Method and apparatus for removing particles or photoresist from a substrate

Abstract

A method and apparatus for removing particles or photoresist from a substrate is provided. In one embodiment, a method includes the steps of: transporting one or more substrates into a DIO3 solution contained in a DIO3 tank; after the one or more substrates are processed in the DIO3 tank, removing the one or more substrates from the DIO3 tank and transporting the one or more substrates into an SPM solution contained in an SPM tank; after the one or more substrates are processed in the SPM tank, removing the one or more substrates from the SPM tank and rinsing the one or more substrates; and transporting the one or more substrates into one or more single substrate cleaning chambers to perform a single substrate cleaning and drying process. The present invention combines DIO3 and SPM in one cleaning process to remove particles or photoresist, especially photoresist treated by medium or high dose ion implantation.

Description

Technical Field

[0001] This invention relates to the field of semiconductor wet cleaning, and more particularly to a method and apparatus for removing particles or photoresist from semiconductor substrates. Background Technology

[0002] Traditionally, organic photoresist removal processes have been developed using a combination of dry and wet methods. However, dry processes based on active plasma ashing have encountered problems such as plasma-induced damage, photoresist cracking, incomplete photoresist removal, and byproduct redeposition. Therefore, subsequent wet stripping / cleaning is necessary. To avoid the problems caused by plasma, wet stripping processes based on organic solvents and corrosive acidic chemicals, such as sulfuric acid-hydrogen peroxide mixtures (SPM), have been developed. Today, SPM is widely used in photoresist stripping and post-removal cleaning processes.

[0003] For decades, SPM wet desizing processes were typically performed in wet scrubbing tanks due to their high throughput and low operating costs. However, SPM scrubbing alone is no longer sufficient to achieve the cleaning performance required for advanced manufacturing nodes, for reasons including (1) the particle removal efficiency of scrubbing tanks decreases significantly when particle size is reduced to 45 nm and below; and (2) the SPM bath's 145°C temperature limit makes it unable to remove particles with high doses (>1E17 ions / cm³). 2 Ion-implanted photoresist. Due to its higher SPM temperature (180°C), monolithic wet photoresist stripping appears to be an alternative for next-generation IC manufacturing nodes, which require the removal of particles smaller than 45nm and the cleaning of photoresist treated with high-dose ion implantation. However, monolithic SPM processes require heating the SPM mixture to high temperatures, but only a portion of the heated SPM contacts the substrate surface; most of the SPM is detached from the substrate. This detached SPM cannot be reused due to chemical energy loss. This process results in significant sulfuric acid consumption, and worse, waste disposal is expensive and environmentally harmful.

[0004] To reduce the environmental impact of large-scale SPM consumption, researchers have experimented with using ozone chemicals to remove photoresist as an alternative to the SPM wet stripping process. However, its cleaning efficiency, especially when cleaned with a medium dose (1E15 ions / cm³), remains low. 2 ) and high doses (>1E17 ions / cm) 2 The cleaning efficiency of photoresist treated by ion implantation is lower than that of the high-temperature (>185℃) single-substrate SPM process.

[0005] From the perspective of removal efficiency and environmental protection, an integrated cleaning system and process method combining a traditional tank-type SPM cleaning module and a single-substrate cleaning module into a single wet cleaning system was disclosed in PCT application document filed on June 7, 2018, with application number PCT / CN2018 / 090227. This system overcomes the problems of traditional separate tank-type and single-substrate wet cleaning systems, employing a two-step method to optimize the advantages of both tank-type wet cleaning and single-substrate cleaning, achieving cleaning efficiency comparable to single-substrate SPM cleaning. Simultaneously, the SPM can be recycled, significantly reducing sulfuric acid consumption. However, for photoresist treated with high-dose ion implantation, the temperature of the SPM in the tank during the wet stripping process is critical. However, excessively high temperatures can cause rapid decomposition or consumption of hydrogen peroxide; therefore, the SPM used in this system can only be heated to 150°C. Clearly, for photoresist treated with high-energy, high-dose ion implantation, an SPM at 150°C cannot remove the hard shell formed during ion implantation. Summary of the Invention

[0006] This invention discloses a method and apparatus for efficiently removing microparticles and photoresist and residues treated with high-energy-high-dose ion implantation while significantly reducing the consumption of SPM chemicals.

[0007] More specifically, this invention discloses a wet photoresist removal method and apparatus for substrate photoresist that combines DIO3 and SPM.

[0008] According to an embodiment of the present invention, a method for removing particles or photoresist from a substrate includes the following steps: sequentially processing one or more substrates in an SPM tank and a DI water rinsing tank in a tank module, then keeping the one or more substrates in a wet state and transferring the one or more substrates to one or more single-board cleaning chambers in a subsequent single-board cleaning module for single-board DI3 cleaning to complete the removal of residues and final cleaning.

[0009] According to another embodiment of the present invention, a method for removing particles or photoresist from a substrate includes the following steps: sequentially processing one or more substrates in a DI3 tank, an SPM tank, and a DI water rinsing tank in a trough module; then keeping the one or more substrates in a wet state and transferring the one or more substrates to one or more single-substrate cleaning chambers in a subsequent single-substrate cleaning module for single-substrate cleaning to complete the removal of residues and final cleaning.

[0010] According to another embodiment of the present invention, a method for removing particles or photoresist from a substrate includes the following steps: sequentially processing one or more substrates in an HF formulation solution tank, a DIO3 tank, an SPM tank, and a DI water rinsing tank in a tank module; then keeping the one or more substrates in a wet state and transferring the one or more substrates to one or more single-substrate cleaning chambers in a subsequent single-substrate cleaning module for single-substrate cleaning to complete the removal of residues and final cleaning.

[0011] According to another embodiment of the present invention, a method for removing particles or photoresist from a substrate includes the following steps: cleaning one or more substrates with DI3 in one or more single-board cleaning chambers in a single-board cleaning module; then processing the one or more substrates sequentially in an SPM tank and a DI water rinsing tank in a tank module; then keeping the one or more substrates in a wet state and transferring the one or more substrates to one or more single-board cleaning chambers in the single-board cleaning module for single-board cleaning to complete the removal of residues and final cleaning. Attached Figure Description

[0012] Figure 1 The graph shows a comparison of cleaning performance between standalone tank-type SPM cleaning plus standalone single-piece cleaning and integrated tank-type single-piece cleaning.

[0013] Figure 2 The invention illustrates a slotted DIO3-SPM bonding process and a subsequent monolithic substrate cleaning process in an integrated menu program according to an alternative embodiment of the invention.

[0014] Figure 3 The invention illustrates a slotted DIO3-SPM bonding process and a subsequent monolithic substrate cleaning process in an integrated menu program according to another alternative embodiment of the invention.

[0015] Figure 4 The invention illustrates a single-wafer substrate cleaning process based on SPM process and subsequent DIO3 process in an integrated menu program according to an alternative embodiment of the invention.

[0016] Figure 5 This demonstrates an integrated menu program according to yet another alternative embodiment of the invention, featuring a tank-type monolithic substrate cleaning process based on SPM technology and subsequent DIO3 technology.

