Array-type field-effect transistor photoelectric sensor and method for identifying wavelength of unknown light source

Abstract

The present invention provides an array-type field-effect transistor photoelectric sensor and a method for identifying the wavelength of an unknown light source. The array-type field-effect transistor photoelectric sensor includes a field-effect transistor I, a field-effect transistor II, a field-effect transistor III, a field-effect transistor IV, and a field-effect transistor V that are sequentially arranged on a substrate. The field-effect transistor I, the field-effect transistor II, the field-effect transistor III, the field-effect transistor IV, and the field-effect transistor V respectively correspond to different peak wavelengths, forming an array-type field-effect transistor photoelectric sensor with a peak wavelength gradient from 2.7 μm to 3.9 μm. Based on the array-type field-effect transistor photoelectric sensor, the present invention can detect the wavelength and energy of an unknown light source with a peak wavelength within 2.7 μm to 3.9 μm.

Description

Technical Field

[0001] The present invention relates to the technical field of field-effect transistor photoelectric sensors. Specifically, it relates to an array-type field-effect transistor photoelectric sensor and a method for identifying the wavelength of an unknown light source. Background Art

[0002] An optoelectronic infrared sensor refers to the fact that some semiconductor materials generate the photoelectric effect under the irradiation of infrared radiation, thereby changing the electrical characteristics of the materials. By measuring the changes in the electrical characteristics, the intensity of infrared radiation is determined. When a semiconductor material absorbs incident photons, some electrons and holes in the semiconductor material change from the original non-conductive bound state to the conductive free state, thereby increasing the conductivity of the semiconductor. This phenomenon is called the photoconductive effect. An infrared sensor made using the photoconductive effect of a semiconductor is called a photoconductive sensor; this type of sensor has high sensitivity, fast response speed, and high response frequency, and is also the most numerous and widely used type of photodetector currently.

[0003] The use of field-effect transistors to fabricate microstructural sensors has emerged in recent years with the development of microelectronic IC technology and MEMS. Replacing the gate metal in a conventional MOSFET with a conductive polymer forms a chemical field-effect transistor sensor with a polymer MOSFET structure, which can avoid the problem of difficult conductance measurement in measurement.

[0004] It should be noted that the current research on photoconductive materials is basically binary materials and cannot achieve full-band absorption. Therefore, existing infrared photoelectric sensors are usually single-point infrared photoelectric sensors, which can only detect the light intensity of infrared light within the response wavelength range and detect the radiation energy of a light source with a known radiation wavelength, but cannot identify the wavelength of an unknown light source, and are subject to certain limitations in the field of spectral detection applications.

[0005] However, when laser light sources, LED light sources, etc. are inspected during factory inspection, it is necessary to check whether the peak wavelength of the light source meets the requirements and whether the radiation energy meets the requirements. Therefore, it is very necessary to design a sensor that can identify the wavelength of an unknown light source.

[0006] In order to solve the above existing problems, people have been seeking an ideal technical solution. Summary of the Invention

[0007] The purpose of the present invention is to overcome the deficiencies of the prior art, and thus provide an array-type field-effect transistor photoelectric sensor and a method for identifying the wavelength of an unknown light source.

[0008] To achieve the above purpose, the technical solutions adopted by the present invention are as follows:

[0009] In the first aspect of the present invention, an array-type field-effect transistor photoelectric sensor is provided, which includes a field-effect transistor I, a field-effect transistor II, a field-effect transistor III, a field-effect transistor IV, and a field-effect transistor V sequentially arranged on a substrate.

[0010] The field-effect transistor I, the field-effect transistor II, the field-effect transistor III, the field-effect transistor IV, and the field-effect transistor V respectively correspond to different working wavelength ranges, forming a peak wavelength gradient from 2.7 μm to 3.9 μm.

