Photon analog-to-digital conversion system and chip based on wavelength multiplexing and optical trapping

Abstract

A photonic analog-to-digital conversion system and chip based on wavelength multiplexing and optical capture, which utilizes a wavelength division multiplexer to combine N continuous lights of different wavelengths into one light, loads sampled analog signals on the N light paths, makes the analog signals on the light paths of different wavelengths obtain different time delay amounts through a time delay control module, the time delay amount difference of adjacent two light paths is equal, and the time domain discretization of N equal time interval analog signals is realized by using an optical capture module. The present application utilizes passive devices such as a wavelength division multiplexer, greatly reduces the number of active devices such as electro-optic modulators, can effectively reduce the chip complexity and link loss, and thus improves the performance of the photonic analog-to-digital conversion chip. The use of passive devices instead of active devices can effectively reduce the chip power consumption and improve the stability. The chip can increase the number of continuous laser light sources and the channel number of the wavelength division multiplexer / demultiplexer through simple configuration, and can multiply the sampling rate of the photonic analog-to-digital conversion chip, and has the ability of large-scale expansion.

Description

Technical Field

[0001] This invention relates to optoelectronic integration technology, specifically a photonic analog-to-digital conversion system and chip based on wavelength multiplexing and optical trapping. Background Technology

[0002] Information in nature is presented as continuously changing analog signals. Analog signals face challenges in transmission and processing, including susceptibility to distortion, poor interference resistance, and difficulties in storage and processing. Discretizing and digitizing analog signals can effectively solve these problems, leading to the digital age and the era of big data. Analog-to-digital converters (ADCs) are the core devices connecting analog and digital signals. With the advancement of the information society, humanity's demand for both the quantity and speed of information is increasing, and the performance of ADCs is continuously being upgraded.

[0003] Traditional analog-to-digital converters (ADCs) are designed and implemented based on electronic technology, i.e., electronic ADCs. However, electronic ADCs are limited by factors such as aperture jitter and relative blurring, making it difficult to achieve high effective bit sampling and quantization of high-frequency analog signals. Furthermore, the sampling rate of electronic ADCs is also limited by the limitations of high-speed clock generation technology, resulting in a "technical bottleneck." Photonic ADC technology, which combines microwave photonics technology, offers numerous advantages such as large bandwidth, interference resistance, and low jitter. It broadens the input bandwidth of ADCs, improves the sampling rate and effective bit count, and has become an important direction for the future development of ADCs.

[0004] Integration is a crucial means to improve the practicality of photonic analog-to-digital converters (ADCs). High-precision integration processes can improve the channel consistency and effective bit depth of ADCs, while miniaturization and weight reduction can broaden application scenarios and enhance the reliability and stability of photonic ADCs. Researchers have proposed numerous integration methods for photonic ADCs; however, most of these methods merely involve moving microwave photonic devices onto a single chip, making it difficult to achieve monolithic integration of the photonic ADC system. Furthermore, existing reported photonic ADC chips still employ discrete, large-volume mode-locked lasers as photonic sampling pulses [Mehta, N., et al., “An Optically Sampled ADC in 3D Integrated Silicon-Photonics / 65nm CMOS.” 2020 IEEE Symposium on VLSI Technology, 2020, 1-2.]. Furthermore, the performance of photonic analog-to-digital converter (A / D converter) chips is also affected by on-chip optical power loss. Due to the large insertion loss of the modulator, the optical link loss of a photonic A / D converter system with multiple modulators cascaded increases accordingly [Optical A / D converter based on modulator multi-channel demultiplexing, CN106990642B], resulting in lower received optical power from the photodetector and only achieving a low effective number of bits. Therefore, to maximize the practicality of photonic A / D converters, it is necessary to achieve a truly monolithically integrated photonic A / D converter, eliminate bulky mode-locked lasers, reduce on-chip optical power loss, and improve the conversion accuracy of the photonic A / D converter system. Summary of the Invention

