, the method 1000 includes allowing the plasma to enter the process chamber via the fluid inlet. At step 1010, the method 1000 includes reducing the energy of the plasma by flowing the plasma through holes in the grid. An example of a hole is Figure 2A Aperture 112 is shown. At step 1012, method 1000 includes performing a portion of a thin film process by reacting a plasma with a target material.

[0092] In some embodiments, a system includes: a process chamber including a fluid inlet configured to flow a process fluid into the process chamber; a target support within the process chamber below the fluid inlet and configured to support a target within the process chamber; and a first grid within the process chamber between the fluid inlet and the target support, wherein the grid includes a first side distal to the target support, a second side proximate to the target support, and a plurality of first holes extending above the target support between the first side and the second side.

[0093] In some embodiments, a method includes supporting a target within a thin film process chamber, allowing a process fluid to enter the thin film process chamber through a fluid inlet above the target, and supporting a first grid within the thin film process chamber between the fluid inlet and the target. The method includes flowing the process fluid through first holes in the first grid, and after flowing the process fluid through the first holes, reacting the process fluid with the target.

[0094] In some embodiments, a method includes supporting a target within a process chamber, supporting a grid between the target and a fluid inlet of the process chamber, and generating plasma in a plasma generator. The method includes allowing the plasma to enter the process chamber through the fluid inlet, reducing the energy of the plasma by flowing the plasma through holes in the grid, and performing a portion of a thin film process by reacting the plasma with the target.

[0095] Embodiments of the present disclosure provide a plasma-enhanced atomic layer deposition (PEALD) process system that can safely perform a PEALD process on a sensitive target substrate without damaging the target substrate. The target is supported within a process chamber. A grid is positioned above the target within the process chamber. The grid includes a first side away from the target, a second side near the target, and a plurality of holes extending between the first and second sides. During the PEALD process, plasma reacts with the target. However, before the plasma reacts with the target, the energy of the plasma is reduced by passing the plasma through the holes in the grid.

[0096] Embodiments of the present disclosure provide several benefits. Reducing plasma energy through the grid prevents plasma damage to the target substrate. Consequently, fewer substrates or circuits need to be scrapped. Furthermore, circuits and devices exhibit better performance, and thin films are of higher quality.

[0097] The features of several embodiments are summarized above so that those skilled in the art can better understand the various aspects of the present disclosure. Those skilled in the art will understand that they can easily use this disclosure as a basis to design or modify other processes and structures to achieve the same purpose and / or achieve the same advantages as the embodiments described herein. Those skilled in the art will also recognize that these equivalent constructions do not depart from the spirit and scope of the present disclosure, and they can make various changes, substitutions and modifications without departing from the spirit and scope of the present disclosure.

[0098] The various embodiments described above can be combined to provide further embodiments. Aspects of the embodiments can be modified, if necessary, to employ concepts of the various patents, applications, and publications to provide yet further embodiments.

[0099] These and other changes can be made to the embodiments in light of the above detailed description. In general, in the following claims, the terms used should not be construed to limit the claims to the specific embodiments disclosed in the specification and claims, but should be construed to include all possible embodiments and the full scope of equivalents to which such claims are entitled. Therefore, the claims are not limited by this disclosure.

[0100] Example 1 is a system for performing a thin film process, comprising: a plasma-assisted thin film deposition chamber, comprising a fluid inlet, the fluid inlet being configured to allow a process fluid to flow into the plasma-assisted thin film deposition chamber; a target material support, the target material support being within the plasma-assisted thin film deposition chamber and below the fluid inlet, and the target material support being configured to support a target material within the plasma-assisted thin film deposition chamber; and a first grid, the first grid being within the plasma-assisted thin film deposition chamber and between the fluid inlet and the target material support, the first grid comprising: a first side, the first side being away from the target material support; a second side, the second side being close to the target material support; and a plurality of first holes, the plurality of first holes extending above the target material support between the first side and the second side.

[0101] Example 2 is the system of Example 1, further comprising: a plasma generator configured to generate a plasma including plasma particles from the process fluid, wherein the first grid is configured to reduce the energy of the plasma particles before the plasma particles react with a target supported by the target support.

[0102] Example 3 is the system of Example 2, further comprising: a second grid within the plasma-assisted thin film deposition chamber and between the first grid and the target support, and the second grid comprising: a third side away from the target support; a fourth side close to the target support; and a plurality of second holes extending above the target support between the third side and the fourth side.

[0103] Example 4 is the system of Example 3, wherein the second hole is laterally offset relative to the first hole.

[0104] Example 5 is the system of Example 4, wherein the second aperture is laterally offset relative to the first aperture such that a perpendicular line passing through any of the first apertures does not pass through any of the second apertures.

[0105] Example 6 is the system of Example 3, wherein the first grid is vertically separated from the second grid by a distance between 1 mm and 10 mm.

[0106] Example 7 is the system of Example 1, wherein the fluid inlet is a showerhead structure, and wherein the first grid is separated from the showerhead structure by a distance greater than 1 mm.

[0107] Example 8 is the system of Example 1, wherein the first hole is wider at the first side than at the second side.

