Image sensor and electronic device

Abstract

The present technology relates to an image sensor and an electronic device. Among them, the image sensor may include: a sensor chip having a pixel array unit in which pixels performing photoelectric conversion are arranged; a plate-shaped transparent member attached to the pixel array unit side of the sensor chip and having a size larger than that of the sensor chip; and a resin portion provided around the side wall portion of the sensor chip, wherein the resin portion is filled in the horizontal direction between the position of the end face of the plate-shaped transparent member and the position of the end face of the sensor chip.

Description

[0001] Cross - Reference to Related Applications

[0002] This application is a divisional application of Chinese Patent Application No. 201780005223.9, the patent application of No. 201780005223.9 has an application date of January 11, 2017, and the invention title is "Image Sensor, Manufacturing Method, and Electronic Device". Technical Field

[0003] The present technology relates to an image sensor, a manufacturing method, and an electronic device. More specifically, it relates to an image sensor, a manufacturing method, and an electronic device that can, for example, prevent ghosting. Background Art

[0004] For example, in Patent Document 1, it is described that the cross - section of a transparent member for an image sensor is trapezoidal, and a plate - like transparent member such as glass is disposed on a light - receiving surface and light is made to enter the surface via the transparent member.

[0005] As described in Patent Document 1, by making the cross - section of the transparent member disposed on the light - receiving surface trapezoidal, ghosting caused by light reflected by the end face of the transparent member and incident on the light - receiving surface can be prevented.

[0006] Citation List

[0007] Patent Documents

[0008] Patent Document 1: JP 2006 - 041183 A Summary of the Invention

[0009] Problems to be Solved by the Invention

[0010] In a chip - scale package (CSP) or the like that is an encapsulation of an image sensor, due to the development of semiconductor miniaturization technology, various circuit sizes are reduced. Therefore, the distance between the end face of a sensor chip having a pixel array unit in which pixels performing photoelectric conversion are arranged and the pixel array unit is shortened.

[0011] When the distance between the end face of the sensor chip and the pixel array unit is not too short, the reflected light reflected by the end face of the transparent member is incident between the end face of the sensor chip and the pixel array unit (outside the pixel array unit). However, when the distance between the end face of the sensor chip and the pixel array unit is very short, the reflected light reflected by the end face of the transparent member is incident on the pixel array unit (inside), which may cause ghosting.

[0012] The present technology has been completed in view of this situation and can prevent the occurrence of ghosting.

[0013] Solution to the Problem

[0014] The image sensor according to the present technology is an image sensor including: a sensor chip having a pixel array unit in which pixels performing photoelectric conversion are arranged; and a plate-shaped transparent member attached to the pixel array unit side of the sensor chip and having a size larger than that of the sensor chip.

[0015] In the image sensor according to the present technology, a plate-shaped transparent member having a size larger than that of the sensor chip is attached to a sensor chip having a pixel array unit in which pixels performing photoelectric conversion are arranged.

[0016] The manufacturing method according to the present technology is a manufacturing method including the steps of: attaching a plate-shaped transparent member to the pixel array unit side of a sensor chip having a pixel array unit in which pixels performing photoelectric conversion are arranged, wherein an image sensor having the sensor chip attached thereto and the transparent member having a size larger than that of the sensor chip is manufactured.

[0017] In the manufacturing method according to the present technology, a plate-shaped transparent member is attached to the pixel array unit side of a sensor chip having a pixel array unit in which pixels performing photoelectric conversion are arranged, wherein an image sensor having the sensor chip attached thereto and the transparent member having a size larger than that of the sensor chip is manufactured.

[0018] The electronic device according to the present technology is an electronic device including: an optical system that collects light; and an image sensor that receives light and captures an image, wherein the image sensor includes: a sensor chip having a pixel array unit in which pixels performing photoelectric conversion are arranged; and a plate-shaped transparent member attached to the pixel array unit side of the sensor chip and having a size larger than that of the sensor chip.

[0019] In the electronic device according to the present technology, in the image sensor, a plate-shaped transparent member having a size larger than that of the sensor chip is attached to a sensor chip having a pixel array unit in which pixels performing photoelectric conversion are arranged.

[0020] Note that the image sensor may be an independent device or an internal block constituting a device.

[0021] Effects of the Invention

[0022] According to the present technology, ghosting can be prevented.

[0023] Note that the effects described here are not necessarily limited, and any of the effects described in the present disclosure may be applicable. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1It is a block diagram showing a configuration example of a camera unit to which the present technology is applicable.

[0025] Figure 2 It is a schematic perspective view showing a configuration example of the image sensor 2.

[0026] Figure 3 It is a schematic cross-sectional view showing a configuration example of an image sensor having a two-layer stacked structure.

[0027] Figure 4 It is a cross-sectional view showing a configuration example of the sensor chip 40.

[0028] Figure 5 It is a cross-sectional view showing a first configuration example of the image sensor 2.

[0029] Figure 6 It is a diagram showing an example of a method for preventing ghosting in a captured image.

[0030] Figure 7 It is a cross-sectional view showing a second configuration example of the image sensor 2.

[0031] Figure 8 It is a plan view of a second configuration example of the image sensor 2 as seen from above.

[0032] Figure 9 It is a diagram showing an example of incident light incident on a second configuration example of the image sensor 2.

[0033] Figure 10 It is a diagram further showing an example of incident light incident on a second configuration example of the image sensor 2.

[0034] Figure 11 It is a cross-sectional view showing a third configuration example of the image sensor 2.

[0035] Figure 12 It is a cross-sectional view showing a fourth configuration example of the image sensor 2.

[0036] Figure 13 It is a cross-sectional view showing a fifth configuration example of the image sensor 2.

[0037] Figure 14 It is a cross-sectional view showing a sixth configuration example of the image sensor 2.

[0038] Figure 15 It is a cross-sectional view showing a seventh configuration example of the image sensor 2.

[0039] Figure 16 It is a cross-sectional view showing an eighth configuration example of the image sensor 2.

[0040] Figure 17It is a cross-sectional view showing a ninth configuration example of the image sensor 2.

[0041] Figure 18 It is a cross-sectional view showing a tenth configuration example of the image sensor 2.

[0042] Figure 19 It is a diagram showing an example of a manufacturing method of the image sensor 2.

[0043] Figure 20 It is a diagram showing another example of a manufacturing method of the image sensor 2.

[0044] Figure 21 It is a diagram showing a usage example of the image sensor 2. Detailed Description

[0045] <Embodiment of the Camera Unit to Which the Present Technology Is Applied>

[0046] Figure 1 It is a block diagram showing a configuration example of an embodiment of the camera unit to which the present technology is applied.

