Boundary evolution repair method and device for process simulation and storage medium

Abstract

The application provides a boundary evolution repair method and device for process simulation and a storage medium, wherein the boundary evolution repair method for process simulation comprises the following steps: performing boundary identification on a semiconductor device; performing loop detection on the identified boundary; when there is an unreasonable boundary loop, performing boundary repair to determine a reasonable boundary loop. The application introduces a boundary shape detection and repair process in the process simulation of the semiconductor device, so as to eliminate the influence of factors such as channels and shields in the process, prevent the corresponding boundary from penetrating into the single material, obtain correct boundary results generated by the process simulation, and thus obtain expected simulation results, and ensure the accuracy and reliability of the process simulation results.

Description

Technical Field

[0001] This invention relates to the field of semiconductor industry technology, and more specifically, to a boundary evolution repair method, apparatus, and storage medium for process simulation. Background Technology

[0002] Currently, the semiconductor industry typically uses process simulation software to simulate the process of semiconductor devices, which consists of etching, deposition, implantation, oxidation, diffusion, and other process steps, in order to shorten the design and development cycle of semiconductor device processes and reduce their costs.

[0003] During the semiconductor device manufacturing process, due to the shielding effect and the channeling effect, the exposed surface and boundary surface of the semiconductor device move and grow at different speeds. This may lead to anisotropic changes in the exposed surface and boundary surface, resulting in uneven and irregular surfaces or interfaces, unreasonable boundary movement and boundary morphology, which in turn affect the final process simulation results. Summary of the Invention

[0004] The problem this invention addresses is: how to obtain the correct boundary results generated by process simulation.

[0005] To address the above problems, this invention provides a boundary evolution repair method for process simulation, comprising:

[0006] Boundary identification of semiconductor devices;

[0007] Perform loop detection on the identified boundaries;

[0008] When unreasonable boundary loops exist, boundary repair is performed to determine reasonable boundary loops.

[0009] Optionally, the boundary identification of the semiconductor device includes:

[0010] Boundary identification is performed on the exposed surfaces and / or boundary surfaces of the semiconductor device.

[0011] Optionally, the boundary identification of the semiconductor device includes:

[0012] Boundary identification of the semiconductor device is performed during process simulation.

[0013] Optionally, the boundary identification of the semiconductor device in the process simulation includes:

[0014] Numerical simulations were performed on the semiconductor device.

[0015] Finite element mesh generation is performed on the semiconductor device;

[0016] The finite element mesh of the exposed surface and interface of the semiconductor device is adjusted based on the results of the numerical simulation.

[0017] Based on the finite element mesh, the exposed surfaces and interfaces of the semiconductor device are identified by boundary identification.

[0018] Optionally, the boundary identification of the exposed surface and the interface of the semiconductor device based on the finite element mesh includes:

[0019] Inspect the material on both sides of each finite element in the finite element mesh;

[0020] The boundary of the boundary surface is defined as the boundary where the materials on both sides are different.

[0021] Optionally, the loop detection of the identified boundaries includes:

[0022] The boundary surfaces with the same endpoints are connected sequentially to form a boundary edge sequence;

[0023] Identify all loops in the boundary edge sequence.

[0024] Optionally, the step of performing boundary repair and determining reasonable boundary loops when unreasonable boundary loops exist includes:

[0025] When an unreasonable boundary loop exists in the boundary edge sequence, the boundaries constituting the unreasonable boundary loop in the boundary edge sequence are deleted to obtain the reasonable boundary loop formed by the remaining boundaries in the boundary edge sequence; wherein, the unreasonable boundary loop is a closed loop in the boundary edge sequence formed by boundaries with a number less than a first preset number.

[0026] To address the above problems, the present invention also provides a boundary evolution repair device for process simulation, comprising:

[0027] Boundary recognition unit, used for boundary recognition of semiconductor devices;

[0028] A loop detection unit is used to perform loop detection on the identified boundaries;

[0029] The boundary repair unit is used to repair the boundary and determine the reasonable boundary loop when there is an unreasonable boundary loop.

[0030] To address the aforementioned problems, the present invention also provides a boundary evolution repair device for process simulation, comprising a computer-readable storage medium storing a computer program and a processor, wherein the computer program is read and executed by the processor to implement the aforementioned boundary evolution repair method for process simulation.