[0017] Figure 6 An integrated menu program according to an alternative embodiment of the present invention is shown, in which a monolithic substrate is cleaned using a DIO3 cleaning process, a tank cleaning process is cleaned using an SPM process, and a subsequent monolithic substrate cleaning process is performed.

[0018] Figure 7An integrated menu program according to another alternative embodiment of the present invention is shown, in which a monolithic substrate is cleaned using a DIO3 cleaning process, a tank cleaning process is cleaned using an SPM process, and a subsequent monolithic substrate cleaning process is performed.

[0019] Figure 8 A top view of an apparatus for removing particles or photoresist from a substrate according to an alternative embodiment of the present invention is shown.

[0020] Figure 9 Showing Figure 8 A perspective view of the slotted module of the device shown.

[0021] Figure 10 A top view of an apparatus for removing particles or photoresist from a substrate according to another alternative embodiment of the present invention is shown;

[0022] Figure 11 Showing Figure 10 A perspective view of the slotted module of the device shown.

[0023] Figure 12A A perspective view of a DIO3 slot according to an alternative embodiment of the present invention is shown;

[0024] Figure 12B A perspective view showing the DIO3 slot with the lid open;

[0025] Figure 12C Showing Figure 12B The cross-sectional view of the DIO3 slot shown. Detailed Implementation

[0026] The challenges encountered in the SPM cleaning process are: sticky SPM is difficult to remove, and hygroscopic sulfur residue adheres to the substrate surface and absorbs moisture, causing particulate defects that are difficult to remove after drying. Therefore, after the tank SPM process, the substrate must be transferred to a single-piece cleaning chamber while still wet to prevent watermark defects from forming on the substrate surface after drying or from absorbing ions and particulate contaminants from the external environment.

[0027] like Figure 1 As shown, the present invention designed a comparative test to verify the different cleaning effects between a separate tank-type SPM cleaning process plus a separate single-piece cleaning process and a tank-type-single-piece integrated cleaning process.

[0028] Test 1: Tank-type SPM cleaning plus separate single-piece cleaning

[0029] a) Process 1: Tank process: SPM + QDR (Quick Drain Washing) + Drying

[0030] More specifically, the tank process is performed in a tank-type equipment. The tank process includes the following steps: treating at least one wafer with SPM, rinsing the wafer with QDR, and finally drying the wafer.

[0031] b) Process 2: The wafer remains in the FOUP for 3 hours; and

[0032] c) Process 3: Single-piece process: SC1+N2 atomization spray SC1+N2 drying.

[0033] More specifically, the monolithic process is performed in a monolithic wafer cleaning system. The monolithic process includes the following steps: processing the wafer with SC1, using a gas-liquid atomizing nozzle to atomize SC1 into small droplets, which are then accelerated by pressurized nitrogen gas (N2 atomization spraying of SC1) to process the wafer, cleaning the wafer with DIW, and finally drying the wafer with N2.

[0034] Test 2: Tank-type single-piece integrated cleaning

[0035] Tank-type integrated cleaning process in single-piece cleaning: SPM+QDR, and

[0036] Single-piece process in trough-type single-piece integrated cleaning: SC1+N2 atomization spray SC1+N2 drying.

[0037] More specifically, the tank-type process and the single-wafer process are completed in a tank-single-wafer integrated cleaning system. The tank-single-wafer integrated cleaning process includes the following steps: in the tank module of the tank-single-wafer integrated cleaning system, at least one wafer is treated with SPM, then the wafer is rinsed with QDR, and then the wafer is transferred to the single-wafer cleaning module of the tank-single-wafer integrated cleaning system to complete the single-wafer process. The single-wafer process further includes: treating the wafer with SC1, using a gas-liquid atomizing nozzle to atomize SC1 to generate small droplets and accelerate them with pressurized nitrogen (N2 atomization spray SC1) to treat the wafer, cleaning the wafer with DIW, and finally drying the wafer with N2.

[0038] Test 1 showed that after a separate tank-type SPM cleaning, the 40nm particle count increased by 297–331. Subsequently, after placing the wafer in a FOUP for 3 hours, and then processing it again in a separate single-wafer cleaning unit, the 40nm particle count decreased to 117–130. Similarly… Figure 1 As shown in Test 2 of the tank-monolithically integrated cleaning, the increase in 40nm particles decreased to -1 to -9. Figure 1 This indicates that the integrated tank-wafer cleaning process significantly outperforms the combination of tank SPM cleaning and single-wafer cleaning. The key to achieving better defect removal performance lies in maintaining the wafer surface in a moist state after the tank SPM cleaning process and before the single-wafer cleaning process. This is because once the wafer dries, it becomes difficult to remove defects even using a single-wafer cleaning process.

[0039] During the SPM cleaning process, controlling and maintaining a certain liquid film thickness on the wafer surface during the period between the tank-type SPM cleaning process and the single-wafer cleaning process is crucial. This prevents watermark defects from forming on the wafer surface after drying or the adsorption of ions and particulate contaminants from the external environment. However, it is worth noting that in practical applications, even with a tank-to-single-wafer integrated cleaning system, it is difficult to achieve a perfect wafer wetting state. Therefore, this invention discloses a cleaning process combining DIO3 and SPM to eliminate the influence on the wafer during the transfer from the tank module to the single-wafer cleaning module. Furthermore, after the SPM process, sulfur-containing byproduct residues and particulate matter adhering to the wafer surface are more difficult to remove by SPM cleaning alone.

[0040] To verify the enhanced SPM cleaning performance of DIO3, 12-inch bare silicon wafers were tested in a tank-monocell integrated cleaning system. Particle count was measured using a KLA-Tencor Surfscan SP5 with a 19nm measurement menu. The test parameters are shown in Table 1 below:

[0041] Test 1: Tank-type integrated cleaning equipment with single-piece process: SPM + thermal QDR, plus single-piece process in the tank-type integrated cleaning equipment with single-piece process: SC1 + N2 atomized spray SC1 + N2 drying.

[0042] Test 2: Tank-type integrated cleaning equipment with single-piece process: SPM + thermal QDR, plus single-piece process in the tank-type integrated cleaning equipment: O3 + SC1 + N2 atomized spray SC1 + N2 drying.

[0043] Test 3: Tank-type integrated cleaning equipment with single-piece process: SPM + thermal QDR, plus single-piece process in the tank-type integrated cleaning equipment: DHF + O3 + SC1 + N2 atomized spray SC1 + N2 drying.

[0044] Table 1: DIO3-enhanced SPM cleaning test in a tank-type monolithic integrated cleaning system

[0045]

[0046] Tests show that combining tank SPM and thermal QDR cleaning with single-wafer cleaning in a single menu program results in a slight increase in particulate matter after a single-wafer cleaning process using SC1 and N2 atomized spray SC1. A single-wafer cleaning process with O3-SC1-N2 atomized spray SC1 enhances particulate removal. A single-wafer cleaning process with DHF-O3-SC1-N2 atomized spray SC1 exhibits the best particulate removal efficiency. A cleaning process combining DIO3 and SPM shows positive cleaning results. Here, HF removes particles adhering to the wafer surface, and DIO3, after HF cleaning, further removes sulfur-containing byproducts and trims the wafer surface.

