A current limiting device in a semiconductor shower plate
By setting a flow limiting device in the air inlet channel of the spray plate, the problem of film non-uniformity caused by insufficient gas flow rate in the prior art is solved, and the deposition uniformity and product yield are improved without increasing the gas flow rate.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- PIOTECH CO LTD
- Filing Date
- 2022-12-23
- Publication Date
- 2026-06-05
AI Technical Summary
In existing technologies, increasing the carrier gas flow rate of the process gas to change the gas velocity in the spray chamber increases costs and equipment complexity, leading to uneven thin film deposition at the wafer edge, which affects process quality and product yield.
A flow-limiting device is installed in the air inlet channel of the spray plate. The device is a cylindrical structure with multiple sections along the axial direction on the inner circumference. The diameter of the middle section is narrower than that of the two ends. It is connected by a bevel and has an axial strip groove and a snap-fit part to improve the gas flow rate and uniformity.
Without increasing the gas flow rate, the kinetic energy of the process gas entering the spray chamber is increased, ensuring that the gas fully extends to the edges, thereby improving the uniformity of thin film deposition and process quality, and increasing product yield.
Smart Images
Figure CN115863221B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to semiconductor process equipment and apparatus, and more particularly to a flow guiding device in a semiconductor spray plate. Background Technology
[0002] In semiconductor processing, such as thin-film deposition, a spray plate is used to spray gas onto the surface of the semiconductor to be processed. Enhancing the uniformity of gas flow within the spray chamber of the spray plate is crucial for improving the quality of the processed product. At the same time, the gas flow rate within the spray chamber also has a significant impact on the quality of the processed product.
[0003] In semiconductor manufacturing processes, especially spray processes, a common problem is that the process gas used for the spray deposition reaction has insufficient flow rate, resulting in thinner film deposition at the edges of the wafer, which affects the quality of the deposition process and the product yield.
[0004] In existing technologies, altering the gas flow rate within the spray chamber primarily involves increasing the carrier gas flow rate, thereby changing the gas velocity and improving the uniformity of process gas distribution within the reaction chamber. However, increasing the carrier gas flow rate has drawbacks, such as increasing reactant material costs or requiring additional gas increment control devices.
[0005] In order to overcome the above-mentioned defects in the existing technology, there is an urgent need in the field for a flow guiding device in a semiconductor spray plate, which is added to the air inlet channel of the cover plate of the spray plate. This device can increase the kinetic energy of the process gas entering the spray chamber without increasing the gas flow rate, so that the gas can be fully extended to all edges after entering the chamber, thereby improving the uniformity of the deposited film and thus improving the processing quality and product yield of the semiconductor process. Summary of the Invention
[0006] The following provides a brief overview of one or more aspects to offer a basic understanding of them. This overview is not an exhaustive summary of all conceived aspects, nor is it intended to identify key or decisive elements of all aspects, nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form to prepare for the more detailed descriptions that follow.
[0007] In order to overcome the above-mentioned defects in the prior art, the present invention provides a flow limiting device in a semiconductor spray plate. The spray plate includes an upper cover plate with an air inlet channel in the center. The flow limiting device is inserted into the air inlet channel. The flow limiting device is a cylindrical structure with its inner circumference divided into multiple segments along the axial direction. The diameter of the middle segment is narrower than the diameter of the upper and lower ends. The multiple segments are smoothly transitioned by inclined surfaces.
[0008] In one embodiment, preferably, the diameter of the aperture of the middle section of the current limiting device in the semiconductor spray plate provided by the present invention accounts for 1 / 4 to 1 / 2 of the outer diameter of the current limiting device, and the length of the middle section accounts for 30% to 40% of the total length of the current limiting device.
[0009] In one embodiment, preferably, the current limiting device in the semiconductor spray plate provided by the present invention has a plurality of axial strip-shaped grooves evenly distributed on the inner periphery of the middle section, and the plurality of strip-shaped grooves are inclined at a predetermined angle in the same direction.
[0010] In one embodiment, preferably, the current limiting device in the semiconductor spray plate provided by the present invention has a strip groove whose length is 8% to 12% longer than the length of the middle section.
