sensor

Abstract

A sensor includes an insulating layer including a flat portion and a protruding portion, a first MR element, and a second MR element. The protruding portion has a first inclined surface and a second inclined surface. The first MR element is disposed on the first inclined surface. The second MR element is disposed on the second inclined surface. The protruding portion extends in a first direction parallel to an upper surface of a substrate, and end portions of the first direction included in the protruding portion are respectively recessed in a plurality of recesses recessed in a direction parallel to the upper surface of the substrate.

Description

Technical Field

[0001] The present invention relates to a sensor having sensor elements disposed on an inclined surface. Background Technology

[0002] In recent years, magnetic sensors using magnetoresistive elements have been employed in various applications. In systems incorporating magnetic sensors, it is sometimes desirable to detect a magnetic field component that includes a direction perpendicular to the surface of the substrate using a magnetoresistive element disposed on a substrate. In such cases, by providing a soft magnetic material that converts the magnetic field perpendicular to the surface of the substrate into a magnetic field parallel to the surface of the substrate, or by disposing of the magnetoresistive element on an inclined surface formed on the substrate, it is possible to detect a magnetic field component that includes a direction perpendicular to the surface of the substrate.

[0003] Japanese Patent Application Publication No. 2006-261401 discloses a magnetic sensor in which an X-axis sensor, a Y-axis sensor, and a Z-axis sensor are disposed on a substrate. The magnetoresistive element constituting the Z-axis sensor is disposed on the inclined surface of a protrusion formed on a base film of the substrate. The protrusion is formed by dry etching of a thick film made of silicon oxide. The magnetoresistive element is formed by photolithography etching of a multilayer metal thin film formed on the inclined surface of a groove.

[0004] In magnetic sensors that use magnetoresistive elements tilted relative to the surface of a substrate, such as the magnetic sensor disclosed in Japanese Patent Application Publication No. 2006-261401, it is preferable to form more magnetoresistive elements on the tilted surface to improve the sensitivity of the magnetic sensor. Viewed from above, the tilted surface has a shape that is longer in one direction. Magnetoresistive elements are also formed near the ends of the tilted surface. However, near the ends of the tilted surface, the photoresist used to form the photoresist mask during etching may flow, sometimes preventing the formation of metal films such as electrodes or magnetoresistive elements with high precision.

[0005] The above-mentioned problems are not limited to magnetic sensors, but apply to all sensors with sensor elements formed on inclined surfaces. Summary of the Invention

[0006] The object of the present invention is to provide a sensor capable of improving the accuracy of the shape of a sensor element formed on an inclined surface.

[0007] The sensor of the present invention is configured to detect a predetermined physical quantity. The sensor of the present invention comprises: a substrate having an upper surface; a support member disposed on the substrate; and a sensor element configured such that its physical properties vary according to the predetermined physical quantity. The support member includes a flat portion having a flat surface parallel to the upper surface of the substrate, and at least one protrusion having a shape protruding from the flat surface. The at least one protrusion has an inclined surface inclined relative to the upper surface of the substrate. The sensor element includes a functional layer constituting at least a portion of the sensor element. The functional layer is disposed on the inclined surface. The at least one protrusion extends along a first direction parallel to the upper surface of the substrate and includes a plurality of recesses at the end of the at least one protrusion in the first direction that are recessed in a direction parallel to the upper surface of the substrate.

[0008] In the sensor of the present invention, at least one protrusion includes a plurality of recesses. Therefore, according to the present invention, the accuracy of the shape of the sensor element formed on the inclined surface can be improved.

[0009] Other objects, features and advantages of the present invention will become fully apparent from the following description. Attached Figure Description

[0010] Figure 1 This is a perspective view of the magnetic sensor according to the first embodiment of the present invention.

[0011] Figure 2 This is a functional block diagram showing the structure of a magnetic sensor device including the magnetic sensor of the first embodiment of the present invention.

[0012] Figure 3 This is a circuit diagram showing the circuit structure of the first detection circuit according to the first embodiment of the present invention.

[0013] Figure 4 This is a circuit diagram showing the circuit structure of the second detection circuit according to the first embodiment of the present invention.

[0014] Figure 5 This is a top view showing a portion of the magnetic sensor according to the first embodiment of the present invention.

[0015] Figure 6 This is a cross-sectional view showing a portion of the magnetic sensor according to the first embodiment of the present invention.

[0016] Figure 7 This is a side view showing the magnetoresistive effect element according to the first embodiment of the present invention.

[0017] Figure 8 This is a top view showing the support member according to the first embodiment of the present invention.

[0018] Figure 9This is a cross-sectional view showing the first and second portions of the protrusion in the first embodiment of the present invention.

[0019] Figure 10 This is a cross-sectional view showing the first and third portions of the protrusion in the first embodiment of the present invention.

[0020] Figure 11 This is a top view showing a plurality of recesses in the first embodiment of the present invention.

[0021] Figure 12 It means Figure 11 A top view of one of the multiple recesses shown.

[0022] Figure 13 This is a top view showing a first modified example of the arrangement of multiple ends of multiple protrusions according to the first embodiment of the present invention.

[0023] Figure 14 This is a top view showing a second variation of the arrangement of multiple ends of multiple protrusions according to the first embodiment of the present invention.

[0024] Figure 15 This is a top view showing a modified example of the end of the protrusion in the first embodiment of the present invention.

[0025] Figure 16 This is a top view showing a plurality of recesses in the second embodiment of the present invention. Detailed Implementation

[0026] The embodiments of the present invention described below relate to a sensor configured to detect a predetermined physical quantity. In each embodiment, the sensor includes a sensor element configured such that its properties change according to the predetermined physical quantity. For example, the predetermined physical quantity may be at least one of the direction and intensity of the magnetic field of the object being detected. In this case, the sensor element may also be a magnetic detection element configured to detect changes in at least one of the direction and intensity of the magnetic field of the object. A sensor including a magnetic detection element is also called a magnetic sensor. The magnetic sensor is configured to detect at least one of the direction and intensity of the magnetic field of the object. Hereinafter, embodiments will be described in detail using the case where the sensor is a magnetic sensor as an example.

[0027] [First Implementation Method]

[0028] First, refer to Figure 1 and Figure 2 The structure of the magnetic sensor according to the first embodiment of the present invention will be described. Figure 1 This is a perspective view showing the magnetic sensor of this embodiment. Figure 2This is a functional block diagram showing the structure of a magnetic sensor device including the magnetic sensor of this embodiment. The magnetic sensor 1 of this embodiment corresponds to the "sensor" of the present invention.

[0029] like Figure 1 As shown, the magnetic sensor 1 is in the form of a cuboid-shaped chip. The magnetic sensor 1 has an upper surface 1a and a lower surface located opposite each other, and four side surfaces connecting the upper surface 1a and the lower surface. Additionally, the magnetic sensor 1 has multiple electrode pads disposed on the upper surface 1a.

[0030] Here, refer to Figure 1 The reference coordinate system of this embodiment will be explained. The reference coordinate system is a coordinate system based on the magnetic sensor 1, and is an orthogonal coordinate system defined by three axes. In the reference coordinate system, the X direction, Y direction, and Z direction are defined. The X direction, Y direction, and Z direction are mutually orthogonal. In this embodiment, the direction perpendicular to the upper surface 1a of the magnetic sensor 1, i.e., the direction from the lower surface of the magnetic sensor 1 towards the upper surface 1a, is specifically defined as the Z direction. Furthermore, the direction opposite to the X direction is defined as the -X direction, the direction opposite to the Y direction is defined as the -Y direction, and the direction opposite to the Z direction is defined as the -Z direction. The three axes of the reference coordinate system are defined as axes parallel to the X direction, axes parallel to the Y direction, and axes parallel to the Z direction.