[0047] For those irradiated or subjected to high doses (greater than 1E17 ion / cm³) 2 Photoresists treated with high-energy (>10 keV) ion implantation break down the carbon atoms (CH) within the photoresist, cross-linking to form C=C double bonds or graphite structures. These graphite structures form a hard shell on the photoresist surface, which is difficult to remove unless removed using SPM at very high temperatures (>180°C) in a single-wafer cleaning system. However, in wet-cell processes, the SPM temperature in the tank can only be heated to 150°C or lower due to the rapid decomposition of H2O2. Therefore, it is crucial to remove the hard shell formed during ion implantation.

[0048] O3 is a strong oxidizing agent. The DIO3 process directly oxidizes the C=C double bond, during which the photoresist thins. Taking the ozone decomposition mechanism of olefins as an example, it involves ozone attacking the C=C double bond and forming a highly unstable ozonide intermediate. Due to this unstable nature, the ozonide continues to react and decompose, forming carbonyl molecules and carbonyl oxide molecules. The carbonyl molecules and carbonyl oxide molecules formed in the first step rearrange and recombine to produce a more stable ozone intermediate. This ozone intermediate can be subjected to either oxidation or reduction. Oxidation produces carboxylic acids, while reduction produces aldehydes or ketones.

[0049] After the hard shell is treated with DIO3, the remaining byproducts will be removed by SPM at a temperature below 150°C.

[0050] Therefore, in order to remove particles or photoresist, especially photoresist that has been treated with medium or high dose ion implantation, this invention discloses a variety of methods that combine DIO3 and SPM in a single cleaning process.

[0051] According to one embodiment of the present invention, a method for removing particles or photoresist from a substrate includes combining a tank-type DIO3-SPM process with a subsequent single-wafer cleaning process in an integrated menu program, the method comprising the following steps:

[0052] One or more substrates are transferred to a DIO3 solution contained in a DIO3 tank;

[0053] After one or more substrates are processed in the DIO3 tank, they are removed from the DIO3 tank and transferred to the SPM solution contained in the SPM tank.

[0054] After one or more substrates are processed in the SPM bath, they are removed from the SPM bath and rinsed; and

[0055] The substrate or multiple substrates are transferred to one or more single-substrate cleaning chambers for single-substrate cleaning and drying.

[0056] More specifically, refer to Figure 2 As shown, the combined tank-type DIO3-SPM process is completed in the tank module of a tank-type monolithic integrated cleaning equipment. The combined tank-type DIO3-SPM process includes the following steps:

[0057] One or more substrates are transferred to a DIO3 solution contained in a DIO3 tank to perform a DIO3 oxidation process, wherein DIO3 is used for photoresist pretreatment, including oxidation of C=C double bonds and softening of the photoresist hard shell, which will help the subsequent photoresist removal process.

[0058] After one or more substrates are processed in the DIO3 bath, they are removed from the DIO3 bath and transferred to an SPM solution contained in an SPM bath for SPM resist removal. SPM removes the softened photoresist hard shell and most of the photoresist through a vigorous chemical reaction.

[0059] After one or more substrates are processed in the SPM tank, they are removed from the SPM tank and transferred to the DIW tank for rinsing.

[0060] In the SPM cleaning process, the sulfuric acid mixture acts as an aggressive photoresist remover. Two types of photoresist removal mechanisms are widely accepted. The first is a dehydration mechanism: the first reaction involves sulfuric acid inducing organic carbonization and dehydration, through which the photoresist is first etched and then floats off the substrate. The second is an oxidation mechanism: a mixture of sulfuric acid and hydrogen peroxide forms carboxylic acid (H2SO5), which acts as a powerful oxidant, oxidizing the carbonized photoresist into CO and CO2.

[0061] The reaction in the SPM cleaning process is as follows:

[0062] H2SO4+H2O2→HO-(SO2)-O-OH+H2O

[0063] HO-(SO2)-O-OH+-(CH2)n→CO2+H2O

[0064] The SPM temperature in the SPM bath is crucial for removing photoresist that has undergone high-dose ion implantation. However, higher temperatures cause rapid decomposition or consumption of H2O2. Therefore, the SPM temperature used in the tank module can only be heated to 150°C. Clearly, for high-energy, high-dose implanted photoresist, an SPM temperature of 150°C is insufficient to remove the hardened photoresist shell formed during ion implantation.

[0065] Therefore, this invention discloses a method of adding DIO3 (ozone water) before the SPM (<150°C) process. O3 is a very strong oxidant that can directly oxidize C=C double bonds, thus softening the photoresist hard shell formed during high-energy-high-dose ion implantation. After the photoresist hard shell is softened, the underlying photoresist can be removed by SPM at a temperature below 150°C.

[0066] In one embodiment, the SPM solution is a mixture of H2SO4 and H2O2, with a mixing ratio of H2SO4 to H2O2 of 3:1 to 50:1, and the temperature of the mixture is 80°C to 150°C.

[0067] In one embodiment, the rinsing process in the DIW tank includes QDR (Quick Dump Drain) and overflow rinsing.

[0068] In one embodiment, the ozone concentration of the DIO3 solution in the DIO3 tank is 30ppm to 120ppm.

[0069] In one embodiment, the flow rate of the DIO3 solution supplied to the DIO3 tank is 10 LPM to 30 LPM.

[0070] In one embodiment, the liquid in the DIO3 tank is DIW before the one or more substrates are transferred to the DIO3 tank. The DIO3 oxidation process further includes the following steps:

[0071] Step 1: Open the lid of the DIO3 tank, transfer one or more substrates into the DIW inside the DIO3 tank, and close the lid of the DIO3 tank. To prevent ozone gas leakage, the liquid in the DIO3 tank is DIW before the one or more substrates are transferred into the DIO3 tank.

[0072] Step 2: Overflow ozone water from the bottom of the DIO3 tank to replace the DIW in the DIO3 tank;

[0073] Step 3: After the DIO3 tank is filled with ozone water, maintain the ozone water overflow for a calculated time. In one embodiment, this time is 5 to 15 minutes, preferably 10 minutes.

[0074] Step 4: Discharge the ozone water using the QDR method;

[0075] Step 5: Fill the DIO3 slot with pure DIW;

[0076] Step 6: Open the cover of the DIO3 slot and remove one or more substrates from the DIO3 slot.

[0077] In step 3, considering the need to compensate for ozone half-life loss and maintain a constant ozone concentration, the DIO3 supply flow rate must be high enough to refill the DIO3 tank and ensure that the ozone concentration does not drop too much during the process. It is well known that ozone water decays rapidly; at 25°C and a pH of 7.0, the half-life of ozone water is typically about 15 minutes. Therefore, compensating for ozone half-life loss and maintaining a constant ozone concentration is crucial. To ensure its strong oxidizing properties, the decrease in DIO3 concentration during the process needs to be controlled to less than D = 10 ppm, and the process should fully consider the ozone decomposition rate, the fresh ozone water replenishment flow rate, and the optimal DIO3 process time.

