Diode device
By setting N-type doped regions arranged in a stepped manner in the P-type doped region, the hole injection efficiency during forward conduction of the diode device is reduced, the problem of long reverse recovery time is solved, and more efficient reverse recovery and reduced electromagnetic interference are achieved.
CN115810673BActive Publication Date: 2026-07-17VANGUARD SEMICON CORP
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- VANGUARD SEMICON CORP
- Filing Date
- 2022-12-21
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
When existing diode devices operate at high frequencies, the hole injection efficiency is too high during forward conduction, resulting in a long reverse recovery time.
Method used
By setting a first N-type dopant and a second N-type dopant in the P-type dopant, the doping concentration of part of the P-type dopant is neutralized through a stepped arrangement and doping concentration difference, thereby reducing the hole injection efficiency during forward conduction.
Benefits of technology
It reduces the peak reverse recovery current, shortens the reverse recovery time, improves the reverse recovery efficiency and softness of the diode, and reduces electromagnetic interference.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN115810673B_ABST
Abstract
The application discloses a diode device, which comprises a cathode, a drift layer, a P-type doped part, a polysilicon part, a first N-type doped part, a second N-type doped part and an anode. The drift layer is arranged on the cathode. The P-type doped part is arranged on the side of the drift layer far from the cathode. The P-type doped part has at least two spaced grooves, and the grooves also extend into part of the drift layer. The polysilicon part is filled in the grooves. The first N-type doped part and the second N-type doped part are arranged in the P-type doped part and located between every two adjacent grooves. The first N-type doped part is in contact with the second N-type doped part. The anode is arranged on the side of the P-type doped part far from the cathode. In the application, the first N-type doped part and the second N-type doped part are arranged in the P-type doped part to neutralize the doping concentration of part of the P-type doped part, so that the injection efficiency of holes in the forward conduction is reduced.
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