Heating device, CVD equipment and semiconductor process method

Abstract

The present invention provides a heating device for CVD equipment, comprising: an upper lamp module arranged above a reaction chamber and / or a lower lamp module arranged below the reaction chamber; the upper lamp module and the lower lamp module comprising an upper lamp array and a lower lamp array formed by a plurality of heating lamps; the substrate support platform and the substrate are heated by the upper lamp array and the lower lamp array; the heating lamp comprises a tubular lamp body and electrode terminals at both ends of the tubular lamp body, the electrode terminals in the upper lamp module and the lower lamp module being electrically connected upward and downward, respectively; a filament extending along the tubular lamp body is provided within the tubular lamp body; the upper lamp array and the lower lamp array can control the heating power in different zones. The present invention also includes a CVD device and a method for semiconductor process processing. The present invention can improve the thermal energy utilization rate of the heating device and can accurately control the heating power of each heating lamp, preventing cold spots between adjacent heating lamps and effectively ensuring a uniform temperature on the substrate surface.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a heating device, CVD equipment and a semiconductor process method. Background Art

[0002] In the semiconductor manufacturing industry, chemical vapor deposition (CVD) is a well-known process for forming thin film materials on substrates (such as silicon wafers). In the CVD process, gaseous molecules of the material to be deposited are provided to the wafer to form a thin film of the material on the wafer through a chemical reaction. The formed film can be polycrystalline, amorphous or epitaxial. Typically, the CVD process is performed at elevated temperatures to accelerate the chemical reaction and produce high-quality films. Some processes, such as epitaxial silicon deposition, are performed at very high temperatures (>500°C, <1220°C).

[0003] During the CVD process, one or more substrates are placed on a substrate support within a reaction chamber (defined within a reactor). For example, the substrate can be a wafer and the substrate support can be a susceptor. Both the substrate and, typically, the carrier are heated to a desired temperature. In a typical wafer processing step, reactant gases are passed over the heated wafer, resulting in chemical vapor deposition (CVD) of a thin layer of the desired material on the wafer. If the deposited layer has the same crystal structure as the underlying silicon wafer, it is called an epitaxial layer, sometimes also referred to as a single crystal layer. Through subsequent processing, these deposited layers are made into integrated circuits, producing tens of thousands to thousands or even millions of integrated circuit devices, depending on the size of the wafer and the complexity of the circuitry.

[0004] Various process parameters must be carefully controlled to ensure high-quality deposited layers in semiconductor processing. A key parameter is the temperature of the wafer during each processing step. For example, in the CVD process, because the deposition gases react and deposit on the wafer at a specific temperature, the wafer temperature determines the rate of material deposition on the wafer. If the temperature across the wafer surface varies, uneven deposition of the film occurs, and the physical properties across the wafer will be non-uniform. Furthermore, in epitaxial deposition, even slight temperature inhomogeneities can cause crystal slip. Summary of the Invention

[0005] The purpose of the present invention is to provide a heating device, CVD equipment and method. The heating device of the present invention provides radiant heat energy to the reaction chamber of the CVD equipment only through U-shaped heating lamps (no other special-shaped lamps are needed), which simplifies the layout of the upper and lower lamp arrays in the heating device. The present invention also effectively compensates for the cold spots between adjacent heating lamps by controlling the filament winding density of the heating lamps and the vertical setting of the heating lamps. The present invention also independently controls the total power of each area of ​​the upper and lower lamp arrays to achieve local control of the substrate temperature and effectively ensure uniform temperature on the substrate surface. Furthermore, the present invention also uses upper and lower reflective screens in conjunction with upper and lower lamp arrays to collect, reflect and focus light toward the substrate support platform, thereby improving the thermal energy utilization rate of the heating device.

[0006] To achieve the above-mentioned object, the present invention provides a heating device for use in a CVD apparatus, wherein a reaction chamber of the CVD apparatus includes a substrate carrying table for carrying a substrate, the heating device comprising: an upper lamp module arranged above the reaction chamber and / or a lower lamp module arranged below the reaction chamber;

[0007] The upper lamp module and the lower lamp module include an upper lamp array and a lower lamp array formed by a plurality of heating lamps; the substrate supporting platform and the substrate are heated by the upper lamp array and the lower lamp array;

[0008] The heating lamp includes a tubular lamp body and electrode ends located at both ends of the tubular lamp body. The electrode ends in the upper lamp module and the lower lamp module are electrically connected upward and downward respectively. A filament is provided in the tubular lamp body and extends along the tubular lamp body. The upper lamp array and the lower lamp array can control the heating power in different areas.

[0009] Optionally, the tubular lamp body includes two vertical heating sections and a horizontal heating section between the two vertical heating sections; the length direction of the horizontal heating section is the length direction of the heating lamp; the electrode end is located at one end of the vertical heating section; and the cold spots between adjacent heating lamps are compensated by adjacent vertical heating sections.

[0010] Optionally, the winding density of the filament in the vertical heating section is greater than the winding density of the filament in the horizontal heating section.

