Optical proximity correction method, system, electronic device and storage medium

Abstract

The application discloses an optical proximity correction method, system and computer readable storage medium, comprising: obtaining a first design layout, a second design layout and a first mask layout of the first design layout, wherein the first mask layout is obtained by converting first design layout data; performing XOR comparison between the first design layout and the second design layout to generate to-be-corrected region information, wherein the to-be-corrected region information comprises region coordinate information; performing optical proximity correction on the second design layout according to the to-be-corrected region information and the first mask layout to obtain a correction result; and performing replacement processing on the first mask layout according to the region coordinate information and the correction result to obtain a second mask layout. In the embodiment of the application, the difference between the second design layout and the first design layout can be automatically compared, and the optical correction efficiency is improved.

Description

TECHNICAL FIELD

[0001] The present application belongs to the field of computer-aided technology, and particularly relates to an optical proximity correction method and system, an electronic device and a computer readable storage medium. BACKGROUND

[0002] Photolithography is a core step of integrated circuit manufacturing, and the quality and resolution of photolithography determine the key process of the size that the integrated circuit can reach. In the photolithography process, optical proximity effect is generated because the wavelength of the light source used for deep submicron process node photolithography is generally greater than the line width of the chip to be manufactured. The minimum line width in the device is increasingly close to the limit of the photolithography projection system, and the diffraction effect of light causes imaging of the design pattern to be degraded, thereby causing the actual formed photolithography pattern to be seriously distorted relative to the pattern on the mask.

[0003] In order to solve the influence of the optical proximity effect, the optical proximity correction technology (OPC) emerges as the times require. The optical proximity correction technology solves the problem of the resolution limit of traditional photolithography by calculating and optimizing the mask pattern. After the layout design is completed, physical verification and manufacturability checking are needed, and then optical proximity correction and optical simulation verification are completed to ensure that no bad points occur in the photolithography manufacturing of the chip. However, the above scenarios all involve that after the layout is processed by the optical proximity correction, if there is a local unit circuit or wiring that is modified again, the optical proximity correction calculation and verification need to be performed again. This results in an increase in the amount of optical proximity correction calculation in the production of a super large scale layout, and the problem of time and effort consuming in repeated calculation occurs. SUMMARY

[0004] The present application aims to at least solve one of the technical problems existing in the prior art, and provides an optical proximity correction method, system, electronic device and computer readable storage medium, which can automatically compare the differences between the second design layout and the first design layout, and improve the optical correction efficiency.

[0005] In a first aspect, the present application provides an optical proximity correction method, comprising:

[0006] obtaining a first design layout, a second design layout and a first mask layout of the first design layout, wherein the first mask layout is obtained by converting the first design layout data;

[0007] performing XOR comparison between the first design layout and the second design layout to generate to-be-corrected region information, wherein the to-be-corrected region information comprises region coordinate information;

[0008] performing optical proximity correction on the second design layout according to the to-be-corrected region information and the first mask layout to obtain a correction result.

[0009] According to the region coordinate information and the correction result, the first mask layout is replaced to obtain a second mask layout.

[0010] The optical proximity correction method provided by the embodiment of the present application has at least the following beneficial effects: first, the first design layout, the second design layout and the first mask layout obtained by data conversion of the first design layout are acquired, and the first design layout and the second design layout are compared by exclusive OR to generate the to-be-corrected region information, which facilitates subsequent correction based on the to-be-corrected region information, improves the optical correction efficiency, and realizes automatic comparison of the differences between the first design layout and the second design layout; then, the second design layout is optically proximity corrected according to the to-be-corrected information and the first mask layout to obtain a correction result, thereby ensuring that no bad points appear in the chip in the photolithography manufacturing, reducing the time cost of optical proximity correction; finally, the first mask layout is replaced according to the region coordinate information and the correction result to obtain a second mask layout, which realizes correction of the second design layout and reduces the calculation amount and time cost of generating a mask pattern after local modification of the design layout.

[0011] According to some embodiments of the present application, the exclusive OR comparison of the first design layout and the second design layout to generate the to-be-corrected region information comprises:

[0012] The first design layout and the second design layout are compared by exclusive OR to obtain difference information.

[0013] The difference information is subjected to spatial clustering processing to generate the to-be-corrected region information.

