Plasma processing apparatus and lid member

Abstract

The present application relates to a plasma processing apparatus and a cover member. Even in a case where a radiation portion that radiates microwaves is arranged at an upper portion of a processing container, cleaning can be performed using a remote plasma. The processing container is internally provided with a stage on which a substrate is placed, and the processing container is formed with an opening at an upper side of the stage. The cover member seals the opening of the processing container. The cover member is formed with one or more through holes for arranging the radiation portion of the microwaves at a region opposite to the stage, and the cover member is formed with a protruding portion protruding toward an inner side of the processing container along an edge of the opening at a first surface that is an inner side of the processing container, a flow path is formed inside the protruding portion, a plurality of air holes that communicate with the flow path are formed at the first surface, and a supply port that communicates with the flow path is formed at a second surface that is an outer side of the processing container. A remote plasma unit is connected to the supply port, and a cleaning gas is plasma-ized and supplied to the supply port.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a plasma processing apparatus and a lid member. BACKGROUND

[0002] In Patent Literature 1, a structure is disclosed in which a remote plasma unit is arranged in an upper portion of a chamber (processing container), and a cleaning gas is plasma- ized by the remote plasma unit and supplied into the chamber.

[0003] PRIOR ART DOCUMENTS

[0004] PATENT LITERATURE

[0005] Patent Literature 1: Japanese Patent Application Publication No. 2006-319042 SUMMARY

[0006] PROBLEMS TO BE SOLVED BY THE INVENTION

[0007] The present disclosure provides a technology capable of performing cleaning by a remote plasma even in a case where a radiation portion that radiates microwaves is arranged in an upper portion of a processing container.

[0008] SOLUTION TO PROBLEM

[0009] A plasma processing apparatus of a technical solution of the present disclosure has a processing container, a lid member, and a remote plasma unit. The processing container has a stage on which a substrate is placed, and an opening is formed on an upper side of the stage. The lid member seals the opening of the processing container. The lid member has one or more through holes for arranging a radiation portion that radiates microwaves in a region opposite to the stage, and a protruding portion that protrudes toward an inner side of the processing container along an edge of the opening is formed on a first surface that is on the inner side of the processing container. A flow path is formed inside the protruding portion, a plurality of air holes that communicate with the flow path are formed on the first surface, and a supply port that communicates with the flow path is formed on a second surface that is on an outer side of the processing container. The remote plasma unit is connected to the supply port, and a cleaning gas is plasma- ized and supplied to the supply port.

[0010] EFFECT OF THE INVENTION

[0011] According to the present disclosure, cleaning can be performed by a remote plasma even in a case where a radiation portion that radiates microwaves is arranged in an upper portion of a processing container. BRIEF DESCRIPTION OF DRAWINGS

[0012] Figure 1 is a cross-sectional view schematically showing one example of a plasma processing apparatus of an embodiment.

[0013] Figure 2 is a view showing one example of a structure of a top wall portion of an embodiment.

[0014] Figure 3 FIG. 1 is a view showing one example of a structure of a top wall portion of an embodiment.

[0015] Figure 4 FIG. 2 is an enlarged view of FIG. 1.

[0016] Figure 5 FIG. 3 is an enlarged view of FIG. 1. DETAILED DESCRIPTION

[0017] Hereinafter, an embodiment of a plasma processing apparatus and a cover member disclosed in the present application will be described in detail with reference to the drawings. Note that the disclosed plasma processing apparatus and cover member are not limited to the present embodiment.

[0018] In recent years, along with high densification and high miniaturization of semiconductor products, a plasma processing apparatus using microwaves in film formation processing is being used in a manufacturing process of semiconductor products. In such a plasma processing apparatus, a microwave radiating mechanism or the like radiating portion radiates microwaves from a radiating portion to the inside of a processing container to generate plasma. The plasma processing apparatus is able to stably maintain plasma even in a high vacuum state where the pressure is relatively low by using microwaves. In addition, the plasma processing apparatus is able to generate high-density plasma by using microwaves.

[0019] In addition, in a case where the plasma processing apparatus performs film formation processing, deposits are deposited on the inner wall surface or the like of the processing container. Therefore, cleaning of supplying a cleaning gas plasma-processed by a remote plasma unit or the like to the inside of the processing container to remove the deposits is considered. If the flow path is long, the cleaning gas plasma-processed by the remote plasma unit is deactivated halfway. Therefore, in the related art, the remote plasma unit is disposed above the cover member or the upper portion of the processing container to shorten the flow path of the plasma-processed cleaning gas. However, the plasma processing apparatus using microwaves is provided with a radiating portion in the upper portion of the processing container, and thus the remote plasma unit cannot be disposed in the upper portion of the processing container. Therefore, a technique capable of performing cleaning by a remote plasma even in a case where the radiating portion radiating microwaves is disposed in the upper portion of the processing container is expected.

