A perovskite quantum dot solar cell and its fabrication method

Abstract

This invention provides a perovskite quantum dot solar cell and its preparation method. The method includes: a conductive glass, on which an electron transport layer, a light-absorbing layer, a hole layer, and a metal anode are sequentially deposited. This invention utilizes lead salt modification and vacuum drying to reduce damage to the perovskite quantum dot film. This method is simple, efficient, and reproducible, effectively passivating surface defects in the perovskite quantum dots and increasing the density of the perovskite quantum dot film, reducing non-radiative recombination of charge carriers. Simultaneously, it improves the photogenerated charge transport capability in the quantum dot film, increasing the open-circuit voltage and short-circuit current of the perovskite quantum dot solar cell, resulting in a high-performance perovskite quantum dot solar cell. The perovskite quantum dot film prepared by this method has good density and high coverage, significantly improving the quality of the quantum dot film. Furthermore, the reaction conditions are easy to control, reproducible, and the equipment is simple, facilitating its application in practical production.

Description

Technical Field

[0001] This invention belongs to the field of perovskite solar cell fabrication, specifically relating to a perovskite quantum dot solar cell and its fabrication method. Background Technology

[0002] Metal halide perovskite materials possess excellent photoelectric properties, including high absorption coefficients, low exciton binding energies, long carrier diffusion lengths, and bipolar transport effects. Over the past decade, the photoelectric conversion efficiency of perovskite-based solar cells has surged from an initial 3.8% to 25.7%. However, the accelerated decomposition of halide perovskite materials under harsh conditions such as high temperature, high humidity, and strong light exposure leads to poor device stability, hindering their further commercialization.

[0003] When the size of perovskite materials approaches the Bohr radius, unique quantum effects emerge, the most prominent of which is the multiexciton effect. As a newly emerging and rapidly developing research field, the efficiency of perovskite quantum dot solar cells has increased dramatically from 10.8% to over 17.4% in a short period of time, demonstrating enormous application potential.

[0004] Perovskite quantum dots are currently mainly synthesized via the hot-injection method, using long-chain organic ligands oleic acid (OA) and oleylamine (OAm) as end-capping ligands. During solution deposition of quantum dot films, these long-chain insulating ligands severely impede carrier transport. Furthermore, numerous surface defects are generated during quantum dot film cleaning and ligand exchange, which trap the generated photocharge, thus degrading device performance. Therefore, it is necessary to explore new perovskite quantum dot film deposition methods to improve film quality and thereby enhance the performance of perovskite quantum dot solar cells. Currently, there are few reports on the fabrication of high-performance perovskite quantum dot solar cells based on high-quality quantum dot film deposition. Therefore, developing a method for non-destructive deposition of high-quality quantum dot films for the fabrication of high-performance perovskite quantum dot solar cells is particularly important. Summary of the Invention

[0005] This invention addresses the shortcomings of existing perovskite quantum dot solar cells and their fabrication processes by providing a perovskite quantum dot solar cell and its fabrication method that can effectively improve the quality of perovskite quantum dot thin films, thereby increasing open-circuit voltage, device photoelectric conversion efficiency, and environmental stability.

[0006] To achieve the above objectives, the perovskite quantum dot solar cell of the present invention includes a conductive glass substrate, and an electron transport layer, a perovskite quantum dot thin film light-absorbing layer, a hole transport layer and a metal anode deposited thereon from bottom to top.

[0007] The light-absorbing layer of the perovskite quantum dot film is a cubic perovskite structure quantum dot film modified with lead salt and vacuum dried.

[0008] The present invention discloses a method for preparing perovskite quantum dot solar cells, comprising the following steps:

[0009] 1) Fabrication of an electron transport layer on a conductive glass substrate;

[0010] 2) Perovskite quantum dot films were deposited on the electron transport layer by spin coating at a speed of 1000 rpm to 2000 rpm.

[0011] 3) The perovskite quantum dot film was treated with a lead salt methyl acetate solution by dripping or soaking for 1-20 seconds and then dried by vacuum pumping.

[0012] 4) Repeat steps 2) to 3) 1 to 10 times to obtain a perovskite quantum dot film light-absorbing layer with a thickness of 50 to 600 nm.

[0013] 5) An organic hole material solution was spin-coated onto the light-absorbing layer of a perovskite quantum dot thin film to obtain a hole transport layer with a thickness of 40–300 nm.