[0047] Note that the camera unit can capture still images and moving images.

[0048] In Figure 1 the camera unit includes an optical system 1, an image sensor 2, a memory 3, a signal processing unit 4, an output unit 5, and a control unit 6.

[0049] For example, the optical system 1 includes a zoom lens, a focusing lens, an aperture, etc. (all not shown) and causes light from the outside to be incident on the image sensor 2.

[0050] For example, the image sensor 2 is a complementary metal oxide semiconductor (CMOS) image sensor having a back wiring structure, receives incident light from the optical system 1, performs photoelectric conversion, and outputs image data corresponding to the incident light from the optical system 1.

[0051] The memory 3 temporarily stores the image data output by the image sensor 2.

[0052] For example, the signal processing unit 4 performs processing such as noise removal and white balance adjustment using the image data stored in the memory 3 as signal processing, and supplies the image data to the output unit 5.

[0053] The output unit 5 outputs the image data from the signal processing unit 4.

[0054] That is, the output unit 5 has a display (not shown) made of, for example, liquid crystal, etc., and displays an image corresponding to the image data from the signal processing unit 4 as a so-called through image.

[0055] In addition, the output unit 5 has, for example, a drive (not shown) for driving a recording medium such as a semiconductor memory, a magnetic disk, or an optical disk, and records the image data from the signal processing unit 4 on the recording medium.

[0056] In addition, the output unit 5 has a communication interface that performs predetermined communication, and transmits the image data from the signal processing unit 4 wiredly or wirelessly.

[0057] The control unit 6 controls each block constituting the camera unit according to user operations, instructions from the outside, and the like.

[0058] In the camera unit configured as described above, the image sensor 2 receives incident light from the optical system 1 and outputs image data according to the incident light.

[0059] The image data output by the image sensor 2 is supplied to the memory 3 and stored therein. The image data stored in the memory 3 is signal-processed by the signal processing unit 4, and the resulting image data is supplied to the output unit 5 and output.

[0060] <Configuration example of the image sensor 2>

[0061] Figure 2 is a schematic perspective view showing a configuration example of the image sensor 2.

[0062] The image sensor may be configured with a single die (substrate) or may be configured by stacking multiple dice.

[0063] Figure 2 A in shows a configuration example of the image sensor 2 configured with a single die.

[0064] In Figure 2 A of, the image sensor 2 is configured with a sensor die 10 as a single flat die.

[0065] In the sensor die 10, a pixel array unit 11 in which a plurality of pixels (not shown) that perform photoelectric conversion are arranged in a matrix and a peripheral circuit are formed. The peripheral circuit includes a drive circuit for driving the pixels of the pixel array unit 11 and a circuit for performing other necessary signal processing (including control) to capture an image.

[0066] Figure 2 B of shows a configuration example of the image sensor configured with two dice.

[0067] In Figure 2 B of, the image sensor 2 has a two-layer stacked structure in which the sensor die 10 and the logic die 20, which are two flat dice, are stacked.

[0068] A pixel array unit 11 is formed in the sensor die 10, and a peripheral circuit 12 is formed in the logic die 20.

[0069] Figure 2 C shows a configuration example of an image sensor composed of three dies.

[0070] In Figure 2 In C of, the image sensor 2 has a three-layer stacked structure, in which the sensor die 10, the logic die 20, and the memory chip 30, which are three flat dies, are stacked.

[0071] A pixel array unit 11 is formed in the sensor die 10, and a peripheral circuit 12 is formed in the logic die 20. A memory 13 is formed in the memory chip 30.

[0072] In Figure 2 In the case of the image sensor 2 having a stacked structure as shown in B and C of, it is not necessary to include the peripheral circuit in the sensor die 10, so that the size (area) of the sensor die 10 can be reduced, and thus the size of the image sensor 2 can be reduced.

[0073] In addition, in the case of constructing the image sensor 2 having a stacked structure, the lead between the pixel array unit 11 and the peripheral circuit 12 can be shortened, the time constant due to capacitance can be reduced, and high speed can be achieved.

[0074] In addition, in the case of constructing the image sensor 2 having a stacked structure, by providing a memory chip 30 in which a memory 13 is formed as shown in C of Figure 2 , various image processes can be performed within the image sensor 2, and an image with added value and information about the image can be output.

[0075] Hereinafter, for example, the image sensor 2 having a two-layer stacked structure in which the sensor die 10 and the logic die 20 are stacked as in B of Figure 2 will be described as an example.

[0076] Note that, in addition to the image sensor 2 having a two-layer stacked structure, the present technology can also be applied, for example, to Figure 2 the image sensor 2 having no stacked structure as shown in A of Figure 2 , the image sensor 2 having a three-layer stacked structure as shown in C of

[0077] Figure 3 is a schematic cross-sectional view showing a configuration example of an image sensor having a two-layer stacked structure.

[0078] In Figure 3 , in the sensor die 10 and the logic die 20, the sensor die 10 and the logic die 20 are bonded, where the sensor die 10 is placed on the upper side (the side on which the light received by the image sensor is incident), thereby constructing a sensor chip 40 having a stacked structure with two layers.

[0079] In addition, in Figure 3 , an image sensor of a (wafer-level) chip scale package (CSP) is constituted by bonding a protection glass 41 having the same size as the sensor chip 40 on the upper side (sensor die 10 side) of the sensor chip 40 and forming a (backside) electrode 42 on the lower part (logic die 20 side) of the sensor chip 40.

[0080] As described above, in Figure 3 , since the electrode 42 is formed on the lower part of the sensor chip 40, the image sensor can be mounted by flip chip.

[0081] Figure 4 is a cross-sectional view showing a configuration example of the sensor chip 40.

[0082] That is, Figure 4 is a partially enlarged view of the cross-section of the sensor chip 40.

[0083] In the logic die 20, a multilayer wiring layer 122 is formed on the upper side (sensor die 10 side) of a semiconductor substrate 121 containing, for example, silicon (Si) (hereinafter referred to as the silicon substrate 121). Figure 2 A part of the peripheral circuit 12 in

[0084] is constituted by the multilayer wiring layer 122. The multilayer wiring layer 122 is constituted by a plurality of wiring layers 123 and an interlayer insulating film 124 formed between the respective wiring layers 123. The plurality of wiring layers include the uppermost wiring layer closest to the sensor die 10, the intermediate wiring layer, and the lowermost wiring layer closest to the silicon substrate 121.

[0085] The plurality of wiring layers 123 are formed, for example, by using copper (Cu), aluminum (Al), tungsten (W), etc., and the interlayer insulating film 124 is formed, for example, by a silicon oxide film, a silicon nitride film, etc. The plurality of wiring layers 123 and the interlayer insulating film 124 can be made of the same material for all layers, or two or more materials can be used according to these layers.