[0011] In one embodiment, optionally, the current limiting device in the semiconductor spray plate provided by the present invention has 6 to 10 strip-shaped grooves, and the predetermined angle is 5° to 20°.
[0012] In one embodiment, optionally, the current limiting device in the semiconductor spray plate provided by the present invention has its inner periphery divided into three sections along the axial direction: an upper section, a lower section, and a middle section. The inner periphery of the upper section and the lower section is an inclined surface connecting the two end faces of the current limiting device with the middle section. The two end faces are inclined at a small angle to form a transition with the inclined surfaces of the upper section and the lower section.
[0013] In one embodiment, optionally, the current limiting device in the semiconductor spray plate provided by the present invention has a total length of 70-140 mm, wherein the upper section accounts for 30%-40% of the total length of the current limiting device, and the lower section accounts for 25%-35% of the total length of the current limiting device.
[0014] In one embodiment, optionally, the current limiting device in the semiconductor spray plate provided by the present invention, when cut along the axial section of the current limiting device, has an angle between the side surfaces of the upper inner periphery of the upper section of 30° to 90° and an angle between the side surfaces of the lower inner periphery of the lower section of 30° to 120°.
[0015] In one embodiment, preferably, the flow limiting device in the semiconductor spray plate provided by the present invention has an outer wall shape that matches the inner wall of the air intake channel, and the top of the outer wall of the flow limiting device is provided with a snap-fit portion to cooperate with the mounting portion in the air intake channel so that the flow limiting device is inserted and snapped into the air intake channel.
[0016] In one embodiment, preferably, the flow limiting device in the semiconductor spray plate provided by the present invention further includes a sealing ring between the snap-fit portion of the flow limiting device and the mounting portion of the air intake channel to achieve sealed installation. Attached Figure Description
[0017] The above-described features and advantages of the present invention will be better understood after reading the following detailed description of embodiments of the present disclosure in conjunction with the accompanying drawings. In the drawings, components are not necessarily drawn to scale, and components having similar related characteristics or features may have the same or similar reference numerals.
[0018] Figure 1 This is a schematic diagram illustrating the assembly structure of a current limiting device in a semiconductor spray plate according to an embodiment of the present invention.
[0019] Figure 2 This is a schematic diagram illustrating the device structure of a current-limiting device in a semiconductor spray plate according to an embodiment of the present invention; and
[0020] Figure 3 This is a schematic diagram of the current limiting device in a semiconductor spray plate according to another embodiment of the present invention.
[0021] For clarity, a brief explanation of the reference numerals in the accompanying drawings is provided below:
[0022] 100 spray plate
[0023] 101 top cover
[0024] 102 Spray Panel
[0025] 103 flow guiding device
[0026] 104 intake channel
[0027] 105 Current Limiting Device
[0028] 1051 Middle Section
[0029] 200 Current limiting device
[0030] 201 Middle Section
[0031] 2011 aperture diameter
[0032] 202 upper section
[0033] 2021 First Angle
[0034] 203 second paragraph
[0035] 2031 Second Angle
[0036] 204 Card Connector
[0037] 300 Current Limiting Device
[0038] 301 Middle Section
[0039] 302 upper section
[0040] 303 second paragraph
[0041] 304 strip grooves Detailed Implementation
[0042] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention is presented in conjunction with preferred embodiments, this does not mean that the features of the invention are limited to these embodiments. On the contrary, the purpose of describing the invention in conjunction with embodiments is to cover other options or modifications that may be derived based on the claims of the present invention. To provide a thorough understanding of the invention, many specific details will be included in the following description. The invention may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of the invention, some specific details will be omitted in the description.
[0043] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.
[0044] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described apparatus must be manufactured or operated in a specific orientation, and therefore should not be construed as limiting the invention.
[0045] It is understood that although terms such as "first," "second," and "third" may be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first components, regions, layers, and / or parts discussed below may be referred to as second components, regions, layers, and / or parts without departing from some embodiments of the present invention.
[0046] In semiconductor processing, such as thin film deposition, a common problem is that the process gas used for spraying the deposition reaction has insufficient flow rate, resulting in thinner film deposition at the edges of the wafer, which affects the quality of the deposition process and the product yield.