[0014] According to some embodiments of the present application, the spatial clustering processing of the difference information to generate the to-be-corrected region information comprises:

[0015] The difference information is calculated based on a preset spatial clustering algorithm to obtain polygon region information, wherein the polygon region information is used to represent the affinity relationship of a plurality of polygon regions.

[0016] The polygon region information is subjected to region division to obtain the to-be-corrected region information.

[0017] According to some embodiments of the present application, the optical proximity correction of the second design layout according to the to-be-corrected region information and the first mask layout to obtain a correction result comprises:

[0018] At least one target rectangular region is determined according to the to-be-corrected region information.

[0019] extracting data of the second design layout in the target rectangular region to obtain a second design layout slice;

[0020] extracting data of the first mask layout in the target rectangular region to obtain mask pattern data;

[0021] performing optical proximity correction on the second design layout slice according to the mask pattern data to obtain the correction result.

[0022] According to some embodiments of the present application, the determining at least one target rectangular region according to the to-be-corrected region information comprises:

[0023] determining a to-be-corrected region area according to the region coordinate information;

[0024] performing an expanded optical diameter operation on the to-be-corrected region area to obtain the target rectangular region.

[0025] According to some embodiments of the present application, the performing optical proximity correction on the second design layout slice according to the mask pattern data to obtain the correction result comprises:

[0026] performing correction on the second design layout slice based on a preset lithography model and a preconfigured recipe parameter to obtain a slice correction result;

[0027] performing pattern correction on the slice correction result according to the mask pattern data to obtain the correction result.

[0028] According to some embodiments of the present application, the performing replacement processing on the first mask layout according to the region coordinate information and the correction result to obtain a second mask layout comprises:

[0029] determining a stitching region corresponding to the correction result in the first mask layout according to the region coordinate information;

[0030] replacing the stitching region in the first mask layout according to the correction result to obtain the second mask layout.

[0031] In a second aspect, the present application provides an optical proximity correction system, comprising:

[0032] a layout obtaining module, configured to obtain a first design layout, a second design layout and a first mask layout of the first design layout, wherein the first mask layout is obtained by converting data of the first design layout;

[0033] a layout comparison module, configured to perform exclusive OR comparison between the first design layout and the second design layout to generate to-be-corrected region information, wherein the to-be-corrected region information comprises region coordinate information;

[0034] An optical correction module is used to perform optical proximity correction on the second design layout based on the information of the area to be corrected and the first mask layout, and obtain a correction result;

[0035] The data replacement module is used to replace the first mask pattern according to the region coordinate information and the correction result to obtain the second mask pattern.

[0036] Thirdly, the present invention provides an electronic device comprising a memory and a processor, the memory storing a computer program, and the processor executing the computer program to implement the optical proximity correction method as described in the first aspect.

[0037] Fourthly, the present invention provides a computer-readable storage medium storing computer-executable instructions for causing a computer to perform the optical proximity correction method as described in the first aspect.

[0038] Other features and advantages of the invention will be set forth in the following description, and will be apparent in part from the description, or may be learned by practicing the invention. The objects and other advantages of the invention may be realized and obtained by means of the structures particularly pointed out in the description and the drawings. Attached Figure Description

[0039] The accompanying drawings are provided to further understand the technical solutions of the present invention and constitute a part of the specification. They are used together with the embodiments of the present invention to explain the technical solutions of the present invention, and do not constitute a limitation on the technical solutions of the present invention.

[0040] Figure 1 This is a flowchart of an optical proximity correction method provided in an embodiment of the present invention;

[0041] Figure 2 yes Figure 1 The flowchart of the specific method for step S102 in the process;

[0042] Figure 3 yes Figure 2 The flowchart of the specific method for step S202 in the text;

[0043] Figure 4 yes Figure 1 The flowchart of the specific method for step S103 in the process;

[0044] Figure 5 yes Figure 4 The flowchart of the specific method for step S401 in the process;

[0045] Figure 6 yes Figure 4A specific method flow chart of step S404 in

[0046] Figure 7 A specific method flow chart of step S104 in Figure 1 A specific method flow chart of step S404 in

[0047] Figure 8 A structural schematic diagram of an optical proximity correction system provided by an embodiment of the present application is shown in

[0048] Figure 9 A specific example of an optical proximity correction method provided by an embodiment of the present application is shown in

[0049] Figure 10 A specific example of an optical proximity correction method provided by an embodiment of the present application is shown in

[0050] Figure 11 A specific example of an optical proximity correction method provided by an embodiment of the present application is shown in

[0051] Figure 12 A hardware structural schematic diagram of an electronic device provided by an embodiment of the present application is shown in DETAILED DESCRIPTION

[0052] In order to make the objectives, technical solutions and advantages of the present application clearer, the present application is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application, and are not used to limit the present application.

