Display panel

Abstract

This application discloses a display panel. The display panel includes at least one photosensitive device, which includes a switching element, a first photosensitive element, and a second photosensitive element. The first photosensitive element includes a first electrode, a first photosensitive portion, and a first protective electrode; the second photosensitive element includes a second electrode, a second photosensitive portion, and a second protective electrode; the switching element includes a source and a drain; the first electrode and the second electrode are located on the same layer and connected to each other, and the first photosensitive portion and the second photosensitive portion are located on the same layer and spaced apart, and both the first photosensitive portion and the second photosensitive portion are connected to the source or the drain. This application provides a photosensitive device with a novel structure, which can increase the photosensitive area of ​​the photosensitive device, improve the electrical signal quantity, and simplify the film structure of the photosensitive device.

Description

Technical Field

[0001] This application relates to the field of display technology, specifically to a display panel. Background Technology

[0002] Fingerprint recognition has become a standard feature in most display devices such as mobile phones, tablets, and laptops. Currently, fingerprint recognition in display devices is gradually shifting from capacitive to optical fingerprint recognition. Optical fingerprint recognition uses the refraction and reflection of light to create an image of the user's fingerprint, and then identifies fingerprint features through image recognition. It features high imaging resolution and relatively easy image recognition, and can be placed under the display screen to form in-display fingerprint recognition.

[0003] Existing photosensitive devices use photosensitive elements to detect light, which are semiconductor devices that convert received light signals into electrical signals. However, as pixel resolution increases, the in-plane light-emitting units compress the area of ​​the photosensitive element, resulting in lower photoelectric signal intensity and affecting detection sensitivity. Summary of the Invention

[0004] This application provides a display panel to solve the technical problem that the small area of ​​the photosensitive element leads to a low electrical signal quantity, which affects the detection sensitivity.

[0005] This application provides a display panel, comprising: at least one photosensitive device, the photosensitive device comprising: a switching element, a first photosensitive element, and a second photosensitive element; the display panel further comprising:

[0006] substrate;

[0007] A first conductive layer is disposed on the substrate, and the first conductive layer includes a first electrode and a second electrode connected to each other.

[0008] A photosensitive layer is disposed on the side of the first conductive layer away from the substrate. The photosensitive layer includes a first photosensitive portion disposed corresponding to the first electrode and a second photosensitive portion disposed corresponding to the second electrode, and the first photosensitive portion and the second photosensitive portion are disposed at intervals. The photosensitive layer includes a metal oxide semiconductor.

[0009] An insulating layer is disposed between the first conductive layer and the photosensitive layer;

[0010] A second conductive layer is disposed on the side of the photosensitive layer away from the substrate. The second conductive layer includes a first protective electrode and a second protective electrode. The first protective electrode is electrically connected to the first photosensitive part, and the second protective electrode is electrically connected to the second photosensitive part.

[0011] A third conductive layer is disposed on the side of the second conductive layer away from the substrate. The third conductive layer includes the source and drain of the switching element. Both the first and second protection electrodes are electrically connected to the source or drain of the switching element.

[0012] The first photosensitive element includes the first electrode, the first photosensitive portion, and the first protective electrode; the second photosensitive element includes the second electrode, the second photosensitive portion, and the second protective electrode.

[0013] Optionally, in some embodiments of this application, the display panel further includes:

[0014] A first active layer is disposed between the substrate and the photosensitive layer. The first active layer includes a first active portion of the switching element. The source and drain of the switching element are both electrically connected to the first active portion. The first active portion includes a polysilicon semiconductor or a metal oxide semiconductor.

[0015] Optionally, in some embodiments of this application, the photosensitive device further includes: a storage capacitor;

[0016] The first conductive layer further includes a first capacitor electrode of the storage capacitor, and the first capacitor electrode is electrically connected to both the first electrode and the second electrode;

[0017] The third conductive layer further includes a second capacitor electrode of the storage capacitor. The second capacitor electrode is electrically connected to both the first protection electrode and the second protection electrode, and the second capacitor electrode and the first capacitor electrode are at least partially overlapped.

[0018] Optionally, in some embodiments of this application, the display panel further includes: a fourth conductive layer, the fourth conductive layer including a conductive portion, wherein the orthographic projection of the conductive portion on the substrate partially overlaps with the orthographic projection of the first electrode and / or the second electrode on the substrate.

[0019] Optionally, in some embodiments of this application, the electron mobility of the metal oxide semiconductor in the photosensitive layer is greater than or equal to 10 cm² / Vs, and the thickness of the insulating layer is 5 nanometers to 15 nanometers.

[0020] Optionally, in some embodiments of this application, the display panel further includes: a pixel driving circuit, the pixel driving circuit including a first driving transistor and a second driving transistor;

[0021] The display panel also includes:

[0022] A second active layer is disposed between the substrate and the photosensitive layer. The second active layer includes a second active portion of the first driving transistor, and the second active portion includes a polysilicon semiconductor.

[0023] A third active layer is disposed between the second active layer and the photosensitive layer. The third active layer includes a third active portion of the second driving transistor, and the third active portion includes a metal-oxide-semiconductor.

[0024] A conductive layer is disposed between the second active layer and the third active layer, the conductive layer including the second gate of the first driving transistor, the second gate being disposed at least partially overlapping the second active portion;

[0025] The second conductive layer further includes a third gate of the second driving transistor, the third gate being disposed at least partially overlapping the third active portion.

[0026] Optionally, in some embodiments of this application, the first active portion includes a polysilicon semiconductor;

[0027] The second active layer further includes the first active portion, and the conductive layer further includes the first gate of the switching element, wherein the first gate is disposed at least partially overlapping the first active portion.

[0028] Optionally, in some embodiments of this application, the first active portion includes a metal-oxide-semiconductor.

[0029] The third active layer further includes the first active portion, the conductive layer further includes the fourth gate of the switching element, the second conductive layer further includes the first gate of the switching element, the fourth gate is at least partially overlapping the first active portion, and the first gate is at least partially overlapping the first active portion.

[0030] Optionally, in some embodiments of this application, the display panel further includes a plurality of light-emitting units, which are arranged in multiple rows along a first direction and in multiple columns along a second direction;

[0031] Among them, multiple cross regions are formed between the multiple rows of light-emitting units and the multiple columns of light-emitting units, and each cross region is provided with at most one first photosensitive element or one second photosensitive element.

