Joining device, joining system and joining method

Abstract

An engagement device (41, 41A, 41B) based on the present disclosure is used for engaging between substrates, and has a first holding portion (110), a second holding portion (120), a moving portion (130), a housing (100), an interferometer (160, 170), a first gas supply portion (140, 140B), and a second gas supply portion (180, 180A). The first holding portion (110) is used for adsorptively holding a first substrate (W1) from above. The second holding portion (120) is used for adsorptively holding a second substrate (W2) from below. The moving portion (130) is used for moving one of the first holding portion (110) and the second holding portion (120) relative to the other in a horizontal direction. The housing (100) houses the first holding portion (110), the second holding portion (120), and the moving portion (130). The interferometer (160, 170) is disposed inside the housing (100), and measures a horizontal distance to the one of the holding portions or an object moving together with the one of the holding portions by irradiating light to the one of the holding portions or the object. The first gas supply portion (140, 140B) is used for supplying a first gas that has been cleaned to the inside of the housing (100). The second gas supply portion (180, 180A) is used for supplying a second gas to a space between the one of the holding portions or the object irradiated with the light and the interferometer (160, 170).

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a bonding apparatus, a bonding system, and a bonding method. BACKGROUND

[0002] In the past, in response to a demand for high integration of semiconductor devices, a three-dimensional integration technique of layering semiconductor devices three-dimensionally has been proposed. As a system using this three-dimensional integration technique, for example, a bonding technique of bonding substrates such as semiconductor wafers has been known.

[0003] PRIOR ART DOCUMENTS

[0004] PATENT DOCUMENTS

[0005] Patent Document 1: International Publication No. 2018 / 088094 SUMMARY

[0006] PROBLEMS TO BE SOLVED BY THE INVENTION

[0007] The present disclosure provides a technique capable of improving bonding accuracy between substrates in a bonding technique of bonding between substrates.

[0008] SOLUTION TO PROBLEM

[0009] A bonding apparatus according to one embodiment of the present disclosure is used for bonding between substrates, and includes a first holding portion, a second holding portion, a moving portion, a housing, an interferometer, a first gas supply portion, and a second gas supply portion. The first holding portion is configured to adsorb and hold a first substrate from above. The second holding portion is configured to adsorb and hold a second substrate from below. The moving portion is configured to move one of the first holding portion and the second holding portion relative to the other in a horizontal direction. The housing houses the first holding portion, the second holding portion, and the moving portion. The interferometer is disposed inside the housing and configured to measure a horizontal distance to the one of the holding portions or an object moving together with the one of the holding portions by irradiating light to the one of the holding portions or the object. The first gas supply portion is configured to supply a first gas that has been cleaned to an inside of the housing. The second gas supply portion is configured to supply a second gas to a space between the one of the holding portions or the object irradiated with the light and the interferometer.

[0010] EFFECT OF THE INVENTION

[0011] According to the present disclosure, in a bonding technique of bonding between substrates, it is possible to improve bonding accuracy between substrates. BRIEF DESCRIPTION OF DRAWINGS

[0012] Figure 1 is a schematic view showing a configuration of a bonding system according to an embodiment.

[0013] Figure 2 is a schematic view showing a state before the first substrate and the second substrate are joined according to the embodiment.

[0014] Figure 3 is a plan view of a joining apparatus according to the embodiment.

[0015] Figure 4 is a side view of a joining apparatus according to the embodiment.

[0016] Figure 5 is a side view of a first holding portion and a second holding portion according to the embodiment.

[0017] Figure 6 is a perspective view of a second gas supply portion according to the embodiment.

[0018] Figure 7 is a side sectional view of the second gas supply portion according to the embodiment.

[0019] Figure 8 is a flowchart showing a process performed by a joining system according to the embodiment.

[0020] Figure 9 is a perspective view of a second gas supply portion according to a modification.

[0021] Figure 10 is a side sectional view of the second gas supply portion according to the modification.

[0022] Figure 11 is a side view of a joining apparatus according to the modification. DETAILED DESCRIPTION

[0023] Hereinafter, a mode for implementing a joining apparatus, a joining system, and a joining method according to the present disclosure (hereinafter, referred to as "embodiment") will be described in detail with reference to the drawings. Note that the present disclosure is not limited by the embodiment. In addition, each embodiment can be appropriately combined without causing contradiction in the processing content. In addition, in each of the embodiments below, the same reference signs are attached to the same parts, and repeated description is omitted.

[0024] In addition, in the embodiment shown below, expressions such as "fixed", "orthogonal", "perpendicular", or "parallel" are sometimes used, but these expressions do not need to be strictly "fixed", "orthogonal", "perpendicular", or "parallel". That is, each of the above expressions allows, for example, a deviation in manufacturing accuracy, setting accuracy, or the like.

[0025] Additionally, in the accompanying figures, an orthogonal coordinate system is sometimes shown, defining the X-axis, Y-axis, and Z-axis as mutually orthogonal, with the vertically upward direction set as the positive Z-axis, to facilitate understanding of the explanation. Furthermore, the direction of rotation about the vertical axis is sometimes referred to as the θ direction.

[0026] In recent years, the integration of semiconductor devices has continued to advance. When arranging multiple highly integrated semiconductor devices in a horizontal plane and connecting them through wiring to produce products, there are concerns about the increased wiring length, which may lead to increased wiring resistance and wiring delay.

[0027] Therefore, a three-dimensional integration technique that uses three-dimensionally stacked semiconductor devices is proposed. In this three-dimensional integration technique, for example, the bonding system described in Patent Document 1 is used to bond two semiconductor wafers (hereinafter referred to as "substrates").

[0028] In the above-described bonding apparatus, with one substrate (hereinafter referred to as "first substrate") held by a first holding portion and another substrate (hereinafter referred to as "second substrate") held by a second holding portion disposed below the first holding portion, the first substrate and the second substrate are bonded together. Furthermore, before bonding the substrates in this manner, the second holding portion is moved horizontally to adjust the horizontal position between the first substrate and the second substrate, and further moved vertically to adjust the vertical position between the first substrate and the second substrate.

[0029] In the joining device described in Patent Document 1 above, when the second holding part is moved in the horizontal direction, a laser interferometer is used to measure the distance in the horizontal direction of the moving part, and the moving part is controlled based on the measurement result, thereby adjusting the horizontal position of the second holding part.

[0030] In techniques that bond substrates together, there is a requirement to improve the bonding accuracy between the substrates. For example, bonding accuracy can be improved by minimizing the horizontal positional offset between the first and second substrates.

[0031] <Structure of the Joining System>

[0032] First, refer to Figure 1 and Figure 2 The structure of the joining system involved in the implementation method will be described. Figure 1 This is a schematic diagram illustrating the structure of the joining system according to the embodiment. Additionally, Figure 2 This is a schematic diagram showing the state of the first substrate and the second substrate before they are joined together according to the embodiment.

