Ion beam detection device and method

Abstract

The present invention provides an ion beam detection device and method, wherein the laser is emitted by the laser unit so that the laser irradiates the ion beam in a manner perpendicular to the plane where the ion beam is located, and at the same time, a plurality of the laser units are arranged in a direction perpendicular to the extension direction of the channel so that a plurality of the lasers are arranged along the width direction of the ion beam, and by detecting the intensity of the light that passes through the ion beam without being offset, the beam states at multiple positions on the band-shaped ion beam can be detected, and since the laser will not affect the ion beam injection, the beam state of the ion beam injected into the wafer surface can be directly monitored, thereby improving the accuracy of process quality inspection.

Description

Technical Field

[0001] The present invention relates to the technical field of ion implantation, and in particular to an ion beam detection device and method. Background Art

[0002] As an advanced doping technology, ion implantation can adjust the electrical properties of the wafer implantation area, change the substrate crystal form and assist other process steps. At present, it is a crucial processing technology in large-scale and ultra-large-scale integrated circuit manufacturing. The principle of the ion implanter is to ionize atoms or gas molecules to make them cations, and then obtain target ions with a certain energy through a series of screening and acceleration and deceleration processes. Then, after the adjustment of the beam shape, the elimination of energy pollution, the parallelization of ion motion and the neutralization of electrons, the impurity ions are implanted into the wafer.

[0003] A commonly used ion implanter has a beam that is a "ribbon" with one dimension larger than the wafer diameter, which is determined by the shape of the extraction electrode and is called a ribbon beam. This type of ion implanter controls the wafer to move horizontally so that the ribbon beam sweeps across the wafer surface to achieve ion implantation on the wafer surface.

[0004] In order to know the quality of ion implantation on the wafer surface, it is necessary to detect the beam state of the ion beam.

[0005] In the prior art, since the one-dimensional size of the strip beam is larger than the diameter of the wafer to be implanted, a detection device is set within the beam range outside the wafer surface to detect the ion beam. However, this method can only obtain the beam state of the ion beam outside the wafer surface to indirectly know the quality of ion implantation, but cannot directly obtain the beam state of the ion beam on the wafer surface, resulting in inaccurate process quality detection.

[0006] Therefore, it is necessary to develop a new ion beam detection device and method to improve some of the above problems existing in the prior art. Summary of the invention

[0007] An object of the present invention is to provide an ion beam detection device and method, which can directly detect the beam current state of a ribbon-shaped ion beam.

[0008] To achieve the above-mentioned purpose, the ion beam detection device provided by the present invention includes: a carrier and a detection module arranged on the carrier; the carrier includes a channel extending along a first direction, and the channel is used for a band-shaped ion beam to pass through; the detection module includes a laser unit and a measuring unit; a plurality of the laser units are arranged along a second direction, and the second direction is perpendicular to the first direction; the laser unit is used to emit lasers to the band-shaped ion beam, so that the paths of the plurality of lasers are perpendicular to the plane where the ion beam is located and arranged along the width direction of the ion beam; the part of the laser that is not deflected after passing through the ion beam forms a passing light, and the measuring unit is arranged on the path of the passing light to detect the intensity of the passing light.

[0009] The beneficial effect of the ion beam detection device provided by the present invention is that: the laser unit emits a laser so that the laser irradiates the ion beam in a manner perpendicular to the plane where the ion beam is located, and at the same time, a plurality of the laser units are arranged in a direction perpendicular to the extension direction of the channel, so that a plurality of the lasers are arranged along the width direction of the ion beam, and by detecting the intensity of the passing light that passes through the ion beam without being offset, the beam states at multiple positions on the band-shaped ion beam can be detected, and since the laser will not affect the ion beam injection, the beam state of the ion beam injected into the wafer surface can be directly known, thereby improving the accuracy of process quality detection.

[0010] Optionally, the spacings between adjacent laser units are equal. This has the beneficial effect of facilitating uniform detection of the ribbon-shaped ion beam in the width direction.

[0011] Optionally, the number of the laser units is greater than or equal to 3 and less than or equal to 8.