[0053] It should be noted that although the logical order is shown in the flow chart, in some cases, the steps shown or described can be performed in an order different from that in the flow chart. The terms "first", "second", etc. in the specification and claims and the above-mentioned drawings are used to distinguish similar objects, and do not necessarily describe a specific order or sequence.

[0054] The application provides an optical proximity correction method, system and computer readable storage medium, first, a first design layout, a second design layout and a first mask layout obtained by data conversion of the first design layout are acquired, and the first design layout and the second design layout are compared by exclusive or, so that the to-be-corrected region information is generated, which facilitates subsequent correction based on the to-be-corrected region information, improves the optical correction efficiency, realizes automatic comparison of differences between the first design layout and the second design layout, then, the second design layout is optically proximity corrected according to the to-be-corrected information and the first mask layout, and a correction result is obtained, so that it is ensured that no bad point appears in the chip in photolithography manufacturing, the time cost of optical proximity correction is reduced, finally, the first mask layout is replaced according to the region coordinate information and the correction result, and a second mask layout is obtained, the correction of the second design layout is realized, and the calculation amount and time cost of regenerating a mask pattern after local modification of a design layout are reduced.

[0055] The embodiments of the application are further described below with reference to the drawings.

[0056] Reference Figure 1 , Figure 1 is a flowchart of an optical proximity correction method provided by an embodiment of the application, and the optical proximity correction method includes but is not limited to steps S101 to S104.

[0057] Step S101: acquiring a first design layout, a second design layout and a first mask layout of the first design layout;

[0058] It should be noted that the first mask layout is obtained by data conversion of the first design layout.

[0059] In some embodiments, the first design layout, the second design layout and the first mask layout of the first design layout are acquired, wherein the first mask layout is used for processing a mask, and the first mask layout is obtained by data conversion of the first design layout, so as to facilitate subsequent correction of the second design layout.

[0060] It should be noted that the process of data conversion of the first design layout to obtain the first mask layout includes but is not limited to logical operation on layers, optical proximity correction and the like, wherein the layer logical operation is addition, subtraction, exclusive or, enlargement and reduction operation of polygons of each layer, the optical proximity correction is a method of calculating a corrected mask pattern by using a model, specifically, edges of the first design layout are extracted, broken into multiple segments, each segment can be freely moved, the edges are moved, and auxiliary exposure patterns are inserted in the gaps of the patterns, through an optical model and a photoresist chemical reaction model, a simulated pattern after exposure is calculated, an edge error between the simulated pattern and an expected pattern is calculated, and the iteration is repeated multiple times until the edge error is less than a specific value, and a pattern set after edge movement is the obtained mask pattern set, and the first mask layout is obtained according to the mask pattern set.

[0061] Step S102: XOR comparison between the first design layout and the second design layout to generate the to-be-corrected region information.

[0062] It should be noted that the to-be-corrected region information includes region coordinate information.

[0063] In some embodiments, the first design layout and the second design layout are XOR compared to generate the to-be-corrected region information, so that the to-be-corrected region can be accurately divided, the correction accuracy is improved, and the difference between the first design layout and the second design layout is accurately obtained.

[0064] Step S103: performing optical proximity correction on the second design layout according to the to-be-corrected region information and the first mask layout to obtain a correction result.

[0065] In some embodiments, the optical proximity correction is performed on the second design layout according to the to-be-corrected region information and the first mask layout to obtain the correction result, so that the interference of adjacent patterns in the optical proximity correction process is avoided.

[0066] Step S104: performing replacement processing on the first mask layout according to the region coordinate information and the correction result to obtain a second mask layout.

[0067] In some embodiments, the replacement processing is performed on the first mask layout according to the region coordinate information and the correction result to obtain the second mask layout, so that the local modification of the layout is realized, and the calculation amount and time cost of the mask pattern generated after the local modification of the design layout are reduced.

