High frequency module and communication device

Abstract

The high-frequency module (1A) comprises: a module substrate (91) having a main surface (91a); a first circuit component and a second circuit component arranged on the main surface (91a); a resin member (92) covering the first circuit component and the second circuit component; a metal shielding layer (95) covering the surface of the resin member (92); a metal shielding plate (70) arranged on the main surface (91a) and arranged between the first circuit component and the second circuit component when the module substrate (91) is viewed from above; and a via conductor (96) formed inside the module substrate (91) and set to a ground potential. The metal shielding plate (70) is in contact with the metal shielding layer (95) and is connected to the via conductor (96) on the main surface (91a). The thickness (70t) of the metal shielding plate (70) is greater than the thickness (95t) of the metal shielding layer (95) and is less than the outer diameter (96d) of the via conductor (96).

Description

Technical Field

[0001] The present invention relates to a high-frequency module and a communication device. Background Art

[0002] In mobile communication devices such as cellular phones, the arrangement structure of circuit elements constituting high-frequency front-end circuits has become increasingly complex, particularly with the advancement of multi-band technology.

[0003] Patent Document 1 discloses a circuit structure for a transceiver (transceiver circuit) comprising multiple transmitters (transmit paths) and multiple receivers (receive paths), and a switch duplexer (antenna switch) disposed between the multiple transmitters and receivers and an antenna. Each of the multiple transmitters includes a transmit circuit, a PA (transmit power amplifier), and an output circuit, while each of the multiple receivers includes a receive circuit, an LNA (receive low-noise amplifier), and an input circuit. The output circuit includes a transmit filter, an impedance matching circuit, and a duplexer, while the input circuit includes a receive filter, an impedance matching circuit, and a duplexer. This structure enables simultaneous transmission, simultaneous reception, or simultaneous transmission and reception through the switching action of the switch duplexer.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application No. 2014-522216 Summary of the Invention

[0007] Problems to be solved by the invention

[0008] However, when the transceiver (transceiver circuit) disclosed in Patent Document 1 is constructed from a high-frequency module installed in a mobile communication device, it is conceivable that at least two of the circuit components configured in each of the transmit and receive paths, including the transmit path, receive path, and antenna switch, will experience electromagnetic field coupling. In this case, the harmonic components of the high-output transmit signal amplified by the PA (transmit power amplifier) ​​are superimposed on the transmit signal, potentially degrading the transmit signal quality. Furthermore, this electromagnetic field coupling reduces the isolation between the transmitter and receiver, and unwanted waves, such as the harmonics or intermodulation distortion between the transmit signal and other high-frequency signals, may flow into the receive path, degrading receive sensitivity. Furthermore, this electromagnetic field coupling may cause the two receive signals to interfere with each other, potentially degrading receive sensitivity.

[0009] The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a high-frequency module and a communication device that suppress degradation in the quality of a transmission signal or a reception signal.

[0010] Technical solutions to solve problems

[0011] A high-frequency module according to one embodiment of the present invention comprises: a module substrate having a main surface; a first circuit component and a second circuit component arranged on the main surface; a resin member covering the main surface and at least a portion of the first circuit component and the second circuit component; a metal shield layer covering the surface of the resin member and set to a ground potential; a metal shield plate arranged on the main surface and, when viewed from above, between the first circuit component and the second circuit component; and a via conductor formed within the module substrate, extending in a direction intersecting the main surface and set to a ground potential, the metal shield plate being in contact with the metal shield layer and connected to the via conductor on the main surface, the metal shield plate having a thickness greater than that of the metal shield layer and less than or equal to the outer diameter of the via conductor.

[0012] Effects of the Invention

[0013] According to the present invention, a high-frequency module and a communication device can be provided in which degradation in the quality of a transmission signal or a reception signal is suppressed. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a circuit configuration diagram of a high-frequency module and a communication device according to an embodiment.

[0015] Figure 2 These are a plan view and a cross-sectional view of the high-frequency module according to the first embodiment.

[0016] Figure 3A This is a perspective view showing the appearance of a first example of a metal shield plate.

[0017] Figure 3B This is a perspective view showing the appearance of a second example of a metal shield plate.

[0018] Figure 3C This is a perspective view showing the appearance of a third example of the metal shield plate.

[0019] Figure 4 It is a cross-sectional view showing a first modification of the via-hole conductor.

[0020] Figure 5 It is a cross-sectional view showing a second modification of the via-hole conductor.

[0021] Figure 6 These are a plan view and a cross-sectional view of a high-frequency module according to the second embodiment. DETAILED DESCRIPTION

[0022] Hereinafter, embodiments of the present invention will be described in detail. In addition, the embodiments described below show general or specific examples. In addition, the numerical values, shapes, materials, components, configurations of components, and connection methods shown in the following embodiments, examples, and modifications are examples, and their purpose is not to limit the present invention. In addition, among the components in the following embodiments and modifications, the components that are not described in the independent claims are described as arbitrary components. In addition, the sizes or size ratios of the components shown in the drawings are not necessarily rigorous. In each figure, the same figure numerals are marked for substantially the same structures, and repeated descriptions are sometimes omitted or simplified.

[0023] In the following, terms such as parallel and perpendicular indicating the relationship between elements, and terms such as rectangular indicating the shape of an element, and numerical ranges do not have strict meanings but mean substantially equivalent ranges and include, for example, differences of several percent.

[0024] In the following figures, the x-axis and y-axis are axes perpendicular to each other on a plane parallel to the main surface of the module substrate. The z-axis is an axis perpendicular to the main surface of the module substrate, with its positive direction indicating the upward direction and its negative direction indicating the downward direction.

[0025] In the circuit structure of this disclosure, the term "connected" includes not only direct connection via connection terminals and / or wiring conductors, but also electrical connection via other circuit components. Furthermore, the term "connected between A and B" means connection between A and B and between both A and B.

[0026] In addition, in the module structure disclosed in the present invention, the so-called "looking down" means observing the object by projecting it onto the xy plane from the positive side of the z-axis. The so-called "components are arranged on the main surface of the substrate", in addition to including the case where the components are arranged on the main surface in a state of contact with the main surface of the substrate, also includes the case where the components are arranged above the main surface without contacting the main surface, and the case where a part of the component is buried in the substrate from the main surface side. The so-called "A is arranged between B and C" means that at least one of the multiple line segments connecting an arbitrary point in B and an arbitrary point in C passes through A. In addition, terms such as "parallel" and "perpendicular" that indicate the relationship between elements, and terms such as "rectangular" that indicate the shape of an element do not only have strict meanings, but also mean a substantially equivalent range, for example, including an error of several percent.

[0027] In the following, the term "transmit path" refers to a transmission line comprising wiring that transmits high-frequency transmit signals, electrodes directly connected to the wiring, and terminals directly connected to the wiring or electrodes. Furthermore, the term "receive path" refers to a transmission line comprising wiring that transmits high-frequency receive signals, electrodes directly connected to the wiring, and terminals directly connected to the wiring or electrodes. Furthermore, the term "transmit / receive path" refers to a transmission line comprising wiring that transmits both high-frequency transmit and receive signals, electrodes directly connected to the wiring, and terminals directly connected to the wiring or electrodes.

[0028] (Implementation Method)

[0029] [1. Circuit Configuration of High-Frequency Module 1 and Communication Device 5]

[0030] Figure 1 1 is a circuit diagram of a high-frequency module 1 and a communication device 5 according to an embodiment. As shown in the figure, the communication device 5 includes a high-frequency module 1, an antenna 2, an RF signal processing circuit (RFIC) 3, and a baseband signal processing circuit (BBIC) 4.