[0078] Assuming t is the half-life of DIO3, C is the target concentration of DIO3, and V is the volume of the DIO3 tank, the average ozone decomposition rate can be estimated as follows: (The instantaneous ozone decomposition rate varies with concentration; the higher the concentration, the greater the decomposition rate, and the lower the concentration, the smaller the decomposition rate.) The fresh ozone water replenishment flow rate is r = V / (D / d). The DIO3 process duration is 5–15 min, preferably 10 min.

[0079] In one embodiment, the ozone concentration of the DIO3 solution in the DIO3 tank is 90 ppm, the half-life of DIO3 is 15 minutes, and the volume of the DIO3 tank is 50 L. Therefore, the average ozone decomposition rate d = 0.5 * 90 / 15 = 3 ppm / min, and the fresh ozone water replenishment flow rate r = 50 / (10 / 3) = 15 LPM. Considering that the average ozone decomposition rate is used in the calculation, it is best to use twice r, i.e., 30 LPM, in practical applications.

[0080] In this invention, the DIO3 tank combines ozone water and pure DIW in one tank, and the DIO3 process and DIW rinsing process can be completed in one tank, which solves the environmental problem caused by ozone escaping from the DIO3 solution. Ozone has a pungent smell and is a toxic gas that may harm human health.

[0081] After one or more substrates have completed the rinsing process in the DIW tank, and before being transferred to one or more single-wafer cleaning chambers in the single-wafer cleaning module of the tank-type single-wafer integrated cleaning equipment, the one or more substrates are kept moist. More specifically, the one or more substrates are transferred to a moistening buffer to keep the substrates moist.

[0082] Please continue to refer to Figure 2 In one embodiment of the present invention, the single-substrate cleaning and drying process is completed in the single-substrate cleaning chamber of the single-substrate cleaning module in a tank-type single-substrate integrated cleaning device. The single-substrate cleaning and drying process in a single-substrate cleaning chamber includes the following steps:

[0083] The HF formulation solution is sprayed onto the substrate surface to perform a surface etching process;

[0084] DIO3 is sprayed onto the substrate surface to perform the DIO3 oxidation process;

[0085] SC1 is sprayed onto the substrate surface to perform a particle removal process;

[0086] DIW is sprayed onto the substrate surface to perform a DIW cleaning process; and

[0087] Dry the substrate.

[0088] Optionally, after spraying SC1 onto the substrate surface to perform a particle removal process, the single-substrate cleaning and drying process may further include spraying SC2 onto the substrate surface to perform a metal removal process.

[0089] In another embodiment of the present invention, the cleaning and drying process of a single substrate in a single-wafer cleaning chamber includes the following steps:

[0090] DIO3 is sprayed onto the substrate surface to perform the DIO3 oxidation process;

[0091] SC1 is sprayed onto the substrate surface to perform a particle removal process;

[0092] DIW is sprayed onto the substrate surface to perform a DIW cleaning process; and

[0093] Dry the substrate.

[0094] Optionally, after spraying SC1 onto the substrate surface to perform a particle removal process, the single-substrate cleaning and drying process may further include spraying SC2 onto the substrate surface to perform a metal removal process.

[0095] In yet another embodiment of the present invention, the cleaning and drying process of a single substrate in a single-wafer cleaning chamber includes the following steps:

[0096] The HF formulation solution is sprayed onto the substrate surface to perform a surface etching process;

[0097] DIO3 is sprayed onto the substrate surface to perform the DIO3 oxidation process;

[0098] DIW is sprayed onto the substrate surface to perform a DIW cleaning process; and

[0099] Dry the substrate.

[0100] Optionally, after the DIO3 oxidation process, the monolithic substrate cleaning and drying process may further include spraying SC2 on the substrate surface to perform a metal removal process.

[0101] In yet another embodiment of the present invention, the cleaning and drying process of a single substrate in a single-wafer cleaning chamber includes the following steps:

[0102] SC1 is sprayed onto the substrate surface to perform a particle removal process;

[0103] DIW is sprayed onto the substrate surface to perform a DIW cleaning process; and

[0104] Dry the substrate.

[0105] Optionally, after spraying SC1 onto the substrate surface to perform a particle removal process, the single-substrate cleaning and drying process may further include spraying SC2 onto the substrate surface to perform a metal removal process.

[0106] Reference Figure 3 According to another embodiment of the present invention, a method for removing particles or photoresist from a substrate includes a combined tank-type DIO3-SPM process and a subsequent single-wafer cleaning process integrated into a menu program. Figure 2 The difference lies in the method revealed in the text. Figure 3 The method further includes: before transferring one or more substrates to the DIO3 bath, transferring the one or more substrates to an HF formulation solution contained in an HF formulation solution bath to perform an HF formulation solution immersion process.

[0107] In one embodiment, the HF formulation solution is a mixture of HF and DIW, with a mixing ratio of HF to DIW of 100:1 to 1000:1.

[0108] In another embodiment, the HF formulation solution is a BOE mixture. The HF in the BOE mixture has a weight percentage of 0.05% to 10%, and the NH4F in the BOE mixture has a weight percentage of 10% to 40%.

[0109] According to one embodiment of the present invention, a method for removing particles or photoresist from a substrate includes a tank-based SPM process integrated into a menu program and a subsequent DIO3-based single-wafer cleaning process. The method specifically includes the following steps:

[0110] One or more substrates are transferred to the SPM solution in the SPM tank;

[0111] After one or more substrates are processed in the SPM bath, they are removed from the SPM bath and rinsed; and

[0112] The one or more substrates are transferred to one or more single-substrate cleaning chambers to perform a single-substrate cleaning and drying process, wherein the single-substrate cleaning and drying process includes at least one DIO3 oxidation process.

[0113] The purpose of using DIO3 is to remove residual sulfur byproducts from the SPM process and photoresist residues that were not removed by the SPM process in the tank module. The ozone concentration in DIO3 is 30 ppm to 120 ppm, preferably 80 ppm.

[0114] More specifically, refer to Figure 4 The SPM-based process in the tank is completed within the tank module of the tank-type monolithic integrated cleaning equipment. The SPM-based process in the tank includes the following steps:

[0115] One or more substrates are transferred to an SPM solution within an SPM tank to perform an SPM stripping process, where SPM is used in a tank module to remove the photoresist hard shell and most of the photoresist through a strong chemical reaction generated by concentrated sulfuric acid; and

[0116] After one or more substrates are processed in the SPM tank, they are removed from the SPM tank and transferred to the DIW tank to complete the rinsing process.

[0117] In one embodiment, the SPM solution is a mixture of H2SO4 and H2O2, with a mixing ratio of H2SO4 to H2O2 of 3:1 to 50:1, and the temperature of the mixture is 80°C to 150°C.

[0118] In one embodiment, the rinsing process in the DIW tank includes QDR (Quick Dump Drain) and overflow rinsing.

