A common-gate common-source multi-channel gallium nitride HEMT device and manufacturing method

Abstract

The present application relates to a kind of co-gate co-source type multi-channel gallium nitride HEMT device structure and manufacturing method, wherein structure includes substrate substrate, buffer layer located at one side of substrate substrate, first heterojunction structure and second heterojunction structure located at the side of buffer layer away from substrate substrate, the first heterojunction structure includes at least one AlGaN / GaN heterojunction, the second heterojunction structure includes multiple AlGaN / GaN heterojunctions stacked along the first direction, first electrode is connected with one end of the first heterojunction structure, metal connecting portion is connected with the other end of first heterojunction structure and is connected with one end of second heterojunction structure;Second electrode is connected with the other end of the second heterojunction structure, gate electrode is located at the side of the first heterojunction structure away from the substrate substrate.

Description

Technical Field

[0001] This invention relates to the field of semiconductor power devices, specifically to a common-gate, common-source multichannel gallium nitride (HEMT) device and its manufacturing method. Background Technology

[0002] AlGaN / GaN heterojunction field-effect transistors (HFETs), also known as high electron mobility transistors (HEMTs) or two-dimensional electron gas field-effect transistors (2-DEGFETs), are depletion-mode (normally on) devices due to the presence of a two-dimensional electron gas (2-DEG). During operation, the concentration and mobility of the 2-DEG are modulated by an applied bias voltage; different bias voltages result in different operating states. The gate-source bias voltage Vgs controls the device's on / off state, while the drain-source voltage Vds creates a transverse electric field, causing the 2-DEG to transport along the channel, forming the source-drain current Ids.

[0003] Gallium nitride (GaN) semiconductor devices have attracted widespread attention in high-voltage applications due to their wide bandwidth and high breakdown field. GaN devices capable of achieving high withstand voltages above 3kV are depletion-mode (D-mode) HEMTs, which have high on-resistance R0. ON Furthermore, normally-on depletion-mode devices present numerous problems in practical applications. Because the device is always on, a negative voltage needs to be applied to keep it off, which leads to additional power consumption during periods when the device is not in use, resulting in energy waste. Summary of the Invention

[0004] In view of this, the present invention provides a common-gate, common-source multichannel gallium nitride HEMT device and a manufacturing method thereof, which employs a D-mode multichannel GaN / AlGaN heterojunction structure to effectively reduce the on-resistance R. ON And it is controlled by E-mode gate control.

[0005] To achieve the above objectives, the present invention adopts the following technical solution:

[0006] A common-gate common-source multichannel gallium nitride HEMT device includes: a substrate, a buffer layer, a first heterojunction structure, a second heterojunction structure, a first electrode, a metal connection portion, a second electrode, and a gate electrode.

[0007] The buffer layer is located on one side of the substrate. The first heterojunction structure and the second heterojunction structure are located on the side of the buffer layer away from the substrate. The first heterojunction structure includes at least one AlGaN / GaN heterojunction, and the second heterojunction structure includes multiple AlGaN / GaN heterojunctions stacked along a first direction, wherein the first direction is perpendicular to the substrate.

[0008] The first electrode is connected to one end of the first heterojunction structure; the metal connection portion is connected to the other end of the first heterojunction structure and to one end of the second heterojunction structure; the second electrode is connected to the other end of the second heterojunction structure; the gate electrode is located on the side of the first heterojunction structure away from the substrate.

[0009] Due to the thinness of the two-dimensional electron gas conductive channels, AlGaN / GaN heterostructures typically exhibit high series resistance. Therefore, a multi-channel structure is employed, with multiple AlGaN / GaN heterojunctions vertically stacked to form multiple parallel two-dimensional electron gas conductive channels, thereby reducing the series resistance.

[0010] Furthermore, a first P-type doped GaN layer is provided between the gate electrode and the first heterojunction structure.

[0011] Furthermore, a second P-type doped GaN layer is provided on the side of the second heterojunction structure away from the substrate.

[0012] Furthermore, the projection of the first heterojunction structure onto the substrate does not overlap with the projection of the second heterojunction structure onto the substrate.