[0031] RFIC3 is an RF signal processing circuit that processes high-frequency signals transmitted and received by antenna 2. Specifically, RFIC3 processes the high-frequency receive signal input via the receive signal path of high-frequency module 1 through down-conversion and other methods, and outputs the resulting receive signal to BBIC4. RFIC3 also processes the transmit signal input from BBIC4 through up-conversion and other methods, and outputs the resulting high-frequency transmit signal to the transmit signal path of high-frequency module 1.

[0032] BBIC 4 is a circuit that performs signal processing using an intermediate frequency band lower than the high frequency signal propagating through high frequency module 1. The signal processed by BBIC 4 is used as an image signal for image display or as an audio signal for communication via a speaker.

[0033] RFIC3 also functions as a control unit that controls the connection of switches 40, 41, and 42 of high-frequency module 1 based on the communication frequency band used. Specifically, RFIC3 switches the connection of switches 40 to 42 of high-frequency module 1 using a control signal (not shown). Specifically, RFIC3 outputs a digital control signal for controlling switches 40 to 42 to PA control circuit 15. Based on the digital control signal input from RFIC3, PA control circuit 15 of high-frequency module 1 outputs a digital control signal to switches 40 to 42, thereby controlling whether switches 40 to 42 are connected or disconnected.

[0034] RFIC3 also functions as a control unit to control the gain of the power amplifier 10 included in the high-frequency module 1, as well as the power supply voltage Vcc and bias voltage Vbias supplied to the power amplifier 10. Specifically, RFIC3 outputs a digital control signal to the control signal terminal 130 of the high-frequency module 1. Based on the digital control signal input via the control signal terminal 130, the PA control circuit 15 outputs a control signal, power supply voltage Vcc, or bias voltage Vbias to the power amplifier 10, thereby adjusting the gain of the power amplifier 10. Alternatively, the control unit may be provided external to RFIC3, for example, within BBIC4.

[0035] The antenna 2 is connected to the antenna connection terminal 100 of the high-frequency module 1 , radiates a high-frequency signal output from the high-frequency module 1 , and receives a high-frequency signal from the outside and outputs the signal to the high-frequency module 1 .

[0036] In addition, in the communication device 5 according to this embodiment, the antenna 2 and the BBIC 4 are not essential components.

[0037] Next, the detailed structure of the high-frequency module 1 will be described.

[0038] like Figure 1 As shown, the high-frequency module 1 includes a power amplifier 10, a low-noise amplifier 20, a PA control circuit 15, transmit filters 31 and 33, receive filters 32 and 34, matching circuits 50, 51, 52, 53 and 54, switches 40, 41 and 42, an antenna connection terminal 100, a transmit input terminal 110, a receive output terminal 120, and a control signal terminal 130.

[0039] Antenna connection terminal 100 is connected to antenna 2. Transmission input terminal 110 is a terminal for receiving a transmission signal from outside (RFIC 3) of high frequency module 1. Reception output terminal 120 is a terminal for supplying a reception signal to outside (RFIC 3) of high frequency module 1.

[0040] The power amplifier 10 is a transmission amplifier that amplifies transmission signals in the communication bands A and B. An input terminal of the power amplifier 10 is connected to the transmission input terminal 110 , and an output terminal of the power amplifier 10 is connected to matching circuits 51 and 53 via a switch 41 .

[0041] The low noise amplifier 20 is a receiving amplifier that amplifies, with low noise, received signals in the communication bands A and B. The input terminal of the low noise amplifier 20 is connected to the matching circuits 52 and 54 via the switch 42 , and the output terminal of the low noise amplifier 20 is connected to the reception output terminal 120 .

[0042] The PA control circuit 15 adjusts the gain of the power amplifier 10 based on a digital control signal MIPI input via the control signal terminal 130 . Alternatively, the PA control circuit 15 may be formed by a semiconductor IC (Integrated Circuit). For example, the semiconductor IC includes a CMOS (Complementary Metal Oxide Semiconductor). Specifically, it is formed using an SOI (Silicon On Insulator) process. This allows for inexpensive manufacturing of the semiconductor IC. Furthermore, the semiconductor IC may include at least one of GaAs, SiGe, and GaN. This enables the output of a high-frequency signal with high-quality amplification and noise performance.

[0043] The transmission filter 31 is arranged in the transmission path AT connecting the power amplifier 10 and the switch 40, and passes the transmission signal in the transmission band of the communication frequency band A among the transmission signals amplified by the power amplifier 10. Furthermore, the transmission filter 33 is arranged in the transmission path BT connecting the power amplifier 10 and the switch 40, and passes the transmission signal in the transmission band of the communication frequency band B among the transmission signals amplified by the power amplifier 10.

[0044] The reception filter 32 is arranged in the reception path AR connecting the low-noise amplifier 20 and the switch 40, and passes the reception signal in the reception band of the communication frequency band A among the reception signals input from the antenna connection terminal 100. Furthermore, the reception filter 34 is arranged in the reception path BR connecting the low-noise amplifier 20 and the switch 40, and passes the reception signal in the reception band of the communication frequency band B among the reception signals input from the antenna connection terminal 100.

[0045] The transmission filters 31 and 33 and the reception filters 32 and 34 may be, for example, surface acoustic wave filters, elastic wave filters using BAW (Bulk Acoustic Wave), LC resonant filters, and dielectric filters, but are not limited thereto.

[0046] The transmission filter 31 and the reception filter 32 constitute a duplexer 30 having a passband in the communication band A. The transmission filter 33 and the reception filter 34 constitute a duplexer 35 having a passband in the communication band B.

[0047] Furthermore, each of the duplexers 30 and 35 may be a filter that transmits data in a time division duplex (TDD) manner. In this case, a switch that switches between transmission and reception is provided at least in the preceding and following stages of the filter.

[0048] Matching circuit 50 is located in the transceiver path CTR connecting antenna connection terminal 100 and switch 40, achieving impedance matching between antenna 2, switch 40, and duplexers 30 and 35. Matching circuit 50 includes at least one inductor. Matching circuit 50 can be located in series with transceiver path CTR or connected between transceiver path CTR and ground.

[0049] Matching circuit 51 is disposed in transmission path AT connecting power amplifier 10 and transmission filter 31 to achieve impedance matching between power amplifier 10 and transmission filter 31. Matching circuit 51 includes at least one inductor. Matching circuit 51 can be disposed in series with transmission path AT or connected between transmission path AT and ground.

[0050] Matching circuit 53 is disposed in transmission path BT connecting power amplifier 10 and transmission filter 33 to achieve impedance matching between power amplifier 10 and transmission filter 33. Matching circuit 53 includes at least one inductor. Matching circuit 53 can be disposed in series with transmission path BT or connected between transmission path BT and ground.

[0051] Matching circuit 52 is disposed in the receive path AR connecting low-noise amplifier 20 and receive filter 32 to achieve impedance matching between low-noise amplifier 20 and receive filter 32. Matching circuit 52 includes at least one inductor. Matching circuit 52 can be disposed in series with receive path AR or connected between receive path AR and ground.

[0052] Matching circuit 54 is disposed in receive path BR connecting low-noise amplifier 20 and receive filter 34 to achieve impedance matching between low-noise amplifier 20 and receive filter 34. Matching circuit 54 includes at least one inductor. Matching circuit 54 can be disposed in series with receive path BR or connected between receive path BR and ground.

[0053] Furthermore, a matching circuit may be provided in the transmission path between the power amplifier 10 and the switch 41 instead of or in addition to the matching circuits 51 and 53 .

[0054] The switch 40 includes a common terminal 40a, and selection terminals 40b and 40c. The common terminal 40a is connected to the antenna connection terminal 100 via the matching circuit 50, the selection terminal 40b is connected to the duplexer 30, and the selection terminal 40c is connected to the duplexer 35. Specifically, the switch 40 is an antenna switch disposed between the antenna connection terminal 100 and the duplexers 30 and 35, and (1) switches between connection and disconnection between the antenna connection terminal 100 and the duplexer 30, and (2) switches between connection and disconnection between the antenna connection terminal 100 and the duplexer 35. Furthermore, the switch 40 is configured as a multi-connection type switch circuit capable of simultaneously performing the aforementioned connections (1) and (2).

