Highly efficient compatible quantum Hall resistance sample

Abstract

The present invention relates to a highly efficient and compatible quantum Hall resistance sample, which includes a substrate and also two sample main bodies. The two sample main bodies are arranged side by side on the substrate. Any one of the sample main bodies includes: a plurality of electrodes, which are divided into a plurality of side electrodes and two end electrodes. The plurality of side electrodes are arranged on two sides of the sample main body, and the two end electrodes are respectively arranged at both ends of the sample main body. In the present invention, the quantum Hall resistance sample can have multiple resistance values, enabling a single sample to have multiple resistance values, improving the functionality and compatibility of the quantum Hall resistance sample. At the same time, the two sample main bodies can be used separately, greatly improving the yield rate during the product production process and enhancing the stability and reliability of the product.

Description

Technical Field

[0001] The present invention relates to the technical field of quantized Hall resistance, and particularly to a highly efficient compatible quantized Hall resistance sample. Background Art

[0002] A quantized Hall resistance sample (generally in the form of a semiconductor material chip) can exhibit the quantized Hall resistance effect in a certain magnetic field and ultra-low temperature environment (<1.6K), as Figure 1 shown. If the material, manufacturing process, and environmental processes such as cooling of the device meet good technical specifications, the device can be in a completely quantized state in several magnetic field intervals, and this interval is called a quantum platform.

[0003] Taking the gallium arsenide superlattice heterojunction type material that conventionally realizes this quantum effect as an example, the general effective magnetic field working range is 0-12T. On the Figure 1 material shown, it can be clearly seen that the i = 2 quantum platform interval is (8T - 10.5T), the i = 3 quantum platform interval is (5.7T - 6.4T), and the i = 4 quantum platform interval is (4.3T - 5T). In addition, there is also an i = 1 quantum platform, and the interval is about (16T - 20T). In these magnetic field intervals, the Hall voltage of the device divided by the current is basically a constant value and does not change with external conditions such as magnetic field or temperature, so it can be used as a quantum resistance.

[0004] For a more accurate study, it is known from basic physical theory analysis that when the filling factor i is odd, there are extra electron spin splitting energy levels, the quantization state is incomplete, and the weak splitting of the energy levels will cause the inaccuracy of the quantum platform accuracy. Only when the filling factor is even (i = 2, 4, 6, etc.), the quantum platform may be in a completely quantized state.

[0005] From the perspective of metrology practice, the width of the i = 2 quantum platform is relatively wide, the quantum reference resistance value is relatively high, and the signal-to-noise ratio is relatively high. Therefore, internationally, the i = 2 quantum platform is generally preferred as the metrology reference resistance value (RH = 12906.4035) for use. The measurement range and accuracy of the general metrology instruments used in combination are designed with this resistance value as the core.

[0006] In the industry, it is generally believed that a magnetic field less than or equal to 6T is called a high field, and a magnetic field greater than 6T is called a low field. The realization conditions for high fields are relatively high, and there are certain safety risks. Low fields are relatively easy to achieve, and the safety risks are significantly reduced. Therefore, realizing a low-field quantum resistance chip is of great significance for popularizing the application of this product. Currently, there are mainly two types of materials available for quantum Hall resistance metrology. One is gallium arsenide-based materials, and the other is graphene-based materials. Some of the graphene-based materials can work in low fields, but this material cannot be produced in China, and it is also rarely found internationally that meets the technical requirements. Moreover, the fabrication of devices is very difficult, the comprehensive cost is extremely high, and the measurement process is complex. The technology of gallium arsenide-based materials is mature and reliable, and can be universalized, but the general working range is high field (8T - 10T).

[0007] In the prior art, the structural design of a quantum Hall resistance sample (resistance metrology standard device) that meets the metrology standard is divided into three steps:

[0008] (1) Functional design under a given size;

[0009] (2) Main body graphic structure design;

[0010] (3) Electrode graphic design that meets the given function under a given size.

[0011] First of all, the given size refers to that the effective length of the sample area does not exceed 10mm (2.54mm * 4, referring to the central area of the TO-8 international standard socket), such as Figure 2 the concave area shown in the left figure. A larger base can use a sample with a larger structure, and the electrode graphic design described later will not be limited by the size. However, there are three disadvantages in designing a larger size: A) The TO-8 size socket is a generally recognized universal size for international quantum Hall resistance samples in metrology institutions. Although it is easier to design a sample with a larger size, it cannot be universal. B) A larger size places higher requirements on the magnetic field uniformity of the sample chamber of the ultra-low temperature constant temperature instrument. C) When the sample size is too large, material defects and non-uniformities increase.