[0020] [EMBODIMENT]

[0021] One example of a plasma processing apparatus of the present disclosure will be described. Figure 1 FIG. 1 is a view showing one example of a structure of a top wall portion of an embodiment. Figure 1The illustrated plasma processing apparatus 100 has a processing container 101, a stage 102, a gas supply mechanism 103, an exhaust device 104, and a microwave introduction device 105.

[0022] The processing container 101 accommodates a substrate W such as a semiconductor wafer. The processing container 101 is provided with the stage 102 inside. The substrate W is placed on the stage 102. The gas supply mechanism 103 supplies a gas into the processing container 101. The exhaust device 104 exhausts the inside of the processing container 101. The microwave introduction device 105 generates microwaves for generating plasma in the processing container 101, and introduces the microwaves into the processing container 101.

[0023] The processing container 101 is formed of a metal material such as aluminum and its alloy, for example, and has a substantially cylindrical shape. The processing container 101 has a plate-shaped top wall portion 200 and a bottom wall portion 113, and a side wall portion 112 that links them. The processing container 101 is configured so that the top wall portion 200 that constitutes the upper surface is detachable. The processing container 101 is formed with an opening 101a on the upper side of the stage 102. The top wall portion 200 is formed in a shape that corresponds to the opening 101a of the processing container 101, and seals the opening 101a. In the embodiment, the top wall portion 200 corresponds to the cover member of the present disclosure. The inner wall of the processing container 101 is provided with a protective film by coating with yttria (Y2O3) or the like. The microwave introduction device 105 is provided at the upper portion of the processing container 101, and generates plasma by introducing electromagnetic waves (microwaves) into the processing container 101. The microwave introduction device 105 will be described in detail later.

[0024] The top wall portion 200 has a plurality of through-holes 201, 202 into which a microwave radiation mechanism 143 and a gas introduction nozzle 123 of the microwave introduction device 105 described later are inserted. The side wall portion 112 has a carry-in / out port 114 for carrying in and out the substrate W with a transport chamber (not shown) adjacent to the processing container 101. In addition, the side wall portion 112 is provided with a gas introduction nozzle 124 at a position on the upper side than the stage 102. The carry-in / out port 114 is opened and closed by a gate valve 115.

[0025] The bottom wall portion 113 is provided with an opening 113a, and the exhaust device 104 is provided via an exhaust pipe 116 connected to the opening 113a. The exhaust device 104 has a vacuum pump and a pressure control valve. The vacuum pump of the exhaust device 104 exhausts the inside of the processing container 101 via the exhaust pipe 116. The pressure in the processing container 101 is controlled by the pressure control valve of the exhaust device 104.

[0026] The stage 102 is formed in a circular plate shape. The stage 102 is made of a metal material such as aluminum on the surface of which an anodization treatment is performed or a ceramic material such as aluminum nitride (AIN). The stage 102 supports the substrate W on the upper surface. The stage 102 is supported by a cylindrical support member 120 made of a ceramic such as AIN and a base member 121 extending upward from the center of the bottom of the processing container 101. A guide ring 181 for guiding the substrate W is provided at the outer edge portion of the stage 102. In addition, a lift pin (not shown) for lifting the substrate W is provided inside the stage 102 so as to be able to protrude and sink with respect to the upper surface of the stage 102.

[0027] Further, a heater 182 is embedded in the stage 102. The heater 182 heats the substrate W placed on the stage 102 by being supplied with power from a heater power source 183. In addition, a thermocouple (not shown) is inserted into the stage 102, and the heating temperature of the substrate W can be controlled on the basis of a signal from the thermocouple. Further, an electrode 184 of the same size as the substrate W is embedded above the heater 182 in the stage 102. A high-frequency bias power source 122 is electrically connected to the electrode 184. The high-frequency bias power source 122 applies a high-frequency bias for introducing ions to the stage 102. In addition, depending on the characteristics of the plasma processing, the high-frequency bias power source 122 can not be provided.