[0005] The purpose of this invention is to provide a monolithically integrated solution for high precision, miniaturization, lightweight, high stability, and low power consumption in photonic analog-to-digital conversion (A / D) technology. A novel photonic A / D conversion system and chip based on wavelength multiplexing and optical trapping are proposed. This photonic A / D conversion chip utilizes a wavelength division multiplexer to combine N continuous light sources of different wavelengths into a single path. Simultaneously, sampled analog signals are loaded onto these N optical paths. A delay control module ensures that the analog signals on different wavelength paths have different delay amounts, with equal delay differences between adjacent paths. Furthermore, an optical trapping module discretizes the N equally timed analog signals in the time domain. This photonic A / D conversion chip flexibly utilizes passive components such as wavelength division multiplexers, significantly reducing the number of active components such as electro-optic modulators. This effectively reduces chip complexity and link loss, thereby improving the performance of the photonic A / D conversion chip. Simultaneously, replacing active components with passive components effectively reduces chip power consumption and improves stability. This chip can significantly increase the sampling rate of photonic analog-to-digital converters by simply configuring the number of continuous laser sources and wavelength division multiplexer / demultiplexer channels, thus enabling large-scale expansion. This invention replaces mode-locked lasers with continuous lasers and, combined with heterogeneous integration technology, provides a truly monolithic solution for high-speed, high-precision photonic analog-to-digital converters.

[0006] The technical solution of the present invention is as follows:

[0007] On one hand, the present invention provides a photonic analog-to-digital converter system based on wavelength multiplexing and optical trapping, comprising a light source array, a wavelength division multiplexer, a modulator, a delay control module, an optical trapping module, a wavelength division multiplexer, a photodetector array, and an electronic analog-to-digital converter array connected in sequence.

[0008] The light source array generates N continuous lasers with different wavelengths, which are combined into one by the wavelength division multiplexer. The sampled analog signal is modulated onto the continuous laser containing N wavelengths by the modulator. The continuous laser carrying the sampled analog signal passes through the delay control module, so that the analog signals on different wavelength optical paths obtain different delay amounts, and the delay difference between adjacent paths is equal. The optical capture module generates an optical sampling pulse sequence with an amplitude modulated by the sampled signal at a frequency of fs, thereby realizing the time-domain discretization processing of the sampled signals loaded with different wavelengths.

[0009] The wavelength division multiplexer described is a reverse wavelength division multiplexer that divides N signals of different wavelengths into N paths according to wavelength by synchronous optical capture and time-domain discreteness. The photodetector array converts the photoelectric signals into N electrical signals, which are then converted into N electrical digital signals by the electronic analog-to-digital converter array. The information of the original electrical analog signal can be obtained by reconstructing and interleaving the N electrical digital signals.

[0010] The optical acquisition module consists of a dual parallel modulator, a cascaded intensity modulator, a phase modulator, or an optical microcavity. The light source array consists of N continuous laser sources with different wavelengths. The delay control module consists of a delay wavelength demultiplexer, a delay line array, and a delay wavelength division multiplexer. The delay line array consists of N delay line units. The delay wavelength division multiplexer is a delay wavelength demultiplexer used in reverse. The photodetector array consists of N photodetectors. The electronic analog-to-digital converter array consists of N electronic analog-to-digital converters.

[0011] The connection method of each component is as follows: the N output terminals of the light source array are respectively connected to the N channel ports of the wavelength division multiplexer; the multiplexing output terminal of the wavelength division multiplexer is connected to the optical input terminal of the modulator; the sampled signal is input to the RF input terminal of the modulator; the output terminal of the modulator is connected to the input terminal of the delay wavelength division multiplexer in the delay control module; the N output terminals of the delay wavelength division multiplexer are connected to the input terminals of the N delay line units in the delay line array; the output terminals of the N delay line units are connected to the N input terminals of the delay wavelength division multiplexer; the output terminal of the delay wavelength division multiplexer is connected to the input terminal of the optical capture module; the output terminal of the optical capture module is connected to the input terminal of the wavelength division multiplexer; the N output terminals of the wavelength division multiplexer are connected to the N input terminals of the photodetector array; and the N output terminals of the photodetector array are respectively connected to the input terminals of the N electronic analog-to-digital converters, where N is a positive integer greater than or equal to 2.

