A Single-Particle Transient Simulation Method

Abstract

This invention proposes a single-event transient simulation method, comprising: acquiring preset radial parameters of particle incidence, particle incidence depth, orbital path coefficient, time parameters, and electron-hole pair density; determining the charge generation time of the particle based on the time parameters; determining the particle's variation along its orbital path based on the particle incidence depth and the orbital path coefficient; and simulating the electron-hole pair generation rate based on the radial parameters, the charge generation time, the variation, the electron-hole pair density, and a preset electron-hole pair generation rate model. The beneficial effect of this invention is that it can simulate and determine the changes in the electrical performance of a device under single-event effects.

Description

Technical Field

[0001] This invention relates to the field of single-event simulation of semiconductor devices, and more specifically, to a single-event transient simulation method. Background Technology

[0002] With the continuous advancement of space technology, more and more semiconductor devices and equipment are operating in various radiation environments. Common radiation environments include space radiation, air radiation, and man-made radiation. Based on the mechanism of radiation damage and performance degradation of electronic components, the common irradiation effect is that when a single high-energy particle is incident on a semiconductor device, due to the deposition of ionization energy, a large number of electron-hole pairs are induced in the sensitive area of ​​the device. After the electron-hole pairs are collected by the electric field, a pulse current is formed, which leads to a change in the operating state of the device.

[0003] However, with current technology, it is difficult to determine the changes in electrical performance of a device when subjected to a single-event effect. As a result, semiconductor devices are often fatally damaged and degraded due to radiation environments. Summary of the Invention

[0004] The problem this invention aims to solve is how to determine the changes in the electrical performance of a device under single-event effects.

[0005] To address the above problems, this invention provides a single-particle transient simulation method, comprising the following steps:

[0006] Obtain the preset radial parameters of particle incidence, particle incidence depth, orbital path coefficient, time parameters, and electron-hole pair density;

[0007] The time of charge generation of the particle is determined based on the time parameter, and the change of the particle on the orbital path is determined based on the particle incident depth and the orbital path coefficient.

[0008] The electron-hole pair generation rate is simulated based on the radial parameter, the charge generation time, the change, the electron-hole pair density, and a preset electron-hole pair generation rate model.

[0009] In this technical solution, by using preset parameters related to single-particle incident, such as radial parameters, incident depth, orbital path coefficient, time parameters, and electron-hole pair density, combined with a preset electron-hole pair generation rate model to simulate the electron-hole pair generation rate, the electrical performance changes of the device under single-particle effects are simulated. This facilitates researchers to study the degradation law and effect mechanism of the device more deeply, and further facilitates the targeted development of radiation-resistant technologies for semiconductor devices.

[0010] Further, the time parameters include the continuous generation time of electron-hole pairs, the delay time of electron-hole pair generation during particle incident, and the current time; determining the charge generation time of the particle based on the time parameters includes:

[0011] When the continuous generation of electron-hole pairs is equal to 0, the charge generation time is determined by the particle incident electron-hole pair generation delay time, the current time, and the first charge generation time determination formula.

[0012] When the continuous generation time of electron-hole pairs is greater than 0, the charge generation time is obtained by the particle incident generation delay time of electron-hole pairs, the continuous generation time of electron-hole pairs, the current time, and the second charge generation time determination formula.

[0013] Furthermore, the formula for determining the time of the first charge generation includes:

[0014] T(t) = deltafunction(t-t0);

[0015] The formula for determining the second charge generation time includes:

[0016]

[0017] Where T(t) is the charge generation time, t is the current time, t0 is the delay time for the generation of electron-hole pairs by the particle incident, and t c The continuous generation of electron-hole pairs is the time, and π is the mathematical constant pi.

[0018] Further, the electron-hole pair density includes a first electron-hole pair density and a second electron-hole pair density, the variation includes a first orbital path variation parameter and a second orbital path variation parameter, and the preset electron-hole pair generation rate model includes:

[0019] G(r,l,t)=(DENSITY·L1(l)+S·B.DENSITY·L2(l))·R(r)·T(t);

[0020] Wherein, G(r, l, t) is the electron-hole pair generation rate, DENSITY is the first electron-hole pair density, B.DENSITY is the second electron-hole pair density, S is the scaling parameter, L1(l) is the first orbital path variation parameter, L2(l) is the second orbital path variation parameter, R(r) is the radial parameter, and T(t) is the charge generation time.