[0033] Figure 1 The bonding system 1 shown forms an overlapping substrate T by bonding a first substrate W1 to a second substrate W2 (see reference). Figure 2 ).

[0034] The first substrate W1 and the second substrate W2 are single-crystal silicon wafers, on which multiple electronic circuits are formed. The diameters of the first substrate W1 and the second substrate W2 are approximately the same. Alternatively, one of the first substrate W1 and the second substrate W2 may be, for example, a substrate without electronic circuits formed.

[0035] Below, as Figure 2 As shown, the side of the first substrate W1 that is bonded to the second substrate W2 is designated as "bonding surface W1j", and the side opposite to the bonding surface W1j is designated as "non-bonding surface W1n". Similarly, the side of the second substrate W2 that is bonded to the first substrate W1 is designated as "bonding surface W2j", and the side opposite to the bonding surface W2j is designated as "non-bonding surface W2n".

[0036] like Figure 1 As shown, the joining system 1 includes an inlet / outlet station 2 and a processing station 3. The inlet / outlet station 2 is located on the positive Y-axis side of the processing station 3 and is integrally connected to the processing station 3.

[0037] The loading / unloading station 2 includes a loading platform 10 and a transport area 20. The loading platform 10 has multiple loading plates 11. Each loading plate 11 holds boxes C1 to C4, which hold multiple (e.g., 25) substrates in a horizontal position. Box C1 can hold multiple first substrates W1, box C2 can hold multiple second substrates W2, and box C3 can hold multiple overlapping substrates T. Box C4 is, for example, a box for recycling defective substrates. Furthermore, the number of boxes C1 to C4 placed on the loading plate 11 is not limited to the number shown in the figure.

[0038] The transport area 20 is arranged adjacent to the negative Y-axis side of the mounting stage 10. A transport path 21 extending along the X-axis and a transport device 22 capable of moving along the transport path 21 are provided in the transport area 20. The transport device 22 can move not only along the Y-axis but also along the X-axis and can rotate about the Z-axis. The transport device 22 transports the first substrate W1, the second substrate W2, and the overlapping substrate T between the boxes C1 to C4 placed on the mounting plate 11 and the third processing block G3 of the processing station 3 (described later).

[0039] Processing station 3, for example, has three processing blocks G1, G2, and G3. The first processing block G1 is located on the back side of processing station 3. Figure 1 (On the positive X-axis side). Additionally, the second processing block G2 is positioned on the front side of processing station 3 (on the positive X-axis side). Figure 1The third processing block G3 is located on the side of the transfer in / out station 2 of the processing station 3 (on the negative X-axis side). Figure 1 (positive Y-axis direction side).

[0040] A surface modification device 30 is provided in the first processing block G1 for modifying the bonding surfaces W1j and W2j of the first substrate W1 and the second substrate W2. The surface modification device 30 cuts the SiO2 bonds in the bonding surfaces W1j and W2j of the first substrate W1 and the second substrate W2 to form single-bonded SiO, thereby modifying the bonding surfaces W1j and W2j to make them easier to hydrophilize later.

[0041] Specifically, in the surface modification apparatus 30, oxygen or nitrogen, which is used as a processing gas, is stimulated under a reduced pressure atmosphere to plasma-ionize it. Furthermore, the oxygen or nitrogen ions are irradiated onto the bonding surfaces W1j and W2j of the first substrate W1 and the second substrate W2, thereby modifying the bonding surfaces W1j and W2j through plasma treatment.

[0042] Furthermore, a surface hydrophilization device 40 is provided in the first processing block G1. The surface hydrophilization device 40 uses, for example, pure water to hydrophilize the bonding surfaces W1j and W2j of the first substrate W1 and the second substrate W2, and also cleans the bonding surfaces W1j and W2j. Specifically, the surface hydrophilization device 40 supplies pure water to the first substrate W1 or the second substrate W2 while rotating the first substrate W1 or the second substrate W2 held in a rotating holding disk. As a result, the pure water supplied to the first substrate W1 or the second substrate W2 diffuses on the bonding surfaces W1j and W2j of the first substrate W1 or the second substrate W2, hydrophilizing the bonding surfaces W1j and W2j.

[0043] Here, an example is shown in which the surface modification device 30 and the surface hydrophilization device 40 are arranged in a horizontal manner, but the surface hydrophilization device 40 may also be stacked on top of or below the surface modification device 30.

[0044] A bonding device 41 is provided in the second processing block G2. The bonding device 41 bonds the hydrophilized first substrate W1 to the second substrate W2 by intermolecular forces. The specific structure of the bonding device 41 will be described later.

[0045] A transport region 60 is formed in the area surrounded by the first processing block G1, the second processing block G2, and the third processing block G3. A transport device 61 is disposed in the transport region 60. The transport device 61 has a transport arm that is movable, for example, in the vertical direction, in the horizontal direction, and about the vertical axis. The transport device 61 moves within the transport region 60 to transport the first substrate W1, the second substrate W2, and the overlapping substrate T to predetermined devices in the first processing block G1, the second processing block G2, and the third processing block G3 adjacent to the transport region 60.

[0046] Additionally, the bonding system 1 includes a control device 70. The control device 70 controls the operation of the bonding system 1. This control device 70 is, for example, a computer, and includes a control unit and a storage unit (not shown). The control unit includes a microcomputer with a CPU (Central Processing Unit), ROM (Read Only Memory), RAM (Random Access Memory), input / output ports, and various circuits. The CPU of this microcomputer achieves the control described later by reading and executing a program stored in the ROM. Furthermore, the storage unit is implemented, for example, using semiconductor storage elements such as RAM and flash memory, or storage devices such as hard disks and optical disks.

[0047] Furthermore, the program can be recorded on a computer-readable recording medium and installed from that medium into the storage unit of the control device 70. Examples of computer-readable recording media include hard disks (HD), floppy disks (FD), optical disks (CD), magneto-optical disks (MO), and memory cards.

[0048] <Structure of the Joining Device>

[0049] Here, refer to Figure 3 and Figure 4 The structure of the coupling device 41 will be described below. Figure 3 This is a top view of the coupling device 41 according to the embodiment. Additionally, Figure 4 This is a side view of the coupling device 41 according to the embodiment.

[0050] like Figure 3 and Figure 4 As shown, the coupling device 41 according to the embodiment includes a housing 100, a first holding part 110, a second holding part 120, a moving part 130, a first gas supply part 140, an exhaust part 150, a first interferometer 160, a second interferometer 170, and a second gas supply part 180.

[0051] The housing 100 is, for example, a box that is rectangular in shape when viewed from above, housing a first holding part 110, a second holding part 120, a moving part 130, a first gas supply part 140, an exhaust part 150, a first interferometer 160, a second interferometer 170, and a second gas supply part 180.