[0068] Reference Figure 2 , Figure 2 is Figure 1 a specific method flowchart of step S102 in the method, and step S102 includes but is not limited to steps S201 to S202.

[0069] Step S201: XOR comparison between the first design layout and the second design layout to obtain difference information.

[0070] In some embodiments, the first design layout and the second design layout are subjected to Boolean XOR operation, the pattern difference between the first design layout and the second design layout is obtained, and the difference information is obtained, so as to facilitate the generation of the to-be-corrected region information subsequently.

[0071] It should be noted that the difference information can be represented by geometric pattern data, and the present embodiment does not make specific limitation.

[0072] Step S202: performing spatial clustering processing on the difference information to generate the to-be-corrected region information.

[0073] In some embodiments, the difference information is subjected to spatial clustering processing to generate the to-be-corrected region information, so as to accurately determine the region to be corrected and avoid correction deviation.

[0074] Referring to Figure 3 , Figure 3 is Figure 2 a specific method flowchart of step S202 in FIG. 2, and step S202 includes but is not limited to steps S301 to S302.

[0075] Step S301: calculating the difference information based on a preset spatial clustering algorithm to obtain polygon region information;

[0076] It should be noted that the polygon region information is used to represent the close-remote relationship of multiple polygon regions.

[0077] Step S302: dividing the polygon region information into regions to obtain to-be-corrected region information.

[0078] In steps S301 to S302 of some embodiments, the difference information is divided into regions based on a preset spatial clustering algorithm to obtain at least one region information, wherein the polygon region information is used to represent the close-remote relationship of multiple polygon regions, and then the polygon region information is divided into regions according to the close-remote relationship of the polygon regions to obtain the to-be-corrected region information, so as to accurately determine the region to be corrected.

[0079] It should be noted that the polygon region information includes various region information, such as the area of each rectangular region and the rectangular edge coordinates, and the to-be-corrected region information includes various region information of to-be-corrected regions, such as the number of to-be-corrected regions and the coordinates of to-be-corrected regions, wherein the to-be-corrected region information includes at least one embodiment which is not specifically limited.

[0080] Referring to Figure 4 , Figure 4 is Figure 1 a specific method flowchart of step S103 in FIG. 1, and step S103 includes but is not limited to steps S401 to S404.

[0081] Step S401: determining at least one target rectangular region according to the to-be-corrected region information;

[0082] In some embodiments, at least one target rectangular region is determined according to the to-be-corrected region information, wherein the target rectangular regions do not intersect with each other.

[0083] Step S402: extracting data of the second design layout in the target rectangular region to obtain a second design layout slice;

[0084] Step S403: data extraction is performed on the first mask layout in the target rectangular region to obtain mask pattern data;

[0085] Step S404: optical proximity correction is performed on the second design layout slice according to the mask pattern data to obtain a correction result.

[0086] In steps S401 to S404 of some embodiments, first, at least one target rectangular region is determined according to the to-be-corrected region information, and then data extraction is performed on the second design layout and the first mask layout in the determined target rectangular region to obtain the second design layout slice and the mask pattern data, so that optical proximity correction can be performed on the second design layout slice according to the mask pattern data, the correction of the second design layout is realized, the correction result is obtained, and the correction time and correction resources are saved.

[0087] Reference Figure 5 , Figure 5 is Figure 4 a specific method flowchart of step S401 in, and step S401 includes but is not limited to steps S501 to S502.

[0088] Step S501: determining the to-be-corrected region area according to the region coordinate information;

[0089] In some embodiments, the to-be-corrected region area is determined according to the region coordinate information in the to-be-corrected region information, so that the region that needs to be corrected can be accurately divided.

[0090] Step S502: performing an expanded optical diameter operation on the to-be-corrected region area to obtain a target rectangular region.

[0091] In some embodiments, since the optical proximity correction is affected by the lithography model, the patterns within a certain distance range near the to-be-corrected region will affect the imaging of the patterns during exposure, so it is necessary to perform an expanded optical diameter operation on the to-be-corrected region area to obtain a target rectangular region, so as to avoid the influence of the patterns on the imaging of the patterns during exposure.

[0092] It should be noted that the influence of the region beyond the optical diameter on the imaging of the patterns can be ignored, wherein the value of the expanded optical diameter depends on the lithography model, for example, for 193nm wavelength lithography, the optical influence distance is about 1um, so the value of the expanded optical diameter can be set according to the wavelength of the lithography model, and the present embodiment does not make specific limitations.