[0012] Optionally, the channel surface is provided with a plurality of holes, the number of the holes is equal to the number of the measuring units, and the measuring units are all provided in the holes. The beneficial effect is that since light will be scattered or reflected when it contacts the surface of the medium, the scattered light and reflected light entering the inside of the holes are less, and the measuring units are provided inside the holes, which is conducive to improving the detection accuracy of the measuring units for the passing light.

[0013] Optionally, the detection module further comprises a calculation unit, which is connected to the measurement unit and is used to calculate the intensity differences of the plurality of passing lights. The beneficial effect is that by calculating the intensity differences of the plurality of passing lights, it is helpful to detect the beam uniformity of the ribbon-shaped ion beam in the width direction.

[0014] Optionally, the ion beam detection device further includes a blocking member, a driving mechanism and a positioning unit; the blocking member and the measuring unit are arranged along the first direction, and the blocking member is used to block part of the ion beam; the driving mechanism is connected to the blocking member and is used to drive the blocking member to move along the second direction; the positioning unit is connected to the blocking member and the measuring unit and is used to obtain the position of the blocking member and the position of the measuring unit. Its beneficial effect is that the blocking member is arranged in front of the measuring unit in the first direction and is used to block part of the ion beam. When the light intensity detected by the measuring unit is the same as the laser light intensity emitted by the laser unit, that is, part of the ion beam at the position of the measuring unit is blocked by the blocking member, at this time, the position coordinates of both the blocking member and the measuring unit are obtained by the positioning unit, and the beam direction of the ion beam can be known, and the beam direction of the ion beam can be adjusted according to the process requirements to obtain a better ion implantation effect.

[0015] Optionally, the carrier is a tubular part, and the carrier includes a first tube segment and a second tube segment, one end of the first tube segment is connected to one end of the second tube segment, the first tube segment is used to connect to an ion implanter, and the detection module is arranged in the second tube segment. The beneficial effect is that the laser is easily blocked, resulting in inaccurate detection of the beam flow state of the ion beam. The detection module is arranged in the second tube segment and the first tube segment is used to separate the second tube segment and the external device for generating the ion beam, which can effectively reduce the particles in the device generating the ion beam from entering the second tube segment, thereby improving the detection accuracy of the beam flow state of the ion beam.

[0016] Optionally, a light-absorbing material is provided on the inner surface of the carrier. The beneficial effect is that the laser light will be scattered or reflected when irradiated to the medium interface, and when the light is continuously scattered or reflected, it will interfere with the light intensity detection of the measuring unit; the light-absorbing material is used to absorb the light scattered or reflected to the inner surface of the carrier to prevent it from continuing to reflect, thereby reducing the interference with the light intensity detection of the measuring unit.

[0017] The present invention also provides an ion beam detection method, using the above ion beam detection device, comprising the following steps:

[0018] emitting a plurality of lasers toward the ribbon-shaped ion beam, wherein the lasers are perpendicular to the plane where the ion beam is located and arranged along the width direction of the ion beam;

[0019] detecting the intensity of the penetrating light formed by the laser passing through the ion beam without being deflected;

[0020] The state of the ion beam is determined based on the intensity of the transmitted light.

[0021] The beneficial effect of the ion beam detection method provided by the present invention is that: a laser is emitted to the band-shaped ion beam so that the laser irradiates the ion beam in a manner perpendicular to the plane where the ion beam is located, and at the same time, a plurality of the lasers are arranged along the width direction of the ion beam, and by detecting the intensity of the passing light that passes through the ion beam without being offset, the beam states at multiple positions on the band-shaped ion beam can be detected. Since the laser will not affect the ion beam injection, the beam state of the ion beam injected into the wafer surface can be directly known, thereby improving the accuracy of process quality detection.