[0012] On the other hand, the present invention also provides a chip containing the above-mentioned photonic analog-to-digital conversion system based on wavelength multiplexing and optical capture, characterized in that the light source array, wavelength division multiplexer, modulator, delay control module, optical capture module, wavelength division multiplexer, photodetector array and electronic analog-to-digital converter array are sequentially connected and integrated on a single chip using heterogeneous integration technology.

[0013] The light source array is realized on a silicon platform using heterogeneous integration technology with III-V group luminescent materials.

[0014] The modulator is an electro-optic intensity modulator, which uses the plasma dispersion effect or the electro-optic effect to change the transmittance of the modulator by changing the optical path difference between the upper and lower arms of the Mach-Zehnder interferometer, thereby modulating the intensity of the continuous laser and thus modulating the sampled signal onto the continuous laser.

[0015] The wavelength division multiplexer and wavelength demultiplexer can be implemented using cascaded Mach-Zehnder interferometers, arrayed waveguide gratings, or cascaded microring resonators.

[0016] The aforementioned time-delay wavelength demultiplexer and time-delay wavelength division multiplexer can be implemented using cascaded Mach-Zehnder interferometers, arrayed waveguide gratings, or cascaded microring resonators.

[0017] The optical delay line array is composed of optical delay lines of different physical lengths, which generate different delay amounts for optical signals of different wavelengths in different channels to adjust the delay.

[0018] The optical capture module is used to generate a sequence of optical sampling pulses whose amplitude is modulated by the sampled signal. It can be implemented using, but is not limited to, a dual parallel modulator, a cascaded phase modulator and intensity modulator, a cascaded intensity modulator, an optical microcavity, etc.

[0019] The photodetector array consists of N photodetectors used to convert optical signals into electrical signals. The photodetectors are implemented by epitaxially growing germanium or germanium-silicon material on silicon and fabricating vertical or horizontal pin junctions.

[0020] Compared with the prior art, the present invention has the following advantages:

[0021] 1. By using continuous laser instead of mode-locked laser as the light source for the photonic analog-to-digital converter chip, and combining it with heterogeneous integration technology, a photonic analog-to-digital converter chip that integrates all optoelectronic devices on a single chip can be truly realized. This significantly improves the integration level of the photonic analog-to-digital converter chip, reduces the chip size, and enhances the practicality and stability of the photonic analog-to-digital converter chip.

[0022] 2. The photonic analog-to-digital conversion method proposed in this invention significantly reduces the number of active devices such as electro-optic modulators in traditional photonic analog-to-digital conversion systems by combining passive devices such as continuous laser source arrays and wavelength division multiplexers. This effectively reduces chip complexity and link loss, thereby improving the performance of the photonic analog-to-digital conversion chip. Furthermore, replacing active devices with passive devices significantly reduces the heat generation of the photonic analog-to-digital conversion chip, effectively reducing chip power consumption and improving chip stability.

[0023] 3. In this invention, the optical acquisition module simultaneously discretizes multiple sampled signals in the time domain, which greatly improves the synchronicity of time domain discretization of each channel while increasing the chip sampling rate, thereby improving the conversion accuracy of the photonic analog-to-digital converter chip.

[0024] 4. By utilizing the high-precision characteristics of integrated circuit technology, the optical path length between each channel of the photonic analog-to-digital conversion system can be strictly controlled, which greatly reduces channel mismatch caused by inconsistencies in optical path length between channels and improves the conversion accuracy of the photonic analog-to-digital conversion chip.