[0028] A gas supply mechanism 103 supplies various kinds of gas into the processing container 101. The gas supply mechanism 103 has gas introduction nozzles 123, 124, gas supply pipes 125, 126, and a gas supply section 127. The gas introduction nozzle 123 is embedded in a through-hole 202 formed in the top wall portion 200 of the processing container 101. The gas introduction nozzle 124 is embedded in a through-hole 112a formed in the side wall portion 112 of the processing container 101. The gas supply section 127 is connected to each of the gas introduction nozzles 123 via the gas supply pipes 125. In addition, the gas supply section 127 is connected to each of the gas introduction nozzles 124 via the gas supply pipes 126. The gas supply section 127 has supply sources of various kinds of gas. In addition, the gas supply section 127 is provided with on-off valves that perform start and stop of supply of various kinds of gas, and flow rate adjustment sections that adjust the flow rates of the gases. For example, in the case where a film formation process is performed, the gas supply section 127 supplies a processing gas containing a film formation material. In addition, in the case where a plasma cleaning process is performed, the gas supply section 127 supplies a cleaning gas.

[0029] A microwave introduction device 105 is provided above the processing container 101. The microwave introduction device 105 introduces electromagnetic waves (microwaves) into the processing container 101 to generate plasma.

[0030] The microwave introduction device 105 has a top wall portion 200 of the processing container 101, a microwave output portion 130, and an antenna unit 140. The top wall portion 200 functions as a top plate of the processing container 101. The microwave output portion 130 generates microwaves, and distributes and outputs the microwaves to a plurality of paths. The antenna unit 140 introduces the microwaves output from the microwave output portion 130 to the processing container 101.

[0031] The microwave output portion 130 has a microwave power source, a microwave oscillator, an amplifier, and a distributor. The microwave oscillator is solid-state, and oscillates microwaves at, for example, 860 MHz (for example, PLL oscillation). Furthermore, the frequency of the microwaves is not limited to 860 MHz, and frequencies in the range of 700 MHz to 10 GHz, such as 2.45 GHz, 8.35 GHz, 5.8 GHz, 1.98 GHz, and the like, can be used. The amplifier amplifies the microwaves oscillated by the microwave oscillator. The distributor distributes the microwaves amplified by the amplifier to a plurality of paths. The distributor matches the impedances of the input side and the output side while distributing the microwaves.

[0032] The antenna unit 140 has a plurality of antenna modules. Three antenna modules of the antenna unit 140 are shown in Figure 1 Each antenna module has an amplifier portion 142 and a microwave radiating mechanism 143. The microwave output portion 130 generates microwaves, and outputs the microwaves to each antenna module after distributing the microwaves. The amplifier portion 142 of the antenna module mainly amplifies the distributed microwaves, and outputs the microwaves to the microwave radiating mechanism 143. The microwave radiating mechanism 143 is provided to the top wall portion 200. The microwave radiating mechanism 143 radiates the microwaves output from the amplifier portion 142 to the inside of the processing container 101.

[0033] The amplifier portion 142 has a phase adjuster, a variable gain amplifier, a main amplifier, and an isolator. The phase adjuster changes the phase of the microwaves. The variable gain amplifier adjusts the power level of the microwaves input to the main amplifier. The main amplifier is configured as a solid-state amplifier. The isolator separates the reflected microwaves to the main amplifier, which are reflected by the antenna portion of the microwave radiating mechanism 143 described later.

[0034] As shown in Figure 1 A plurality of microwave radiating mechanisms 143 are respectively arranged in the top wall portion 200. The microwave radiating mechanism 143 has an outer conductor that is in a cylindrical shape, and an inner conductor that is provided coaxially with the outer conductor inside the outer conductor. In addition, the microwave radiating mechanism 143 has, between the outer conductor and the inner conductor, a coaxial tube that has a microwave transmission path, and an antenna portion that radiates microwaves to the inside of the processing container 101. A microwave transmission plate 163 is provided on the lower surface side of the antenna portion. The lower surface of the microwave transmission plate 163 is exposed to the inside space of the processing container 101. The microwaves that have transmitted through the microwave transmission plate 163 generate plasma in the space inside the processing container 101.

[0035] Figure 2 is a view showing one example of the structure of the top wall portion 200 of the embodiment. In Figure 2 a perspective view showing the lower surface 200a of the top wall portion 200 that becomes the inside of the processing container 101 is shown. As Figure 2 indicated, seven through-holes 201 for disposing the microwave radiation mechanisms 143 of the antenna module are provided in the top wall portion 200. In the top wall portion 200, six through-holes 201a are disposed in a manner that they become the vertices of a regular hexagon, and the other through-hole 201 is disposed as a through-hole 201b at the center of the regular hexagon. The seven through-holes 201 are disposed in a manner that adjacent through-holes 201 become equidistant. The microwave radiation mechanisms 143 are respectively disposed in the seven through-holes 201. Thus, in the top wall portion 200, the microwave radiation mechanisms 143 are disposed equidistantly. In addition, a plurality of through-holes 202 are disposed in the top wall portion 200 in a manner that they surround the periphery of the central through-hole 201b. The plurality of gas introduction nozzles 123 of the gas supply mechanism 103 are respectively fitted in the plurality of through-holes 202. Further, the number of the antenna modules provided in the top wall portion 200 is not limited to seven.

