Method for preparing perovskite solar cell with hole extraction type heterostructure

Abstract

The application relates to a preparation method of a perovskite solar cell with a high-efficiency stable hole extraction type heterostructure, and the preparation method comprises the following steps: coating an interface layer solution on a hole transport layer, annealing to obtain an interface layer; coating a perovskite precursor solution on the interface layer, and annealing to obtain a perovskite active layer; wherein in the interface layer solution, the interface layer material used comprises one or more of 4-iodo-2,3,5,6-tetrafluorobenzoic acid, 4-bromo-2,3,5,6-tetrafluorobenzoic acid, 4-chloro-2,3,5,6-tetrafluorobenzoic acid, 4-fluoro-2,3,5,6-tetrafluorobenzoic acid, 4-iodo-2,3,5,6-tetrafluorobenzene phosphoric acid, 4-bromo-2,3,5,6-tetrafluorobenzene phosphoric acid, 4-chloro-2,3,5,6-tetrafluorobenzene phosphoric acid and 4-fluoro-2,3,5,6-tetrafluorobenzene phosphoric acid. Compared with the prior art, the application provides a high-efficiency stable hole extraction type heterostructure construction technology, and the perovskite solar cell still maintains more than 92% of the initial efficiency after continuous illumination for 1000 hours under AM1.5G sunlight (100 mW cm ‑2 ).

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of solar cells, and relates to a preparation method of a perovskite solar cell with a high-efficiency stable hole extraction type heterostructure. BACKGROUND

[0002] Perovskite solar cells have attracted extensive attention due to their low cost and high efficiency. A perovskite solar cell is composed of a transparent conductive substrate, a hole transport layer, a perovskite active layer, an electron transport layer, a back electrode, and interface modification layers. After ten years of research, the certified efficiency of perovskite solar cells has reached 25.7%, but the stability of perovskite solar cells still has problems, especially the stability of the interface. One of the key problems is that the hole extraction type heterostructure is not stable enough. Under light conditions, unbound iodine ions at the surface interface of the perovskite photoelectric film will capture holes to form iodine atoms, and the diffusion and combination of iodine atoms will form iodine vapor, thereby causing the formation of holes at the hole extraction type heterostructure. In addition, a negative chemical reaction occurs between the hole transport layer and the perovskite photoelectric film layer, which reduces the hole extraction ability of the hole transport layer and further causes the degradation of the heterostructure. Therefore, it is urgent to design a stable hole extraction type heterojunction to realize a high-efficiency and stable perovskite solar cell. SUMMARY

[0003] The purpose of the present application is to provide a preparation method of a perovskite solar cell with a high-efficiency stable hole extraction type heterostructure.

[0004] The purpose of the present application can be achieved by the following technical solutions.

[0005] The preparation method of the perovskite solar cell comprises the following steps: coating an interface layer solution on a hole transport layer, annealing to obtain an interface layer; and then coating a perovskite precursor solution on the interface layer, and annealing to obtain a perovskite active layer.

[0006] In the interface layer solution, the interface layer material used comprises one or more of 4-iodo-2,3,5,6-tetrafluorobenzoic acid (I-TFBA), 4-bromo-2,3,5,6-tetrafluorobenzoic acid (Br-TFBA), 4-chloro-2,3,5,6-tetrafluorobenzoic acid (Cl-TFBA), 4-fluoro-2,3,5,6-tetrafluorobenzoic acid (F-TFBA), 4-iodo-2,3,5,6-tetrafluorobenzene phosphoric acid, 4-bromo-2,3,5,6-tetrafluorobenzene phosphoric acid, 4-chloro-2,3,5,6-tetrafluorobenzene phosphoric acid, and 4-fluoro-2,3,5,6-tetrafluorobenzene phosphoric acid.

[0007] Further, the concentration of the interface layer solution is 0.1-10 mg / mL.