[0011] Optionally, the length direction of the heating lamps in the upper lamp array and the length direction of the heating lamps in the lower lamp array are perpendicular to each other.

[0012] Optionally, the length direction of the heating lamps in the upper lamp array is the same as the direction of the process airflow in the reaction chamber, and the length direction of the heating lamps in the lower lamp array is perpendicular to the direction of the process airflow; or, the length direction of the heating lamps in the upper lamp array is perpendicular to the direction of the process airflow, and the length direction of the heating lamps in the lower lamp array is the same as the direction of the process airflow in the reaction chamber.

[0013] Optionally, the upper light module and the lower light module further include an upper reflection screen and a lower reflection screen corresponding to the position of the substrate carrier, respectively, and the upper and lower reflection screens completely cover the substrate carrier; the upper light array and the lower light array are respectively installed at the bottom of the upper reflection screen and the top of the lower reflection screen; the upper and lower reflection screens collect the light emitted back to the substrate carrier and reflect it back to the substrate carrier.

[0014] Optionally, the areas on the bottom surface of the upper reflective screen, the top surface of the lower reflective screen and corresponding to the substrate supporting platform are diffuse reflection areas, and the other areas on the bottom surface of the upper reflective screen, the top surface of the lower reflective screen are mirror reflection areas.

[0015] Optionally, a plurality of fluid channels are provided inside the upper and lower reflective screens, and the temperatures of the upper and lower reflective screens are controlled by injecting cooling fluid into the gas channels.

[0016] Optionally, the upper reflective screen and the lower reflective screen are provided with a plurality of grooves, and the temperatures of the upper and lower reflective screens are controlled by injecting cooling gas into the grooves.

[0017] Optionally, the upper reflective screen and the lower reflective screen are further provided with a pair of plug-in interfaces, and the groove can be provided between the pair of plug-in interfaces.

[0018] Optionally, the bottom edge of the upper reflective screen is provided with a plurality of upwardly arched curved surfaces facing the substrate, and the heating lamps on the bottom edge of the upper reflective screen are respectively arranged in the corresponding curved surfaces; the bottom edge of the lower reflective screen is provided with a plurality of downwardly arched curved surfaces facing the substrate, and the heating lamps on the bottom edge of the lower reflective screen are respectively arranged in the corresponding curved surfaces; light is focused toward the substrate supporting platform through the curved surfaces.

[0019] Optionally, every two adjacent heating lamps in the upper lamp array and the lower lamp array are grouped as a group, and the power of each group of heating lamps is independently controlled.

[0020] Optionally, the upper lamp array is divided into a middle area and edge areas located on both sides of the middle area; the length of the heating lamps in the middle area is greater than that of the heating lamps in the edge areas.

[0021] Optionally, there is at least one row of heating lamps in the lower lamp array, and the length of the heating lamps in the row is shorter than the lengths of the other heating lamps.

[0022] The present invention also provides a CVD device, comprising:

[0023] reaction chamber;

[0024] A rotatable substrate carrying table disposed in the reaction chamber, for fixing the substrate;

[0025] The heating device according to the present invention is arranged above the reaction chamber and / or below the reaction chamber.

[0026] The present invention further provides a semiconductor process method, which is implemented using the CVD equipment of the present invention, comprising:

[0027] The substrate is placed on the substrate carrier, the heating device of the CVD equipment is started, and the substrate process is performed;

[0028] The power of the heating lamps is adjusted independently to achieve uniform temperature distribution on the substrate surface.

[0029] Optionally, the semiconductor process method further comprises:

[0030] The upper lamp array and the lower lamp array are divided into several areas, each area contains at least one heating lamp; and the total power of each area is independently controlled.

[0031] Optionally, the area includes a middle area and an edge area, and the edge area is temperature-controlled independently of the middle area.

[0032] Optionally, in the upper lamp array, the total power of the area decreases along the direction of the process airflow.

[0033] Optionally, the lower reflective screen is provided with a through hole, and the rotating drive shaft of the substrate supporting platform vertically passes through the through hole and is fixedly connected to the bottom of the substrate supporting platform; in the lower lamp array, the power of the heating lamps around the through hole is greater than the power of other heating lamps.

[0034] Compared with the prior art, the present invention has the following beneficial effects:

[0035] 1) The heating device of the present invention does not need to use other special-shaped lamps to provide radiant heat energy to the reaction chamber of the CVD equipment, which simplifies the layout of the upper and lower lamp arrays in the heating device;

[0036] 2) Compared to long lamps that span the diameter of the substrate support platform, the present invention uses multiple shorter heating lamps to heat the substrate support platform. By independently controlling the power of each heating lamp, the substrate surface temperature can be locally controlled, solving the problem of uneven temperature in specific areas of the substrate surface. At the same time, the heating lamps of the present invention have shorter filaments than long lamps, so the filaments in the heating lamps are less likely to sag, thereby increasing the service life of the heating lamps.

