Substrate processing apparatus and substrate processing method

Abstract

A substrate processing apparatus and a substrate processing method are provided. The substrate processing apparatus performs cleaning and drying of a substrate to be processed, wherein the substrate processing apparatus forms a cleaning liquid layer by supplying a cleaning liquid to the substrate to be processed, generates a first dried region on the substrate to be processed by locally removing the cleaning liquid layer by supplying a gas to the substrate to be processed, expands the first dried region while moving a boundary between the cleaning liquid layer and the first dried region at a speed equal to or lower than a predetermined speed to generate a second dried region, and further expands the second dried region to generate a third dried region.

Description

[0001] Citation of relevant applications

[0002] This application is based on and claims the priority of Japanese Patent Application No. 2021-154588, filed on September 22, 2021, the contents of which are incorporated herein by reference in their entirety. Technical Field

[0003] The embodiments relate to a substrate processing apparatus and a substrate processing method. Background Technology

[0004] There are known substrate processing apparatuses and substrate processing methods for cleaning and drying substrates. Summary of the Invention

[0005] One implementation involves reducing droplet residue during cleaning and drying of the substrate being processed.

[0006] The substrate processing apparatus of this embodiment is a substrate processing apparatus for cleaning and drying a substrate to be processed. The apparatus includes a cleaning liquid nozzle for supplying cleaning liquid to the substrate to be processed, a gas nozzle for supplying gas to the substrate to be processed, and a control unit for controlling the supply states of cleaning liquid from the cleaning liquid nozzle and gas from the gas nozzle. The control unit supplies cleaning liquid from the cleaning liquid nozzle to the substrate to be processed to form a cleaning liquid layer, and supplies gas from the gas nozzle to the substrate to be processed to partially remove the cleaning liquid layer, thereby generating a first drying region on the substrate to be processed. While keeping the moving speed of the boundary between the cleaning liquid layer and the first drying region below a predetermined speed, the first drying region is expanded to generate a second drying region, and the second drying region is further expanded to generate a third drying region.

[0007] The substrate processing method of the embodiment is a substrate processing method for cleaning and drying a substrate to be processed. In this substrate processing method, a cleaning liquid is supplied to the substrate to be processed to form a cleaning liquid layer, a gas is supplied to the substrate to be processed to partially remove the cleaning liquid layer and generate a first drying region on the substrate to be processed, while keeping the moving speed of the boundary between the cleaning liquid layer and the first drying region below a predetermined speed, the first drying region is expanded to generate a second drying region, and the second drying region is further expanded to generate a third drying region.

[0008] Based on the above structure, droplet residue can be reduced during the cleaning and drying of the substrate being processed. Attached Figure Description

[0009] Figure 1 This is a longitudinal cross-sectional view of the substrate processing apparatus according to the first embodiment.

[0010] Figure 2 This is a top view of the substrate processing apparatus according to the first embodiment.

[0011] Figure 3 It is used for the purpose of use Figure 1 The diagram illustrates the substrate processing method of the substrate processing apparatus shown.

[0012] Figure 4 It is used for the purpose of use Figure 1 The diagram illustrates the substrate processing method of the substrate processing apparatus shown.

[0013] Figure 5 It is used for the purpose of use Figure 1 The diagram illustrates the substrate processing method of the substrate processing apparatus shown.

[0014] Figure 6 It is used for Figure 1 The diagram illustrates the nozzle holding part.

[0015] Figure 7 It is used for the purpose of use Figure 1 The diagram illustrates the substrate processing method of the substrate processing apparatus shown.

[0016] Figure 8 It is used for Figure 1 The figure illustrates a first modified example of the nozzle holding part.

[0017] Figure 9 It is used for the purpose of use Figure 8 The figure illustrates the substrate processing method for the nozzle holding section.

[0018] Figure 10 It is used for Figure 1 The figure illustrates a second modified example of the nozzle holding part.

[0019] Figure 11 It is used for the purpose of use Figure 10 The figure illustrates the substrate processing method for the nozzle holding section.

[0020] Figure 12 It is used for Figure 1 The figure illustrates a third modified example of the nozzle holding part.

[0021] Figure 13 It is used for the purpose of use Figure 12 The figure illustrates the substrate processing method for the nozzle holding section.

[0022] Figure 14 This is a diagram used to illustrate the substrate processing method of the second embodiment. Detailed Implementation

[0023] Hereinafter, this embodiment will be described with reference to the accompanying drawings. To facilitate understanding, the same reference numerals will be used as much as possible for the same constituent elements in each drawing, and repeated descriptions will be omitted.

[0024] (First Implementation)

[0025] Reference Figure 1 , Figure 2 The substrate processing apparatus 1 according to the first embodiment will be described. The substrate processing apparatus 1 includes a rotary chuck 2 and a cup body 3. The rotary chuck 2 is a substrate holding part used to attract and hold the central part of the back side of the substrate S in a horizontal position. The substrate S can be, for example, a quartz substrate such as a photomask or template. Alternatively, it can be a semiconductor wafer such as a silicon substrate. Figure 1 The substrate S is illustrated using a photomask as an example. The rotary chuck 2 is connected to a drive mechanism 22, which includes a rotation mechanism, via a rotation shaft 21. The rotary chuck 2 is configured to rotate and move up and down while holding the substrate S. Figure 1 In this case, the substrate S is held such that its center is located on the rotation axis 21 of the rotating chuck 2.

[0026] A cup body 3 with an opening at the top is provided around a base plate S disposed on a rotating chuck 2. The cup body 3 includes an outer cup 31, an inner cup 32, a lifting part 33, a circular plate 34, and a liquid receiving part 35. The outer cup 31 is, for example, quadrilateral on its upper side and cylindrical on its lower side. The inner cup 32 is, for example, cylindrical with its upper side inclined inwards. The outer cup 31 is raised and lowered by the lifting part 33 connected to its lower end. The inner cup 32 is configured to be raised and lowered by a stepped portion (not shown) formed on the inner circumferential surface of the lower end of the outer cup 31.

[0027] A circular plate 34 is located below the rotating chuck 2. A liquid receiving portion 35 is provided all around the outer circumference of the circular plate 34. The liquid receiving portion 35 has a concave cross-section. The liquid receiving portion 35 stores the developer and cleaning solution that spills or is removed from the substrate S. A drain outlet 36 is formed on the bottom surface of the liquid receiving portion 35. The developer and cleaning solution stored in the liquid receiving portion 35 are discharged to the outside of the device through the drain outlet 36.