[0021] Furthermore, the formula for determining the first trajectory path change parameter includes:

[0022] L1(l)=A1+A2·l+A3exp(A4·l);

[0023] The formula for determining the second orbital path variation parameters includes:

[0024] L2(l)=B1(B2+l·B3) B4 ;

[0025] Wherein, A1, A2, A3, A4, B1, B2, B3 and B4 represent the orbital path coefficients, and l represents the particle incident depth.

[0026] Furthermore, the formula for determining the scaling parameter includes:

[0027]

[0028] Where q is the amount of charge, π is the mathematical constant pi, and RADIUS is the preset radial distance coefficient.

[0029] Furthermore, the formula for determining the radial parameter includes:

[0030]

[0031] or,

[0032] Wherein, R(r) is the radial parameter, r is the preset radial distance, and RADIUS is the preset radial distance coefficient.

[0033] The present invention also provides a single-particle transient simulation device, comprising:

[0034] The acquisition unit is used to acquire preset parameters of particle incidence, particle incidence depth, orbital path coefficient, time parameters, and electron-hole pair density.

[0035] The control unit is used to determine the charge generation time of the particle according to the time parameter, and to determine the change of the particle on the orbital path according to the particle incident depth and the orbital path coefficient.

[0036] The control unit is also used to simulate the electron-hole pair generation rate based on the radial parameter, the charge generation time, the change, the electron-hole pair density, and a preset electron-hole pair generation rate model.

[0037] The single-particle transient simulation device of the present invention has similar technical effects to the above-mentioned single-particle transient simulation method, and will not be described in detail here.

[0038] The present invention also provides a computing device, including a memory and a processor:

[0039] The memory is used to store computer programs;

[0040] The processor is configured to implement the single-particle transient simulation method as described above when executing the computer program.

[0041] The computing device described in this invention has similar technical effects to the single-particle transient simulation method described above, and will not be elaborated further here.

[0042] The present invention also provides a computer-readable storage medium storing a computer program, which is read and executed by a processor to implement the single-particle transient simulation method as described above.

[0043] The computer-readable storage medium of this invention has similar technical effects to the above-mentioned single-particle transient simulation method, and will not be described in detail here. Attached Figure Description

[0044] Figure 1 This is a flowchart of the single-particle transient simulation method described in an embodiment of the present invention;

[0045] Figure 2 A single-event transient plot obtained using the single-event transient simulation method of the present invention in a MOS device;

[0046] Figure 3 This is a single-event transient diagram obtained using the single-event transient simulation method of the present invention in a PN device. Detailed Implementation

[0047] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0048] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of the invention described herein can be implemented in sequences other than those illustrated or described herein.

[0049] In the description of this specification, references to terms such as "embodiment," "one embodiment," and "one implementation" indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or implementation is included in at least one embodiment or illustrative implementation of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or implementation. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or implementations.

[0050] Combination Figure 1 As shown in the figure, this invention proposes a single-particle transient simulation method, including the following steps:

[0051] Obtain the preset radial parameters of particle incidence, particle incidence depth, orbital path coefficient, time parameters, and electron-hole pair density;

[0052] The time of charge generation of the particle is determined based on the time parameter, and the change of the particle on the orbital path is determined based on the particle incident depth and the orbital path coefficient.

[0053] The electron-hole pair generation rate is simulated based on the radial parameter, the charge generation time, the change, the electron-hole pair density, and a preset electron-hole pair generation rate model.

[0054] In this embodiment, the preset radial parameters of particle incidence, particle incidence depth, orbital path coefficient, time parameters, and electron-hole pair density can be set according to the actual simulation conditions.

[0055] The time parameters may include the continuous generation time of electron-hole pairs, the delay time of electron-hole pair generation by particle incident, and the current time, thereby determining the charge generation time based on the above time parameters.