[0047] In existing technologies, altering the gas flow rate within the spray chamber primarily involves increasing the carrier gas flow rate, thereby changing the gas velocity and improving the uniformity of process gas distribution within the reaction chamber. However, increasing the carrier gas flow rate has drawbacks, such as increasing reactant material costs or requiring additional gas increment control devices.
[0048] To overcome the aforementioned deficiencies in the prior art, the present invention provides a flow guiding device in a semiconductor spray plate, which is added to the air inlet channel of the cover plate of the spray plate. This device can increase the kinetic energy of the process gas entering the spray chamber without increasing the gas flow rate, thereby allowing the gas to fully expand to all edges after entering the chamber, improving the uniformity of the deposited film, and thus improving the processing quality and product yield of the semiconductor process.
[0049] Figure 1 This is a schematic diagram illustrating the assembly structure of a current limiting device in a semiconductor spray plate according to an embodiment of the present invention.
[0050] Please refer to Figure 1 The spray plate 100 for semiconductor deposition processes includes a top cover plate 101 and a spray panel 102 with side-sealed connections. A flow guiding device 103 is provided between the top cover plate 101 and the spray panel 102. An air inlet channel 104 is provided in the center of the top cover plate 101. Process gas enters the interior of the spray plate 100 through the air inlet channel 104, flows to various parts of the spray chamber through the flow guiding device 103, and is then sprayed onto the semiconductor surface to be treated through the spray holes on the spray panel 102 to carry out the thin film deposition process reaction.
[0051] like Figure 1 As shown, the flow limiting device 105 in the semiconductor spray plate provided by the present invention is inserted into the air inlet channel 104. The flow limiting device 105 has a cylindrical structure, and its inner circumference is divided into multiple segments along the axial direction. The aperture of the middle segment 1051 is narrower than that of the upper and lower ends. The multiple segments are smoothly transitioned by inclined surfaces, thereby reducing gas resistance, increasing the flow rate of the reaction gas, and thus improving the uniformity of gas distribution in the chamber, ultimately achieving the purpose of improving the deposition process quality.
[0052] Figure 2 This is a schematic diagram of the current limiting device in a semiconductor spray plate according to an embodiment of the present invention.
[0053] Please refer to Figure 2 In a preferred embodiment, the aperture diameter 2011 of the intermediate section 201 in the current limiting device 200 of the semiconductor spray plate provided by the present invention accounts for 1 / 4 to 1 / 2 of the outer diameter of the current limiting device 200, and the length of the intermediate section 201 accounts for 30% to 40% of the total length of the current limiting device 200.
[0054] As will be readily understood by those skilled in the art, due to the narrow inner diameter of the middle section, the gas injected into the inlet channel 104 experiences a rapid flow rate when passing through the middle section 1051, and consequently the gas flow rate entering the spray chamber also increases accordingly. This simultaneously improves the dissociation rate of the process gas, thereby increasing the kinetic energy of the process gas entering the spray chamber without increasing the gas flow rate. This allows the gas to fully expand to all edges after entering the chamber, improving the uniformity of thin film deposition and thus enhancing the quality of the process product.
[0055] exist Figure 2 In the embodiment shown, the up and down arrows indicate the gas flow direction. The inner circumference of the flow limiting device 200 is divided into three sections along the axial direction: the upper section 202, the lower section 203, and the middle section 201. The inner circumference of the upper section 202 and the lower section 203 are inclined surfaces that connect the two end faces of the flow limiting device 200 with the middle section 201, thereby forming a smooth transition gas passage and also playing a certain guiding role for the reaction gas.
[0056] Furthermore, in a preferred embodiment, the two end faces of the current limiting device 200 provided by the present invention are inclined at a small angle to form a transition with the inclined surfaces of the upper section 202 and the lower section 203. This can be seen in conjunction with reference to... Figure 1 It is easy to understand that the structural design of this end face can reduce the obstruction to the airflow when the gas enters the flow limiting device through the air inlet channel, guide the reaction gas into the flow limiting device, and thus avoid the process gas from depositing at the end of the flow limiting device, which would cause inconvenience to subsequent processes or equipment maintenance.