[0028] A ring member 37 is provided on the outer side of the circular plate 34. The ring member 37 is a member with a mountain-shaped cross-section. The ring member 37 is configured to hold the inner cup 32 on its outer inclined surface. Note that, although not shown in the figure, there are, for example, three lifting pins that serve as substrate support pins, penetrating through the circular plate 34. The substrate S is configured to be transferred to the rotary chuck 2 through the cooperation of these lifting pins with a substrate conveying mechanism (not shown).

[0029] The substrate processing apparatus 1 includes a developer nozzle 23, a gas nozzle 4, a cleaning fluid nozzle 5, and a monitoring mechanism 6. The developer nozzle 23 has a strip-shaped discharge port 23a extending along the diameter direction of the substrate S held in the rotating chuck 2 (see reference). Figure 2 The developer nozzle 23 is connected to the developer supply system 25 via the developer supply path 24, for example, piping. The developer supply system 25 includes a developer supply source, supply control equipment, etc.

[0030] The developer nozzle 23 is supported at one end of a nozzle arm 26, which serves as a support member. The other end of the nozzle arm 26 is connected to a movable base 27, which has a lifting mechanism (not shown). The movable base 27 is configured to move laterally along a guide member 28 using a drive source (not shown) that constitutes the moving mechanism. The nozzle standby section 29 is the standby section for the developer nozzle 23. In the nozzle standby section 29, cleaning of the front end of the developer nozzle 23 is performed.

[0031] The gas nozzle 4 is connected to the gas supply system 43 via a pipe 42. The gas supply system 43 includes a gas supply source for N2 (nitrogen) as an inert gas and supply control equipment. The gas nozzle 4 is provided, for example, in the nozzle holding part 41.

[0032] The cleaning fluid nozzle 5, which serves as a liquid nozzle, is connected to the cleaning fluid supply system 53 via a piping 51. The cleaning fluid supply system 53 includes a cleaning fluid supply source, supply control equipment, etc. The supply control equipment includes a pump with adjustable discharge flow rate and valves, etc. The cleaning fluid nozzle 5 is, for example, located in the nozzle holding section 41.

[0033] A nozzle holding part 41 is provided at the front end of the nozzle arm 44. The nozzle arm 44 is connected to a movable base 45 equipped with a lifting mechanism. The movable base 45 is configured to be able to move laterally along the guide member 28 without interfering with the developer nozzle 23 by means of a drive source (not shown) that forms the moving mechanism together with the lifting mechanism. The nozzle standby part 46 is the standby part of the cleaning fluid nozzle 5.

[0034] The monitoring unit 6 includes a high-precision camera. The monitoring unit 6 monitors the boundary between the liquid layer and the drying area, i.e., the interface of the drying area. The monitoring unit 6 outputs the monitoring results to the control unit 7.

[0035] The control unit 7 is a computer capable of executing programs. The control unit 7 has programs for executing each step of the operations performed by the substrate processing apparatus 1. The control unit 7 is configured to output control signals, based on the program, to control the developer supply system 25, the moving mechanism for moving the developer nozzle 23, the gas supply system 43, the moving mechanism for moving the gas nozzle 4 and the cleaning fluid nozzle 5, the drive mechanism 22 for driving the rotary chuck 2, and the lifting part 33 of the inner cup 32. This program is stored on storage media such as hard disks, optical disks, flash memory, floppy disks, and memory cards, and is installed from these storage media into a computer for use.

[0036] Next, a series of methods for developing and cleaning the substrate S using the substrate processing apparatus 1 will be described. First, the outer cup 31 and inner cup 32 are in the lowered position, and the developer nozzle 23, gas nozzle 4, and cleaning fluid nozzle 5 are in standby positions. In this standby state, the substrate S is transported in using a substrate transport mechanism (not shown). The transported substrate S is a substrate whose surface has been coated with resist and further painted. The substrate S is transferred to the rotary chuck 2 by the cooperation of the substrate transport mechanism and a lifting pin (not shown). In this example, a highly water-repellent material is used as the resist, therefore the static contact angle of water on the surface of the substrate S is, for example, 90 degrees.

[0037] The outer cup 31 and the inner cup 32 are set in the raised position. Developer is supplied to the substrate S from the developer nozzle 23 using a known method. In this example, the outlet 23a of the developer nozzle 23 is set at a position several mm above the surface of the substrate S. The substrate S is then rotated at, for example, a rotational speed of 1000–1200 rpm. While the substrate S is rotating, the developer is discharged in a ribbon-like manner from the outlet 23a, while the developer nozzle 23 moves along the rotational radius of the substrate S, that is, from the outer side to the center side of the substrate S. The developer nozzle 23 can move from the center side of the substrate S to the outer side, or it can swing from the center side of the substrate S to the outer side.

[0038] The developer solution, discharged in a ribbon-like manner from outlet 23a, is supplied from the outside to the inside of the substrate S in a seamless manner, thereby supplying the developer solution to the entire surface of the substrate S in a spiral manner. Furthermore, due to the centrifugal force of the rotating substrate S, the developer solution spreads outward along the surface of the substrate S, resulting in the formation of a thin film on the surface of the substrate S. Moreover, the soluble portions of the resist dissolve in the developer solution, leaving behind non-soluble portions that form the pattern.

[0039] Next, the cleaning fluid nozzle 5 is positioned above the center of the substrate S, interchanged with the developer nozzle 23. Immediately after the developer nozzle 23 stops supplying developer, cleaning fluid is rapidly discharged from the cleaning fluid nozzle 5 to clean the surface of the substrate S. After rinsing the developer with the cleaning fluid, the surface of the substrate S needs to be dried.

[0040] As a method for drying the surface of substrate S, a rotary drying method is known, in which the substrate S is rotated to remove the cleaning solution by centrifugal force. However, due to the developing process, portions with resist patterns and portions without resist patterns exist mixed on the surface of substrate S. The degree of hydrophilicity of the cleaning solution to the substrate differs between the portions with and without resist patterns.