[0086] The plurality of wiring layers 123 are electrically connected to the electrode 42 ( Figure 3 ) via the silicon substrate 121.

[0087] In the sensor die 10, a multilayer wiring layer 102 is formed on the lower side (logic die 20 side) of a semiconductor substrate 101 containing silicon (Si) (hereinafter referred to as the silicon substrate 101). The multilayer wiring layer 102 constitutes other parts of peripheral circuits 12 such as a readout circuit (not shown) that reads out signals from pixels and the like.

[0088] The multilayer wiring layer 102 is composed of a plurality of wiring layers 103 and interlayer insulating films 104 formed between the respective wiring layers 103. The plurality of wiring layers include the uppermost wiring layer closest to the silicon substrate 101, intermediate wiring layers, and the lowermost wiring layer closest to the logic die 20.

[0089] As materials for the plurality of wiring layers 103 and the interlayer insulating films 104, the same materials as those for the wiring layer 123 and the interlayer insulating film 124 described above can be used. In addition, the plurality of wiring layers 103 and the interlayer insulating films 104 are similar to the wiring layer 123 and the interlayer insulating film 124 in that the wiring layers 103 and the interlayer insulating films 104 can be made by respectively containing one material or two or more materials.

[0090] Please note that in Figure 4 the example of, the multilayer wiring layer 102 of the sensor die 10 is configured with three wiring layers 103, and the multilayer wiring layer 122 of the logic die 20 is configured with four wiring layers 123, but the total number of wiring layers is not limited to this, and the wiring layers can be formed of any number of layers.

[0091] In the silicon substrate 101, a photodiode (PD) 110 serving as a pixel is formed by a PN junction.

[0092] An insulating film (planarization film) 108 is formed on the upper surface of the silicon substrate 101, and a chip lens (OCL) 111 and a color filter (CF) 112 are formed on a portion of the upper part of the insulating film 108 corresponding to the PD 51.

[0093] At a predetermined position of a portion of the silicon substrate 101 where the OCL 111 and the CF 112 are not formed in the insulating film 108, a silicon through electrode 109 connected to the wiring layer 102 of the sensor die 10 and a chip through electrode 105 connected to the wiring layer 122 of the logic die 20 are formed.

[0094] The chip through electrode 105 and the silicon through electrode 109 are connected by a connection wiring 106 formed on the upper surface side of the silicon substrate 101. In addition, an insulating film 107 is formed between each of the silicon through electrode 109 and the chip through electrode and the silicon substrate 101.

[0095] The sensor chip 40 has a stacked structure in which the side of the multilayer wiring layer 122 of the logic die 20 and the side of the multilayer wiring layer 102 of the sensor die 10 are bonded. In Figure 4 the bonding surfaces of the multilayer wiring layer 122 of the logic die 20 and the multilayer wiring layer 102 of the sensor die 10 are indicated by dashed lines.

[0096] <First Configuration Example of Image Sensor 2>

[0097] Figure 5 is a cross-sectional view showing a first configuration example of the image sensor 2.

[0098] Note that the parts corresponding to Figure 3 in the figure are denoted by the same reference numerals, and their descriptions are appropriately omitted hereinafter.

[0099] In Figure 5 the image sensor 2 has a sensor chip 40, a protective glass 41, and an electrode 42, and the sensor chip has a stacked structure of two layers of a sensor die 10 and a logic die 20.

[0100] Therefore, Figure 5 the image sensor 2 in Figure 3 is configured to be similar to the image sensor in

[0101] Note that the protective glass 41 is bonded to the sensor die 10 of the sensor chip 40 by using a transparent adhesive 43. Although Figure 5 the adhesive 43 is shown, the illustration of the adhesive 43 is omitted in Figure 3 Here, the distance between the end face of the sensor chip 40 and the pixel array unit 11 is denoted by A, and the thickness of the protective glass 41 (and the adhesive 43) is denoted by B.

[0102] In addition, in the case where light having an angle (i.e., incident light incident on the protective glass 41 from a direction inclined from the normal direction of the plane of the pixel array unit 11) is reflected by the end face of the protective glass 41 and incident on the sensor chip 40, the distance between the position where the incident light is incident on the sensor chip 40 and the end face of the sensor chip 40 is denoted by C.

[0103] In the case where the distance A is sufficiently longer than the thickness B of the protective glass 41, the relationship between the distances A and C is A > C. Therefore, the incident light reflected by the end face of the protective glass 41 does not enter the pixel array unit 11 (inside), and no ghosting occurs in the image obtained by the image sensor 2.

[0104] Incidentally, due to the development of the semiconductor miniaturization process, the distance A is short.

[0105] Incidentally, due to the development of the semiconductor miniaturization process, the distance A is short.

[0106] As Figure 2 shown, in the case where the image sensor 2 is configured by forming the peripheral circuit 12 in a logic die 20 different from the sensor die 10 in which the pixel array unit 11 is formed and stacking the sensor die 10 and the logic die 20, the distance A is shorter.

[0107] As described above, when the distance A is short and the relationship between the distances A and C is A < C, the incident light reflected by the end face of the protective glass 41 is incident on the pixel array unit 11, and ghosting occurs in the image (hereinafter referred to as the captured image) obtained by the image sensor 2.

[0108] Figure 6 FIG. is a diagram showing an example of a method for preventing ghosting from occurring in a captured image.

[0109] That is, Figure 6 shows Figure 5 a cross section of the image sensor 2 in a state where the protective glass 41 is thinned.

[0110] As Figure 5 shown, when the distance A is sufficiently longer than the thickness B of the protective glass 41, the relationship between the distances A and C is A > C, so that ghosting does not occur.

[0111] Then, as Figure 6 shown, there is a method for preventing ghosting as follows: by reducing (thinning) the thickness B of the protective glass 41 according to the distance A, which is short due to miniaturization, to maintain the relationship between the distances A and C as A > C.

[0112] That is, by reducing the thickness B of the protective glass 41, even if the distance A is shortened, the relationship between the distances A and C will not become A < C, so that ghosting can be prevented.

[0113] However, when the thickness B of the protective glass 41 is reduced, the mechanical stiffness of the CSP image sensor 2 is reduced, and warping as shown by the arrow W in Figure 6 is likely to occur in the image sensor 2.

[0114] When warping occurs in the image sensor 2, the distances between the lens (not shown) that collects the light incident on the image sensor 2 and the pixels in the central part and the peripheral part of the pixel array unit 11 are different according to the degree of warping, and in some cases, the focusing may vary over the entire pixel array unit 11 (pixels).