[0011] In the second aspect of the present invention, a method for identifying the wavelength of an unknown light source is provided, which includes the following steps:

[0012] Initialization stage:

[0013] Apply a forward bias voltage U between the gate and the source of the field-effect transistor I GS1 , apply a forward bias voltage U between the gate and the source of the field-effect transistor II GS2 , apply a forward bias voltage U between the gate and the source of the field-effect transistor III GS3 , apply a forward bias voltage U between the gate and the source of the field-effect transistor IV GS4 , apply a forward bias voltage U between the gate and the source of the field-effect transistor V GS5 ;

[0014] Respectively ground the sources of the field-effect transistor I, the field-effect transistor II, the field-effect transistor III, the field-effect transistor IV, and the field-effect transistor V;

[0015] Apply a voltage U between the drain and the source of the field-effect transistor I DS1 , apply a voltage U between the drain and the source of the field-effect transistor II DS2 , apply a voltage U between the drain and the source of the field-effect transistor III DS3 , apply a voltage U between the drain and the source of the field-effect transistor IV DS4 , apply a voltage U between the drain and the source of the field-effect transistor V DS5 ;

[0016] When there is no light source in the environment to be measured, mark the drain-source current I output by each field-effect transistor in the array-type field-effect transistor photoelectric sensor as the current reference value corresponding to each field-effect transistor; DS

[0017] Calibration stage:

[0018] Use calibration light sources with known peak wavelengths and known energies to calibrate the corresponding field-effect transistors in the array-type field-effect transistor photoelectric sensor respectively, and obtain the current change reference quantity corresponding to each field-effect transistor;

[0019] Wavelength identification detection stage:

[0020] When infrared light emitted by an unknown light source with a peak wavelength of 2.7 μm to 3.9 μm is radiated on the gates of the field effect transistors I, II, III, IV and V, respectively, the gate threshold voltage U corresponding to each field effect transistor is T decline;

[0021] A forward bias voltage U is applied between the gate and source of a field effect transistor. GSi >Real-time gate threshold voltage U of the corresponding field effect tube Ti When the drain and source of the corresponding field effect tube in the array field effect tube photoelectric sensor are connected, the drain-source current I DSi ;

[0022] Calculate the drain-source current I of each field effect tube output DS The difference between the corresponding current reference value is used as the real-time change of the drain-source current corresponding to each field effect transistor;

[0023] Based on the real-time change in drain-source current corresponding to each field effect transistor, two field effect transistors are selected from the array field effect transistor photoelectric sensor as the first target field effect transistor and the second target field effect transistor, and the wavelength of infrared light emitted by an unknown light source in the test environment is determined to be between the peak wavelengths corresponding to the first target field effect transistor and the second target field effect transistor.

[0024] A third aspect of the present invention provides a readable storage medium having instructions stored thereon, which, when executed by a processor, implement the steps of the above-mentioned method for identifying the wavelength of an unknown light source.

[0025] The present invention has outstanding substantive features and significant progress compared to the prior art, specifically:

[0026] 1) The present invention proposes an array type field effect transistor. Since the field effect transistor I, the field effect transistor II, the field effect transistor III, the field effect transistor IV and the field effect transistor V correspond to different response bands, the array type field effect transistor forms a field effect transistor photoelectric sensor with a peak wavelength gradient, which can not only detect weak light intensity light signals, but also simultaneously output drain-source current I with different gradients. DS Signal, convenient for subsequent applications;

[0027] 2) The present invention also proposes a method for identifying the wavelength of an unknown light source, which is based on an array-type field effect tube photoelectric sensor and can realize the wavelength and energy detection of an unknown light source with a peak wavelength within the range of 2.7μm to 3.9μm. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 It is a schematic structural diagram of the array-type field-effect transistor photoelectric sensor of the present invention;

[0029] Figure 2 It is a schematic structural diagram of the field-effect transistor of the present invention;

[0030] Figure 3 It is a schematic circuit connection diagram of the array-type field-effect transistor photoelectric sensor of the present invention when performing unknown light source wavelength identification or gas detection;

[0031] In the figure: 1. Substrate; 2. Insulating layer; 3. Gate; 4. Drain; 5. Source. Specific embodiments

[0032] Next, through specific embodiments, the technical solutions of the present invention will be further described in detail.

[0033] Embodiment 1

[0034] Appendix Figure 1 And appendix Figure 2 shows a schematic structural diagram of an array-type field-effect transistor photoelectric sensor. The array-type field-effect transistor photoelectric sensor includes field-effect transistor I, field-effect transistor II, field-effect transistor III, field-effect transistor IV, and field-effect transistor V sequentially arranged on a substrate. The field-effect transistor I, the field-effect transistor II, the field-effect transistor III, the field-effect transistor IV, and the field-effect transistor V respectively correspond to different working wavelength ranges, forming a peak wavelength gradient from 2.7 μm to 3.9 μm.