[0014] 6) A metal anode with a thickness of 50-200 nm is deposited on the hole transport layer to obtain a perovskite quantum dot solar cell.

[0015] The conductive glass substrate is indium tin oxide (ITO) or fluorine-doped tin oxide (FTO).

[0016] The electron transport layer material is TiO2 or SnO2, and the thickness of the electron transport layer is 10-200 nm.

[0017] The lead salt mentioned is one of lead nitrate, lead acetate, lead thiocyanate, lead sulfate, or lead iodide.

[0018] The methyl acetate solution of the lead salt is a saturated lead salt solution of methyl acetate.

[0019] The drying in step 3) is carried out under a vacuum of 1×10⁻⁶. 4 Pa ~ 1×10 5 Pa vacuum drying.

[0020] The hole transport layer material is Spiro-OMeTAD.

[0021] The metal anode material is one of Al, Ag or Au.

[0022] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0023] 1. This invention utilizes lead salt treatment of perovskite quantum dot thin films, which can passivate quantum dot surface defects, reduce non-radiative recombination, and increase the open-circuit voltage of perovskite quantum dot solar cells. The photoelectric conversion efficiency and environmental stability of the device are significantly improved.

[0024] 2. This invention uses a vacuum pumping method to dry perovskite quantum dot films, which can reduce the damage to the morphology of quantum dot films caused by the deposition process and achieve the goal of depositing high-quality quantum dot films without damage.

[0025] 3. The technical solution of this invention effectively improves the reproducibility of high-efficiency perovskite quantum dot solar cells, thereby reducing the manufacturing cost of high-efficiency cells. Attached Figure Description

[0026] Figure 1 A schematic diagram of the device structure of the perovskite quantum dot solar cell provided by the present invention;

[0027] In the figure, 1. Conductive glass substrate; 2. Electron transport layer; 3. Perovskite quantum dot thin film light-absorbing layer; 4. Hole transport layer; 5. Metal electrode.

[0028] Figure 2 The current density-voltage (JV) curve of the perovskite quantum dot solar cell prepared in Example 1 is shown.

[0029] Figure 3 The current density-voltage (JV) curve of the perovskite quantum dot solar cell prepared in Example 2 is shown.

[0030] Figure 4 The current density-voltage (JV) curve of the perovskite quantum dot solar cell prepared in Example 3 is shown.

[0031] Figure 5 The current density-voltage (JV) curve is shown for the perovskite quantum dot solar cell prepared in Example 4.

[0032] Figure 6 The current density-voltage (JV) curve is shown for the perovskite quantum dot solar cell prepared in Example 5.

[0033] Figure 7 The current density-voltage (JV) curves of the perovskite quantum dot solar cell prepared in Comparative Example 1 are shown.

[0034] Figure 8 The graphs show the stability test results of the perovskite quantum dot solar cell devices prepared in Example 4 and Comparative Example 1. Detailed Implementation

[0035] The technical solution of the present invention will be further described below with reference to the accompanying drawings and embodiments.

[0036] This invention provides a perovskite quantum dot solar cell, with the structure as follows: Figure 1 As shown, an electron transport layer 2, a perovskite quantum dot thin film light-absorbing layer 3, a hole transport layer 4, and a metal electrode 5 are sequentially fabricated on a conductive glass substrate 1; the specific fabrication steps are as follows:

[0037] 1) Fluorine-doped tin oxide (FTO) or indium-doped tin oxide (ITO) conductive glass substrate 1 was ultrasonically treated in detergent water, deionized water, ethanol and acetone for 15 min in sequence. Then, it was immersed in 40 mM TiCl4 or SnO2 solution and chemically deposited at 70 °C for 30 min. After washing with deionized water and ethanol, it was annealed at 200 °C for 30 min to obtain a TiO2 or electron transport layer 2 with a thickness of 10-200 nm on the fluorine-doped tin oxide (FTO) or indium-doped tin oxide (ITO) conductive glass substrate 1.

[0038] 2) Transfer the fluorine-doped tin oxide (FTO) or indium-doped tin oxide (ITO) conductive glass substrate 1 from step 1) to a glove box with a dry air atmosphere. Spin-coat a 75 mg / mL solution of FAPbI3 quantum dots in n-octane onto the electron transport layer 2 at a spin-coating speed of 1000 rpm to 2000 rpm.