[0031] Hereinafter, the position in front of the reference position in the Z direction will be referred to as "above," and the position on the opposite side of the reference position relative to "above" will be referred to as "below." Furthermore, regarding the components of the magnetic sensor 1, the surface at one end in the Z direction will be referred to as the "upper surface," and the surface at one end in the -Z direction will be referred to as the "lower surface." Additionally, the expression "when viewed from the Z direction" refers to viewing the object from a position away from it along the Z direction.

[0032] like Figure 2 As shown, the magnetic sensor 1 includes a first detection circuit 20 and a second detection circuit 30. Each of the first and second detection circuits 20 and 30 includes multiple magnetic detection elements, configured to detect the magnetic field of an object and generate at least one detection signal. In this embodiment, in particular, the multiple magnetic detection elements are multiple magnetoresistive elements. Hereinafter, magnetoresistive elements will be referred to as MR elements.

[0033] The multiple detection signals generated by the first and second detection circuits 20 and 30 are processed by the processor 40. The magnetic sensor 1 and the processor 40 constitute the magnetic sensor device 100. The processor 40 is configured to process the multiple detection signals generated by the first and second detection circuits 20 and 30 to generate a first detection value and a second detection value that correspond to components of the magnetic field in two mutually different directions at a predetermined reference position. In this embodiment, in particular, the two mutually different directions are a direction parallel to the XY plane and a direction parallel to the Z direction. The processor 40 is, for example, constructed from an application-specific integrated circuit (ASIC).

[0034] The processor 40 may also be included in the support body supporting the magnetic sensor 1. This support body has multiple electrode pads. The first and second detection circuits 20 and 30 and the processor 40 are connected, for example, via the multiple electrode pads of the magnetic sensor 1, the multiple electrode pads of the support body, and multiple bonding wires. When the multiple electrode pads of the magnetic sensor 1 are disposed on the upper surface 1a of the magnetic sensor 1, the magnetic sensor 1 may also be mounted on the upper surface of the support body with its lower surface facing the upper surface of the support body.

[0035] Next, refer to Figures 3-6 The first and second detection circuits 20 and 30 are described below. Figure 3 This is a circuit diagram showing the circuit structure of the first detection circuit 20. Figure 4 This is a circuit diagram showing the circuit structure of the second detection circuit 30. Figure 5 This is a top view showing a portion of magnetic sensor 1. Figure 6 This is a cross-sectional view showing a portion of the magnetic sensor 1.

[0036] Here, as Figure 5 As shown, the U direction and V direction are defined as follows. The U direction is the direction of rotation from the X direction to the -Y direction. The V direction is the direction of rotation from the Y direction to the X direction. In this embodiment, the U direction is specifically defined as the direction of rotation α from the X direction to the -Y direction, and the V direction is defined as the direction of rotation α from the Y direction to the X direction. Furthermore, α is an angle greater than 0° and less than 90°. In one example, α is 45°. In addition, the direction opposite to the U direction is defined as the -U direction, and the direction opposite to the V direction is defined as the -V direction.

[0037] In addition, such as Figure 6As shown, the W1 and W2 directions are defined as follows. The W1 direction is the direction of rotation from the V direction to the -Z direction. The W2 direction is the direction of rotation from the V direction to the Z direction. In this embodiment, the W1 direction is specifically defined as the direction of rotation β from the V direction to the -Z direction, and the W2 direction is defined as the direction of rotation β from the V direction to the Z direction. Furthermore, β is an angle greater than 0° and less than 90°. In addition, the direction opposite to the W1 direction is defined as the -W1 direction, and the direction opposite to the W2 direction is defined as the -W2 direction. The W1 and W2 directions are both orthogonal to the U direction.

[0038] The first detection circuit 20 is configured to detect the component of the magnetic field parallel to the W1 direction of the object, and generate at least one first detection signal corresponding to the component. The second detection circuit 30 is configured to detect the component of the magnetic field parallel to the W2 direction of the object, and generate at least one second detection signal corresponding to the component.

[0039] like Figure 3 As shown, the first detection circuit 20 includes a power supply terminal V2, a ground terminal G2, signal output terminals E21 and E22, a first resistor R21, a second resistor R22, a third resistor R23, and a fourth resistor R24. The multiple MR elements of the first detection circuit 20 constitute the first to fourth resistors R21, R22, R23, and R24.

[0040] The first resistor R21 is located between the power supply terminal V2 and the signal output terminal E21. The second resistor R22 is located between the signal output terminal E21 and the ground terminal G2. The third resistor R23 is located between the signal output terminal E22 and the ground terminal G2. The fourth resistor R24 ​​is located between the power supply terminal V2 and the signal output terminal E22.

[0041] like Figure 4 As shown, the second detection circuit 30 includes a power supply terminal V3, a ground terminal G3, signal output terminals E31 and E32, a first resistor R31, a second resistor R32, a third resistor R33, and a fourth resistor R34. The multiple MR elements of the second detection circuit 30 constitute the first to fourth resistors R31, R32, R33, and R34.

[0042] The first resistor R31 is located between the power supply terminal V3 and the signal output terminal E31. The second resistor R32 is located between the signal output terminal E31 and the ground terminal G3. The third resistor R33 is located between the signal output terminal E32 and the ground terminal G3. The fourth resistor R34 is located between the power supply terminal V3 and the signal output terminal E32.

[0043] Apply a specified voltage or current to power supply terminals V2 and V3 respectively. Ground terminals G2 and G3 are each grounded.

[0044] Hereinafter, the plurality of MR elements in the first detection circuit 20 will be referred to as a plurality of first MR elements 50B, and the plurality of MR elements in the second detection circuit 30 will be referred to as a plurality of second MR elements 50C. The first and second detection circuits 20 and 30 are constituent elements of the magnetic sensor 1; therefore, it can also be said that the magnetic sensor 1 includes a plurality of first MR elements 50B and a plurality of second MR elements 50C. Furthermore, any MR element will be indicated by the symbol 50.

[0045] Figure 7 This is a side view of the MR element 50. The MR element 50 is a spin-valve type MR element. The MR element 50 has: a magnetized fixed layer 52 with a fixed orientation, a magnetized free layer 54 with an orientation that can vary according to the direction of the object's magnetic field, and a gap layer 53 disposed between the magnetized fixed layer 52 and the free layer 54. The MR element 50 can be a TMR (tunneling magnetoresistance) element or a GMR (giant magnetoresistance) element. In a TMR element, the gap layer 53 is a tunnel barrier layer. In a GMR element, the gap layer 53 is a non-magnetic conductive layer. In the MR element 50, the resistance value varies according to the angle between the magnetization direction of the free layer 54 and the magnetization direction of the magnetized fixed layer 52. The resistance value is at its minimum when the angle is 0° and at its maximum when the angle is 180°. In each MR element 50, the free layer 54 has an anisotropic shape with its easy magnetization axis orthogonal to the magnetization direction of the magnetized fixed layer 52. Furthermore, as a device for setting a predetermined direction for the free layer 54, a magnet that applies a bias magnetic field to the free layer 54 can also be used.