[0025] 5. The photonic analog-to-digital conversion system proposed in this invention is based on a continuous laser source array and wavelength multiplexing method. It can increase the sampling rate of the photonic analog-to-digital conversion chip by simply increasing the number of continuous laser sources and the number of channels of the wavelength division multiplexer / demultiplexer in the source array. This can be achieved by multiplying the sampling rate of the single channel of the back-end electronic analog-to-digital converter while keeping the sampling rate of the back-end electronic analog-to-digital converter fixed. It also has the ability to be easily scaled up on a large scale. Attached Figure Description

[0026] Figure 1 This is a schematic diagram of the photonic analog-to-digital converter chip structure based on wavelength multiplexing and optical capture of the present invention, wherein (a) is the overall architecture diagram and (b) is the architecture diagram of the delay control module.

[0027] Figure 2 This is a schematic diagram illustrating the application of heterogeneous integration to directly bond III-V group materials onto a silicon wafer.

[0028] Figure 3 The diagrams show three wavelength division multiplexer (WDM) architectures, where the WDM is used in reverse. Specifically, (a) is a WDM and WDM based on a cascaded Mach-Zehnder interferometer; (b) is a WDM and WDM based on an arbitrary waveguide grating; and (c) is a WDM and WDM based on a cascaded microring resonator.

[0029] Figure 4 The diagram shows a modulator embodiment, where (a) is a Mach-Zehnder intensity modulator architecture diagram, (b) is a phase modulation structure diagram of the upper and lower arms of the Mach-Zehnder intensity modulator, and (c) is a schematic diagram of a PN junction formed by ridge waveguide doping.

[0030] Figure 5 The diagram shows the architecture of an optical capture module embodiment, where (a) is the architecture of an optical capture module embodiment with a cascaded intensity modulator and a phase modulator, and (b) is the architecture of an optical capture module embodiment with dual parallel modulators. Detailed Implementation

[0031] A specific embodiment of this invention is given below with reference to the accompanying drawings. This embodiment is implemented based on the technical solution of this invention, and provides detailed implementation methods and processes, but the scope of protection of this invention is not limited to the following embodiment.

[0032] Please see Figure 1 , Figure 1 This is a schematic diagram of the structure of a photonic analog-to-digital converter chip based on wavelength multiplexing and optical trapping according to an embodiment of the present invention. As shown in the diagram, its architecture consists of a light source array 1, a wavelength division multiplexer 2, a modulator 3, a delay control module 4, an optical trapping module 5, a wavelength demultiplexer 6, a photodetector array 7, and an electronic analog-to-digital converter array 8. The light source array 1 consists of N continuous laser light sources 1-1 with different wavelengths. The wavelength division multiplexer 2 consists of cascaded Mach-Zehnder interferometers, arrayed waveguide gratings, or cascaded microring resonators. The wavelength demultiplexer 6 is a reverse-function wavelength division multiplexer 2, such as... Figure 1(b) The delay control module 4 is composed of a delay wavelength demultiplexer 4-1, a delay line array 4-2, and a delay wavelength division multiplexer 4-3. The delay line array 4-2 is composed of N delay line units 4-2-1. The delay wavelength demultiplexer 4-1 is composed of a cascaded Mach-Zehnder interferometer, an arrayed waveguide grating, or a cascaded microring resonator. The delay wavelength division multiplexer 4-3 is a delay wavelength demultiplexer 4-1 used in reverse. The optical capture module 5 is composed of a dual parallel modulator, or a cascaded intensity modulator / phase modulator, or an optical microcavity. The photodetector array 7 is composed of N germanium diodes grown on silicon and formed by doping. The electronic analog-to-digital converter array 8 is composed of N electronic analog-to-digital converters. The connection method of each component is as follows: the N output terminals of the light source array 1 are respectively connected to the N channel ports of the wavelength division multiplexer 2; the multiplexing output terminal of the wavelength division multiplexer 2 is connected to the optical input terminal of the modulator 3; the sampled signal is input to the RF input terminal of the modulator 3; the output terminal of the modulator 3 is connected to the input terminal of the delay wavelength division multiplexer 4-1 in the delay control module 4; the N output terminals of the delay wavelength division multiplexer 4-1 are connected to the input terminals of the N delay line units 4-2-1 in the delay line array 4-2; the N delay line units 4-2-1... The output of -2-1 is connected to the N inputs of the time-delay wavelength division multiplexer 4-3. The output of the time-delay wavelength division multiplexer 4-3 is connected to the input of the optical acquisition module 5. The output of the optical acquisition module 5 is connected to the input of the wavelength division multiplexer 6. The N outputs of the wavelength division multiplexer 6 are connected to the N inputs of the photodetector array 7. The N outputs of the photodetector array 7 are respectively connected to the inputs of the N electronic analog-to-digital converters in the electronic analog-to-digital converter array 8, where N is a positive integer greater than or equal to 2.