[0052] In addition, a mounting platform 101, a plurality of support columns 102 erected on the upper surface of the mounting platform 101, and a top 103 supported on the plurality of support columns 102 are disposed inside the housing 100.

[0053] The first holding portion 110 is used to hold the upper surface (non-bonding surface W1n) of the first substrate W1 from above by adsorption. The first holding portion 110 is supported on the top 103 (see reference). Figure 4 The second holding part 120 is located below the first holding part 110 and is used to hold the lower surface (non-bonding surface W2n) of the second substrate W2 from below.

[0054] Here, refer to Figure 5 The structure of the first retaining part 110 and the second retaining part 120 will be described. Figure 5 This is a side view of the first holding part 110 and the second holding part 120 according to the embodiment.

[0055] like Figure 5 As shown, the first holding portion 110 has a main body portion 111. The main body portion 111 is supported by a support member 112. A through hole 113 is formed in the support member 112 and the main body portion 111, penetrating through the support member 112 and the main body portion 111 in the vertical direction. The position of the through hole 113 corresponds to the center of the first substrate W1 that is adsorbed and held in the first holding portion 110. A pressing pin 191 of the striker 190 (described later) is inserted into the through hole 113.

[0056] The firing pin 190 is disposed on the upper surface of the support member 112 and includes a pressing pin 191, an actuator part 192, and a direct-acting mechanism 193. The pressing pin 191 is a cylindrical member extending in the vertical direction and is supported by the actuator part 192.

[0057] The actuator section 192 generates a fixed pressure in a fixed direction (here, vertically downward) by air supplied from an electro-pneumatic regulator (not shown). The actuator section 192 can be controlled by the air supplied from the electro-pneumatic regulator to apply a pressing load to the center of the first substrate W1 in such a way that it abuts against the center of the first substrate W1. In addition, the front end of the pressing pin 191 can move freely up and down in the vertical direction by air from the electro-pneumatic regulator through the through hole 113.

[0058] The actuator section 192 is supported on the direct drive mechanism 193. The direct drive mechanism 193 moves the actuator section 192 in the vertical direction by, for example, a drive section with a built-in electric motor.

[0059] The striker 190 controls the movement of the actuator section 192 via the direct motion mechanism 193, and controls the pressing load of the pressing pin 191 on the first substrate W1 via the actuator section 192. As a result, the striker 190 presses and adheres to the center of the first substrate W1 held in the first holding section 110, so that the first substrate W1 comes into contact with the second substrate W2.

[0060] A plurality of pins 114 are provided on the lower surface of the main body 111 for contacting the upper surface (non-joining surface) of the first substrate W1. The plurality of pins 114 have, for example, a diameter of 0.1 mm to 1 mm and a height of tens to hundreds of μm. The plurality of pins 114 are arranged evenly at intervals of, for example, 2 mm.

[0061] The first holding portion 110 has a plurality of adsorption portions for adsorbing the first substrate W1 in a portion of the area where the plurality of pins 114 are provided. Specifically, a plurality of outer adsorption portions 115 and a plurality of inner adsorption portions 116 are provided on the lower surface of the main body portion 111 of the first holding portion 110 for adsorbing the first substrate W1 by means of vacuum. The plurality of outer adsorption portions 115 and the plurality of inner adsorption portions 116 have adsorption areas that are arc-shaped when viewed from above. The plurality of outer adsorption portions 115 and the plurality of inner adsorption portions 116 have the same height as the pins 114.

[0062] Multiple outer adsorption portions 115 are disposed on the outer periphery of the main body portion 111. The multiple outer adsorption portions 115 are connected to a suction device (not shown) such as a vacuum pump to adsorb the outer periphery of the first substrate W1 by evacuation.

[0063] Multiple inner adsorption portions 116 are arranged circumferentially at a position radially inward of the main body portion 111 compared to the multiple outer adsorption portions 115. The multiple inner adsorption portions 116 are connected to a suction device (not shown) such as a vacuum pump to adsorb the region between the outer periphery and the center of the first substrate W1 by evacuation.

[0064] The second holding portion 120 will be described. The second holding portion 120 has a main body portion 121, which has a diameter that is the same as or larger than the diameter of the second substrate W2. Here, the second holding portion 120 with a diameter larger than the diameter of the second substrate W2 is shown. The upper surface of the main body portion 121 is an opposing surface that faces the lower surface (non-jointing surface W2n) of the second substrate W2.

[0065] A plurality of pins 122 are provided on the upper surface of the main body 121 for contacting the lower surface (non-joining surface W2n) of the second substrate W2. The plurality of pins 122 have, for example, a diameter of 0.1 mm to 1 mm and a height of tens to hundreds of μm. The plurality of pins 122 are arranged evenly at intervals of 2 mm, for example.

[0066] Furthermore, on the upper surface of the main body 121, a lower side rib 123 is provided in a ring shape on the outer side of a plurality of pins 122. The lower side rib 123 is formed in a ring shape and supports the outer periphery of the second substrate W2 throughout the entire circumference.

[0067] In addition, the main body 121 has a plurality of lower suction ports 124. The plurality of lower suction ports 124 are provided in the adsorption area surrounded by the lower ribs 123. The plurality of lower suction ports 124 are connected to a suction device (not shown) such as a vacuum pump via a suction tube (not shown).

[0068] The second holding portion 120 depressurizes the adsorption region by evacuating the adsorption region surrounded by the lower ribs 123 through multiple lower suction ports 124. As a result, the second substrate W2 placed in the adsorption region is adsorbed and held in the second holding portion 120.

[0069] The lower rib 123 supports the outer periphery of the lower surface of the second substrate W2 throughout its entire circumference, thus ensuring that even the outer periphery of the second substrate W2 is properly evacuated. This allows the entire surface of the second substrate W2 to be held in place. Furthermore, the lower surface of the second substrate W2 is supported by multiple pins 122, making it easy to peel the second substrate W2 from the second holding portion 120 when the evacuation of the second substrate W2 is released.

[0070] The bonding device 41 holds the first substrate W1 in the first holding portion 110 and the second substrate W2 in the second holding portion 120. Then, the bonding device 41 releases the holding of the first substrate W1 by the plurality of inner holding portions 116, and then lowers the pressing pin 191 of the impact pin 190, thereby pressing down the center portion of the first substrate W1. Thus, an overlapping substrate T formed by bonding the first substrate W1 and the second substrate W2 is obtained. The overlapping substrate T is then removed from the bonding device 41 by the conveying device 61.

[0071] return Figure 3 and Figure 4 The structure of the moving part 130 will be described below. The moving part 130 is used to move the second holding part 120 in the horizontal direction. Specifically, the moving part 130 includes a first moving part 131 for moving the second holding part 120 in the Y-axis direction and a second moving part 132 for moving the second holding part 120 in the X-axis direction.