[0119] After one or more substrates have completed the rinsing process in the DIW tank, and before being transferred to one or more single-wafer cleaning chambers in the single-wafer cleaning module of the tank-type single-wafer integrated cleaning equipment, the one or more substrates are kept moist. More specifically, the one or more substrates are transferred to a moistening buffer to keep the substrates moist.

[0120] Please continue to refer to Figure 4 In one embodiment of the present invention, the DIO3-based monolithic substrate cleaning and drying process is completed in a monolithic cleaning chamber within a monolithic cleaning module of a tank-type monolithic integrated cleaning device. The DIO3-based monolithic substrate cleaning and drying process in a monolithic cleaning chamber includes the following steps:

[0121] The HF formulation solution is sprayed onto the substrate surface to perform a surface etching process;

[0122] DIO3 is sprayed onto the substrate surface to perform the DIO3 oxidation process;

[0123] SC1 is sprayed onto the substrate surface to perform a particle removal process;

[0124] DIW is sprayed onto the substrate surface to perform a DIW cleaning process; and

[0125] Dry the substrate.

[0126] Optionally, after spraying SC1 onto the substrate surface to perform a particle removal process, the single-substrate cleaning and drying process may further include spraying SC2 onto the substrate surface to perform a metal removal process.

[0127] In another embodiment of the present invention, the DIO3-based monolithic substrate cleaning and drying process is completed in a monolithic cleaning chamber within a monolithic cleaning module of a tank-type monolithic integrated cleaning device. The DIO3-based monolithic substrate cleaning and drying process in a monolithic cleaning chamber includes the following steps:

[0128] DIO3 is sprayed onto the substrate surface to perform the DIO3 oxidation process;

[0129] SC1 is sprayed onto the substrate surface to perform a particle removal process;

[0130] DIW is sprayed onto the substrate surface to perform a DIW cleaning process; and

[0131] Dry the substrate.

[0132] Optionally, after spraying SC1 onto the substrate surface to perform a particle removal process, the single-substrate cleaning and drying process may further include spraying SC2 onto the substrate surface to perform a metal removal process.

[0133] In another embodiment of the present invention, the DIO3-based monolithic substrate cleaning and drying process is completed in a monolithic cleaning chamber within a monolithic cleaning module of a tank-type monolithic integrated cleaning device. The DIO3-based monolithic substrate cleaning and drying process in a monolithic cleaning chamber includes the following steps:

[0134] The HF formulation solution is sprayed onto the substrate surface to perform a surface etching process;

[0135] DIO3 is sprayed onto the substrate surface to perform the DIO3 oxidation process;

[0136] DIW is sprayed onto the substrate surface to perform a DIW cleaning process; and

[0137] Dry the substrate.

[0138] Optionally, after the DIO3 oxidation process, the monolithic substrate cleaning and drying process may further include spraying SC2 on the substrate surface to perform a metal removal process.

[0139] Reference Figure 5 According to another embodiment of the present invention, a method for removing particles or photoresist from a substrate includes a tank-based SPM process integrated into a menu program and a subsequent DIO3-based monolithic cleaning process. Figure 4 The difference lies in the method revealed in the text. Figure 5 The method further includes: before transferring one or more substrates to the SPM bath, transferring the one or more substrates to an HF formulation solution bath to perform an HF formulation solution immersion process. Specifically, one or more substrates are transferred to the HF formulation solution bath, and after the one or more substrates have been processed in the HF formulation solution bath, the one or more substrates are removed from the HF formulation solution bath and rinsed, and then transferred to the SPM bath. The HF formulation solution can attack the photoresist, remove silicon-containing polymers and fluorocarbon polymers from the substrate sidewalls, and facilitate subsequent SPM photoresist removal.

[0140] In one embodiment, the HF formulation solution is a mixture of HF and DIW, with a mixing ratio of HF to DIW of 100:1 to 1000:1.

[0141] In another embodiment, the HF formulation solution is a BOE mixture. In the BOE mixture, the weight percentage of HF is 0.05% to 10%, and the weight percentage of NH4F is 10% to 40%.

[0142] According to one embodiment of the present invention, a method for removing particles or photoresist from a substrate includes a DIO3-based monolithic substrate cleaning and drying process for photoresist attack and thinning integrated into a menu program, a subsequent tank-type SPM-based process, and a final monolithic substrate cleaning and drying process. The method specifically includes the following steps:

[0143] One or more substrates are transferred to one or more single-substrate cleaning chambers to complete the single-substrate cleaning and drying process, wherein the single-substrate cleaning and drying process includes at least one DIO3 oxidation process.

[0144] After one or more substrates are processed in one or more single-piece cleaning chambers, the one or more substrates are transferred to the SPM solution in the SPM tank.

[0145] After one or more substrates are processed in the SPM bath, they are removed from the SPM bath and rinsed; and

[0146] The substrate or multiple substrates are transferred to one or more single-substrate cleaning chambers to perform single-substrate cleaning and drying processes.

[0147] More specifically, refer to Figure 6 In one embodiment, the DIO3-based monolithic substrate cleaning and drying process preceding the tank-type SPM-based process is performed in a monolithic cleaning chamber within the monolithic cleaning module of the tank-type monolithic integrated cleaning equipment. The DIO3-based monolithic substrate cleaning and drying process includes: surface etching with an HF formulation solution, DIO3 oxidation, DIW cleaning, and drying.

[0148] In another embodiment, the preceding DIO3-based monolithic substrate cleaning and drying process in the tank-type SPM-based process is performed in a monolithic cleaning chamber within the monolithic cleaning module of the tank-type monolithic integrated cleaning equipment. The DIO3-based monolithic substrate cleaning and drying process includes: a DIO3 oxidation process, a DIW cleaning process, and a drying process.

[0149] In one embodiment, the tank-based SPM-based process is performed in the tank module of a tank-based monolithic integrated cleaning device. The tank-based SPM-based process includes: SPM desmearing and DIW rinsing.

[0150] After the one or more substrates have completed the DIW rinsing process in the tank module, and before being transferred to one or more single-piece cleaning chambers, the one or more substrates are kept moist. More specifically, the one or more substrates are transferred to a moistening buffer to keep the substrates moist.

[0151] Similar to Figure 2 In one embodiment, the method disclosed herein involves a monolithic substrate cleaning and drying process following a tank-based SPM process, performed within a monolithic cleaning chamber of a tank-based monolithic integrated cleaning apparatus. The monolithic substrate cleaning and drying process includes: a surface etching process using an HF formulation solution, a DIO3 oxidation process, an SC1 particle removal process, a DIW cleaning process, and a drying process. Optionally, following the SC1 particle removal process, the monolithic substrate cleaning and drying process may further include an SC2 metal removal process.

[0152] In another embodiment, the monolithic substrate cleaning and drying process following the SPM-based process in the tank is performed in a monolithic cleaning chamber within the monolithic cleaning module of the tank-type monolithic integrated cleaning equipment. The monolithic substrate cleaning and drying process includes: a DIO3 oxidation process, an SC1 particle removal process, a DIW cleaning process, and a drying process. Optionally, after the SC1 particle removal process, the monolithic substrate cleaning and drying process may further include an SC2 metal removal process.