[0041] Therefore, in the rotary drying method, the drying time varies in areas with different degrees of hydrophilicity. The boundary between the cleaning solution film and the dried area where the film has been removed becomes disordered, leading to the possibility of the liquid film breaking down into droplets that remain on the substrate S. If these droplets are tiny, they are difficult to remove by centrifugal force and will remain. These residual droplets can form watermarks, a reaction product, which becomes a defect.

[0042] To suppress defects caused by the residue of these tiny droplets, a combined drying method is employed, which simultaneously supplies cleaning fluid and sprays drying gas. This combined drying method involves: (1) supplying cleaning fluid to the center of the substrate during rotation and spreading the cleaning fluid across the entire surface of the substrate; (2) during the rotation of the substrate, moving the position of the cleaning fluid on the substrate surface from the center to the periphery by a predetermined distance, and discharging drying gas towards the center of the substrate to form a drying region in the center of the substrate; (3) during the rotation of the substrate, maintaining a state where the position of the cleaning fluid on the substrate surface is separated from the position of the drying gas by a certain distance to form a drying region interface, and further moving the drying region interface towards the periphery of the substrate to expand the drying region. Note that the "drying region interface" refers to the boundary between the liquid film and the drying region described above.

[0043] In the combined drying method, as the arrival positions of the cleaning liquid and the drying gas move towards the periphery of the substrate, the drying area interface also moves towards the periphery, thus extending the drying area formed in the center of the substrate outwards. By actively forming and moving the drying area interface, interface disorder can be suppressed, preventing the residue of tiny droplets caused by liquid film rupture. As a result, defects caused by the residue of tiny droplets can be expected to be suppressed.

[0044] For substrates with resist patterns formed through resist coating, drawing, and development, cleaning and drying were performed using a drying method, followed by inspection and defect observation. Figure 3 The image shows the location of the defect, confirmed through inspection and defect observation. The defect originated in the area inside a circle with a radius of approximately 13 mm from the center of the substrate.

[0045] The initial size and shape of the drying area formed at the center of the substrate using the drying method is a circle with a radius of approximately 13 mm. That is, the area forming the drying area is a circle with a radius of approximately 13 mm. The time from the initial formation of the drying area by blowing drying gas to the drying area becoming a circle with a radius of approximately 13 mm is approximately 0.2 seconds. After the drying area becomes a circle with a radius of approximately 13 mm, it is moved towards the periphery of the substrate while maintaining a certain distance between the arrival position of the cleaning liquid and the arrival position of the drying gas, thus expanding the drying area. That is, the expanded drying area is a circle with a radius of more than 13 mm.

[0046] exist Figure 4 The image shows the results of animation recording of the expansion of the drying area and the calculation of the interface movement speed of the drying area through animation analysis. The interface movement speed is over 50 mm / sec inside the circle with a radius of 13 mm from the center of the substrate, in the region forming the drying area. Outside the circle with a radius of 13 mm from the center of the substrate, in the region expanding the drying area, the speed is 7 mm / sec.

[0047] In regions where the drying zone forms earlier than in regions that expand the drying zone, the drying zone interface moves very rapidly. For example... Figure 5 As shown, it can be considered that the risk of droplet residue is high at locations where the degree of hydrophilicity changes significantly, and the risk of droplet residue is further increased by causing the interface of the dry region to pass through this location at a certain speed or higher.

[0048] Therefore, in this embodiment, a method is provided to suppress defects caused by the residue of tiny droplets by inhibiting the movement speed of the interface in the dry region. (Refer to...) Figure 6 The nozzle holding part 41 of this embodiment will be described. The nozzle holding part 41 holds the gas nozzle 4 and the cleaning fluid nozzle 5.

[0049] The cleaning fluid nozzle 5 is configured to oscillate using an actuator 52. The actuator 52 controls the cleaning fluid nozzle 5 to change the direction of the cleaning fluid spray based on a control signal output from the control unit 7. Next, referring to... Figure 7 The substrate processing method of this embodiment will be described. The substrate processing method of this embodiment includes a liquid layer formation process, a dry area formation process, and a dry area expansion process.

[0050] The following describes the details of the substrate processing method according to this embodiment. Step 1 (Liquid Layer Formation Process): Prepare a substrate S with a resist pattern formed by resist coating, drawing, and developing. Rotate the substrate S and supply cleaning liquid from the cleaning liquid nozzle 5 to form a liquid layer W (see reference). Figure 7 (A) More specifically, by moving the nozzle holding part 41, the cleaning fluid nozzle 5 is positioned opposite the center of the substrate S. The tip of the cleaning fluid nozzle 5 is set at a height of, for example, 15 mm above the surface of the substrate S. The rotary chuck 2 is rotated at a speed of, for example, 1000 rpm. Distilled water, for example, as the cleaning fluid, is discharged from the cleaning fluid nozzle 5 towards the center of the substrate S at a flow rate of 250 ml / min for 5 seconds. As a result, the cleaning fluid is spread from the center of the substrate S to the periphery by centrifugal force, and the developing fluid is rinsed by the cleaning fluid. Note that the so-called center of the substrate S means the center point of the substrate S and its vicinity.

[0051] Step 2 (Drying Zone Formation Process): For example... Figure 7 As shown in (B), by moving the nozzle holding part 41, the gas nozzle 4 is positioned opposite to the center of the substrate S. The cleaning fluid nozzle 5 oscillates so that the sprayed cleaning fluid is directed towards the outside of the gas sprayed from the gas nozzle 4 at the center of the substrate S. That is, the tip of the cleaning fluid nozzle 5 is tilted relative to the substrate from the vertical direction at an angle, for example, greater than 0 degrees and less than 90 degrees. Figure 7 In state (B), gas is injected from gas nozzle 4, and cleaning fluid is injected from cleaning fluid nozzle 5. Then, as... Figure 7 As shown in (C), the cleaning fluid nozzle 5 oscillates in a manner that the cleaning fluid injection direction is away from the gas injection direction of the gas nozzle 4. The oscillation speed is adjusted so that the movement speed of the drying zone interface L is 7 mm / sec. For example, the movement speed of the drying zone interface L can also be adjusted based on the monitoring results from the monitoring mechanism 6. The desired movement speed of the drying zone interface L is less than 50 mm / sec, and more preferably less than 20 mm / sec. Figure 7 As shown in (D), the cleaning fluid spray direction of the cleaning fluid nozzle 5 is directed outward, and the drying area is adjusted to a circle with a radius of about 13mm.