[0032] Optionally, in some embodiments of this application, the first photosensitive element and the second photosensitive element are respectively located in two adjacent intersection regions, and the two adjacent intersection regions are located on the same side of the same light-emitting unit.

[0033] Optionally, in some embodiments of this application, the display panel includes a plurality of the photosensitive devices;

[0034] In this arrangement, multiple first photosensitive elements and multiple second photosensitive elements located in the same row are arranged alternately, multiple first photosensitive elements and multiple second photosensitive elements located in the same column are arranged alternately, and each first photosensitive element is connected in parallel with an adjacent second photosensitive element located in the same row and on the same side, or each first photosensitive element is connected in parallel with an adjacent second photosensitive element located in the same column and on the same side.

[0035] Alternatively, multiple first photosensitive elements and multiple second photosensitive elements located in the same row may be arranged alternately, and all of them located in the same column may be either first photosensitive elements or second photosensitive elements. Each first photosensitive element is connected in parallel with an adjacent second photosensitive element located in the same row and on the same side.

[0036] Optionally, in some embodiments of this application, the photosensitive device further includes a third photosensitive element;

[0037] The third photosensitive element includes a third electrode, a third protective electrode, and a third photosensitive part located between the third electrode and the third protective electrode; the third electrode and the first electrode are located on the same layer and connected to each other, the third photosensitive part and the first photosensitive part are located on the same layer and spaced apart, and the third protective electrode is connected to the source electrode or the drain electrode;

[0038] The first photosensitive element, the second photosensitive element, and the third photosensitive element are respectively located in the three intersecting regions at the three vertices of the same light-emitting unit.

[0039] This application discloses a display panel. The display panel includes at least one photosensitive device, which includes a switching element, a first photosensitive element, and a second photosensitive element. The first photosensitive element includes a first electrode, a first photosensitive portion, and a first protective electrode; the second photosensitive element includes a second electrode, a second photosensitive portion, and a second protective electrode. Because the first and second electrodes are connected, and both the first and second photosensitive portions are connected to the source or drain of the switching element, the first and second photosensitive elements are designed in parallel, increasing the photosensitive area of ​​the photosensitive device, thereby increasing the electrical signal quantity and detection sensitivity. Furthermore, because the first and second electrodes and the first and second photosensitive portions are arranged in the same layer, the film structure of the photosensitive device is simplified. Furthermore, since an insulating layer is provided between the first electrode and the first photosensitive part, the potential barrier difference between the first electrode and the first photosensitive part can be reduced, allowing electrons to tunnel and form a conductive path; similarly, since an insulating layer is provided between the second electrode and the second photosensitive part, the potential barrier difference between the second electrode and the second photosensitive part can be reduced, allowing electrons to tunnel and form a conductive path; thereby improving the photosensitivity of the photosensitive device. Attached Figure Description

[0040] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0041] Figure 1 This is a first structural schematic diagram of the display panel provided in this application;

[0042] Figure 2 This is a circuit diagram of the photosensitive device provided in this application;

[0043] Figure 3 This is a schematic diagram of the second structure of the display panel provided in this application;

[0044] Figure 4 This is a schematic diagram of the third structure of the display panel provided in this application;

[0045] Figure 5 This is a schematic diagram of the fourth structure of the display panel provided in this application;

[0046] Figure 6 This is a fifth structural schematic diagram of the display panel provided in this application;

[0047] Figure 7 This is a sixth structural schematic diagram of the display panel provided in this application;

[0048] Figure 8 This is a schematic diagram of the seventh structure of the display panel provided in this application;

[0049] Figure 9 This is the eighth structural schematic diagram of the display panel provided in this application;

[0050] Figure 10 This is a ninth structural schematic diagram of the display panel provided in this application;

[0051] Figure 11 This is a first planar schematic diagram of the display panel provided in this application;

[0052] Figure 12 This is a schematic diagram of the second plane of the display panel provided in this application;

[0053] Figure 13 This is a schematic diagram of the third plane of the display panel provided in this application. Detailed Implementation

[0054] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0055] In the description of this application, it should be understood that the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, features defined with "first" and "second," etc., may explicitly or implicitly include one or more of the stated features, and thus should not be construed as limiting this application. Furthermore, it should be noted that unless otherwise expressly specified and limited, the terms "connected" and "linked" should be interpreted broadly, for example, they can refer to mechanical connections or electrical connections; they can refer to direct connections or indirect connections through an intermediate medium; they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0056] This application provides a display panel, which will be described in detail below. It should be noted that the order of description of the following embodiments is not intended to limit the preferred order of the embodiments of this application.

[0057] Please see Figure 1 , Figure 1 This is a first structural schematic diagram of the display panel provided in this application. In the embodiments of this application, the display panel 100 includes at least one photosensitive device ST. The photosensitive device ST includes a switching element T, a first photosensitive element S1, and a second photosensitive element S2.

[0058] The display panel 100 also includes a substrate 10, a first conductive layer 25, an insulating layer 26, a photosensitive layer 27, a second conductive layer 28, and a third conductive layer 30.

[0059] The first conductive layer 25 is disposed on the substrate 10. The first conductive layer 25 includes a first electrode 251 and a second electrode 252 connected to each other.

[0060] A photosensitive layer 27 is disposed on the side of the first conductive layer 25 away from the substrate 10. The photosensitive layer 27 includes a first photosensitive portion 271 corresponding to the first electrode 251 and a second photosensitive portion 272 corresponding to the second electrode 252. The photosensitive layer 27 comprises a metal-oxide-semiconductor. The first photosensitive portion 271 and the second photosensitive portion 272 are disposed at intervals.

[0061] An insulating layer 26 is disposed between the first conductive layer 25 and the photosensitive layer 27. For example, the insulating layer 26 includes a first insulating portion 261 and a second insulating portion 262. The first insulating portion 261 is located at least between the first electrode 251 and the first photosensitive portion 271. The second insulating portion 262 is located at least between the second electrode 252 and the second photosensitive portion 272.