[0022] Optionally, the ion beam detection method further includes the following steps: using a blocking member to move in the width direction of the ion beam to block part of the ion beam; using a measuring unit to detect the intensity of the passing light, and when the intensity of the passing light is equal to the intensity of the laser, recording the position of the blocking member and the position of the measuring unit; and calculating the direction of the ion beam according to the position of the blocking member and the position of the measuring unit. Its beneficial effect is that: the blocking member is set in front of the measuring unit in the beam direction of the ion beam to block the ion beam, and the blocking member is moved in the width direction of the ion beam. When the light intensity detected by the measuring unit is the same as the light intensity of the emitted laser, that is, part of the ion beam at the position of the measuring unit is blocked by the blocking member, then the position coordinates of both the blocking member and the measuring unit are obtained, and the beam direction of the ion beam can be known, and the beam direction of the ion beam can be adjusted according to the process requirements to obtain a better ion implantation effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 is a schematic cross-sectional structural diagram of the ion beam detection device described in the first embodiment of the present invention;

[0024] Figure 2 for Figure 1 A schematic diagram of the structure inside the carrier shown;

[0025] Figure 3 is a schematic cross-sectional structural diagram of the ion beam detection device described in the second embodiment of the present invention;

[0026] Figure 4 for Figure 3 A schematic diagram showing the positional relationship between the blocking member, the laser unit and the measuring unit;

[0027] Figure 5 It is a schematic diagram showing that the beam direction of the ion beam does not deviate under an ideal condition;

[0028] Figure 6 Schematic diagram of the deviation of the beam direction of the ion beam under actual conditions.

[0029] 1. Carrier; 101. First tube section; 102. Second tube section; 2. Ion beam; 3. Laser; 301. Passing light; 4. Laser unit; 5. Measuring unit; 6. Hole; 7. Correction magnetic field; 8. Blocking member; 9. Blocking area. DETAILED DESCRIPTION

[0030] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein should be understood by people with general skills in the field to which the present invention belongs. "Including" and similar words used in this article mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

[0031] In order to solve the problems existing in the prior art, an embodiment of the present invention provides an ion beam detection device, referring to Figure 1 and Figure 2 The ion beam detection device includes: a carrier 1 and a detection module arranged on the carrier 1; the carrier 1 includes a channel extending along a first direction, the first direction is the direction A shown in the figure, and the channel is used for the band-shaped ion beam 2 to pass through; the detection module includes a laser unit 4 and a measuring unit 5; a plurality of the laser units 4 are arranged along a second direction, the second direction is the direction B shown in the figure, and the second direction is perpendicular to the first direction; the laser unit 4 is used to emit lasers 3 to the band-shaped ion beam 2, so that the paths of the plurality of lasers 3 are perpendicular to the plane where the ion beam 2 is located and arranged along the width direction of the ion beam 2; the part of the laser 3 that is not deflected after passing through the ion beam 2 forms a passing light 301, and the measuring unit 5 is arranged on the path of the passing light 301, and is used to detect the intensity of the passing light 301.

[0032] In some embodiments of the present invention, referring to Figure 1 The carrier 1 is a straight tubular part, and the interior of the carrier 1 has the channel that runs through from one end of the carrier 1 to the other end, and the channel extends along the first direction, that is, the direction A shown in the figure; the ion beam 2 passes through the carrier 1 in the channel along the first direction and then performs ion implantation on the wafer.

[0033] In some specific embodiments, the cross-sectional shape of the carrier 1 may be circular or rectangular.

[0034] In some embodiments of the present invention, referring to Figure 1 and Figure 2 The detection module includes a laser unit 4 and a measuring unit 5. The laser unit 4 is used to emit the laser 3. The measuring unit 5 is arranged on the path of the laser 3. The path direction of the laser 3 between the laser unit 4 and the measuring unit 5 is perpendicular to the plane where the strip-shaped ion beam 2 is located.

[0035] In some embodiments of the present invention, referring to Figure 2 , the laser unit 4 is arranged along the second direction, that is, along the direction B shown in the figure, and the direction A shown in the figure is perpendicular to the direction B shown in the figure; during the use of the ion beam detection device, the second direction is the width direction of the band-shaped ion beam 2, so that some of the lasers 3 irradiate the ion beam 2 in a manner perpendicular to the plane where the ion beam 2 is located, and some of the lasers 3 are arranged along the width direction of the ion beam 2.

[0036] In some embodiments of the present invention, the number of the laser units 4 may be 3, 4, 5, 6, 7 or 8.

[0037] Specifically, refer to Figure 2 The six laser units 4 are arranged on the carrier 1 along the second direction, that is, direction B as shown in the figure, and the spacing between adjacent laser units 4 is equal. The six measuring units 5 are arranged in a one-to-one correspondence with the six laser units 4.