[0072] The first movable part 131 is mounted on a pair of first guide rails 131a extending along the Y-axis direction, and is configured to be movable along the pair of first guide rails 131a. The pair of first guide rails 131a are provided on the upper surface of the mounting stage 101.

[0073] The second moving part 132 is mounted on a pair of second guide rails 132a extending along the X-axis direction, and is configured to be able to move along the pair of second guide rails 132a. The pair of second guide rails 132a are provided on the upper surface of the first moving part 131.

[0074] The second holding part 120 is mounted on the second moving part 132 and moves integrally with the second moving part 132. Furthermore, as described above, the second moving part 132 is mounted on the first moving part 131 via a pair of second guide rails 132a. Therefore, the moving part 130 can move the second holding part 120 along the Y-axis direction by moving the first moving part 131, and can move the second holding part 120 along the X-axis direction by moving the second moving part 132.

[0075] Furthermore, the second moving part 132 is configured to allow the second holding part 120 to move freely in the vertical direction and to rotate about the vertical axis.

[0076] In this way, the moving part 130 moves the second holding part 120 along the X-axis, Y-axis, and θ-axis directions to achieve horizontal alignment between the first substrate W1 held in the first holding part 110 and the second substrate W2 held in the second holding part 120. Furthermore, the moving part 130 moves the second holding part 120 along the Z-axis direction to achieve vertical alignment between the first substrate W1 held in the first holding part 110 and the second substrate W2 held in the second holding part 120.

[0077] Furthermore, the moving part 130 can move the first holding part 110 and the second holding part 120 relative to each other along the X-axis, Y-axis, and θ-axis directions. For example, the moving part 130 may move the first holding part 110 along the X-axis, Y-axis, and θ-axis directions. Alternatively, the moving part 130 may move the second holding part 120 along the X-axis and Y-axis directions, and move the first holding part 110 along the θ-axis direction.

[0078] The first gas supply unit 140 is an FFU (Fan Filter Unit) used to supply the interior of the housing 100 with a purified first gas. The first gas is, for example, dry air, or inert gases such as nitrogen or argon.

[0079] The first gas supply unit 140 is connected to the first gas supply source 143 via the first temperature measuring unit 149, the first temperature adjusting unit 141, and the valve 142, and is used to spray a first gas, which has been adjusted to a preset temperature by the first temperature adjusting unit 141 (in this embodiment, room temperature, for example, 23°C), into the interior of the housing 100. The first temperature measuring unit 149 measures the temperature of the first gas after temperature adjustment by the first temperature adjusting unit 141 and outputs the measurement result to the control unit of the control device 70.

[0080] In one embodiment, a first gas supply unit 140 is provided on a side 100a orthogonal to the Y-axis direction among the plurality of sides of the housing 100. Furthermore, the first gas supply unit 140 ejects a first gas along the Y-axis direction (specifically, the positive Y-axis direction).

[0081] An exhaust section 150 is provided on one of the multiple sides of the housing 100, on a side 100b facing the side 100a where the first gas supply section 140 is installed. The exhaust section 150 is connected to a suction device (not shown) such as a vacuum pump, and uses the suction force of the suction device to exhaust air from the interior of the housing 100.

[0082] In this way, in the coupling device 41 according to the embodiment, a side flow is formed inside the housing 100 by a first gas supply section 140 provided on one side 100a of the housing 100 and an exhaust section 150 provided on the other side 100b opposite to the side 100a.

[0083] The first interferometer 160 and the second interferometer 170 are, for example, laser interferometers, which measure the horizontal distance to the second moving part 132 by irradiating the side of the second moving part 132 with a laser.

[0084] The first interferometer 160 is disposed between the second moving part 132 and the first gas supply part 140, and irradiates the laser along the ejection direction of the first gas ejected from the first gas supply part 140, in other words, along the Y-axis direction which is the flow direction of the side flow. As a result, the first interferometer 160 measures the horizontal distance along the Y-axis from the reference point inside the first interferometer 160 to the second moving part 132.

[0085] The second interferometer 170 is disposed between the side 100c orthogonal to the X-axis direction of one of the plurality of sides of the housing 100 and the second moving part 132. The second interferometer 170 irradiates a laser along the X-axis direction orthogonal to the flow direction of the side flow. As a result, the second interferometer 170 measures the horizontal distance along the X-axis from a reference point inside the second interferometer 170 to the second moving part 132.

[0086] In addition, the first interferometer 160 and the second interferometer 170 do not necessarily need to irradiate the second moving part 132 with laser light. It is sufficient to irradiate the second moving part 132 or an object that moves together with the second moving part 132 with laser light. For example, it may also be that the first interferometer 160 and the second interferometer 170 measure the horizontal distance to the second holding part 120 by irradiating the second holding part 120 with laser light. Additionally, it may also be that the first interferometer 160 and the second interferometer 170 measure the horizontal distance to the other component by irradiating the second moving part 132 or another component provided on the second moving part 132 with laser light.

[0087] Furthermore, the light irradiated from the first interferometer 160 and the second interferometer 170 does not necessarily need to be laser light, as long as it is directional light with a fixed period.

[0088] In addition, in length measurement using an interferometer, errors may occur due to changes in the temperature, air pressure, etc. of the measurement environment. That is, when the temperature and air pressure of the measurement environment change, the refractive index of air changes, causing the wavelength of the reference light to change, and thus accurate measurement may not be possible.

[0089] The inventors of the present application measured the error in length measurement in the bonding device 41. As a result, the error in length measurement in the direction parallel to the flow of the side flow is small, whereas the error in length measurement in the direction orthogonal to the flow of the side flow is large.

[0090] In the side flow, due to heat generation from the electrical equipment system and heat transfer from the external partition board, there are locally relatively warm airflows or relatively cold airflows. In addition, the flow of the side flow itself also always fluctuates. Such a side flow with temperature differences and fluctuations causes the refractive index of air to always change. Therefore, the measurement results in the case of measuring the length across the side flow will have errors that always change.

[0091] Therefore, in the bonding device 41 according to the embodiment, it is configured to use a temperature-stable spot airflow to protect the light of the second interferometer 170 irradiated across the side flow, thereby reducing the measurement error caused by the side flow.

[0092] The second gas supply unit 180 supplies a second gas to the space between the second moving part 132 irradiated with the laser light from the second interferometer 170 and the second interferometer 170. Specifically, the second gas supply unit 180 ejects the second gas parallel to the optical path LP in a manner that covers the optical path LP of the light irradiated from the second interferometer 170. The second gas is, for example, dry air, or an inert gas such as nitrogen or argon.