[0052] Step 3 (Drying Area Expansion Process): For example... Figure 7 As shown in (E), the gas arrival position of the gas ejected from the gas nozzle 4 and the cleaning liquid arrival position of the cleaning liquid ejected from the cleaning liquid nozzle 5 are kept approximately 15 mm apart. The nozzle holding part 41 is moved towards the periphery of the substrate to expand the drying area. After the entire surface of the substrate S is dried, it is confirmed through inspection and defect observation that defects caused by droplet residue have been reduced.

[0053] (First variation) Refer to Figure 8 The nozzle holding part 41A of the first modified example of this embodiment will be described. The nozzle holding part 41A holds the gas nozzle 4 and the cleaning fluid nozzle 5.

[0054] The cleaning fluid nozzle 5 is configured to move along the surface of the substrate S using an actuator 52A. The actuator 52A controls the cleaning fluid nozzle 5 to change its position based on a control signal output from the control unit 7. Next, referring to… Figure 9 The substrate processing method using the nozzle holding part 41A of the first modified example will be described. The substrate processing method using the nozzle holding part 41A of the first modified example also includes a liquid layer formation process, a drying area formation process, and a drying area expansion process.

[0055] The following describes the details of the substrate processing method in the first variation of this embodiment. Step 1 (Liquid Layer Formation Process): Prepare a substrate S with a resist pattern formed by resist coating, drawing, and developing. Rotate the substrate S and supply cleaning liquid from the cleaning liquid nozzle 5 to form a liquid layer (see reference). Figure 9 (A) More specifically, by moving the nozzle holding part 41A, the cleaning fluid nozzle 5 is positioned opposite the center of the substrate S. The cleaning fluid nozzle 5 is set at a height of, for example, 15 mm above the surface of the substrate S. The rotary chuck 2 is rotated at a speed of, for example, 1000 rpm. For example, distilled water, which is the cleaning fluid, is discharged from the cleaning fluid nozzle 5 towards the center of the substrate S at a flow rate of 250 ml / min for 5 seconds. As a result, the cleaning fluid is spread from the center of the substrate S to the periphery by centrifugal force, and the developer is rinsed by the cleaning fluid. Note that the so-called center of the substrate S means the center point of the substrate S and its vicinity.

[0056] Step 2 (Drying Zone Formation Process): For example... Figure 9 As shown in (B), by moving the nozzle holding part 41A, the gas nozzle 4 is positioned opposite to the center of the substrate S. The cleaning liquid sprayed by the cleaning liquid nozzle 5 is positioned at the center of the substrate S, outside the gas sprayed from the gas nozzle 4. Figure 9 In state (B), gas is injected from gas nozzle 4, and cleaning fluid is injected from cleaning fluid nozzle 5. Then, as... Figure 9 As shown in (C), the cleaning fluid nozzle 5 is moved horizontally relative to the substrate S so that the cleaning fluid injection position of the cleaning fluid nozzle 5 is away from the gas injection position of the gas nozzle 4. This moving speed is adjusted so that the moving speed of the drying area interface L is 7 mm / sec. Figure 9 As shown in (D), the cleaning fluid spray position of the cleaning fluid nozzle 5 is moved outward in a horizontal position relative to the substrate S, and the drying area is adjusted to a circle with a radius of about 13mm.

[0057] Step 3 (Drying Area Expansion Process): For example... Figure 9 As shown in (E), the gas arrival position of the gas ejected from the gas nozzle 4 and the cleaning liquid arrival position of the cleaning liquid ejected from the cleaning liquid nozzle 5 are kept approximately 15 mm apart. The nozzle holding part 41A is moved towards the periphery of the substrate to expand the drying area. After the entire surface of the substrate S is dried, it is confirmed through inspection and defect observation that defects caused by droplet residue have been reduced.

[0058] (Second variation) Refer to Figure 10 The nozzle holding part 41B of the second variation of this embodiment will be described. The nozzle holding part 41B holds the gas nozzle 4 and the cleaning fluid nozzles 5Ba, 5Bb, 5Bc, 5Bd, 5Be, and 5Bf. In the second variation, one gas nozzle 4 and six cleaning fluid nozzles 5Ba, 5Bb, 5Bc, 5Bd, 5Be, and 5Bf are arranged in a row.

[0059] The cleaning fluid nozzle 5Ba is configured to adjust and stop the spraying of the cleaning fluid by opening and closing the valve 52Ba. The cleaning fluid nozzle 5Bb is configured to adjust and stop the spraying of the cleaning fluid by opening and closing the valve 52Bb. The cleaning fluid nozzle 5Bc is configured to adjust and stop the spraying of the cleaning fluid by opening and closing the valve 52Bc. The cleaning fluid nozzle 5Bd is configured to adjust and stop the spraying of the cleaning fluid by opening and closing the valve 52Bd. The cleaning fluid nozzle 5Be is configured to adjust and stop the spraying of the cleaning fluid by opening and closing the valve 52Be. The cleaning fluid nozzle 5Bf is configured to adjust and stop the spraying of the cleaning fluid by opening and closing the valve 52Bf. The valves 52Ba, 52Bb, 52Bc, 52Bd, 52Be, and 52Bf of the cleaning fluid nozzles open and close according to the control signal output from the control unit 7, adjusting the spraying of the cleaning fluid from the corresponding cleaning fluid nozzle. Next, referring to... Figure 11 The substrate processing method using the nozzle holding part 41B of the second modification will be described. The substrate processing method using the nozzle holding part 41B of the second modification also includes a liquid layer formation process, a drying area formation process, and a drying area expansion process.

[0060] The details of the substrate processing method in the second variation of this embodiment will be described below.