[0031] To address the aforementioned problems, the present invention also provides a computer-readable storage medium storing a computer program, which, when read and executed by a processor, implements the boundary evolution repair method for process simulation described above.

[0032] Compared with existing technologies, this invention has the following advantages: This method introduces boundary morphology detection and repair processes into semiconductor device process simulation to eliminate the pathological effects caused by factors such as channels and shading on the movement and growth (evolution) of exposed surface boundaries and interfaces (material interfaces) during the process. It prevents these boundaries from penetrating deep into the monomer material, thus obtaining correct boundary results from the process simulation and achieving the expected simulation results, ensuring the accuracy and reliability of the process simulation results. Furthermore, this method is simple, easy to implement, and transparent to the user. It can eliminate unreasonable parts of the boundaries in the simulation results with extremely low time and space overhead without changing the accuracy of the process simulation calculations, producing the expected process simulation results, and has significant application value. Attached Figure Description

[0033] Figure 1 This is a flowchart of a boundary evolution repair method for process simulation in an embodiment of the present invention;

[0034] Figure 2 This is a sub-flowchart for step 100;

[0035] Figure 3 This is a sub-flowchart for step 140;

[0036] Figure 4 This is a sub-flowchart for step 200. Detailed Implementation

[0037] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0038] Combination Figure 1 As shown, this embodiment of the invention provides a boundary evolution repair method for process simulation, including the following steps:

[0039] Step 100: Perform boundary identification on semiconductor devices.

[0040] Specifically, when a semiconductor device is simulated using the corresponding process simulation software, the substrate material region of the semiconductor device is divided into a finite element mesh (such as a mesh composed of a finite number of triangular or quadrilateral units), and the boundaries of the exposed surfaces and / or boundary surfaces of the semiconductor device are identified based on the finite element mesh.

[0041] Step 200: Perform loop detection on the identified boundaries.

[0042] Specifically, based on the corresponding boundaries identified in step 100, loop detection is performed to detect whether the edges of the finite element units (such as triangular units) involved in the exposed surface boundary and the boundary surface (interface) boundary constitute a loop other than the exposed surface boundary and the boundary surface boundary. This is used to determine the rationality of the boundary movement and boundary shape. In other words, when a loop other than the exposed surface boundary and the boundary surface boundary is detected, the boundary movement and boundary shape are unreasonable (there may be a boundary that penetrates into the interior of the corresponding single material of the semiconductor device); when no loop other than the exposed surface boundary and the boundary surface boundary is detected, the boundary movement and boundary shape are reasonable.

[0043] Step 300: When unreasonable boundary loops exist, perform boundary repair to determine reasonable boundary loops.

[0044] Specifically, based on the loop detection results of step 200, when a closed loop with unreasonable boundary movement or boundary shape (denoted as an unreasonable boundary loop) is detected, other than the exposed surface boundary and the boundary surface boundary, boundary repair is performed, that is, the unreasonable boundary loop is eliminated to obtain a reasonable boundary loop (exposed surface boundary, boundary surface boundary). In this way, by eliminating unreasonable boundary loops, unreasonable boundary movement and boundary shape are eliminated, ensuring that a reasonable boundary loop can still be obtained even when shading effects and channeling effects exist, thus obtaining correct process simulation results.

[0045] Thus, this method introduces boundary morphology detection and repair processes into semiconductor device process simulation. It eliminates the pathological effects caused by factors such as channels and obstructions on the movement and growth (evolution) of exposed surface boundaries and interfaces (material interfaces) during the process, preventing these boundaries from penetrating deep into the monomer material. This ensures accurate boundary results from the process simulation, leading to the desired simulation results and guaranteeing the accuracy and reliability of the simulation. Furthermore, this method is simple, easy to implement, and transparent to the user. It eliminates unreasonable boundary parts in the simulation results with extremely low time and space overhead without altering the accuracy of the process simulation calculations, producing expected process simulation results. This demonstrates significant application value.

[0046] Optionally, step 100 includes:

[0047] Boundary identification of exposed surfaces and / or boundary surfaces of semiconductor devices.