[0056] The orbital path coefficients are set based on the particle incident orbits. Each orbit is specified by the entry point position (x0, y0, z0) and the exit point position (x1, y1, z1). Assuming it is a cylinder, its radius can be defined by the Radius parameter. Thus, the changes of the particle on the orbital path are simulated based on the preset example incident depth and orbital path coefficients.

[0057] Electron-hole pair density specifically reflects the number of electron-hole pairs per cubic centimeter.

[0058] In this embodiment, by combining preset radial parameters, charge generation time, changes, electron-hole pair density, and a pre-constructed preset electron-hole pair generation rate model, single-particle transient simulation is performed to obtain the electron-hole pair generation rate. This realizes the simulation of the changes in electrical performance of the device under single-particle effects, which facilitates researchers to study the degradation law and effect mechanism of the device more deeply, and further facilitates the targeted development of radiation-resistant technologies for semiconductor devices.

[0059] In an optional embodiment of the present invention, the electron-hole pair density includes a first electron-hole pair density and a second electron-hole pair density, the variation includes a first orbital path variation parameter and a second orbital path variation parameter, and the preset electron-hole pair generation rate model includes:

[0060] G(r,l,t)=(DENSITY·L1(l)+S·B.DENSITY·L2(l))·R(r)·T(t);

[0061] Wherein, G(r, l, t) is the electron-hole pair generation rate, DENSITY is the first electron-hole pair density, B.DENSITY is the second electron-hole pair density, S is the scaling parameter, L1(l) is the first orbital path variation parameter, L2(l) is the second orbital path variation parameter, R(r) is the radial parameter, and T(t) is the charge generation time.

[0062] In an optional embodiment of the present invention, the time parameter includes the continuous generation time of electron-hole pairs, the delay time of particle incident generation of electron-hole pairs, and the current time; determining the charge generation time of the particle according to the time parameter includes:

[0063] When the continuous generation of electron-hole pairs is equal to 0, the charge generation time is determined by the particle incident electron-hole pair generation delay time, the current time, and the first charge generation time determination formula.

[0064] When the continuous generation time of electron-hole pairs is greater than 0, the charge generation time is obtained by the particle incident generation delay time of electron-hole pairs, the continuous generation time of electron-hole pairs, the current time, and the second charge generation time determination formula.

[0065] Specifically, the charge generation time is controlled by two functions and the continuous generation of electron-hole pairs time parameter. For example, when the continuous generation of electron-hole pairs time is 0, the charge generation time is determined by the first charge generation time determination formula.

[0066] When the delay time for generating electron-hole pairs from particle incident is 6e-12, and the continuous generation time of electron-hole pairs is 1e-12, the formula for determining the second charge generation time yields the charge generation time.

[0067] In this embodiment, different methods are used to determine the charge generation time for different continuous electron-hole pair generation times, which can make the charge generation time closer to the charge generation time to be simulated and improve the accuracy of the simulation.

[0068] In an optional embodiment of the present invention, the formula for determining the first charge generation time includes:

[0069] T(t) = deltafunction(t-t0);

[0070] The formula for determining the second charge generation time includes:

[0071]

[0072] Where T(t) is the charge generation time, t is the current time, t0 is the delay time for the generation of electron-hole pairs by the particle incident, and t c The continuous generation of electron-hole pairs is the time, and π is the mathematical constant pi.

[0073] In an optional embodiment of the present invention, the formula for determining the first orbital path change parameter includes:

[0074] L1(l)=A1+A2·l+A3exp(A4·l);

[0075] The formula for determining the second orbital path variation parameters includes:

[0076] L2(l)=B1(B2+l·B3) B4 ;

[0077] Wherein, A1, A2, A3, A4, B1, B2, B3 and B4 represent the orbital path coefficients, and l represents the particle incident depth.

[0078] Specifically, for example, A1 is 1, A2 is 0, A3 is 0, A4 is 0, B1 is 1, B2 is 1, B3 is 0, B4 is 0, and l is 10μm. The first orbital path change parameters and the second orbital path change parameters are obtained according to the formula for determining the first orbital path change parameters and the formula for determining the second orbital path change parameters.

[0079] In an optional embodiment of the present invention, the formula for determining the scaling parameter includes:

[0080]

[0081] Where q is the amount of charge, π is the mathematical constant pi, and RADIUS is the preset radial distance coefficient.