[0046] The MR element 50 also has an antiferromagnetic layer 51. The antiferromagnetic layer 51, the magnetization fixation layer 52, the gap layer 53, and the free layer 54 are sequentially stacked. The antiferromagnetic layer 51 is made of an antiferromagnetic material and generates exchange coupling with the magnetization fixation layer 52, fixing the magnetization direction of the magnetization fixation layer 52. Alternatively, the magnetization fixation layer 52 can be a so-called self-pinned fixation layer (SFP layer). A self-pinned fixation layer has a stacked iron structure consisting of a ferromagnetic layer, a non-magnetic intermediate layer, and a ferromagnetic layer, where two ferromagnetic layers are antiferromagnetically coupled. When the magnetization fixation layer 52 is a self-pinned fixation layer, the antiferromagnetic layer 51 can be omitted.

[0047] Furthermore, the arrangement of layers 51-54 in MR element 50 can also be consistent with... Figure 7 The configuration shown is reversed from top to bottom.

[0048] exist Figure 3 and Figure 4In the diagram, solid arrows indicate the direction of magnetization of the magnetized fixed layer 52 of the MR element 50. Hollow arrows indicate the direction of magnetization of the free layer 54 of the MR element 50 when no target magnetic field is applied to the MR element 50.

[0049] exist Figure 3 In the example shown, the magnetization direction of the magnetization fixing layer 52 in each of the first and third resistor sections R21 and R23 is the W1 direction. The magnetization direction of the magnetization fixing layer 52 in each of the second and fourth resistor sections R22 and R24 is the -W1 direction. Furthermore, the free layer 54 of each of the plurality of first MR elements 50B has an anisotropic shape with its easy magnetization axis direction parallel to the U direction. When no target magnetic field is applied to the first MR element 50B, the magnetization direction of the free layer 54 in each of the first and second resistor sections R21 and R22 is the U direction. In the above case, the magnetization direction of the free layer 54 in each of the third and fourth resistor sections R23 and R24 is the -U direction.

[0050] exist Figure 4 In the example shown, the magnetization direction of the magnetization fixing layer 52 in each of the first and third resistor sections R31 and R33 is the W2 direction. The magnetization direction of the magnetization fixing layer 52 in each of the second and fourth resistor sections R32 and R34 is the -W2 direction. Furthermore, the free layer 54 of each of the plurality of second MR elements 50C has an anisotropic shape, with its easy magnetization axis direction parallel to the U direction. When no target magnetic field is applied to the second MR element 50C, the magnetization direction of the free layer 54 in each of the first and second resistor sections R31 and R32 is the U direction. In the above case, the magnetization direction of the free layer 54 in each of the third and fourth resistor sections R33 and R34 is the -U direction.

[0051] The magnetic sensor 1 includes a magnetic field generator configured to apply a magnetic field of a predetermined direction to the free layers 54 of each of the plurality of first MR elements 50B and the plurality of second MR elements 50C. In this embodiment, the magnetic field generator includes a coil 80 that applies a magnetic field of a predetermined direction to the free layers 54 of each of the plurality of first MR elements 50B and the plurality of second MR elements 50C.

[0052] Furthermore, from the perspective of manufacturing precision of the MR element 50, the magnetization direction of the magnetization of the magnetization fixing layer 52 and the direction of the easy magnetization axis of the free layer 54 can be slightly offset from the aforementioned directions. Additionally, the magnetization of the magnetization fixing layer 52 can also be configured to include a magnetization component with the aforementioned direction as the primary component. In this case, the magnetization direction of the magnetization fixing layer 52 is the aforementioned direction or approximately the aforementioned direction.

[0053] The following is for reference Figure 5 and Figure 6The specific structure of magnetic sensor 1 is described in detail. Figure 6 express Figure 5 A portion of the cross section at the location indicated by line 6-6.

[0054] The magnetic sensor 1 includes a substrate 301 with an upper surface 301a, insulating layers 302, 303, 304, 305, 306, 307, 308, 309, and 310, multiple lower electrodes 61B and 61C, multiple upper electrodes 62B and 62C, multiple lower coil elements 81, and multiple upper coil elements 82. The upper surface 301a of the substrate 301 is parallel to the XY plane. The Z direction is also perpendicular to the upper surface 301a of the substrate 301. Furthermore, the coil elements are part of the winding of the coil.

[0055] An insulating layer 302 is disposed on a substrate 301. A plurality of lower coil elements 81 are disposed on the insulating layer 302. An insulating layer 303 is disposed on the insulating layer 302 around the plurality of lower coil elements 81. Insulating layers 304, 305, and 306 are sequentially stacked on the plurality of lower coil elements 81 and the insulating layer 303.

[0056] Multiple lower electrodes 61B and multiple lower electrodes 61C are disposed on insulating layer 306. Insulating layer 307 is disposed on insulating layer 306 around the multiple lower electrodes 61B and around the multiple lower electrodes 61C. Multiple first MR elements 50B are disposed on the multiple lower electrodes 61B. Multiple second MR elements 50C are disposed on the multiple lower electrodes 61C. Insulating layer 308 is disposed on the multiple lower electrodes 61B, the multiple lower electrodes 61C, and insulating layer 307 around the multiple first MR elements 50B and around the multiple second MR elements 50C. Multiple upper electrodes 62B are disposed on the multiple first MR elements 50B and insulating layer 308. Multiple upper electrodes 62C are disposed on the multiple second MR elements 50C and insulating layer 308. Insulating layer 309 is disposed on insulating layer 308 around the multiple upper electrodes 62B and around the multiple upper electrodes 62C.

[0057] An insulating layer 310 is disposed over a plurality of upper electrodes 62B, a plurality of upper electrodes 62C, and an insulating layer 309. A plurality of upper coil elements 82 are disposed over the insulating layer 310. The magnetic sensor 1 may also further include an insulating layer (not shown) covering the plurality of upper coil elements 82 and the insulating layer 310.

[0058] The magnetic sensor 1 includes a support member that supports a plurality of first MR elements 50B and a plurality of second MR elements 50C. The support member has at least one inclined surface that is inclined relative to the upper surface 301a of the substrate 301. In this embodiment, the support member is specifically formed of an insulating layer 305. Furthermore, in… Figure 5 In the diagram, the components of the magnetic sensor 1 are shown as an insulating layer 305, a plurality of first MR elements 50B, a plurality of second MR elements 50C, and a plurality of upper coil elements 82.

[0059] The insulating layer 305 has a plurality of convex surfaces 305c extending in a direction (Z direction) away from the upper surface 301a of the substrate 301. Each of the plurality of convex surfaces 305c extends in a direction parallel to the U direction. The overall shape of the convex surfaces 305c is such that... Figure 6 The convex surface 305c shown is a semi-cylindrical curved surface formed by moving its curved shape (arch shape) along a direction parallel to the U direction. Furthermore, multiple convex surfaces 305c are arranged at predetermined intervals in a direction parallel to the V direction.

[0060] Each of the plurality of convex surfaces 305c has an upper end portion that is furthest from the upper surface 301a of the substrate 301. In this embodiment, the upper end portion of each of the plurality of convex surfaces 305c is configured to extend in a direction parallel to the U direction. Here, we focus on any one of the plurality of convex surfaces 305c. The convex surface 305c includes a first inclined surface 305a and a second inclined surface 305b. The first inclined surface 305a is the surface of the convex surface 305c that is closer to the V direction side than the upper end portion of the convex surface 305c. The second inclined surface 305b is the surface of the convex surface 305c that is closer to the -V direction side than the upper end portion of the convex surface 305c. Figure 5 In the diagram, the boundaries of the first inclined surface 305a and the second inclined surface 305b are represented by dashed lines.