[0013] This invention combines enhancement-mode HEMT devices and depletion-mode HEMT devices, enabling the depletion-mode HEMT device to possess the normally-off performance of the enhancement-mode HEMT device while also providing a simplified gate drive. Simultaneously, it allows the low-voltage enhancement-mode HEMT device to operate under high voltage; when the device is off, the high voltage primarily drops across the depletion-mode HEMT device. Furthermore, by using series-connected enhancement-mode HEMT devices, the device is kept off at zero bias, effectively improving the reliability of the enhancement-mode HEMT device.

[0014] Furthermore, the side of the first heterojunction structure away from the substrate also includes an AlGaN doped layer, the projection of the AlGaN doped layer on the substrate not overlapping the projection of the gate electrode on the substrate; the side of the AlGaN doped layer away from the substrate includes a third electrode.

[0015] Furthermore, the AlGaN doped layer includes a P-type doped region and an N-type doped region; the P-type doped region is connected to the third electrode, and the N-type doped region is connected to the metal connection portion.

[0016] Furthermore, the first electrode is electrically connected to the third electrode. The breakdown voltage of the P-GaN gate region is improved by employing a junction field plate in the gate region.

[0017] Meanwhile, this invention also discloses a method for manufacturing a common-gate, common-source multichannel gallium nitride HEMT device, comprising the following steps:

[0018] Provide substrates.

[0019] A GaN buffer layer is grown on the substrate, the GaN buffer layer including a first surface, the first surface being the side of the GaN buffer layer away from the substrate.

[0020] n AlGaN / GaN heterojunction structures are sequentially grown on the first surface along a first direction, wherein the first direction is perpendicular to the substrate.

[0021] Selective etching is performed on the n-layer AlGaN / GaN heterojunction structure to form a first heterojunction structure and a second heterojunction structure, wherein the first heterojunction structure includes at least one AlGaN / GaN heterojunction, and the second heterojunction structure includes n AlGaN / GaN heterojunctions stacked along a first direction.

[0022] A P-type doped GaN layer is epitaxially grown on the side of the AlGaN / GaN heterojunction structure away from the substrate.

[0023] Selective etching is performed on the P-type doped GaN layer to form a first P-type doped GaN layer and a second P-type doped GaN layer. The first P-type doped GaN layer is located on the side of the first heterojunction structure away from the substrate, and the second P-type doped GaN layer is located on the side of the second heterojunction structure away from the substrate.

[0024] A first electrode, a second electrode, a metal connection portion, and a gate electrode are deposited, wherein the first electrode is connected to one end of the first heterojunction structure, the metal connection portion is connected to the other end of the first heterojunction structure and to one end of the second heterojunction structure, the second electrode is connected to the other end of the second heterojunction structure, and the gate electrode is located on the side of the first P-type doped GaN layer away from the substrate.

[0025] Furthermore, prior to the step of depositing the first electrode, the second electrode, the metal connection portion, and the gate electrode, the following step is also included:

[0026] A P-type doped AlGaN layer is selectively epitaxially grown on the side of the first heterojunction structure away from the substrate, wherein the projection of the P-type doped AlGaN layer on the substrate does not overlap with the projection of the first P-type doped GaN layer on the substrate.

[0027] Selective ion implantation is performed on the P-type doped AlGaN layer to obtain an N-type doped region, which is located on the side of the P-type doped AlGaN layer away from the gate electrode.

[0028] Furthermore, the step of depositing the first electrode, the second electrode, the metal connection portion, and the gate electrode further includes:

[0029] Simultaneously, a third electrode is deposited on the side of the P-type doped AlGaN layer away from the substrate. The projection of the third electrode on the substrate does not overlap with the projection of the N-type doped region on the substrate, and the first electrode and the third electrode are electrically connected.

[0030] Other features and advantages of the invention will be set forth in the description which follows, and will be apparent in part from the description, or may be learned by practicing the invention. The objects and other advantages of the invention may be realized and obtained by means of the structures pointed out in the description, claims and drawings. Attached Figure Description

[0031] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0032] Figure 1 This diagram illustrates a common-gate, common-source, multichannel gallium nitride HEMT device according to an embodiment of the present invention.

[0033] Figure 2 A schematic diagram of a common-gate common-source multichannel gallium nitride HEMT device according to another embodiment of the present invention is shown;

[0034] Figure 3 This diagram shows a three-dimensional schematic of a common-gate, common-source, multi-channel gallium nitride HEMT device according to an embodiment of the present invention.