[0093] The second gas supply unit 180 is connected to the second gas supply source 183 via the second temperature measuring unit 189, the second temperature adjusting unit 181, and the valve 182, and is used to spray a second gas, which has been adjusted to a preset temperature by the second temperature adjusting unit 181 (in this embodiment, room temperature, for example, 23°C), into the interior of the housing 100. The second temperature measuring unit 189 measures the temperature of the second gas after temperature adjustment by the second temperature adjusting unit 181 and outputs the measurement result to the control unit of the control device 70.

[0094] The first gas and the second gas are adjusted to the same temperature by the first temperature adjustment unit 141 and the second temperature adjustment unit 181. Specifically, the control unit of the control device 70 controls the second temperature adjustment unit 181 based on the measurement result of the first temperature measuring unit 149 to adjust the temperature of the second gas to the same temperature as the first gas. Alternatively, the control unit of the control device 70 may control the first temperature adjustment unit 141 based on the measurement result of the second temperature measuring unit 189 to adjust the temperature of the first gas to the same temperature as the second gas.

[0095] Furthermore, an example has been described here where the coupling device 41 includes a first temperature measuring unit 149 and a second temperature measuring unit 189, but the coupling device 41 only needs to include at least one of the first temperature measuring unit 149 and the second temperature measuring unit 189. Additionally, an example has been described here where the coupling device 41 includes a first temperature adjusting unit 141 and a second temperature adjusting unit 181, but the coupling device 41 only needs to include at least one of the first temperature adjusting unit 141 and the second temperature adjusting unit 181. For example, when the first temperature measuring unit 149 is provided to the first gas supply unit 140, the coupling device 41 only needs to include the second temperature adjusting unit 181 to the second gas supply unit 180. Conversely, when the second temperature measuring unit 189 is provided to the second gas supply unit 180, the coupling device 41 only needs to include the first temperature adjusting unit 141 to the first gas supply unit 140.

[0096] Here, refer to Figure 6 and Figure 7 The structure of the second gas supply unit 180 will be explained. Figure 6 This is a perspective view of the second gas supply unit 180 according to the embodiment. Additionally, Figure 7 This is a side cross-sectional view of the second gas supply unit 180 according to the embodiment.

[0097] like Figure 6 and Figure 7 As shown, the second gas supply unit 180 includes a receiving unit 184, an inlet unit 185, and a nozzle 186.

[0098] The housing 184 houses the second interferometer 170. The inlet 185 is a cylindrical portion that connects the interior of the housing 184 to the outside, and is provided, for example, on the upper surface of the housing 184. The inlet 185 is connected to the second gas supply source 183 via the second temperature adjustment unit 181 and the valve 182, for introducing the second gas into the interior of the housing 184. A nozzle 186 is provided at the junction of the housing 184 and the second moving part 132 (see reference). Figure 3 The opposite sides are used to eject the second gas introduced from the inlet 185 into the containment 184.

[0099] The nozzle 186 according to the embodiment has a first opening 186a1 and a second opening 186b1. Specifically, the nozzle 186 has a cylindrical first member 186a and a second member 186b that open along the X-axis direction, with the first member 186a configured to be contained within the second member 186b. The first opening 186a1 corresponds to the opening of the first member 186a. Furthermore, the second opening 186b1 corresponds to the gap formed between the first member 186a and the second member 186b.

[0100] The base end of the first component 186a is connected to the second interferometer 170 in such a way that it surrounds the light irradiation portion of the second interferometer 170. Therefore, light emitted from the second interferometer 170 irradiates the second moving portion 132 through the first opening 186a1.

[0101] On the other hand, the second gas supply section 180 ejects a second gas from the second opening 186b1. The second gas ejected from the second opening 186b1 flows parallel to the light irradiated from the second interferometer 170 in a manner that covers the light irradiated from the second interferometer 170.

[0102] The second gas is conditioned by the second temperature adjustment unit 181, thereby stabilizing the temperature. By using this second gas to cover the light irradiated from the second interferometer 170, the light can be protected from the influence of the surrounding thermal environment.

[0103] In this embodiment, the bonding device 41 is configured to house a second interferometer 170 that irradiates light in a direction orthogonal to the side flow within a second gas supply unit 180. Furthermore, in the bonding device 41 of this embodiment, the light irradiated from the second interferometer 170 is protected by the airflow of the second gas ejected from the second gas supply unit 180.

[0104] Therefore, the light irradiated from the second interferometer 170 can be protected from the influence of fluctuating side currents with thermal differences. Furthermore, it can also protect against thermal effects other than those from the side currents. Thus, errors in the measurement results of the second interferometer 170 due to these thermal effects can be suppressed.

[0105] Because the error in the measurement results of the second interferometer 170 is reduced, the positioning accuracy of the second substrate W2 is improved. Therefore, according to the bonding device 41 of the embodiment, the bonding accuracy between the first substrate W1 and the second substrate W2 can be improved.

[0106] Alternatively, for example, a method is considered that uses a cylindrical cover to physically cover the optical path of light irradiated from the second interferometer 170. However, in this method, the cover needs to move in conjunction with the movement of the second holding part 120, which may complicate the construction. In addition, the movable range of the second holding part 120 is also likely to be limited.

[0107] In contrast, in the coupling device 41 described in this embodiment, airflow is used to protect the light irradiated from the second interferometer 170. Therefore, compared to the case where protection is provided by a physical cover, the range of motion of the second holding part 120 is less restricted, and the structure is simpler. In addition, by using airflow that has been temperature-adjusted, the temperature stability is superior compared to protection provided by a cover.

[0108] Furthermore, the second gas supply unit 180 ejects the second gas at a wind speed that is faster than the wind speed of the first gas ejected from the first gas supply unit 140. As a result, the light irradiated from the second interferometer 170 can be protected more reliably.

[0109] Furthermore, the bonding device 41 includes a conveyor, a position adjustment mechanism, and a flipping mechanism, but these are not shown in the figures here. The conveyor temporarily holds the first substrate W1, the second substrate W2, and the overlapping substrate T. The position adjustment mechanism adjusts the horizontal orientation of the first substrate W1 and the second substrate W2. The flipping mechanism flips the front and back of the first substrate W1.

[0110] <Specific Operations of the Joining System>

[0111] Next, refer to Figure 8 The specific operation of the coupling system 1 involved in the implementation method will be explained. Figure 8 This is a flowchart illustrating the processing procedure performed by the coupling system 1 according to the embodiment. Figure 8 The various processes shown are executed based on the control of the control device 70.

[0112] First, a box C1 containing multiple first substrates W1, a box C2 containing multiple second substrates W2, and an empty box C3 are placed on a designated mounting plate 11 in the loading / unloading station 2. Then, the first substrates W1 in the box C1 are removed by the conveying device 22 and transported to the conveying device configured in the third processing block G3.