[0039] 3) Perovskite quantum dot films were treated with a saturated solution of methyl acetate containing lead nitrate, lead acetate, lead sulfate, lead thiocyanate, and lead iodide by dripping or immersion for 1–20 seconds, followed by treatment under a vacuum of 1 × 10⁻⁶. 4 Pa ~ 1×10 5 Pa vacuum drying;

[0040] 4) Repeat steps 2) to 3) 1 to 10 times to obtain a perovskite quantum dot film light-absorbing layer 3 with a thickness of 50 to 600 nm;

[0041] 5) Spiro-OMeTAD organic hole material (72.3 mg) was dissolved in 1 mL of chlorobenzene, and 28.8 μL of 4-TBP and 17.5 μL of Li-TFSI solution were added. The solution was then spin-coated onto the light-absorbing layer 3 of the perovskite quantum dot film at a speed of 4000 rpm to obtain a hole transport layer 4 with a thickness of 40-300 nm.

[0042] 6) An Al, Ag, or Au metal anode 5 with a thickness of 50–200 nm is deposited on the hole transport layer 4 to obtain a perovskite quantum dot solar cell.

[0043] Example 1:

[0044] 1) Fluorine-doped tin oxide FTO conductive glass substrate 1 was ultrasonically treated in detergent water, deionized water, ethanol and acetone for 15 min in sequence. Then, it was immersed in 40 mM TiCl4 solution and chemically deposited at 70 °C for 30 min. After washing with deionized water and ethanol, it was annealed at 200 °C for 30 min to obtain a TiO2 electron transport layer 2 with a thickness of 10-200 nm on fluorine-doped tin oxide FTO conductive glass substrate 1.

[0045] 2) Transfer the fluorine-doped tin oxide (FTO) conductive glass substrate 1 from step 1) to a glove box with a dry air atmosphere. Spin-coat a 75 mg / mL solution of FAPbI3 quantum dots in n-octane onto the electron transport layer 2 at a spin speed of 1000 rpm-2000 rpm.

[0046] 3) After treating the perovskite quantum dot film with a saturated lead nitrate solution of methyl acetate by dropping or immersion for 1–20 seconds, it is then subjected to a vacuum of 8 × 10⁻⁶. 4 Pa vacuum drying;

[0047] 4) Repeat steps 2) to 3) 1 to 10 times to obtain a perovskite quantum dot film light-absorbing layer 3 with a thickness of 50 to 600 nm;

[0048] 5) Spiro-OMeTAD organic hole material (72.3 mg) was dissolved in 1 mL of chlorobenzene, and 28.8 μL of 4-TBP and 17.5 μL of Li-TFSI solution were added. The solution was then spin-coated onto the light-absorbing layer 3 of the perovskite quantum dot film at a speed of 4000 rpm to obtain a hole transport layer 4 with a thickness of 40-300 nm.

[0049] 6) An Ag metal anode 5 with a thickness of 50-200 nm is deposited on the hole transport layer 4 to obtain a perovskite quantum dot solar cell.

[0050] See appendix Figure 2 This is the current density-voltage (JV) curve of the solar cell using lead nitrate-vacuum drying to treat the FAPbI3 quantum dot light-absorbing layer, provided in this embodiment; at AM 1.5G, 100mW / cm² 2 Under standard test conditions, the measured short-circuit current density of the device was 9.27 mA / cm². 2 The open-circuit voltage is 1.13V, the fill factor is 60.52%, and the photoelectric conversion efficiency is 6.34%.

[0051] Example 2:

[0052] 1) Fluorine-doped tin oxide FTO conductive glass substrate 1 was ultrasonically treated in detergent water, deionized water, ethanol and acetone for 15 min in sequence. Then, it was immersed in 40 mM TiCl4 solution and chemically deposited at 70 °C for 30 min. After washing with deionized water and ethanol, it was annealed at 200 °C for 30 min to obtain a TiO2 electron transport layer 2 with a thickness of 10-200 nm on fluorine-doped tin oxide FTO conductive glass substrate 1.

[0053] 2) Transfer the fluorine-doped tin oxide (FTO) conductive glass substrate 1 from step 1) to a glove box with a dry air atmosphere. Spin-coat a 75 mg / mL solution of FAPbI3 quantum dots in n-octane onto the electron transport layer 2 at a spin speed of 1000 rpm-2000 rpm.