[0055] Alternatively, a matching circuit may be provided in the reception path between the low-noise amplifier 20 and the switch 42 instead of the matching circuits 52 and 54 or in addition to the matching circuits 52 and 54 .

[0056] Furthermore, instead of or in addition to the matching circuit 50 , a matching circuit may be provided in the transmission / reception path connecting the switch 40 and the duplexer 30 and the transmission / reception path connecting the switch 40 and the duplexer 35 .

[0057] Switch 41 has a common terminal 41a and select terminals 41b and 41c. It is arranged in a transmission path connecting power amplifier 10 and transmit filters 31 and 33, and switches between the connection between power amplifier 10 and transmit filter 31, and between the connection between power amplifier 10 and transmit filter 33. Switch 41 is configured, for example, as a single-pole double-throw (SPDT) switch circuit, in which common terminal 41a is connected to the output terminal of power amplifier 10, select terminal 41b is connected to transmit filter 31 via matching circuit 51, and select terminal 41c is connected to transmit filter 33 via matching circuit 53.

[0058] Switch 42 includes a common terminal 42a and select terminals 42b and 42c. It is arranged in a reception path connecting low-noise amplifier 20 and receive filters 32 and 34, and switches between the connection between low-noise amplifier 20 and receive filter 32, and between the connection between low-noise amplifier 20 and receive filter 34. Switch 42 is configured, for example, as an SPDT-type switch circuit, in which common terminal 42a is connected to an input terminal of low-noise amplifier 20, select terminal 42b is connected to receive filter 32 via matching circuit 52, and select terminal 42c is connected to receive filter 34 via matching circuit 54.

[0059] Furthermore, the transmission path AT is a signal path that transmits a transmission signal in communication band A and connects the transmission input terminal 110 to the common terminal 40a of the switch 40. Furthermore, the transmission path BT is a signal path that transmits a transmission signal in communication band B and connects the transmission input terminal 110 to the common terminal 40a of the switch 40. Furthermore, the reception path AR is a signal path that transmits a reception signal in communication band A and connects the reception output terminal 120 to the common terminal 40a of the switch 40. Furthermore, the reception path BR is a signal path that transmits a reception signal in communication band B and connects the reception output terminal 120 to the common terminal 40a of the switch 40. Furthermore, the transceiver path CTR is a signal path that transmits and receives signals in communication band A and transmits and receives signals in communication band B and connects the antenna connection terminal 100 to the common terminal 40a of the switch 40.

[0060] In the high-frequency module 1 having the above-described circuit configuration, the power amplifier 10, the switch 41, the matching circuit 51, and the transmit filter 31 constitute a first transmit circuit that outputs a transmit signal in communication frequency band A toward the antenna connection terminal 100. Furthermore, the power amplifier 10, the switch 41, the matching circuit 53, and the transmit filter 33 constitute a second transmit circuit that outputs a transmit signal in communication frequency band B toward the antenna connection terminal 100.

[0061] The low-noise amplifier 20, the switch 42, the matching circuit 52, and the reception filter 32 constitute a first reception circuit into which a reception signal in communication band A is input from the antenna 2 via the antenna connection terminal 100. Furthermore, the low-noise amplifier 20, the switch 42, the matching circuit 54, and the reception filter 34 constitute a second reception circuit into which a reception signal in communication band B is input from the antenna 2 via the antenna connection terminal 100.

[0062] According to the above-mentioned circuit structure, the high-frequency module 1 involved in this embodiment is capable of performing at least any one of (1) transmission and reception of high-frequency signals in communication frequency band A, (2) transmission and reception of high-frequency signals in communication frequency band B, and (3) simultaneous transmission, simultaneous reception, or simultaneous transmission and reception of high-frequency signals in communication frequency band A and high-frequency signals in communication frequency band B.

[0063] Furthermore, in the high-frequency module according to the present invention, the transmitting circuit and the receiving circuit may be connected to the antenna connection terminal 100 without passing through the switch 40, and the transmitting circuit and the receiving circuit may be connected to the antenna 2 via different terminals. Furthermore, the circuit configuration of the high-frequency module according to the present invention only requires a transmitting path, a receiving path, and at least two of the transmitting and receiving paths, and matching circuits configured for each of the two paths. Furthermore, the module only requires either the first transmitting circuit or the second transmitting circuit. Furthermore, the module only requires either the first receiving circuit or the second receiving circuit.

[0064] In a high-frequency module 1 having the above-described circuit configuration, if electromagnetic field coupling occurs between at least two of the circuit components arranged in the transmit path, receive path, or transmit / receive path, the harmonic components of the high-output transmit signal amplified by the power amplifier may be superimposed on the transmit signal, degrading the transmit signal quality. Furthermore, this electromagnetic field coupling reduces the isolation between the transmit and receive signals, and unwanted waves such as the harmonics or cross-modulation distortion between the transmit signal and other high-frequency signals may flow into the receive path, degrading receive sensitivity. Furthermore, this electromagnetic field coupling may cause the two receive signals to interfere with each other, degrading receive sensitivity.

[0065] In contrast, the high-frequency module 1 according to the present embodiment has a structure for suppressing the above-mentioned electromagnetic field coupling. Hereinafter, the structure for suppressing the above-mentioned electromagnetic field coupling of the high-frequency module 1 according to the present embodiment will be described.

[0066] [2. Circuit Component Arrangement Structure of High-Frequency Module 1A According to Embodiment 1]

[0067] Figure 2 1A and 1B are a plan view and a cross-sectional view of a high-frequency module 1A according to the first embodiment. Figure 2 (a) shows the arrangement of the circuit components when the main surface 91a of the module substrate 91 is viewed from the positive z-axis direction side. Figure 2 (b) shows Figure 2 The high frequency module 1A specifically shows the arrangement structure of each circuit component constituting the high frequency module 1 according to the embodiment. Figure 2 (a) shows the external connection terminals 150 and the ground terminals 150 g arranged on the main surface 91 b of the module substrate 91 by dotted lines.

[0068] like Figure 2 As shown, the high-frequency module 1A of this embodiment has Figure 1 In addition to the circuit structure shown, the module further includes a module substrate 91 , a metal shield plate 70 , a metal shield layer 95 , a via conductor 96 , a resin member 92 , and external connection terminals 150 .

[0069] The module substrate 91 is a substrate on which the first and second transmitting circuits and the first and second receiving circuits are mounted on its main surface 91a. For example, a low-temperature co-fired ceramic (LTCC) substrate, a high-temperature co-fired ceramic (HTCC) substrate with a laminated structure of multiple dielectric layers, a component-embedded substrate, a substrate with a redistribution layer (RDL), or a printed circuit board can be used as the module substrate 91. Antenna connection terminals 100, transmission input terminals 110, reception output terminals 120, and control signal terminals 130 may also be formed on the module substrate 91.

[0070] The resin component 92 is arranged on the main surface 91a of the module substrate 91, covering at least a portion of the circuit components constituting the first transmitting circuit and the second transmitting circuit and the first receiving circuit and the second receiving circuit and the main surface 91a of the module substrate 91, and has the function of ensuring the reliability of the mechanical strength and moisture resistance of the above-mentioned circuit components.

[0071] The external connection terminals 150 are arranged on the main surface 91b of the module substrate 91. The high-frequency module 1A exchanges electrical signals with the external substrate arranged on the negative side of the z-axis of the high-frequency module 1A via the plurality of external connection terminals 150. In addition, the ground terminal 150g among the plurality of external connection terminals 150 is set to the ground potential of the external substrate. Figure 2 As shown, the external connection terminal 150 may be a planar electrode formed on the main surface 91 b , or may be a bump electrode formed on the main surface 91 b .