[0115] Now, the F value of the lens, the size (lateral and longitudinal lengths) of one pixel of the pixel array unit 11, and the depth of focus of the lens are represented by F, a, and b, respectively. Further, when the diameter of the circle of confusion is set to be (less than) the size of two pixels, the depth of focus b of the lens is expressed by the expression b = F × 2 × a.

[0116] For example, in the case of F = 2.0 and a = 1.2 μm, the depth of focus b of the lens is 2 × 2 × 1.2 = 4.8 μm. When the position of the pixel in the optical axis direction is shifted by more than 4.8 μm due to the warping of the image sensor 2, the focus changes and blurring occurs in the captured image.

[0117] Then, hereinafter, the image sensor 2 that prevents ghosting in the captured image will be described. The image sensor can prevent the image sensor 2 from warping due to a reduction in mechanical stiffness and prevent blurring in the captured image.

[0118] <Second Configuration Example of Image Sensor 2>

[0119] Figure 7 FIG. is a cross-sectional view showing a second configuration example of the image sensor 2.

[0120] Note that the parts corresponding to Figure 5 in the figure are denoted by the same reference numerals, and their descriptions will be appropriately omitted hereinafter.

[0121] In Figure 7 , the image sensor 2 includes a sensor chip 40, electrodes 42, and a protective glass 201. The sensor chip has a stacked structure of two layers, a sensor die 10 and a logic die 20. Further, in Figure 7 of the image sensor 2, the protective glass 201 is bonded to the sensor chip 40 (sensor die 10 thereof) by an adhesive 43.

[0122] Therefore, Figure 7 of the image sensor 2 has the commonality with Figure 5 in that the image sensor 2 includes a sensor chip 40 and electrodes 42.

[0123] However, Figure 7 of the image sensor 2 is different from Figure 5 in that a protective glass 201 is provided instead of the protective glass 41.

[0124] The protective glass 201 is a plate-shaped transparent member having a size (the area of the surface on which light enters the image sensor 2) larger than that of the sensor chip 40, and is bonded to the sensor chip 40 by an adhesive 43.

[0125] Note that the large-sized protective glass 201 can be directly attached to the sensor chip 40 or can be indirectly attached to the sensor chip 40. That is, the protective glass 201 can be attached to the protective glass 41 of the image sensor 2 by using a thin protective glass 41 as shown in Figure 6 .

[0126] As described above, it is not necessary to directly attach the protective glass 201 to the sensor chip 40, and some transparent components can be present between the protective glass 201 and the sensor chip 40. The configuration example of the image sensor 2 described below is similar in this regard.

[0127] In addition, in the following description, for the sake of easy explanation, the left and right and the top and bottom of the image sensor 2 are symmetrical.

[0128] Figure 8 is a plan view of a second configuration example of the image sensor 2 seen from above. Figure 7

[0129] In Figure 8 , the size of the protective glass 201 is larger than that of the sensor chip 40.

[0130] That is, the horizontal length H1 and the vertical length V1 of the protective glass 201 are longer than the horizontal length H2 and the vertical length V2 of the sensor chip 40, respectively.

[0131] Therefore, the end face of the protective glass 201 is located outside the end face of the sensor chip 40 and the end of the pixel array unit 11.

[0132] Note that in Figure 8 (and Figure 7 ), the distance A between the end face of the sensor chip 40 and the pixel array unit 11 is very short.

[0133] Figure 9 is a diagram showing an example of incident light of a second configuration example of the image sensor 2 incident on Figure 7 and Figure 8 .

[0134] In Figure 9 , the incident lights IL0, IL1, and IL2 are all lights with angles and are lights that do not enter the pixel array unit 11 as long as the light travels straight.

[0135] In Figure 9 , the incident light IL0 enters the protective glass 201 and is reflected by the end face E11 of the protective glass 201.

[0136] ​The incident light IL0 reflected by the end face of the protective glass 201 faces the inside of the image sensor 2. However, since the end face E11 of the protective glass 201 is located outside the end face E12 of the sensor chip 40, the incident light IL0 reaches a position protruding from the sensor chip 40 on the lower surface of the protective glass 201.

[0137] That is, since the size of the protective glass 201 is larger than that of the sensor chip 40, the incident light IL0 reflected by the end face E11 of the protective glass 201 and facing the inside of the image sensor 2 does not reach the sensor chip 40 and the pixel array unit 11.

[0138] Therefore, the occurrence of ghosting in the captured image caused by the incident light reflected by the end face E11 of the protective glass 201 and incident on the pixel array unit 11 can be prevented.

[0139] For the size of the protective glass 201 being larger than the size of the sensor chip 40, for example, any size can be adopted as long as the incident light with the maximum angle among the incident lights incident on the protective glass 201 does not incident on the pixel array unit 11 even when the incident light is reflected by the end face E11 of the protective glass 201.

[0140] Here, the above-mentioned "incident light with the maximum angle" means the incident light with the maximum inclination from the normal direction of the plane of the pixel array unit 11.

[0141] In Figure 9 the incident light IL1 is incident on the protective glass 201, passes through the lower surface of the protective glass 201, and is reflected by the end face E13 of the adhesive 43 towards the inside of the image sensor 2.

[0142] Since the thickness of the adhesive 43 is extremely thin, even if the distance A between the end face E12 of the sensor chip 40 and the pixel array unit 11 is short, the incident light IL1 reflected by the end face E13 of the adhesive 43 does not reach the pixel array unit 11 and reaches between the end face E12 of the sensor chip 40 and the pixel array unit 11.

[0143] Therefore, ghosting caused by the incident light IL1 reflected by the end face E13 of the adhesive 43 does not occur.

[0144] In Figure 9 the incident light IL2 is incident on the protective glass 201 and is reflected by the lower surface of the protective glass 201 towards the outside of the image sensor 2 (the end face E11 of the protective glass 201).

[0145] The incident light IL2 reflected by the lower surface of the protective glass 201 may then be reflected by the end face E11 of the protective glass 201, but will not reach the pixel array unit 11 unless the incident light IL2 is light with high intensity (light from a high-brightness light source).

[0146] In this case, no ghosting occurs due to the incident light IL1 reflected by the lower surface of the protective glass 201.

[0147] Note that for the thickness B of the protective glass 201 (which may include the adhesive 43), a thickness that satisfies the mechanical stiffness required for the image sensor 2 is adopted. As the thickness B of the protective glass 201, for example, 200 μm or more can be adopted.

[0148] Figure 10 FIG. is an example of the incident light further showing a second configuration example of the image sensor 2.

[0149] As Figure 9 described, the incident light IL2 reflected by the lower surface of the protective glass 201 may then be reflected by the end face E11 of the protective glass 201, but will not reach the pixel array unit 11 unless the incident light IL2 is light with high intensity.