[0153] In another embodiment, the monolithic substrate cleaning and drying process following the SPM-based process in a tank is performed in a monolithic cleaning chamber within the monolithic cleaning module of a tank-type monolithic integrated cleaning apparatus. The monolithic substrate cleaning and drying process includes: surface etching with an HF formulation solution, a DIO3 oxidation process, a DIW cleaning process, and a drying process. Optionally, after the DIO3 oxidation process, the monolithic substrate cleaning and drying process may further include an SC2 metal removal process.

[0154] In another embodiment, the monolithic substrate cleaning and drying process following the SPM-based process in the tank is performed in a monolithic cleaning chamber within the monolithic cleaning module of the tank-based monolithic integrated cleaning equipment. The monolithic substrate cleaning and drying process includes: an SC1 particle removal process, a DIW cleaning process, and a drying process. Optionally, after the SC1 particle removal process, the monolithic substrate cleaning and drying process may further include an SC2 metal removal process.

[0155] Reference Figure 7 According to one embodiment of the present invention, a method for removing particles or photoresist from a substrate includes a DIO3-based monolithic substrate cleaning and drying process for photoresist attack and thinning integrated into a menu program, followed by a tank-type SPM-based process, and a final monolithic substrate cleaning and drying process. Figure 6 The difference lies in the method revealed in the text. Figure 7 The method further includes: an HF formulation solution soaking process prior to the SPM desizing process.

[0156] In all the embodiments of the present invention described above, DIO3 is a solution in which ozone is dissolved in DIW. SC1 is a mixture of ammonium hydroxide and hydrogen peroxide in deionized water, also known as "Standard Cleaning Solution-1". SC2 is a mixture of hydrochloric acid and hydrogen peroxide in deionized water, also known as "Standard Cleaning Solution-2".

[0157] It should be recognized that a DIW cleaning process can be inserted between any two chemical processes in a single-piece cleaning chamber. For example, a DIW cleaning process can be inserted between a DIO3 oxidation process and an SC1 particle removal process.

[0158] The present invention also discloses an apparatus for removing particles or photoresist from a substrate. The apparatus includes a tank module for performing a tank cleaning process on one or more substrates, a single-substrate cleaning module having multiple single-substrate cleaning cavities for performing single-substrate cleaning and drying processes, and a process robot for transferring one or more substrates between the tank module and the single-substrate cleaning module. The tank module includes at least one DIO3 tank configured to contain a DIO3 solution for processing one or more substrates, at least one SPM tank configured to contain an SPM solution for processing one or more substrates, at least one DIW tank configured to contain DIW for rinsing one or more substrates, and at least one second substrate transfer robot configured to transfer one or more substrates between the DIO3 tank, the SPM tank, and the DIW tank.

[0159] More specifically, refer to Figure 8 and Figure 9 This invention illustrates an apparatus for removing particles or photoresist from a substrate according to an alternative embodiment. The apparatus includes multiple, for example four, loading ports 81, each receiving a FOUP, a front-end module robot 82, a buffer area 88, a tank module 83, a process robot 84, and a monolithic cleaning module 85 having multiple monolithic cleaning chambers 851.

[0160] The trough module 83 includes a substrate carrying device 8301, a cleaning tank 8302, a first HF formulation solution tank 8303, a second HF formulation solution tank 8304, a first DIO3 tank 8305, a second DIO3 tank 8306, an SPM tank 8307, a first DIW tank 8308, a second DIW tank 8309, a moisturizing buffer zone 8310, a first substrate transfer robot 8313, a second substrate transfer robot 8314, a third substrate transfer robot 8315, a first lifting device 8311, a second lifting device 8312, a third lifting device 8316, a fourth lifting device 8317, and a fifth lifting device 8318.

[0161] When this device is used to remove particles and photoresist from a substrate, the process steps are as follows:

[0162] The front-end module robot 82 removes one or more substrates from the FOUP in one go or in several steps and transfers them to the substrate carrier 8301. The substrate carrier 8301 holds the one or more substrates and rotates them 90 degrees along the horizontal axis and then 90 degrees along the vertical axis, so that the one or more substrates are held vertically by the substrate carrier 8301.

[0163] A first substrate transfer robot 8313 picks up one or more substrates, such as 13 or 12 substrates, from a substrate carrier 8301 and transfers them to a first lifting device 8311. The first lifting device 8311 holds the one or more substrates and immerses them in an HF formulation solution contained in a first HF formulation solution tank 8303. The first substrate transfer robot 8313 picks up another one or more substrates from the substrate carrier 8301 and transfers them to a second lifting device 8312. The second lifting device 8312 holds the one or more substrates and immerses them in an HF formulation solution contained in a second HF formulation solution tank 8304.

[0164] After the process in the first HF formulation solution tank 8303 or the second HF formulation solution tank 8304 is completed, the second substrate transfer robot 8314 removes one or more substrates from the first HF formulation solution tank 8303 and transfers them to the first DIO3 tank 8305, or the second substrate transfer robot 8314 removes one or more substrates from the second HF formulation solution tank 8304 and transfers them to the second DIO3 tank 8306. To reduce the risk of watermark formation on the substrate surface, the transfer time is preferably controlled within 20 seconds, and preferably within 10 seconds. The first lifting device 8311 and the second lifting device 8312 rise above the first HF formulation solution tank 8303 and the second HF formulation solution tank 8304, respectively. In this embodiment, the first HF formulation solution tank 8303, the second HF formulation solution tank 8304, the first DIO3 tank 8305, and the second DIO3 tank 8306 are arranged in two rows, with each row having one HF formulation solution tank and an adjacent DIO3 tank.

[0165] After the process in the first DIO3 tank 8305 or the second DIO3 tank 8306 is completed, the second substrate transfer robot 8314 removes one or more substrates from the first DIO3 tank 8305 or the second DIO3 tank 8306 and transfers them to the third lifting device 8316. The third lifting device 8316 brings the one or more substrates into and immerses them in the SPM solution contained in the SPM tank 8307.

[0166] After the process in SPM tank 8307 is completed, the third lifting device 8316 rises above SPM tank 8307, and the second substrate transfer robot 8314 takes one or more substrates from the third lifting device 8316 and transfers them to the fourth lifting device 8317 or the fifth lifting device 8318. The fourth lifting device 8317 or the fifth lifting device 8318 carries one or more substrates to the first DIW tank 8308 or the second DIW tank 8309 to perform QDR (Quick Dump Drain) or overflow cleaning processes.

[0167] After one or more substrates have been processed in the first DIW tank 8308 or the second DIW tank 8309, the fourth lifting device 8317 or the fifth lifting device 8318 is raised above the first DIW tank 8308 or the second DIW tank 8309. The third substrate transfer robot 8315 then picks up one or more substrates from the fourth lifting device 8317 or the fifth lifting device 8318 in one go or in multiple passes and transfers them to the moisturizing buffer 8310. In the moisturizing buffer 8310, the one or more substrates can be rotated from a vertical position to a horizontal position and remain moist before being transferred to one or more single-piece cleaning chambers 851 in the single-piece cleaning module 85. During the waiting period, the substrates in the moisturizing buffer 8310 can be sprayed with DI water to keep the substrate surface moist.