[0035] Figure 4 This diagram illustrates the steps of a common-gate common-source multichannel gallium nitride HEMT device fabrication method according to an embodiment of the present invention.

[0036] Figure 5 The diagram illustrates the steps of a common-gate, common-source, multi-channel gallium nitride (HEMT) device fabrication method according to another embodiment of the present invention. Detailed Implementation

[0037] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0038] It should be noted that the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, "multiple" or "several" means two or more, unless otherwise explicitly specified.

[0039] The term "and / or" in this invention is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, B existing alone, and A and B existing simultaneously. Clearly, the described embodiments are only some, not all, of the embodiments of this invention.

[0040] Typically, AlGaN has a bandgap of 3.95 Ev, while GaN has a bandgap of 3.4 Ev. Due to the difference in bandgap between AlGaN and GaN, a heterojunction is formed at the interface between these two materials. At the heterojunction interface, the Fermi level of the semiconductor materials changes abruptly, causing electrons to transfer from AlGaN to GaN. This electron transfer alters the electric field at the heterojunction interface. AlGaN loses electrons, forming a depletion layer that hinders the movement of electrons farther from the heterojunction. GaN, with its lower electron potential energy, binds electrons and drives out holes, forming a potential well region with free electrons on the GaN semiconductor side of the heterojunction interface. As free electrons accumulate in the potential well, a two-dimensional electron gas (2DEG) is formed. Constrained by the semiconductors on both sides, the 2DEG can only move in a direction parallel to the heterojunction interface. Since the 2DEG detaches from the AlGaN that provides it and enters GaN, it is no longer controlled by ionized impurity scattering, thus exhibiting a very high electron mobility. Two-dimensional electron gas with high electron mobility can move at high speed on the heterojunction surface to form a conductive channel. Therefore, such gallium nitride power devices are also called gallium nitride HEMT (High Electron Mobility Transistor).

[0041] This invention provides a common-gate, common-source multichannel gallium nitride HEMT device 100. Figure 1 This is a schematic diagram of a common-gate, common-source, multi-channel gallium nitride (HEMT) device provided in an embodiment of the present invention, as shown below. Figure 1 As shown, it includes: a substrate 101, a buffer layer 102, a heterojunction structure layer 103, and a metal electrode layer 104. The heterojunction structure layer 103 includes a first heterojunction structure 1031 and a second heterojunction structure 1032, and the metal electrode layer 104 includes a first electrode 1041, a metal connection portion 1042, a second electrode 1043, and a gate electrode 1044.

[0042] The buffer layer 102 is located on one side of the substrate 101. The first heterojunction structure 1031 and the second heterojunction structure 1032 are located on the side of the buffer layer 102 away from the substrate 101. The first heterojunction structure 1031 includes at least one AlGaN / GaN heterojunction, and the second heterojunction structure 1032 includes a plurality of AlGaN / GaN heterojunctions stacked along a first direction, wherein the first direction is perpendicular to the substrate 101.

[0043] The first electrode 1041 is connected to one end of the first heterojunction structure 1031; the metal connection portion 1042 is connected to the other end of the first heterojunction structure 1031 and to one end of the second heterojunction structure 1032; the second electrode 1043 is connected to the other end of the second heterojunction structure 1032; the gate electrode 1044 is located on the side of the first heterojunction structure 1031 away from the substrate 101.

[0044] Due to the thinness of the two-dimensional electron gas conductive channels, AlGaN / GaN heterostructures typically exhibit high series resistance. Therefore, a multi-channel structure is employed, with multiple AlGaN / GaN heterojunctions vertically stacked to form multiple parallel two-dimensional electron gas conductive channels, thereby reducing the series resistance.

[0045] Furthermore, a first P-type doped GaN layer 1051 is provided between the gate electrode 1044 and the first heterojunction structure 1031. The first P-type doped GaN layer 1051 can raise the barrier height of the AlGaN layer above the Fermi level, depleting the two-dimensional electron gas originally located in the triangular potential well, thereby achieving enhancement mode. When a positive voltage is applied to the gate electrode 1044, the channel potential gradually decreases. When it drops below the Fermi level, the channel gradually opens, the device gradually conducts, and the source-drain current gradually increases. That is, in the region where the first heterojunction structure 1031 is located, the switching on and off of the device can be controlled by controlling the voltage on the gate electrode, which is equivalent to an enhancement-mode (E-mode) HEMT device.