[0150] However, in the case where the incident light IL2 is high-intensity light, after being reflected by the lower surface of the protective glass 201, the incident light IL2 is further reflected by the end face E11 of the protective glass 201 and the like and may reach the pixel array unit 11.

[0151] In Figure 10 the incident light IL2 reflected by the lower surface of the protective glass 201 is then reflected by the end face E11 of the protective glass 201 and the upper surface of the protective glass 201 and reaches the pixel array unit 11. In this case, ghosting occurs in the captured image.

[0152] <Third Configuration Example of Image Sensor 2>

[0153] Figure 11 FIG. is a cross-sectional view showing a third configuration example of the image sensor 2.

[0154] That is, as Figure 10 described,[[]] Figure 11 FIG. shows the image sensor 2, which prevents the occurrence of ghosting caused by the incident light incident on the pixel array unit 11 via multiple reflections inside the protective glass 201.

[0155] Note that the parts corresponding to Figure 7 in the figure are denoted by the same reference numerals, and their descriptions are appropriately omitted hereinafter.

[0156] InFigure 11 In this case, the image sensor 2 has a sensor chip 40, electrodes 42, and a protective glass 211. The sensor chip has a stacked structure of two layers including a sensor die 10 and a logic die 20. In addition, in Figure 11 the image sensor 2, the protective glass 211 is attached to the sensor chip 40 by an adhesive 43.

[0157] Therefore, Figure 11 the image sensor 2 in Figure 7 is common with the case in

[0158] However, Figure 11 the image sensor 2 in Figure 7 is different from the case in

[0159] in that a protective glass 211 is provided to replace the protective glass 201.

[0160] The protective glass 211 and the protective glass 201 are the same in that the protective glass 211 is a plate-shaped transparent member having a size larger than that of the sensor chip 40.

[0161] However, the protective glass 201 and the protective glass 211 are different in that the cross-sectional shape of the protective glass 201 is rectangular, while the cross-sectional shape of the protective glass 211 is trapezoidal. Figure 11 In

[0162] In addition, in Figure 11 the protective glass 211 has an isosceles trapezoidal cross-sectional shape, in which the inner angles at both ends of the base (upper base and lower base) are equal.

[0163] Note that the trapezoidal cross-sectional shape of the protective glass 211 may not be an isosceles trapezoid, or may be a trapezoid in which the upper base is longer than the lower base.

[0164] Since the cross-sectional shape of the protective glass 211 is trapezoidal, the end face E2 is tapered. Therefore, the incident light IL2 reflected by the lower surface of the protective glass 211 toward the outside of the image sensor 2 may be reflected by the end face E2 of the protective glass 211. However, the incident light IL2 is reflected by the tapered end face E2 toward the outside of the image sensor 2.

[0165] Therefore, it is possible to suppress the occurrence of ghosting caused by the incident light (secondary light, tertiary light, etc.) that has undergone multiple reflections inside the protective glass 211 and is incident on the pixel array unit 11.

[0166] Note that as long as the incident light reflected by the lower surface of the protective glass 211 toward the outside of the image sensor 2 is reflected toward the outside of the image sensor 2, any cross-sectional shape other than a trapezoid can be adopted for the cross-sectional shape of the protective glass 211. That is, for the cross-sectional shape of the protective glass 211, in addition to a trapezoid, for example, a tapered shape of the end face E2 of the protective glass 211 such as a parallelogram can also be adopted.

[0167] <Fourth Configuration Example of Image Sensor 2>

[0168] Figure 12 It is a cross-sectional view showing a fourth configuration example of the image sensor 2.

[0169] Note that the parts corresponding to Figure 11 in the figure are denoted by the same reference numerals, and their descriptions are appropriately omitted hereinafter.

[0170] In Figure 12 , the image sensor 2 includes a sensor chip 40, an electrode 42, and a protective glass 211, and the sensor chip has a stacked structure of two layers of a sensor die 10 and a logic die 20. In addition, in Figure 12 of the image sensor 2, the protective glass 211 is attached to the sensor chip 40 by an adhesive 43.

[0171] Therefore, Figure 12 of the image sensor 2 is the same as the case in Figure 11 in that the image sensor 2 includes a sensor chip 40, an electrode 42, and a protective glass 211.

[0172] However, Figure 12 of the image sensor 2 is different from the case in Figure 11 in that an infrared cut-off filter (IRCF) film 221 is attached to the upper surface and the lower surface of the protective glass 211.

[0173] Here, in each configuration example of the image sensor 2 described below, as the protective glass attached to the sensor chip 40, a protective glass having a rectangular cross-sectional shape such as the protective glass 201 or a protective glass having a trapezoidal cross-sectional shape such as the protective glass 211 is appropriately shown. However, in each configuration example, either a rectangular protective glass or a protective glass with a trapezoidal cross-sectional shape is preferably adopted as much as possible.

[0174] In Figure 12 of the image sensor 2, the IRCF film 221 is, for example, a reflective IRCF, and can be attached to the upper surface and the lower surface of the protective glass 211 by depositing dozens of layers.

[0175] Figure 12The image sensor 2 is an image sensor integrated with an IRCF, and a thin camera unit (module) can be formed by adding the optical system 1 to such an image sensor 2.

[0176] That is, as a method for preventing infrared rays from entering the image sensor 2, for example, there is a method of disposing an IRCF between the upper side of the image sensor 2 (i.e., the optical system 1 ( Figure 1 )) and the image sensor 2 without the IRCF film 221.

[0177] In the case of disposing the IRCF between the optical system 1 and the image sensor 2 as described above, a gap is generated between the optical system 1 and the IRCF and between the IRCF and the image sensor 2, and the thickness of the camera unit increases accordingly. In addition, according to the gap between the IRCF and the image sensor 2, a lens having a long back focal length is required as the lens constituting the optical system 1, which hinders thinning.

[0178] On the other hand, as Figure 12 shown, in the image sensor 2 in which the IRCF film 221 is attached to the protective glass 211, there is no gap between the IRCF and the image sensor 2, so that the thickness of the camera unit can be reduced accordingly.

[0179] Note that the IRCF film 221 can be attached to either one of the upper surface and the lower surface of the protective glass 211 in addition to being attached to both surfaces.

[0180] Here, the protective glass 211 to which the IRCF film 221 is attached can be manufactured, for example, by depositing dozens of layers of the IRCF film 221. However, when such deposition is performed, defective products having pinhole defects and the like are likely to occur.

[0181] Therefore, in the case of manufacturing the image sensor 2 by bonding the sensor chip 40 and the protective glass 211 to which the IRCF film 221 is attached at the wafer level, the yield of the entire image sensor 2 may deteriorate due to the pinhole defects likely to occur when the IRCF film 221 is formed by deposition.