[0038] In some specific embodiments of the present invention, the measuring unit 5 and the laser unit 4 can be arranged on the outside of the carrier 1, and by opening a hole in the carrier 1, the laser 3 emitted by the laser unit 4 can irradiate the ion beam 2 inside the carrier 1 and enable the measuring unit 5 to detect the intensity of the passing light 301 after the laser 3 passes through the area where the ion beam 2 is located.

[0039] In some other specific embodiments of the present invention, the measuring unit 5 and the laser unit 4 may be disposed inside the carrier 1 .

[0040] In some embodiments of the present invention, referring to Figure 2, the receiving surface of the measuring unit 5 is circular, and its diameter is larger than the diameter of the light spot formed by the passing light 301 irradiating the receiving surface; specifically, when the laser 3 passes through the area where the ion beam 2 is located, part of the laser 3 does not collide or deflect to form the passing light 301 directly irradiating the measuring unit 5, and part of the laser 3 collides with the ions in the ion beam 2 and is scattered and deflected, and cannot be irradiated on the measuring unit 5, so that the energy intensity of the passing light 301 detected by the measuring unit 5 is less than the energy intensity of the laser 3 emitted by the laser unit 4, thereby determining the beam state of the ion beam 2.

[0041] In some embodiments of the present invention, the detection range of the measuring unit 5 is adjusted accordingly according to the wavelengths of the laser 3 and the passing light 301 .

[0042] In some embodiments of the present invention, the measuring unit may be a photosensor.

[0043] It should be noted that the components and specific measurement methods required for measuring the laser light intensity by the measurement unit are common knowledge to those skilled in the art and will not be described in detail here.

[0044] In some specific embodiments of the present invention, the ion beam detection device needs to be parameter calibrated before use; specifically, before ion implantation into the wafer, the ion beam 2 is first generated, and a Faraday cup or other detection equipment is used to detect the beam state of the ion beam 2 and adjust it to a stable state for achieving a predetermined process. At this time, the ion beam detection device is used to detect the ion beam 2, and the intensity data of the passing light 301 is obtained as standard data; when ion implantation is subsequently performed on the wafer, the ion beam detection device is used to monitor the ion beam 2 in real time, and the real-time data is compared with the standard data to know the beam state of the ion beam 2 during ion implantation.

[0045] In some embodiments of the present invention, the beam state of the ion beam 2 includes beam size and beam uniformity.

[0046] Specifically, when the beam current of the ion beam 2 is large, more portions of the laser light 3 are scattered and deflected by the collision of the ion beam 2, resulting in a smaller intensity of the passing light 301; when the beam current is small, the intensity of the passing light 301 is large.

[0047] Specifically, the beam uniformity includes the uniformity of the ion beam 2 in the direction of ion movement. When the beam uniformity of the ion beam 2 in the direction of ion movement is not good, the beam size fluctuates, and the intensity of the passing light 301 detected by the same measuring unit 5 fluctuates accordingly.

[0048] Specifically, the beam uniformity includes the uniformity of the ion beam 2 in the width direction. When the beam uniformity of the ion beam 2 in the width direction is poor, there will be an intensity difference between the intensities of the passing light 301 detected by several measuring units 5.

[0049] In some embodiments of the present invention, referring to Figure 2 A plurality of holes 6 are arranged on the surface of the channel, the number of the holes 6 is equal to the number of the measuring units 5 , and the measuring units 5 are arranged in each of the holes 6 .

[0050] Specifically, refer to Figure 2 A row of six holes 6 are provided on the channel surface on a side opposite to the laser unit 4 , and a measuring unit 5 is disposed in each hole 6 .

[0051] In some embodiments of the present invention, the detection module further includes a calculation unit, which is connected to the measurement unit 5 and is used to calculate the intensity difference of a number of the passing lights 301, and to determine the beam uniformity of the ion beam 2 in its width direction through the intensity difference.