[0061] Step 1 (Liquid Layer Formation Process): Prepare a substrate S with a resist pattern formed by resist coating, drawing, and developing. Rotate the substrate S and supply cleaning solution from cleaning solution nozzles 5Ba, 5Bb, 5Bc, 5Bd, 5Be, and 5Bf to form a liquid layer W (refer to...). Figure 11(A) More specifically, by moving the nozzle holding part 41B, the cleaning fluid nozzles 5Ba, 5Bb, 5Bc, 5Bd, 5Be, and 5Bf are positioned opposite each other at the center of the substrate S. The tips of the cleaning fluid nozzles 5Ba, 5Bb, 5Bc, 5Bd, 5Be, and 5Bf are set at a height of, for example, 15 mm above the surface of the substrate S. The rotary chuck 2 is rotated at a speed of, for example, 1000 rpm. The cleaning fluid, such as distilled water, is discharged from the cleaning fluid nozzles 5Ba, 5Bb, 5Bc, 5Bd, 5Be, and 5Bf at a flow rate of, for example, 250 ml / min towards the center of the substrate S for, for example, 5 seconds. As a result, the cleaning fluid expands from the center of the substrate S to the periphery by centrifugal force, and the developing fluid is rinsed by the cleaning fluid. Note that the so-called center of the substrate S refers to the center point of the substrate S and its vicinity.

[0062] Step 2 (Drying Zone Formation Process): For example... Figure 11 As shown in (B), by moving the nozzle holding part 41B, the gas nozzle 4 is positioned opposite to the center of the substrate S. The cleaning liquid sprayed by the cleaning liquid nozzles 5Ba, 5Bb, 5Bc, 5Bd, 5Be, and 5Bf is positioned at the center of the substrate S, outside the gas sprayed from the gas nozzle 4. Figure 11 In state (B), gas is injected from gas nozzle 4, and cleaning fluid is injected from cleaning fluid nozzles 5Ba, 5Bb, 5Bc, 5Bd, 5Be, and 5Bf. Then, as... Figure 11 As shown in (C), the cleaning fluid injection from self-cleaning fluid nozzles 5Ba, 5Bb, 5Bc, 5Bd, 5Be, and 5Bf is stopped sequentially to keep the cleaning fluid injection positions of nozzles 5Ba, 5Bb, 5Bc, 5Bd, 5Be, and 5Bf away from the gas injection position of gas nozzle 4. More specifically, the cleaning fluid injection from self-cleaning fluid nozzle 5Ba is stopped initially, followed by self-cleaning fluid nozzle 5Bb, then self-cleaning fluid nozzle 5Bc, and finally self-cleaning fluid nozzle 5Bd. This sequential stopping speed is adjusted so that the moving speed of the drying zone interface L is 7 mm / sec. Figure 11 As shown in (D), the cleaning fluid spray positions of the cleaning fluid nozzles 5Ba, 5Bb, 5Bc, 5Bd, 5Be, and 5Bf are moved outwards to adjust the drying area into a circle with a radius of approximately 13mm.

[0063] Step 3 (Drying Area Expansion Process): For example... Figure 11As shown in (E), the gas arrival position of the gas ejected from the gas nozzle 4 to the substrate S is maintained at approximately 15 mm apart from the cleaning liquid arrival position of the cleaning liquid ejected from the cleaning liquid nozzles 5Be and 5Bf to the substrate S. The nozzle holding part 41B is then moved towards the periphery of the substrate to expand the drying area. After the entire surface of the substrate S is dried, inspection and defect observation confirm that defects caused by droplet residue have been reduced.

[0064] (Third variation) Refer to Figure 12 The nozzle holding part 41C of the third variation of this embodiment will be described. The nozzle holding part 41C holds the gas nozzle 4 and the cleaning fluid nozzle 5C.

[0065] The cleaning fluid nozzle 5C is configured such that the spray angle of the cleaning fluid ejected from its front end is adjustable. A spray angle adjustment component 52C is provided inside the cleaning fluid nozzle 5C. By moving the spray angle adjustment component 52C up and down, the angle of the cleaning fluid ejected from the cleaning fluid nozzle 5C is adjusted. The spray angle adjustment component 52C controls the cleaning fluid nozzle 5C according to a control signal output from the control unit 7, thereby changing the angle of the cleaning fluid ejected from the cleaning fluid nozzle 5C. Next, referring to... Figure 13 The substrate processing method using the nozzle holding part 41C of the third modification will be described. The substrate processing method using the nozzle holding part 41A of the third modification also includes a liquid layer formation process, a drying area formation process, and a drying area expansion process.

[0066] The details of the substrate processing method in the third variation of this embodiment will be described below.

[0067] Step 1 (Liquid Layer Formation Process): Prepare a substrate S with a resist pattern formed by resist coating, drawing, and developing. Rotate the substrate S and supply cleaning solution from the cleaning solution nozzle 5C to form a liquid layer W (refer to...). Figure 13 (A) More specifically, by moving the nozzle holding part 41C, the cleaning fluid nozzle 5C is positioned opposite the center of the substrate S. The cleaning fluid nozzle 5C is set at a height of, for example, 15 mm above the surface of the substrate S. The rotary chuck 2 is rotated at a speed of, for example, 1000 rpm. The cleaning fluid, such as distilled water, is discharged from the cleaning fluid nozzle 5C to the center of the substrate S at a flow rate of, for example, 250 ml / min for, for example, for 5 seconds. As a result, the cleaning fluid is spread from the center of the substrate S to the periphery by centrifugal force, and the developer is rinsed by the cleaning fluid. Note that the so-called center of the substrate S means the center point of the substrate S and its vicinity.

[0068] Step 2 (Drying Zone Formation Process): For example... Figure 13As shown in (B), by moving the nozzle holding part 41C, the gas nozzle 4 is positioned opposite to the center of the substrate S. The angle of the cleaning liquid ejected from the cleaning liquid nozzle 5C is adjusted by a large angle so that the ejected cleaning liquid is positioned at the center of the substrate S outside the gas ejected from the gas nozzle 4. Figure 13 In state (B), gas is injected from gas nozzle 4, and cleaning fluid is injected from cleaning fluid nozzle 5C. Then, as... Figure 13 As shown in (C), the angle of the cleaning fluid sprayed from the cleaning fluid nozzle 5C is narrowed so that the cleaning fluid spray position of the cleaning fluid nozzle 5V is far away from the gas spray position of the gas nozzle 4. The speed at which this cleaning fluid spray angle is narrowed is adjusted so that the moving speed of the drying area interface L is 7 mm / sec. Figure 13 As shown in (D), move the cleaning fluid spray position of the cleaning fluid nozzle 5C outward to adjust the drying area into a circle with a radius of about 13mm.