[0037] 3) By making the filament winding density of the vertical heating segments of the heating lamps greater than that of the horizontal heating segments, the present invention effectively compensates for cold spots between adjacent heating lamps. Furthermore, because the vertical heating segments have a small projected area on the substrate, the vertical heating segments can also achieve localized compensation of the substrate temperature within a very small range.

[0038] 4) The present invention divides the upper and lower lamp arrays into multiple areas (groups) and independently controls the total power of each area (group), thereby achieving local control of the substrate temperature, effectively ensuring uniform substrate temperature, and improving substrate yield;

[0039] 5) The upper and lower reflective screens of the present invention better collect, reflect, and focus light for the substrate supporting platform through the diffuse reflection area corresponding to the substrate supporting platform, the mirror reflection area located outside the diffuse reflection area, and the arc section facing the substrate supporting platform, thereby effectively improving the thermal energy utilization rate of the heating device;

[0040] 6) A reflective screen is provided in the reaction chamber of the present invention to effectively prevent heat loss in the reaction chamber;

[0041] 7) The upper and lower reflective screens of the present invention are provided with fluid channels and grooves for injecting cooling gas or liquid, which can effectively control the temperature of the upper and lower reflective screens and prevent safety accidents caused by excessive temperature of the upper and lower reflective screens. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] In order to more clearly illustrate the technical solution of the present invention, the following briefly introduces the drawings required for the description. Obviously, the drawings described below are one embodiment of the present invention. Those skilled in the art can also derive other drawings based on these drawings without inventive effort:

[0043] Figure 1 is a schematic diagram of a CVD device;

[0044] Figure 2 is a schematic diagram of the CVD apparatus of the present invention;

[0045] Figure 3 This is a schematic diagram of the heating lamp in Example 1;

[0046] Figure 3A A schematic diagram of a heating lamp with an inclined vertical heating section;

[0047] Figure 3B 、 Figure 3C Schematic diagrams of heating lamps with curved and arc-shaped horizontal heating sections respectively;

[0048] Figure 3D 、 Figure 3E Bottom views of the upper lamp arrays using curved and arc-shaped horizontal heating sections respectively;

[0049] Figure 4 This is a bottom view of the upper light module in Example 1;

[0050] Figure 5 This is a top view of the lower light module in Example 1;

[0051] Figure 5A for Figure 5 The partial schematic diagram within the virtual circle;

[0052] Figure 6 This is a schematic diagram of the area division of the upper light array in Example 1;

[0053] Figure 7 This is a schematic diagram of the area division of the lower light array in Example 1;

[0054] Figure 8 Schematic diagram of the mirror reflection area and diffuse reflection area of ​​the upper reflective screen in Example 1;

[0055] Figure 9 Schematic diagram of the mirror reflection area and diffuse reflection area of ​​the lower reflective screen in Example 1;

[0056] Figure 10 Schematic diagram of the arc segment of the upper reflective screen in Example 1;

[0057] Figure 11 Schematic diagram of the arc segment of the lower reflective screen in Example 1;

[0058] Figure 12 A schematic diagram of a portion of the structure of the upper reflective screen in the first embodiment;

[0059] Figure 13 This is a bottom view of the upper light module in Example 2;

[0060] Figure 14 This is a bottom view of the upper light module in Example 2;

[0061] Figure 15 The present invention is a flow chart of a semiconductor process method. DETAILED DESCRIPTION

[0062] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0063] The device / component of the present invention is primarily applicable to CVD equipment, particularly CVD equipment, such as MOCVD equipment, in which the wafer holder (sometimes referred to in the industry as a "substrate tray") used to secure the substrate during the deposition process rotates at a constant speed to improve deposition quality. It should be noted that the term "CVD equipment" should be understood broadly to include epitaxial growth equipment.

[0064] like Figure 1 The CVD apparatus 10 shown includes a horizontal flow-shaped reaction chamber 112 formed of a material transparent to heat energy. Process gas flows into the reaction chamber 112 from an inlet 140 in the direction indicated by the arrow and flows out from an outlet 142. The reaction chamber 112 has a top wall at the top, a bottom wall at the bottom, and side walls extending between the top wall and the bottom wall. A plurality of heating lamps 130 are arranged in an upper heating chamber 136 / lower heating chamber 138 above / below the reaction chamber to provide heat energy to the reaction chamber 112. A substrate support structure 120 is provided in the reaction chamber, and the substrate support structure 120 includes: a substrate carrier 110, a bracket 122, a rotating drive shaft 124 and a sealing tube 126.