[0008] Further, the solvent used in the interface layer solution is one or more of isopropyl alcohol, ethanol, dimethylformamide or dimethyl sulfoxide.

[0009] Further, the coating method of the interface layer solution comprises one of spin coating, doctor blade, slot coating or inkjet printing; the coating method of the perovskite precursor solution comprises one of spin coating, doctor blade, slot coating, inkjet printing or soft overlay deposition.

[0010] Further, the preparation method comprises: sequentially stacking a hole transport layer, an interface layer, a perovskite active layer, an electron transport layer and a back electrode on a transparent conductive substrate.

[0011] Further, the preparation method of the hole transport layer comprises: coating a solution containing 0.1-60 mg / mL of hole transport layer material onto a transparent conductive substrate; the coating method comprises one of spin coating, doctor blade, slot coating or inkjet printing.

[0012] Further, the hole transport layer material comprises one or more of CuSCN, Cul, CuS, CuGaO2, MoS2, molybdenum oxide, copper phthalocyanine, copper-nickel composite oxide, nickel oxide, WO3, alumina oxide, a polymer of 3-hexylthiophene, poly-carbazole-thiophene-benzothiadiazole-thiophene, 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene (spiro-OMeTAD), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA).

[0013] The solvent used is one or more of water, ethanol, chlorobenzene or toluene.

[0014] Further, the perovskite precursor solution comprises PbI2, FAI, PbBr2, MABr, Csl, MACl in a molar ratio of (1.2-1.5):(1.0-1.4):(0.1-0.14):(0.1-0.15):(0.05-0.1):(0.1-0.5).

[0015] Further, the electron transport layer material used in the electron transport layer comprises one or more of PCBM, C60, TiO2, SnO2, ZnO, SrTiO3, BaSnO3.

[0016] Further, the back electrode material used in the back electrode comprises one or more of gold, silver, copper, carbon, fluorine-doped tin oxide, tin-doped indium oxide.

[0017] This invention constructs a series of halogenated molecules as bridges between the perovskite photovoltaic thin film layer and the hole transport layer. Through Lewis acid-base coordination between the interface layer and the hole transport layer, and halogen bonding between the interface layer and the perovskite photovoltaic thin film layer, a highly efficient and stable hole-extraction heterostructure is prepared. This highly efficient and stable hole-extraction heterostructure can significantly passivate unbonded iodine ion defects in the perovskite photovoltaic thin film layer, thereby further delaying the formation of iodine vapor and interface pores under illumination, while also suppressing negative chemical reactions between the hole transport layer and the perovskite photovoltaic thin film layer. Furthermore, the highly oriented halogen bonds are beneficial for inducing the oriented growth of perovskite crystals, thereby accelerating carrier transport. This method significantly improves the stability of perovskite solar cells under illumination conditions and further enhances the photoelectric conversion efficiency of perovskite solar cells.

[0018] Compared with the prior art, the present invention has the following characteristics:

[0019] 1) This invention provides a highly efficient and stable technique for constructing hole-extraction heterostructures, comprising: coating a designed interface layer material on the surface of a hole transport layer; the Lewis acid-base coordination between the interface layer and the hole transport layer inhibits the reaction between the hole transport layer and perovskite ammonium salt; subsequently, a perovskite photoelectric thin film is deposited on top of the interface layer; the halogen atoms in the molecules can form strong halogen bonds with iodine ions in the perovskite, thereby passivating unbonded iodine ion defects in the perovskite. Furthermore, these halogen bonds facilitate the orientation of the perovskite crystals and suppress the generation of iodine vapor under illumination, thus delaying the formation of pores. Therefore, this invention can further improve the photoelectric conversion efficiency and stability of perovskite solar cells;

[0020] 2) Based on the efficient and stable hole-extraction heterostructure construction technology provided by this invention, the pore area is 0.09 cm². 2 The perovskite solar cells can achieve a photoelectric conversion efficiency of over 22.1%.