[0012] On the above premise, the three steps of the existing generally recognized quantum Hall resistance (QHR) sample design are respectively:

[0013] (1) Functional design under a given size: single sample design or parallel-series design, to complete the function of reproducing a single value under the designed magnetic field. Technical explanation, the single sample design refers to the standard QHR sample as Figure 2 shown, and the electrode distribution presents a "rich" character structure. However, it still has several disadvantages, such as:

[0014] A) The value is single under the designed magnetic field;

[0015] B) The number of electrodes is 8 (standard). If various types of failures occur to some electrodes (with a certain probability), the entire sample fails, so the reliability is relatively low. Summary of the Invention

[0016] The present invention provides an efficiently compatible quantized Hall resistance sample, which can improve the yield rate in the product production process and ensure the stability and reliability of the product.

[0017] The present invention provides an efficiently compatible quantized Hall resistance sample, including a substrate, and further including two sample main bodies. The two sample main bodies are arranged in parallel on the substrate. Any one of the sample main bodies includes:

[0018] A plurality of electrodes, which are divided into a plurality of side electrodes and two end electrodes. The plurality of side electrodes are arranged on two sides of the sample main body, and the two end electrodes are respectively arranged at both ends of the sample main body.

[0019] In any of the above technical solutions, the plurality of side electrodes are symmetrically arranged with respect to the center line of the sample main body.

[0020] In any of the above technical solutions, the two sample main bodies are a first sample main body and a second sample main body. The two end electrodes of the first sample main body and the second sample main body are respectively connected in one-to-one correspondence through a first connection line and a second connection line. The first connection line and the second connection line are connected through a third connection line;

[0021] A first break point is provided between the node where the first sample main body is connected to the first connection line and the node where the first connection line is connected to the third connection line;

[0022] A second break point is provided between the node where the second sample main body is connected to the second connection line and the node where the second connection line is connected to the third connection line;

[0023] A third break point is provided on the third connection line.

[0024] In any of the above technical solutions, there are six side electrodes on any one of the sample main bodies,

[0025] The six side electrodes and the sample main body form a "rich" character structure.

[0026] In any of the above technical solutions, a metal coating is provided on the electrode, and the metal coating is in a multi-segment comb shape.

[0027] In any of the above technical solutions, the number of combs is 3.

[0028] In any of the above technical solutions, the substrate is a gallium arsenide substrate.

[0029] In any of the above technical solutions, connect the first break point, connect the second break point, connect any two pairs of the side electrodes on the same side of the first sample main body and the second sample main body, and the first sample main body and the first sample main body are connected in parallel.

[0030] In any of the above technical solutions, connect the third break point, connect any two side electrodes on different sides of the first sample main body and the second sample main body, and the first sample main body and the first sample main body are connected in series.

[0031] In any of the above technical solutions, the connection method of the first break point, the second break point or the third break point is welding.

[0032] In any of the above technical solutions, any two of the side electrodes are connected by a suspended jumper wire.

[0033] According to the concept of the present invention, by arranging two sample main bodies in parallel on a substrate, and arranging a plurality of side electrodes and two end electrodes on the sample main body, and using different wiring methods to connect the two sample main bodies in series or in parallel, the quantized Hall resistance sample can have multiple resistance values, so that one sample can have multiple resistance values, improving the functionality and compatibility of the quantized Hall resistance sample. At the same time, the two sample main bodies can be used separately, greatly improving the yield rate in the product production process and enhancing the stability and reliability of the product.

[0034] According to one aspect of the present invention, by setting the metal coating on the electrode into multiple comb-shaped segments, it is possible to avoid the problem that when the square coating is annealed (melted), individual metal points may penetrate into the semiconductor, and the surrounding metal surfaces may concentrate on the same point, effectively reducing the problem of electrode function deviation, making the overall metal coating more uniform, and also saving coating materials. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for use in the embodiments. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0036] Figure 1 Schematically showing the quantum Hall resistance effect and the quantum plateau schematic diagram;

[0037] Figure 2 Schematically showing the standard gallium arsenide-based sample and the working principle schematic diagram of the quantum Hall resistance;

[0038] Figure 3 Schematic diagram of the metal coating of the electrode of an efficient compatible quantum Hall resistance sample showing an embodiment of the present invention;

[0039] Figure 4 Schematic diagram of the structure of an efficient compatible quantum Hall resistance sample showing an embodiment of the present invention;

[0040] Figure 5 Schematic diagram of the parallel connection of the first sample main body and the second sample main body of an efficient compatible quantum Hall resistance sample showing an embodiment of the present invention;

[0041] Figure 6 Schematic diagram of the series connection of the first sample main body and the second sample main body of an efficient compatible quantum Hall resistance sample showing an embodiment of the present invention;

[0042] Figure 7 Schematic diagram of the relationship curve between the working magnetic field and the resistance value of an efficient compatible quantum Hall resistance sample showing an embodiment of the present invention.

