A sample structure applied to FIB processing and analysis and a preparation method thereof

Abstract

The application discloses a sample structure applied to FIB processing and analysis and a preparation method thereof, and belongs to the technical field of FIB processing and analysis, and comprises a first metal layer, a second metal layer and a sample, the back surface of the sample is pasted on the surface of the first metal layer, and the second metal layer is partially covered on the front surface of the sample so that the front surface of the sample used for FIB analysis and processing is exposed outside; the back surface of the sample is fixed on the surface of the first metal layer; the front surface of the sample is ground to reach a proper thickness; and the second metal layer is partially covered on the front surface of the sample for FIB analysis and processing. The sample is fixed in the middle by the first metal layer and the second metal layer, and the sample area to be analyzed or processed is exposed outside, so that the deformed and coiled film sample is fixed flat on the base, and the needs of FIB processing or analysis are met.

Description

Technical Field

[0001] This invention relates to the field of FIB processing and analysis technology, and more specifically, to a sample structure and its preparation method for FIB processing and analysis. Background Technology

[0002] FIB (Focused Ion Beam) is an ion beam generated by an ion source, accelerated by an ion gun, and focused onto the sample surface. Its functions include: (1) generating secondary electron signals to obtain electron images, similar to SEM; (2) using a high-current ion beam to strip surface atoms to complete micro and nanoscale surface morphology processing; and (3) selectively removing metals, oxide layers, or depositing metal layers by combining physical sputtering with chemical gas reactions.

[0003] FIB can provide chip circuitry or related photomask modifications for some samples and engineering wafers before the final product is mass-produced. The verification results of these samples can be used to shorten the R&D time and cycle and accelerate the time to market for end products.

[0004] However, since FIB uses electron beams and ion beams to process and analyze samples, if the sample's insulation or thermal conductivity is too poor, it is prone to failure during the analysis and processing due to electron accumulation or excessively high temperatures. Therefore, FIB sample preparation must ensure good electrical and thermal conductivity. In addition, for analyzing highly flexible organic or special material thin films, such as TFT-OLED structural thin layers, how to flatten and fix the deformed and rolled-up thin film sample on the substrate is also a major challenge in FIB processing or analysis.

[0005] Currently, most smartphones use two main types of panels: TFT LCD and AMOLED. AMOLED stands for Active-matrix Organic Light-emitting Diode, and AM refers to the pixel addressing technology behind OLED. Because each pixel in an AMOLED screen emits its own light and can be independently controlled, it can achieve purer blacks and higher contrast. Furthermore, turning off unnecessary pixels during display reduces power consumption. Due to the fewer layers within the screen module, it has better light transmittance, which is beneficial for achieving higher brightness and wider viewing angles. Also, because AMOLED does not require a TFT backlight, it is relatively thinner.

[0006] OLED manufacturing and research require extensive analytical testing. Structural imaging using electron microscopy is an indispensable analytical tool. However, during sample preparation, when the OLED thin film is removed from the product, the film sample itself experiences severe entanglement, which is detrimental to FIB (Film Embedding Analysis).

[0007] In view of this, the inventor has been conducting in-depth research to address this need, which led to the creation of this invention. Summary of the Invention

[0008] To overcome the problem in existing technologies where deformed, coiled thin film samples are flattened and fixed to a substrate to meet the needs of FIB processing or analysis, this invention provides a sample structure for FIB processing and analysis, comprising a first metal layer, a second metal layer, and a sample. The back side of the sample is adhered to the surface of the first metal layer, and the second metal layer partially covers the front side of the sample, exposing the area on the front side intended for FIB analysis and processing. Here, the front side of the sample is the surface to be analyzed or processed, while the first metal layer is either fixedly mounted on the substrate or is part of the substrate surface.

[0009] Preferably, the first metal layer is selected from one of conductive tape, metal film layer and metal plating layer;

[0010] The second metal layer is selected from one of conductive tape, metal film, and metal plating.

[0011] Preferably, the first metal layer and / or the second metal layer are single-element, alloy, or composite layers.

[0012] Preferably, when the first metal layer is a metal plating layer, it is plated on the substrate.

[0013] Preferably, when the first metal layer is a metal plating layer, it is an In or Sn-Bi alloy with a melting point below 200°C.