[0036] Here, the flow of film formation is simply explained. The plasma processing apparatus 100 places the substrate W on the placement table 102. The plasma processing apparatus 100 performs film formation processing on the substrate W placed on the placement table 102. For example, the plasma processing apparatus 100 applies a bias power from the high-frequency bias power source 122 to the placement table 102. In addition, the plasma processing apparatus 100 supplies a processing gas containing a film formation material from the gas supply section 127 into the processing container 101, and introduces microwaves from the microwave introduction device 105 into the processing container 101 to generate plasma, and forms a silicon-containing film on the substrate W.

[0037] In a case where the film formation processing is performed by the plasma processing apparatus 100, deposits are deposited on the surface of the structure in the processing container 101. Therefore, the plasma processing apparatus 100 performs plasma cleaning that flows a cleaning gas into the processing container 101 and generates plasma to remove the deposits.

[0038] Here, the attack of the plasma cleaning by the microwaves from the microwave introduction device 105 is strong, and sometimes causes damage to the members in the processing container 101. On the other hand, the attack of the plasma cleaning by the remote plasma is weak, and can suppress the damage to the members in the processing container 101. Therefore, the plasma processing apparatus 100 of the embodiment is configured in the following manner in order to be able to perform the plasma cleaning by the remote plasma.

[0039] As Figure 1As shown, the top wall portion 200 is formed in a shape corresponding to the opening 101a of the processing container 101. In this embodiment, the processing container 101 is formed in a generally cylindrical shape, and the opening 101a is formed in a circular shape on the upper side of the processing container 101. The top wall portion 200 is formed in a circular shape corresponding to the opening 101a of the processing container 101. The top wall portion 200 seals the opening 101a of the processing container 101.

[0040] like Figure 1 and Figure 2 As shown, the central portion of the lower surface 200a of the top wall portion 200, which forms the inner side of the processing container 101, is formed to be generally flat. A through-hole 201 for arranging the microwave emitting mechanism 143 of the antenna module is formed in the central portion of the lower surface 200a, opposite the mounting stage 102. Furthermore, a protrusion 210 is formed on the lower surface 200a of the top wall portion 200, protruding towards the inner side of the processing container 101 along the edge of the opening 101a. The protrusion 210 is formed in a ring shape to surround the central portion of the lower surface 200a.

[0041] Figure 3 This is a diagram illustrating an example of the structure of the top wall portion 200 in an embodiment. Figure 3 The diagram shows a perspective view of the upper surface 200b and side surface 200c of the top wall portion 200, which forms the outer side of the processing container 101. Additionally, in Figure 3 In the diagram, the internal structure of the top wall portion 200 is indicated by dashed lines. As shown by the dashed lines, a flow path 220 is formed inside the protrusion 210 in the top wall portion 200. The flow path 220 is formed in an annular shape along the protrusion 210 inside the protrusion 210. By making the protrusion 210 protrude, the cross-section of the flow path 220 can be made larger in the top wall portion 200. From the perspective of ease of machining, the inner surface of the flow path 220 is formed into a rectangular shape with a cross-section composed of generally flat surfaces. This increases the cross-section of the flow path 220. In addition, even when the aperture of the vent 226 is set to be larger on the processing container 101 side as described later, the minimum wall thickness required to form such a shape of vent 226 can be ensured, and the cross-sectional area of ​​the flow path 220 can be increased. By increasing the cross-section of the flow path 220 in this way, the top wall portion 200 ensures good flow of the plasma-enhanced cleaning gas and suppresses the deactivation of the plasma-enhanced cleaning gas.

[0042] The top wall portion 200 has a supply port 230 communicating with the flow path 220 on its outer side, which becomes the outer side of the processing container 101. In this embodiment, the supply port 230 communicating with the flow path 220 is formed on the side 200c of the top wall portion 200. The portion of the top wall portion 200 in which the supply port 230 is formed expands outward to the peripheral side. The flow path 220 also expands outward to the peripheral side in the portion in which the supply port 230 is formed.