[0061] The upper end of the convex surface 305c can also be the boundary between the first inclined surface 305a and the second inclined surface 305b. In this case, Figure 5 The dashed line shown represents the upper end of the convex surface 305c.

[0062] The upper surface 301a of the substrate 301 is parallel to the XY plane. The first inclined surface 305a and the second inclined surface 305b are each inclined relative to the upper surface 301a of the substrate 301, i.e., the XY plane. In a cross section perpendicular to the upper surface 301a of the substrate 301, the spacing between the first inclined surface 305a and the second inclined surface 305b decreases as the distance from the upper surface 301a of the substrate 301 increases.

[0063] In this embodiment, there are multiple convex surfaces 305c, therefore, there are also multiple first inclined surfaces 305a and multiple second inclined surfaces 305b. The insulating layer 305 has multiple first inclined surfaces 305a and multiple second inclined surfaces 305b.

[0064] The insulating layer 305 also has a flat surface 305d surrounding a plurality of convex surfaces 305c. The flat surface 305d is a surface parallel to the upper surface 301a of the substrate 301. Each of the plurality of convex surfaces 305c protrudes from the flat surface 305d in the Z direction. In addition, in this embodiment, the plurality of convex surfaces 305c are arranged at predetermined intervals. Therefore, a flat surface 305d exists between two adjacent convex surfaces 305c in the V direction.

[0065] The insulating layer 305 includes a flat portion 32 having a flat surface 305d and at least one protrusion having a shape protruding from the flat surface 305d. In this embodiment, in particular, the at least one protrusion is a plurality of protrusions 31. Each of the plurality of protrusions 31 has a shape protruding in the Z direction. Each of the plurality of protrusions 31 extends in a direction parallel to the U direction and has a convex surface 305c. In this embodiment, the first inclined surface 305a and the second inclined surface 305b are each part of the convex surface 305c; therefore, it can also be said that each of the plurality of protrusions 31 has a first inclined surface 305a and a second inclined surface 305b.

[0066] Furthermore, the plurality of protrusions 31 are arranged at predetermined intervals in a direction parallel to the V direction. A flat portion 32 exists around the plurality of protrusions 31. The thickness (dimension in the Z direction) of the flat portion 32 is substantially constant.

[0067] Furthermore, insulating layer 304 has a substantial thickness (dimension in the Z direction) and is formed along the lower surface of insulating layer 305. Insulating layer 306 has a substantial thickness (dimension in the Z direction) and is formed along the upper surface of insulating layer 305.

[0068] Multiple lower electrodes 61B are disposed on multiple first inclined surfaces 305a. Multiple lower electrodes 61C are disposed on multiple second inclined surfaces 305b. As described above, the first inclined surfaces 305a and the second inclined surfaces 305b are each inclined relative to the upper surface 301a of the substrate 301, i.e., the XY plane. Therefore, the upper surfaces of each of the multiple lower electrodes 61B and each of the multiple lower electrodes 61C are also inclined relative to the XY plane. Therefore, it can also be said that multiple first MR elements 50B and multiple second MR elements 50C are disposed on inclined surfaces inclined relative to the XY plane. The insulating layer 305 is a component for supporting each of the multiple first MR elements 50B and multiple second MR elements 50C in an inclined manner relative to the XY plane.

[0069] Furthermore, in this embodiment, the first inclined surface 305a is curved. Therefore, the first MR element 50B is bent along the curved surface (first inclined surface 305a). In this embodiment, for convenience, the magnetization direction of the magnetization fixing layer 52 of the first MR element 50B is defined as a linear direction as described above. The magnetization direction of the magnetization fixing layer 52 of the first MR element 50B, i.e., the W1 direction and the -W1 direction, is also the direction of the wiring extension that connects to the portion near the first MR element 50B in the first inclined surface 305a.

[0070] Similarly, in this embodiment, the second inclined surface 305b is curved. Therefore, the second MR element 50C is bent along the curved surface (second inclined surface 305b). In this embodiment, for convenience, the magnetization direction of the magnetization fixing layer 52 of the second MR element 50C is defined as a linear direction as described above. The magnetization direction of the magnetization fixing layer 52 of the second MR element 50C, i.e., the W2 direction and the -W2 direction, is also the direction of the wiring extension that connects to the portion of the second MR element 50C near the second inclined surface 305b.

[0071] like Figure 5 As shown, a plurality of first MR elements 50B are arranged in a plurality in each of the U and V directions. On a first inclined surface 305a, the plurality of first MR elements 50B are arranged in a single column. Similarly, a plurality of second MR elements 50C are arranged in a plurality in each of the U and V directions. On a second inclined surface 305b, the plurality of second MR elements 50C are arranged in a single column. In this embodiment, the columns of the plurality of first MR elements 50B and the columns of the plurality of second MR elements 50C are alternately arranged in a direction parallel to the V direction.

[0072] Furthermore, when viewed from the Z direction, adjacent first MR element 50B and second MR element 50C can be offset in a direction parallel to the U direction, or they can be offset directly. Additionally, when viewed from the Z direction, two adjacent first MR elements 50B holding a second MR element 50C can be offset in a direction parallel to the U direction, or they can be offset directly. Furthermore, when viewed from the Z direction, two adjacent second MR elements 50C holding a first MR element 50B can be offset in a direction parallel to the U direction, or they can be offset directly.

[0073] Multiple first MR elements 50B are connected in series using multiple lower electrodes 61B and multiple upper electrodes 62B. Referring here... Figure 7 The connection method of multiple first MR elements 50B is described in detail. Figure 7In the diagram, symbol 61 represents the lower electrode corresponding to any MR element 50, and symbol 62 represents the upper electrode corresponding to any MR element 50. For example... Figure 7 As shown, each lower electrode 61 has an elongated shape. A gap is formed between two adjacent lower electrodes 61 along their long sides. MR elements 50 are disposed near both ends of the upper surface of the lower electrodes 61 along their long sides. Furthermore, each upper electrode 62 has an elongated shape, and two adjacent MR elements 50 disposed on adjacent lower electrodes 61 along their long sides are electrically connected to each other.

[0074] Although not shown, one MR element 50 located at the end of a column of multiple MR elements 50 arranged in a row is connected to another MR element 50 located at the end of a column of multiple other MR elements 50 adjacent to each other in a direction intersecting the long side direction of the lower electrode 61. The two MR elements 50 are connected to each other using a specific electrode not shown. This specific electrode may also be an electrode that connects the lower surfaces or upper surfaces of the two MR elements 50 to each other.

[0075] exist Figure 7 When the MR element 50 shown is the first MR element 50B, Figure 7 The lower electrode 61 shown corresponds to the lower electrode 61B. Figure 7 The upper electrode 62 shown corresponds to the upper electrode 62B. Furthermore, in this case, the long side direction of the lower electrode 61 is parallel to the U direction.

[0076] Similarly, multiple second MR elements 50C are connected in series using multiple lower electrodes 61C and multiple upper electrodes 62C. The description of the connection method for the multiple first MR elements 50B described above also applies to the connection method for the multiple second MR elements 50C. Figure 7 When the MR element 50 shown is the second MR element 50C, Figure 7 The lower electrode 61 shown corresponds to the lower electrode 61C. Figure 7 The upper electrode 62 shown corresponds to the upper electrode 62C. Furthermore, in this case, the long side direction of the lower electrode 61 is parallel to the U direction.