[0014] Preferably, when the second metal layer is a metal film layer, it is bonded to the sample by hot pressing;

[0015] Alternatively, it can be sputtered onto the first metal layer and the surface of the sample.

[0016] Preferably, the sample is a low thermal conductivity material, a high resistance material, an organic material, or a flexible material.

[0017] Preferably, the low thermal conductivity material is glass, the high resistance material is ceramic or semiconductor, the organic material is OLED, and the flexible material is fiber or plastic.

[0018] The present invention also provides a method for preparing the above-mentioned sample structure, comprising the following steps:

[0019] Step 1: Fix the back of the sample to the surface of the first metal layer;

[0020] Step 2: Grind the front side of the sample to achieve an appropriate thickness;

[0021] Step 3: A second metal layer is locally applied to the front of the sample for FIB analysis processing.

[0022] The present invention also provides a method for preparing the above-mentioned sample structure, comprising the following steps:

[0023] Step 1: Adhere the front side of the sample to the tape and attach the tape to the surface of the first metal layer. At this time, when the first metal layer is a metal plating layer, it is plated on the substrate.

[0024] Step 2: Heat the first metal layer to melt its surface and bond it with the sample;

[0025] Step 3: Remove the tape and grind the front of the sample to achieve the appropriate thickness;

[0026] Step 4: A second metal layer is partially applied to the front of the sample for FIB analysis processing.

[0027] Beneficial effects:

[0028] The beneficial effects of adopting the technical solution of the present invention are as follows: the sample is fixed in the middle by using a first metal layer and a second metal layer, and the area of ​​the sample to be analyzed or processed is exposed to the outside, so that the deformed rolled film sample is flat and fixed on the base, which meets the needs of FIB processing or analysis. Attached Figure Description

[0029] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained from these drawings without creative effort.

[0030] Figure 1 This is a schematic diagram of a preferred sample structure of the present invention;

[0031] Figure 2 This is a schematic diagram of the preferred adhesive method for preparing sample structures according to the present invention. Figure 1 ;

[0032] Figure 3 This is a schematic diagram of the preferred adhesive method for preparing sample structures according to the present invention. Figure 2 ;

[0033] Figure 4This is a schematic diagram of the preferred adhesive method for preparing sample structures according to the present invention. Figure 3 ;

[0034] Figure 5 This is a schematic diagram of the preferred fusion welding method for preparing sample structures according to the present invention. Figure 1 ;

[0035] Figure 6 This is a schematic diagram of the preferred fusion welding method for preparing sample structures according to the present invention. Figure 2 ;

[0036] Figure 7 This is a schematic diagram of the preferred fusion welding method for preparing sample structures according to the present invention. Figure 3 ;

[0037] Figure 8 This is a schematic diagram of the preferred fusion welding method for preparing sample structures according to the present invention. Figure 4 ;

[0038] Figure 9 This is a schematic diagram of the preferred fusion welding method for preparing sample structures according to the present invention. Figure 5 ;

[0039] Figure 10 This is a schematic diagram of the preferred fusion welding method for preparing sample structures according to the present invention. Figure 6 . Detailed Implementation

[0040] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present invention, not all of them. Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to represent selected embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without inventive effort are within the scope of protection of the present invention.

[0041] like Figure 1 As shown, the sample structure used for FIB processing and analysis includes a first metal layer 1, a second metal layer 2, and a sample 3. The back of the sample 3 is adhered to the surface of the first metal layer 1, and the second metal layer 2 partially covers the front of the sample 3, exposing the area of ​​the sample 3 used for FIB analysis and processing. Here, the front of the sample 3 is the surface to be analyzed or processed, while the first metal layer 1 is fixedly mounted on a base or is part of the base surface.

[0042] In a preferred embodiment, the first metal layer 1 is selected from one of conductive tape, metal film layer and 5 metal plating layer;

[0043] The second metal layer 2 is selected from one of conductive tape, metal film layer and metal plating layer.

[0044] In a preferred embodiment, the first metal layer 1 and / or the second metal layer 2 are single-element, alloy, or composite layers.

[0045] In a preferred embodiment, when the first metal layer 1 is a metal plating layer, it is plated on the substrate.

[0046] In a preferred embodiment, when the first metal layer 1 is a metal plating layer, it is an In or Sn-Bi alloy with a melting point below 200°C.