[0054] 3) After treating the perovskite quantum dot film with a saturated lead acetate solution of methyl acetate by dropping or immersion for 1–20 seconds, it is then subjected to a vacuum of 8 × 10⁻⁶. 4 Pa vacuum drying;

[0055] 4) Repeat steps 2) to 3) 1 to 10 times to obtain a perovskite quantum dot film light-absorbing layer 3 with a thickness of 50 to 600 nm;

[0056] 5) Spiro-OMeTAD organic hole material (72.3 mg) was dissolved in 1 mL of chlorobenzene, and 28.8 μL of 4-TBP and 17.5 μL of Li-TFSI solution were added. The solution was then spin-coated onto the light-absorbing layer 3 of the perovskite quantum dot film at a speed of 4000 rpm to obtain a hole transport layer 4 with a thickness of 40-300 nm.

[0057] 6) An Ag metal anode 5 with a thickness of 50-200 nm is deposited on the hole transport layer 4 to obtain a perovskite quantum dot solar cell.

[0058] See appendix Figure 3 This is the current density-voltage (JV) curve of the solar cell using lead acetate-vacuum drying to treat the FAPbI3 quantum dot light-absorbing layer, provided in this embodiment; at AM 1.5G, 100mW / cm² 2 Under standard test conditions, the measured short-circuit current density of the device was 8.80 mA / cm². 2 The open-circuit voltage is 1.06V, the fill factor is 61.16%, and the photoelectric conversion efficiency is 5.71%.

[0059] Example 3:

[0060] 1) Fluorine-doped tin oxide FTO conductive glass substrate 1 was ultrasonically treated in detergent water, deionized water, ethanol and acetone for 15 min in sequence. Then, it was immersed in 40 mM TiCl4 solution and chemically deposited at 70 °C for 30 min. After washing with deionized water and ethanol, it was annealed at 200 °C for 30 min to obtain a TiO2 electron transport layer 2 with a thickness of 10-200 nm on fluorine-doped tin oxide FTO conductive glass substrate 1.

[0061] 2) Transfer the fluorine-doped tin oxide (FTO) conductive glass substrate 1 from step 1) to a glove box with a dry air atmosphere. Spin-coat a 75 mg / mL solution of FAPbI3 quantum dots in n-octane onto the electron transport layer 2 at a spin speed of 1000 rpm-2000 rpm.

[0062] 3) After treating the perovskite quantum dot film with a saturated lead sulfate solution of methyl acetate by dropping or immersion for 1–20 seconds, it is then subjected to a vacuum of 8 × 10⁻⁶. 4 Pa vacuum drying;

[0063] 4) Repeat steps 2) to 3) 1 to 10 times to obtain a perovskite quantum dot film light-absorbing layer 3 with a thickness of 50 to 600 nm;

[0064] 5) Spiro-OMeTAD organic hole material (72.3 mg) was dissolved in 1 mL of chlorobenzene, and 28.8 μL of 4-TBP and 17.5 μL of Li-TFSI solution were added. The solution was then spin-coated onto the light-absorbing layer 3 of the perovskite quantum dot film at a speed of 4000 rpm to obtain a hole transport layer 4 with a thickness of 40-300 nm.

[0065] 6) An Ag metal anode 5 with a thickness of 50-200 nm is deposited on the hole transport layer 4 to obtain a perovskite quantum dot solar cell.

[0066] See appendix Figure 4 This is the current density-voltage (JV) curve of the solar cell using lead sulfate-vacuum drying treatment of the FAPbI3 quantum dot light-absorbing layer provided in this embodiment; at AM 1.5G, 100mW / cm 2 Under standard test conditions, the measured short-circuit current density of the device was 14.36 mA / cm². 2 The open-circuit voltage is 1.10V, the fill factor is 63.50%, and the photoelectric conversion efficiency is 10.03%.

[0067] Example 4:

[0068] 1) Fluorine-doped tin oxide FTO conductive glass substrate 1 was ultrasonically treated in detergent water, deionized water, ethanol and acetone for 15 min in sequence. Then, it was immersed in 40 mM TiCl4 solution and chemically deposited at 70 °C for 30 min. After washing with deionized water and ethanol, it was annealed at 200 °C for 30 min to obtain a TiO2 electron transport layer 2 with a thickness of 10-200 nm on fluorine-doped tin oxide FTO conductive glass substrate 1.

[0069] 2) Transfer the fluorine-doped tin oxide (FTO) conductive glass substrate 1 from step 1) to a glove box with a dry air atmosphere. Spin-coat a 75 mg / mL solution of FAPbI3 quantum dots in n-octane onto the electron transport layer 2 at a spin speed of 1000 rpm-2000 rpm.