[0065] The substrate carrier 110 is arranged in the reaction chamber for carrying substrate W. The bracket 122 is arranged in the reaction chamber and is located below the substrate carrier 110 for supporting the substrate carrier 110. The bracket 122 can be made of non-metallic materials to reduce the risk of contamination. The bracket 122 is installed on the top of the rotation drive shaft 124, and the bottom of the rotation drive shaft 124 vertically passes through the bottom wall of the reaction chamber 112, the lower heating chamber 138 and is located outside the CVD device 10. The sealing tube 126 is sleeved on the outside of the rotation drive shaft 124, and the sealing device (not shown) arranged between the sealing tube 126 and the rotation drive shaft 124 is used to isolate the reaction chamber environment from the atmospheric environment. The rotation drive shaft 124, the bracket 122 and the substrate carrier 110 rotate together around the central axis of the rotation drive shaft 124 during the substrate processing process. The rotation drive shaft 124 can be driven by an external motor (not shown).

[0066] During the substrate processing process, the heating lamps 130 in the upper heating chamber 136 and the lower heating chamber 138 are used to make the substrate W reach the required high temperature. However, due to the asymmetry of the chamber environment and the influence of the gas flow, even if a long symmetrical light source arranged in this way is used, the radiation received by the substrate W will be uneven, and thus its temperature distribution will be uneven. In addition, the regional adjustment of the long discrete light source is limited. It is subject to the overall length of the long light source and cannot accurately compensate for the temperature unevenness in a small range on the substrate W. During the substrate processing, the substrate W and the substrate carrier 110 can absorb part of the heat from the heating lamp 130, and the other part of the heat from the heating lamp 130 is lost to the surrounding environment through convection and conduction (such as heat loss caused by heat transfer between the inner wall of the reaction chamber and the atmospheric environment). The heat loss in different surrounding environments is different, which can easily cause the temperature in the reaction chamber to be difficult to accurately control. On the other hand, the process gas has not been fully heated when it just enters the reaction chamber 112, and there are inevitably "cold spots" around the rotating drive shaft 124, which can easily cause uneven temperature distribution in the reaction chamber. How to solve the above problems is the key to ensure uniform substrate temperature.

[0067] Example 1

[0068] The present invention provides a heating device, such as Figure 2 As shown, it is used for a CVD device 20, and the reaction chamber of the CVD device 20 includes a substrate carrying table 260 for carrying a substrate W. The substrate carrying table 260 is driven to rotate around the central axis of the rotating driving shaft 224 by the rotating driving shaft.

[0069] The heating device includes an upper lamp module 210 disposed above the reaction chamber and / or a lower lamp module 220 disposed below the reaction chamber.

[0070] The upper light module 210 includes an upper light array and an upper reflective screen 212. The upper light array is mounted on the bottom of the upper reflective screen. The lower light module 220 includes a lower light array and a lower reflective screen 222. The lower light array is mounted on the top of the lower reflective screen.

[0071] The upper and lower lamp arrays include multiple heating lamps 230. These arrays heat the substrate support platform 260 and substrate W. The power of each heating lamp 230 can be independently controlled. The multiple heating lamps in the upper and lower arrays can be zoned as needed, with lamps in the same area controlled uniformly. Cold spots between adjacent heating lamps 230 are compensated for by the sidewalls of the lamps. Furthermore, the ends of the heating lamps in the upper array are electrically connected upward, while the ends of the heating lamps in the lower array are electrically connected downward. This prevents internal high temperatures from damaging the electrically connected components. This achieves more precise zone control for the upper and lower arrays while also improving the lifespan and stability of each lamp.

[0072] The heating lamp 230 includes a tubular lamp body, two closed ends 235 and two electrode ends 236. The tubular lamp body is provided with a filament 234 extending along the tubular lamp body. Figure 3As shown, the heater lamp 230 in this embodiment has a U-shaped structure, comprising two opposing vertical heating sections 231 and a horizontal heating section 232 connected between the two vertical heating sections 231. The length of the horizontal heating section 232 is the same as the length of the heater lamp 230. In this embodiment, the horizontal heating section 232 of the heater lamp 230 is a linear structure and parallel to the horizontal plane. The vertical heating section 231 is perpendicular to the horizontal plane. The two closed ends 235 are used to seal the ends of the tubular lamp body. The two electrode terminals 236 are fixed to the two closed ends 235, and the two ends of the filament 234 pass through the two closed ends 235 and are electrically connected to the two electrode terminals 236. The electrode terminals 236 in the upper lamp module 210 and the lower lamp module 220 are respectively embedded in the upper reflective screen 212 and the lower reflective screen 222, facing upward and downward, and are electrically connected to the circuits installed in the upper reflective screen 212 and the lower reflective screen 222. The electrode end is installed in the reflective screen, which can not only prevent the electrode end from being exposed to the heating space and damaged, but also realize the control of the heating lamp in a smaller unit. At the same time, by controlling the temperature of the upper reflective screen 212 and the lower reflective screen 222, the high temperature generated by heating can be avoided from damaging the electrode end 236.