[0052] In some embodiments of the present invention, referring to Figure 3 and Figure 4 The ion beam detection device also includes a blocking member 8, a driving mechanism (not shown in the figure) and a positioning unit (not shown in the figure); the blocking member 8 and the measuring unit 5 are arranged along the first direction, that is, along the direction A shown in the figure, and the blocking member 8 is used to block part of the ion beam 2; the driving mechanism is connected to the blocking member 8, and is used to drive the blocking member 8 to move along the second direction, that is, along the direction B shown in the figure or the opposite direction; the positioning unit is connected to the blocking member 8 and the measuring unit 5, and is used to obtain the position of the blocking member 8 and the position of the measuring unit 5.

[0053] In some specific embodiments, the blocking member 8 is a graphite block.

[0054] Specifically, refer to Figure 3 and Figure 4 , the blocking member 8 is arranged in front of the measuring unit 5 in the first direction and is used to block the ion beam 2, that is, the blocking member 8 is located on the left side of the measuring unit 5 in the figure, and the ions in the ion beam 2 are blocked by the blocking member 8 during the movement from the left side to the right side in the figure, and a blocking area 9 without the ion beam 2 is formed on the right side of the blocking member 8 in the figure, and the laser 3 passes through the blocking area 9 and irradiates the measuring unit 5. At this time, the light intensity detected by the measuring unit 5 is equal to the intensity of the laser 3 emitted by the laser unit 4.

[0055] Ideally, refer to Figure 5 , the beam direction of the ion beam 2 is not offset, and the beam direction is the horizontal direction shown in the figure. By adjusting the positions of the blocking member 8 and the measuring unit 5, the coordinates of the position of the blocking member 8 obtained by the position unit and the position of the measuring unit 5 in the vertical direction shown in the figure are consistent. At this time, the laser 3 detected by the measuring unit 5 is located in the blocking area 9, and the light intensity detected by the measuring unit 5 is the intensity of the laser 3 emitted by the laser unit 4.

[0056] In actual situations, refer to Figure 6 , there is a certain offset in the beam direction of the ion beam 2, and there is a certain angle α between the beam direction and the horizontal direction shown in the figure. If the coordinates of the measuring unit 5 and the blocking member 8 in the vertical direction shown in the figure are consistent, the laser 3 detected by the measuring unit 5 is not in the blocking area 9 due to the beam offset. What the measuring unit 5 detects is the intensity of the penetrating light 301 formed after the laser 3 collides with the ion beam 2.

[0057] In actual situations, refer to Figure 6 After the blocking member 8 is moved a distance L1 in the vertical direction as shown in the figure, the laser 3 passes through the blocking area 9 to irradiate the measuring unit 5. The light intensity detected by the measuring unit 5 is equal to the intensity of the laser 3 emitted by the laser unit 4. The positions of the blocking member 8 and the measuring unit 5 at this time are recorded, and the angle α of the deviation of the ion beam 2 can be obtained, thereby knowing the beam direction of the ion beam 2.

[0058] It should be noted that the driving mechanism may be a mechanism for driving the blocking member 8 to perform linear motion, and its structure is common knowledge to those skilled in the art, so it will not be described in detail here.

[0059] It should be noted that the position unit may be various sensors that sense the displacement of an object and transmit signals. This technical content is common knowledge to those skilled in the art and will not be elaborated herein.

[0060] In some embodiments of the present invention, referring to Figure 1 and Figure 3 The carrier 1 is a tubular part, and the carrier 1 includes a first tube segment 101 and a second tube segment 102. One end of the first tube segment 101 is connected to one end of the second tube segment 102. The first tube segment 101 is used to connect to an ion implanter. The ion implanter includes a correction magnetic field 7. The correction magnetic field 7 is used to parallelize the beam of the ion beam 2. The detection module is arranged on the second tube segment 102.

[0061] In some specific embodiments, refer to Figure 1 and Figure 3, the first pipe section 101 bends when transitioning to the second pipe section 102.

[0062] In some embodiments of the present invention, a light absorbing material is disposed on the inner surface of the carrier 1 .

[0063] In some specific embodiments, a nano light-absorbing coating is coated on the inner surface of the carrier 1 .

[0064] The embodiment of the present invention provides an ion beam detection method, referring to Figure 1 and Figure 2 , using the above ion beam detection device, comprising the following steps:

[0065] S01: emitting a plurality of lasers 3 toward a ribbon-shaped ion beam 2, wherein the lasers 3 are perpendicular to the plane where the ion beam 2 is located and are arranged along the width direction of the ion beam 2;

[0066] S02: Detecting the intensity of the passing light 301 formed by the laser 3 passing through the ion beam 2 without being deflected;

[0067] S03 : judging the state of the ion beam 2 according to the intensity of the passing light 301 .