[0062] The second conductive layer 28 is disposed on the side of the photosensitive layer 27 away from the substrate 10. The second conductive layer 28 includes a first protective electrode 281 and a second protective electrode 282. The first protective electrode 281 is electrically connected to the first photosensitive portion 271. The second protective electrode 282 is electrically connected to the second photosensitive portion 272.

[0063] The third conductive layer 30 is disposed on the side of the second conductive layer 28 away from the substrate 10. The third conductive layer 30 includes a source 301 and a drain 302 for the switching element T. Both the first protection electrode 281 and the second protection electrode 282 are connected to either the source 301 or the drain 302. For example, both the first protection electrode 281 and the second protection electrode 282 are connected to the source 301. Alternatively, both the first protection electrode 281 and the second protection electrode 282 are connected to the drain 302.

[0064] The first photosensitive element S1 includes a first electrode 251, a first insulating portion 261, a first photosensitive portion 271, and a first protective electrode 281. The second photosensitive element S2 includes a second electrode 252, a second insulating portion 262, a second photosensitive portion 272, and a second protective electrode 282.

[0065] The first electrode 251 and the second electrode 252 can be directly connected, meaning that the first electrode 251 and the second electrode 252 are an integral structure. The first electrode 251 and the second electrode 252 can also be connected via bridging wires and vias; this application does not specifically limit this connection. The following embodiments of this application use the direct connection of the first electrode 251 and the second electrode 252 as an example for illustration, but this should not be construed as limiting the scope of this application.

[0066] In this embodiment, a photosensitive device ST includes at least two photosensitive elements, namely a first photosensitive element S1 and a second photosensitive element S2. Since the first electrode 251 and the second electrode 252 are connected, and both the first protection electrode 281 and the second protection electrode 282 are connected to the source electrode 301 or the drain electrode 302, the first photosensitive element S1 and the second photosensitive element S2 are connected in parallel, increasing the photosensitive area of ​​the photosensitive device ST and thus improving the electrical signal quantity and detection sensitivity. Furthermore, since the first electrode 251 and the second electrode 252 are arranged in the same layer, the first photosensitive portion 271 and the second photosensitive portion 272 are arranged in the same layer, and the first protection electrode 281 and the second protection electrode 282 are arranged in the same layer, the film structure of the photosensitive device ST is simplified. Furthermore, since a first insulating portion 261 is provided between the first electrode 251 and the first photosensitive portion 271, the potential barrier difference between the first electrode 251 and the first photosensitive portion 271 can be reduced, allowing electron tunneling to form a conductive path; similarly, since a second insulating portion 262 is provided between the second electrode 252 and the second photosensitive portion 272, the potential barrier difference between the second electrode 252 and the second photosensitive portion 272 can be reduced, allowing electron tunneling to form a conductive path; thus, compared to the case in related technologies where forming a metal-semiconductor junction requires a high work function metal, this application can form a photosensitive device ST using a first conductive layer 25 made of conventional materials, thereby improving the photosensitivity of the photosensitive device ST.

[0067] It is understandable that when the wiring space in the display panel 100 is limited, the photosensitive areas of the first photosensitive element S1 and the second photosensitive element S2 will be designed to be relatively small. Consequently, the first photosensitive part 271 and the second photosensitive part 272 absorb less light signal and generate a smaller current signal. In the embodiments of this application, a photosensitive device ST includes at least a first photosensitive element S1 and a second photosensitive element S2 designed in parallel, increasing the overall photosensitive area of ​​the photosensitive device ST, improving the electrical signal quantity, and thus enhancing the detection sensitivity.

[0068] It should be noted that the embodiments of this application are illustrated using an example of a photosensitive device ST comprising two photosensitive elements (a first photosensitive element S1 and a second photosensitive element S2) connected in parallel, but this should not be construed as a limitation of this application. For example, a photosensitive device ST may include three, five, or more photosensitive elements connected in parallel.

[0069] In this embodiment, the switching element T further includes a first gate 253 and a first active portion 231. The first active portion 231 and the first gate 253 are correspondingly disposed. The source 301 and the drain 302 are respectively connected to the first active portion 231. The film structure of the first gate 253, the first active portion 231, the source 301, and the drain 302 will be described in the following embodiments and will not be repeated here.

[0070] In this embodiment, the photosensitive device ST further includes at least one storage capacitor C. The first capacitor plate of the storage capacitor C is electrically connected to both the first electrode 251 and the second electrode 252. The second capacitor plate of the storage capacitor C is connected to either the source electrode 301 or the drain electrode 302.

[0071] For example, the photosensitive device ST includes only one storage capacitor C, and the first photosensitive element S1 and the second photosensitive element S2 share the same storage element C, further simplifying the structure of the photosensitive device ST.

[0072] For details, please refer to Figure 1 and Figure 2 , Figure 2 This is a circuit diagram of the photosensitive device provided in this application. The photosensitive device ST includes a first photosensitive element S1, a second photosensitive element S2, a storage capacitor C, and a switching element T.

[0073] In this setup, the first electrode 251 and the second electrode 252 are connected to a bias voltage VBIas. When light enters the first photosensitive element S1 and the second photosensitive element S2 in the photosensitive device ST, the first photosensitive part 271 in the first photosensitive element S1 and the second photosensitive part 272 in the second photosensitive element S2 absorb the light signal and convert the received light signal into an electrical signal. The electrical signal is stored in a storage capacitor C. When the storage capacitor C is fully charged, the switching element T turns on, and the storage capacitor C discharges, transmitting the signal generated by the first photosensitive element S1 and the second photosensitive element S2 to a detection signal line (not shown in the figure). The detection signal line then transmits the signal to the corresponding circuit for processing, thereby realizing the detection of light intensity.

[0074] In this embodiment, the material of the first active part 231 can be single-crystal silicon, low-temperature polycrystalline silicon, or metal oxide semiconductor. The metal oxide semiconductor can be IGZO (indium gallium zinc oxide), IGZTO (indium gallium zinc tin oxide), IZO, IGO (gallium indium oxide), IGTO (indium gallium tin oxide), IZTO (indium zinc tin oxide), ITO, ATZO (zinc aluminum tin oxide), AIZO (zinc aluminum indium oxide), etc.