[0046] Furthermore, a second P-type doped GaN layer 1052 is provided on the side of the second heterojunction structure 1032 away from the substrate 101. One end of the second P-type doped GaN layer 1052 is in contact with the second electrode 1043, which can uniformly shape the electric field in the drain region and improve the breakdown voltage of the drain region.

[0047] In a preferred embodiment, the first P-type doped GaN layer 1051 and the second P-type doped GaN layer 1052 are made of the same material and are prepared by the same process step.

[0048] The region where the second heterojunction structure 1032 is located corresponds to a depletion-mode (D-mode) HEMT device. In this invention, by combining an enhancement-mode HEMT device and a depletion-mode HEMT device, the depletion-mode HEMT device possesses the normally-off performance of an enhancement-mode HEMT device, while also having a simplified gate drive. Simultaneously, it allows a low-voltage enhancement-mode HEMT device to operate under high voltage; when the device is off, the high voltage primarily drops across the depletion-mode HEMT device. Furthermore, by using series-connected enhancement-mode HEMT devices, the device is in a zero-bias off state, effectively improving the reliability of the enhancement-mode HEMT device.

[0049] Furthermore, the projection of the first heterojunction structure 1031 on the substrate 101 does not overlap with the projection of the second heterojunction structure 1032 on the substrate 101.

[0050] Furthermore, Figure 2 A schematic diagram of a common-gate, common-source multichannel gallium nitride HEMT device is provided for another embodiment of the present invention, as shown below. Figure 2 As shown, the side of the first heterojunction structure 1031 away from the substrate 101 further includes an AlGaN doped layer 106, the projection of the AlGaN doped layer 106 on the substrate 101 does not overlap with the projection of the gate electrode 1044 on the substrate 101; the side of the AlGaN doped layer 106 away from the substrate 101 includes a third electrode 1045.

[0051] Furthermore, the AlGaN doped layer 106 includes a P-type doped region and an N-type doped region; the P-type doped region is connected to the third electrode 1045, and the N-type doped region is connected to the metal connection portion 1042.

[0052] Furthermore, Figure 3 This is a three-dimensional schematic diagram of a common-gate, common-source, multi-channel gallium nitride (HEMT) device according to an embodiment of the present invention. Figure 3 As shown, the first electrode 1041 is electrically connected to the third electrode 1045, and the breakdown voltage of the P-GaN gate region is improved by using a junction field plate in the gate region.

[0053] The following describes the conduction method of a common-gate common-source multichannel gallium nitride HEMT device provided by the present invention.

[0054] When a positive voltage is applied to the second electrode 1043 and the gate electrode 1044, electrons accumulate at the lower end of the gate electrode 1044, and the device is in the turn-on state. When a positive voltage is applied to the second electrode 1043 and the gate electrode 1044 is in the zero-bias state, the device is in the turn-off state. The reverse voltage is jointly borne by the multi-channel high-voltage depletion-mode HEMT structure and the heterojunction field plate, protecting the gate from the influence of the high electric field.

[0055] Understandably, in the structural design of semiconductor devices, design parameters such as the length, width, height, and doping concentration can be controlled to improve the performance of semiconductor devices.

[0056] Figure 4 This is a schematic diagram illustrating the steps of a common-gate, common-source multichannel gallium nitride (HEMT) device fabrication method according to an embodiment of the present invention. Figure 4As shown, the present invention also provides a method for manufacturing a common-gate, common-source multichannel gallium nitride (HEMT) device, comprising the following steps:

[0057] A substrate 101 is provided.

[0058] A GaN buffer layer 102 is grown on the substrate 101. The GaN buffer layer 102 includes a first surface, which is the side of the GaN buffer layer 102 away from the substrate 101.

[0059] n AlGaN / GaN heterojunction structures are sequentially grown on the first surface along a first direction, wherein the first direction is perpendicular to the substrate.

[0060] The n-layer AlGaN / GaN heterojunction structure is selectively etched to form a first heterojunction structure 1031 and a second heterojunction structure 1032. The first heterojunction structure 1031 includes at least one AlGaN / GaN heterojunction, and the second heterojunction structure 1032 includes n AlGaN / GaN heterojunctions stacked along a first direction. Optionally, the first heterojunction structure 1031 may include only one AlGaN / GaN heterojunction.