[0057] Those skilled in the art will understand that the description of the inner circumferential surface shape of the current limiting device is merely illustrative and intended to better illustrate the device structure of the current limiting device in the semiconductor spray plate provided by this invention. Specifically, it is to illustrate the effect of the narrower aperture in the middle section of the inner circumferential surface of the current limiting device compared to the apertures at both ends, thereby enhancing the flow velocity of the reactant gas and improving the uniformity of gas distribution, and is not intended to limit the scope of protection of this invention. In fact, other structures that can achieve similar effects, such as a curved inner circumferential surface with an inwardly convex middle section, can also be applied to the current limiting device in the semiconductor spray plate provided by this invention, and should also be included within the scope of protection of this invention.
[0058] exist Figure 2 In the illustrated embodiment, for example, the total length of the current limiting device 200 can be 70 to 140 mm. Correspondingly, the length of the upper segment 202 can account for 30% to 40% of the total length of the current limiting device 200, and the length of the lower segment 203 can account for 25% to 35% of the total length of the current limiting device 200.
[0059] Meanwhile, you can continue to refer to Figure 2In this embodiment, when the flow limiting device 200 is cut along its axial section, the angle between the sides of the inner periphery of the upper section 202, i.e., the first angle 2021, can be 30° to 90°, and the angle between the sides of the inner periphery of the lower section 203, i.e., the second angle 2031, can be 30° to 120°.
[0060] It is easy to understand that, because the gas flow velocity through the lower section 203 is greater than that through the upper section 202 after acceleration in the middle section 201, the second angle 2031 can be slightly larger than the first angle 2021. This further helps the accelerated reaction gas to flow to all parts of the cavity edge at a higher gas flow velocity, thereby avoiding the problem of uneven gas distribution caused by gas flow velocity, which could further lead to an excessively thin film deposition at the wafer edge.
[0061] Those skilled in the art will understand that these dimensional proportions are set to better reflect the effect of the flow-limiting device in the semiconductor spray plate provided by the present invention in increasing the gas flow rate of the reactant gas flowing into the inlet channel, rather than to limit the scope of protection of the present invention. In fact, the specific dimensions of the flow-limiting device in the semiconductor spray plate provided by the present invention can be adaptively adjusted and changed according to the dimensions of specific components in the process equipment in which it is applied or the specific process requirements.
[0062] You can refer to the following: Figure 1 In a preferred embodiment, the outer wall shape of the flow limiting device 105 in the semiconductor spray plate provided by the present invention matches the inner wall of the air intake channel 104, thereby facilitating the fixed installation between the two.
[0063] You can continue to refer to this. Figure 2 Furthermore, in this preferred embodiment, the top of the outer wall of the flow limiting device 200 is provided with a snap-fit portion 204 to cooperate with the mounting portion in the air intake channel so that the flow limiting device 200 is inserted and snapped into the air intake channel.
[0064] For example, in Figure 2 In the illustrated embodiment, the snap-fit portion 204 can be an outwardly protruding inverted conical slope, and the mounting portion within the air intake channel can be a bucket-shaped structure that matches the shape of the snap-fit portion 204, thus achieving a mating installation. Alternatively, the mounting portion within the air intake channel can also be a positioning step, and the snap-fit portion 204 can be a matching positioning protrusion or positioning groove, thereby achieving a snap-fit installation of the flow restrictor 200. It is readily understood that the device structure used for mating installation on this flow restrictor is merely illustrative and not intended to limit the scope of protection of this invention.
[0065] In a preferred embodiment, a sealing ring may be provided between the snap-fit portion of the flow limiting device and the mounting portion of the air intake channel to achieve a sealed installation of the flow limiting device, thereby preventing the reaction gas from depositing in the installation gap and causing inconvenience to equipment maintenance.
[0066] Figure 3 This is a schematic diagram of the current limiting device in a semiconductor spray plate according to another embodiment of the present invention.
[0067] Please refer to Figure 3 In a preferred embodiment, the inner periphery of the current limiting device 300 in the semiconductor spray plate provided by the present invention may have a plurality of axial strip-shaped grooves 304 evenly distributed in the middle section 301.