[0021] 3) Based on the efficient and stable hole-extraction heterostructure construction technology provided by this invention, perovskite solar cells can operate under AM1.5G sunlight (100mW cm⁻¹). -2 After 1000 hours of continuous illumination, it still maintains more than 92% of its initial efficiency. Attached Figure Description

[0022] Figure 1 The performance of perovskite solar cells modified with different interface molecules I-TFBA and Br-TFBA in Example 4 changes with illumination time;

[0023] Figure 2 The performance of perovskite solar cells with different positions of interface molecule modification in Example 5 changes with illumination time. DETAILED DESCRIPTION

[0024] The present application will be described in detail below in conjunction with the accompanying drawings and specific embodiments. The embodiments are implemented on the premise of the technical solutions of the present application, and detailed implementation modes and specific operation processes are given, but the protection scope of the present application is not limited to the following embodiments.

[0025] Embodiment 1

[0026] A perovskite solar cell based on a high-efficiency stable hole extraction type heterojunction, a preparation method thereof includes the following steps:

[0027] S1: Preparation of a patterned transparent conductive substrate

[0028] S1-1: A glass substrate with a tin-doped indium oxide conductive layer was etched for 15s using zinc powder and 6M hydrochloric acid, and then ultrasonic cleaning was performed using deionized water, ethanol, acetone and isopropanol, respectively, with a cleaning time of 15min. Subsequently, dry air was used to blow dry, and ultraviolet ozone treatment was performed; the ultraviolet light wavelength was 185nm, the power was 2250W, and the irradiation time was 20min, to obtain a clean patterned tin-doped indium oxide conductive layer transparent conductive substrate;

[0029] S2: Preparation of a hole transport layer

[0030] S2-1: 15mg of nickel oxide and 1mL of deionized water were prepared into a hole transport layer solution;

[0031] S2-2: 110μL of the hole transport layer solution was spin-coated on the tin-doped indium oxide conductive layer at a speed of 3000rpm, and the spin-coating time was 30s;

[0032] S2-3: Annealing treatment was performed on a heating plate, with an annealing temperature of 120℃ and an annealing time of 30min. Subsequently, ultraviolet ozone treatment was performed, with an irradiation time of 20min, an ultraviolet light wavelength of 185nm, and a power of 2250W;

[0033] S3: Preparation of an interface layer

[0034] S3-1: 2,3,5,6-tetrafluorobenzoic acid (970 mg, 5 mmol) was dissolved in 80 mL of anhydrous tetrahydrofuran, and n-butyllithium (2.5 M solution, 5.0 mL, a total of 12.5 mmol of n-butyllithium) was added dropwise at -78°C; then, an iodine monomer solution (1.586 g, 6.25 mmol of I2) dissolved in anhydrous tetrahydrofuran was added dropwise. It was allowed to react sufficiently by warming to room temperature, and stirring was performed at room temperature for 30 minutes. After diluting the reaction mixture with a mixed solution of water and sulfuric acid (H2O:H2SO4=3:1), extraction was performed with ethylene glycol, water washing was performed three times, Na2S2O3 solution washing was performed twice, and water absorption was performed with MgSO4 to obtain I-TFBA;

[0035] S3-2: An I-TFBA solution of different concentrations was prepared with isopropyl alcohol (IPA) as the solvent; then, spin coating was performed on the nickel oxide hole transport layer at a rotation speed of 5000 rpm for 30 s;

[0036] S3-3: Annealing treatment was performed on the hot plate, the annealing temperature was 100°C, and the annealing time was 10 min;

[0037] S3-4: Then, the substrate was cleaned with isopropyl alcohol (IPA) to remove uncoordinated I-TFBA molecules to obtain a nickel oxide substrate with an I-TFBA interface layer.