[0043] Wherein, Figures 1 to 7 The corresponding relationship between the reference numerals in the drawings and the component names is as follows:

[0044] 10. Substrate; 21. First sample main body; 22. Second sample main body; 30. First connecting wire; A. First break point; 40. Second connecting wire; C. Second break point; 50. Third connecting wire; B. Third break point; 60. Electrode; 61. Side electrode; 62. End electrode; 63. Metal coating. Detailed implementation mode

[0045] The description of the embodiments of this specification should be combined with the corresponding drawings, and the drawings should be regarded as a part of the complete specification. In the drawings, the shape or thickness of the embodiments may be enlarged and simplified or marked conveniently. Furthermore, the parts of each structure in the drawings will be described separately. It should be noted that the elements not shown or not described in words in the drawings are in the forms known to those of ordinary skill in the art.

[0046] Any reference to directions and orientations in the description of the embodiments herein is for convenience of description only and should not be construed as any limitation to the protection scope of the present invention. The following description of the preferred embodiments involves combinations of features, which may exist independently or in combination. The present invention is not particularly limited to the preferred embodiments. The scope of the present invention is defined by the claims.

[0047] Such as Figures 3 to 7As shown, a highly efficient and compatible quantum Hall resistance sample includes a substrate 10 and also includes two sample main bodies, which are arranged in parallel on the substrate 10. Any one of the sample main bodies includes:

[0048] Multiple electrodes, which are divided into multiple side electrodes and two end electrodes. The multiple side electrodes are arranged on two sides of the sample main body, and the two end electrodes are respectively arranged at both ends of the sample main body.

[0049] In this embodiment, by arranging two sample main bodies in parallel on the substrate 10 and setting multiple side electrodes and two end electrodes on the sample main bodies, and using different wiring methods to connect the two sample main bodies in series or in parallel, the quantum Hall resistance sample can have multiple resistance values, enabling a single sample to have multiple resistance values, enhancing the functionality and compatibility of the quantum Hall resistance sample. At the same time, the two sample main bodies can be used independently, greatly improving the yield rate during the product production process and enhancing the stability and reliability of the product.

[0050] Among them, for a standard sample with 8 electrodes, at least 6 of them need to be technically qualified to be used. When the two sample main bodies can be used independently, assuming the yield rate of one of the sample main bodies is 50%, then the yield rate of the quantum Hall resistance sample composed of the two sample main bodies in parallel is 1 - 50%×50% = 75%. It can be clearly seen that the above structure can greatly improve the yield rate.

[0051] Furthermore, the quantum Hall resistance sample can use the two sample main bodies independently, and the quantum Hall resistance sample has one resistance value; when the two sample main bodies are connected in series, the quantum Hall resistance sample has another resistance value; when the two sample main bodies are connected in parallel, the quantum Hall resistance sample has yet another resistance value.

[0052] It can be understood that the shape of one sample main body is a rectangular strip, the end electrodes are arranged on the sides where the width of the rectangle is located, and the multiple side electrodes are arranged on the sides where the length of the rectangle is located, and the side electrodes on the same side are evenly spaced.

[0053] In an embodiment of the present invention, preferably, the multiple side electrodes are symmetrically arranged with respect to the center line of the sample main body.

[0054] In an embodiment of the present invention, preferably, the substrate 10 is a gallium arsenide substrate.

[0055] Such as Figure 4As shown, in an embodiment of the present invention, preferably, the two sample main trunks are the first sample main trunk 21 and the second sample main trunk 22. The two end electrodes of the first sample main trunk 21 and the second sample main trunk 22 are respectively connected in one-to-one correspondence through the first connecting wire 30 and the second connecting wire 40. The first connecting wire 30 and the second connecting wire 40 are connected through the third connecting wire 50;

[0056] A first break point A is provided between the node where the first sample main trunk 21 is connected to the first connecting wire 30 and the node where the first connecting wire 30 is connected to the third connecting wire 50;

[0057] A second break point C is provided between the node where the second sample main trunk 22 is connected to the second connecting wire 40 and the node where the second connecting wire 40 is connected to the third connecting wire 50;

[0058] A third break point B is provided on the third connecting wire 50.