[0075] In some embodiments, the electron mobility of the metal oxide semiconductor of the photosensitive layer 27 is greater than or equal to 10 cm⁻¹. 2 / Vs. Specifically, both the first photosensitive part 271 and the second photosensitive part 272 are made of IGZO. IGZO has high mobility. IGZO has good photosensitivity and low resistance in the visible light band, thus improving the photosensitivity performance of the photosensitive device ST.

[0076] In some embodiments, the first active portion 231, the first photosensitive portion 271, and the second photosensitive portion 272 are all made of IGZO. Thus, the first photosensitive portion 271 and the second photosensitive portion 272 can share the same IGZO substrate film layer.

[0077] In some embodiments, the materials of the first active portion 231, the first photosensitive portion 271, and the second photosensitive portion 272 may be different. For example, the materials of the first photosensitive portion 271 and the second photosensitive portion 272 may be indium gallium zinc oxide (IGZO), while the material of the first active portion 231 may be single-crystal silicon, low-temperature polycrystalline silicon, or other non-IGZO oxide semiconductor materials. In this way, the performance requirements of the switching element T, the first photosensitive element S1, and the second photosensitive element S2 can be simultaneously met.

[0078] In some embodiments, the orthographic projection of the first protective electrode 281 on the substrate 10 overlaps with the orthographic projection of the first photosensitive portion 271 on the substrate 10; the orthographic projection of the second protective electrode 282 on the substrate 10 overlaps with the orthographic projection of the second photosensitive portion 272 on the substrate 10. Therefore, the same photomask can be used for patterning to form the photosensitive layer 27 and the second conductive layer 28, simplifying the manufacturing process. Of course, this application is not limited to this.

[0079] In this embodiment, the second photosensitive element S2 is located on the side of the first photosensitive element S1 away from the drain electrode 302. The first conductive layer 25 also includes a first capacitor electrode of the storage capacitor C. The first capacitor electrode is electrically connected to both the first electrode 251 and the second electrode 252. The third conductive layer 30 also includes a second capacitor electrode of the storage capacitor C. The second capacitor electrode is electrically connected to both the first protection electrode 281 and the second protection electrode 282. The second capacitor electrode and the first capacitor electrode are at least partially overlapped.

[0080] Specifically, the first capacitor electrode is part of the drain 302, and the second capacitor electrode is part of the first electrode 251. The orthographic projection of the drain 302 on the substrate 10 at least partially overlaps with the orthographic projection of the first electrode 251 on the substrate 10. That is, the drain 302 and the first electrode 251 at least constitute a storage capacitor C. Since the first electrode 251 and the second electrode 252 are connected, the first photosensitive element S1 and the second photosensitive element S2 share a storage capacitor C.

[0081] In this embodiment, the display panel 100 further includes a first active layer 23 and a gate insulating layer 24. The first active layer 23 is disposed on the side of the first conductive layer 25 near the substrate 10. The gate insulating layer 24 is disposed between the first active layer 23 and the first conductive layer 25. The first active layer 23 includes a first active portion 231. The first conductive layer 25 further includes a first gate 253. The first active portion 231 and the first gate 253 are correspondingly disposed.

[0082] In this embodiment, the first gate 253 is disposed on the same layer as the first electrode 251 and the second electrode 252, which can save one photomask and simplify the manufacturing process. At the same time, the thickness of the display panel 100 is reduced.

[0083] In one embodiment, the display panel 100 further includes an interlayer insulating layer 29. The interlayer insulating layer 29 is located between the first conductive layer 25 and the third conductive layer 30. The interlayer insulating layer 29 has a first via 29a, a second via 29b, and a third via 29c. The first via 29a penetrates the interlayer insulating layer 29 and extends to the side of the first active portion 231 away from the substrate 10. The source electrode 301 is connected to the first active portion 231 through the first via 29a. The second via 29b penetrates the interlayer insulating layer 29 and extends to the side of the first active portion 231 away from the substrate 10. The drain electrode 302 is connected to the first active portion 231 through the second via 29b. The third via 29c exposes the surface of the first protection electrode 281 away from the substrate 10. The drain electrode 302 is connected to the first protection electrode 281 through the third via 29c.

[0084] The first active portion 231 includes a source region, a drain region, and a channel region (not shown in the figure) located between the source region and the drain region. The source 301 is connected to the source region. The drain 302 is connected to the drain region. The source and drain regions are made conductive through ion doping or other methods, thus improving the conductivity of the source 301 and drain 302 with respect to the first active portion 231.

[0085] It should be noted that the embodiments of this application use a top-gate transistor as an example for illustrating the switching element T, but this should not be construed as limiting the scope of this application. In some embodiments of this application, the switching element T may also be a bottom-gate transistor or a dual-gate transistor.

[0086] In this embodiment, the substrate 10 may include, but is not limited to, a substrate 11, a barrier layer 12, a first insulating layer 13, and a second insulating layer 14 stacked sequentially from bottom to top. The substrate 11 may be made of glass or a flexible material. The barrier layer 12, the first insulating layer 13, and the second insulating layer 14 may be made of silicon oxide, silicon nitride, etc. The barrier layer 12, the first insulating layer 13, and the second insulating layer 14 serve to block water and oxygen.

[0087] In this embodiment, the first conductive layer 25 is made of a material with excellent conductivity and light-shielding properties. For example, the material of the first conductive layer 25 can be molybdenum, titanium, molybdenum / copper (stacked), molybdenum / titanium (stacked), or titanium / aluminum (stacked), etc. This embodiment utilizes a conductive material with light-shielding properties to form the first electrode 251 and the second electrode 252, which can prevent light from the substrate 10 side from entering the first photosensitive element S1 and the second photosensitive element S2, thereby improving the detection accuracy of the photosensitive device ST.

[0088] In this embodiment, the insulating layer 26 can be made of silicon nitride, silicon oxide, or the like. The insulating layer 26 is very thin, typically around 10 nanometers, for example, 5 to 15 nanometers. When the first photosensitive element S1 and the second photosensitive element S2 are working, electrons can pass through the first photosensitive element S1 and the second photosensitive element S2.

[0089] In this embodiment, the materials of the gate insulating layer 24 and the interlayer insulating layer 29 can be silicon oxide, silicon nitride, aluminum oxide, and their stacks.

[0090] In this embodiment, the second conductive layer 28 is a transparent conductive material, thereby ensuring that light can enter the first photosensitive element S1 and the second photosensitive element S2, improving the sensing sensitivity of the photosensitive device ST. For example, the material of the second conductive layer 28 can be ITO, IZO, etc.