[0047] In a preferred embodiment, when the second metal layer 2 is a metal film layer, it is bonded to the sample by hot pressing;

[0048] 5. Alternatively, it can be sputtered onto the surface of the first metal layer 1 and the sample 3.

[0049] In a preferred embodiment, sample 3 is a low thermal conductivity material, a high resistance material, an organic material, or a flexible material.

[0050] In a preferred embodiment, the low thermal conductivity material is glass, the high resistance material is ceramic or semiconductor, the organic material is OLED, and the flexible material is fiber or plastic.

[0051] 0 as Figure 2-4 As shown, this embodiment also provides a method for preparing the above-mentioned sample structure, including the following steps:

[0052] Step 1: Fix the back of the sample to the surface of the first metal layer;

[0053] Step 2: Grind the front side of the sample to achieve an appropriate thickness;

[0054] Step 3: A second metal layer is locally applied to the front of the sample for FIB analysis processing.

[0055] 5 such as Figure 5-10 As shown, this embodiment also provides a method for preparing the above-mentioned sample structure, including the following steps:

[0056] Step 1: Adhere the front side of sample 3 to tape 4 and attach tape 4 to the surface of the first metal layer 1. At this time, when the first metal layer 1 is a metal plating layer, it is plated on the substrate 100; here, the metal plating layer is preferably an In plating layer with a melting point of 156.6℃.

[0057] Step 2: Heat the first metal layer 1 until its surface melts and combines with the sample 3 to form a fused bonding layer 5; preferably, the substrate 100 is heated to 160°C for 1 minute to melt the surface of the first metal layer 1 and combine with the sample 3.

[0058] Step 3: Remove tape 4 and grind the front side of sample 3 to achieve the appropriate thickness;

[0059] Step 4: A second metal layer 2 is partially applied to the front side of sample 3 for FIB analysis processing.

[0060] The above description is merely a preferred embodiment of the present invention and is not intended to limit the invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A sample structure for FIB processing and analysis, characterized in that, The sample includes a first metal layer, a second metal layer, and a sample. The sample is a deformed and curled thin film sample. The front side of the sample is adhered to an adhesive tape, and the adhesive tape is attached to the surface of the first metal layer. The first metal layer is heated so that its surface melts and combines with the sample, so that the back side of the sample is adhered to the surface of the first metal layer. The second metal layer partially covers the front side of the sample so that the front side of the sample is exposed in the processing area for FIB analysis. The first metal layer is a metal plating layer made of In or Sn-Bi alloy, and its melting point is below 200°C.

2. The sample structure for FIB processing and analysis according to claim 1, characterized in that, The first metal layer is selected from one of conductive tape, metal film layer and metal plating layer; The second metal layer is selected from one of conductive tape, metal film, and metal plating.

3. The sample structure for FIB processing and analysis according to claim 1, characterized in that, The first metal layer and / or the second metal layer are single-element, alloy, or composite layers.

4. The sample structure for FIB processing and analysis according to claim 2, characterized in that, When the first metal layer is a metal plating layer, it is deposited on the substrate.

5. A sample structure for FIB processing and analysis according to claim 2, characterized in that, When the second metal layer is a metal film layer, it is bonded to the sample by hot pressing; Alternatively, it can be sputtered onto the first metal layer and the surface of the sample.

6. The sample structure for FIB processing and analysis according to claim 1, characterized in that, The sample is a low thermal conductivity material, a high resistance material, an organic material, or a flexible material.

7. A sample structure for FIB processing and analysis according to claim 6, characterized in that, The low thermal conductivity material is glass, the high resistance material is ceramic or semiconductor, the organic material is OLED, and the flexible material is fiber or plastic.

8. A method for preparing a sample structure as described in any one of claims 1-7, characterized in that, Includes the following steps: Step 1: Fix the back of the sample to the surface of the first metal layer; Step 2: Grind the front side of the sample to achieve an appropriate thickness; Step 3: A second metal layer is locally applied to the front of the sample for FIB analysis processing.

9. A method for preparing a sample structure as described in any one of claims 1-7, characterized in that, Includes the following steps: Step 1: Adhere the front side of the sample to the tape and attach the tape to the surface of the first metal layer; Step 2: Heat the first metal layer to melt its surface and bond it with the sample; Step 3: Remove the tape and grind the front of the sample to achieve the appropriate thickness; Step 4: A second metal layer is partially applied to the front of the sample for FIB analysis processing.

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