[0061] A P-type doped GaN layer 105 is epitaxially formed on the side of the AlGaN / GaN heterojunction structure away from the substrate 101.

[0062] Selective etching is performed on the P-type doped GaN layer 105 to form a first P-type doped GaN layer 1051 and a second P-type doped GaN layer 1052. The first P-type doped GaN layer 1051 is located on the side of the first heterojunction structure 1031 away from the substrate 101, and the second P-type doped GaN layer 1052 is located on the side of the second heterojunction structure 1032 away from the substrate 101.

[0063] A first electrode 1041, a second electrode 1043, a metal connection portion 1042, and a gate electrode 1044 are deposited. The first electrode 1041 is connected to one end of the first heterojunction structure 1031, the metal connection portion 1042 is connected to the other end of the first heterojunction structure 1031 and to one end of the second heterojunction structure 1032, the second electrode 1043 is connected to the other end of the second heterojunction structure 1043, and the gate electrode 1044 is located on the side of the first P-type doped GaN layer 1051 away from the substrate 101.

[0064] This invention combines enhancement-mode HEMT devices and depletion-mode HEMT devices, enabling the depletion-mode HEMT device to possess the normally-off performance of the enhancement-mode HEMT device while also providing a simplified gate drive. Simultaneously, it allows the low-voltage enhancement-mode HEMT device to operate under high voltage; when the device is off, the high voltage primarily drops across the depletion-mode HEMT device. Furthermore, by using series-connected enhancement-mode HEMT devices, the device is kept off at zero bias, effectively improving the reliability of the enhancement-mode HEMT device.

[0065] Figure 5 This diagram illustrates the steps of a common-gate, common-source multichannel gallium nitride (GaN) HEMT device fabrication method according to another embodiment of the present invention. Further, as... Figure 5 As shown, prior to the step of depositing the first electrode 1041, the second electrode 1043, the metal connection portion 1042, and the gate electrode 1044, the following step is further included:

[0066] A P-type doped AlGaN layer 1061 is selectively epitaxially grown on the side of the first heterojunction structure 1031 away from the substrate 101, and the projection of the P-type doped AlGaN layer 1061 on the substrate 101 does not overlap with the projection of the first P-type doped GaN layer 1061 on the substrate 101.

[0067] Selective ion implantation is performed on the P-type doped AlGaN layer 1061 to obtain an N-type doped region 1062, which is located on the side of the P-type doped AlGaN layer 1061 away from the gate electrode 1044.

[0068] Furthermore, the step of depositing the first electrode 1041, the second electrode 1043, the metal connection portion 1042, and the gate electrode 1044 further includes:

[0069] Simultaneously, a third electrode 1045 is deposited on the side of the P-type doped AlGaN layer 1061 away from the substrate 101. The projection of the third electrode 1045 on the substrate 101 does not overlap with the projection of the N-type doped region 1062 on the substrate, thus electrically connecting the first electrode 1041 and the third electrode 1045. By employing a junction field plate in the gate region, the breakdown voltage of the P-GaN gate region is improved.

[0070] This invention also provides an electronic device, including the common-gate common-source multichannel gallium nitride HEMT device as described above.

[0071] When the semiconductor device of the electronic device is the aforementioned common-gate common-source multichannel gallium nitride HEMT device, the reverse voltage is jointly borne by the multichannel high-voltage D-mode structure and the heterojunction field plate, protecting the gate from the influence of the high electric field, which can effectively improve the working reliability of the semiconductor device.

[0072] The electronic device can be a terminal or other devices besides a terminal. For example, the electronic device can be a mobile phone, tablet computer, laptop computer, handheld computer, in-vehicle electronic device, mobile internet device (MID), augmented reality (AR) / virtual reality (VR) device, robot, wearable device, ultra-mobile personal computer (UMPC), netbook, or personal digital assistant (PDA), etc. It can also be a server, network attached storage (NAS), personal computer (PC), television (TV), ATM, or self-service machine, etc. The embodiments of the present invention do not make specific limitations.