[0048] Specifically, based on the finite element mesh, at least one of the exposed surfaces and boundary surfaces of the semiconductor device is identified, wherein the boundary surface is the material interface (i.e. the interface between different materials within the semiconductor device).

[0049] Optionally, step 100 includes:

[0050] Boundary identification of semiconductor devices is performed in process simulation.

[0051] The corresponding semiconductor devices are simulated using appropriate process simulation software. Specifically, in the process simulation, the distribution data of elements such as electrons, holes, and dopant particles in the semiconductor device are obtained through numerical calculation simulation. Then, the simulation results are used to simulate the device-level physical characteristics, verify whether the device performance meets the design expectations, and make improvements accordingly. In the numerical calculation simulation process, the substrate material region is first divided into finite element meshes, and boundary identification is performed based on all finite element elements of the finite element mesh.

[0052] Optionally, combined Figure 1 , Figure 2 As shown, boundary identification of semiconductor devices in process simulation includes:

[0053] Step 110: Perform numerical simulation on the semiconductor device;

[0054] Step 120: Perform finite element mesh generation on the semiconductor device;

[0055] Step 130: Adjust the finite element mesh of the exposed surface and interface of the semiconductor device based on the results of numerical simulation.

[0056] Through steps 110-130, in the semiconductor device process simulation, numerical calculations and simulations of corresponding elements of the semiconductor device are performed to obtain the distribution data of elements such as electrons, holes, and doped particles in the semiconductor device. Then, the process simulation results are used to simulate the device-level physical characteristics to verify whether the device performance meets the design expectations and to make improvements. During this process, the substrate material region of the semiconductor device is divided into finite element units (triangular units are used as an example below). Then, based on the results of the numerical calculation simulation, operations such as adding, modifying, and removing triangular units are performed to adjust the process exposure surface and material interface, generating the process and obtaining the device structure. Specifically, during the process simulation, the etching process can remove all or part of the specified material on the exposure surface, resulting in the removal of the triangular units on the device exposure surface; the deposition process can form new triangular units formed by the deposited material on the exposure surface; in the oxidation process, an oxidation reaction occurs at the interface between the oxidant region and the (polycrystalline) silicon region, the oxide thickens, and the substrate thins; this requires inserting triangular units in the oxidant region and moving the original triangular units to simulate the movement of the exposure surface and interface. In the semiconductor device manufacturing process, due to the shielding effect and channel effect, the movement and growth rates of the exposed surfaces and boundary surfaces of semiconductor devices vary, which may lead to anisotropic changes in the exposed surfaces and boundary surfaces, resulting in uneven and irregular surfaces or interfaces. This produces unreasonable boundary movement and boundary morphology, which affects the final process simulation results. Therefore, during the process simulation, after the calculation of numerical data such as the distribution data of electrons, holes, and doped particles in the semiconductor device is completed, it is necessary to check the morphology of the boundary curves at the exposed surfaces and boundaries to correctly determine whether the channel has been filled by deposition and oxide growth, thereby obtaining simulation results that meet expectations and ensuring the accuracy and reliability of the process simulation results.

[0057] Step 140: Based on the finite element mesh, identify the boundaries of the exposed surfaces and interfaces of the semiconductor devices.

[0058] Specifically, after step 300, the exposed surfaces and boundary surfaces of the semiconductor device are identified based on the adjusted finite element mesh.

[0059] Optionally, combined Figure 2 , Figure 3 As shown, step 140 includes:

[0060] Step 141: Check the material on both sides of each finite element in the finite element mesh;

[0061] Step 142: Determine the boundary of the boundary surface as the boundary where the materials on both sides are different.

[0062] The following explanation uses a triangular element as an example in the finite element mesh. Specifically, after all numerical calculations for the semiconductor device process simulation are completed, the boundary edges are determined by checking whether the materials on both sides of each edge of all triangular elements are the same. The boundaries of triangular elements with the same materials on both sides are initially identified as the boundaries of the boundary surfaces (i.e., boundary edges).

[0063] Optionally, combined Figure 1 , Figure 4 As shown, step 200 includes:

[0064] Step 210: Connect the boundaries of boundary faces with the same endpoints in sequence to form a boundary edge sequence;

[0065] Step 220: Determine all loops in the boundary edge sequence.