[0070] 3) After dripping or immersing the perovskite quantum dot film in a saturated lead thiocyanate solution of methyl acetate for 1–20 seconds, it is then subjected to a vacuum of 8 × 10⁻⁶. 4 Pa vacuum drying;

[0071] 4) Repeat steps 2) to 3) 1 to 10 times to obtain a perovskite quantum dot film light-absorbing layer 3 with a thickness of 50 to 600 nm;

[0072] 5) Spiro-OMeTAD organic hole material (72.3 mg) was dissolved in 1 mL of chlorobenzene, and 28.8 μL of 4-TBP and 17.5 μL of Li-TFSI solution were added. The solution was then spin-coated onto the light-absorbing layer 3 of the perovskite quantum dot film at a speed of 4000 rpm to obtain a hole transport layer 4 with a thickness of 40-300 nm.

[0073] 6) An Ag metal anode 5 with a thickness of 50-200 nm is deposited on the hole transport layer 4 to obtain a perovskite quantum dot solar cell.

[0074] See appendix Figure 5 This is the current density-voltage (JV) curve of the solar cell using lead thiocyanate-vacuum dried FAPbI3 quantum dot light-absorbing layer provided in this embodiment; at AM 1.5G, 100mW / cm 2 Under standard test conditions, the measured short-circuit current density of the device was 16.17 mA / cm². 2 The open-circuit voltage is 1.12V, the fill factor is 66.06%, and the photoelectric conversion efficiency is 11.96%. Thanks to the surface repair effect of lead thiocyanate, the resulting perovskite quantum dot solar cell device not only exhibits excellent device efficiency but also good stability, maintaining over 70% efficiency after 21 days of storage in dry air (e.g., ...). Figure 8 (As shown).

[0075] Example 5:

[0076] 1) Fluorine-doped tin oxide FTO conductive glass substrate 1 was ultrasonically treated in detergent water, deionized water, ethanol and acetone for 15 min in sequence. Then, it was immersed in 40 mM TiCl4 solution and chemically deposited at 70 °C for 30 min. After washing with deionized water and ethanol, it was annealed at 200 °C for 30 min to obtain a TiO2 electron transport layer 2 with a thickness of 10-200 nm on fluorine-doped tin oxide FTO conductive glass substrate 1.

[0077] 2) Transfer the fluorine-doped tin oxide (FTO) conductive glass substrate 1 from step 1) to a glove box with a dry air atmosphere. Spin-coat a 75 mg / mL solution of FAPbI3 quantum dots in n-octane onto the electron transport layer 2 at a spin speed of 1000 rpm-2000 rpm.

[0078] 3) After treating the perovskite quantum dot film with a saturated lead iodide solution of methyl acetate by dropping or immersion for 1–20 seconds, it is then subjected to a vacuum of 8 × 10⁻⁶. 4 Pa vacuum drying;

[0079] 4) Repeat steps 2) to 3) 1 to 10 times to obtain a perovskite quantum dot film light-absorbing layer 3 with a thickness of 50 to 600 nm;

[0080] 5) Spiro-OMeTAD organic hole material (72.3 mg) was dissolved in 1 mL of chlorobenzene, and 28.8 μL of 4-TBP and 17.5 μL of Li-TFSI solution were added. The solution was then spin-coated onto the light-absorbing layer 3 of the perovskite quantum dot film at a speed of 4000 rpm to obtain a hole transport layer 4 with a thickness of 40-300 nm.

[0081] 6) An Ag metal anode 5 with a thickness of 50-200 nm is deposited on the hole transport layer 4 to obtain a perovskite quantum dot solar cell.

[0082] See appendix Figure 6 This is the current density-voltage (JV) curve of the solar cell using lead iodide-vacuum drying treatment of the FAPbI3 quantum dot light-absorbing layer provided in this embodiment; at AM 1.5G, 100mW / cm 2 Under standard test conditions, the measured short-circuit current density of the device was 12.66 mA / cm². 2 The open-circuit voltage is 1.08V, the fill factor is 63.21%, and the photoelectric conversion efficiency is 8.64%.

[0083] Comparative Example 1

[0084] This comparative example provides a perovskite quantum dot solar cell, with the structure as follows: Figure 1 As shown, the specific preparation steps are as follows:

[0085] Step 1: The FTO conductive glass was ultrasonically treated sequentially in detergent water, deionized water, ethanol, and acetone for 15 min each. Then, the substrate was immersed in a 40 mM TiCl4 solution and chemically deposited at 70 °C for 30 min. The substrate was then washed with deionized water and ethanol and annealed at 200 °C for 30 min.