[0073] It should be emphasized that the present invention does not limit the vertical heating section 231 to be strictly perpendicular to the horizontal plane. The vertical heating section can heat in the vertical direction, such as Figure 3A As shown, it can also form a certain angle with the vertical direction, as long as it can achieve temperature compensation of the surrounding area in the vertical direction. The present invention does not limit the shape of the horizontal heating section 232. The function of the horizontal heating section is to radiate heat energy toward the plane where the wafer is located, such as Figure 3B 、 Figure 3C As shown, the horizontal heating segments 232 may be wavy, arc-shaped, or any other shape, as long as they can achieve horizontal heating. In a preferred embodiment, the horizontal heating segments 232 of the upper lamp array are all located in the first plane, and the horizontal heating segments 232 of the lower lamp array are all located in the second plane.

[0074] Figure 3D 、 Figure 3E In other embodiments, the heating lamps need not be arranged parallel to one another. Alternatively, the lamps can be arranged in a pentagonal or circular pattern, as shown in the bottom view of the upper lamp array, which utilizes linear or curved horizontal heating segments 232. In these embodiments, the heating lamps can be grouped into the same heating zone based on practical needs. The power to the same zone can be controlled uniformly, while maintaining heating power differences between zones. For example, this can be used to measure deposition effects on wafer surfaces or simulate airflow distribution, allowing for the planning of heating zone division and control strategies.

[0075] like Figure 3As shown, in this embodiment, the winding density of the filament 234 within the vertical heating segment 231 is greater than that within the horizontal heating segment 232. Thus, adjacent vertical heating segments 231 can compensate for cold spots created by gaps between adjacent heating lamps 230, resolving the issue of uneven heating of the substrate surface caused by zoned temperature control. Furthermore, because the vertical heating segments 231 project a small area onto the substrate W, their temperature impact range is limited. Therefore, the vertical heating segments 231 can also achieve localized compensation of the substrate temperature within a smaller area.

[0076] The length direction of the heating lamps 230 in the upper lamp array is perpendicular to the length direction of the heating lamps 230 in the lower lamp array, compensating for the radiation difference caused by arranging the heating lamps in one direction on one side of the array, and achieving basically uniform temperature on the entire substrate W during the processing of the substrate W.

[0077] In this embodiment, if Figure 4 As shown, the length direction of the heating lamps 230 in the upper lamp array is perpendicular to the process air flow direction. Figure 5 As shown, the length direction of the heating lamps 230 in the lower lamp array is the same as the direction of the process gas flow in the reaction chamber 22. This arrangement not only allows for progressive control of the temperature of the process gas after entering the chamber, achieving uniform substrate temperature, but also prevents turbulence in the process gas flow.

[0078] Each row and column of the upper lamp array and the lower lamp array includes a plurality of heating lamps 230, and the length of the heating lamp 230 is shorter than the diameter of the substrate support platform 260. Compared with the long lamp that spans the diameter of the substrate support platform, the heating lamp 230 of the present invention is shorter in length, so that local control of the substrate surface temperature can be achieved by independently controlling the power of each heating lamp 230. By adjusting the temperature of a small specific area on the substrate W without affecting the temperature of the adjacent areas, the problem of uneven temperature in a specific area of ​​the substrate is solved, and the control accuracy of the substrate temperature is improved. At the same time, the heating lamp 230 has a shorter filament 234 than a long lamp, so the filament 234 in the heating lamp 230 is not easy to sag, which increases the service life of the heating lamp 230.

[0079] like Figure 4 As shown, in this embodiment, the upper lamp array includes 11 rows and 4 columns of heating lamps 230, and the heating lamps 230 in the upper lamp array have substantially the same length.

[0080] like Figure 5 As shown, the lower lamp array includes 13 rows of heating lamps 230. The lower reflective screen 222 has a through hole 240, through which the rotation drive shaft 224 of the substrate support platform 260 passes vertically, fixedly connected to the bottom of the substrate support platform. The seventh row of heating lamps 230 in the middle is shorter than the other rows because it avoids the rotation drive shaft 224.

[0081] Due to the inevitable existence of "cold spots" around the rotating drive shaft 224. Figure 5A for Figure 5 The local schematic diagram within the range shown by the dotted circle. Figure 5A As shown, to compensate for the “cold spot” around the rotating drive shaft 224 , the power of the six heating lamps 230 around the through hole 240 in the lower lamp array is greater than the power of the other heating lamps 230 in the lower lamp array.

[0082] In the present invention, the upper and lower lamp arrays are each divided into several zones, each containing at least one heating lamp 230. By independently adjusting the total power of each zone, localized control of the substrate surface temperature is achieved. The length and number of heating lamps 230 within a zone determine the temperature control range of the substrate W.

[0083] Figure 6 、 Figure 7 In this embodiment, each area of ​​the upper lamp array includes two or one heating lamp 230 , and each area of ​​the lower lamp array includes two or four heating lamps 230 .

[0084] Figure 6 Letters A through N in the diagram represent corresponding areas of the upper lamp array with the same total power. Because the process airflow temperature near the air inlet is lower, the total power in the area near the air inlet of the upper lamp array is higher than that in other areas. Alternatively, the total power of the areas within the upper lamp array decreases along the direction of the process airflow.