[0069] Step 3 (Drying Area Expansion Process): For example... Figure 13 As shown in (E), the gas arrival position of the gas ejected from the gas nozzle 4 to the substrate S is maintained at approximately 15 mm apart from the cleaning liquid arrival position of the cleaning liquid ejected from the cleaning liquid nozzle 5C to the substrate S. The nozzle holding part 41C is moved towards the periphery of the substrate to expand the drying area. After the entire surface of the substrate S is dried, it was confirmed through inspection and defect observation that defects caused by droplet residue have been reduced.

[0070] In reference Figures 6 to 13 In step 2, as described, the moving speed of the drying zone interface L is set to 7 mm / sec, but the moving speed is not limited to this. As long as no defects caused by droplet residue are ultimately produced, the moving speed of the drying zone interface L can be varied within a certain range. (Refer to...) Figures 6 to 13 In step 3, as described above, the drying area is expanded to a state where the gas arrival point is approximately 15 mm away from the cleaning liquid arrival point; however, this separation distance can be adjusted appropriately. Gas injection can also be stopped in step 3.

[0071] As described above, this embodiment is a substrate processing apparatus 1 for cleaning and drying a substrate S, which is the substrate to be processed. It includes a cleaning liquid nozzle 5 for supplying cleaning liquid to the substrate, a gas nozzle 4 for supplying gas to the substrate, and a control unit 7 for controlling the supply of cleaning liquid from the cleaning liquid nozzle 5 and the supply of gas from the gas nozzle 4. The control unit 7 supplies cleaning liquid from the cleaning liquid nozzle 5 to the substrate to form a cleaning liquid layer, and supplies gas from the gas nozzle 4 to the substrate to partially remove the cleaning liquid layer, thereby creating a first drying region (see reference 1) on the substrate. Figure 7 (B) Figure 9 (B) Figure 11 (B) Figure 13 (B) While keeping the moving speed of the cleaning liquid layer at the boundary of the first drying zone below a specified speed, the first drying zone is expanded to generate a second drying zone (refer to...). Figure 7 (C) and (D) Figure 9 (C) and (D) Figure 11 (C) and (D) Figure 13 (C) and (D)), and further expand the second drying area to generate a third drying area (refer to) Figure 7 (E) Figure 9 (E) Figure 11 (E) Figure 13 (E)). The first drying region can also be a very small region, for example, about 1 nm in diameter. Alternatively, immediately after supplying gas from the gas nozzle 4 to the substrate being processed, the first drying region can be expanded to form a second drying region while keeping the moving speed of the cleaning liquid layer and the boundary of the first drying region below a specified speed.

[0072] As explained above, this embodiment is a substrate processing method for cleaning and drying a substrate S, which is the substrate to be processed. A cleaning liquid is supplied to the substrate to be processed to form a cleaning liquid layer, and gas is supplied to the substrate to be processed to partially remove the cleaning liquid layer, thereby generating a first drying region on the substrate (see reference). Figure 7 (B) Figure 9 (B) Figure 11 (B) Figure 13 (B) While keeping the moving speed of the cleaning liquid layer at the boundary of the first drying zone below a specified speed, the first drying zone is expanded to generate a second drying zone (refer to...). Figure 7 (C) and (D) Figure 9 (C) and (D) Figure 11 (C) and (D) Figure 13 (C) and (D)), and further expand the second drying area to generate a third drying area (refer to) Figure 7 (E) Figure 9 (E) Figure 11 (E) Figure 13 (E)). The first drying region can also be a very small region, for example, about 1 nm in diameter. Alternatively, immediately after supplying gas from the gas nozzle 4 to the substrate being processed, the first drying region can be expanded to form a second drying region while keeping the moving speed of the cleaning liquid layer and the boundary of the first drying region below a specified speed.

[0073] When forming the first drying region, the second drying region, and the third drying region, at least one of the liquid arrival position of the cleaning liquid on the substrate being processed and the gas arrival position of the gas on the substrate being processed is adjusted.

[0074] (Second Implementation) Refer to Figure 14 Another substrate processing method using the nozzle holding part 41 of this embodiment will be described. The substrate processing method of this embodiment includes a liquid layer formation process, a drying area formation process, and a drying area expansion process. Note that the structure of the substrate processing apparatus 1 of this embodiment is the same as that of the first embodiment.

[0075] The following is a detailed description of the substrate processing method of this embodiment. Step 1 (Liquid Layer Formation Process): Prepare a substrate S with a resist pattern formed by resist coating, drawing, and developing. Rotate the substrate S and supply cleaning liquid from the cleaning liquid nozzle 5 to form a liquid layer W (see reference). Figure 14 (A) More specifically, by moving the nozzle holding part 41, the cleaning fluid nozzle 5 is positioned opposite the center of the substrate S. The cleaning fluid nozzle 5 is set at a height of, for example, 15 mm above the surface of the substrate S. The rotary chuck 2 is rotated at a speed of, for example, 1000 rpm. The cleaning fluid, such as distilled water, is discharged from the cleaning fluid nozzle 5 into the center of the substrate S at a flow rate of, for example, 250 ml / min for, for example, for 5 seconds. As a result, the cleaning fluid is spread from the center of the substrate S to the periphery by centrifugal force, and the developer is rinsed by the cleaning fluid. Note that the so-called center of the substrate S means the center point of the substrate S and its vicinity.

[0076] Step 2 (Drying Zone Formation Process): For example... Figure 14 As shown in (B), by moving the nozzle holding part 41, the gas nozzle 4 is positioned opposite to the center of the substrate S. Figure 14 In state (B), gas is sprayed from gas nozzle 4 and cleaning liquid is sprayed from cleaning liquid nozzle 5. By spraying gas towards the center of substrate S and spraying cleaning liquid at a position approximately 15 mm from the center of substrate S, a circular drying area with a radius of approximately 13 mm is formed in the center of substrate S. Next, as... Figure 14 As shown in (C), the cleaning liquid is moved 10mm toward the center of the substrate S to adjust the radius of the circular drying area to about 3mm.