[0073] Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A common-gate, common-source multichannel gallium nitride HEMT device, characterized in that, include: Substrate; A buffer layer located on one side of the substrate; A first heterojunction structure and a second heterojunction structure are located on the side of the buffer layer away from the substrate. The first heterojunction structure includes at least one AlGaN / GaN heterojunction, and the second heterojunction structure includes multiple AlGaN / GaN heterojunctions stacked along a first direction, wherein the first direction is perpendicular to the substrate. The first electrode is connected to one end of the first heterojunction structure. A metal connection portion, which is connected to the other end of the first heterojunction structure and to one end of the second heterojunction structure; The second electrode is connected to the other end of the second heterojunction structure; The gate electrode is located on the side of the first heterojunction structure away from the substrate. The side of the first heterojunction structure away from the substrate also includes an AlGaN doped layer, and the projection of the AlGaN doped layer on the substrate does not overlap with the projection of the gate electrode on the substrate. The AlGaN doped layer includes a third electrode on the side away from the substrate, and the first electrode is electrically connected to the third electrode.

2. The common-gate, common-source multichannel gallium nitride HEMT device as described in claim 1, characterized in that: A first P-type doped GaN layer is provided between the gate electrode and the first heterojunction structure.

3. The common-gate, common-source multichannel gallium nitride HEMT device as described in claim 2, characterized in that: The second heterojunction structure has a second P-type doped GaN layer on the side away from the substrate.

4. The common-gate, common-source multichannel gallium nitride HEMT device as described in claim 1, characterized in that: The projection of the first heterojunction structure onto the substrate does not overlap with the projection of the second heterojunction structure onto the substrate.

5. A common-gate, common-source multichannel gallium nitride HEMT device as described in claim 1, characterized in that: The AlGaN doped layer includes a P-type doped region and an N-type doped region; The P-type doped region is connected to the third electrode, and the N-type doped region is connected to the metal connection portion.

6. An electronic device, characterized in that, Includes a common-gate common-source multichannel gallium nitride HEMT device as described in any one of claims 1-5.

7. A method for manufacturing a common-gate, common-source multichannel gallium nitride HEMT device, characterized in that, Includes the following steps: Provide substrates; A GaN buffer layer is grown on the substrate, the GaN buffer layer including a first surface, the first surface being the side of the GaN buffer layer away from the substrate; n AlGaN / GaN heterojunction structures are sequentially grown on the first surface along a first direction, wherein the first direction is perpendicular to the substrate. Selective etching is performed on the n-layer AlGaN / GaN heterojunction structure to form a first heterojunction structure and a second heterojunction structure, wherein the first heterojunction structure includes at least one AlGaN / GaN heterojunction, and the second heterojunction structure includes n AlGaN / GaN heterojunctions stacked along a first direction. A P-type doped GaN layer is epitaxially grown on the side of the AlGaN / GaN heterojunction structure away from the substrate. Selective etching is performed on the P-type doped GaN layer to form a first P-type doped GaN layer and a second P-type doped GaN layer. The first P-type doped GaN layer is located on the side of the first heterojunction structure away from the substrate, and the second P-type doped GaN layer is located on the side of the second heterojunction structure away from the substrate. A P-type doped AlGaN layer is selectively epitaxially grown on the side of the first heterojunction structure away from the substrate, and the projection of the P-type doped AlGaN layer on the substrate does not overlap with the projection of the first P-type doped GaN layer on the substrate. Selective ion implantation is performed on the P-type doped AlGaN layer to obtain an N-type doped region, which is located on the side of the P-type doped AlGaN layer away from the gate electrode. A first electrode, a second electrode, a metal connection portion, and a gate electrode are deposited, wherein the first electrode is connected to one end of the first heterojunction structure, the metal connection portion is connected to the other end of the first heterojunction structure and to one end of the second heterojunction structure, the second electrode is connected to the other end of the second heterojunction structure, and the gate electrode is located on the side of the first P-type doped GaN layer away from the substrate.

8. The manufacturing method as described in claim 7, characterized in that, The step of depositing the first electrode, the second electrode, the metal connector, and the gate electrode further includes: Simultaneously, a third electrode is deposited on the side of the P-type doped AlGaN layer away from the substrate. The projection of the third electrode on the substrate does not overlap with the projection of the N-type doped region on the substrate, and the first electrode and the third electrode are electrically connected.

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