[0038] S4: Preparation of a perovskite active layer:

[0039] S4-1: The nickel oxide substrate with the I-TFBA interface layer was transferred to a nitrogen-filled glove box;

[0040] S4-2: A perovskite precursor solution was prepared by mixing PbI2 (end concentration 1.41 M), FAI (end concentration 1.22 M), PbBr2 (end concentration 0.121 M), MABr (end concentration 0.11 M), CsI (end concentration 0.07 M), and MACl (end concentration 0.2 M) with 1 mL of a mixed solution of dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) (V DMF :V DMSO = 5.5:1);

[0041] S4-3: 70 μL of the perovskite solution was spin-coated on the nickel oxide hole transport layer at a rotation speed of 1000 rpm for 10 s, a rotation speed of 5000 rpm for 30 s, and then 200 μL of ethyl acetate solution (EA) was added quickly at the 30 s mark;

[0042] S4-4: Transfer to the hot plate, annealing at 100°C for 30 min to obtain a perovskite active layer;

[0043] S5: Preparation of the electron transport layer:

[0044] S5-1: In a nitrogen glove box, 20 mg of PCBM was dissolved in 1 mL of chlorobenzene (CB) to prepare an electron transport layer solution, which was spin-coated onto the perovskite active layer at a rotation speed of 1000 rpm for 30 s; then, annealing was performed at 70°C for 10 min on a hot plate;

[0045] S5-2: 140 μL of bathocuproin (BCP) saturated solution in toluene was spin-coated dropwise onto the PCBM layer at a rotation speed of 6000 rpm for 30 s, followed by annealing at 70°C for 10 min on a hot plate;

[0046] S6: Preparation of the perovskite solar cell:

[0047] S6-1: In a vacuum evaporation instrument under high vacuum state (<2 x 10 -4 Pa), a 80 nm silver electrode was evaporated on the electron transport layer at a speed of 0.1 A / s to obtain a perovskite solar cell, and the performance parameters thereof are shown in Table 1;

[0048] S6-2: The perovskite solar cell was packaged with an epoxy resin and glass using ultraviolet light in a nitrogen glove box;

[0049] Table 1 Performance parameters of perovskite solar cells with a hole area of 0.09 cm 2 under different I-TFBA doping concentrations

[0050]

[0051] wherein, J SC : short-circuit current density; V OC : open-circuit voltage; FF: fill factor; Eff.: photoelectric conversion efficiency of the perovskite solar cell. The above parameters of the perovskite solar cell were obtained by measuring the current-voltage curve (J-V) using a solar simulator of AM1.5G (100 mW cm -2 , Wacom Denso Co., Japan) and a Keithley 2400 digital source meter. The solar simulator was calibrated by a standard silicon reference cell. The voltage range for the J-V curve measurement was -0.2 V to 1.2 V. It can be seen that when the I-TFBA concentration was 0.5 mg / mL, the comprehensive effect of passivation and carrier extraction was best, and excellent charge transport and collection were achieved, and the photoelectric conversion efficiency of the corresponding perovskite solar cell was the highest.

[0052] Example 2:

[0053] ​This example is used to investigate the universality of interface molecules in the interface stability of perovskite solar cell hole transport layer and perovskite heterostructure. The specific process is compared with example 1, and the difference is only in the following steps:

[0054] S2: Preparation of hole transport layer:

[0055] S2-1: 2mg PTAA, 1mL toluene was prepared as a hole transport layer solution;

[0056] S2-2: 110μL of hole transport layer solution was spin-coated on the tin-doped indium oxide conductive layer at a speed of 5000rpm, and the spin-coating time was 30s;

[0057] S2-3: Annealing treatment was carried out on the hot plate, the annealing temperature was 100℃, and the annealing time was 10min.