[0082] In an optional embodiment of the present invention, the formula for determining the radial parameter includes:

[0083]

[0084] or,

[0085] Wherein, R(r) is the radial parameter, r is the preset radial distance, and RADIUS is the preset radial distance coefficient.

[0086] Specifically, r is the radial distance from the trajectory center to the point, and RADIUS is a user-defined parameter.

[0087] Reference Figure 2 and Figure 3 As shown, by setting various parameters and combining the single-event transient simulation method of the present invention, simulations were performed on MOS devices and PN devices, as follows. Figure 2 and Figure 3 The image shows a particle impact perpendicular to the surface along the y-plane, with only the y-coordinate changing. The impact radius is 0.05 μm, and the LET value is 75 MeV-cm² / mg (B. DENSITY = 0.5). The impact delay time is 60 ps, ​​the characteristic time of the Gaussian distribution is 10 ps, ​​and the trajectory of the impacting particle extends from y = 0 to y = 10 μm, generating electron-hole pairs along its entire length.

[0088] Another embodiment of the present invention provides a single-particle transient simulation device, comprising:

[0089] The acquisition unit is used to acquire preset parameters of particle incidence, particle incidence depth, orbital path coefficient, time parameters, and electron-hole pair density.

[0090] The control unit is used to determine the charge generation time of the particle according to the time parameter, and to determine the change of the particle on the orbital path according to the particle incident depth and the orbital path coefficient.

[0091] The control unit is also used to simulate the electron-hole pair generation rate based on the radial parameter, the charge generation time, the change, the electron-hole pair density, and a preset electron-hole pair generation rate model.

[0092] The single-particle transient simulation measurement device of the present invention has similar technical effects to the above-mentioned single-particle transient simulation measurement method, and will not be described in detail here.

[0093] Another embodiment of the present invention provides a computing device, including a memory and a processor:

[0094] The memory is used to store computer programs;

[0095] The processor is configured to implement the single-particle transient simulation method as described above when executing the computer program.

[0096] The computing device in this invention has similar technical effects to the above-mentioned single-particle transient simulation measurement method, and will not be described in detail here.

[0097] Another embodiment of the present invention provides a computer-readable storage medium storing a computer program, which is read and executed by a processor to implement the single-particle transient simulation method as described above.

[0098] The computer-readable storage medium of this invention has similar technical effects to the above-mentioned single-particle transient simulation measurement method, and will not be described in detail here.

[0099] Generally, computer instructions for implementing the methods of the present invention can be carried on any combination of one or more computer-readable storage media. Non-transitory computer-readable storage media can include any computer-readable medium except for signals themselves that are temporarily propagating.

[0100] Computer-readable storage media can be, for example—but not limited to—electrical, magnetic, optical, electromagnetic, infrared, or semiconductor systems, apparatuses, or devices, or any combination thereof. More specific examples (a non-exhaustive list) of computer-readable storage media include: electrical connections having one or more wires, portable computer disks, hard disks, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), optical fiber, portable compact disk read-only memory (CD-ROM), optical storage devices, magnetic storage devices, or any suitable combination thereof. In this document, a computer-readable storage medium can be any tangible medium that contains or stores a program that can be used by or in connection with an instruction execution system, apparatus, or device.

[0101] Program code for performing the operations of this invention can be written in one or more programming languages ​​or a combination thereof. These programming languages ​​include object-oriented programming languages—such as Java, Smalltalk, and C++—as well as conventional procedural programming languages—such as the "C" language or similar programming languages. In particular, Python, suitable for neural network computation, and platform frameworks such as TensorFlow and PyTorch can be used. The program code can be executed entirely on the user's computer, partially on the user's computer, as a standalone software package, partially on the user's computer and partially on a remote computer, or entirely on a remote computer or server. In cases involving remote computers, the remote computer can be connected to the user's computer via any type of network—including a local area network (LAN) or a wide area network (WAN)—or can be connected to an external computer (e.g., via the Internet using an Internet service provider).