[0182] Thus, the sensor chip 40 and the protective glass 211 to which the IRCF film 221 is attached are not bonded at the wafer level. The sensor chip 40 and the protective glass 211 to which the IRCF film 221 is attached are singulated at the wafer level, and only good chips selected from the singulated sensor chip 40 and protective glass 211 can be bonded.

[0183] By bonding the sensor chip 40 and the protective glass 211 to which the IRCF film 221 is attached only after selecting good chips as described above, deterioration of the yield can be prevented and the manufacturing cost can be suppressed.

[0184] Note that, in addition to the protective glass 211 having a trapezoidal cross-sectional shape, the IRCF film 221 can also be applied to, for example, a protective glass 201 having a rectangular cross-sectional shape ( Figure 7 ).

[0185] <Fifth Configuration Example of Image Sensor 2>

[0186] Figure 13 is a cross-sectional view showing a fifth configuration example of the image sensor 2.

[0187] Note that, in the figure, the parts corresponding to Figure 11 are denoted by the same reference numerals, and their descriptions are appropriately omitted hereinafter.

[0188] In Figure 13 , the image sensor 2 includes a sensor chip 40, electrodes 42, and a protective glass 231, and the sensor chip has a stacked structure of two layers of a sensor die 10 and a logic die 20. Further, in Figure 13 of the image sensor 2, the protective glass 231 is bonded to the sensor chip 40 by an adhesive 43.

[0189] Therefore, Figure 13 of the image sensor 2 has in common with Figure 11 that the image sensor 2 includes a sensor chip 40 and electrodes 42.

[0190] However, Figure 13 of the image sensor 2 is different from Figure 11 in that a protective glass 231 is provided in place of the protective glass 211.

[0191] The protective glass 231 is the same as the protective glass 211 in that the protective glass 231 is a plate-shaped transparent member having a size larger than the sensor chip 40 and has a trapezoidal cross-sectional shape.

[0192] However, the protective glass 231 is different from the protective glass 211 that can employ any transparent member in that the protective glass 231 is made of, for example, a transparent member that absorbs infrared rays, for example, blue plate glass.

[0193] Since the protective glass 231 absorbs infrared rays, the protective glass 231 serves as an IRCF. Therefore, similar to Figure 12 in the case of Figure 13 too, the image sensor 2 of Figure 12 is an image sensor integrated with an IRCF, and similar to

[0194] Here, similar toFigure 12 Similar to the protective glass 211 with the IRCF film 221 attached thereto, defective products are likely to be produced in the manufacturing process of the infrared-absorbing protective glass 231.

[0195] Therefore, similar to the case in Figure 12 , the sensor chip 40 and the protective glass 231 are not wafer-level bonded. The sensor chip 40 and the protective glass 231 are wafer-level singulated, and only the good chips selected from the singulated sensor chip 40 and protective glass 231 are bonded. Therefore, the yield deterioration can be prevented and the manufacturing cost can be suppressed.

[0196] In addition, the thermal expansion coefficient (CTE) between the transparent member (material) that constitutes the protective glass 231 as the IRCF and absorbs infrared rays and the silicon (Si) that constitutes the sensor chip 40 is quite different.

[0197] Therefore, in the case of wafer-level bonding the sensor chip 40 and the protective glass 231, when forming the back wiring later to connect the sensor chip 40 to the electrode 42 and the sensor chip 40 and the protective glass 231 become very hot during chemical vapor deposition (CVD) for forming the insulating film, for example, large warpage may occur throughout the wafer and the manufacturing of the image sensor 2 may become difficult.

[0198] By bonding the sensor chip 40 and the protective glass 231 after singulating them, the difficulties in manufacturing the image sensor 2 as described above can be prevented.

[0199] Note that in addition to the protective glass having a trapezoidal cross-sectional shape, such as the protective glass 231, the infrared-absorbing transparent member can also be applied to, for example, a protective glass having a rectangular cross-sectional shape, such as the protective glass 201 ( Figure 7 ).

[0200] <Sixth Configuration Example of Image Sensor 2>

[0201] Figure 14 is a cross-sectional view showing a sixth configuration example of the image sensor 2.

[0202] Note that the parts corresponding to Figure 13 in the figure are denoted by the same reference numerals, and their descriptions are appropriately omitted hereinafter.

[0203] In Figure 14 , the image sensor 2 includes a sensor chip 40, an electrode 42, and a protective glass 231, and the sensor chip has a stacked structure of two layers of a sensor die 10 and a logic die 20. In addition, in Figure 14In the image sensor 2, the protective glass 231 is attached to the sensor chip 40 by an adhesive 43.

[0204] Therefore, Figure 14 The image sensor 2 is Figure 13 The same as the case in that the image sensor 2 has a sensor chip 40, electrodes 42, and a protective glass 231.

[0205] However, Figure 14 The image sensor 2 is Figure 13 Different from the case in that a light-shielding film 241 is formed at the peripheral portions of the upper and lower surfaces of the protective glass 231.

[0206] The light-shielding film 241 is formed at the peripheral portions of the upper and lower surfaces of the protective glass 231 so as not to block the light directly incident on the pixel array unit 11, that is, the light that is not reflected inside the protective glass 231 but passes through the protective glass 231 and is incident on the pixel array unit 11.

[0207] In the case where the light-shielding film 241 is formed at the peripheral portions of the upper and lower surfaces of the protective glass 231 as described above, as Figure 11 Illustrated in, the incident light of the light (secondary light, tertiary light, etc.) caused by multiple reflections inside the protective glass 231 is blocked by the light-shielding film 241. As a result, the occurrence of ghosting can be further prevented.

[0208] Note that the light-shielding film 241 may be formed only on one of the upper and lower surfaces of the protective glass 231 in addition to being formed on the upper and lower surfaces.

[0209] In addition, in addition to the protective glass having a trapezoidal cross-sectional shape, such as the protective glass 231, the light-shielding film 241 can also be applied to, for example, a protective glass having a rectangular cross-sectional shape, such as the protective glass 201 ( Figure 7 ).

[0210] In addition, the light-shielding film 241 can be applied to the protective glass 211 to which the IRCF film 221 ( Figure 12 ) is attached.

[0211] <The seventh configuration example of the image sensor 2>

[0212] Figure 15 Is a cross-sectional view showing the seventh configuration example of the image sensor 2.

[0213] Note that the parts corresponding to Figure 11 In the figure are denoted by the same reference numerals, and their descriptions are appropriately omitted hereinafter.