[0068] For example, in Figure 3 In the illustrated embodiment, the flow limiting device 300 can still be divided into three sections: upper section 302, middle section 301, and lower section 303. The length of the strip-shaped groove 304 can be 8% to 12% longer than the length of the middle section 301, so that the reactant gas can pass more smoothly through the narrow middle section 301, further improving the airflow distribution in the chamber, thereby improving the process quality of thin film deposition and meeting process requirements.
[0069] At the same time, such as Figure 3 As shown, the plurality of strip-shaped grooves 304 can be tilted at a predetermined angle in the same direction. For example, the number of strip-shaped grooves 304 is 6 to 10, and the predetermined angle is 5° to 20°. It is readily understood that the dimensions, number, and angle of the strip-shaped grooves 304 are merely illustrative examples and are not intended to limit the scope of protection of the present invention. The numerical values can be adapted and adjusted according to the specific needs of the actual production process.
[0070] This invention provides a flow guiding device in a semiconductor spray plate, which is added to the air inlet channel of the cover plate of the spray plate. The gas orifice in the middle section is narrow, which increases the flow rate of the reaction gas and the dissociation rate of the process gas. This increases the kinetic energy of the process gas entering the spray chamber without increasing the gas flow rate, allowing the gas to fully expand to all edges after entering the chamber, thus improving the uniformity of the deposited film. Compared with the spray device in the prior art, the flow guiding device in the semiconductor spray plate provided by this invention can increase the film deposition rate from 18% to more than 50% under the same process conditions, effectively improving process quality and increasing product yield.
[0071] The prior description of this disclosure is provided to enable any person skilled in the art to make or use this disclosure. Various modifications to this disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not intended to be limited to the examples and designs described herein, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims
1. A current limiting device in a semiconductor spray plate, the spray plate including a top cover plate with a central air inlet channel, the current limiting device being inserted into the air inlet channel. The flow-limiting device is a cylindrical structure, its inner circumference divided into multiple segments along the axial direction. The diameter of the middle segment is narrower than that of the upper and lower ends, and the segments are smoothly transitioned by inclined surfaces. The inner circumference of the flow limiting device has a plurality of axial strip-shaped grooves evenly distributed in the middle section, and the plurality of strip-shaped grooves are inclined at a predetermined angle in the same direction.
2. The current limiting device as described in claim 1, characterized in that, The diameter of the orifice in the middle section is 1 / 4 to 1 / 2 of the outer diameter of the flow limiting device, and the length of the middle section is 30% to 40% of the total length of the flow limiting device.
3. The current limiting device as described in claim 1, characterized in that, The length of the strip-shaped groove is 8% to 12% longer than the length of the middle section.
4. The current limiting device as described in claim 1, characterized in that, The number of the strip-shaped grooves is 6 to 10, and the predetermined angle is 5° to 20°.
5. The current limiting device as described in claim 2, characterized in that, The inner circumference of the flow limiting device is divided into three sections along the axial direction: an upper section, a lower section, and a middle section. The inner circumference of the upper section and the lower section is an inclined surface connecting the two end faces of the flow limiting device with the middle section. The two end faces are inclined at a small angle to form a transition with the inclined surfaces of the upper section and the lower section.
6. The current limiting device as described in claim 5, characterized in that, The total length of the current limiting device is 70-140 mm, wherein the upper section accounts for 30%-40% of the total length of the current limiting device, and the lower section accounts for 25%-35% of the total length of the current limiting device.
7. The current limiting device as described in claim 5, characterized in that, When the flow limiting device is cut along its axial section, the angle between the sides of the upper inner circumference is 30° to 90°, and the angle between the sides of the lower inner circumference is 30° to 120°.
8. The current limiting device as described in claim 1, characterized in that, The outer wall of the flow limiting device is shaped to match the inner wall of the air intake channel. The top of the outer wall of the flow limiting device is provided with a snap-fit part to match the mounting part in the air intake channel so that the flow limiting device is inserted and snapped into the air intake channel.
9. The current limiting device as described in claim 8, characterized in that, A sealing ring is also provided between the snap-fit part of the flow limiting device and the mounting part of the air intake channel to achieve sealed installation.