[0077] Furthermore, in this embodiment, a laminated film comprising an antiferromagnetic layer 51, a magnetization fixing layer 52, a gap layer 53, and a free layer 54 is described as the MR element 50. However, an element comprising this laminated film, a lower electrode 61, and an upper electrode 62 may also be described as the MR element of this embodiment. The laminated film comprises multiple magnetic films. The lower electrode 61 is a non-magnetic metal layer disposed between the convex surface 305c and the multiple magnetic films. The MR element may also comprise multiple laminated films, multiple lower electrodes 61, and multiple upper electrodes 62.

[0078] Each of the multiple upper coil elements 82 extends in a direction parallel to the Y direction. Furthermore, the multiple upper coil elements 82 are arranged in a manner aligned in the X direction. In this embodiment, particularly when viewed from the Z direction, two upper coil elements 82 overlap with each of the multiple first MR elements 50B and the multiple second MR elements 50C.

[0079] Multiple lower coil elements 81 each extend in a direction parallel to the Y direction. Furthermore, the multiple lower coil elements 81 are arranged in a manner aligned in the X direction. The shape and arrangement of the multiple lower coil elements 81 may be the same as or different from the shape and arrangement of the multiple upper coil elements 82. Figure 5 and Figure 6 In the example shown, the X-direction dimension of each of the plurality of lower coil elements 81 is smaller than the X-direction dimension of each of the plurality of upper coil elements 82. Furthermore, the spacing between two adjacent lower coil elements 81 in the X-direction is smaller than the spacing between two adjacent upper coil elements 82 in the X-direction.

[0080] exist Figure 5 and Figure 6 In the example shown, multiple lower coil elements 81 and multiple upper coil elements 82 are electrically connected to form a coil 80 that applies a magnetic field parallel to the X-direction to the free layers 54 of each of the multiple first MR elements 50B and the multiple second MR elements 50C. Alternatively, the coil 80 may be configured to, for example, apply an X-direction magnetic field to the free layers 54 in the first and second resistor sections R21, R22 of the first detection circuit 20 and the first and second resistor sections R31, R32 of the second detection circuit 30, and apply a -X-direction magnetic field to the free layers 54 in the third and fourth resistor sections R23, R24 of the first detection circuit 20 and the third and fourth resistor sections R33, R34 of the second detection circuit 30. Furthermore, the coil 80 may also be controlled by the processor 40.

[0081] Next, the first and second detection signals will be explained. First, refer to... Figure 3The first detection signal will be explained. When the intensity of the component of the object's magnetic field parallel to the W1 direction changes, the resistance values ​​of the resistors R21 to R24 in the first detection circuit 20 change as follows: the resistance values ​​of resistors R21 and R23 increase while the resistance values ​​of resistors R22 and R24 decrease, or the resistance values ​​of resistors R21 and R23 decrease while the resistance values ​​of resistors R22 and R24 increase. Consequently, the potentials of the signal output terminals E21 and E22 change. The first detection circuit 20 is configured to generate a first detection signal S21 corresponding to the potential of the signal output terminal E21, and to generate a first detection signal S22 corresponding to the potential of the signal output terminal E22.

[0082] Next, refer to Figure 4 The second detection signal will be explained. When the intensity of the component of the object's magnetic field parallel to the W2 direction changes, the resistance values ​​of the resistors R31 to R34 in the second detection circuit 30 change as follows: the resistance values ​​of resistors R31 and R33 increase while the resistance values ​​of resistors R32 and R34 decrease, or the resistance values ​​of resistors R31 and R33 decrease while the resistance values ​​of resistors R32 and R34 increase. Consequently, the potentials of the signal output terminals E31 and E32 change. The second detection circuit 30 is configured to generate a second detection signal S31 corresponding to the potential of the signal output terminal E31, and to generate a second detection signal S32 corresponding to the potential of the signal output terminal E32.

[0083] Next, the operation of the processor 40 will be explained. The processor 40 is configured to generate a first detection value and a second detection value based on the first detection signals S21 and S22 and the second detection signals S31 and S32. The first detection value corresponds to the component of the object's magnetic field parallel to the V direction. The second detection value corresponds to the component of the object's magnetic field parallel to the Z direction. Hereinafter, the first detection value will be denoted by the symbol Sv, and the second detection value by the symbol Sz.

[0084] Processor 40 generates the first and second detection values ​​Sv and Sz as follows. Processor 40 first generates value S1 by performing an operation involving calculating the difference S21 - S22 between the first detection signal S21 and the first detection signal S22, and generates value S2 by performing an operation involving calculating the difference S31 - S32 between the second detection signal S31 and the second detection signal S32. Then, processor 40 calculates values ​​S3 and S4 using the following equations (1) and (2).

[0085] S3=(S2+S1) / (2cosα)…(1)

[0086] S4=(S2-S1) / (2sinα)…(2)

[0087] The first detection value Sv can be value S3 itself, or it can be a value to which a predetermined correction such as gain adjustment and offset adjustment has been applied to value S3. Similarly, the second detection value Sz can be value S4 itself, or it can be a value to which a predetermined correction such as gain adjustment and offset adjustment has been applied to value S4.

[0088] Next, the structural features of the magnetic sensor 1 according to this embodiment will be described. The magnetic sensor 1 includes a substrate 301 having an upper surface 301a, a support member disposed on the substrate 301, a first MR element 50B, and a second MR element 50C. In this embodiment, in particular, the insulating layer 305 corresponds to the support member. A plurality of lower coil elements 81 and insulating layers 302 to 304 are interposed between the substrate 301 and the insulating layer 305. The insulating layer 305 has a first inclined surface 305a and a second inclined surface 305b.

[0089] The first and second MR elements 50B and 50C each comprise at least two magnetic films, namely a magnetized fixed layer 52 and a free layer 54. The two magnetic films of the first MR element 50B constitute a part (main part) of the first MR element 50B. The two magnetic films of the second MR element 50C constitute a part (main part) of the second MR element 50C. Hereinafter, these two magnetic films are referred to as functional layers. The functional layer of the first MR element 50B is disposed on the first inclined surface 305a. The functional layer of the second MR element 50C is disposed on the second inclined surface 305b.

[0090] The first inclined surface 305a and the second inclined surface 305b face different directions. On a convex surface 305c, the first inclined surface 305a and the second inclined surface 305b can also be symmetrical about an imaginary UZ plane that is perpendicular to the upper surface 301a of the substrate 301.

[0091] From the viewpoint of making the magnetic sensor 1 thinner, the dimensions of the first inclined surface 305a and the second inclined surface 305b in the direction perpendicular to the upper surface 301a of the substrate 301, that is, in the direction parallel to the Z direction, are preferably in the range of 1.4 μm to 3.0 μm.

[0092] The insulating layer 305 has a convex surface 305c. The convex surface 305c extends in a direction away from the upper surface 301a of the substrate 301. At least a portion of the convex surface 305c is inclined relative to the upper surface 301a of the substrate 301. In this embodiment, in particular, the convex surface 305c includes a first inclined surface 305a and a second inclined surface 305b.

[0093] The dimension of the convex surface 305c in the direction perpendicular to the upper surface 301a of the substrate 301, i.e., in the direction parallel to the Z direction, is the same as the dimensions of the first and second inclined surfaces 305a and 305b in the direction parallel to the Z direction. That is, the dimension of the convex surface 305c in the direction parallel to the Z direction is preferably in the range of 1.4 μm to 3.0 μm. In addition, the dimension of the convex surface 305c in the direction parallel to the V direction is preferably, for example, 3 μm to 16 μm.