[0068] In some embodiments of the present invention, referring to Figure 3 , Figure 4 and Figure 6 , the S03 further comprises the following steps:

[0069] S11: using the blocking member 8 to move in the width direction of the ion beam 2 to block a portion of the ion beam 2;

[0070] S12: when the intensity detected by the measuring unit 5 is equal to the intensity of the laser 3, the position of the blocking member 8 and the position of the measuring unit 5 are recorded;

[0071] S13 : Calculate the direction of the ion beam 2 according to the position of the blocking member 8 and the position of the measuring unit 5 .

[0072] It should be noted that the steps and principles of the above-mentioned ion beam detection method correspond one-to-one to the structure of the above-mentioned ion beam detection device, and can be implemented by the above-mentioned ion beam detection device, so they will not be repeated here.

[0073] Although the embodiments of the present invention are described in detail above, it is obvious to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations are within the scope and spirit of the present invention as described in the claims. Moreover, the present invention described herein may have other embodiments and may be implemented or realized in a variety of ways.

Claims

1. An ion beam detection device, characterized in that: include: A carrier, a detection module, a blocking member, a driving mechanism and a positioning unit arranged on the carrier; The carrier comprises a channel extending in a first direction, wherein the channel is used for a ribbon-shaped ion beam to pass through; The detection module includes a laser unit and a measurement unit; A plurality of the laser units are arranged along a second direction, and the second direction is perpendicular to the first direction; The laser unit is used to emit laser light to the ribbon-shaped ion beam, so that the paths of the laser light are perpendicular to the plane where the ion beam is located and arranged along the width direction of the ion beam; The portion of the laser light that is not deflected after passing through the ion beam forms a passing light, and the measuring unit is arranged on the path of the passing light to detect the intensity of the passing light; The blocking member and the measuring unit are arranged along the first direction, and the blocking member is used to block part of the ion beam; The driving mechanism is connected to the blocking member and is used to drive the blocking member to move along the second direction; The position unit is connected to the blocking member and the measuring unit, and is used to obtain the position of the blocking member and the position of the measuring unit.

2. The ion beam detection device according to claim 1, characterized in that: The intervals between adjacent laser units are equal.

3. The ion beam detection device according to claim 1, characterized in that: The number of the laser units is greater than or equal to 3 and less than or equal to 8.

4. The ion beam detection device according to claim 1, characterized in that: The channel surface is provided with a plurality of holes, the number of the holes is equal to the number of the measuring units, and the measuring units are arranged in the holes.

5. The ion beam detection device according to claim 1, characterized in that: The detection module further comprises a calculation unit, which is connected to the measurement unit and is used to calculate a plurality of intensity differences of the passing lights.

6. The ion beam detection device according to claim 1, characterized in that: The carrier is a tubular part, comprising a first tube segment and a second tube segment, one end of the first tube segment is connected to one end of the second tube segment, the first tube segment is used to connect to an ion implanter, and the detection module is arranged on the second tube segment.

7. The ion beam detection device according to claim 1, characterized in that: The inner surface of the carrier is provided with light absorbing material.

8. An ion beam detection method, characterized in that: Using the ion beam detection device according to any one of claims 1 to 7 comprises the following steps: emitting a plurality of lasers toward the ribbon-shaped ion beam, wherein the lasers are perpendicular to the plane where the ion beam is located and arranged along the width direction of the ion beam; detecting the intensity of the penetrating light formed by the laser passing through the ion beam without being deflected; The state of the ion beam is determined based on the intensity of the transmitted light.

9. The ion beam detection method according to claim 8, characterized in that: The step of judging the state of the ion beam according to the intensity of the penetrating light further comprises the following steps: Using a blocking member to move in a width direction of the ion beam to block a portion of the ion beam; When the intensity detected by the measuring unit is equal to the intensity of the laser, recording the position of the blocking member and the position of the measuring unit; The direction of the ion beam is calculated according to the position of the blocking member and the position of the measuring unit.

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