[0035] It can be understood that the array-type field-effect transistor photoelectric sensor in this embodiment adopts a MOSFET structure. The gate of each field-effect transistor is a photosensitive material. By using the characteristic that infrared light radiation causes a decrease in the threshold voltage on the gate, the signal of weak infrared radiation is detected, thereby detecting the optical signal of weak light intensity and improving the detection rate.

[0036] Furthermore, the field-effect transistor I, the field-effect transistor II, the field-effect transistor III, the field-effect transistor IV, and the field-effect transistor V have the same structure, and each includes a substrate 1, a source (S) 5, a drain (D) 4, an insulating layer 2, and a gate (G) 3. The insulating layer 2 is arranged on the upper surface of the substrate 1, the gate (G) 3 is arranged on the upper surface of the insulating layer 2, the source (S) 5 and the drain (D) 4 are respectively arranged on both sides of the gate (G) 3 and are embedded in the substrate 1;

[0037] The gate (G) of the field-effect transistor I uses a PbS semiconductor sensitive material, and the gate (G) of the field-effect transistor II uses a PbS 0.7 Se 0.3 semiconductor sensitive material, and the gate (G) of the field-effect transistor III uses a PbS0.5 Se 0.5 a semiconductor sensitive material, and the gate (G) of the field effect transistor IV is made of PbS 0.3 Se 0.7 semiconductor sensitive material, and the gate (G) of the field effect transistor V is made of PbSe semiconductor sensitive material.

[0038] Furthermore, the peak wavelength within the operating wavelength range of the field effect transistor I is 2.7 μm, the peak wavelength within the operating wavelength range of the field effect transistor II is 3.0 μm, the peak wavelength within the operating wavelength range of the field effect transistor III is 3.3 μm, the peak wavelength within the operating wavelength range of the field effect transistor IV is 3.6 μm, and the peak wavelength within the operating wavelength range of the field effect transistor V is 3.9 μm.

[0039] Specifically, the substrate of each field effect transistor is a Si wafer, and the insulating layer of each field effect transistor is SiO 2 ; the gate is a semiconductor optoelectronic sensitive material PbS x Se 1-x ternary material, such as Figure 1 shown, gates (G) 1 to G5 are successively spot-coated with PbS, PbS 0.7 Se 0.3 、PbS 0.5 Se 0.5 、PbS 0.3 Se 0.7 、PbSe five different materials to form a peak wavelength gradient from 2.7 μm to 3.9 μm.

[0040] It can be understood that when the forward bias voltage U GS between the gate (G) and the source (S) of the field effect transistor T > the gate threshold voltage U DS , a conductive channel is formed, and the MOSFET field effect transistor enters the working state; since a voltage U DS is applied between the source (S) and the drain (D), there is a current I DS flowing between the source and the drain, and the drain-source current I DS varies with the magnitudes of U GS , and its variation law conforms to the volt-ampere characteristics of the MOSFET.

[0041] When the forward bias voltage U GS between the gate (G) and the source (S) of the field effect transistor T < the gate threshold voltage U

[0042] The array-type field effect transistor photoelectric sensor in this embodiment can work under very small current and very low voltage conditions, and its manufacturing process can also easily integrate many field effect transistors into one device. Therefore, the structure of the field effect transistor is more conducive to the large-scale application of photoelectric sensors.

[0043] Example 2

[0044] It should be noted that currently, single-point photoelectric sensors can only detect the radiation energy of light sources with known peak radiation wavelengths, but cannot identify the wavelength of unknown light sources; however, when laser light sources, LED light sources and other light sources are inspected at the factory, it is usually necessary to inspect whether the peak wavelength of the light source meets the requirements and whether the radiation energy meets the requirements. Therefore, based on Example 1, this example provides a specific implementation method for identifying the wavelength of an unknown light source, so that the array-type field effect tube photoelectric sensor can detect both its wavelength and its radiation intensity;

[0045] Specifically, the unknown light source wavelength identification method comprises the following steps:

[0046] Initialization phase:

[0047] As attached Figure 3 As shown, a forward bias voltage U is loaded between the gate and source of the field effect transistor I. GS1 , a forward bias voltage U is applied between the gate and source of the field effect transistor II. GS2 , a forward bias voltage U is applied between the gate and source of the field effect transistor III. GS3 , a forward bias voltage U is applied between the gate and source of the field effect transistor IV. GS4 , a forward bias voltage U is applied between the gate and source of the field effect transistor V GS5 ;