[0085] Figure 7 The letters a to m in the table represent the corresponding areas of the lower lamp array with the same total power. Figure 6 、 Figure 7 As shown, the projection of the virtual first axis of symmetry on substrate support platform 260 passes through the center of the substrate support platform, and the extension direction of the first axis of symmetry o-o' is the direction of process airflow. In this embodiment, each area of ​​the upper and lower lamp arrays is symmetrically arranged along the first axis of symmetry, and the total power of the symmetrical areas is the same.

[0086] like Figure 2 As shown, the upper reflective screen 212 and the lower reflective screen 222 correspond to the positions of the substrate support platform 260 and completely cover the substrate support platform 260 (the substrate support platform 260 does not extend from the edges of the upper reflective screen 212 and the lower reflective screen 222). The upper reflective screen 212 and the lower reflective screen 222 collect light emitted away from the substrate support platform 260 and reflect it back to the substrate support platform 260, thereby improving the thermal energy utilization rate of the heating lamp 230. In this embodiment, the bottom surface of the upper reflective screen and the top surface of the lower reflective screen are both provided with a metal coating for reflecting light. In this embodiment, the material of the metal coating is gold.

[0087] like Figure 8 As shown, the area corresponding to the bottom surface of the upper reflective screen and the substrate supporting platform 260 is a diffuse reflection area ( Figure 8 The other areas on the bottom of the upper reflective screen are mirror reflection areas ( Figure 8 (outside the virtual circle). Figure 9 The area corresponding to the bottom surface of the upper reflective screen, the top surface of the lower reflective screen and the substrate support platform 260 is a diffuse reflection area ( Figure 9 The other areas on the top of the lower reflective screen are mirror reflection areas ( Figure 9 outside the virtual circle).

[0088] The surface roughness of the diffuse reflection area is evenly distributed. The diffuse reflection area ensures that the light reflected toward the substrate W is evenly distributed. The mirror reflection area improves the light reflectivity, prevents edge heat loss, and directionally reflects light that exceeds the substrate edge back to the substrate area, ensuring that the temperature in the reaction chamber meets the set requirements.

[0089] The bottom edge of the upper reflective screen is provided with several upwardly arched curved surfaces 250 facing the substrate W. The heating lamps 230 at the bottom edge of the upper reflective screen are respectively arranged in corresponding curved surfaces 250. The bottom edge of the lower reflective screen is provided with several downwardly arched curved surfaces 250 facing the substrate W. The heating lamps 230 at the bottom edge of the lower reflective screen are respectively arranged in corresponding curved surfaces 250. These curved surfaces 250 are used to focus light and heat on the substrate support platform 260.

[0090] In this embodiment, Figure 2 、 Figure 10 As shown, the upper reflective screen 212 has four curved surfaces 250. The length direction of the curved surfaces 250 is the same as the length direction of the U-shaped lamps (perpendicular to the direction of process airflow). The heating lamps 230 of the first, second, tenth, and eleventh rows of the upper lamp array are respectively mounted within the four curved surfaces 250, with one curved surface 250 corresponding to one row of heating lamps 230. It should be emphasized that a curved surface 250 can include both specular reflection areas and diffuse reflection areas.

[0091] like Figure 11 As shown, the lower reflective screen 222 is also provided with four curved surfaces 250. The length direction of the curved surface 250 is the same as the length direction of the U-shaped lamp (the same as the direction of the process airflow). The heating lamps 230 of the first, second, twelfth and thirteenth columns of the lower lamp array are respectively installed in the four curved surfaces 250. One curved surface 250 corresponds to one column of heating lamps 230.

[0092] Figure 12 FIG shows a portion of the upper reflective screen 212 (the bottom of the portion is provided with an arc surface). Figure 12As shown, the upper reflective screen 212 is further provided with a plurality of fluid channels 2121. By circulating a cooling fluid through the fluid channels 2121, the temperatures of the upper reflective screen 212 and the lower reflective screen 222 are controlled, thereby preventing the upper and lower reflective screens 212 and 222 from overheating and potentially causing safety accidents. In this embodiment, the fluid is preferably a liquid. The lower reflective screen is also provided with fluid channels 2121 for temperature control.

[0093] like Figure 12 As shown, the top surface of the upper reflector is provided with a plurality of grooves 2122. The temperature of the upper reflector is controlled by introducing cooling air above the upper reflector and allowing the cooling air to flow along the grooves 2122. The bottom surface of the lower reflector is also provided with grooves 2122 for air cooling. Figure 12 The figure also shows the plug-in port 2361 of the electrode end 236. A groove can also be set between a pair of plug-in ports 2361 corresponding to a heating lamp 230, so that the cooling gas blown on the back of the reflective screen can flow into the groove on the front of the reflective screen through the gap of the plug-in port 2361, thereby helping to control the temperature of the entire reflective screen.