[0113] Next, the first substrate W1 is transported by the conveying device 61 to the surface modification apparatus 30 of the first processing block G1. In the surface modification apparatus 30, oxygen, which is used as a processing gas, is excited under a specified reduced pressure atmosphere to plasma-ionize it. The oxygen ions are then irradiated onto the bonding surface of the first substrate W1 to perform plasma treatment on the bonding surface. As a result, the bonding surface of the first substrate W1 is modified (step S101).

[0114] Next, the first substrate W1 is transported by the conveying device 61 to the surface hydrophilization device 40 of the first processing block G1. In the surface hydrophilization device 40, the first substrate W1, which is held in a rotating holding disk, is rotated while pure water is supplied to the first substrate W1. As a result, the bonding surface of the first substrate W1 is hydrophilized. In addition, the bonding surface of the first substrate W1 is cleaned with the pure water (step S102).

[0115] Next, the first substrate W1 is transported by the conveying device 61 to the bonding device 41 of the second processing block G2. The first substrate W1, which is transported into the bonding device 41, is transported to the position adjustment mechanism via a conveyor, and the orientation in the horizontal direction is adjusted by the position adjustment mechanism (step S103).

[0116] Next, the first substrate W1 is transferred from the position adjustment mechanism to the flipping mechanism, and the flipping mechanism flips the front and back of the first substrate W1 (step S104). Specifically, the bonding surface W1j of the first substrate W1 is turned downward. Then, the first substrate W1 is transferred from the flipping mechanism to the first holding part 110, and the first holding part 110 holds the first substrate W1 by adsorption (step S105).

[0117] The processing of the second substrate W2 is repeated in the same way as the processing of the first substrate W1 in steps S101 to S105. First, the second substrate W2 is taken out of the box C2 by the transfer device 22 and transferred to the transfer device arranged in the third processing block G3.

[0118] Next, the second substrate W2 is transported to the surface modification device 30 by the conveying device 61, and the bonding surface W2j of the second substrate W2 is modified (step S106). After that, the second substrate W2 is transported to the surface hydrophilization device 40 by the conveying device 61, and the bonding surface W2j of the second substrate W2 is hydrophilized and cleaned (step S107).

[0119] Next, the second substrate W2 is transported to the bonding device 41 by the conveying device 61. The second substrate W2, which has been transported into the bonding device 41, is then transported to the position adjustment mechanism via a conveyor. Then, the orientation of the second substrate W2 in the horizontal direction is adjusted by the position adjustment mechanism (step S108).

[0120] Next, the second substrate W2 is transferred to the second holding part 120, and the second substrate W2 is held in the second holding part 120 with the cut portion facing a predetermined direction (step S109).

[0121] Next, the position of the first substrate W1 held in the first holding part 110 and the second substrate W2 held in the second holding part 120 is adjusted in the horizontal direction (step S110).

[0122] Specifically, the center position (X and Y coordinates) of the second substrate W2 is determined based on the measurement results of the first interferometer 160 and the second interferometer 170. Then, the second substrate W2 is moved using the first moving part 131 and the second moving part 132 so that the center position of the second substrate W2 is aligned with the center position of the first substrate W1.

[0123] Next, the first substrate W1 and the second substrate W2 are bonded together (step S111).

[0124] First, the vertical position of the first substrate W1 held in the first holding portion 110 and the second substrate W2 held in the second holding portion 120 is adjusted. Specifically, the second moving portion 132 moves the second holding portion 120 vertically upward, thereby bringing the second substrate W2 closer to the first substrate W1.

[0125] Next, the adsorption and retention of the first substrate W1 by the multiple inner adsorption parts 116 are released, and then the pressing pin 191 of the striker 190 is lowered, thereby pressing down the center of the first substrate W1.

[0126] When the center portion of the first substrate W1 contacts the center portion of the second substrate W2, and the center portions of the first substrate W1 and the center portions of the second substrate W2 are pressed by the impact pin 190 with a predetermined force, bonding begins between the pressed center portions of the first substrate W1 and the center portions of the second substrate W2. That is, because the bonding surface W1j of the first substrate W1 and the bonding surface W2j of the second substrate W2 are modified, van der Waals forces (intermolecular forces) are first generated between the bonding surfaces W1j and W2j, causing bonding between the bonding surfaces W1j and W2j. Furthermore, because the bonding surface W1j of the first substrate W1 and the bonding surface W2j of the second substrate W2 are hydrophilized, hydrogen bonding occurs between the hydrophilic groups of the bonding surfaces W1j and W2j, and the bonding surfaces W1j and W2j are firmly bonded. In this way, a bonding region is formed.

[0127] Subsequently, a bonding wave is generated between the first substrate W1 and the second substrate W2, extending from the center of the first substrate W1 and the outer periphery of the second substrate W2. Then, the adhesion of the multiple outer adsorption portions 115 to the first substrate W1 is released. As a result, the outer periphery of the first substrate W1, held by the outer adsorption portions 115, falls off. Consequently, the bonding surface W1j of the first substrate W1 and the bonding surface W2j of the second substrate W2 come into full contact, forming an overlapping substrate T.

[0128] Next, the pressing pin 191 is raised to the first holding part 110, and the second holding part 120 releases the adsorption and holding of the second substrate W2. Then, the overlapping substrate T is removed from the bonding device 41 by the conveying device 61. In this way, a series of bonding processes are completed.

[0129]

[0130] Next, refer to Figure 9 and Figure 10 The following is an explanation of a variation of the second gas supply unit described above. Figure 9 This is a perspective view of the second gas supply section involved in the modified example. Additionally, Figure 10 This is a side cross-sectional view of the second gas supply section involved in the modified example.

[0131] like Figure 9 and Figure 10 As shown, the modified example of the second gas supply unit 180A includes a receiving part 184A, an inlet part 185A, and a nozzle 186A.

[0132] The housing 184A houses the second interferometer 170. The inlet 185A is a cylindrical portion that connects the interior of the housing 184A to the outside, and is provided, for example, on the side of the housing 184A. The inlet 185A is connected to the second gas supply source 183 via the second temperature adjustment unit 181 and the valve 182, and is used to introduce the second gas into the interior of the housing 184A. The nozzle 186A is provided on the side of the housing 184A facing the second moving part 132, and is used to spray the second gas introduced from the inlet 185A into the housing 184A.

[0133] The nozzle 186A, for example, has a single opening 186A1 from which a second gas is ejected, allowing light irradiated from the second interferometer 170 to pass through. The second gas ejected from the opening 186A1 flows parallel to the light irradiated from the second interferometer 170, in a manner that covers the light irradiated from the second interferometer 170. Thus, the light irradiated from the second interferometer 170 is protected by the second gas.

[0134] The opening 186A1 of the nozzle 186A extends in a slit shape along the Y-axis direction, which is the direction of the first gas ejection and the flow direction of the side flow. Furthermore, the second interferometer 170 is disposed inside the housing 184A at a position facing the downstream end of the opening 186A1, and illuminates light from the downstream end of the opening 186A1. Additionally, the second interferometer 170 need only be disposed at least downstream of the center of the opening 186A1 in the extension direction of the side flow.