[0066] According to steps 210-220, loop detection is performed on the boundaries of the boundary surfaces. Specifically, the boundaries of boundary surfaces with the same endpoints (vertices) are first connected sequentially to form a boundary edge sequence (e1, e2, ..., e...). n This is used to detect all loops formed by the boundary edge sequence. Since a boundary surface generally has only one loop (i.e., a reasonable boundary loop), when a boundary is detected to have at least two loops, it indicates that there are loops in the boundary edge sequence other than the boundary surface boundary (i.e., unreasonable boundary loops).

[0067] Optionally, step 300 includes:

[0068] When there is an unreasonable boundary loop in the boundary edge sequence, delete the boundaries that constitute the unreasonable boundary loop in the boundary edge sequence to obtain the reasonable boundary loop composed of the remaining boundaries in the boundary edge sequence; wherein, the unreasonable boundary loop is a closed loop in the boundary edge sequence composed of boundaries with a number less than a first preset number.

[0069] For example, after each numerical calculation in the process simulation, the boundary edges are determined by checking whether the materials on both sides of each edge of all triangular elements are the same. Edges with the same endpoints are connected sequentially to form the boundary edge sequence e1, e2, ..., e n Next, consider whether discontinuous boundary edges intersect, such as sequentially judging e3, ..., e n each edge e i Does (i = 3, ..., n) correlate with e? i-2 If the intersection of two boundary edges lies on edge e, ..., one of e1 (the intersection point is calculated directly using the equation of the line containing the edge); iOtherwise, if the two sides do not intersect, the process continues according to logic; otherwise, after boundary repair in step 300, the process continues according to logic (e.g., further determining whether subsequent boundary edges in the boundary edge sequence intersect). Specifically, when the calculation (judgment) result shows e... i With e j The intersection of (2≤ij≤m, where m is the first preset quantity) is located on edge e. i If an unreasonable boundary loop is detected, then edge e is sorted according to the order of the boundary edge sequence (from 1 to n). i The termination endpoint is changed to the intersection point, while edge e j The starting endpoint is changed to the intersection point, and the continuous subsequence e in the boundary edge sequence is deleted. j+1 , ..., e i-1 This involves deleting unreasonable boundary loops until all unreasonable boundary loops are deleted, resulting in reasonable boundary loops composed of the remaining boundaries in the boundary edge sequence.

[0070] For example, as shown in the figure, the specific differences in the concentration gradient curve before and after using this method for the same semiconductor device process structure are compared: after using this method, the boundary morphology of low concentration can be correctly identified, thereby generating the corresponding contour structure.

[0071] Another embodiment of the present invention provides a boundary evolution repair device for process simulation, comprising:

[0072] Boundary recognition unit, used for boundary recognition of semiconductor devices;

[0073] A loop detection unit is used to perform loop detection on the identified boundaries;

[0074] The boundary repair unit is used to repair the boundary and determine the reasonable boundary loop when there is an unreasonable boundary loop.

[0075] In this embodiment, the boundary identification unit, loop detection unit, and boundary repair unit of the boundary evolution repair device for process simulation work together to ensure that the boundary evolution repair method for process simulation can be executed smoothly and stably, so as to achieve the repair of the corresponding boundary evolution and ensure the accuracy and reliability of the process simulation results.

[0076] Another embodiment of the present invention provides a boundary evolution repair device for process simulation, including a computer-readable storage medium storing a computer program and a processor. When the computer program is read and run by the processor, the above-described boundary evolution repair method for process simulation is implemented.

[0077] In this way, by coordinating the processor, computer-readable storage medium, and other structures of the boundary evolution repair device for process simulation, the boundary evolution repair method for process simulation is executed smoothly and stably, thereby achieving the repair of the corresponding boundary evolution and ensuring the accuracy and reliability of the process simulation results.

[0078] Another embodiment of the present invention provides a computer-readable storage medium storing a computer program, which, when read and run by a processor, implements the above-described boundary evolution repair method for process simulation.