[0094] Example 2

[0095] In this embodiment, if Figure 13 The length direction of the heating lamps 230 in the upper lamp array is the same as the direction of the process gas flow in the reaction chamber. Figure 14 As shown, the length direction of the heating lamps 230 in the lower lamp array is perpendicular to the direction of the process airflow. This arrangement can also uniformly heat the process airflow in the reaction chamber, achieve uniform substrate temperature, and prevent turbulence in the process airflow.

[0096] In this embodiment, Figure 13 As shown, the upper lamp array is divided into a central region and edge regions located on either side of the central region, along the direction of process airflow. In the upper lamp array, the length of the heating lamps 230 in the central region is greater than that in the edge regions. By independently controlling the temperature of the edge and central regions, localized control of the substrate surface temperature is achieved.

[0097] like Figure 14 As shown, the lower lamp array is divided into a central region and edge regions on either side of the central region, along the direction of process airflow. Within the lower lamp array, the heating lamps 230 in the central region and the heating lamps 230 surrounding the rotating drive shaft 224 have a first length, while the remaining heating lamps 230 have a second length, with the first length being greater than the second length. In the lower lamp array, independent temperature control is implemented not only for the edge and central regions but also for the heating lamps 230 surrounding the rotating drive shaft 224.

[0098] The present invention also provides a CVD device 20, such as Figure 2As shown, including:

[0099] Reaction chamber 22;

[0100] A rotatable substrate carrier 260 disposed in the reaction chamber, for fixing a substrate W;

[0101] The heating device according to the present invention is arranged above the reaction chamber and / or below the reaction chamber.

[0102] A reflective screen is fixedly mounted on the inner wall of the reaction chamber 22, and a metal coating is applied to the surface of the reflective screen. The metal coating prevents heat loss caused by heat transfer between the inner wall of the reaction chamber and the ambient environment. In this embodiment, the metal coating is made of gold.

[0103] The present invention also provides a semiconductor process method, which is implemented using the CVD device 20 of the present invention. Figure 15 As shown, the method comprises:

[0104] Place the substrate W on the substrate carrier 260, start the heating device of the CVD device 20, and perform substrate processing;

[0105] The power of the heating lamps 230 is adjusted independently to achieve uniform temperature distribution on the substrate surface.

[0106] In one embodiment of the present invention, the upper lamp array and the lower lamp array are divided into several areas, each of which contains at least one heating lamp 230; and the total power of each area is independently controlled.

[0107] In another embodiment of the present invention, the region includes a middle region and an edge region, and the edge region is temperature-controlled independently of the middle region.

[0108] In another embodiment of the present invention, along the process airflow direction, the total regional power of the upper lamp array decreases. In the lower lamp array, the power of the heating lamps 230 around the rotating drive shaft 224 is greater than the power of other heating lamps 230.

[0109] The heating device of the present invention provides radiant heat energy to the reaction chamber of the CVD apparatus 20 using only the heating lamps 230 (without the use of other special-shaped lamps). The layout of the upper and lower lamp arrays not only achieves uniform substrate temperature but also prevents turbulence in the process airflow.

[0110] The present invention achieves local control of the substrate surface temperature by independently controlling the power of the heating lamps 230 according to the area (group), thereby solving the problem of uneven temperature in a specific area of ​​the substrate surface.

[0111] The present invention effectively compensates for the cold spots formed by the gaps between adjacent heating lamps 230 by making the filament winding density of the vertical heating section 231 of the heating lamp greater than the filament winding density of the horizontal heating section 232 .

[0112] The upper and lower reflective screens 212 and 222 of the present invention utilize diffuse reflection areas corresponding to the substrate support platform 260, mirror reflection areas located outside the diffuse reflection areas, and arc-shaped sections directed toward the substrate support platform 260 to effectively collect, reflect, and focus light on the substrate support platform 260, effectively improving the thermal energy utilization efficiency of the heating device. Cooling gas channels are also provided within the upper and lower reflective screens 212 and 222, effectively controlling their temperatures and preventing safety accidents.

[0113] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in the present invention, and such modifications or substitutions are intended to be within the scope of protection of the present invention. Therefore, the scope of protection of the present invention shall be subject to the scope of protection of the claims.

Claims

1. A heating device for a CVD device, wherein the reaction chamber of the CVD device comprises a substrate carrying table for carrying a substrate, characterized in that: The heating device comprises: an upper lamp module arranged above the reaction chamber and / or a lower lamp module arranged below the reaction chamber; The upper lamp module and the lower lamp module include an upper lamp array and a lower lamp array formed by a plurality of heating lamps; the substrate supporting platform and the substrate are heated by the upper lamp array and the lower lamp array; The heating lamp includes a tubular lamp body, two closed ends, and electrode terminals located at both ends of the tubular lamp body. The ends of the tubular lamp body in the upper lamp module and the lower lamp module are bent upward and downward, respectively, and the electrode terminals in the upper lamp module and the lower lamp module are electrically connected upward and downward, respectively. A filament is provided in the tubular lamp body and extends along the tubular lamp body. The upper lamp array and the lower lamp array can control the heating power in different zones. The two closed ends are respectively used to seal the two ends of the tubular lamp body, and the two electrodes are respectively provided on the two closed ends; The tubular lamp body includes two vertical heating sections and a horizontal heating section between the two vertical heating sections; the length direction of the horizontal heating section is the length direction of the heating lamp; and the cold spots between adjacent heating lamps are compensated by adjacent vertical heating sections.