[0214] In Figure 15In [description], the image sensor 2 has a sensor chip 40, a protective glass 211, and leads 252. The sensor chip has a stacked structure of two layers, a sensor die 10 and a logic die 20. In addition, in Figure 15 the image sensor 2, the protective glass 211 is bonded to the sensor chip 40 by an adhesive 43.

[0215] Therefore, Figure 15 the image sensor 2 in [description] is the same as Figure 11 that in [description] in that the image sensor 2 has a sensor chip 40 and a protective glass 211.

[0216] However, Figure 15 the image sensor 2 in [description] is different from Figure 11 that in [description] in that leads 252 are provided instead of electrodes 42.

[0217] In Figure 11 the image sensor 2, electrodes 42 are formed under the sensor chip 40, and the image sensor 2 can be mounted by flip chip.

[0218] On the other hand, in Figure 15 the image sensor 2, electrodes 42 are not formed, and the image sensor 2 is mounted by wire bonding.

[0219] That is, the sensor chip 40 and a substrate 251 constituting the package of the image sensor 2 are electrically connected by leads 252 including aluminum, copper, etc.

[0220] Similar to the image sensor 2 in Figure 11 which is mounted by flip chip, it is also possible to prevent ghosting from occurring in the image sensor 2 mounted by wire bonding.

[0221] Note that instead of the protective glass 211, for example, Figure 7 the protective glass 201 in [description], Figure 12 the protective glass 211 with an IRCF film 221 attached in [description], Figure 13 the protective glass 231 in [description], Figure 14 the protective glass 231 with a light-shielding film 241 formed thereon in [description], or any other combination of the protective glasses in the above-described configuration examples of the image sensor 2 can be used in Figure 15 the image sensor 2 mounted by wire bonding in [description].

[0222] In addition, in Figure 15 the image sensor 2 mounted by wire bonding in [description], as Figure 15 shown, the leads 252 connected to the sensor chip 40 are pulled out from the sensor chip 40 to a position slightly higher than the upper surface of the sensor chip 40 and are connected to the substrate 251.

[0223] Since in the image sensor 2 mounted by wire bonding, the wire 252 is pulled out from the sensor chip 40 to a position slightly above the upper surface of the sensor chip 40 as described above, the wire 252 slightly protrudes from the upper surface of the sensor chip 40.

[0224] The image sensor 2 mounted by wire bonding requires a gap on the upper side of the sensor chip 40 (i.e., between the sensor chip 40 and the protective glass 211) so as not to prevent the wire 252 from protruding from the upper surface of the sensor chip 40.

[0225] Thus, in the image sensor 2 mounted by wire bonding, the thickness of the adhesive 43 that bonds the sensor chip 40 and the protective glass 211 is adjusted so as to ensure the protrusion of the wire 252.

[0226] Alternatively, a step is provided on the lower surface of the protective glass 211 so as to ensure the protrusion of the wire 252.

[0227] By adjusting the thickness of the adhesive 43 as described above or by providing a step at the protective glass 211, the protrusion of the wire 252 can be ensured and the protective glass 211 having a size larger than the sensor chip 40 can be bonded to the sensor chip 40. Therefore, ghosting can be prevented from occurring in the image sensor 2 mounted by wire bonding.

[0228] Note that in the case where the thickness of the adhesive 43 that bonds the sensor chip 40 and the protective glass 211 is adjusted, in the image sensor 2 mounted by wire bonding, the adhesive 43 is filled around the wire 252 so as to ensure the protrusion of the wire 252.

[0229] In this case, the incident light that has passed through the protective glass 211 does not directly hit the wire 252. That is, since the light that hits the wire 252 needs to penetrate the adhesive 43 that fills around the wire 252, the light is not the incident light itself that has passed through the protective glass 211, but the light that has passed through at least the adhesive 43.

[0230] Since the incident light that has passed through the protective glass 211 in the image sensor 2 mounted by wire bonding does not directly hit the wire 252 as described above, the occurrence of ghosting caused by the light reflected by the wire 252 can be suppressed as compared with the case where the incident light that has passed through the protective glass 211 directly hits the wire 252.

[0231] In addition, in Figure 15 Since the wire 252 is pulled out from the peripheral portion of the sensor chip 40, by forming a light-shielding film 241 at the peripheral portion of the protective glass 211 as shown in Figure 14 to block the light from entering the wire 252, the occurrence of ghosting caused by the light reflected by the wire 252 can be prevented.

[0232] <Eighth Configuration Example of Image Sensor 2>

[0233] Figure 16 It is a cross-sectional view showing the eighth configuration example of the image sensor 2.

[0234] Note that the parts corresponding to in the figure are denoted by Figure 7 the same reference numerals, and their descriptions are appropriately omitted hereinafter.

[0235] In Figure 16 , the image sensor 2 has a sensor chip 40, an electrode 42, and a protective glass 201, and the sensor chip has a stacked structure of two layers of a sensor die 10 and a logic die 20. Further, in Figure 16 the image sensor 2, the protective glass 201 is bonded to the sensor chip 40 by an adhesive 43.

[0236] Therefore, Figure 16 the image sensor 2 in Figure 11 has in common with the case in

[0237] However, in Figure 16 the image sensor 2, the periphery of the sensor chip 40 is filled with a resin 261 that seals the periphery of the sensor chip 40, which is different from the case in Figure 7 where the resin 261 is not used for filling.

[0238] In Figure 16 , the resin 261 is a light-shielding resin having light-shielding properties, and is used to fill between the position of the end face E11 of the protective glass 201 and the position of the end face E12 of the sensor chip 40 in the horizontal direction. Further, the resin 261 is used to fill between the position of the lower surface of the protective glass 201 and the position of the lower surface of the sensor chip 40 in the vertical direction.

[0239] By filling the resin 261, it is possible to protect the portion where the size of the protective glass 201 is larger than that of the sensor chip 40 and that protrudes from the sensor chip 40 when viewed from above, and it is possible to easily handle the image sensor 2.

[0240] That is, for example, breakage of the end portion of the protective glass 201 (for example, breakage at the corner) is suppressed, and it is possible to contribute to the handling of the image sensor 2 when the optical system 1 is mounted on the image sensor 2.

[0241] <Ninth Configuration Example of Image Sensor 2>

[0242] Figure 17 It is a cross-sectional view showing the ninth configuration example of the image sensor 2.

[0243] Note that the parts in the figure corresponding to Figure 11 or Figure 16 are denoted by the same reference numerals, and their descriptions are appropriately omitted hereinafter.

[0244] In Figure 17 , the image sensor 2 has a sensor chip 40, electrodes 42, and a protective glass 211, and the sensor chip has a stacked structure of two layers of a sensor die 10 and a logic die 20. Further, in the Figure 17 image sensor 2, the protective glass 211 is bonded to the sensor chip 40 by an adhesive 43.