[0048] Grounding the sources of the field effect transistor I, the field effect transistor II, the field effect transistor III, the field effect transistor IV and the field effect transistor V respectively;

[0049] A voltage U is applied between the drain and source of the field effect transistor I. DS1 , a voltage U is applied between the drain and source of the field effect transistor II DS2 , a voltage U is applied between the drain and source of the field effect transistor III DS3 , a voltage U is applied between the drain and source of the field effect transistor IV DS4 , a voltage U is applied between the drain and source of the field effect transistor V DS5 ;

[0050] When there is no light source in the environment to be tested, the drain-source current I output by each field effect tube in the array field effect tube photoelectric sensor is DS, marked as the current reference value corresponding to each field effect tube (the current reference value is close to 0);

[0051] Calibration phase:

[0052] Using calibration light sources with known peak wavelengths and known energy, the wavelengths of corresponding field effect tubes in the array field effect tube photoelectric sensor are calibrated to obtain a current change reference value corresponding to each field effect tube;

[0053] Wavelength identification detection stage:

[0054] When infrared light emitted by an unknown light source with a peak wavelength of 2.7 μm to 3.9 μm is radiated on the gates of the field effect transistors I, II, III, IV and V, respectively, the gate threshold voltage U corresponding to each field effect transistor is T decline;

[0055] A forward bias voltage U is applied between the gate and source of a field effect transistor. GSi >Real-time gate threshold voltage U of the corresponding field effect tube Ti When the drain and source of the corresponding field effect tube in the array field effect tube photoelectric sensor are connected, the drain-source current I DSi ; Wherein, the real-time gate threshold voltage U Ti Refers to the gate threshold voltage of a field effect transistor after it drops;

[0056] Calculate the drain-source current I of each field effect tube output DS The difference between the corresponding current reference value is used as the real-time change of the drain-source current corresponding to each field effect transistor;

[0057] Based on the real-time change in drain-source current corresponding to each field effect transistor, two field effect transistors are selected from the array field effect transistor photoelectric sensor as the first target field effect transistor and the second target field effect transistor, and the wavelength of infrared light emitted by an unknown light source in the test environment is determined to be between the peak wavelengths corresponding to the first target field effect transistor and the second target field effect transistor.

[0058] It can be understood that when the infrared light emitted by the unknown light source is radiated on the gate (G) of each field effect tube, it will cause the resistance of the gate photoelectric material to decrease, resulting in the gate threshold voltage U T Reduce the gate threshold voltage U corresponding to different field effect transistors T The degree of decrease is different, and the degree of decrease is related not only to the properties of the substrate material, but also to the performance of the optoelectronic material.

[0059] Specifically, the calibration light source with known peak wavelength and known energy refers to an infrared light source with a peak wavelength of 2.7 μm to 3.9 μm and an energy of 1 mW.

[0060] The forward bias voltage U is loaded between the gate and source of each field effect tube. GS 0 to 5V. When applied, the forward bias voltage U GS The value can be obtained based on specific device testing and is related to the size of the specific device, the thickness of the material, etc.

[0061] Specifically, when two field effect transistors are selected from the array field effect transistor photoelectric sensor, the following steps are performed:

[0062] The real-time changes of drain-source current corresponding to each field effect transistor are sorted in order from large to small, and the field effect transistors corresponding to the first two real-time changes of drain-source current are used as the first target field effect transistor and the second target field effect transistor;

[0063] The first target field effect transistor and the second target field effect transistor are two field effect transistors with adjacent peak wavelengths, and the peak wavelength corresponding to the first target field effect transistor is less than the peak wavelength corresponding to the second target field effect transistor.