[0072] The metal shield layer 95 covers the surface of the resin member 92 and is set to the ground potential. The metal shield layer 95 is a metal thin film formed by, for example, sputtering.

[0073] Via-hole conductor 96 is formed within module substrate 91 and extends in a direction intersecting main surface 91a. Via-hole conductor 96 is set to the ground potential of high-frequency module 1A. In this embodiment, via-hole conductor 96 extends in a direction perpendicular to main surface 91a and penetrates module substrate 91.

[0074] The metal shielding plate 70 is a metal wall body erected from the main surface 91a toward the top surface of the resin member 92 on the positive side of the z-axis. The metal shielding plate 70 is connected to the via-hole conductor 96 on the main surface 91a. In addition, the metal shielding plate 70 is connected to the metal shielding layer 95. In addition, the metal shielding plate 70 can be connected to the shielding surface that is connected to the top surface of the resin member 92 among the shielding surfaces constituting the metal shielding layer 95, and can also be connected to the shielding surface that is connected to the side surface of the resin member 92. In addition, the metal shielding plate 70 and the via-hole conductor 96 can be directly connected, and can also be connected as shown in FIG. Figure 2 As shown in FIG. 15( b ), the ground terminals 150 g are connected via the ground electrode 94 formed on the main surface 91 a . The via-hole conductor 96 connected to the metal shield plate 70 is connected to the ground terminal 150 g .

[0075] Here, when looking down at the module substrate 91, the metal shield plate 70 and the ground terminal 150g connected to the metal shield plate 70 overlap. This allows the metal shield plate 70 to be connected to the ground terminal 150g at the shortest distance through the via conductor 96, thereby suppressing parasitic inductance between the metal shield plate 70 and the ground terminal 150g. This strengthens the grounding of the metal shield plate 70 and enhances the shielding effect.

[0076] Alternatively, the via-hole conductor 96 may be a through-hole conductor having one end connected to the metal shield plate 70 and the other end connected to the ground terminal 150 g .

[0077] This further suppresses parasitic inductance, strengthens the grounding of the metal shield plate 70 , and further enhances the shielding effect.

[0078] In addition, if Figure 2 As shown in (a), when looking down at the module substrate 91, the area of ​​the portion where the metal shield plate 70 overlaps with the (four) ground terminals 150g is preferably larger than the area of ​​the portion where the metal shield plate 70 does not overlap with the (four) ground terminals 150g.

[0079] This further suppresses parasitic inductance, strengthens the grounding of the metal shield plate 70 , and further enhances the shielding effect.

[0080] According to the above structure of the metal shielding plate 70, the metal shielding plate 70 is connected to the ground at least at two locations above and below it, thereby enhancing the electromagnetic field shielding function. Figure 3A to Figure 3C Described later.

[0081] Here, if Figure 2 As shown, the thickness 70 t of the metal shield plate 70 is greater than the thickness 95 t of the metal shield layer 95 and is smaller than the outer diameter 96 d of the via-hole conductor 96 .

[0082] Furthermore, the metal shield plate 70 divides the main surface 91a into a region P and a region Q. Figure 2 As shown in (a), the power amplifier 10, matching circuits 51 and 53, and switch 41 are examples of first circuit components and are arranged in region P of the main surface 91a. Furthermore, the low-noise amplifier 20, duplexers 30 and 35, matching circuits 50, 52, and 54, and switches 40 and 42 are examples of second circuit components and are arranged in region Q of the main surface 91a. Matching circuit 51 is arranged in the transmission path AT connecting the transmission input terminal 110 and the common terminal 40a of the switch 40 and includes a first inductor. Furthermore, matching circuit 52 is arranged in the reception path AR connecting the reception output terminal 120 and the common terminal 40a of the switch 40 and includes a second inductor.

[0083] That is, the metal shield plate 70 is disposed on the main surface 91 a and, in a plan view of the module substrate 91 , is disposed between the first circuit component and the second circuit component.

[0084] In this embodiment, the first circuit component is a circuit component arranged in the transmission path AT or BT, and the second circuit component is a circuit component arranged in the reception path AR, BR or the transceiver path CTR.

[0085] Alternatively, the first circuit component arranged in the region P may be a circuit component arranged in the reception path AR or BR, and the second circuit component arranged in the region Q may be a circuit component arranged in the transmission path AT, BT or the transceiver path CTR.

[0086] Alternatively, the first circuit component arranged in the region P may be a circuit component arranged in the transmission / reception path CTR, and the second circuit component arranged in the region Q may be a circuit component arranged in the transmission path AT, BT, or the reception path AR or BR.

[0087] The above configuration can suppress electromagnetic field coupling between at least two of the circuit components arranged in each of the transmission path, reception path, and transceiver path. In this case, the thickness 70t of the metal shield plate 70 is greater than the thickness 95t of the metal shield layer 95. This improves the ability to prevent high-frequency noise generated in the circuit components of the high-frequency module 1A from flowing into other circuit components within the high-frequency module 1A, rather than the ability to shield external noise. Furthermore, the outer diameter 96d of the via-hole conductor 96 is greater than the thickness 70t of the metal shield plate 70. If the outer diameter 96d of the via-hole conductor 96 were smaller than the thickness 70t of the metal shield plate 70, the potential of the metal shield plate 70 could not be reliably set to the ground of the high-frequency module 1A. In contrast, this configuration strengthens the grounding of the metal shield plate 70. Consequently, strong signal interference between two adjacent circuit components can be suppressed, thereby improving the isolation between the transmission path, reception path, and transceiver path, and accurately suppressing degradation in the quality of transmitted and received signals.

[0088] Furthermore, in this embodiment, in particular, the first circuit component may be a first inductor, and the second circuit component may be a second inductor.

[0089] This can suppress electromagnetic field coupling between the first inductor and the second inductor, thereby preventing unnecessary waves such as the high-output transmission signal amplified by the power amplifier, its harmonics, or intermodulation distortion between the transmission signal and other high-frequency signals from flowing into the reception path and degrading the reception sensitivity.

[0090] Furthermore, in this embodiment, in particular, the first circuit component may be the power amplifier 10 and the second circuit component may be the low-noise amplifier 20 .

[0091] This can suppress electromagnetic field coupling between the power amplifier 10 and the low-noise amplifier 20, thereby suppressing unnecessary waves such as the high-output transmission signal amplified by the power amplifier, its harmonics, or intermodulation distortion between the transmission signal and other high-frequency signals from flowing into the receiving path and degrading the receiving sensitivity.

[0092] Furthermore, in the high-frequency module 1A according to this embodiment, the low-noise amplifier 20 and the switch 42 may be included in a single semiconductor IC 60. This reduces the component mounting area on the main surface 91a. Consequently, the high-frequency module 1A can be miniaturized. Furthermore, the semiconductor IC 60 may include at least one of the switches 40 and 41.

[0093] [3. Structure of Metal Shield]

[0094] Next, the structure of the metal shield plate 70 included in the high-frequency module 1A according to this embodiment will be described.

[0095] Figure 3A This is a perspective view of the exterior appearance of a metal shield plate 70A. The metal shield plate 70A shown in this figure is an example of the metal shield plate 70 according to Example 1. The metal shield plate 70A is erected from a main surface 91a (not shown) toward the top surface (in the z-axis direction) of a resin member 92 (not shown). A hole 72 is formed between the metal shield plate 70A and the main surface 91a, extending through the metal shield plate 70A in the normal direction (in the x-axis direction).

[0096] In addition, the metal shielding plate 70A has a main body portion 71 and a joint portion 73, wherein the main body portion 71 is upright from the main surface 91a toward the top surface of the resin member 92 (in the z-axis direction), and the joint portion 73 extends parallel to the main surface 91a on the side of the main surface 91a and is joined to the ground electrode (not shown) on the main surface 91a.