2. The heating device according to claim 1, wherein The winding density of the filament in the vertical heating section is greater than the winding density of the filament in the horizontal heating section.

3. The heating device according to claim 1, wherein The length direction of the heating lamps in the upper lamp array and the length direction of the heating lamps in the lower lamp array are perpendicular to each other.

4. The heating device according to claim 3, characterized in that The length direction of the heating lamps in the upper lamp array is the same as the direction of the process air flow in the reaction chamber, and the length direction of the heating lamps in the lower lamp array is perpendicular to the direction of the process air flow; or, the length direction of the heating lamps in the upper lamp array is perpendicular to the direction of the process air flow, and the length direction of the heating lamps in the lower lamp array is the same as the direction of the process air flow in the reaction chamber.

5. The heating device according to claim 1, wherein The upper light module and the lower light module further include an upper reflective screen and a lower reflective screen respectively corresponding to the position of the substrate carrier, and the upper and lower reflective screens completely cover the substrate carrier; The upper lamp array and the lower lamp array are respectively installed at the bottom of the upper reflective screen and the top of the lower reflective screen; the light emitted back to the substrate supporting platform is collected by the upper and lower reflective screens and reflected back to the substrate supporting platform.

6. The heating device according to claim 5, characterized in that The areas on the bottom surface of the upper reflective screen, the top surface of the lower reflective screen and the substrate supporting platform corresponding to the diffuse reflection area, and the other areas on the bottom surface of the upper reflective screen and the top surface of the lower reflective screen are mirror reflection areas.

7. The heating device according to claim 5, characterized in that A plurality of fluid channels are provided inside the upper and lower reflection screens, and the temperatures of the upper and lower reflection screens are controlled by injecting cooling fluid into the fluid channels.

8. The heating device according to claim 5, wherein The upper reflective screen and the lower reflective screen are provided with a plurality of grooves, and the temperatures of the upper and lower reflective screens are controlled by injecting cooling gas into the grooves.

9. The heating device according to claim 8, characterized in that The upper reflective screen and the lower reflective screen are further provided with a pair of plug-in interfaces, and the groove can be provided between the pair of plug-in interfaces.

10. The heating device according to claim 5, wherein The bottom edge of the upper reflective screen is provided with a plurality of upwardly arched arc surfaces facing the substrate, and the heating lamps on the bottom edge of the upper reflective screen are respectively arranged in the corresponding arc surfaces; The bottom edge of the lower reflective screen is provided with several downwardly arched arc surfaces facing the substrate, and the heating lamps on the bottom edge of the lower reflective screen are respectively arranged in the corresponding arc surfaces; the arc surfaces are used to focus light toward the substrate supporting platform.

11. The heating device according to claim 1, wherein Every two adjacent heating lamps in the upper lamp array and the lower lamp array are grouped together, and the power of each group of heating lamps is independently controlled.

12. The heating device according to claim 1, wherein The upper lamp array is divided into a middle area and edge areas located on both sides of the middle area; the length of the heating lamps in the middle area is greater than that of the heating lamps in the edge areas.

13. The heating device according to claim 1, wherein There is at least one row of heating lamps in the lower lamp array, and the length of the heating lamps in the row is shorter than the lengths of the other heating lamps.

14. A CVD device, characterized in that: include: reaction chamber; A rotatable substrate carrying table disposed in the reaction chamber, for fixing the substrate; A heating device according to any one of claims 1 to 13, arranged above and / or below the reaction chamber.

15. A semiconductor processing method, implemented by the CVD apparatus according to claim 14, characterized in that: Include: The substrate is placed on the substrate carrier, the heating device of the CVD equipment is started, and the substrate process is performed; The power of the heating lamps is adjusted independently to achieve uniform temperature distribution on the substrate surface.

16. The semiconductor process method according to claim 15, wherein: Also includes: The upper lamp array and the lower lamp array are divided into several areas, each area contains at least one heating lamp; and the total power of each area is independently controlled.

17. The semiconductor processing method according to claim 15, wherein: The area includes a middle area and an edge area, and the edge area is temperature-controlled independently of the middle area.

18. The semiconductor processing method according to claim 15, wherein: In the upper lamp array, the total power of the area decreases along the direction of process airflow.

19. The semiconductor processing method according to claim 15, wherein: The lower reflective screen is provided with a through hole, and the rotating drive shaft of the substrate supporting platform vertically passes through the through hole and is fixedly connected to the bottom of the substrate supporting platform; in the lower lamp array, the power of the heating lamps around the through hole is greater than the power of other heating lamps.

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