[0064] Further, after determining that the wavelength of infrared light emitted by the unknown light source in the test environment is between the first target peak wavelength and the second target peak wavelength, the following is further performed:

[0065] Determine a third target field effect transistor and a fourth target field effect transistor, wherein the peak wavelength corresponding to the third target field effect transistor is less than the peak wavelength corresponding to the first target field effect transistor, and the peak wavelength corresponding to the fourth target field effect transistor is greater than the peak wavelength corresponding to the second target field effect transistor;

[0066] Determine a first attenuation signal line based on the peak wavelength and the real-time change amount of the drain-source current corresponding to the first target field effect transistor, and the peak wavelength and the real-time change amount of the drain-source current corresponding to the third target field effect transistor;

[0067] Determine a second attenuation signal line based on the peak wavelength and the real-time change amount of the drain-source current corresponding to the second target field effect transistor, and the peak wavelength and the real-time change amount of the drain-source current corresponding to the fourth target field effect transistor;

[0068] Determine the intersection of the first attenuated signal line and the second attenuated signal line, and use the wavelength value corresponding to the obtained intersection as the peak wavelength γ corresponding to the unknown light source 0 .

[0069] It can be understood that the abscissa is defined as the peak wavelength, and the ordinate is defined as the real-time change in the drain-source current; based on (the peak wavelength corresponding to the first target field-effect transistor, the real-time change in the drain-source current) and (the peak wavelength corresponding to the third target field-effect transistor, the real-time change in the drain-source current), a straight line can be plotted as the first attenuation signal line;

[0070] Based on (the peak wavelength corresponding to the second target field-effect transistor, the real-time change in the drain-source current) and (the peak wavelength corresponding to the fourth target field-effect transistor, the real-time change in the drain-source current), a straight line can be plotted as the second attenuation signal line;

[0071] Since the wavelength of the infrared light emitted by the unknown light source is between the peak wavelengths corresponding to the first target field-effect transistor and the second target field-effect transistor; therefore, the slope of the first attenuation signal line > 0, the slope of the second attenuation signal line < 0, and the first attenuation signal line and the second attenuation signal line will intersect near the peak wavelength corresponding to the unknown light source;

[0072] Therefore, since the peak wavelength is in the micrometer level, and the peak wavelength gradient of the array-type field-effect transistor photoelectric sensor is 2.7 μm to 3.9 μm, the difference between the peak wavelengths corresponding to adjacent field-effect transistors is in the nanometer level; therefore, the wavelength of the unknown light source can be quickly and accurately identified with high accuracy and high timeliness by the above method.

[0073] It can be understood that at least one group of target field-effect transistor groups is selected to determine the attenuation trend corresponding to adjacent field-effect transistors under the irradiation of the same light source, and the unknown light source energy is a value derived from the attenuation trends corresponding to each field-effect transistor in the array-type field-effect transistor photoelectric sensor;

[0074] Specifically, after calculating the peak wavelength γ corresponding to the unknown light source 0 then, the following is also executed:

[0075] Two field-effect transistors with adjacent peak wavelength sizes, neither being the first target field-effect transistor nor the second target field-effect transistor, are used as the target field-effect transistor group;

[0076] For each group of target field-effect transistor groups, based on the current change reference amount and the real-time change in the drain-source current corresponding to each field-effect transistor, the attenuation multiple S corresponding to each group of target field-effect transistor groups is calculated; the attenuation multiple S = the difference between the real-time changes in the drain-source currents corresponding to the two field-effect transistors ÷ the difference between the current change reference amounts corresponding to the two field-effect transistors;

[0077] Among them, the current change reference amount refers to the difference between the drain-source current I output by each field-effect transistor and the corresponding current reference value of the field-effect transistor when a calibration light source with a known peak wavelength and known energy is used in the initialization stage DS and the corresponding current reference value of the field-effect transistor;

[0078] To improve the accuracy of the energy of an unknown light source, based on the attenuation multiple S corresponding to each group of target field-effect transistor groups, the average value of the attenuation multiple S is calculated as the target attenuation multiple Ⅰ.

[0079] Based on the target attenuation multiple Ⅰ, the energy of the unknown light source is calculated; the energy of the unknown light source = the target attenuation multiple Ⅰ × the energy of the calibrated light source, where the energy of the calibrated light source refers to the energy of the light source used during wavelength calibration, such as 1 mW.

[0080] In a specific embodiment, the steps of light source wavelength identification and energy detection are generally as follows:

[0081] (1) In the initialization stage, under the condition of no light, the drain-source currents I output by the five field-effect transistors DS signals are 0, and 0 is respectively calibrated as the current reference value of the field-effect transistor.

[0082] (2) In the calibration stage, a light source with a standard energy (2.7 μm - 3.9 μm) is used to calibrate the array-type field-effect transistor photoelectric sensor respectively.