[0043] The top wall portion 200 has a central flow path formed inside the central portion of the lower surface 200a surrounded by the protrusion 210, which communicates with the flow path 220. In this embodiment, a flow path 221 is formed inside the central portion as the central flow path. The flow path 221 is formed in an annular shape surrounding the through hole 201b. In addition, in this embodiment, a flow path 222 is formed as the central flow path, connecting the flow path 220 and the flow path 221. In this embodiment, two flow paths 222 are formed. The cross-sections of the flow paths 221 and 222 are rectangular to increase the internal volume.

[0044] like Figure 1 As shown, a remote plasma unit 240 is connected to the supply port 230. During cleaning, cleaning gas is supplied to the remote plasma unit 240. The remote plasma unit 240 plasmaizes the supplied cleaning gas and supplies it to the supply port 230. The plasmaized cleaning gas flows from the supply port 230 into the flow path 220, and also flows from the flow path 220 into flow paths 222 and 221.

[0045] Figure 4 This is an enlarged view showing an example of the structure of the top wall portion 200 in the embodiment. Figure 4 The diagram shows the structure within the flow path 220, which expands outwardly near the supply port 230 of the top wall portion 200. A step 223 is formed on the inner wall of the flow path 220 on the lower surface 200a side. The step 223 is configured to include two surfaces 223a and 223b of different heights and a surface 223c in the vertical direction between surfaces 223a and 223b. Furthermore, in this embodiment, an inclined surface 223d is also formed between surfaces 223c and 223b of the step 223.

[0046] like Figure 1 , Figure 2 as well as Figure 4As shown, the top wall portion 200, relative to the central portion of the lower surface 200a surrounded by the protrusion 210, has an inclined surface 224 formed on the protrusion 210 that slopes inward toward the interior of the processing container 101. Furthermore, the top wall portion 200 has an angle variation on the lower surface 200a that suppresses the propagation of surface waves at an angle greater than a predetermined angle. For example, the top wall portion 200 has a flat surface 225 formed on the surface connected to the inner surface of the processing container 101 at an angle greater than a predetermined angle relative to that inner surface. The flat surface 225 is an example of an angle variation on the lower surface 200a that is greater than a predetermined angle. In this embodiment, the flat surface 225 is formed on the outer side of the inclined surface 224. The flat surface 225 is formed perpendicular to the side wall portion 112. By forming the flat surface 225 in this way, it is possible to suppress the propagation of surface waves from the central portion of the top wall portion 200 toward the side wall portion 112 of the processing container 101 during plasma processing. Furthermore, by providing a surface equivalent to the flat surface 225 such that the angle between the flat surface 225 and the side wall portion 112 is an acute angle, it is possible to further suppress surface waves propagating to the side wall portion 112 of the processing container 101.

[0047] like Figure 2 and Figure 4 As shown, the top wall portion 200 has a plurality of vents 226 formed on the protrusion 210 of the lower surface 200a, which is the inner side of the processing container 101, communicating with the flow path 220. The plurality of vents 226 are formed to penetrate the two surfaces constituting the step 223 in each of two directions relative to the inclined surface 224. In this embodiment, the top wall portion 200 has vents 226a penetrating in a generally horizontal direction and vents 226b penetrating in a generally vertical direction, arranged along the protrusion 210. The vents 226a and vents 226b are alternately arranged and staggered from each other in a circumferentially non-overlapping manner. The vents 226a are arranged on the inclined surface 224 of the protrusion 210 and penetrate the surface 223c constituting the step 223. The vents 226b are arranged on the flat surface 225 of the protrusion 210 and penetrate the horizontal surface 223a constituting the step 223. In this way, by providing vents 226a in the generally horizontal direction on the vertical surface 223c of the step 223 and providing vents 226b in the generally vertical direction on the horizontal surface 223a of the step 223, the top wall portion 200 can be easily machined to form vents 226a and 226b.

[0048] The gas holes 226a eject the cleaning gas in the flow path 220 toward the center side. The gas holes 226b eject the cleaning gas in the flow path 220 downward. The diameters of the gas holes 226 (226a, 226b) on the lower surface 200a side are made large. Thus, the hole diameters of the gas holes 226 are large on the processing container 101 side, so the ejected cleaning gas easily spreads, and abnormal discharge at the gas holes 226 is suppressed. In addition, the top wall portion 200 is able to perform the ejection of the cleaning gas with reduced influence on each other by arranging the gas holes 226a and the gas holes 226b offset from each other.

[0049] In addition, as shown in Figure 2 The top wall portion 200 is formed with a plurality of gas holes 227 that communicate with the flow path 221 in the central portion of the lower surface 200a on the inside of the processing container 101. The plurality of gas holes 227 are formed in a manner that penetrates the lower surface 200a in the vertical direction. The gas holes 227 eject the cleaning gas in the flow path 221 downward. The gas holes 227 also have diameters on the lower surface 200a side that are made large, like the gas holes 226. Thus, the hole diameters of the gas holes 227 are large on the processing container 101 side, so the ejected cleaning gas easily spreads, and abnormal discharge at the gas holes 227 is suppressed.