[0102] While the disclosure is as stated above, its scope of protection is not limited thereto. Those skilled in the art can make various changes and modifications without departing from the spirit and scope of this disclosure, and all such changes and modifications will fall within the protection scope of this invention.

Claims

1. A single event transient simulation method, characterized by, The method comprises: obtaining a radial parameter, a particle incidence depth, an orbit path coefficient, a time parameter and an electron-hole pair density of preset particle incidence; determining a charge generation time of the particle according to the time parameter and determining a change of the particle on an orbit path according to the particle incidence depth and the orbit path coefficient; simulating an electron-hole pair generation rate according to the radial parameter, the charge generation time, the change, the electron-hole pair density and a preset electron-hole pair generation rate model; the electron-hole pair density comprises a first electron-hole pair density and a second electron-hole pair density, the change comprises a first orbit path change parameter and a second orbit path change parameter, and the preset electron-hole pair generation rate model comprises: ； wherein, is the second electron-hole pair density, S is a scaling parameter, is the second electron-hole pair density, S is a scaling parameter, is the first orbital path change parameter, is the second orbital path change parameter, R(r) is the radial parameter, T(t) is the charge generation time.

2. The single event transient simulation method of claim 1, wherein, the time parameter comprises a continuous electron-hole pair generation time, a particle incidence electron-hole pair generation delay time and a current time; and the determination of the charge generation time according to the time parameter comprises: when the continuous electron-hole pair generation time is equal to 0, determining the charge generation time through a first charge generation time determination formula based on the particle incidence electron-hole pair generation delay time, the current time and the first charge generation time; when the continuous electron-hole pair generation time is greater than 0, obtaining the charge generation time through a second charge generation time determination formula based on the particle incidence electron-hole pair generation delay time, the continuous electron-hole pair generation time, the current time and a second charge generation time.

3. The single event transient simulation method of claim 2, wherein, the first charge generation time determination formula comprises: ； the second charge generation time determination formula comprises: ； Wherein, T(t) is the charge generation time, t is the current time, t0 is the particle incidence electron-hole pair generation delay time, t C is the sustained electron-hole pair generation time, and π is the circular constant.

4. The single event transient simulation method of claim 1, wherein, the determination formula of the first orbit path change parameter comprises: ； the determination formula of the second orbit path change parameter comprises: ； wherein A1, A2, A3, A4, B1, B2, B3, and B4 represent the track-path coefficients of the particles, respectively represents the particle penetration depth.

5. The single event transient simulation method of claim 1, wherein, the determination formula of the scaling parameter comprises: ； wherein q is a charge quantity, π is a circular constant, and RADIUS is a preset radial distance coefficient.

6. The single event transient simulation method of claim 1, wherein, the determination formula of the radial parameter comprises: ； or, ; wherein, r is a preset radial distance, and RADIUS is a preset radial distance coefficient.

7. A single event transient simulation apparatus, comprising: The method comprises: an obtaining unit configured to obtain a radial parameter, a particle incidence depth, an orbit path coefficient, a time parameter and an electron-hole pair density of preset particle incidence; a control unit configured to determine a charge generation time of the particle according to the time parameter and determine a change of the particle on an orbit path according to the particle incidence depth and the orbit path coefficient; the control unit is further configured to simulate an electron-hole pair generation rate according to the radial parameter, the charge generation time, the change, the electron-hole pair density and a preset electron-hole pair generation rate model; wherein the electron-hole pair density comprises a first electron-hole pair density and a second electron-hole pair density, the change comprises a first orbit path change parameter and a second orbit path change parameter, and the preset electron-hole pair generation rate model comprises: ； wherein, is the first electron-hole pair density, DENSITY is the first electron-hole pair density, is the second electron-hole pair density, S is a scaling parameter, is the first orbital path change parameter, is the second orbital path change parameter, R(r) is the radial parameter, T(t) is the charge generation time.

8. A computing device, comprising: a memory and a processor: the memory is configured to store a computer program; the processor is configured to implement the single event transient simulation method according to any one of claims 1-6 when executing the computer program.

9. A computer-readable storage medium, characterized in that, The computer readable storage medium stores a computer program, and the computer program is read and run by the processor, and a single event transient simulation method as claimed in any one of claims 1-6 is realized.

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