[0083] For example, when calibrating with a light source having a peak wavelength of 3.3 μm and an energy of 1 mW, the change in the drain-source current signal of field-effect transistor Ⅲ is the largest, and the real-time change in the drain-source current is 1.0 (the same unit as the current reference value, the same hereinafter); the real-time changes in the drain-source currents of field-effect transistors Ⅱ and Ⅳ are both 0.7, and the real-time changes in the drain-source currents of field-effect transistors Ⅰ and Ⅴ are both 0.4. Based on this, a standard curve can be drawn.

[0084] (3) When testing, when an infrared light with an unknown energy and an unknown wavelength irradiates, the drain-source currents I output by the respective field-effect transistors in the array-type field-effect transistor photoelectric sensor DS signals will change to varying degrees.

[0085] Relative to the current reference value, the real-time change in the drain-source current of field-effect transistor Ⅰ is 0.25 (the same unit as the current reference value, the same hereinafter), the real-time change in the drain-source current of field-effect transistor Ⅱ is 0.4, the real-time change in the drain-source current of field-effect transistor Ⅲ is 0.45, the real-time change in the drain-source current of field-effect transistor Ⅳ is 0.3, and the real-time change in the drain-source current of field-effect transistor Ⅴ is 0.15.

[0086] It can be determined that the real-time changes in the drain-source currents of field-effect transistors Ⅱ and Ⅲ are relatively large. Therefore, the peak wavelength of the unknown light source is between 3.0 μm and 3.3 μm.

[0087] (4) With the peak wavelength as the abscissa (scale selected as 0.1 μm), and the real-time change in drain-source current as the ordinate (scale selected as 0.2, with the same unit as the current reference value);

[0088] Based on the real-time change in drain-source current and the peak wavelength corresponding to Field Effect Transistor I, and the real-time change in drain-source current and the peak wavelength corresponding to Field Effect Transistor II, a first attenuation signal line (a straight line) is obtained;

[0089] Based on the real-time change in drain-source current and the peak wavelength corresponding to Field Effect Transistor III, and the real-time change in drain-source current and the peak wavelength corresponding to Field Effect Transistor IV, a second attenuation signal line (a straight line) is obtained;

[0090] The wavelength at the intersection of the first attenuation signal line and the second attenuation signal line is 3.2 μm. Therefore, 3.2 μm is taken as the peak wavelength γ of the unknown light source. 0 ;

[0091] (5) Determine that the energy corresponding to the unknown light source is approximately 0.5 mW through the attenuation trends corresponding to adjacent field effect transistors under the irradiation of the same light source;

[0092] For example, the difference between the real-time changes in drain-source current corresponding to Field Effect Transistor I and Field Effect Transistor II is 0.15, and the difference between the current change reference amounts corresponding to Field Effect Transistor I and Field Effect Transistor II is 0.3; it can be concluded that the attenuation multiple S corresponding to this group of target field effect transistor groups is 0.5 times;

[0093] The attenuation multiple S corresponding to Field Effect Transistor III and Field Effect Transistor IV, and the attenuation multiple S corresponding to Field Effect Transistor IV and Field Effect Transistor V are also 0.5 times;

[0094] Since the energy of the calibrated light source is 1 mW, the energy of the unknown light source is calculated to be 0.5 mW.

[0095] It should be noted that since the response bands corresponding to Field Effect Transistor I, Field Effect Transistor II, Field Effect Transistor III, Field Effect Transistor IV, and Field Effect Transistor V are different, different working wavelength ranges of field effect transistors in the array-type field effect transistor photoelectric sensor are obtained. Compared with the condition without light irradiation, the output signals of the field effect transistors will increase to varying degrees after the infrared light source irradiation, and there are difference gradients between the drain-source current I output signals of different field effect transistors; in this embodiment, through the detection signal differences between different MOSFET field effect transistors, spectral detection of unknown light sources in the infrared wavelength range of 2.7 μm to 3.9 μm is realized, and thus the peak wavelength and energy of the unknown infrared light source are accurately distinguished. DS The difference gradients exist among the signals; in this embodiment, through the detection signal differences between different MOSFET field effect transistors, spectral detection of unknown light sources in the infrared wavelength range of 2.7 μm to 3.9 μm is realized, and thus the peak wavelength and energy of the unknown infrared light source are accurately distinguished.

