Display panel and display device

By employing a hybrid driving circuit of polycrystalline oxide semiconductor and amorphous oxide semiconductor in the display panel, and setting up and separating the active layer in different layers, the problems of non-uniform thin film transistor characteristics and high cutoff current in large-size products of LTPO backplane technology are solved, achieving a display effect with high mobility and low leakage current, which is suitable for large-size display panels and display devices.

CN115863357BActive Publication Date: 2026-08-28SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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Patent Information

Application Number
CN202211659307.3
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2022-12-22
Publication Date
2026-08-28
Estimated Expiration
2042-12-22

AI Technical Summary

Technical Problem

Existing LTPO backplane technology suffers from non-uniform thin-film transistor characteristics and high cutoff current in large-size products, resulting in decreased display quality and high cost, making it unsuitable for mass production. The driving TFTs using polycrystalline silicon semiconductor materials still have the problem of high cutoff current.

Method used

A hybrid driving circuit using polycrystalline oxide semiconductors and amorphous oxide semiconductors is adopted. Amorphous oxide semiconductor transistors are used as switching transistors, while polycrystalline oxide semiconductors with high mobility and low cutoff leakage current are used as driving transistors. By separating them through heterogeneous layer setting and insulating layer, the probability of water and oxygen intrusion is reduced and the stability of driving circuit is improved.

Benefits of technology

It achieves improved uniformity of thin-film transistor characteristics, reduces leakage current, improves display quality, and can be applied to large-size display panels and display devices, overcoming the size limitations of existing technologies.

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Abstract

The application provides a display panel and a display device. The display panel comprises a first transistor, a second transistor and a first interlayer insulating layer between the first transistor and the second transistor. The first transistor comprises a first active layer, and the material of the first active layer is amorphous oxide semiconductor. The second transistor comprises a second active layer, and the material of the second active layer is polycrystalline oxide semiconductor. The display panel and the display device provided by the application have a mixed driving circuit of polycrystalline oxide semiconductor and amorphous oxide semiconductor, the amorphous oxide semiconductor transistor with low leakage current and high uniformity is used as a switching transistor, and the high mobility and low off-leakage current are used as a driving transistor, so that the leakage current is reduced, the first transistor and the second transistor are arranged in different layers, and the first active layer and the second active layer are separated by the first interlayer insulating layer, so that the probability of the two being simultaneously invaded by water and oxygen is reduced, and the stability of the driving circuit is improved.
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