[0050] Here, for the top wall portion 200, the plasma-processed cleaning gas is supplied from one supply port 230 to the flow path 220. Thus, for the top wall portion 200, in the case where the gas holes 226 and the gas holes 227 are uniformly arranged with the same hole diameters, respectively, the amount of ejection of the cleaning gas on the supply port 230 side is large, and the distribution of the cleaning gas in the processing container 101 is not uniform. Thus, it is considered that the hole diameters of the gas holes 226, 227 are changed to make the ejection of the cleaning gas uniform according to the positions of the gas holes 226, 227. However, there is a tolerance in the machining precision of the gas holes 226, 227, and it is difficult to make the ejection of the cleaning gas uniform by changing the hole diameters of the gas holes 226, 227.

[0051] Thus, for the top wall portion 200, the gas holes 226, 227 are arranged by changing the intervals of the gas holes 226, 227 in a manner that the plasma-processed cleaning gas supplied to the supply port 230 is uniformly ejected from the plurality of gas holes 226, 227 toward the inside of the processing container 101. The top wall portion 200 arranges the plurality of gas holes 226 and the plurality of gas holes 227 on the side opposite to the supply port 230 side to be denser than on the supply port 230 side, respectively. Thus, the top wall portion 200 is able to make the ejection of the cleaning gas uniform.

[0052] Next, the flow of the plasma cleaning will be explained. The plasma processing apparatus 100 performs the plasma cleaning each time a substrate W on which a prescribed number of films has been formed, or each time a prescribed cumulative film thickness has been formed, etc., becomes a timing at which the plasma cleaning is performed. At the time of performing the plasma cleaning, the plasma processing apparatus 100 adjusts the inside of the processing vessel 101 to a prescribed pressure suitable for the plasma cleaning. Then, the plasma processing apparatus 100 supplies a cleaning gas to the remote plasma unit 240, and ionizes the cleaning gas using the remote plasma unit 240 and supplies it from the supply port 230 to the top wall portion 200. The cleaning gas supplied to the supply port 230 flows in the flow path 220, and in addition, flows from the flow path 220 to the flow paths 222, 221, and is ejected from the gas holes 226, 227 into the inside of the processing vessel 101. In the plasma processing apparatus 100, the cleaning gas supplied from the top wall portion 200 is used to perform the plasma cleaning in the inside of the processing vessel 101.

[0053] Here, for the plasma processing apparatus 100 of the present embodiment, the microwave radiation mechanism 143 and the like microwave introduction means 105 are arranged in the upper portion of the apparatus, and in addition, the process gas is introduced through the gap between the microwave radiation mechanisms 143. These layouts are important in the film forming process, and thus are not easily changed.

[0054] On the other hand, the plasma processing apparatus 100 of the present embodiment is able to perform the cleaning using the remote plasma without affecting the layout of the microwave introduction means 105 and the like in the upper portion of the processing vessel 101 by using the top wall portion 200.

[0055] Further, in the above-described embodiments, the case in which the flat surface 225 is formed on the outer side of the inclined surface 224 has been explained as an example. However, this is not limiting. The flat surface 225 can also be provided on the inner side of the inclined surface 224, or halfway through the inclined surface 224. In addition, the top wall portion 200 can also be configured without the flat surface 225, and can be configured such that the inclined surface 224 is connected to the side wall portion 112.

[0056] In addition, in the above-described embodiments, the case in which the diameters of the gas holes 226 and 227 on the lower surface 200a side are larger has been explained as an example. However, this is not limiting. For example, one or both of the gas holes 226 and 227 can also be formed with a substantially constant diameter.

[0057] Figure 5 is an enlarged view showing another example of the configuration of the top wall portion 200 of the embodiment. In Figure 5 is a view showing the configuration in the flow path 220 of the portion of the top wall portion 200 that expands toward the outer periphery side in the vicinity of the supply port 230. In Figure 5In the illustrated top wall portion 200, the inclined surface 224 is provided in a structure that is continuous with the surface of the side wall portion 112. In addition, in the illustrated top wall portion 200, the gas hole 226 is formed with a substantially constant diameter. Figure 5 In the illustrated top wall portion 200, the gas hole 226 is formed with a substantially constant diameter.