[0096] Embodiment 3

[0097] Based on the above embodiments, this embodiment provides a specific implementation manner of a readable storage medium, on which instructions are stored, and when the instructions are executed by a processor, the steps of the unknown light source wavelength identification method in Embodiment 2 are implemented;

[0098] In the above embodiments, the descriptions of the respective embodiments have their own focuses. For parts not detailed or recorded in a certain embodiment, reference may be made to the relevant descriptions of other embodiments.

[0099] Those of ordinary skill in the art can realize that the algorithm steps of the examples described in combination with the embodiments disclosed herein can be implemented by electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are executed in a hardware or software manner depends on the specific application and design constraints of the technical solution. Professional technicians can use different methods to implement the described functions for each specific application, but such implementation should not be considered to exceed the scope of this application.

[0100] If the above algorithm steps are implemented in the form of software function units and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, to implement all or part of the processes in the above embodiment methods of this application, it can also be completed by instructing relevant hardware through a computer program. The above computer program can be stored in a computer-readable storage medium. When the computer program is executed by a processor, the steps of the above various method embodiments can be implemented. Among them, the above computer program includes computer program code, and the above computer program code can be in the form of source code, object code, executable file or some intermediate form, etc.

[0101] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and not to limit them; although the present invention has been described in detail with reference to the preferred embodiments, those of ordinary skill in the art should understand that it is still possible to modify the specific implementation manners of the present invention or perform equivalent replacements for some technical features; without departing from the spirit of the technical solutions of the present invention, they should all be covered within the scope of the technical solutions claimed by the present invention.

[0102] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and not to limit them; although the present invention has been described in detail with reference to the preferred embodiments, those of ordinary skill in the art should understand that it is still possible to modify the specific implementation manners of the present invention or perform equivalent replacements for some technical features; without departing from the spirit of the technical solutions of the present invention, they should all be covered within the scope of the technical solutions claimed by the present invention.

Claims

1. A method for identifying the wavelength of an unknown light source based on an array field effect tube photoelectric sensor, wherein the array field effect tube photoelectric sensor comprises field effect tube I, field effect tube II, field effect tube III, field effect tube IV and field effect tube V arranged in sequence on a substrate, wherein the field effect tube I, the field effect tube II, the field effect tube III, the field effect tube IV and the field effect tube V correspond to different working wavelength ranges respectively, forming a peak wavelength gradient of 2.7 μm to 3.9 μm; It is characterized in that The following steps are involved: Initialization phase: A forward bias voltage U is applied between the gate and the source of the field effect transistor Ⅰ GS1 , a forward bias voltage U is applied between the gate and the source of the field effect transistor Ⅱ GS2 , a forward bias voltage U is applied between the gate and the source of the field effect transistor Ⅲ GS3 , a forward bias voltage U is applied between the gate and the source of the field effect transistor Ⅳ GS4 , a forward bias voltage U is applied between the gate and the source of the field effect transistor Ⅴ GS5 ; Grounding the sources of the field effect transistor I, the field effect transistor II, the field effect transistor III, the field effect transistor IV and the field effect transistor V respectively; Apply a voltage U between the drain and source of the field effect transistor Ⅰ DS1 ,apply a voltage U between the drain and source of the field effect transistor Ⅱ DS2 ,apply a voltage U between the drain and source of the field effect transistor Ⅲ DS3 ,apply a voltage U between the drain and source of the field effect transistor Ⅳ DS4 ,apply a voltage U between the drain and source of the field effect transistor Ⅴ DS5 ; When there is no light source in the environment to be measured, the drain-source current I output by each field-effect transistor in the array-type field-effect transistor photoelectric sensor is DS , which is marked as the current reference value corresponding to each field-effect transistor; Calibration phase: Using calibration light sources with known peak wavelengths and known energy, the wavelengths of corresponding field effect tubes in the array field effect tube photoelectric sensor are calibrated to obtain a current change reference value corresponding to each field effect tube; Wavelength identification detection stage: When infrared light emitted by an unknown light source with a peak wavelength within 2.7 μm to 3.9 μm is respectively radiated on the gates of the field effect transistor I, the field effect transistor II, the field effect transistor III, the field effect transistor IV, and the field effect transistor V, the gate threshold voltage U T decreases; Apply a positive bias voltage U between the gate and source of a certain field-effect transistor GSi > the real-time gate threshold voltage U of the corresponding field-effect transistor Ti At this time, a drain-source current I is output between the drain and source of the corresponding field-effect transistor in the array-type field-effect transistor photoelectric sensor DSi ; Calculate the drain-source current I output by each field effect transistor respectively DS The difference from the corresponding current reference value is used as the real-time change amount of the drain-source current corresponding to each field effect transistor; Based on the real-time change in drain-source current corresponding to each field effect transistor, two field effect transistors are selected from the array field effect transistor photoelectric sensor as the first target field effect transistor and the second target field effect transistor, and the wavelength of infrared light emitted by an unknown light source in the test environment is determined to be between the peak wavelengths corresponding to the first target field effect transistor and the second target field effect transistor.