[0093] Reference Figure 6 , Figure 6 is Figure 4 a specific method flowchart of step S404 in, and step S404 includes but is not limited to steps S601-S602.

[0094] Step S601: correcting the second design layout slice based on a preset lithography model and a preconfigured recipe parameter to obtain a slice correction result;

[0095] Step S602: performing pattern correction on the slice correction result according to mask pattern data to obtain a correction result.

[0096] In steps S601 to S602 of some embodiments, the second design layout slice is corrected based on a preset lithography model and a preconfigured recipe parameter to obtain a slice correction result, and then the slice correction result is corrected according to mask pattern data to obtain a final correction result. In the process of correcting the second design layout slice according to the lithography model and the recipe parameter, since the distance between patterns is less than the optical diameter range, the patterns will affect the imaging of adjacent patterns when exposed, and the mask pattern data in the target rectangular region needs to be extracted for reference to correct the slice correction result, thereby obtaining the correction result.

[0097] Referring to Figure 7 , Figure 7 is Figure 1 a specific method flowchart of step S104 in

[0098] Step S701: determining a stitching region corresponding to the correction result in the first mask layout according to region coordinate information;

[0099] Step S702: replacing the stitching region in the first mask layout according to the correction result to obtain a second mask layout.

[0100] In steps S701 to S702 of some embodiments, the stitching region corresponding to the correction result in the first mask layout is determined according to region coordinate information, so as to accurately determine the region that needs to be stitched and replaced, and then the stitching region in the first mask layout is replaced according to the correction result to obtain a second mask layout corresponding to the second design layout, thereby realizing correction of the layout at a specific position, saving resources and time of layout stitching and replacement, and reducing the calculation amount and time cost of regenerating mask patterns after local modification of the design layout.

[0101] Referring to Figure 8 , the embodiments of the present application also provide an optical proximity correction system, which can implement the above-mentioned optical proximity correction method, and the system comprises:

[0102] A layout acquisition module 801 is configured to acquire a first design layout, a second design layout, and a first mask layout of the first design layout, wherein the first mask layout is obtained by converting first design layout data;

[0103] The layout comparison module 802 is configured to perform XOR comparison between the first design layout and the second design layout to generate region information to be corrected, wherein the region information to be corrected comprises region coordinate information.

[0104] The optical correction module 803 is configured to perform optical proximity correction on the second design layout according to the region information to be corrected and the first mask layout to obtain a correction result.

[0105] The data replacement module 804 is configured to replace the first mask layout according to the region coordinate information and the correction result to obtain the second mask layout.

[0106] The specific implementation of the optical proximity correction system is basically the same as the specific embodiments of the optical proximity correction method described above, and will not be repeated here.

[0107] In order to more clearly illustrate the optical proximity correction method provided by the embodiments of the present application, specific examples are described below.

[0108] Example 1

[0109] In semiconductor manufacturing, many chip process steps use photolithography technology, and the "film" used for these steps is called a mask. The mask is in units of layers, and the pattern data for manufacturing the mask is converted from one or more layers of design layout data. Each layer of design layout data is described by planar geometric data, including physical information data such as device and wiring topology definition.

[0110] When the feature size of an integrated circuit is smaller than the wavelength of the light source of a photolithography system, due to the interference and diffraction effects of light, the manufactured pattern is severely distorted, and the photolithography pattern on the silicon wafer is different from the design pattern. The imaging on the silicon wafer surface is different from the original layout, and the optical proximity effect causes uneven line width, line end shortening, and corner rounding. Therefore, the actual design layout pattern must be corrected for proximity effect.

[0111] Reference Figure 9 , Figure 9 is a schematic diagram of the optical proximity correction method provided by a specific example.

[0112] It can be understood that in the development process of an integrated circuit product, the product development may involve multiple iterations of modifying the layout, and some bad points may be found in the photolithography correction and verification, which are difficult to repair. The original design layout is the first design layout, and the mask layout calculated by optical correction is the first mask layout. The layout modified locally based on the first layout is the second design layout.

[0113] It should be noted that Figure 9The first design layout 101 and the first mask layout 102 are shown in FIG. 1. The first mask layout 102 is obtained by performing optical proximity correction on the first design layout 101. The first mask layout 102 is used to manufacture a pattern that is close to the target pattern after exposure and etching.