[0058] In addition, in the above-described embodiment, a case in which the supply port 230 is formed in the side surface 200c of the processing container 101 is described as an example. However, the present application is not limited thereto. The supply port 230 can also be provided in a region of the upper surface 200b that does not overlap the microwave radiation mechanism 143.

[0059] As described above, the plasma processing apparatus 100 of the embodiment has the processing container 101, the top wall portion 200 (cover member), and the remote plasma unit 240. The processing container 101 is internally provided with the placement stage 102 on which the substrate W is placed, and the processing container 101 is formed with the opening 101a on the upper side of the placement stage 102. The top wall portion 200 seals the opening 101a of the processing container 101. The top wall portion 200 is formed with one or more through holes 201 for the microwave radiation mechanism 143 (radiation portion) that radiates microwaves in a region opposite the placement stage 102, the top wall portion 200 is formed with the protruding portion 210 that protrudes toward the inside of the processing container 101 along the edge of the opening 101a on the lower surface 200a (first surface) that becomes the inside of the processing container 101, the flow path 220 is formed in the inside of the protruding portion 210, a plurality of gas holes that communicate with the flow path 220 are formed in the lower surface 200a, and the supply port 230 that communicates with the flow path 220 is formed in the upper surface 200b or the side surface 200c (second surface) that becomes the outside of the processing container 101. The remote plasma unit 240 is connected to the supply port 230, and plasma-izes and supplies a cleaning gas to the supply port 230. Thus, the plasma processing apparatus 100 can perform cleaning using remote plasma even when the radiation portion is provided in the upper portion of the processing container 101. In addition, the plasma processing apparatus 100 can form the cross section of the flow path 220 to be large by causing the protruding portion 210 to protrude, can cause the plasma-ized cleaning gas to flow well, and can suppress the inactivation of the plasma-ized cleaning gas.

[0060] Further, the central portion of the top wall portion 200 surrounded by the protruding portion 210 with respect to the lower surface 200a is formed with an inclined surface 224 inclined toward the inside of the processing container 101 at the protruding portion 210, and a plurality of gas holes 226 are formed at the inclined surface 224. As such, the inclined surface 224 is formed at the protruding portion 210 of the top wall portion 200 with respect to the central portion, so that the hole shape viewed from the direction of the opening 101a of the processing container 101 can be elliptical, and the gas can be easily diffused in the processing container 101. Further, the plurality of gas holes 226 are formed at the inclined surface 224, so that radicals of the cleaning gas can be irradiated at all angles from the horizontal direction to the vertical direction. Thus, the radicals can be irradiated to the disposition portion of the microwave radiating mechanism 143 of the lower surface 200a of the top wall portion 200, the placement table 102, the side wall of the processing container 101, and the bottom surface.

[0061] The top wall portion 200 is formed with a plurality of gas holes 226 in at least two directions with respect to each direction in alignment with the inclined surface 224. Thus, the cleaning gas can be ejected in a plurality of directions in the processing container 101, and the cleaning gas can be rapidly diffused in the processing container 101.

[0062] Further, the top wall portion 200 is formed with a step 223 at the inner wall of the flow path 220 on the lower surface 200a side, and a plurality of gas holes 226 (226a, 226b) are formed so as to respectively penetrate two surfaces (surfaces 223a, 223c) constituting the step 223 in two directions with respect to each direction with respect to the inclined surface 224. Thus, the machining of forming the gas holes 226 can be easily performed.

[0063] Further, the top wall portion 200 is formed with a change in angle of the angle of more than a prescribed angle that suppresses the propagation of a surface wave at the lower surface 200a. Further, the top wall portion 200 is formed with a flat surface 225 at a prescribed angle that suppresses the propagation of a surface wave with respect to the inner side surface of the processing container 101 at the surface connected to the inner side surface. Thus, the propagation of the surface wave propagated from the central portion of the top wall portion 200 toward the side wall portion 112 of the processing container 101 can be suppressed.

[0064] Further, the top wall portion 200 is formed with a central flow path (flow paths 221, 222) communicating with the flow path 220 at the inside of the central portion of the lower surface 200a surrounded by the protruding portion 210, and a plurality of gas holes 227 communicating with the central flow path are formed at the central portion. Thus, the cleaning gas can be ejected from the central portion of the top wall portion 200, and the cleaning gas can be rapidly diffused in the processing container 101.

[0065] Further, the top wall portion 200 is arranged so that the interval of the plurality of gas holes 226, 227 is changed in a manner that the plasma-processed cleaning gas supplied to the supply port 230 is uniformly sprayed from the plurality of gas holes 226, 227 to the inside of the processing container 101. Thus, the cleaning gas can be uniformly sprayed to the inside of the processing container 101.