2. The method for identifying the wavelength of an unknown light source according to claim 1, It is characterized in that After determining that the wavelength of infrared light emitted by the unknown light source in the test environment is between the first target peak wavelength and the second target peak wavelength, further executing: Determine a third target field effect transistor and a fourth target field effect transistor, wherein the peak wavelength corresponding to the third target field effect transistor is less than the peak wavelength corresponding to the first target field effect transistor, and the peak wavelength corresponding to the fourth target field effect transistor is greater than the peak wavelength corresponding to the second target field effect transistor; Determine a first attenuation signal line based on the peak wavelength and the real-time change amount of the drain-source current corresponding to the first target field effect transistor, and the peak wavelength and the real-time change amount of the drain-source current corresponding to the third target field effect transistor; Determine a second attenuation signal line based on the peak wavelength and the real-time change amount of the drain-source current corresponding to the second target field effect transistor, and the peak wavelength and the real-time change amount of the drain-source current corresponding to the fourth target field effect transistor; Determine the intersection point of the first attenuation signal line and the second attenuation signal line, and use the wavelength value corresponding to the obtained intersection point as the peak wavelength γ corresponding to the unknown light source 0 .

3. The method for identifying the wavelength of an unknown light source according to claim 2, It is characterized in that After calculating the peak wavelength γ corresponding to the unknown light source 0 the following operations are further performed: Two field effect transistors with adjacent peak wavelengths and which are neither the first target field effect transistor nor the second target field effect transistor are used as a target field effect transistor group; For each group of target field effect transistors, based on the current change reference amount and the drain-source current real-time change amount corresponding to each field effect transistor, the attenuation multiple S corresponding to each group of target field effect transistors is calculated; Calculate the average value of the attenuation multiple S as the target attenuation multiple I; Based on the target attenuation multiple I, the energy of the unknown light source is calculated, and the energy of the unknown light source = the target attenuation multiple I × the energy of the calibrated light source.

4. The method for identifying the wavelength of an unknown light source according to any one of claims 1 to 3, Features: The structures of the field effect transistor I, the field effect transistor II, the field effect transistor III, the field effect transistor IV, and the field effect transistor V are the same, and each includes a substrate, a source electrode, a drain electrode, an insulating layer, and a gate electrode. The insulating layer is disposed on the upper surface of the substrate, the gate electrode is disposed on the upper surface of the insulating layer, the source electrode and the drain electrode are respectively disposed on both sides of the gate electrode and are embedded in the substrate; The gate of the field effect transistor I uses a PbS semiconductor sensitive material, and the gate of the field effect transistor II uses a PbS 0.7 Se 0.3 semiconductor sensitive material. The gate of the field effect transistor III uses a PbS 0.5 Se 0.5 semiconductor sensitive material. The gate of the field effect transistor IV uses a PbS 0.3 Se 0.7 semiconductor sensitive material. The gate of the field effect transistor V uses a PbSe semiconductor sensitive material.

5. The method for identifying the wavelength of an unknown light source according to claim 4, wherein: The peak wavelength within the operating wavelength range of the field effect transistor I is 2.7 μm, and the peak wavelength within the operating wavelength range of the field effect transistor II is 3.0 μm. The peak wavelength within the operating wavelength range of the field effect transistor III is 3.3 μm, the peak wavelength within the operating wavelength range of the field effect transistor IV is 3.6 μm, and the peak wavelength within the operating wavelength range of the field effect transistor V is 3.9 μm.

6. A readable storage medium, on which instructions are stored, wherein: When the instructions are executed by a processor, the steps of the method for identifying the wavelength of an unknown light source according to any one of claims 1 to 5 are implemented.

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