[0033] The light source array 1 generates N continuous lasers with different wavelengths, which are combined into one by the wavelength division multiplexer 2 and input into the modulator 3. The sampled signal is modulated by the modulator 3 onto a continuous laser containing N wavelengths. The continuous laser carrying the sampled signal enters the delay control module 4, where it is decomposed into N optical signals by the delay wavelength division multiplexer 4-1. The N delay line units 4-2-1 control the N optical signals to be delayed by different delay amounts, with a relative delay between adjacent channels of 1 / Nfs. After the delay, the optical signals are combined by the delay wavelength division multiplexer 4-3 and output to the optical capture module 5. The optical capture module 5 generates a sequence of optical sampling pulses with amplitude modulated by the sampled signal at a frequency of fs, thereby realizing the time-domain discretization of the sampled signal loaded with different wavelengths. The time-domain discretized optical signal is divided into N paths according to wavelength by wave demultiplexer 6. The N signals with different wavelengths are sampled by synchronous pulses and then divided into N paths again. The N paths are converted into N electrical signals by photodetector array 7. The N paths are then converted into N digital signals by N electronic analog-to-digital converters. The information of the original analog signal can be obtained by reconstructing and interleaving the N digital signals.

[0034] The aforementioned light source array 1 integrates a photonic analog-to-digital converter chip by bonding III-V group materials onto a silicon wafer using a heterogeneous integration method. Bonding techniques include, but are not limited to, direct bonding, eutectic bonding, anodic bonding, thermo-press bonding, and ultrasonic bonding. A specific implementation method for direct bonding technology is provided below: Figure 2 As shown, after cleaning, oxygen plasma treatment, wet wafer surface treatment and direct bonding, annealing at 250-300℃ and 1MPa pressure, and etching to remove the InP substrate, silicon and III-V form strong covalent bonds with each other and are bonded together by van der Waals forces or hydrogen bonds. This allows for monolithic integration of the light source array 1 and other photonic analog-to-digital conversion chip microwave photonic devices.

[0035] The wavelength division multiplexer 2, time-delay wavelength division multiplexer 4-3, and wavelength demultiplexer 6 and time-delay wavelength demultiplexer 4-1 are used to combine and demultiplex lasers of different wavelengths. Wavelength division multiplexer 2 and time-delay wavelength division multiplexer 4-3 are used in reverse configurations of wavelength demultiplexer 6 and time-delay wavelength demultiplexer 4-1. Their structure includes, but is not limited to, a wavelength division multiplexer with a cascaded Mach-Zehnder interferometer. Figure 3 (a) Wavelength division multiplexer of arbitrary waveguide gratings ( Figure 3 (b) and wavelength division multiplexer based on microring resonator cascade ( Figure 3 (c)

[0036] The modulator 3 is a silicon-based Mach-Zehnder intensity modulator ( Figure 4 The structure is composed of (a) and phase modulators are added to the upper and lower arms of the Mach-Zehnder interferometer. Figure 4 In (b), a PIN junction is formed by doping the ridge waveguide. Figure 4 In (c), the carrier dispersion effect is used to adjust the refractive index of the upper and lower arms to affect the optical path difference, thereby changing the transmittance of the modulator and thus modulating the intensity of the light.