[0091] In this embodiment, the display panel 100 further includes a fourth conductive layer 21 and a buffer layer 22. The fourth conductive layer 21 is disposed on the side of the first active layer 23 near the substrate 10. The buffer layer 22 is disposed between the first active layer 23 and the fourth conductive layer 21. The fourth conductive layer 21 includes a light-shielding portion 211. The light-shielding portion 211 is disposed corresponding to the first active portion 231. For example, the orthographic projection of the light-shielding portion 211 on the substrate 10 at least covers the orthographic projection of the channel portion of the first active portion 231 on the substrate 10.

[0092] The light-shielding part 211 can block light rays that enter from the substrate 10 away from the light-shielding part 211, thereby reducing the interference of external light rays on the first active part 231 and further improving the working performance of the photosensitive device ST.

[0093] In some embodiments, the light-shielding part 211 can be connected to the source 301 or the drain 302 to form an equipotential, which can prevent voltage changes on the light-shielding part 211 from affecting the electrical performance of the first active part 231.

[0094] In this embodiment, the third conductive layer 30 may further include an input electrode 303. The input electrode 303 is connected to the first electrode 251 or the second electrode 252. The input electrode 303 is used to connect a bias voltage V. bias .

[0095] For example, the interlayer insulating layer 29 also includes a connection hole 29d. The connection hole 29d extends to the surface of the second electrode 252 away from the substrate 10. The input electrode 303 is connected to the second electrode 252 through the connection hole 29d.

[0096] In this embodiment, the first conductive layer 25 further includes at least one scan line, which can be time-division multiplexed as a first electrode 251 and a second electrode 252. Time-division multiplexing means that the scan line can be used to transmit a scan signal, or it can be used as the first electrode 251 and the second electrode 252 to transmit a bias voltage Vbias. Specifically, the scan line is connected to both the gate driving circuit and the signal line that provides the bias voltage Vbias. During fingerprint recognition, the signal line transmits the bias voltage Vbias to the scan line; during display, the gate driving circuit provides a scan signal to the scan line.

[0097] This reduces the wiring in the display panel 100 and increases the size of the first photosensitive element S1 and the second photosensitive element S2, thereby increasing the photosensitive area. It should be noted that when the display panel 100 contains multiple photosensitive devices ST, each scan line is only reused for the first electrode 251 and the second electrode 252 connected in one photosensitive device ST.

[0098] Please see Figure 3 , Figure 3 This is a second structural schematic diagram of the display panel provided in this application. Figure 1 The difference in the display panel 100 shown is that, in this embodiment, the display panel 100 includes a fourth conductive layer 21. The fourth conductive layer 21 includes a conductive portion 212. The orthographic projection of the conductive portion 212 on the substrate 10 at least partially overlaps with the orthographic projection of the drain 302 on the substrate 10. That is, the conductive portion 212 and the drain 302 constitute a storage capacitor C.

[0099] In this embodiment, the conductive portion 212 and the drain 302 form a storage capacitor C, which can reduce the length of the first electrode 251 in the direction from the switching element T to the first photosensitive element S1. With a fixed cross-sectional area, reducing the length of the first electrode 251 reduces its resistance, thereby lowering the load on the first photosensitive element S1 and the second photosensitive element S2.

[0100] In addition, the fourth conductive layer 21 may also include a light-shielding portion 211. The conductive portion 212 and the light-shielding portion 211 are disposed in the same layer, which can save one photomask and simplify the manufacturing process. Of course, in some embodiments, the conductive portion 212 and the light-shielding portion 211 may also be disposed in different layers.

[0101] Please see Figure 4 , Figure 4 This is a third structural schematic diagram of the display panel provided in this application. Figure 1The difference between the display panel 100 shown is that, in this embodiment, the fourth conductive layer 21 further includes a conductive portion 212. The orthographic projection of the conductive portion 212 on the substrate 10 at least partially overlaps with the orthographic projection of the first electrode 251 and / or the second electrode 252 on the substrate 10. That is, the conductive portion 212 and the first electrode 251 and / or the second electrode 252 constitute a storage capacitor C.

[0102] It is understood that in this embodiment, the conductive portion 212, together with the first electrode 251 and / or the second electrode 252, forms a storage capacitor C. This reduces the extension length of the drain 302 from the switching element T to the first photosensitive element S1, thereby reducing the distance between the switching element T and the first photosensitive element S1 and reducing wiring in the display panel 100. Furthermore, since the conductive portion 212 is located below the first electrode 251 and / or the second electrode 252, the capacitance value of the storage capacitor C can be adjusted by adjusting the area of ​​the conductive portion 212 without occupying additional wiring space. Therefore, the wiring space for the first photosensitive element S1 and the second photosensitive element S2 can be increased, further increasing the photosensitive area of ​​the photosensitive device and improving sensitivity.

[0103] Please see Figure 5 , Figure 5 This is a schematic diagram of the fourth structure of the display panel provided in this application. Figure 1 The difference between the display panel 100 shown is that, in this application, the first active layer 23 includes a first active part 231 and a conductive electrode part 232.

[0104] The first active portion 231 and the first gate 253 are respectively disposed. The source 301 and the drain 302 are respectively connected to the first active portion 231. The orthographic projection of the electrode portion 232 on the substrate 10 overlaps with the orthographic projection of the first electrode 251 and / or the second electrode 252 on the substrate 10.

[0105] The electrode portion 232 can be made conductive through processes such as ion doping to improve its conductivity.

[0106] In this embodiment, a storage capacitor C is formed by a conductive electrode portion 232 and a first electrode 251 and / or a second electrode 252. On one hand, the distance between the switching element T and the first photosensitive element S1 can be reduced, reducing the wiring in the display panel 100, thereby increasing the wiring space for the first photosensitive element S1 and the second photosensitive element S2, further increasing the photosensitive area of ​​the photosensitive device, and improving sensitivity. On the other hand, since only a buffer layer 22 is provided between the electrode portion 232 and the first electrode 251 (second electrode 252), the distance between the two plates of the storage capacitor C is reduced, thereby increasing the capacitance value of the storage capacitor C.