[0086] Step 2: Transfer the FTO / TiO2 substrate to a glove box with a dry air atmosphere; spin-coat a 75 mg / mL solution of FAPbI3 quantum dots in n-octane onto the FTO / TiO2 substrate at a spin speed of 1000 rpm–2000 rpm; then subject the prepared perovskite quantum dot film to a drop-drip treatment using a methyl acetate solution for 5–10 s; and finally vacuum dry the film (vacuum degree 8 × 10⁻⁶). 4 Pa); The above spin-coating-drip-drying process was repeated 5 times to obtain a film of sufficient thickness;

[0087] Step 3: Dissolve Spiro-OMeTAD (72.3 mg) in 1 mL of chlorobenzene, add 28.8 μL of 4-TBP and 17.5 μL of Li-TFSI solution, and spin-coat the solution onto the FAPbI3 quantum dot film at 4000 rpm for 30 s.

[0088] Step 4: Deposit a silver electrode using a thermal evaporation method.

[0089] See appendix Figure 7 This is a comparative example of the current density-voltage (JV) curve of a solar cell with a lead-free salt-vacuum-dried FAPbI3 quantum dot light-absorbing layer; at AM 1.5G, 100mW / cm². 2 Under standard test conditions, the measured short-circuit current density of the device was 8.07 mA / cm². 2 The open-circuit voltage is 1.03V, the fill factor is 58.49%, and the photoelectric conversion efficiency is 4.86%. For example... Figure 8 As shown, after being stored in dry air for 21 days, it can only maintain about 40% of its efficiency.

Claims

1. A method for preparing a perovskite quantum dot solar cell, characterized in that The method comprises the following steps: 1) preparing an electron transport layer (2) on a conductive glass substrate (1); 2) depositing a perovskite quantum dot film on the electron transport layer (2) by spin coating at a speed of 1000 rpm-2000 rpm; 3) treating the perovskite quantum dot film with a methyl acetate solution of lead salt by dripping or soaking for 1-20 s and then drying by vacuum pumping; 4) repeating steps 2)-3) for 1-10 times to obtain a perovskite quantum dot film light-absorbing layer (3) with a thickness of 50-600 nm; 5) spin coating an organic hole material solution on the perovskite quantum dot film light-absorbing layer (3) to obtain a hole transport layer (4) with a thickness of 40-300 nm; 6) evaporating a metal anode (5) with a thickness of 50-200 nm on the hole transport layer (4) to obtain a perovskite quantum dot solar cell.

2. The method for preparing a perovskite quantum dot solar cell according to claim 1, characterized in that: The conductive glass substrate (1) is indium-doped tin oxide (ITO) or fluorine-doped tin oxide (FTO).

3. The method for preparing a perovskite quantum dot solar cell according to claim 1, characterized in that: The electron transport layer material is TiO2 or SnO2, and the thickness of the electron transport layer is 10-200 nm.

4. The method for preparing a perovskite quantum dot solar cell according to claim 1, characterized in that: The lead salt is one of lead nitrate, lead acetate, lead thiocyanate, lead sulfate or lead iodide.

5. The method of claim 1, wherein the method further comprises: The methyl acetate solution of the lead salt is a saturated lead salt solution of methyl acetate.

6. The method for preparing a perovskite quantum dot solar cell according to claim 1, characterized in that: The drying of step 3) is performed at a vacuum degree of 1 x 10 -4 Pa ~ 1 x 10 -5 Pa vacuum air-drying.

7. The method of claim 1, wherein the method further comprises: The hole transport layer material is Spiro-OMeTAD.

8. The method for preparing a perovskite quantum dot solar cell according to claim 1, characterized in that: The metal anode material is one of Al, Ag or Au.

9. A perovskite quantum dot solar cell prepared by the method of any one of claims 1-8, characterized in that: The perovskite quantum dot solar cell comprises a conductive glass substrate (1), and an electron transport layer (2), a perovskite quantum dot film light-absorbing layer (3), a hole transport layer (4) and a metal anode (5) deposited on the conductive glass substrate (1) in sequence from bottom to top.

10. The perovskite quantum dot solar cell of claim 9, wherein: The perovskite quantum dot film light-absorbing layer (3) is a cubic phase perovskite structure quantum dot film modified by a lead salt and dried by vacuum drying.

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