[0058] In the process of step S3: interface modification of hole transport layer:

[0059] Experimental group:

[0060] S3-2: I-TFBA solution with a concentration of 0.5mg / mL was prepared with isopropanol (IPA) as the solvent, and then spin-coated onto the PTAA hole transport layer at a speed of 5000rpm, and the spin-coating time was 30s;

[0061] S3-3: Transfer to the hot plate for annealing treatment, the annealing temperature is 100℃, and the annealing time is 10min;

[0062] S3-4: Then, the substrate was cleaned with isopropanol (IPA) to remove uncoordinated I-TFBA molecules;

[0063] Control group: In the nitrogen glove box, the surface of the PTAA hole transport layer was not treated, that is, no interface layer was deposited.

[0064] The corresponding perovskite solar cells were prepared, and the rest of the preparation process was the same as example 1. The performance parameters are shown in table 2.

[0065] Table 2 Performance parameters of perovskite solar cells with aperture area of 0.09cm 2 before and after I-TFBA treatment

[0066]

[0067] Wherein, J SC : short circuit current density; V OC : open circuit voltage; FF: fill factor; Eff.: photoelectric conversion efficiency of perovskite solar cell.

[0068] Therefore, the efficient and stable hole extraction type heterostructure construction technology has universality in other hole transport layers. In addition, compared with the untreated device, the I-TFBA treated device V OC is significantly improved, which embodies that the I-TFBA as an interface modification layer has good defect passivation effect on the hole transport layer and the perovskite layer, and the high directional halogen bond is beneficial to inducing the oriented growth of the perovskite crystal, thereby accelerating the carrier transport.

[0069] Embodiment 3:

[0070] This embodiment is used to investigate the designability and optimization potential of the interface molecules in the efficient and stable hole extraction type heterostructure construction technology, and I-TFBA, Br-TFBA, Cl-TFBA and F-TFBA are used as interface modification layers, and the specific process is only different from that of embodiment 1 in that:

[0071] In step S3: interface modification process of the hole transport layer:

[0072] S3-2: isopropanol (IPA) is used as a solvent, and I-TFBA, Br-TFBA, Cl-TFBA and F-TFBA solutions with a concentration of 0.5 mg / mL are respectively prepared; then spin coating is performed on the nickel oxide hole transport layer at a speed of 5000 rpm, and the spin coating time is 30 s;

[0073] S3-3: transfer to the hot plate for annealing treatment, the annealing temperature is 100 DEG C, and the annealing time is 10 min;

[0074] S3-4: then, the substrate is cleaned with isopropanol (IPA) to remove uncoordinated I-TFBA, Br-TFBA, Cl-TFBA and F-TFBA molecules;

[0075] The corresponding perovskite solar cells are respectively prepared, and the rest of the preparation process is the same as that of embodiment 1. The performance parameters are shown in Table 3.

[0076] Table 3 Aperture area 0.09 cm 2 of perovskite solar cell performance parameters under different interface molecules

[0077]

[0078] Wherein, J SC : short circuit current density; V OC : open circuit voltage; FF: fill factor; Eff.: photoelectric conversion efficiency of perovskite solar cell.

[0079] Therefore, the method can realize the efficient and stable hole extraction type heterojunction by designing various interface molecules, and has designability and optimization potential.

[0080] Example 4:

[0081] This example is used to investigate the stability improvement effect of interface molecules I-TFBA and Br-TFBA on perovskite solar cells. The specific process is different from that of Example 1 only in that:

[0082] In step S3: interface modification process of hole transport layer:

[0083] Experimental group:

[0084] S3-2: I-TFBA and Br-TFBA solutions with a concentration of 0.5 mg / mL were prepared with isopropanol (IPA) as the solvent; then spin-coated onto the nickel oxide hole transport layer at a speed of 5000 rpm for 30 s;

[0085] S3-3: transferred to the hot plate for annealing treatment, the annealing temperature was 100°C, and the annealing time was 10 min;

[0086] S3-4: then, the substrate was cleaned with isopropanol (IPA) to remove uncoordinated I-TFBA and Br-TFBA molecules;

[0087] Control group: in the nitrogen glove box, the surface of the nickel oxide layer was not treated, i.e. no interface layer was deposited.