[0108] Example 9 is a method for performing a thin film process, comprising: supporting a target material within a thin film process chamber; allowing a process fluid to enter the thin film process chamber through a fluid inlet above the target material; supporting a first grid within the thin film process chamber between the fluid inlet and the target material; allowing the process fluid to flow through a first hole in the first grid; and after allowing the process fluid to flow through the first hole, allowing the process fluid to react with the target material.

[0109] Example 10 is the method of Example 9, wherein the process fluid comprises plasma.

[0110] Example 11 is the method of Example 10, comprising performing a portion of a plasma enhanced atomic layer deposition process on the target material by reacting the plasma with the target material.

[0111] Example 12 is the method of Example 11, wherein the target material includes carbon nanotubes.

[0112] Example 13 is the method of Example 12, wherein reacting the plasma with the target material comprises reacting the plasma with a precursor material on the carbon nanotubes.

[0113] Example 14 is the method of Example 10, comprising performing a portion of a plasma enhanced atomic layer etch process on the target by reacting the plasma with the target.

[0114] Example 15 is the method of Example 10, comprising reducing the energy of the plasma by flowing the plasma through the first holes in the first mesh.

[0115] Example 16 is the method of Example 10, comprising: supporting a second grid between the target material and the first grid; and flowing the plasma through second holes in the second grid after flowing the plasma through the first holes in the first grid and before allowing the plasma to react with the target material.

[0116] Example 17 is the method of Example 9, wherein the width of the first hole is between 1 mm and 30 mm.

[0117] Example 18 is a method for performing a thin film process, comprising: supporting a target material within a process chamber; supporting a grid between the target material and a fluid inlet of the process chamber; generating plasma in a plasma generator; allowing the plasma to enter the process chamber through the fluid inlet; reducing the energy of the plasma by allowing the plasma to flow through holes in the grid; and performing a portion of the thin film process by allowing the plasma to react with the target material.

[0118] Example 19 is the method of Example 18, wherein the hole has tapered sidewalls.

[0119] Example 20 is the method of Example 18, wherein the grid comprises a rare earth material.

Claims

1. A system for performing a thin film process, comprising: a plasma-assisted thin film deposition chamber comprising a fluid inlet configured to flow a process fluid into the plasma-assisted thin film deposition chamber; a target support within the plasma-assisted thin film deposition chamber and below the fluid inlet, the target support being configured to support a target within the plasma-assisted thin film deposition chamber; A first grid is located within the plasma-assisted thin film deposition chamber and between the fluid inlet and the target support, the first grid comprising: a first side, the first side being away from the target support; a second side, the second side being proximate to the target support; and a plurality of first holes extending above the target support between the first side and the second side; and a second grid within the plasma-assisted thin film deposition chamber and between the first grid and the target support, and comprising: a third side, the third side being away from the target support; a fourth side, the fourth side being adjacent to the target support; and a plurality of second holes extending above the target support between the third side and the fourth side, The second holes are laterally offset relative to the first holes such that a vertical line passing through any one of the first holes does not pass through any one of the second holes.

2. The system according to claim 1, further comprising: A plasma generator is configured to generate a plasma including plasma particles from the process fluid, wherein the first grid is configured to reduce energy of the plasma particles before the plasma particles react with a target supported by the target support.

3. The system according to claim 1, wherein: The first grid is vertically separated from the second grid by a distance between 1 mm and 10 mm.

4. The system according to claim 1, wherein: The fluid inlet is a showerhead structure, and wherein the first grid is separated from the showerhead structure by a distance greater than 1 mm.

5. The system according to claim 1, wherein: The first hole is wider at the first side than at the second side.

6. A method for performing a thin film process, comprising: Supporting the target material in the thin film processing chamber; allowing plasma to enter the thin film processing chamber through a fluid inlet above the target; supporting a first grid between the fluid inlet and the target within the thin film processing chamber, and supporting a second grid between the target and the first grid; flowing the plasma through first holes in the first grid and second holes in the second grid, wherein the second holes are laterally offset relative to the first holes such that a vertical line passing through any of the first holes does not pass through any of the second holes; as well as After flowing the plasma through the first and second holes, the plasma is reacted with the target material.

7. The method according to claim 6, comprising: A portion of a plasma enhanced atomic layer deposition process is performed on the target material by reacting the plasma with the target material.

8. The method according to claim 7, wherein: The target material includes carbon nanotubes.

9. The method according to claim 8, wherein Allowing the plasma to react with the target material includes allowing the plasma to react with a precursor material on the carbon nanotubes.

10. The method according to claim 6, comprising: A portion of a plasma enhanced atomic layer etch process is performed on the target material by reacting the plasma with the target material.

11. The method according to claim 6, comprising: The energy of the plasma is reduced by flowing the plasma through the first holes in the first mesh.

12. The method according to claim 6, wherein: The width of the first hole is between 1 mm and 30 mm.

13. The method according to claim 6, wherein: The first hole has a tapered sidewall.

14. The method according to claim 6, wherein The first grid includes a rare earth material.

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