[0114] The optical proximity correction method provided in the embodiment is used to correct a second design layout based on a first design layout and a first mask layout to obtain a second mask layout. The method is as follows.

[0115] Step 1: load the first design layout and the first mask layout, and load the second design layout.

[0116] It should be noted that the first mask layout is the layout data of the first design layout after optical proximity correction.

[0117] Step 2: XOR compare the first design layout and the second design layout, and perform spatial clustering on the XOR result to obtain a coordinate range of a region to be corrected.

[0118] It should be noted that the Boolean XOR operation on the geometric figures can obtain the difference result of the two groups of figures, and the result is stored in the form of a polygon. The range covered by the difference polygon is the region where the two design layouts are different. The difference polygon is spatially clustered according to the spatial affinity relationship to form one or more non-overlapping rectangular regions. These rectangular regions are the regions to be corrected.

[0119] Reference Figure 10 , Figure 10 is a schematic diagram of the optical proximity correction method provided in another specific example;

[0120] It should be noted that the spatial clustering algorithm takes the edge distance between polygons as a parameter. When the edge distance is less than a certain value, the figures are divided into a set, for example, Figure 10 The first polygon 201 and the second polygon 202 in the figure are two figures in two figure sets, respectively. The minimum circumscribed rectangle of the first polygon 201 in the figure set is taken to form a rectangular region 203. The rectangular region 203 covers the region to be corrected.

[0121] Reference Figure 11 , Figure 11 is a schematic diagram of the optical proximity correction method provided in another specific example;

[0122] It should be noted that the region formed by the difference polygon can be a heterogeneous structure, for example, Figure 11The range covered by the difference polygon 301 is L-shaped. If the coverage area of the minimum circumscribed rectangle exceeds a certain value, and the range covered by the difference polygon is much smaller than the minimum circumscribed rectangle, the difference polygon can be covered by multiple circumscribed rectangles, i.e., the first circumscribed rectangle 302 and the second circumscribed rectangle 303, which are the regions to be corrected; further, the multiple difference polygons are polygon sets after spatial clustering, and the coverage area is approximately L-shaped. The above method is also used for processing.

[0123] Step three: according to the region to be corrected, the optical diameter distance is expanded to extract the second design layout slice, and the OPC correction is performed.

[0124] It can be understood that the optical diameter is used to quantitatively describe the range of proximity in the optical proximity correction, i.e., the pattern within how many distance ranges will affect the imaging of the pattern when exposed. The area beyond the optical diameter has negligible effect on the imaging of the pattern. When calculating the region to be corrected, the adjacent patterns affected by the optical action distance are selected together when the second design layout of the region to be corrected is cut.

[0125] Step four: the OPC result of the region to be corrected is stitched and replaced into the first mask layout according to the spatial coordinate position. After all the regions to be corrected are processed according to the above steps, the second mask layout is obtained.

[0126] The embodiment of the present application also provides an electronic device, which comprises a memory, a processor, a program stored in the memory and executable on the processor, and a data bus for realizing the connection and communication between the processor and the memory. The program is executed by the processor to realize the optical proximity correction method described above. The electronic device can be any intelligent terminal, such as a tablet computer or a vehicle-mounted computer.

[0127] Please refer to Figure 12 , Figure 12 The hardware structure of the electronic device of another embodiment is illustrated, which comprises:

[0128] The processor 901 can be implemented in a general-purpose CPU (Central Processing Unit), a microprocessor, an application-specific integrated circuit (ASIC), or one or more integrated circuits, and is used to execute related programs to realize the technical solutions provided by the embodiments of the present application.

[0129] The memory 902 can be implemented in the form of a read only memory (ROM), a static storage device, a dynamic storage device, or a random access memory (RAM), etc. The memory 902 can store an operating system and other application programs, and when the technical solutions provided by the embodiments of the present specification are implemented by software or firmware, the related program codes are stored in the memory 902 and are called and executed by the processor 901 to implement the optical proximity correction method of the embodiments of the present application;

[0130] The input / output interface 903 is configured to realize information input and output.

[0131] The communication interface 904 is configured to realize the communication interaction between the device and other devices, and can realize the communication through a wired manner (for example, a USB, a network cable, etc.) or a wireless manner (for example, a mobile network, WI FI, Bluetooth, etc.).