[0107] Please see Figure 6 , Figure 6 This is a fifth structural schematic diagram of the display panel provided in this application. Figure 1 The difference in the display panel 100 shown is that, in this embodiment, the insulating layer 26 further includes a third insulating portion 263. The orthographic projections of the first insulating portion 261 and the second insulating portion 262 on the substrate 10 overlap with the orthographic projections of the first electrode 251 and the second electrode 252 on the substrate 10. The orthographic projection of the third insulating portion 263 on the substrate 10 overlaps with the orthographic projection of the first gate electrode 253 on the substrate 10.

[0108] In this embodiment, the same photomask can be used to pattern the first conductive layer 25 and the insulating layer 26, simplifying the manufacturing process. Furthermore, since the first insulating portion 261 covers the first electrode 251 and the second electrode 252, and the third insulating portion 263 covers the first gate electrode 253, the insulating layer 26 can protect the first electrode 251, the second electrode 252, and the first gate electrode 253 during the fabrication of the photosensitive layer 27, thereby improving the stability of the photosensitive device.

[0109] Please see Figure 7 , Figure 7 This is a sixth structural schematic diagram of the display panel provided in this application. Figure 1 The difference of the display panel 100 shown is at least that, in this embodiment of the application, the display panel 100 further includes a pixel driving circuit. The pixel driving circuit includes a first driving transistor T1 and a second driving transistor T2.

[0110] The display panel 100 also includes a second active layer 32, a third active layer 33, and a conductive layer 34.

[0111] The second active layer 32 is disposed between the substrate 10 and the photosensitive layer 27. The second active layer 32 includes a second active portion 321 of the first driving transistor T1. The second active portion 321 includes a polysilicon semiconductor.

[0112] The third active layer 33 is disposed between the second active layer 32 and the photosensitive layer 27. The third active layer 33 includes the third active portion 331 of the second driving transistor T2. The third active portion 331 includes a metal-oxide-semiconductor.

[0113] A conductive layer 34 is disposed between the second active layer 32 and the third active layer 33. The conductive layer 34 includes the second gate 341 of the first driving transistor T1. The second gate 341 is disposed in a manner that at least partially overlaps with the second active portion 321.

[0114] The second conductive layer 28 also includes a third gate 283 of the second driving transistor T2. The third gate 283 is disposed at least partially overlapping with the third active portion 331.

[0115] In some embodiments, please continue reading Figure 7 The first active layer 231 includes a polysilicon semiconductor. The second active layer 32 also includes the first active layer 231. The conductive layer 34 also includes a first gate 253 of the switching element T. The first gate 253 and the first active layer 231 are at least partially overlapped. That is, the first active layer 23 and the second active layer 32 are the same active layer.

[0116] The first conductive layer 25 further includes a third electrode 255. The third electrode 255, the second gate 341, and the first insulating layer 13 located between the third electrode 255 and the second gate 341 form a capacitor. The conductive layer 34 also includes a fifth gate 343 of the second driving transistor T2, that is, the second driving transistor T2 is a dual-gate structure.

[0117] The third conductive layer 30 further includes a first source 304 and a first drain 305 of the first driving transistor T1, and a second source 306 and a second drain 307 of the second driving transistor T2. The first drain 305 and the second source 306 are connected through vias.

[0118] In some embodiments, please refer to Figure 8 , Figure 8 This is a seventh structural schematic diagram of the display panel provided in this application. Figure 7 The difference in the display panel 100 shown is that, in this embodiment, the first active portion 231 includes a metal-oxide-semiconductor. The third active layer 33 also includes the first active portion 231.

[0119] The conductive layer 34 further includes a fourth gate 342 for the switching element T. The second conductive layer 28 further includes a first gate 253 for the switching element T. The fourth gate 342 at least partially overlaps with the first active portion 231. The first gate 253 at least partially overlaps with the first active portion 231. That is, the switching element T has a dual-gate structure.

[0120] Please see Figure 9 , Figure 9 This is the eighth structural schematic diagram of the display panel provided in this application. Figure 1 The difference in the display panel 100 shown is at least that, in this embodiment, the photosensitive layer 27 further includes a first active portion 231 of the switching element T. The gate insulating layer 24 has an opening 24a. The opening 24a exposes the side surface of the first photosensitive portion 271 and the second photosensitive portion 272 away from the substrate 10. The first protective electrode 281 and the second protective electrode 282 are disposed within the opening 24a.

[0121] In this embodiment, the first active portion 231, the first photosensitive portion 271, and the second photosensitive portion 272 are disposed on the same layer, which simplifies the manufacturing process. Simultaneously, forming the gate insulating layer 24 first, and then forming the first protective electrode 281 and the second protective electrode 282, avoids damage to the first active portion 231 during patterning of the second conductive layer 28, thereby improving the stability of the switching element T.

[0122] Furthermore, in some embodiments, please continue to refer to... Figure 9 The display panel 100 also includes a pixel circuit. The pixel circuit includes a first driving transistor T1 and a second driving transistor T2.

[0123] The photosensitive layer 27 further includes a first active portion 231 of the switching element T and a third active portion 331 of the second driving transistor T2. The first active portion 231 of the switching element T, the third active portion 331 of the second driving transistor T2, the first photosensitive portion 271, and the second photosensitive portion 272 are disposed in the same layer.

[0124] Specifically, the display panel 100 further includes a second active layer 32, a conductive layer 34, and a fifth conductive layer 31. The second active layer 32 is disposed between the substrate 10 and the photosensitive layer 27. The conductive layer 34 is disposed between the second active layer 32 and the photosensitive layer 27. The fifth conductive layer 31 is disposed on the side of the gate insulating layer 24 away from the substrate 10. The second active layer 32 includes a second active portion 321 of the first driving transistor T1. The second active portion 321 includes a polysilicon semiconductor. The conductive layer 34 includes a second gate 341 and an electrode portion 232 of the first driving transistor T1. The second gate 341 at least partially overlaps with the second active portion 321. The fifth conductive layer 31 includes a first gate 253 of the switching element T and a third gate 283 of the second driving transistor T2.

[0125] The first conductive layer 25 further includes a fourth gate 342 of the switching element T, a fifth gate 343 of the second driving transistor T2, and a third electrode 255. The third conductive layer 30 further includes a first source 304 and a first drain 305 of the first driving transistor T1, and a second source 306 and a second drain 307 of the second driving transistor T2. The first drain 305 and the second source 306 are connected through vias.