[0037] The delay line array 4-2 is composed of delay lines of different physical lengths, which generate different delay amounts for optical signals of different wavelengths in different channels to adjust the delay.

[0038] The optical acquisition module 5 is used to generate a sequence of light sampling pulses whose amplitude is modulated by the sampled signal. This can be achieved, but is not limited to, cascaded phase modulators and intensity modulators. Figure 5 (a) or dual parallel modulator ( Figure 5 (b) etc.

[0039] The photodetector array 7 consists of N photodetectors used to convert optical signals into electrical signals. The photodetectors are implemented by epitaxially growing germanium or germanium-silicon material on silicon and fabricating vertical or horizontal pin junctions.

[0040] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit it. Although the present invention has been described in detail with reference to preferred embodiments, those skilled in the art should understand that modifications or equivalent substitutions can be made to the technical solutions of the invention without departing from the spirit and scope of the technical solutions of the present invention, and all such modifications or substitutions should be covered within the scope of the claims of the present invention.

Claims

1. A photon analog-to-digital conversion system based on wavelength multiplexing and optical trapping, characterized in that, It includes a light source array (1), wavelength division multiplexer (2), modulator (3), delay control module (4), optical capture module (5), wavelength division multiplexer (6), photodetector array (7) and electronic analog-to-digital converter array (8) connected in sequence. The light source array (1) generates N continuous lasers with different wavelengths, which are combined into one by the wavelength division multiplexer (2). The sampled analog signal is modulated onto a continuous laser containing N wavelengths by the modulator (3). The continuous laser loaded with the sampled analog signal passes through the delay control module (4) so ​​that the analog signals on different wavelength optical paths obtain different delay amounts, and the delay difference between adjacent paths is equal. The optical capture module (5) generates an optical sampling pulse sequence with an amplitude modulated by the sampled signal at a frequency of fs, thereby realizing the time-domain discretization processing of the sampled signal loaded with different wavelengths. The wavelength division multiplexer (6) is a wavelength division multiplexer (2) used in reverse. It divides N signals of different wavelengths into N paths according to wavelength by synchronous optical capture and time-domain discreteness. The photodetector array (7) converts the photoelectric signal into N electrical signals, and then the electronic analog-to-digital converter array (8) converts them into N electrical digital signals. The information of the original electrical analog signal can be obtained by reconstructing and interleaving the N electrical digital signals. The optical capture module (5) is composed of a dual parallel modulator, or a cascaded intensity modulator, phase modulator, or optical microcavity. The light source array (1) is composed of N continuous laser light sources with different wavelengths. The delay control module (4) is composed of a delay wavelength demultiplexer (4-1), a delay line array (4-2), and a delay wavelength division multiplexer (4-3). The delay line array is composed of N delay line units (4-2-1). The delay wavelength division multiplexer (4-3) is a delay wavelength demultiplexer (4-1) used in reverse. The photodetector array (7) is composed of N photodetectors. The electronic analog-to-digital converter array is composed of N electronic analog-to-digital converters. The connection method of each component is as follows: the N output terminals of the light source array (1) are respectively connected to the N channel ports of the wavelength division multiplexer (2), the multiplexing output terminal of the wavelength division multiplexer (2) is connected to the optical input terminal of the modulator (3), the sampled signal is input to the RF input terminal of the modulator (3), the output terminal of the modulator (3) is connected to the input terminal of the delay wavelength demultiplexer (4-1) in the delay control module (4), the N output terminals of the delay wavelength demultiplexer (4-1) are connected to the input terminals of the N delay line units (4-2-1) in the delay line array (4-2), and the N delay line units... The output of (4-2-1) is connected to the N inputs of the time-delay wavelength division multiplexer (4-3). The output of the time-delay wavelength division multiplexer (4-3) is connected to the input of the optical acquisition module (5). The output of the optical acquisition module (5) is connected to the input of the wavelength division multiplexer (6). The N outputs of the wavelength division multiplexer (6) are connected to the N inputs of the photodetector array (7). The N outputs of the photodetector array (7) are connected to the inputs of the N electronic analog-to-digital converters in the electronic analog-to-digital converter array (8), where N is a positive integer greater than or equal to 2.