[0132] The bus 905 is configured to transmit information between various components (for example, the processor 901, the memory 902, the input / output interface 903, and the communication interface 904) of the device.

[0133] The processor 901, the memory 902, the input / output interface 903, and the communication interface 904 are connected to each other through the bus 905 to realize the communication connection between the device.

[0134] In addition, one embodiment of the present application further provides a computer readable storage medium, which stores computer executable instructions. The computer executable instructions are executed by a processor or a controller, for example, are executed by a processor in the above-mentioned system embodiment, so that the above-mentioned processor executes the optical proximity correction method in the above-mentioned embodiment.

[0135] The embodiments described in the embodiments of the present application are used to more clearly illustrate the technical solutions of the embodiments of the present application, and do not constitute a limitation on the technical solutions provided by the embodiments of the present application. Those skilled in the art can know that, with the evolution of technology and the appearance of new application scenarios, the technical solutions provided by the embodiments of the present application are also applicable to similar technical problems.

[0136] Those skilled in the art can understand that, Figures 1-7 The technical solutions shown in the above-mentioned embodiments do not constitute a limitation on the embodiments of the present application, and can include more or fewer steps than those shown in the figures, or combine certain steps, or different steps.

[0137] The system embodiments described above are merely illustrative, wherein the units described as separate components can or can not be physically separated, i.e., can be located in one place, or can be distributed to multiple network units. Part or all of the modules can be selected according to actual needs to achieve the purpose of the embodiment.

[0138] Those skilled in the art can understand that all or some steps in the method disclosed above, and the functional modules / units in the system, the device can be implemented as software, firmware, hardware and appropriate combinations thereof.

[0139] The terms "first", "second", "third", "fourth" and the like in the description of the application and in the claims of the foregoing drawings, if any, are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the use of the terms so

[0140] It should be understood that in this application, "at least one" means one or more, and "multiple" means two or more. "And / or" is used to describe the relationship between the associated objects, which means that there can be three relationships, for example, "A and / or B" can mean that there are three cases: only A, only B, and A and B exist at the same time, where A and B can be singular or plural. The character " / " generally represents that the associated objects before and after are in an "or" relationship. "At least one of the following" or similar expressions means any combination of these items, including any combination of single or multiple items. For example, at least one of a, b or c, can mean: a, b, c, "a and b", "a and c", "b and c", or "a and b and c", where a, b, and c can be single or multiple.

[0141] In several embodiments provided in the present application, it should be understood that the disclosed system and method can be implemented in other manners. For example, the system embodiments described above are merely schematic. For example, the division of the units is only a logical function division. There can be another division manner for the actual implementation, for example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. In addition, the displayed or discussed mutual couplings or direct couplings or communication connections between different units, can be indirect couplings or communication connections through some interfaces, and electrical, mechanical or other forms.

[0142] The units described as separate components may or may not be physically separate, and the components shown as units may or may not be physical units, that is, they can be located in one place, or can be distributed on multiple network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the embodiment.

[0143] In addition, the functional units in each embodiment of the present application can be integrated in one processing unit, or each unit can be physically present separately, or two or more units can be integrated in one unit. The integrated unit can be realized in the form of hardware or in the form of a software functional unit.

[0144] If the integrated unit is realized in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer readable storage medium. Based on this understanding, the technical solutions of the present application essentially or the part that contributes to the prior art or the whole or part of the technical solutions can be embodied in the form of a software product. The computer software product is stored in a storage medium, and includes multiple instructions for causing a computer device (which can be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the methods in the various embodiments of the present application. The aforementioned storage medium includes: a U disk, a mobile hard disk, a read-only memory (ROM), a random access memory (RAM), a magnetic disk or an optical disk, and various program storage media.

[0145] The preferred embodiments of the present application are described above with reference to the accompanying drawings, but this does not limit the scope of the present application. Any modifications, equivalent replacements and improvements made by those skilled in the art without departing from the scope and spirit of the present application should be within the scope of the present application.