[0088] Corresponding perovskite solar cells (aperture area 0.09 cm 2 ) were prepared, and the rest of the preparation process was the same as Example 1. The stability changes are shown in Figure 1 .

[0089] After 1000 hours of continuous light exposure under AM1.5G sunlight (100 mW cm -2 ), the perovskite solar cells treated with I-TFBA and Br-TFBA and the untreated perovskite solar cells retained 92%, 71% and 42% of the initial efficiency, respectively; the test was carried out on a solar cell light resistance test system (Bunkoukeiki, Japan);

[0090] It can be seen that the high-efficiency stable hole extraction type heterostructure in the application can significantly improve the stability of the perovskite solar cell, and the working stability of the devices treated by I-TFBA and Br-TFBA is significantly improved compared with the comparative sample, which reflects that the new hole extraction type heterostructure can inhibit the interface defects of the hole transport layer, passivate the defects on the perovskite interface, and hinder the negative chemical reaction in the hole transport layer and the perovskite, and is beneficial to the stability of the perovskite solar cell under light conditions. Compared with Br-TFBA, the stability of the device treated by I-TFBA is better, because I-TFBA can form a stronger halogen bond with the perovskite, which can not only improve the quality of the perovskite crystal, but also passivate the interface defects to a greater extent, so that a more stable hole extraction type heterostructure is obtained.

[0091] Example 5

[0092] This example is used to investigate the relationship between the position of the interface molecule I-TFBA (between the hole transport layer and the perovskite active layer - lower interface vs. between the perovskite active layer and the electron transport layer - upper interface) and the stability of the perovskite solar cell, and the specific process is only different from that of Example 1 in that:

[0093] In step S3: interface modification process of the hole transport layer:

[0094] Experimental group:

[0095] S3-2: I-TFBA solution with a concentration of 0.5 mg / mL is prepared with isopropanol (IPA) as the solvent, and then spin-coated onto the nickel oxide hole transport layer at a speed of 5000 rpm for 30 s;

[0096] S3-3: transferred to the hot plate for annealing treatment, the annealing temperature is 100 DEG C, and the annealing time is 10 min;

[0097] S3-4: then, the substrate is cleaned with isopropanol (IPA) to remove uncoordinated I-TFBA molecules;

[0098] Control group: in the nitrogen glove box, the surface of the nickel oxide layer is not treated, that is, no interface layer is deposited between the hole transport layer and the perovskite active layer; after the deposition of the perovskite layer, 0.5 mg / mL I-TFBA solution is spin-coated on the surface at a speed of 5000 rpm for 30 s; transferred to the hot plate for annealing treatment, the annealing temperature is 100 DEG C, and the annealing time is 10 min.

[0099] The corresponding perovskite solar cells (aperture area 0.09 cm 2 , and the rest of the preparation process is the same as that of Example 1. The stability change is shown in Figure 2 .

[0100] I-TFBA modification at the lower interface of perovskite and the upper interface of perovskite, the corresponding perovskite solar cells under AM1.5G sunlight (100 mW cm -2 ) for 1000 hours, respectively, 92% and 51% of the initial efficiency is maintained; the test is carried out on a solar cell light resistance test system (Bunkoukeiki, Japan);

[0101] It can be seen that the position of the interface molecule modification in the application has different effects on the stability of the perovskite solar cell, and the interface molecule modification at the lower interface can significantly improve the stability of the perovskite solar cell, compared with the comparative sample, the device working stability of I-TFBA modification at the lower interface is significantly improved, since the lower interface is the light receiving surface, it is more easily degraded than the upper interface, and the new hole extraction type heterostructure of the lower interface can effectively inhibit the interface defects of the hole transport layer, passivate the perovskite surface interface defects and hinder the negative chemical reactions in the hole transport layer and perovskite, which cannot be achieved by the upper interface. Therefore, the interface molecule modification at the lower interface is more conducive to the stability of the perovskite solar cell under light conditions.