[0168] The process robot 84 picks up one or more substrates from the moisture buffer 8310 and transfers them to one or more single-substrate cleaning chambers 851 to perform a single-substrate cleaning and drying process.

[0169] After the single substrate cleaning and drying process in the single cleaning chamber 851 is completed, the process robot 84 takes out the substrate from the single cleaning chamber 851 and transfers it to the buffer area 88. Then, the front-end module robot 82 takes out the substrate from the buffer area 88 and transfers it back to FOUP.

[0170] In the trough module 83, the cleaning trough 8302 is used to clean the second substrate transfer robot 8314 when it is idle.

[0171] Reference Figure 10 and Figure 11 This invention illustrates an apparatus for removing particles or photoresist from a substrate according to another embodiment of the invention. The apparatus includes a plurality of loading ports 101, such as four, each loading port 101 receiving a FOUP, a front-end module robot 102, a buffer area 108, a tank module 103, a process robot 104, and a monolithic cleaning module 105 having a plurality of monolithic cleaning chambers 10501.

[0172] The trough module 103 includes a substrate carrying device 10301, a cleaning tank 10302, an HF formulation solution tank 10303, a first DIO3 tank 10304, a second DIO3 tank 10305, an SPM tank 10306, a first DIW tank 10307, ​​a second DIW tank 10308, a moisturizing buffer 10309, a first substrate transfer robot 10310, a second substrate transfer robot 10311, a third substrate transfer robot 10312, a first lifting device 10313, a third lifting device 10314, a fourth lifting device 10315, and a fifth lifting device 10316.

[0173] and Figure 8 and Figure 9 Compared to the apparatus shown in the previous embodiment, the apparatus shown in this embodiment has an HF formulation solution tank 10303, which is disposed between the first DIO3 tank 10304 and the second DIO3 tank 10305. Figure 8 and Figure 9 Compared to the apparatus shown in the previous embodiment, the apparatus shown in this embodiment lacks a second HF formulation solution tank, and correspondingly, also lacks a second lifting device. The substrate transfer sequence is the same as... Figure 8 and Figure 9 The embodiments shown are similar and will not be repeated here.

[0174] Please refer to Figures 12A-12C The image shows a DIO3 tank according to an embodiment of the present invention. The DIO3 tank has an outer tank 121, an inner tank 122, two overflow tanks 123, a cover 124, and a drive device 125.

[0175] The bottom of the outer tank 121 has two vents 1211. Two vent pipes 128 are connected to the two vents 1211 of the outer tank 121 respectively. Each of the two vent pipes 128 is equipped with a pressure monitor and a pressure damper 129. The material of the outer tank 121 can be PVC.

[0176] An inner tank 122 is disposed within an outer tank 121 and configured to contain a DIO3 solution. The inner tank 122 has a substrate holding base 1221 for supporting and holding one or more substrates. Two inlet pipes 1222 are provided within the inner tank 122 for supplying liquid to it. A drain port 1223 is provided at the bottom of the inner tank 122 for discharging the liquid from the inner tank 122 into the DIO3 tank. Preferably, the drain port 1223 is a rapid drain port. The inner tank 122 is made of high-purity quartz material.

[0177] Two overflow channels 123 are provided on both sides of the inner channel 122. Each overflow channel 123 has two drain holes 1231 for draining the liquid in the overflow channel 123 out of the DIO3 channel.

[0178] A cover 124 is disposed on the outer groove 121 to seal the outer groove 121. The top of the cover 124 has at least one air inlet 1241, and the bottom of the cover 124 has multiple exhaust holes 1242. A drive unit 125 is connected to the cover 124 for opening or closing the cover 124.

[0179] For better sealing, preferably, a sealing ring 126 is provided at the top of the outer groove 121. At least one pair of locking devices are provided on the outer groove 121 for locking the cover 124 when it is closed. Each locking device has a lock head 1271 and an actuator 1272, which is connected to the lock head 1271 and drives the lock head 1271 to rotate and move up and down. After the cover 124 is closed, the actuator 1272 drives the lock head 1271 to rotate above the cover 124, and then the actuator 1272 drives the lock head 1271 to descend, locking the cover 124. When the cover 124 needs to be opened, the actuator 1272 drives the lock head 1271 to rise, and then the actuator 1272 drives the lock head 1271 to rotate, disengaging the lock head 1271 from the cover 124, thus allowing the cover 124 to open.

[0180] During the process, after one or more substrates are transferred into the DIO3 tank and held by the substrate holding base 1221, the cover 124 is closed and the DIO3 tank is sealed to prevent ozone gas from leaking into the surrounding environment. Ozone has a pungent odor and is a toxic gas that can harm health. In this case, sealing the DIO3 tank and maintaining a very low ozone level in the environment for safety protection is challenging and particularly important.

[0181] In this embodiment, the inner tank 122 is used to contain the DIO3 solution. Two overflow tanks 123 serve as DIO3 overflow areas. The outer tank 121 is used to discharge gas. A gap exists between the top of the inner tank 122 and the top of the outer tank 121 to ensure sufficient space for gas discharge and prevent ozone leakage from the outer tank 121. Furthermore, the present invention also discloses an ozone leak-proof structure. Specifically, a purified gas, such as nitrogen or CDA, is supplied to the outer tank 121 through at least one inlet 1241 located at the top of the cover 124 and multiple vents 1242 located at the bottom of the cover 124. The purified gas is supplied into the outer tank 121 as a gas carrier to prevent ozone gas from leaking into the surrounding environment. Simultaneously, it is important to control the exhaust pressure of the outer tank 121 to balance the intake and exhaust, which can be achieved through a pressure monitor and a pressure damper 129.

[0182] The foregoing description of the present invention is intended to explain the technical solutions. The technical solutions of the present invention are not limited to the specific forms disclosed in this embodiment. Obviously, various modifications and variations can be made based on the teachings given above. These modifications and variations, which are obvious to those skilled in the art, are all within the scope of protection of the claims of this invention.

Claims

1. A method of removing particles or photoresist on a substrate, characterized by, comprising: transferring one or more substrates into a DIO3 solution contained in a DIO3 tank to soften a photoresist crust on a surface of the one or more substrates, wherein a liquid in the DIO3 tank is DIW before the one or more substrates are transferred into the DIO3 tank, the step of transferring the one or more substrates into the DIO3 solution contained in the DIO3 tank comprises: opening a lid of the DIO3 tank, transferring the one or more substrates into the DIW of the DIO3 tank, closing the lid of the DIO3 tank; overflowing the DIO3 solution from a bottom of the DIO3 tank to replace the DIW in the DIO3 tank, the DIO3 solution has an ozone concentration of 30 ppm to 120 ppm; after the DIO3 tank is filled with the DIO3 solution, maintaining the DIO3 solution overflowing for 5 to 15 minutes; quickly draining the DIO3 solution; filling the DIO3 tank with pure DIW; opening the lid of the DIO3 tank, and removing the one or more substrates from the DIO3 tank; after the one or more substrates are processed in the DIO3 tank, transferring the one or more substrates removed from the DIO3 tank into an SPM solution contained in an SPM tank; after the one or more substrates are processed in the SPM tank, removing the one or more substrates from the SPM tank and rinsing the one or more substrates; and transferring the one or more substrates into one or more single wafer cleaning chambers to perform single wafer substrate cleaning and drying processes.