Claims

1. An optical proximity correction method, characterized in that, The method includes: Obtain a first design layout, a second design layout, and a first mask layout of the first design layout, wherein the first mask layout is obtained by converting the first design layout data; The first design layout and the second design layout are XORed to generate information about the area to be corrected, wherein the information about the area to be corrected includes area coordinate information; Based on the information of the area to be corrected and the first mask layout, optical proximity correction is performed on the second design layout to obtain the correction result; The first mask layout is replaced based on the region coordinate information and the correction result to obtain the second mask layout; The information about the region to be corrected is used to determine at least one target rectangular region, which is the smallest bounding rectangle of a set of multiple polygonal regions divided according to a spatial clustering algorithm. Furthermore, when multiple polygonal regions in the minimum bounding rectangle are differential polygons, the area of ​​the minimum bounding rectangle is greater than a preset area, and the coverage area of ​​the differential polygons is much smaller than that of the minimum bounding rectangle, the minimum bounding rectangle is adjusted to be the differential polygon.

2. The optical proximity correction method according to claim 1, characterized in that, The step of performing an XOR comparison between the first design layout and the second design layout to generate information on the area to be corrected includes: The first design layout and the second design layout are compared by XOR to obtain the difference information; Spatial clustering is performed on the difference information to generate the information of the region to be corrected.

3. The optical proximity correction method according to claim 2, characterized in that, The step of performing spatial clustering processing on the difference information to generate the information of the region to be corrected includes: The difference information is calculated based on a preset spatial clustering algorithm to obtain polygonal region information, wherein the polygonal region information is used to characterize the closeness or distance between multiple polygonal regions. The polygonal region information is divided into regions to obtain the region information to be corrected.

4. The optical proximity correction method according to claim 1, characterized in that, The step of performing optical proximity correction on the second design layout based on the information of the area to be corrected and the first mask layout to obtain the correction result includes: At least one target rectangular region is determined based on the information of the region to be corrected; Data is extracted from the second design layout within the target rectangular area to obtain a slice of the second design layout; Data is extracted from the first mask layout within the target rectangular area to obtain mask graphic data; The second design layout slice is optically proximity-corrected based on the mask pattern data to obtain the correction result.

5. The optical proximity correction method according to claim 4, characterized in that, Determining at least one target rectangular region based on the region to be corrected includes: The area to be corrected is determined based on the region coordinate information. The area to be corrected is enlarged by an optical diameter operation to obtain the target rectangular region.

6. The optical proximity correction method according to claim 4, characterized in that, The step of performing optical proximity correction on the second design layout slice based on the mask pattern data to obtain the correction result includes: The second design pattern slice is corrected based on the preset photolithography model and pre-configured formula parameters to obtain the slice correction result; The slice correction result is obtained by performing graphic correction on the slice correction result based on the mask graphic data.

7. The optical proximity correction method according to claim 1, characterized in that, The step of replacing the first mask layout based on the region coordinate information and the correction result to obtain the second mask layout includes: Based on the region coordinate information, determine the stitching region corresponding to the correction result in the first mask layout; The stitching area in the first mask pattern is replaced according to the correction result to obtain the second mask pattern.

8. An optical proximity correction system, characterized in that, include: The layout acquisition module is used to acquire a first design layout, a second design layout, and a first mask layout of the first design layout, wherein the first mask layout is obtained by converting the first design layout data; The layout comparison module is used to perform an XOR comparison between the first design layout and the second design layout to generate information on the area to be corrected, wherein the information on the area to be corrected includes area coordinate information; An optical correction module is used to perform optical proximity correction on the second design layout based on the information of the area to be corrected and the first mask layout, and obtain a correction result; The data replacement module is used to replace the first mask layout according to the region coordinate information and the correction result to obtain the second mask layout; The information about the region to be corrected is used to determine at least one target rectangular region, which is the smallest bounding rectangle of a set of multiple polygonal regions divided according to a spatial clustering algorithm. Furthermore, when multiple polygonal regions in the minimum bounding rectangle are differential polygons, the area of ​​the minimum bounding rectangle is greater than a preset area, and the coverage area of ​​the differential polygons is much smaller than that of the minimum bounding rectangle, the minimum bounding rectangle is adjusted to be the differential polygon.

9. An electronic device, characterized in that, The electronic device includes a memory and a processor, the memory storing a computer program, and the processor executing the computer program to implement the optical proximity correction method according to any one of claims 1 to 7.

10. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores computer-executable instructions for causing a computer to perform the optical proximity correction method as described in any one of claims 1 to 7.

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