[0059] In this embodiment, the sample main trunk includes the first sample main trunk 21 and the second sample main trunk 22. The two sample main trunks are connected by means of a metal connecting wire or a metal coating. The end electrodes on the same side of the first sample main trunk 21 and the second sample main trunk 22 are respectively connected in one-to-one correspondence through the first connecting wire 30 and the second connecting wire 40. The first connecting wire 30 and the second connecting wire 40 are connected through the third connecting wire 50, and break points are arranged at corresponding positions. The first sample main trunk 21 and the second sample main trunk 22 can be quickly connected in series and in parallel through the first break point A, the second break point C, and the third break point B.

[0060] The first break point A, the second break point C, or the third break point B can be connected by spot welding with ordinary soldering iron solder.

[0061] In an embodiment of the present invention, preferably, six side electrodes are provided on the side of any sample main trunk,

[0062] The six side electrodes and the sample main trunk form a "rich" character structure.

[0063] In this embodiment, generally, six side electrodes are provided on the sample main trunk, with three on each of the two sides and symmetrically arranged in pairs, forming a "rich" character structure, which is convenient for wiring.

[0064] As Figure 3 shown, in an embodiment of the present invention, preferably, a metal coating 63 is provided on the electrode, and the metal coating is in a multi-segment comb shape.

[0065] In this embodiment, by setting the metal coating on the electrode into a multi-segment comb-tooth shape, it is possible to avoid the problem that when individual metal points are annealed (melted) and penetrate into the semiconductor during square coating, the surrounding metal surfaces may concentrate on the same point, thereby effectively reducing the problem of electrode function deviation, further improving the stability and reliability of the quantized Hall resistance sample, making the metal coating more uniform as a whole, and saving coating materials.

[0066] Furthermore, the comb teeth of the multi-stage comb-tooth structure are independent of each other, so that the yield rate of the metal coating is greatly improved.

[0067] In one embodiment of the present invention, preferably, the number of comb teeth is 3.

[0068] In this embodiment, under the premise of limited sample size, three comb teeth are the optimal number.

[0069] When testing multiple samples of square metal-coated electrodes, multi-segment comb-tooth structures with 2 comb teeth, multi-segment comb-tooth structures with 3 comb teeth, and multi-segment comb-tooth structures with 4 comb teeth, when the number of comb teeth is 3, the yield rate is the highest, the electrode stability is the best, and the loss characterization data is closer to 0; while the loss characterization data of the samples of square metal-coated electrodes, multi-segment comb-tooth structures with 2 comb teeth, and multi-segment comb-tooth structures with 4 comb teeth fluctuate widely, and are unstable and have large losses.

[0070] In one embodiment of the present invention, preferably, the first breakpoint A is connected, the second breakpoint C is connected, and any two pairs of side electrodes on the same side of the first sample trunk 21 and the second sample trunk 22 are connected, and the first sample trunk 21 and the first sample trunk 21 are connected in parallel.

[0071] In this embodiment, the two ends of the first breakpoint A are connected, and the two ends of the second breakpoint C are connected, and the special alloy aluminum wires E, F, G, and H are used for ultrasonic spot welding. Figure 5 The electrodes are spot welded and connected. The circular black marked electrode points can be used as standard 8-electrode "丰" sample, which can achieve 1 / 2 times the resistance value.

[0072] In one embodiment of the present invention, preferably, the third breakpoint B is connected, and any two side electrodes on the opposite sides of the first sample trunk 21 and the second sample trunk 22 are connected, and the first sample trunk 21 and the first sample trunk 21 are connected in series.

[0073] In this embodiment, the two ends of the third breakpoint B are connected according to Figure 6 The X and Y jumper wires are connected using an ultrasonic spot welding lead machine. The circular electrode points can be used as standard 8-electrode "Feng" samples, which can achieve samples with twice the resistance value.

[0074] It should be particularly pointed out that when the first sample trunk 21 and the second sample trunk 22 are connected in series, the direction of the magnetic field needs to be set to pass through the paper from the bottom to the top.

[0075] In one embodiment of the present invention, preferably, the first breakpoint A, the second breakpoint C or the third breakpoint B are connected by welding.