[0077] Step 3 (Drying Area Expansion Process): For example... Figure 14As shown in (D), the gas arrival position of the gas ejected from the gas nozzle 4 and the cleaning liquid arrival position of the cleaning liquid ejected from the cleaning liquid nozzle 5 are kept approximately 15 mm apart. The nozzle holding part 41 is moved towards the periphery of the substrate to expand the drying area. After the entire surface of the substrate S is dried, it is confirmed through inspection and defect observation that defects caused by droplet residue have been reduced.

[0078] In reference Figure 14 In step 2, as described, the drying area is expanded by separating the gas arrival position from the cleaning liquid arrival position by approximately 15 mm, but this separation distance can be appropriately varied. The radius of the drying area formed in the center of the substrate S is not limited to approximately 13 mm. Gas injection can also be stopped after the drying area is formed. In step 2, the distance by which the cleaning liquid arrival position moves towards the center of the substrate S is not limited to approximately 10 mm. The radius of the adjusted drying area is not limited to approximately 3 mm. In step 3, the drying area is expanded by separating the gas arrival position from the cleaning liquid arrival position by approximately 15 mm, but this separation distance can be appropriately varied.

[0079] As described above, this embodiment is a substrate processing apparatus 1 for cleaning and drying a substrate. It includes a cleaning liquid nozzle 5 for supplying cleaning liquid to the substrate, a gas nozzle 4 for supplying gas to the substrate, and a control unit 7 for controlling the supply of cleaning liquid from the cleaning liquid nozzle 5 and the supply of gas from the gas nozzle 4. The control unit 7 supplies cleaning liquid from the cleaning liquid nozzle 5 to the substrate to form a cleaning liquid layer, and supplies gas from the gas nozzle 4 to the substrate to partially remove the cleaning liquid layer, thereby creating a first drying region (see reference 1) on the substrate. Figure 14 (B)) The first drying region is reduced to generate a fourth drying region (refer to (B)). Figure 14 (C)), and further expand the fourth drying region to generate the fifth drying region (refer to). Figure 14 (D)).

[0080] As explained above, this embodiment is a substrate processing method for cleaning and drying a substrate S, which is the substrate to be processed. A cleaning liquid is supplied to the substrate to be processed to form a cleaning liquid layer, and gas is supplied to the substrate to be processed to partially remove the cleaning liquid layer, thereby generating a first drying region on the substrate (see reference). Figure 14 (B)) The first drying region is reduced to generate a fourth drying region (refer to (B)). Figure 14 (C)), and further expand the fourth drying region to generate the fifth drying region (refer to). Figure 14 (D)).

[0081] Alternatively, the first drying area can be shrunk to form a fourth drying area while the moving speed of the cleaning liquid layer and the boundary of the first drying area is kept below a specified speed, and the fourth drying area can be further expanded to form a fifth drying area.

[0082] When forming the first drying region, the fourth drying region, and the fifth drying region, at least one of the liquid arrival position of the cleaning liquid on the substrate being processed and the gas arrival position of the gas on the substrate being processed is adjusted.

[0083] In the described embodiments and variations, the adjustment of the liquid arrival position can be achieved, for example, by adjusting the flow rate of the discharged cleaning fluid. Similarly, the adjustment of the gas arrival position can be achieved, for example, by adjusting the flow rate of the discharged gas.

[0084] The embodiments described above have been illustrated with reference to specific examples. However, this disclosure is not limited to these specific examples. Any design modifications made to these specific examples by those skilled in the art, as long as they possess the features of this disclosure, are included within the scope of this disclosure. The elements, their configurations, conditions, shapes, etc., of the aforementioned specific examples are not limited to the illustrated manner and can be appropriately modified. The elements of the aforementioned specific examples can be appropriately combined in different ways as long as they do not create technical contradictions.

Claims

1. A substrate processing apparatus for cleaning and drying a substrate to be processed, characterized in that, The substrate processing apparatus includes: a substrate holding section for holding the substrate to be processed; a cleaning liquid nozzle for forming a liquid layer by supplying liquid onto the substrate to be processed; and a gas nozzle for forming a drying area by supplying gas onto the substrate to be processed. The control unit controls the cleaning fluid nozzle and the gas nozzle; the monitoring mechanism monitors the interface of the drying area, which is the boundary between the liquid layer and the drying area. The control unit performs substrate processing, which includes: (1) a liquid layer formation process, wherein the substrate to be processed is rotated, and the cleaning fluid nozzle is positioned opposite to the center of the substrate to be processed by moving the nozzle holding unit, and cleaning fluid is supplied from the cleaning fluid nozzle to form a liquid layer, wherein the cleaning fluid is spread from the center of the substrate to the periphery by centrifugal force; (2) a drying area formation process, wherein the gas nozzle is positioned opposite to the center of the substrate to be processed by moving the nozzle holding unit, and the cleaning fluid nozzle supplies the liquid and the gas nozzle supplies the gas simultaneously. Based on the monitoring results of the monitoring mechanism, the liquid arrival position on the substrate being treated is adjusted from the center of the substrate to the periphery so that the moving speed of the interface of the drying area is below a specified speed, thereby preventing defects caused by liquid droplet residue; and (3) the drying area expansion process, maintaining a state in which the gas arrival position of the gas injected from the gas nozzle on the substrate being treated is separated from the cleaning liquid arrival position of the cleaning liquid injected from the cleaning liquid nozzle on the substrate being treated by a specified distance, moving the nozzle holding part toward the periphery of the substrate being treated to expand the drying area, wherein the shape of the drying area is circular.

2. The substrate processing apparatus according to claim 1, characterized in that, The control unit controls the oscillation state or spray angle of the cleaning fluid nozzle based on the monitoring results of the monitoring mechanism.

3. The substrate processing apparatus according to claim 1, characterized in that, The cleaning fluid nozzle is configured to oscillate using an actuator. The actuator controls the cleaning fluid nozzle to change the cleaning fluid spray direction based on a control signal output from the control unit. In the drying area formation process, by moving the nozzle holding unit, the gas nozzle is positioned opposite the center of the substrate to be processed. The cleaning fluid nozzle oscillates so that the sprayed cleaning fluid is directed towards the outside of the gas sprayed from the gas nozzle at the center of the substrate to be processed. Gas is sprayed from the gas nozzle, and cleaning fluid is sprayed from the cleaning fluid nozzle. Then, the oscillation speed is adjusted so that the cleaning fluid spray direction of the cleaning fluid nozzle is away from the gas spray direction of the gas nozzle, so that the movement speed of the drying area interface is a predetermined movement speed, thereby preventing defects caused by droplet residue. The cleaning fluid spray direction of the cleaning fluid nozzle is directed outward, and the drying area is adjusted to a circle of a predetermined size.