[0066] Further, the top wall portion 200 is arranged so that the plurality of gas holes 226, 227 are arranged denser on the side opposite to the supply port 230 side than on the supply port 230 side. Thus, the cleaning gas can be uniformly sprayed to the inside of the processing container 101.

[0067] Further, the diameter of the plurality of gas holes 226, 227 on the lower surface 200a side is formed larger. Thus, the cleaning gas sprayed from the gas holes 226, 227 can be easily diffused, and abnormal discharge at the gas holes 226, 227 can be suppressed.

[0068] The above-described embodiments are described, but it should be considered that the embodiments disclosed this time are illustrative in all respects but not restrictive. In fact, the above-described embodiments can be implemented in various manners. Further, the above-described embodiments can be omitted, replaced, changed in various manners without departing from the scope and the spirit of the claims.

[0069] For example, in the above-described embodiments, the case where the substrate W is a semiconductor wafer is described as an example, but it is not limited thereto. The substrate W can be any substrate.

Claims

1. A plasma processing apparatus, wherein the plasma processing apparatus has: a processing vessel configured with a stage for placing a substrate inside, the processing vessel being formed with an opening on an upper side of the stage; a cover member that seals the opening of the processing vessel, the cover member having a first face that is an inside of the processing vessel and a second face that is an outside of the processing vessel, and the cover member being formed with one or more through holes for configuring a radiation portion of a microwave radiation in a region opposite to the stage, the cover member further having a ring-shaped protruding portion that protrudes downward from an edge of the cover member, the ring-shaped protruding portion protruding toward the inside of the processing vessel in a manner of surrounding a central portion of the first face in a cross section, a ring-shaped flow path being formed inside the ring-shaped protruding portion, a plurality of air holes being formed in the ring-shaped protruding portion that communicate with the ring-shaped flow path and open toward the inside of the processing vessel, the cover member being formed with a supply port that communicates with the ring-shaped flow path in the second face; and a remote plasma unit that is connected to the supply port, plasmaizes a cleaning gas, and supplies the plasmaized cleaning gas to the supply port.

2. The plasma processing apparatus according to claim 1, wherein the cover member is formed with an inclined face that inclines toward the inside of the processing vessel in the ring-shaped protruding portion with respect to the central portion of the first face surrounded by the ring-shaped protruding portion, and the plurality of air holes are formed in the inclined face.

3. The plasma processing apparatus according to claim 2, wherein the cover member is formed with the plurality of air holes in at least two directions for each direction in an array with respect to the inclined face.

4. The plasma processing apparatus according to claim 2 or 3, wherein the cover member is formed with a step in an inner wall on the first face side of the ring-shaped flow path, and the plurality of air holes are formed to respectively penetrate two faces that constitute the step in two directions for each direction with respect to the inclined face.

5. The plasma processing apparatus according to any one of claims 1 to 3, wherein the cover member is formed with a central flow path that communicates with the ring-shaped flow path inside the central portion of the first face surrounded by the ring-shaped protruding portion, and the plurality of air holes are formed in the central portion that communicate with the central flow path.

6. The plasma processing apparatus according to any one of claims 1 to 3, wherein the cover member is configured to change intervals of the plurality of air holes in a manner of uniformly ejecting the plasmaized cleaning gas supplied to the supply port from the plurality of air holes toward the inside of the processing vessel.

7. The plasma processing apparatus according to any one of claims 1 to 3, wherein the cover member is configured to be denser on a side opposite to the supply port side than on the supply port side with respect to the plurality of air holes.

8. The plasma processing apparatus according to any one of claims 1 to 3, wherein a diameter of the plurality of air holes on the first face side is formed to be larger. ​ 9. A lid member that seals an opening of a processing container that is internally provided with a stage on which a substrate is placed, the processing container being formed with the opening on an upper side of the stage, wherein the lid member has: a first surface that is an inner side of the processing container; a second surface that is an outer side of the processing container; one or a plurality of through holes that are formed in a region opposite the stage for providing a microwave radiating portion; a ring-shaped protruding portion that protrudes downward from a rim of the lid member, the ring-shaped protruding portion protruding toward the inner side of the processing container in a manner that surrounds a central portion of the first surface in a cross section; a ring-shaped flow path that is formed inside the ring-shaped protruding portion; a plurality of air holes that are formed in the ring-shaped protruding portion, the plurality of air holes being in communication with the ring-shaped flow path and opening toward the inner side of the processing container; and a supply port that is formed in the second surface and is in communication with the ring-shaped flow path. ​

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