[0094] The insulating layer 305 includes a flat portion 32 and a plurality of protrusions 31. Hereinafter, the shape of the protrusion 31 will be described in detail with regard to one of the protrusions 31. Figure 8 This is a top view showing the supporting component, namely the insulating layer 305.

[0095] The protrusion 31 extends along the U direction, parallel to the upper surface 301a of the substrate 301, and has an end portion 31a located in the U direction and an end portion 31b located in the -U direction. Figure 8 As shown, when viewed from the Z direction, the shapes of ends 31a and 31b are periodic sawtooth shapes and have concave and convex shapes. The shapes of ends 31a and 31b will be explained in detail later.

[0096] The protrusion 31 includes a first portion 311, a second portion 312 positioned forward of the first portion 311 in the U direction, and a third portion 313 positioned forward of the first portion 311 in the -U direction. Figure 8 In the diagram, the boundaries of the first part 311 and the second part 312, as well as the boundaries of the first part 311 and the third part 313, are indicated by dashed lines. The second part 312 includes end 31a. The third part 313 includes end 31b.

[0097] The first part 311 is the main part of the protrusion 31. Although not shown, the first part 311 has functional layers (magnetization fixing layer 52 and free layer 54) of the first and second MR elements 50B and 50C respectively disposed on the first part 311. On the other hand, the functional layers may not be disposed on the second and third parts 312 and 313.

[0098] The lower electrode 61, the upper electrode 62, and the aforementioned specific electrodes (not shown) may or may not be disposed on the second and third portions 312 and 313. Similarly, the upper coil element 82 may or may not be disposed on the second and third portions 312 and 313.

[0099] Figure 9 This is a cross-sectional view showing the first part 311 and the second part 312. Figure 9In the diagram, the boundaries of the protrusion 31 and the flat portion 32, as well as the boundaries of the first portion 311 and the second portion 312, are indicated by dashed lines. The maximum dimension (maximum thickness) of the first portion 311 in the Z direction is constant or approximately constant. Furthermore, in any cross-section intersecting the protrusion 31 and parallel to the UZ plane, the dimension (thickness) of the first portion 311 in the Z direction is constant or approximately constant.

[0100] The dimension (thickness) of the second portion 312 in the Z direction decreases as it moves away from the first portion 311. That is, the maximum dimension (maximum thickness) of the second portion 312 in the Z direction also decreases as it moves away from the first portion 311. Furthermore, in any cross-section that intersects the protrusion 31 and is parallel to the UZ plane, the dimension of the second portion 312 in the Z direction also decreases as it moves away from the first portion 311.

[0101] Furthermore, the dimension of the second portion 312 in the Z direction can also be less than or equal to the dimension of the first portion 311 in the Z direction. That is, the maximum dimension (maximum thickness) of the second portion 312 in the Z direction can also be less than or equal to the maximum dimension (maximum thickness) of the first portion 311 in the Z direction. Additionally, in any cross-section intersecting the protrusion 31 and parallel to the UZ plane, the dimension (thickness) of the second portion 312 in the Z direction can also be less than or equal to the dimension (thickness) of the first portion 311 in the Z direction.

[0102] The description of the dimensions of Part 2 312 also applies to Part 3 313. If Part 2 312 in the description of the dimensions of Part 2 312 is replaced with Part 3 313, it becomes a description of the dimensions of Part 3 313.

[0103] In addition, the second part 312 and the third part 313 may have a shape that is symmetrical with respect to the VZ plane that intersects the center of the long side direction of the protrusion 31, or they may not have a symmetrical shape.

[0104] Next, refer to Figure 11 and Figure 12 The shape of the end portion 31a of the protrusion 31 is described in detail. Figure 11 It is a top view showing multiple recesses. Figure 12 It means Figure 11 A top view of one of the multiple recesses shown.

[0105] like Figure 11As shown, the protrusion 31 includes a plurality of recesses 31a1, each recessed in a direction parallel to the upper surface 301a of the substrate 301, at its U-direction end. Figure 11 In the example shown, each of the multiple recesses 31a1 is recessed in the -U direction. Additionally, the second portion 312 includes multiple recesses 31a1.

[0106] Here, the portion located between two adjacent concave portions 31a1 is referred to as the convex portion 31a2. For example... Figure 11 As shown, the protrusion 31 includes a plurality of protrusions 31a2. The protrusions 31a2 have a shape that protrudes in a direction parallel to the upper surface 301a of the substrate 301. Figure 11 In the example shown, multiple protrusions 31a2 each protrude in the U direction. The end portion 31a of the protrusion 31 is composed of multiple recesses 31a1 and multiple protrusions 31a2. By alternating the recesses 31a1 and protrusions 31a2, the shape of the end portion 31a when viewed from the Z direction becomes a periodic sawtooth shape.

[0107] like Figure 12 As shown, the recess 31a1 has two opposing sidewalls SW1 and SW2. The distance D1 between the two sidewalls SW1 and SW2 can also increase along the U direction (as it moves away from the first portion 311). That is, the size of the recess 31a1 in the direction parallel to the V direction can also increase along the U direction (as it moves away from the first portion 311).

[0108] Although not shown in the figure, the recess 31a1 may also have two other sidewalls facing each other. The spacing between the other two sidewalls may be constant regardless of their distance from the first part 311. The other two sidewalls may also be located in front of the two sidewalls SW1 and SW2 in the U direction.

[0109] Furthermore, the protrusion 31a2 substantially has a sidewall SW1 on one side of two adjacent recesses 31a1 and a sidewall SW2 on the other side of two adjacent recesses 31a1. The distance D2 between the sidewalls SW1 and SW2 decreases along the U direction (as it moves away from the first portion 311). That is, the size of the protrusion 31a2 in the direction parallel to the V direction decreases along the U direction (as it moves away from the first portion 311).

[0110] In addition, such as Figure 11 As shown, multiple recesses 31a1 are arranged along a direction intersecting the U direction. Figure 11 In the example shown, in particular, multiple recesses 31a1 are arranged along a V direction orthogonal to the U direction. The multiple recesses 31a1 include two specific recesses 31a1 located at both ends in a direction parallel to the V direction. Figure 11 In the example shown, each of the two specific recesses 31a1 has Figure 12 The two sidewalls shown are SW1 and SW2.

[0111] Here, Figure 12 A certain value of the interval D1 shown is defined as the width of the recess 31a1. Additionally, Figure 12 A certain value of the interval D2 shown is defined as the interval between two adjacent recesses 31a1. For example, the average value of interval D1 can be set as the width of recess 31a1, and the average value of interval D2 can be set as the interval between two adjacent recesses 31a1. Alternatively, the intervals D1 and D2 in the VZ section intersecting the center of the recesses 31a1 in the direction parallel to the U direction can be set as the width of recess 31a1 and the interval between two adjacent recesses 31a1, respectively. In this embodiment, the interval between two adjacent recesses 31a1 is greater than the width of recess 31a1. Furthermore, the interval between two adjacent recesses 31a1 is also substantially the width of convex portion 31a2. Therefore, in this embodiment, the width of convex portion 31a2 is greater than the width of recess 31a1.

[0112] In addition, Figure 8 For ease of understanding, the example shown illustrates how the multiple ends 31a of the multiple protrusions 31 are arranged along the V direction. That is, the multiple ends 31a are positioned at the same location in a direction parallel to the U direction. However, the multiple ends 31a may not be arranged along the V direction.