[0135] Alternatively, a slit-shaped opening 186A1 extending along the flow direction of the side flow can be provided in the second gas supply section 180A, and the second gas can be ejected from a position upstream of the light irradiated from the second interferometer 170. This allows for more reliable protection of the light irradiated from the second interferometer 170.

[0136]

[0137] Next, refer to Figure 11 Let's explain a variation of the first gas supply unit. Figure 11 This is a side view of the coupling device involved in the modified example.

[0138] like Figure 11 As shown, the coupling device 41B in the modified example includes a first gas supply section 140B and an exhaust section 150B. The first gas supply section 140B is provided on the upper surface of the housing 100 and sprays the first gas vertically downward. In addition, the exhaust section 150B is provided on the bottom surface of the housing 100.

[0139] Alternatively, the joining device 41B can use a first gas supply section 140B and an exhaust section 150B to form a downward flow inside the housing 100. In this case, not only the light irradiated from the second interferometer 170, but also the light irradiated from the first interferometer 160 is orthogonal to the flow direction (Z-axis direction) of the downward flow. Therefore, the joining device 41B can also provide a second gas supply section 180 for the first interferometer 160, using the airflow of the second gas to protect the light irradiated from the first interferometer 160.

[0140] <Other variations>

[0141] In the above embodiments, an example was described where the light irradiated from the interferometer is orthogonal to the sideflow or downflow. However, this is not a limitation; the interferometer can irradiate light in a direction intersecting the ejection direction of the first gas from the first gas supply unit. In this case, the second gas supply unit can eject the second gas parallel to the light, i.e., in a direction intersecting the sideflow or downflow.

[0142] Furthermore, in the above embodiment, an example was described where the second gas supply unit ejects the second gas parallel to the light irradiated from the interferometer. However, this is not a limitation; the second gas supply unit may also eject the second gas from a direction intersecting with the light irradiated from the interferometer, specifically from a direction orthogonal to the light irradiated from the interferometer. In this case, it is preferable that the second gas supply unit ejects the second gas from a position upstream of the optical path of the light irradiated from the interferometer, relative to the sideflow or downflow. That is, it is preferable that the second gas supply unit ejects the second gas in the same direction as the sideflow or downflow.

[0143] As described above, the bonding apparatus according to the embodiments (41, 41B, for example) is used to bond substrates together. The bonding apparatus includes a first holding portion (110, for example), a second holding portion (120, for example), a moving portion (130, for example), a housing (100, for example), an interferometer (160, 170, for example), a first gas supply portion (140, 140B, for example), and a second gas supply portion (180, 180A, for example). The first holding portion is used to hold the first substrate (W1, for example) from above. The second holding portion is used to hold the second substrate (W2, for example) from below. The moving portion is used to move one of the holding portions of the first and second holding portions horizontally relative to the other holding portion. The housing houses the first holding portion, the second holding portion, and the moving portion. An interferometer is disposed inside the housing. The interferometer measures the horizontal distance to the holding part or the object by irradiating it with light (e.g., a laser) onto the holding part or an object that moves together with the holding part. A first gas supply unit supplies a purified first gas to the interior of the housing. A second gas supply unit supplies a second gas to the space between the irradiated holding part or the object and the interferometer.

[0144] Therefore, according to the bonding apparatus of the embodiment, the bonding accuracy between substrates can be improved in the bonding technology that bonds substrates together.

[0145] Alternatively, the second gas supply unit may eject the second gas parallel to the optical path in a manner that covers the optical path. This allows for proper protection of the light irradiated from the interferometer.

[0146] Alternatively, the interferometer irradiates light in a direction intersecting the ejection direction of the first gas from the first gas supply unit, and the second gas supply unit ejects a second gas in the same intersecting direction. The interferometer irradiating light in a direction intersecting the ejection direction of the first gas from the first gas supply unit is susceptible to the temperature of the first gas. Therefore, using an airflow of the second gas to protect the light irradiated in this direction appropriately protects the light irradiated from the interferometer.

[0147] Alternatively, a first gas supply unit (e.g., first gas supply unit 140) may be disposed on the side of the housing (e.g., side 100a), and eject the first gas along a first horizontal direction (e.g., the Y-axis direction). In this case, an interferometer (e.g., second interferometer 170) may irradiate light along a second horizontal direction orthogonal to the first horizontal direction (e.g., the X-axis direction), and the second gas supply unit may eject the second gas along the second horizontal direction.

[0148] Alternatively, a first gas supply unit (for example, a first gas supply unit 140B) may be provided on the upper surface of the housing, and the first gas may be ejected in the vertical direction (for example, the Z-axis direction).

[0149] Alternatively, the second gas supply unit may include: a housing (e.g., housing 184, 184A) housing an interferometer; an inlet (e.g., inlet 185, 185A) for introducing the second gas into the housing; and a nozzle (e.g., nozzle 186, 186A) disposed in the housing for ejecting the second gas introduced from the inlet into the housing. In this case, the interferometer may also irradiate light from inside the housing via the nozzle. Thus, the second gas supply unit can eject the second gas parallel to the light path in a manner that covers the light path.

[0150] Alternatively, the nozzle (for example, nozzle 186) may include: a first opening (for example, first opening 186a1) through which light passes; and an annular second opening (for example, second opening 186b1) configured to surround the first opening. In this case, the second gas supply unit may eject the second gas from the second opening. Alternatively, the nozzle (for example, nozzle 186A) may include an opening (for example, opening 186A1) extending along the ejection direction of the first gas. In this case, the interferometer may irradiate light from the downstream side of the opening. By ejecting the second gas from a position upstream of the light irradiated by the interferometer, the light irradiated by the interferometer can be protected more reliably.

[0151] Alternatively, the second gas supply unit may eject the second gas at a wind speed faster than the first gas ejected from the first gas supply unit. This allows for proper protection of the light irradiated from the interferometer from the influence of the first gas flow.

[0152] Alternatively, the first gas supply unit may include a first temperature measuring unit for measuring the temperature of the first gas, and the second gas supply unit may include a second temperature adjusting unit for adjusting the temperature of the second gas. In this case, the coupling device according to the embodiment may also include a control unit that controls the second temperature adjusting unit based on the measurement result of the first temperature measuring unit, thereby adjusting the temperature of the second gas to be the same as the temperature of the first gas.

[0153] Alternatively, the first gas supply unit may include a first temperature adjustment unit for adjusting the temperature of the first gas, and the second gas supply unit may include a second temperature measuring unit for measuring the temperature of the second gas. In this case, the coupling device according to the embodiment may also include a control unit that controls the first temperature adjustment unit based on the measurement result of the second temperature measuring unit, thereby adjusting the temperature of the first gas to be the same as the temperature of the second gas.