[0102] The above description of the embodiments is to facilitate the understanding and use of the application by those skilled in the art. Those skilled in the art can easily make various modifications to these embodiments, and apply the general principles described herein to other embodiments without creative labor. Therefore, the application is not limited to the above embodiments, and the improvements and modifications made by those skilled in the art without departing from the scope of the application should be within the scope of protection of the application.

Claims

1. A method for preparing a perovskite solar cell, characterized in that, include: An interface layer solution is coated onto the hole transport layer, and the interface layer is obtained by annealing. Then, a perovskite precursor solution is coated on the interface layer and annealed to obtain the perovskite active layer. The interface layer material used in the interface layer solution includes one or more of the following: 4-iodo-2,3,5,6-tetrafluorobenzoic acid, 4-bromo-2,3,5,6-tetrafluorobenzoic acid, 4-chloro-2,3,5,6-tetrafluorobenzoic acid, 4-fluoro-2,3,5,6-tetrafluorobenzoic acid, 4-iodo-2,3,5,6-tetrafluorophenylphosphonic acid, 4-bromo-2,3,5,6-tetrafluorophenylphosphonic acid, 4-chloro-2,3,5,6-tetrafluorophenylphosphonic acid, and 4-fluoro-2,3,5,6-tetrafluorophenylphosphonic acid.

2. The method for preparing a perovskite solar cell according to claim 1, characterized in that, The concentration of the interface layer solution is 0.1-10 mg / mL.

3. The method for preparing a perovskite solar cell according to claim 1, characterized in that, The solvent used in the interface layer solution is one or more of isopropanol, ethanol, dimethylformamide, or dimethyl sulfoxide.

4. The method for preparing a perovskite solar cell according to claim 1, characterized in that, The coating method for the interface layer solution includes one of spin coating, doctor blade coating, slot coating, or inkjet printing; the coating method for the perovskite precursor solution includes one of spin coating, doctor blade coating, slot coating, inkjet printing, or soft overlay deposition.

5. The method for preparing a perovskite solar cell according to claim 1, characterized in that, The method includes: sequentially stacking a hole transport layer, an interface layer, a perovskite active layer, an electron transport layer, and a back electrode on a transparent conductive substrate.

6. The method for preparing a perovskite solar cell according to claim 5, characterized in that, The method for preparing the hole transport layer includes: coating a solution containing hole transport layer material onto a transparent conductive substrate; the coating method includes one of spin coating, blade coating, slot coating, or inkjet printing.

7. The method for preparing a perovskite solar cell according to claim 6, characterized in that, The hole transport layer material includes one or more of the following: CuSCN, CuI, CuS, CuGaO2, MoS2, molybdenum oxide, copper phthalocyanine, copper-nickel composite oxide, nickel oxide, WO3, vanadium oxide, polymer of 3-hexylthiophene, polycarbazole-thiophene-benzothiadiazole-thiophene, 2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene, and poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine]. The solvent used is one or more of water, ethanol, chlorobenzene or toluene.

8. The method for preparing a perovskite solar cell according to claim 5, characterized in that, The perovskite precursor solution comprises PbI2, FAI, PbBr2, MABr, CsI, and MACl in a molar ratio of (1.2-1.5):(1.0-1.4):(0.1-0.14):(0.1-0.15):(0.05-0.1):(0.1-0.5).

9. The method for preparing a perovskite solar cell according to claim 5, characterized in that, The electron transport layer material used in the electron transport layer includes one or more of PCBM, C60, TiO2, SnO2, ZnO, SrTiO3, and BaSnO3.

10. The method for preparing a perovskite solar cell according to claim 5, characterized in that, The back electrode material used includes one or more of gold, silver, copper, carbon, fluorine-doped tin oxide, and tin-doped indium oxide.

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