[0097] The structure of the metal shield 70A includes a hole 72 formed between the main body 71 and the main surface 91a. This ensures good fluidity of the liquid resin near the metal shield 70A during the process of forming the resin member 92 on the main surface 91a. This prevents the formation of gaps near the metal shield 70A where the resin member 92 is not formed. Furthermore, the metal shield 70A and the main surface 91a are joined by the joint 73, improving the accuracy of the metal shield 70A's placement and the strength of the joint between the metal shield 70A and the main surface 91a.

[0098] Figure 3B This is a perspective view of the appearance of a metal shield plate 70B. The metal shield plate 70B shown in this figure is an example of the metal shield plate 70 according to Example 1. The metal shield plate 70B is erected from a main surface 91a (not shown) toward the top surface (in the z-axis direction) of a resin member 92 (not shown). A hole 72 is formed between the metal shield plate 70B and the top surface of the resin member 92, extending in the normal direction (in the x-axis direction) of the metal shield plate 70B.

[0099] In addition, the metal shielding plate 70B has a main body portion 71 and a joint portion 73, wherein the main body portion 71 is upright from the main surface 91a toward the top surface of the resin member 92 (in the z-axis direction), and the joint portion 73 extends parallel to the main surface 91a on the side of the main surface 91a and is joined to the ground electrode (not shown) on the main surface 91a.

[0100] Due to the structure of the metal shield plate 70B, holes 72 are formed between the main body 71 and the aforementioned top surface. This ensures good fluidity of the liquid resin near the metal shield plate 70B during the process of forming the resin member 92 on the main surface 91a. This prevents the formation of gaps near the metal shield plate 70B where the resin member 92 is not formed. Furthermore, since holes 72 are not formed in the area contacting the main surface 91a (the area below the main body 71), isolation between circuit components arranged on the main surface 91a via the metal shield plate 70B is improved. Furthermore, since the metal shield plate 70B and the main surface 91a are bonded together by the bonding portion 73, the placement accuracy of the metal shield plate 70B and the bonding strength between the metal shield plate 70B and the main surface 91a are improved.

[0101] Figure 3C This is a perspective view of the exterior appearance of a metal shield plate 70C. The metal shield plate 70C shown in this figure is an example of the metal shield plate 70 according to Example 1. The metal shield plate 70C is erected from a main surface 91a (not shown) toward the top surface (in the z-axis direction) of a resin member 92 (not shown). A hole 72 is formed between the main surface 91a and the top surface of the resin member 92, extending through the metal shield plate 70C in the normal direction (in the x-axis direction).

[0102] The metal shield plate 70C also includes a main body portion 71 and a joint portion 73. The main body portion 71 extends upright from the main surface 91a toward the top surface of the resin member 92 (in the z-axis direction). The joint portion 73 extends parallel to the main surface 91a on the main surface 91a side and is joined to the ground electrode (not shown) on the main surface 91a. In the metal shield plate 70C, a plurality of main bodies 71 are discretely arranged with holes 72 therebetween, and a plurality of joint portions 73 are discretely arranged with holes 72 therebetween.

[0103] Due to the structure of the metal shield plate 70C, the holes 72 are formed between the main surface 91a and the aforementioned top surface. This ensures good fluidity of the liquid resin near the metal shield plate 70C during the process of forming the resin member 92 on the main surface 91a. This prevents the formation of gaps near the metal shield plate 70C where the resin member 92 is not formed. Furthermore, the metal shield plate 70C and the main surface 91a are joined by the joint 73, thereby improving the accuracy of the metal shield plate 70C's placement and the strength of the joint between the metal shield plate 70C and the main surface 91a.

[0104] In addition, the structure of the metal shield plate 70 is not limited to the metal shield plates 70A to 70C described above. For example, a plurality of holes 72 may be arranged from the main surface 91a toward the top surface. In addition, the direction in which the joint portion 73 is extended is not limited to the direction in which the joint portion 73 is extended. Figure 3A to Figure 3CThe negative x-axis direction shown may be the positive x-axis direction. Furthermore, the metal shield plate 70 may include both the joint portion 73 extending in the negative x-axis direction and the joint portion 73 extending in the positive x-axis direction.

[0105] [4. Structure of Via-Hole Conductor According to Modification Example]

[0106] In addition, the structure of the via-hole conductor 96 is not limited to the Figure 2 The structure shown is a through-hole structure from the main surface 91a to the main surface 91b.

[0107] Figure 4 This is a cross-sectional view showing a first variation of via-hole conductor 96. As shown, via-hole conductor 96 has a structure in which multiple columnar conductors 96a, 96b, and 96c extending in the normal direction to main surfaces 91a and 91b are connected in cascade, with their centroids offset in the normal direction. Furthermore, the formation region A1 of columnar conductor 96a, located closest to the positive z-axis on module substrate 91, and the formation region A3 of columnar conductor 96c, located closest to the negative z-axis on module substrate 91, may not overlap when viewed from above. In other words, the via-hole conductor 96 according to this variation may not have a region that overlaps with the columnar conductors 96a to 96c when viewed from above. Furthermore, columnar conductors 96a and 96b are connected via a conductor pattern 96P extending in the y-axis direction within module substrate 91 , and columnar conductors 96b and 96c are connected via a conductor pattern 96P extending in the y-axis direction within module substrate 91 .

[0108] Figure 5 This is a cross-sectional view showing a second variation of via-hole conductor 96. As shown in the figure, via-hole conductor 96 has a structure in which multiple columnar conductors 96a, 96b1, 96b2, 96b3, 96c1, and 96c2, extending in the normal direction to main surfaces 91a and 91b, are cascade-connected in this normal direction. Specifically, columnar conductor 96a is arranged on the first layer of module substrate 91 closest to main surface 91a; columnar conductors 96c1 and 96c2 are arranged on the third layer of module substrate 91 closest to main surface 91b; and columnar conductors 96b1, 96b2, and 96b3 are arranged on the second layer between the first and third layers. Columnar conductor 96a and columnar conductors 96b1, 96b2, and 96b3 are connected by a conductor pattern 96P formed between the first and second layers. Furthermore, the columnar conductors 96b1, 96b2, and 96b3 and the columnar conductors 96c1 and 96c2 are connected via a conductor pattern 96P formed between the second layer and the third layer.

[0109] Here, the total number of columnar conductors 96b1, 96b2, and 96b3 arranged on the second layer and columnar conductors 96c1 and 96c2 arranged on the third layer (five in this example) is greater than the number of columnar conductors 96a arranged on the first layer and connected to the metal shielding plate 70 (one in this example).

[0110] This can suppress an increase in parasitic inductance due to weakening of the ground as the distance from the metal shield plate 70 increases.

[0111] The number of layers of module substrate 90 only needs to be 2 or more. The number of columnar conductors arranged in each layer is arbitrary as long as the number of columnar conductors in the first layer is smaller than the number of columnar conductors in all other layers.

[0112] [5. Circuit Component Arrangement Structure of High-Frequency Module 1B According to Embodiment 2]

[0113] While the high-frequency module 1A according to the first embodiment has circuit components arranged on one side of a module substrate 91, the high-frequency module 1B according to the second embodiment has circuit components arranged on both sides of the module substrate 91. The high-frequency module 1B according to this embodiment differs from the high-frequency module 1A according to the first embodiment in that a metal shield plate 75 is further arranged on the main surface 91a, and the low-noise amplifier 20, switches 40 and 42, and connecting conductors 160 and 160g are arranged on the main surface 91b. The following description of the high-frequency module 1B according to this embodiment will omit the same components as the high-frequency module 1A according to the first embodiment, and will focus on the differences.