[0126] Please see Figure 10 , Figure 10 This is a schematic diagram of the ninth structure of the display panel provided in this application. Figure 9 The difference in the display panel 100 shown is that, in this embodiment, the second active portion 321 of the first driving transistor T1 and the first active portion 231 of the switching element T are disposed on the same layer. The third active portion 331, the first photosensitive portion 271, and the second photosensitive portion 272 of the second driving transistor T2 are disposed on the same layer.

[0127] Specifically, the second active layer 32 includes the second active portion 321 of the first driving transistor T1 and the first active portion 231 of the switching element T. The conductive layer 34 includes the second gate 341 of the first driving transistor T1 and the first gate 253 of the switching element T.

[0128] This application employs LTPO (Low Temperature Poly-Oxide) technology, which can reduce the power consumption of the display panel 100. Furthermore, by fabricating the switching element T and the photosensitive device ST in the same layer and using the same process as the in-plane LTPO structure, the thickness of the display panel 100 can be reduced, simplifying the manufacturing process.

[0129] Please see Figure 11 , Figure 11 This is a first planar schematic diagram of the display panel provided in this application. The display panel 100 also includes a plurality of light-emitting units 40. The plurality of light-emitting units 40 are arranged in multiple rows along a first direction Y and in multiple columns along a second direction X. The first direction Y and the second direction X intersect. For example, the first direction Y and the second direction X intersect perpendicularly.

[0130] Multiple cross regions 40a are formed between the multiple rows of light-emitting units 40 and the multiple columns of light-emitting units 40. Each cross region 40a is provided with at most a first photosensitive element S1 or a second photosensitive element S2.

[0131] In this embodiment, the first photosensitive element S1 and the second photosensitive element S2 are disposed in different intersection regions 40a, so that the first photosensitive element S1 and the second photosensitive element S2 are staggered from the light-emitting unit 40, thus avoiding affecting the display effect of the display panel. Furthermore, disposing the first photosensitive element S1 and the second photosensitive element S2 in different intersection regions 40a increases the wiring space for the first photosensitive element S1 and the second photosensitive element S2, thereby increasing the photosensitive area of ​​the first photosensitive element S1 and the second photosensitive element S2, and further improving the electrical signal quantity.

[0132] In this embodiment, each intersection region 40a may be provided with a first photosensitive element S1 or a second photosensitive element S2 to improve test sensitivity. Of course, the distribution density of the first photosensitive element S1 and the second photosensitive element S2 can also be set according to the actual product requirements.

[0133] like Figure 11 As shown, the first photosensitive element S1 and the second photosensitive element S2 are located in two adjacent intersecting regions 40a, respectively. The two adjacent intersecting regions 40a are located on the same side of the same light-emitting unit 40.

[0134] Therefore, the distance between the first photosensitive element S1 and the second photosensitive element S2 in the same photosensitive device ST can be reduced, which facilitates the parallel connection between the first photosensitive element S1 and the second photosensitive element S2 and reduces the wiring length.

[0135] In some embodiments of this application, the display panel 100 includes a plurality of photosensitive devices ST. A plurality of first photosensitive elements S1 and a plurality of second photosensitive elements S2 located in the same row are arranged alternately; a plurality of first photosensitive elements S1 and a plurality of second photosensitive elements S2 located in the same column are also arranged alternately. Each first photosensitive element S1 is connected in parallel with an adjacent second photosensitive element S2 located in the same row and on the same side. Alternatively, each first photosensitive element S1 is connected in parallel with an adjacent second photosensitive element S2 located in the same column and on the same side.

[0136] For example, such as Figure 11 As shown, each first photosensitive element S1 is connected in parallel with an adjacent second photosensitive element S2 located in the same row and to the right of the first photosensitive element S1. Of course, each first photosensitive element S1 can also be connected in parallel with an adjacent second photosensitive element S2 located in the same row and to the left of the first photosensitive element S1.

[0137] It is understood that the embodiments of this application arrange multiple photosensitive devices ST in an alternating manner in the display panel 100, and the distribution of the multiple photosensitive devices ST in the display panel 100 is more uniform, which can improve the uniformity of the detection sensitivity of the display panel 100.

[0138] In some embodiments of this application, such as Figure 12 As shown, multiple first photosensitive elements S1 and multiple second photosensitive elements S2 are arranged alternately in the same row, and all photosensitive elements S1 or second photosensitive elements S2 are located in the same column. Each first photosensitive element S1 is connected in parallel with an adjacent second photosensitive element S2 located in the same row and on the same side.

[0139] It is understood that the embodiments of this application make the positional relationship of the first photosensitive element S1 and the second photosensitive element S2 in each photosensitive device ST the same, thereby improving the structural regularity of multiple photosensitive devices S and reducing the manufacturing process difficulty.

[0140] In some embodiments of this application, such as Figure 1 and Figure 13 As shown, the photosensitive device ST also includes a third photosensitive element S3 ( Figure 1 (Not shown in the image).

[0141] The third photosensitive element S3 includes a third electrode, a third protective electrode, and a third photosensitive portion located between the third electrode and the third protective electrode. The third electrode, the first electrode 251, and the second electrode 252 are located on the same layer and connected to each other. The third photosensitive element, the first photosensitive portion 271, and the second photosensitive portion 272 are located on the same layer and spaced apart. The third protective electrode, the first protective electrode 281, and the second protective electrode 282 are located on the same layer. The third protective electrode is connected to either the source electrode 301 or the drain electrode 302.

[0142] The first photosensitive element S1, the second photosensitive element S2, and the third photosensitive element S3 are located in three intersecting regions 40a at the three vertices of the same light-emitting unit 40.

[0143] Specifically, in the same column of light-emitting units 40, for every two adjacent photosensitive devices ST, the two first photosensitive elements S1 are arranged diagonally, the two second photosensitive elements S2 are arranged diagonally, and the two third photosensitive elements S3 are located in the same row, thereby improving the uniformity of the distribution of multiple photosensitive devices ST.