[0113] Here, refer to Figure 13 and Figure 14 The first and second variations are described in which the multiple ends 31a are not arranged along the V direction. Figure 13 This is a top view showing a first modified example of the arrangement of the plurality of ends 31a. In the first modified example, the plurality of ends 31a are arranged along the Y direction. That is, the plurality of ends 31a are arranged at the same position in a direction parallel to the X direction.

[0114] Furthermore, in the first modified example, in each of the plurality of protrusions 31, the plurality of recesses 31a1 can be arranged along a direction orthogonal to the U direction, or along a direction intersecting the U direction at an angle other than 90°. Figure 13 In the example shown, multiple recesses 31a1 are arranged along the Y direction.

[0115] Additionally, as described above, the plurality of upper coil elements 82 extend in a direction parallel to the Y direction. In a first variation, the plurality of upper coil elements 82 may also include upper coil elements 82 disposed on the plurality of ends 31a or the plurality of second portions 312.

[0116] Figure 14This is a top view showing a second variation of the arrangement of the plurality of ends 31a. In the second variation, the plurality of ends 31a are arranged along the X direction. That is, the plurality of ends 31a are arranged at the same position in a direction parallel to the Y direction.

[0117] Furthermore, in the second modification, similar to the first modification, in each of the plurality of protrusions 31, the plurality of recesses 31a1 can be arranged along a direction orthogonal to the U direction, or along a direction intersecting the U direction at an angle other than 90°. Figure 14 In the example shown, multiple recesses 31a1 are arranged along the V direction.

[0118] In a second variation, the plurality of upper coil elements 82 may include upper coil elements disposed on one end 31a or one second portion 312, or may include upper coil elements disposed on two or more ends 31a or two or more second portions 312. Furthermore, each of the plurality of upper coil elements 82 may be electrically connected to the plurality of lower coil elements 81 at a forward position relative to the plurality of ends 31a of the plurality of protrusions 31 in the Y direction.

[0119] Up to this point, the shape of the end portion 31a of the protrusion 31 has been described. The shape of the end portion 31b of the protrusion 31 is the same as that of the end portion 31a. That is, the protrusion 31 includes a plurality of recesses on the end portion of the protrusion 31 in the U direction, which are recessed in a direction parallel to the upper surface 301a of the substrate 301. The third part 313 includes the aforementioned plurality of recesses. The end portion 31b of the protrusion 31 is composed of the aforementioned plurality of recesses and a plurality of protrusions located between two adjacent recesses. By alternating the recesses and protrusions, the shape of the end portion 31b when viewed from the Z direction becomes a periodic sawtooth shape.

[0120] The ends 31a and 31b of the protrusion 31 may also have a shape symmetrical with respect to the VZ plane that intersects the center of the long side of the protrusion 31. In this case, each of the aforementioned recesses is recessed in the U direction.

[0121] The description of the shape of the plurality of recesses 31a1 also applies substantially to the plurality of recesses constituting the end portion 31b of the protrusion 31. Furthermore, the description of the arrangement of the plurality of ends 31a also applies substantially to the plurality of ends 31b.

[0122] Next, the function and effects of the magnetic sensor 1 in this embodiment will be explained. In this embodiment, first and second MR elements 50B and 50C, lower electrodes 61B and 61C, and upper electrodes 62B and 62C (hereinafter referred to as MR elements 50, etc.) are formed on the protrusion 31 of the insulating layer 305. The MR elements 50, etc., are formed by etching the etched film using photolithography. Therefore, during the manufacturing process of the magnetic sensor 1, a photoresist mask with a predetermined planar shape is formed on the protrusion 31.

[0123] Here, it is considered that a photoresist mask is formed near the end 31a of the protrusion 31. When the end 31a has a smooth shape, the photoresist used to form the photoresist mask will flow, resulting in the inability to form the photoresist mask with high precision.

[0124] In contrast, in this embodiment, the protrusion 31 includes a plurality of recesses 31a1 constituting the end portion 31a. According to this embodiment, by setting the shape of the end portion 31a of the protrusion 31 to have an uneven shape, the flow of photoresist can be suppressed, and a photoresist mask can be formed with high precision. As a result, according to this embodiment, the shape accuracy of MR elements 50 and the like formed near the end portion 31a of the protrusion 31 can be improved.

[0125] Similarly, in this embodiment, the protrusion 31 includes a plurality of recesses constituting the end portion 31b. According to this embodiment, for the same reasons as described above, the shape accuracy of the MR element 50 and the like formed near the end portion 31b of the protrusion 31 can be improved.

[0126] Furthermore, in this embodiment, the size of the second portion 312 in the Z direction decreases as it moves away from the first portion 311. In particular, the size of the second portion 312 in the Z direction is smaller than or equal to the size of the first portion 311 in the Z direction. That is, in this embodiment, the protrusion 31 does not bulge from the first portion 311 to the second portion 312. Therefore, according to this embodiment, the shape accuracy of the MR element 50 and the like formed near the boundary between the first portion 311 and the second portion 312 can be improved. In addition, according to this embodiment, shape disintegration of the upper coil element 82 formed near the boundary between the first portion 311 and the second portion 312 can be suppressed.

[0127] Similarly, in this embodiment, the size of the third portion 313 in the Z direction decreases as it moves away from the first portion 311. In particular, the size of the third portion 313 in the Z direction is smaller than or equal to the size of the first portion 311 in the Z direction. According to this embodiment, for the same reasons as described above, the shape accuracy of the MR element 50 and the like formed near the boundary between the first portion 311 and the third portion 313 can be improved, and shape deterioration of the upper coil element 82 formed near the boundary between the first portion 311 and the third portion 313 can be suppressed.

[0128] Next, other effects of this embodiment will be explained. In this embodiment, the size of the convex surface 305c in the direction parallel to the Z direction is preferably in the range of 1.4 μm to 3.0 μm. According to the exemplary embodiment, by setting the size of the convex surface 305c to 1.4 μm or more, the tilt of each of the first tilted surface 305a and the second tilted surface 305b can be increased, thereby improving the sensitivity of the magnetic sensor 1 relative to the component of the object magnetic field in the direction parallel to the Z direction. As a result, according to the exemplary embodiment, the second detection value Sz can be generated with high precision. In addition, according to the exemplary embodiment, by setting the size of the convex surface 305c to 3.0 μm or less, a photoresist mask composed of a photoresist layer can be formed with high precision on the first tilted surface 305a and the second tilted surface 305b during the manufacturing process of the magnetic sensor 1.

[0129] [Variation Example]

[0130] Next, refer to Figure 15 A modified example of the end portion 31a of the protrusion 31 will be described. Figure 15 This is a top view showing a modified example of end portion 31a. In the modified example, the plurality of recesses 31a1 include two specific recesses 31a1 located at both ends in a direction parallel to the V direction. The plurality of recesses 31a1 other than the two specific recesses 31a1 have a reference... Figure 12 The two sidewalls SW1 and SW2 are described. On the other hand, each of the two specific recesses 31a1 has only one sidewall, which corresponds to sidewall SW1 or sidewall SW2.

[0131] [Second Implementation]

[0132] Next, refer to Figure 16 The second embodiment of the present invention will be described. Figure 16 This is a top view showing the multiple recesses in this embodiment.