[0114] Figure 6 1B are a plan view and a cross-sectional view of a high-frequency module 1B according to the second embodiment. Figure 6 (a) shows the arrangement of the circuit components when the main surface 91a of the main surfaces 91a and 91b of the module substrate 91 facing each other is viewed from the positive z-axis direction side. Figure 6 (b) shows a perspective view of the arrangement of the circuit components when the main surface 91b is viewed from the positive z-axis direction side. Figure 6 (c) shows Figure 6 (a) and (b) are cross-sectional views taken along line VIC-VIC. The high-frequency module 1B specifically shows the arrangement structure of the circuit components constituting the high-frequency module 1 according to the embodiment.

[0115] like Figure 6 As shown, the high-frequency module 1B of this embodiment has Figure 1In addition to the circuit structure shown, the module further includes a module substrate 91 , metal shield plates 70 and 75 , a metal shield layer 95 , a via conductor 96 , resin members 92 and 93 , an external connection terminal 150 , and a connection conductor 160 .

[0116] The module substrate 91 is a substrate having opposing principal surfaces 91a (main surface) and 91b (back surface), on which the first and second transmitting circuits and the first and second receiving circuits are mounted. For example, a low-temperature co-fired ceramic (LTCC) substrate with a laminated structure of multiple dielectric layers, a high-temperature co-fired ceramic (HTCC) substrate, a component-embedded substrate, a substrate with a redistribution layer (RDL), or a printed circuit board can be used as the module substrate 91. Antenna connection terminals 100, transmission input terminals 110, reception output terminals 120, and control signal terminals 130 may also be formed on the module substrate 91.

[0117] The resin component 93 is arranged on the main surface 91b of the module substrate 91, covering at least a portion of the circuit components constituting the first transmitting circuit and the second transmitting circuit and the first receiving circuit and the second receiving circuit, and the main surface 91b of the module substrate 91, and has the function of ensuring the reliability of the mechanical strength and moisture resistance of the above-mentioned circuit components.

[0118] The external connection terminals 150 are arranged on the main surface 91b side of the main surface 91a and the main surface 91b, and are arranged on the surface of the resin member 93. The high-frequency module 1B exchanges electrical signals with the external substrate arranged on the negative side of the z-axis direction of the high-frequency module 1B via the plurality of external connection terminals 150. In addition, the ground terminal 150g among the plurality of external connection terminals 150 is set to the ground potential of the external substrate. In addition, as Figure 6 As shown, the external connection terminals 150 may be planar electrodes formed on the surface of the resin member 93 , or may be bump electrodes formed on the main surface 91 b or on the surface of the resin member 93 .

[0119] The via-hole conductor 96 connected to the metal shield plate 70 is connected to the connection conductor 160g. The connection conductor 160g is a connection conductor set to the ground potential among the connection conductors 160 arranged on the main surface 91b, and connects the via-hole conductor 96 and the ground terminal 150g.

[0120] The metal shielding plate 75 is a metal wall body that stands upright from the main surface 91a toward the top surface of the resin member 92 on the positive z-axis direction. The metal shielding plate 75 is connected to the via-hole conductor 96 on the main surface 91a. In addition, the metal shielding plate 75 is in contact with the metal shielding layer 95. In addition, the metal shielding plate 75 can be in contact with the shielding surface that is in contact with the top surface of the resin member 92 among the shielding surfaces constituting the metal shielding layer 95, and can also be in contact with the shielding surface that is in contact with the side surface of the resin member 92. In addition, the metal shielding plate 75 and the via-hole conductor 96 can be directly in contact, or they can be connected via a ground electrode formed on the main surface 91a. The via-hole conductor 96 connected to the metal shielding plate 75 is connected to the connecting conductor 160g.

[0121] Here, it is preferable that the metal shield plate 70 and the ground terminal 150g connected to the metal shield plate 70 via the connection conductor 160g overlap when viewed from above the module substrate 91. This allows the metal shield plate 70 to be connected to the ground terminal 150g at the shortest distance possible, via the via conductor 96 and the connection conductor 160g. This reduces parasitic inductance between the metal shield plate 70 and the ground terminal 150g. This strengthens the grounding of the metal shield plate 70 and enhances the shielding effect.

[0122] Furthermore, when viewing the module substrate 91 from above, the metal shield plate 75 preferably overlaps the ground terminal 150g connected to the metal shield plate 75 via the connection conductor 160g. This allows the metal shield plate 75 to be connected to the ground terminal 150g via the shortest distance between the via conductor 96 and the connection conductor 160g. This reduces parasitic inductance between the metal shield plate 75 and the ground terminal 150g. This strengthens the grounding of the metal shield plate 75 and enhances the shielding effect.

[0123] Alternatively, the via-hole conductor 96 may be a through-hole conductor having one end connected to the metal shield plate 70 or 75 and the other end connected to the connection conductor 160 g .

[0124] This can further suppress parasitic inductance, strengthen the grounding of the metal shield plate 70 or 75 , and further enhance the shielding effect.

[0125] In addition, the metal shielding plate 70 divides the main surface 91a into two areas. Figure 6 As shown in (a), power amplifier 10, matching circuits 51 and 53, and switch 41 are examples of first circuit components and are arranged in one region of principal surface 91a. Matching circuits 52 and 54 are examples of second circuit components and are arranged in another region of principal surface 91a. Switch 40 is an example of a third circuit component and is arranged on principal surface 91b.

[0126] That is, the metal shield plate 70 is disposed on the main surface 91 a and is disposed between the first circuit component and the second circuit component in a plan view of the module substrate 91 .

[0127] Furthermore, the metal shield plate 75 is disposed on the main surface 91a and, when viewed from above the module substrate 91, is disposed between the matching circuit 50 (third circuit component) and the matching circuits 52 and 54 (second circuit components). In other words, the metal shield plate 75 is disposed on the main surface 91a and, when viewed from above the module substrate 91, is disposed between the second circuit component and the third circuit component.

[0128] In this embodiment, the first circuit component is arranged in the transmission path AT or BT, the second circuit component is arranged in the reception path AR or BR, and the third circuit component is arranged in the transmission / reception path CTR.

[0129] In addition, the first circuit component configured in the above-mentioned one area may be a circuit component configured in the transmitting path AT or BT, the second circuit component configured in the above-mentioned other area may be a circuit component configured in the transmitting and receiving path CTR, and the third circuit component configured on the main surface 91b may be a circuit component configured in the receiving path AR or BR.

[0130] In addition, the first circuit component arranged in the above-mentioned one area may be a circuit component arranged in the receiving path AR or BR, the second circuit component arranged in the above-mentioned other area may be a circuit component arranged in one of the transmitting path AT or BT and the transmitting and receiving path CTR, and the third circuit component arranged on the main surface 91b may be a circuit component arranged in the other of the transmitting path AT or BT and the transmitting and receiving path CTR.

[0131] In addition, the first circuit component arranged in the above-mentioned one area may be a circuit component arranged in the transceiver path CTR, the second circuit component arranged in the above-mentioned other area may be a circuit component arranged in one of the transmission path AT or BT and the reception path AR or BR, and the third circuit component arranged on the main surface 91b may be a circuit component arranged in the other of the transmission path AT or BT and the reception path AR or BR.

[0132] The above configuration can suppress electromagnetic field coupling between circuit components arranged in the transmission path, reception path, and transmission / reception path. Furthermore, since the circuit components constituting high-frequency module 1B are arranged separately on both surfaces of module substrate 91, high-frequency module 1B can be miniaturized.

[0133] Furthermore, on the main surface 91b, a connecting conductor 160g is provided between the switch 40 and the low-noise amplifier 20 and the switch 42. This enhances the isolation between the circuit components (third circuit components) arranged in the transmission / reception path CTR and the circuit components (second circuit components) arranged in the reception path AR or BR, thereby suppressing the influx of unwanted waves into the reception path and the degradation of reception sensitivity.

[0134] [6 Effects, etc.]