4. The substrate processing apparatus according to claim 1, characterized in that, The cleaning fluid nozzle is configured to move along the surface of the substrate being processed using an actuator. The actuator controls the cleaning fluid nozzle to change its position based on a control signal output from the control unit. In the drying area formation process, firstly, by moving the nozzle holding unit, the gas nozzle is positioned opposite to the center of the substrate being processed. The cleaning fluid sprayed by the cleaning fluid nozzle is positioned at the center of the substrate being processed, outside the gas sprayed from the gas nozzle. Gas is sprayed from the gas nozzle, and cleaning fluid is sprayed from the cleaning fluid nozzle. Next, the cleaning fluid nozzle is moved horizontally relative to the substrate being processed, so that the cleaning fluid spray position of the cleaning fluid nozzle is away from the gas spray position of the gas nozzle. The moving speed is adjusted so that the moving speed of the drying area interface is a predetermined moving speed, thereby preventing defects caused by droplet residue. The cleaning fluid spray position of the cleaning fluid nozzle is moved outward in a horizontal position relative to the substrate being processed, and the drying area is adjusted to a circle of a predetermined size.

5. The substrate processing apparatus according to claim 1, characterized in that, The cleaning fluid nozzles include a first to a sixth cleaning fluid nozzle arranged sequentially from near the gas nozzle to away from the gas nozzle. The first to sixth cleaning fluid nozzles are configured to adjust the spraying and stopping of the cleaning fluid by opening and closing valves. The valves of each of the first to sixth cleaning fluid nozzles open and close according to a control signal output from the control unit, adjusting the spraying of the cleaning fluid from the corresponding nozzle. During the drying zone formation process, by moving the nozzle holding unit, the gas nozzles are positioned opposite each other at the center of the substrate being processed. The cleaning fluid sprayed by the first to sixth cleaning fluid nozzles onto the substrate being processed... The center portion is positioned outside the gas ejected from the gas nozzle. Gas is ejected from the gas nozzle, and cleaning liquid is ejected from the first to sixth cleaning liquid nozzles. Then, the cleaning liquid ejection from the first to fourth cleaning liquid nozzles is stopped sequentially, so that the cleaning liquid ejection position of the first to sixth cleaning liquid nozzles is away from the gas ejection position of the gas nozzle. The speed of the sequential stopping is adjusted so that the moving speed of the interface of the drying area is a predetermined moving speed, thereby preventing defects caused by droplet residue. The cleaning liquid ejection position of the first to sixth cleaning liquid nozzles is moved outward, and the drying area is adjusted to a circle of a predetermined size.

6. The substrate processing apparatus according to claim 1, characterized in that, The cleaning fluid nozzle is configured such that the spray angle of the cleaning fluid ejected from its front end is adjustable. An angle adjustment component is provided inside the cleaning fluid nozzle. By moving the angle adjustment component up and down, the angle of the cleaning fluid ejected from the cleaning fluid nozzle is adjusted. The angle adjustment component controls the cleaning fluid nozzle according to a control signal output from the control unit, thereby changing the angle of the cleaning fluid ejected from the cleaning fluid nozzle. In the drying zone formation process, by moving the nozzle holding part, the gas nozzle is positioned opposite the center of the substrate being processed, and the angle of the cleaning fluid ejected from the cleaning fluid nozzle is adjusted by a large angle. The sprayed cleaning liquid is positioned at the center of the substrate being treated, outside the gas sprayed from the gas nozzle. Gas is sprayed from the gas nozzle, and cleaning liquid is sprayed from the cleaning liquid nozzle. Then, the angle of the cleaning liquid sprayed from the cleaning liquid nozzle is narrowed so that the cleaning liquid spray position of the cleaning liquid nozzle is away from the gas spray position of the gas nozzle. The speed at which the spray angle of the cleaning liquid is narrowed is adjusted so that the moving speed of the interface of the drying area is a predetermined moving speed, thereby preventing defects caused by droplet residue. The cleaning liquid spray position of the cleaning liquid nozzle is moved outward, and the drying area is adjusted to a circle of a predetermined size.

7. A substrate processing apparatus for cleaning and drying a substrate to be processed, characterized in that, The substrate processing apparatus includes: a substrate holding section for holding the substrate to be processed; a cleaning liquid nozzle for forming a liquid layer by supplying liquid onto the substrate to be processed; and a gas nozzle for forming a drying area by supplying gas onto the substrate to be processed. The control unit controls the cleaning fluid nozzle and the gas nozzle; the monitoring mechanism monitors the interface of the drying area, which is the boundary between the liquid layer and the drying area. The control unit performs substrate processing, which includes: (1) a liquid layer formation process, wherein the substrate to be processed is rotated, and the cleaning liquid nozzle is positioned opposite to the center of the substrate to be processed by moving the nozzle holding unit, and cleaning liquid is supplied from the cleaning liquid nozzle to form a liquid layer, wherein the cleaning liquid is spread from the center of the substrate to the periphery by centrifugal force; (2) a drying area formation process, wherein the gas nozzle is positioned opposite to the center of the substrate to be processed by moving the nozzle holding unit, and gas is sprayed from the gas nozzle and cleaning liquid is sprayed from the cleaning liquid nozzle; and the cleaning liquid is sprayed into the center of the substrate to be processed by spraying the cleaning liquid nozzle. Gas is sprayed and cleaning liquid is sprayed at a position at a predetermined distance from the center of the substrate being treated, forming a circular drying area of ​​a predetermined size in the center of the substrate being treated; then, the cleaning liquid arrival position is moved a predetermined distance toward the center of the substrate being treated, thereby reducing the radius of the circular drying area; and (3) the drying area expansion process, maintaining the state in which the gas arrival position of the gas sprayed from the gas nozzle on the substrate being treated and the cleaning liquid arrival position of the cleaning liquid sprayed from the cleaning liquid nozzle on the substrate being treated are separated by the predetermined distance, the nozzle holding part is moved toward the periphery of the substrate being treated, and the drying area is expanded, the shape of the drying area being circular.

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