2. A photonic analog-to-digital converter chip, comprising the photonic analog-to-digital converter system based on wavelength multiplexing and optical trapping as described in claim 1, characterized in that, The light source array (1), wavelength division multiplexer (2), modulator (3), delay control module (4), optical capture module (5), wavelength division multiplexer (6), photodetector array (7) and electronic analog-to-digital converter array (8) are sequentially integrated on a single chip using heterogeneous integration technology.

3. The photonic analog-to-digital converter chip according to claim 2, characterized in that, The light source array (1) is monolithically integrated by bonding III-V group materials onto a silicon wafer using a heterogeneous integration method.

4. The photonic analog-to-digital converter chip according to claim 2, characterized in that, The modulator (3) is an electro-optic intensity modulator. It uses the plasma dispersion effect or electro-optic effect to change the transmittance of the modulator by changing the optical path difference between the upper and lower arms of the Mach-Zehnder interferometer, thereby modulating the sampled signal onto the continuous laser.

5. The photonic analog-to-digital converter chip according to claim 2, characterized in that, The wavelength division multiplexer (2) and the wavelength demultiplexer (6) are wavelength division multiplexers and wavelength demultiplexers based on cascaded Mach-Zehnder interferometers, wavelength division multiplexers and wavelength demultiplexers based on arbitrary waveguide gratings, or wavelength division multiplexers and wavelength demultiplexers based on cascaded microring resonators.

6. The photonic analog-to-digital converter chip according to claim 2, characterized in that, The time-delayed wavelength division multiplexer (4-1) and time-delayed wavelength division multiplexer (4-3) are wavelength division multiplexers and wavelength division multiplexers based on cascaded Mach-Zehnder interferometers, wavelength division multiplexers and wavelength division multiplexers based on arbitrary waveguide gratings, or wavelength division multiplexers and wavelength division multiplexers based on cascaded microring resonators.

7. The photonic analog-to-digital converter chip according to claim 2, characterized in that, The delay line array (4-2) consists of N optical delay lines (4-2-1) of different physical lengths, which generate different delay amounts for optical signals of different wavelengths in different channels to adjust the delay.

8. The photonic analog-to-digital converter chip according to claim 2, characterized in that, The optical capture module (5) is used to generate a sequence of optical sampling pulses whose amplitude is modulated by the sampled signal, using a dual parallel modulator, a cascaded phase modulator and intensity modulator, a cascaded intensity modulator, or an optical microcavity.

9. The photonic analog-to-digital converter chip according to claim 2, characterized in that, The photodetector array (7) consists of N PIN diodes formed by growing germanium or germanium-silicon on silicon and doping.

10. The photonic analog-to-digital converter chip according to any one of claims 2-9, characterized in that... The light source array is heterogeneously integrated by bonding III-V group materials to silicon wafers using bonding technology. The bonding methods include direct bonding, eutectic bonding, anodic bonding, thermo-press bonding, or ultrasonic bonding.

11. The photonic analog-to-digital conversion system based on wavelength multiplexing and optical trapping according to claim 1, characterized in that, In the aforementioned photonic analog-to-digital converter chip, except for the delay lines of the N channels, the optical path lengths of the other optical links are the same.

12. The photonic analog-to-digital converter chip according to any one of claims 2-9, characterized in that, In the aforementioned photonic analog-to-digital converter chip, except for the delay lines of the N channels, the optical path lengths of the other optical links are the same.

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