[0135] As described above, the high-frequency module 1A according to this embodiment includes: a module substrate 91 having a main surface 91a; a first circuit component and a second circuit component arranged on the main surface 91a; a resin member 92 covering the main surface 91a and at least a portion of the first and second circuit components; a metal shield layer 95 covering the surface of the resin member 92 and set to ground potential; a metal shield plate 70 arranged on the main surface 91a and positioned between the first and second circuit components when viewing the module substrate 91 from above; and a via conductor 96 formed within the module substrate 91, extending in a direction intersecting the main surface 91a, and set to ground potential. The metal shield plate 70 is in contact with the metal shield layer 95 and is connected to the via conductor 96 on the main surface 91a. The thickness 70t of the metal shield plate 70 is greater than the thickness 95t of the metal shield layer 95 and is less than or equal to the outer diameter 96d of the via conductor 96.

[0136] This prevents electromagnetic field coupling between the first and second circuit components. Here, the thickness 70t of the metal shielding plate 70 is greater than the thickness 95t of the metal shielding layer 95. This improves the ability to prevent high-frequency noise generated in the circuit components of the high-frequency module 1A from flowing into other circuit components of the high-frequency module 1A, compared to the electromagnetic field shielding capability of the metal shielding layer 95, which shields external noise. Furthermore, the outer diameter 96d of the via-hole conductor 96 is greater than the thickness 70t of the metal shielding plate 70. This strengthens the grounding of the metal shielding plate 70. Consequently, strong signal interference between the first and second circuit components can be suppressed, thereby accurately suppressing degradation in the quality of transmitted or received signals.

[0137] Alternatively, in the high-frequency module 1A, the metal shield plate 70A may be erected from the main surface 91a toward the top surface of the resin member 92 , and a hole 72 may be formed between the metal shield plate 70A and the main surface 91a , penetrating in the normal direction of the metal shield plate 70A.

[0138] Thus, the hole 72 is formed between the metal shield plate 70A and the main surface 91a. Therefore, during the process of forming the resin member 92 on the main surface 91a, good fluidity of the liquid resin near the metal shield plate 70A can be ensured. Consequently, the formation of voids near the metal shield plate 70A where the resin member 92 is not formed can be suppressed.

[0139] Alternatively, in the high-frequency module 1A, the metal shield plate 70B may be erected from the main surface 91 a toward the top surface of the resin member 92 , and a hole 72 may be formed between the metal shield plate 70B and the top surface, penetrating in the normal direction of the metal shield plate 70B.

[0140] Thus, the hole 72 is formed between the metal shield plate 70B and the top surface. This ensures good fluidity of the liquid resin near the metal shield plate 70B during the process of forming the resin member 92 on the main surface 91a. This prevents the formation of voids near the metal shield plate 70B where the resin member 92 is not formed.

[0141] Alternatively, in the high-frequency module 1A, the metal shield plate 70 may include: a main body portion 71 standing upright from the main surface 91a toward the top surface of the resin member 92; and a joining portion 73 extending parallel to the main surface 91a on the main surface 91a side and connected to the via-hole conductor 96 on the main surface 91a.

[0142] Thus, the metal shield plate 70 and the main surface 91 a are bonded together via the bonding portion 73 , thereby improving the placement accuracy of the metal shield plate 70 and the bonding strength between the metal shield plate 70 and the main surface 91 a .

[0143] Alternatively, in the high-frequency module 1A, the first circuit component may be arranged in any one of a transmission path for transmitting a transmission signal, a reception path for transmitting a reception signal, and a transmission-reception path for transmitting both a transmission signal and a reception signal, and the second circuit component may be arranged in any one of the transmission path, the reception path, and the transmission-reception path except the path in which the first circuit component is arranged.

[0144] Thus, the metal shield 70 is placed between the transmission path, the reception path, and two of the transmission and reception paths, thereby suppressing signal interference between the two paths. This improves the isolation between the transmission path, the reception path, and the transmission and reception paths, and accurately suppresses degradation of the quality of the transmitted or received signals.

[0145] Alternatively, the high-frequency module 1A may further include a power amplifier 10 and a low-noise amplifier 20 , wherein the first circuit component is a first inductor connected to the output terminal of the power amplifier 10 , and the second circuit component is a second inductor connected to the input terminal of the low-noise amplifier 20 .

[0146] In this way, electromagnetic field coupling between the first inductor and the second inductor can be suppressed, thereby suppressing unnecessary waves such as the high-output transmission signal amplified by the power amplifier 10, its harmonics, or intermodulation distortion between the transmission signal and other high-frequency signals from flowing into the receiving path and degrading the receiving sensitivity.

[0147] Furthermore, in the high-frequency module 1A, the first circuit component may be the power amplifier 10 , and the second circuit component may be the low-noise amplifier 20 .

[0148] This can suppress electromagnetic field coupling between the power amplifier 10 and the low-noise amplifier 20, thereby suppressing unnecessary waves such as the high-output transmission signal amplified by the power amplifier, its harmonics, or intermodulation distortion between the transmission signal and other high-frequency signals from flowing into the receiving path and degrading the receiving sensitivity.

[0149] Furthermore, the high-frequency module 1A may further include a ground terminal 150g disposed on the main surface 91b of the module substrate 91 opposite to the main surface 91a and connected to the via conductor 96. In a plan view of the module substrate 91, the metal shield plate 70 and the ground terminal 150g overlap.

[0150] Thus, the metal shield plate 70 is connected to the ground terminal 150g at the shortest distance through the via conductor 96, thereby reducing parasitic inductance between the metal shield plate 70 and the ground terminal 150g. This strengthens the grounding of the metal shield plate 70 and improves the shielding effect.

[0151] In the high-frequency module 1A, in a plan view of the module substrate 91 , the area of ​​the portion where the metal shield plate 70 overlaps with the ground terminal 150g may be larger than the area of ​​the portion where the metal shield plate 70 does not overlap with the ground terminal 150g .

[0152] This further suppresses parasitic inductance, strengthens the grounding of the metal shield plate 70 , and further enhances the shielding effect.

[0153] Furthermore, in the high-frequency module 1A, the via-hole conductor 96 may be a through-hole conductor having one end connected to the metal shield plate 70 and the other end connected to the ground terminal 150 g .

[0154] This further suppresses parasitic inductance, strengthens the grounding of the metal shield plate 70 , and further enhances the shielding effect.

[0155] Alternatively, in the high-frequency module 1A, the module substrate 91 may have a plurality of layers, and the via conductor 96 may include: one or more first columnar conductors disposed in a first layer closest to the main surface 91a among the plurality of layers; and one or more second columnar conductors disposed in all layers other than the first layer among the plurality of layers; the one or more first columnar conductors and the one or more second columnar conductors being connected, and the number of the one or more second columnar conductors being greater than the number of the one or more first columnar conductors.

[0156] This can suppress an increase in parasitic inductance due to weakening of the ground as the distance from the metal shield plate 70 increases.

[0157] Furthermore, in the high-frequency module 1B, the module substrate 91 may further include a main surface 91b opposite to the main surface 91a, and the high-frequency module 1B may further include: a third circuit component arranged on the main surface 91b; a ground terminal 150g arranged on the main surface 91b side; and a connecting conductor 160g arranged on the main surface 91b and connecting the via-hole conductor 96 and the ground terminal 150g; the first circuit component may be arranged in any one of a transmission path for transmitting a transmission signal, a reception path for transmitting a reception signal, and a transmission and reception path for transmitting a transmission signal and a reception signal; the second circuit component may be arranged in any one of the transmission path, the reception path, and the transmission and reception path except the path in which the first circuit component is arranged; and the third circuit component may be arranged in any one of the transmission path, the reception path, and the transmission and reception path except the path in which the first circuit component and the second circuit component are arranged.