[0133] In this embodiment, the spacing between two adjacent recesses 31a1 (e.g., Figure 12 The average value of the interval D2 shown) is the width of the recess 31a1 (e.g., Figure 12 The average value of the interval D1 shown is below. Figure 16 In the example shown, the distance between two adjacent recesses 31a1 is less than the width of the recess 31a1. That is, in this embodiment, the width of the protrusion 31a2 is less than the width of the recess 31a1.

[0134] The other structures, functions, and effects of this embodiment are the same as those of the first embodiment.

[0135] Furthermore, the present invention is not limited to the embodiments described above, and various modifications can be made. For example, the magnetic detection element is not limited to MR elements, but can also be a Hall element or other magnetic field detection element besides MR elements.

[0136] Additionally, the magnetic sensor 1 may also include a third detection circuit configured to detect a component of the object's magnetic field in a direction parallel to the XY plane and generate at least one third detection signal corresponding to that component. In this case, the processor 40 may also be configured to generate a detection value corresponding to the component of the object's magnetic field in a direction parallel to the U direction based on at least one third detection signal. The third detection circuit may be integrated with the first and second detection circuits 20 and 30, or it may be contained in a different chip than the first and second detection circuits 20 and 30.

[0137] Furthermore, the sensor element of the present invention is not limited to a magnetic detection element, but can also be a sensor element configured such that its physical properties change according to a predetermined physical quantity. The predetermined physical quantity is not limited to a magnetic field, but can include quantities representing the state of any physical phenomenon that can be detected by the sensor element, such as electric fields, temperature, displacement, and force. If the magnetic detection element is replaced with a sensor element, the above description of the embodiments also applies to sensors other than magnetic sensors that have sensor elements other than magnetic detection elements. In this case, the functional layer can also be at least a portion constituting the sensor element, i.e., the portion whose physical properties change according to the predetermined physical quantity. Additionally, in this case, the metal layer can also be any wiring layer.

[0138] As described above, the sensor of the present invention is a sensor configured to detect a predetermined physical quantity. The sensor of the present invention includes a substrate having an upper surface, a support member disposed on the substrate, and a sensor element configured such that its physical properties vary according to the predetermined physical quantity. The support member includes a flat portion having a flat surface parallel to the upper surface of the substrate and at least one protrusion having a shape protruding from the flat surface. The at least one protrusion has an inclined surface inclined relative to the upper surface of the substrate. The sensor element includes a functional layer constituting at least a portion of the sensor element. The functional layer is disposed on the inclined surface. The at least one protrusion extends along a first direction parallel to the upper surface of the substrate and includes a plurality of recesses at the end of the at least one protrusion in the first direction that are recessed in a direction parallel to the upper surface of the substrate.

[0139] In the sensor of the present invention, at least one protrusion may also include a first portion and a second portion located in front of the first portion in a first direction and including a plurality of recesses. The size of the second portion in a second direction perpendicular to the upper surface of the substrate may also decrease as it moves away from the first portion. The size of the second portion in the second direction may also be smaller than the size of the first portion in the second direction. A functional layer may also be disposed on the first portion.

[0140] Furthermore, in the sensor of the present invention, at least a portion of the plurality of recesses may also have two opposing sidewalls. The spacing between the two sidewalls may also increase along the first direction. The plurality of recesses may also include two specific recesses arranged along a third direction parallel to the upper surface of the substrate and intersecting the first direction, and located at both ends in a direction parallel to the third direction. Each of the two specific recesses may also have two sidewalls. The spacing between two adjacent recesses in the plurality of recesses may be greater than or less than the width of each of the plurality of recesses.

[0141] Furthermore, in the sensor of the present invention, the plurality of recesses may also be arranged along a direction parallel to the upper surface of the substrate and orthogonal to the first direction. Alternatively, the plurality of recesses may also be arranged along a direction parallel to the upper surface of the substrate and intersecting the first direction at an angle other than 90°.

[0142] In addition, in the sensor of the present invention, at least one protrusion may also be multiple protrusions.

[0143] Furthermore, in the sensor of the present invention, the defined physical quantity may also be at least one of the direction and intensity of the external magnetic field. The sensor element may also be a magnetic detection element configured to detect changes in at least one of the direction and intensity of the external magnetic field. The magnetic detection element may also be a magnetoresistive element. The functional layer may also include multiple magnetic films. The magnetoresistive element may also further include a non-magnetic metal layer disposed between the inclined surface and the multiple magnetic films.

[0144] Based on the above description, it can be seen that various methods and variations of the present invention can be implemented. Therefore, within the equivalent scope of the claims, the present invention can be implemented even in ways other than the preferred methods described above.

Claims

1. A sensor, characterized in that, It is a sensor constructed by detecting specified physical quantities. have: A substrate having an upper surface; A support component disposed on the substrate; The sensor element is configured such that its physical properties change according to the specified physical quantity. The support member includes a flat portion having a flat surface parallel to the upper surface of the substrate, and at least one protrusion having a shape protruding from the flat surface. The at least one protrusion has an inclined surface that is inclined relative to the upper surface of the substrate. The sensor element includes a functional layer that constitutes at least a portion of the sensor element. The functional layer is disposed on the inclined surface. The at least one protrusion extends along a first direction parallel to the upper surface of the substrate, and includes a plurality of recesses at the end of the at least one protrusion in the first direction that are recessed in a direction parallel to the upper surface of the substrate.

2. The sensor according to claim 1, characterized in that, The at least one protrusion includes a first portion and a second portion located in front of the first portion in the first direction and including the plurality of recesses. The size of the second portion in a second direction perpendicular to the upper surface of the substrate decreases as it moves away from the first portion.

3. The sensor according to claim 2, characterized in that, The size of the second portion in the second direction is less than or equal to the size of the first portion in the second direction.

4. The sensor according to claim 2, characterized in that, The functional layer is configured above the first part.

5. The sensor according to claim 1, characterized in that, At least a portion of the plurality of recesses has two opposing sidewalls.

6. The sensor according to claim 5, characterized in that, The distance between the two sidewalls increases along the first direction.

7. The sensor according to claim 5, characterized in that, The plurality of recesses includes two specific recesses arranged along a third direction parallel to the upper surface of the substrate and intersecting the first direction, and located at both ends in a direction parallel to the third direction. Each of the two specific recesses has the two sidewalls.

8. The sensor according to claim 5, characterized in that, The interval between two adjacent recesses in the plurality of recesses is greater than the width of each of the plurality of recesses.

9. The sensor according to claim 5, characterized in that, The interval between two adjacent recesses in the plurality of recesses is less than the width of each of the plurality of recesses.

10. The sensor according to claim 1, characterized in that, The plurality of recesses are arranged along a direction parallel to the upper surface of the substrate and orthogonal to the first direction.

11. The sensor according to claim 1, characterized in that, The plurality of recesses are arranged along a direction parallel to the upper surface of the substrate and intersecting the first direction at an angle other than 90°.

12. The sensor according to claim 1, characterized in that, The at least one protrusion may be a plurality of protrusions.

13. The sensor according to claim 1, characterized in that, The specified physical quantity is at least one of the direction of the external magnetic field and the strength of the external magnetic field. The sensor element is a magnetic detection element configured to detect changes in at least one of the direction and intensity of the external magnetic field.

14. The sensor according to claim 13, characterized in that, The magnetic detection element is a magnetoresistive element. The functional layer contains multiple magnetic films.

15. The sensor according to claim 14, characterized in that, The magnetoresistive element further includes a non-magnetic metal layer disposed between the inclined surface and the plurality of magnetic films.

Images