[0079] The technical solutions of the embodiments of the present invention, or the parts that contribute to the prior art, or all or part of the technical solutions, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) or processor to execute all or part of the steps of the methods of the embodiments of the present invention. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, ROM, RAM, magnetic disks, or optical disks.

[0080] Storing the corresponding computer program for the boundary evolution repair method based on process simulation on a computer-readable storage medium ensures the stability of the program's reading and execution by the appropriate processor. This ensures the smooth and stable execution of the boundary evolution repair method, achieving the repair of the corresponding boundary evolution and guaranteeing the accuracy and reliability of the process simulation results.

[0081] While the disclosure is as stated above, its scope of protection is not limited thereto. Those skilled in the art can make various changes and modifications without departing from the spirit and scope of this disclosure, and all such changes and modifications will fall within the protection scope of this invention.

Claims

1. A boundary evolution repair method for process simulation, characterized in that, The method comprises the following steps: boundary recognition is performed on a semiconductor device; loop detection is performed on the recognized boundaries; when there is an unreasonable boundary loop, boundary repair is performed to determine a reasonable boundary loop; wherein the boundary recognition performed on the semiconductor device comprises: boundary recognition is performed on exposed surfaces and / or boundary surfaces of the semiconductor device, and / or boundary recognition is performed on the semiconductor device in process simulation; wherein the boundary recognition performed on the semiconductor device in process simulation comprises: numerical calculation simulation is performed on the semiconductor device; finite element meshing is performed on the semiconductor device; finite element meshing of exposed surfaces and boundary surfaces of the semiconductor device is adjusted according to a result of the numerical calculation simulation; boundary recognition is performed on the exposed surfaces and the boundary surfaces of the semiconductor device according to the finite element meshing.

2. The method for boundary evolution repair for process simulation oriented as claimed in claim 1, wherein, The boundary recognition performed on the exposed surfaces and the boundary surfaces of the semiconductor device according to the finite element meshing comprises: checking materials on both sides of each finite element unit in the finite element meshing; determining a boundary between the materials on both sides as a boundary surface of the semiconductor device.

3. The method for boundary evolution repair for process simulation oriented as claimed in claim 2, wherein, The loop detection performed on the recognized boundaries comprises: connecting boundaries of the boundary surfaces with the same end points in sequence to form a boundary edge sequence; determining all loops in the boundary edge sequence.

4. The method for boundary evolution repair for process simulation oriented as claimed in claim 3, wherein, The boundary repair performed when there is an unreasonable boundary loop to determine a reasonable boundary loop comprises: when there is the unreasonable boundary loop in the boundary edge sequence, deleting the boundaries in the boundary edge sequence that form the unreasonable boundary loop to obtain the reasonable boundary loop formed by the remaining boundaries in the boundary edge sequence; wherein the unreasonable boundary loop is a closed loop formed by a number of boundaries less than a first preset number in the boundary edge sequence.

5. A boundary evolution repair device for process simulation, characterized by, The method comprises the following steps: a boundary recognition unit is configured to perform boundary recognition on a semiconductor device; a loop detection unit is configured to perform loop detection on the recognized boundaries; a boundary repair unit is configured to perform boundary repair when there is an unreasonable boundary loop to determine a reasonable boundary loop. wherein the boundary recognition performed on the semiconductor device comprises: boundary recognition is performed on exposed surfaces and / or boundary surfaces of the semiconductor device, and / or boundary recognition is performed on the semiconductor device in process simulation; wherein the boundary recognition performed on the semiconductor device in process simulation comprises: numerical calculation simulation is performed on the semiconductor device; finite element meshing is performed on the semiconductor device; finite element meshing of exposed surfaces and boundary surfaces of the semiconductor device is adjusted according to a result of the numerical calculation simulation; boundary recognition is performed on the exposed surfaces and the boundary surfaces of the semiconductor device according to the finite element meshing.

6. A boundary evolution repair device for process simulation, characterized by, A computer readable storage medium storing a computer program and a processor are provided, and when the computer program is read and run by the processor, a boundary evolution repair method for process simulation as claimed in any one of claims 1-4 is implemented.

7. A computer readable storage medium characterized by The computer readable storage medium stores a computer program, and the computer program is read and run by the processor, and a boundary evolution repairing method for process simulation is realized.

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