[0144] In this embodiment, the photosensitive device ST includes a first photosensitive element S1, a second photosensitive element S2, and a third photosensitive element S3, further increasing the photosensitive area of ​​the photosensitive device ST. By distributing the first photosensitive element S1, the second photosensitive element S2, and the third photosensitive element S3 within three intersecting regions 40a at the three vertices of the same light-emitting unit 40, the distance between the first photosensitive element S1, the second photosensitive element S2, and the third photosensitive element S3 in the same photosensitive device ST can be reduced, facilitating parallel connection of the first photosensitive element S1, the second photosensitive element S2, and the third photosensitive element S3, and reducing wiring length.

[0145] The display panel provided in the embodiments of this application has been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A display panel, characterized in that, The display panel includes at least one photosensitive element, which comprises: a switching element, a first photosensitive element, and a second photosensitive element; the display panel further includes: substrate; A first conductive layer is disposed on the substrate, and the first conductive layer includes a first electrode and a second electrode connected to each other. A photosensitive layer is disposed on the side of the first conductive layer away from the substrate. The photosensitive layer includes a first photosensitive portion disposed corresponding to the first electrode and a second photosensitive portion disposed corresponding to the second electrode, and the first photosensitive portion and the second photosensitive portion are disposed at intervals. The photosensitive layer includes a metal oxide semiconductor. An insulating layer is disposed between the first conductive layer and the photosensitive layer; A second conductive layer is disposed on the side of the photosensitive layer away from the substrate. The second conductive layer includes a first protective electrode and a second protective electrode. The first protective electrode is electrically connected to the first photosensitive portion, and the second protective electrode is electrically connected to the second photosensitive portion. A third conductive layer is disposed on the side of the second conductive layer away from the substrate. The third conductive layer includes the source and drain of the switching element. Both the first protection electrode and the second protection electrode are electrically connected to the source or drain of the switching element. The first photosensitive element includes a first electrode, a first photosensitive portion, and a first protective electrode; the second photosensitive element includes a second electrode, a second photosensitive portion, and a second protective electrode. The display panel further includes multiple light-emitting units, which are arranged in multiple rows along a first direction and in multiple columns along a second direction; Among them, multiple cross regions are formed between the multiple rows of light-emitting units and the multiple columns of light-emitting units, and each cross region is provided with at most one first photosensitive element or one second photosensitive element; The first photosensitive element and the second photosensitive element are respectively located in two adjacent intersection regions, and the two adjacent intersection regions are located on the same side of the same light-emitting unit.

2. The display panel according to claim 1, characterized in that, The display panel also includes: A first active layer is disposed between the substrate and the first conductive layer. The first active layer includes a first active portion of the switching element, and the source and drain of the switching element are electrically connected to the first active portion, respectively.

3. The display panel according to claim 2, characterized in that, The photosensitive device further includes: a storage capacitor, the storage capacitor including a first capacitor electrode and a second capacitor electrode that are at least partially overlapped; The first capacitor electrode is electrically connected to both the first electrode and the second electrode; The second capacitor electrode is electrically connected to both the first protection electrode and the second protection electrode, and the second capacitor electrode and the first capacitor electrode are at least partially overlapped.

4. The display panel according to claim 3, characterized in that, The display panel further includes a fourth conductive layer, which includes a conductive portion, wherein the orthographic projection of the conductive portion on the substrate partially overlaps with the orthographic projection of the first electrode and / or the second electrode on the substrate.

5. The display panel according to claim 3, characterized in that, The electron mobility of the metal oxide semiconductor in the photosensitive layer is greater than or equal to 10 cm⁻¹. 2 / Vs, the thickness of the insulating layer is 5 nanometers to 15 nanometers.

6. The display panel according to claim 2, characterized in that, The display panel further includes a pixel driving circuit, which includes a first driving transistor and a second driving transistor. The display panel also includes: A second active layer is disposed between the substrate and the photosensitive layer. The second active layer includes a second active portion of the first driving transistor, and the second active portion includes a polysilicon semiconductor. A third active layer is disposed between the second active layer and the photosensitive layer. The third active layer includes a third active portion of the second driving transistor, and the third active portion includes a metal-oxide-semiconductor. A conductive layer is disposed between the second active layer and the third active layer, the conductive layer including the second gate of the first driving transistor, the second gate being disposed at least partially overlapping the second active portion; The second conductive layer further includes a third gate of the second driving transistor, the third gate being disposed at least partially overlapping the third active portion.

7. The display panel according to claim 6, characterized in that, The first active part includes a polysilicon semiconductor; The second active layer further includes the first active portion, and the conductive layer further includes the first gate of the switching element, wherein the first gate is disposed at least partially overlapping the first active portion.

8. The display panel according to claim 6, characterized in that, The first active part includes a metal-oxide-semiconductor; The third active layer further includes the first active portion, the conductive layer further includes the fourth gate of the switching element, the second conductive layer further includes the first gate of the switching element, the fourth gate is at least partially overlapping the first active portion, and the first gate is at least partially overlapping the first active portion.

9. The display panel according to claim 1, characterized in that, The display panel includes a plurality of the aforementioned photosensitive devices; In this arrangement, multiple first photosensitive elements and multiple second photosensitive elements located in the same row are arranged alternately, multiple first photosensitive elements and multiple second photosensitive elements located in the same column are arranged alternately, and each first photosensitive element is connected in parallel with an adjacent second photosensitive element located in the same row and on the same side, or each first photosensitive element is connected in parallel with an adjacent second photosensitive element located in the same column and on the same side. Alternatively, multiple first photosensitive elements and multiple second photosensitive elements located in the same row may be arranged alternately, and all of them located in the same column may be either first photosensitive elements or second photosensitive elements. Each first photosensitive element is connected in parallel with an adjacent second photosensitive element located in the same row and on the same side.

10. The display panel according to claim 1, characterized in that, The photosensitive device also includes a third photosensitive element; The third photosensitive element includes a third electrode, a third protective electrode, and a third photosensitive part located between the third electrode and the third protective electrode; the third electrode and the first electrode are located on the same layer and connected to each other, the third photosensitive part and the first photosensitive part are located on the same layer and spaced apart, and the third protective electrode is connected to the source electrode or the drain electrode; The first photosensitive element, the second photosensitive element, and the third photosensitive element are respectively located in the three intersecting regions at the three vertices of the same light-emitting unit.

Images