[0158] The above configuration can suppress electromagnetic field coupling between circuit components arranged in the transmission path, reception path, and transmission / reception path. Furthermore, since the circuit components constituting high-frequency module 1B are arranged separately on both surfaces of module substrate 91, high-frequency module 1B can be miniaturized.

[0159] Furthermore, the communication device 5 includes an RFIC 3 that processes high-frequency signals transmitted and received by the antenna 2 , and a high-frequency module 1 that transmits high-frequency signals between the antenna 2 and the RFIC 3 .

[0160] This makes it possible to provide a communication device 5 that suppresses degradation in the quality of a transmission signal or a reception signal.

[0161] (Other embodiments, etc.)

[0162] While the high-frequency module and communication device according to the present invention have been described above by way of embodiments, examples, and variations, the present invention is not limited to these embodiments, examples, and variations. Other embodiments achieved by combining arbitrary components of the above embodiments, examples, and variations, variations resulting from various modifications conceived by those skilled in the art to the above embodiments, examples, and variations without departing from the spirit of the present invention, and various devices incorporating the above high-frequency module and communication device are also encompassed by the present invention.

[0163] For example, in the high-frequency module 1A according to Example 1, the circuit components constituting the high-frequency module 1A are arranged on a single main surface 91a of the module substrate 91. However, the circuit components may be separately arranged on the opposing main surfaces 91a and 91b of the module substrate 91. In other words, the circuit components constituting the high-frequency module 1A may be mounted on either one side of the module substrate or on both sides.

[0164] For example, in the high-frequency modules and communication devices according to the above-described embodiments, examples, and modifications, other circuit elements and wirings may be inserted between paths connecting the circuit elements and signal paths disclosed in the drawings.

[0165] Industrial applicability

[0166] The present invention can be widely used in communication devices such as mobile phones as a high-frequency module disposed in a front-end unit that supports multiple frequency bands.

[0167] Description of Reference Numerals

[0168] 1, 1A, 1B: high frequency module;

[0169] 2: Antenna;

[0170] 3: RF signal processing circuit (RFIC);

[0171] 4: Baseband signal processing circuit (BBIC);

[0172] 5: Communication device;

[0173] 10: Power amplifier;

[0174] 15: PA control circuit;

[0175] 20: low noise amplifier;

[0176] 30, 35: duplexer;

[0177] 31, 33: transmit filter;

[0178] 32, 34: receiving filter;

[0179] 40, 41, 42: switch;

[0180] 40a, 41a, 42a: common terminals;

[0181] 40b, 40c, 41b, 41c, 42b, 42c: select terminal;

[0182] 50, 51, 52, 53, 54: matching circuit;

[0183] 60: semiconductor IC;

[0184] 70, 70A, 70B, 70C, 75: metal shielding plates;

[0185] 70t, 95t: thickness;

[0186] 71: Main body;

[0187] 72: hole;

[0188] 73: junction;

[0189] 91: module substrate;

[0190] 91a, 91b: main surface;

[0191] 92, 93: resin components;

[0192] 94: ground electrode;

[0193] 95: Metal shielding layer;

[0194] 96: via conductor;

[0195] 96a, 96b, 96b1, 96b2, 96b3, 96c, 96c1, 96c2: columnar conductors;

[0196] 96d: outer diameter;

[0197] 96P: conductor pattern;

[0198] 100: Antenna connection terminal;

[0199] 110: Send input terminal;

[0200] 120: receiving output terminal;

[0201] 130: control signal terminal;

[0202] 150: external connection terminal;

[0203] 150g: ground terminal;

[0204] 160, 160g: connecting conductor;

[0205] A1, A3: formation area;

[0206] AR, BR: receiving path;

[0207] AT, BT: sending path;

[0208] CTR: transceiver path;

[0209] P, Q: area.

Claims

1. A high-frequency module comprising: A module substrate having a main surface; A first circuit component and a second circuit component are arranged on the main surface; a resin member covering the main surface, the first circuit component, and at least a portion of the second circuit component; a metal shielding layer covering a surface of the resin member and set to a ground potential; a metal shield plate disposed on the main surface and disposed between the first circuit component and the second circuit component when the module substrate is viewed from above; as well as a via conductor formed inside the module substrate, extending in a direction intersecting the main surface, and set to a ground potential; The metal shielding plate is in contact with the metal shielding layer and is connected to the via-hole conductor on the main surface. The thickness of the metal shielding plate is greater than the thickness of the metal shielding layer and is smaller than the outer diameter of the via conductor. The module substrate has multiple layers. The via conductor has: a first columnar conductor disposed in a first layer closest to the main surface among the plurality of layers; and The second columnar conductor is arranged in all layers except the first layer among the plurality of layers. The first columnar conductor and the second columnar conductor are connected. The number of the second columnar conductors in each of the plurality of layers except the first layer is greater than the number of the first columnar conductors.

2. The high-frequency module according to claim 1, wherein The metal shield plate is erected from the main surface toward the top surface of the resin member, A hole penetrating in a normal direction of the metal shield is formed between the metal shield and the main surface.

3. The high-frequency module according to claim 1, wherein The metal shield plate is erected from the main surface toward the top surface of the resin member, A hole penetrating in a normal direction of the metal shielding plate is formed between the metal shielding plate and the top surface.

4. The high-frequency module according to any one of claims 1 to 3, wherein The metal shielding plate has: a main body portion, erected from the main surface toward the top surface of the resin member; as well as The bonding portion extends parallel to the main surface on the main surface side and is connected to the via-hole conductor on the main surface.

5. The high-frequency module according to any one of claims 1 to 3, wherein The first circuit component is arranged in any one of a transmission path for transmitting a transmission signal, a reception path for transmitting a reception signal, and a transmission and reception path for transmitting a transmission signal and a reception signal. The second circuit component is arranged in any one of the transmission path, the reception path, and the transmission / reception path except the path in which the first circuit component is arranged.

6. The high-frequency module according to any one of claims 1 to 3, wherein Also features: power amplifiers; and Low noise amplifier, The first circuit component is a first inductor connected to the output terminal of the power amplifier. The second circuit component is a second inductor connected to an input terminal of the low-noise amplifier.

7. The high-frequency module according to any one of claims 1 to 3, wherein The first circuit component is a power amplifier, The second circuit component is a low noise amplifier.

8. The high-frequency module according to any one of claims 1 to 3, wherein Also features: A ground terminal is arranged on the back surface of the module substrate opposite to the main surface and is connected to the via conductor. In a plan view of the module substrate, the metal shield plate and the ground terminal overlap.

9. The high-frequency module according to claim 8, wherein In a plan view of the module substrate, an area of ​​a portion where the metal shield plate overlaps with the ground terminal is larger than an area of ​​a portion where the metal shield plate does not overlap with the ground terminal.

10. The high-frequency module according to claim 8, wherein The via-hole conductor is a through-hole conductor having one end connected to the metal shield plate and the other end connected to the ground terminal.

11. The high-frequency module according to claim 5, wherein The module substrate further has a back surface opposite to the main surface. The high frequency module further comprises: A third circuit component is disposed on the back surface; a ground terminal, disposed on the back side; and a connecting conductor, disposed on the back surface, connecting the via-hole conductor and the ground terminal; The first circuit component is arranged in any one of a transmission path for transmitting a transmission signal, a reception path for transmitting a reception signal, and a transmission and reception path for transmitting a transmission signal and a reception signal. The second circuit component is arranged in any one of the transmission path, the reception path, and the transmission / reception path except the path in which the first circuit component is arranged. The third circuit component is arranged in a path other than the path in which the first circuit component and the second circuit component are arranged, among the transmission path, the reception path, and the transmission / reception path.

12. A communication device comprising: an RF signal processing circuit for processing high-frequency signals transmitted and received by the antenna; and The high-frequency module according to any one of claims 1 to 11 is configured to propagate the high-frequency signal between the antenna and the RF signal processing circuit.

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