[0154] It should be considered that all points in the disclosed embodiments are illustrative rather than restrictive. The above embodiments can be practically implemented in various ways. In addition, the above embodiments can be omitted, substituted, or modified in various ways without departing from the appended claims and their spirit.

[0155] Explanation of reference numerals in the attached figures

[0156] 1: Bonding system; 30: Surface modification device; 40: Surface hydrophilization device; 41: Bonding device; 70: Control device; 100: Housing; 101: Stage; 102: Support column; 103: Top; 110: First holding part; 120: Second holding part; 130: Moving part; 131: First moving part; 131a: First guide rail; 132: Second moving part; 132a: Second guide rail; 140: First gas supply part; 141: First temperature adjustment part; 150: Exhaust part; 160: First interferometer; 170: Second interferometer; 180: Second gas supply part; 181: Second temperature adjustment part; 184: Receiving part; 185: Inlet part; 186: Nozzle; 186a1: First opening; 186b1: Second opening; LP: Optical path; T: Overlapping substrate; W1: First substrate; W2: Second substrate.

Claims

1. A bonding device for bonding substrates together, the bonding device comprising: A first holding portion is used to hold the first substrate from above; The second holding portion is used to hold the second substrate from below by adsorbing it. A moving part, which is used to move the holding part of one of the first holding part and the second holding part in a horizontal direction relative to the holding part of the other; A housing that houses the first retaining part, the second retaining part, and the movable part; An interferometer, disposed inside the housing, measures the horizontal distance to the holding part of one of the objects or the object by illuminating light onto the holding part of the one of the objects or an object that moves together with the holding part of the one of the objects; A first gas supply unit, used to supply the interior of the housing with a purified first gas; and A second gas supply unit is used to supply a second gas to the holding part of the object being irradiated by the light or the space between the object and the interferometer. The second gas supply unit ejects the second gas parallel to the optical path of the light, in a manner that covers the optical path of the light. The second gas supply unit includes: The containment section houses the interferometer. An inlet section for introducing the second gas into the containment section; and A nozzle, disposed in the receiving portion, is used to spray the second gas introduced from the inlet portion into the receiving portion. The interferometer irradiates light from inside the housing via the nozzle.

2. The joining device according to claim 1, characterized in that, The interferometer illuminates the light in a direction intersecting with the ejection direction of the first gas emitted from the first gas supply unit. The second gas supply unit ejects the second gas along the direction of the intersection.

3. The joining device according to claim 2, characterized in that, The first gas supply unit is disposed on the side of the housing, and sprays the first gas along the first horizontal direction. The interferometer illuminates the light along a second horizontal direction orthogonal to the first horizontal direction. The second gas supply unit ejects the second gas along the second horizontal direction.

4. The joining device according to claim 2, characterized in that, The first gas supply unit is disposed on the upper surface of the housing and sprays the first gas in the vertical direction.

5. The joining device according to claim 1, characterized in that, The nozzle has: A first opening, through which the light passes; and A second annular opening is configured to surround the first opening. The second gas supply unit ejects the second gas from the second opening.

6. The joining device according to claim 1, characterized in that, The nozzle has an opening extending along the ejection direction of the first gas.

7. The joining device according to claim 6, characterized in that, The interferometer illuminates the light from the downstream side of the opening.

8. The coupling device according to any one of claims 1 to 4, characterized in that, The second gas supply unit ejects the second gas at a wind speed that is faster than the wind speed of the first gas ejected from the first gas supply unit.

9. The coupling device according to any one of claims 1 to 4, characterized in that, The first gas supply unit includes a first temperature measuring unit for measuring the temperature of the first gas. The second gas supply unit includes a second temperature adjustment unit for adjusting the temperature of the second gas. The joining device also includes a control unit that controls the second temperature adjustment unit based on the measurement results of the first temperature measuring unit, thereby adjusting the temperature of the second gas to be the same as the temperature of the first gas.

10. The coupling device according to any one of claims 1 to 4, characterized in that, The first gas supply unit includes a first temperature adjustment unit for adjusting the temperature of the first gas. The second gas supply unit includes a second temperature measuring unit for measuring the temperature of the second gas. The joining device also includes a control unit that controls the first temperature adjustment unit based on the measurement results of the second temperature measuring unit, thereby adjusting the temperature of the first gas to be the same as the temperature of the second gas.

11. A joining system comprising: A surface modification apparatus for modifying the surfaces of a first substrate and a second substrate. A surface hydrophilization apparatus for hydrophilizing the surfaces of the modified first substrate and the second substrate; as well as A bonding device that bonds the hydrophilized first substrate and the second substrate together using intermolecular forces. The joining device includes: A first holding portion is used to hold the first substrate from above; The second holding portion is used to hold the second substrate from below; A moving part, which is used to move the holding part of one of the first holding part and the second holding part in a horizontal direction relative to the holding part of the other; A housing that houses the first retaining part, the second retaining part, and the movable part; An interferometer, disposed inside the housing, measures the horizontal distance to the holding part of one of the objects or the object by illuminating light onto the holding part of the object or an object that moves together with the holding part of the object. A first gas supply unit, used to supply the interior of the housing with a purified first gas; and A second gas supply unit is used to supply a second gas to the holding part of the object being irradiated by the light or the space between the object and the interferometer. The second gas supply unit ejects the second gas parallel to the optical path of the light, in a manner that covers the optical path of the light. The second gas supply unit includes: The containment section houses the interferometer. An inlet section for introducing the second gas into the containment section; and A nozzle, disposed in the receiving portion, is used to spray the second gas introduced from the inlet portion into the receiving portion. The interferometer irradiates light from inside the housing via the nozzle.

12. A bonding method for bonding substrates together, the bonding method comprising the following steps: The first substrate is held by adsorbing and holding the first substrate from above; The second substrate is held by adsorbing and holding the second substrate from below; as well as The positioning of the first and second holding portions in the horizontal direction is achieved using a moving part that allows one of the holding portions, the first holding portion and the second holding portion, to move horizontally relative to the other holding portion. Inside the housing housing the first holding part, the second holding part, and the moving part are arranged: an interferometer, which measures the horizontal distance to one of the holding parts or the object by irradiating light onto it; a first gas supply unit for supplying a purified first gas to the interior of the housing; and a second gas supply unit for supplying a second gas to the space between the irradiated holding part or the object and the interferometer. During the positioning process, the moving part is moved based on the measurement results of the interferometer. The second gas supply unit ejects the second gas parallel to the optical path of the light, in a manner that covers the optical path of the light. The second gas supply unit includes: The containment section houses the interferometer. An inlet section for introducing the second gas into the containment section; and A nozzle, disposed in the receiving portion, is used to spray the second gas introduced from the inlet portion into the receiving portion. The interferometer irradiates light from inside the housing via the nozzle.

Images