[0076] In one embodiment of the present invention, preferably, any two side electrodes are connected via a suspended jumper wire and have no contact with the rest of the sample.

[0077] like Figure 7 As shown, under normal circumstances, the highest reference value of a single chip is 12906.40373, and the center of the working magnetic field in the figure is about 8.5T.

[0078] If connected in series, the high-efficiency compatible quantized Hall resistor sample can provide a new reference value of 25812.8746, that is, it expands the new reference value of 25812.8746 and achieves the purpose of improving compatibility.

[0079] Both the series value and the conventional value are quantum resistance values, which can provide a precise resistance ratio of 2:1.

[0080] If parallel connection is achieved, the high-efficiency compatible quantized Hall resistance sample can provide a new reference value of 6453.201865, which expands the new reference value of 6453.201865.

[0081] Both the series value and the parallel value are quantum resistance values, which can provide a precise resistance ratio of 4:1.

[0082] The high-efficiency compatible quantized Hall resistor sample of the present invention arranges two parallel sample trunks on a substrate, and arranges a plurality of side electrodes and two end electrodes on the sample trunks. The two sample trunks are connected in series or in parallel by using different wiring methods. This enables the quantized Hall resistor sample to have a variety of resistance values, so that one sample can have a variety of resistance values, thereby improving the functionality and compatibility of the quantized Hall resistor sample. At the same time, the two sample trunks can be used separately, which greatly improves the yield rate in the product production process and improves the product stability and reliability.

[0083] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. An efficient and compatible quantum Hall resistance sample, comprising a substrate (10), characterized in that, It also includes two sample trunks, which are arranged in parallel on the substrate (10), and any one of the sample trunks includes: A plurality of electrodes (60), wherein the electrodes (60) are divided into a plurality of side electrodes (61) and two end electrodes (62), wherein the plurality of side electrodes (61) are arranged on two sides of the sample trunk, and the two end electrodes (62) are respectively arranged at two ends of the sample trunk; The electrode (60) is provided with a metal coating (63), and the metal coating (63) is in a multi-segment comb-teeth shape; The number of comb teeth is 3; The substrate (10) is a gallium arsenide substrate; The two sample trunks are a first sample trunk (21) and a second sample trunk (22); the two end electrodes (62) of the first sample trunk (21) and the second sample trunk (22) are respectively connected in a one-to-one correspondence via a first connecting line (30) and a second connecting line (40); and the first connecting line (30) and the second connecting line (40) are connected via a third connecting line (50); A first breakpoint (A) is provided between a node where the first sample trunk (21) is connected to the first connecting line (30) and a node where the first connecting line (30) is connected to the third connecting line (50); A second breakpoint (C) is provided between a node where the second sample trunk (22) is connected to the second connecting line (40) and a node where the second connecting line (40) is connected to the third connecting line (50); The third connecting line (50) is provided with a third breakpoint (B); The first breakpoint (A), the second breakpoint (C), and the third breakpoint (B) can quickly realize the series connection and parallel connection of the first sample trunk (21) and the second sample trunk (22).

2. The highly compatible quantum Hall resistance sample according to claim 1, wherein The plurality of side electrodes (61) are symmetrically arranged about the center line of the sample trunk.

3. The highly compatible quantum Hall resistance sample according to claim 2, wherein The side electrodes (61) of any of the sample trunks are provided with six, The six side electrodes (61) and the sample trunk form a "丰"-shaped structure.

4. The highly compatible quantum Hall resistance sample according to claim 1, characterized in that, The first breakpoint (A) is connected, the second breakpoint (C) is connected, and any two pairs of the side electrodes (61) on the same side of the first sample trunk (21) and the second sample trunk (22) are connected, so that the first sample trunk (21) and the second sample trunk (22) are connected in parallel.

5. The highly compatible quantum Hall resistance sample according to claim 1, characterized in that The third breakpoint (B) is connected, and any two side electrodes (61) on opposite sides of the first sample trunk (21) and the second sample trunk (22) are connected, so that the first sample trunk (21) and the second sample trunk (22) are connected in series.

6. The highly compatible quantum Hall resistance sample according to claim 4 or 5, characterized in that, The first breakpoint (A), the second breakpoint (C) or the third breakpoint (B) is connected by welding.

7. The highly compatible quantum Hall resistance sample according to claim 4 or 5, characterized in that, Any two of the side electrodes (61) are connected via a suspended jumper wire.

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