2. The method of claim 1, wherein, further comprising: before the one or more substrates are transferred into the DIO3 tank, transferring the one or more substrates into an HF recipe solution contained in an HF recipe solution tank.

3. The method of claim 2, wherein, the HF recipe solution is a mixture of HF and DIW, a mixing ratio of HF to DIW is 100:1 to 1000:

1.

4. The method of claim 2, wherein, the HF recipe solution is a BOE mixture, the BOE mixture has a weight percentage of HF of 0.05% to 10%, and a weight percentage of NH4F of 10% to 40%.

5. The method of claim 1, wherein, a flow rate of DIO3 supplied into the DIO3 tank is 10 LPM to 30 LPM.

6. The method of claim 1, wherein, the SPM solution is a mixture of H2SO4 and H2O2, a mixing ratio of H2SO4 to H2O2 is 3:1 to 50:1, and a temperature of the mixture is 80°C to 150°C.

7. The method of claim 1, wherein, the step of rinsing the one or more substrates comprises a quick drain rinse and an overflow rinse.

8. The method of claim 1, wherein, further comprising: after the one or more substrates are removed from the SPM tank and before the one or more substrates are transferred into the one or more single wafer cleaning chambers, the one or more substrates are kept in a wet state.

9. The method of claim 1, wherein, the processes in the one or more single wafer cleaning chambers comprise: at least one HF recipe solution surface etching process, at least one DIO3 oxidation process, at least one SC1 particle removal process, at least one DIW cleaning process, and at least one drying process.

10. The method of claim 9, wherein, after the SC1 particle removal process, further comprising at least one SC2 metal removal process.

11. The method of claim 1, wherein, the processes in the one or more single wafer cleaning chambers comprise: at least one DIO3 oxidation process, at least one SC1 particle removal process, at least one DIW cleaning process, and at least one drying process.

12. The method of claim 11, wherein, After the SC1 particle removal process, at least one SC2 metal removal process is further included.

13. The method of claim 1, wherein, The processes in the one or more single-wafer cleaning chambers include: at least one HF recipe solution surface etching process, at least one DIO3 oxidation process, at least one DIW cleaning process, and at least one drying process.

14. The method of claim 13, wherein, After the DIO3 oxidation process, at least one SC2 metal removal process is further included.

15. The method of claim 1, wherein, The processes in the one or more single-wafer cleaning chambers include: at least one SC1 particle removal process, at least one DIW cleaning process, and at least one drying process.

16. The method of claim 15, wherein, After the SC1 particle removal process, at least one SC2 metal removal process is further included.

17. An apparatus for removing particles or photoresist from a substrate, comprising: include: a slot module configured to perform a slot cleaning process for one or more substrates; a single-wafer cleaning module having a plurality of single-wafer cleaning chambers configured to perform single-wafer substrate cleaning and drying processes; and a process robot configured to transfer one or more substrates between the slot module and the single-wafer cleaning module; wherein the slot module has at least one DIO3 slot configured to hold a DIO3 solution for treating one or more substrates, the DIO3 solution being used to soften a photoresist crust on a surface of the one or more substrates, the DIO3 solution having an ozone concentration of 30 ppm to 120 ppm, at least one SPM slot configured to hold an SPM solution for treating one or more substrates, at least one DIW slot configured to hold a DIW for cleaning one or more substrates, and at least one second substrate transfer robot configured to transfer one or more substrates between the DIO3 slot, the SPM slot, and the DIW slot, the DIO3 slot including: an outer tank having at least one exhaust port at a bottom of the outer tank; an inner tank disposed inside the outer tank and configured to hold the DIO3 solution, the inner tank having a substrate holding pedestal configured to support and hold one or more substrates, the inner tank having at least one liquid inlet tube configured to supply the inner tank with the DIO3 solution, the inner tank having at least one liquid outlet port at a bottom of the inner tank configured to drain the liquid in the inner tank out of the DIO3 slot, the inner tank having a gap between a top of the inner tank and a top of the outer tank, the gap being configured to prevent ozone from leaking out of the outer tank; two overflow tanks disposed on both sides of the inner tank, each overflow tank having at least one liquid outlet hole configured to drain the liquid in the overflow tank out of the DIO3 slot; a lid disposed on the outer tank to seal the outer tank, the lid having at least one gas inlet port at a top of the lid, the lid having a plurality of gas outlet holes at a bottom of the lid; a driving device connected to the lid and configured to open or close the lid.

18. The apparatus of claim 17, wherein, The slot module further includes at least one HF recipe solution slot configured to hold an HF recipe solution for treating one or more substrates.

19. The apparatus of claim 18, wherein, The slot module has two DIO3 slots and two HF formula solution slots, which are arranged in two rows, each row having one HF formula solution slot and one adjacent DIO3 slot.

20. The apparatus of claim 19, wherein, The slot module further comprises: a substrate supporting device configured to hold and rotate one or more substrates; a first lifting device and a second lifting device corresponding to the two HF formula solution slots and configured to hold one or more substrates; and a first substrate transfer robot; wherein the first substrate transfer robot takes one or more substrates from the substrate supporting device and transfers the one or more substrates to the first lifting device or the second lifting device, the first lifting device or the second lifting device immerses the one or more substrates in the HF formula solution contained in the corresponding HF formula solution slot, after the one or more substrates are processed in the HF formula solution slot, the second substrate transfer robot takes the one or more substrates from the HF formula solution slot and transfers the one or more substrates to the adjacent DIO3 slot, and the first lifting device or the second lifting device rises above the two HF formula solution slots.

21. The apparatus of claim 18, wherein, The slot module has two DIO3 slots and one HF formula solution slot, which is arranged between the two DIO3 slots.

22. The apparatus of claim 17, wherein, The slot module has a moisturizing buffer zone for keeping one or more substrates in a wet state before being transferred to one or more single-piece cleaning cavities.

23. The apparatus of claim 17, wherein, The slot module has a cleaning slot for cleaning the second substrate transfer robot.

24. The apparatus of claim 17, wherein, Further comprising a sealing ring arranged on the top of the outer slot, and at least one pair of locking devices arranged on the outer slot for locking the cover when the cover is closed.

25. The apparatus of claim 24, wherein, Each locking device has a lock head and an actuator connected to the lock head and driving the lock head to rotate and lift.

26. The apparatus of claim 17, wherein, Further comprising at least one exhaust duct connected to the exhaust port of the outer slot, and at least one pressure monitor and at least one pressure damper arranged on the exhaust duct.

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