[0245] Therefore, Figure 17 the image sensor 2 in Figure 11 has in common with the case in

[0246] that the image sensor 2 has a sensor chip 40, electrodes 42, and a protective glass 211. Figure 17 However, in the Figure 16 image sensor 2 in Figure 11 , as described in

[0247] with Figure 16 the case in Figure 17 , the resin 261 is filled around the sensor chip 40, which is different from the case in

[0248] where the resin 261 is not used for filling.

[0249] Figure 18 is a cross-sectional view showing a tenth configuration example of the image sensor 2.

[0250] Note that the parts in the figure corresponding to Figure 15 or Figure 16 are denoted by the same reference numerals, and their descriptions are appropriately omitted hereinafter.

[0251] In Figure 18 , the image sensor 2 has a sensor chip 40, a protective glass 211, and leads 252, and the sensor chip has a stacked structure of two layers of a sensor die 10 and a logic die 20. Further, in the Figure 18 image sensor 2, the protective glass 211 is bonded to the sensor chip 40 by an adhesive 43, and the leads 252 are electrically connected to the sensor chip 40 and the substrate 251.

[0252] Therefore, Figure 18 the image sensor 2 of Figure 15 is the same as that in

[0253] in that the image sensor 2 has a sensor chip 40, a protective glass 211, and leads 252. Figure 18 However, in the image sensor 2 of Figure 16 as described in Figure 15 the periphery of the sensor chip 40 is filled with resin 261, which is different from the case in

[0254] where the resin 261 is not used for filling. Figure 16 Similar to the case in Figure 18 by also filling the resin 261 in the image sensor 2 of

[0255] it is possible to protect the portion where the size of the protective glass 211 is larger than the sensor chip 40 and protrudes from the sensor chip 40, and it is possible to easily handle the image sensor 2. Figures 16 - 18 Note that the image sensor 2 of Figure 7 , Figure 11 and Figure 15 is the image sensor 2 in which the resin 261 is filled, and the filling of the resin 261 can be applied to others, for example, Figures 12 - 14 the image sensor 2 and the like.

[0256] <Method of manufacturing an image sensor 2>

[0257] Figure 19 is a diagram showing an example of a method of manufacturing the image sensor 2.

[0258] That is, Figure 19 shows Figure 7 an example of a method of manufacturing the image sensor 2 of

[0259] In step S11, a manufacturing apparatus (not shown) for manufacturing the image sensor 2 manufactures a sensor die 10 and a logic die 20 (each being a wafer).

[0260] In step S12, the manufacturing apparatus bonds the sensor die 10 and the logic die 20 and manufactures a sensor chip 40.

[0261] In step S13, by forming a chip through electrode 105, a connection wiring 106, an insulating film 107, etc. in the sensor chip 40 ( Figure 4 ), the manufacturing apparatus electrically connects the sensor die 10 and the logic die 20. In addition, the manufacturing apparatus forms an OCL 111 and a CF 112 on the sensor die 10.

[0262] In step S14, the manufacturing apparatus attaches, for example, glass 281, which serves as a support substrate for supporting the sensor chip 40, to the upper side (sensor die 10 side) of the sensor chip 40 (or performs temporary bonding). Here, for example, in addition to glass 281, an Si substrate or the like can be used as the support substrate.

[0263] In step S15, the manufacturing apparatus forms a back wiring (not shown) connected to the electrode 42 on the sensor chip 40 supported by the glass 281 serving as the support substrate and forms the electrode 42.

[0264] In step S16, the manufacturing apparatus thins the glass 281 serving as the support substrate by polishing, etching, or the like. Alternatively, the manufacturing apparatus peels the glass 281 serving as the support substrate from the sensor chip 40.

[0265] In step S17, the manufacturing apparatus attaches the protective glass 201 having a size L2 larger than the size L1 of the sensor chip 40 directly or via the thinned glass 281 to the sensor chip 40 and completes Figure 7 the image sensor 2.

[0266] Note that the processes in steps S11 to S17 can be performed at the wafer level.

[0267] However, in the case of attaching the IRCF film 221 ( Figure 12 ) to the protective glass 201, or in the case of using, for example, the protective glass 231 ( Figure 13 ) having the function of IRCF instead of the protective glass 201, the processes in steps S11 to S16 can be performed at the wafer level, and the process in S17 can be performed after dicing (singulation).

[0268] Figure 20 is a diagram showing another example of the manufacturing method of the image sensor 2.

[0269] That is, Figure 20 shows Figure 17 an example of the manufacturing method of the image sensor 2.

[0270] Note that, for simplicity of explanation, the case of attaching the IRCF film 221 ( Figure 12 ) to the protective glass 211 or the case of using, for example, the protective glass 231 ( Figure 13 ) having the function of IRCF instead of the protective glass 211 is not considered in Figure 20 .

[0271] In step S31, a manufacturing apparatus (not shown) for manufacturing the image sensor 2 manufactures and singulates the sensor chip 40.

[0272] In step S32, the manufacturing apparatus attaches the singulated sensor chips 40 to a protection glass 291 that will later become the protection glass 211 ( Figure 11 ) at a predetermined pitch.

[0273] In step S33, the manufacturing apparatus fills the periphery of the sensor chip 40 on the protection glass 291 to which the sensor chip 40 is attached with a resin 261 to seal the sensor chip 40.

[0274] In step S34, the manufacturing apparatus forms a triangular groove 292 to taper the portion of the protection glass 291 facing the periphery of the sensor chip 40.

[0275] In step S35, the manufacturing apparatus performs singulation with the vertex of the triangular groove 292 as the boundary of singulation, and completes the Figure 17 image sensor 2.

[0276] As described above, due to the miniaturization of wirings and the like, by attaching the protection glasses 201, 211, or 231 having a size larger than that of the sensor chip 40 to the sensor chip 40 in which the distance A ( Figure 7 ) between the end face of the sensor chip 40 and the pixel array unit 11 is reduced, even when the thickness of the protection glass 201 or the like is set to a thickness that can ensure the required mechanical rigidity, the occurrence of double images can be prevented.

[0277] In addition, by attaching the protection glass 211 or 231 having a trapezoidal cross-sectional shape to the sensor chip, the occurrence of double images caused by light (secondary light, tertiary light, etc.) that is reflected multiple times inside the protection glass 211 or the like can be prevented.

[0278] In addition, by depositing an IRCF film 221 ( Figure 12 ) on the protection glass 211 or by using a protection glass 231 that absorbs infrared rays and serves as an IRCF, a thin camera unit can be constructed without additionally providing an IRCF.

[0279] In addition, in the case of using the protection glass 211 on which the IRCF film 221 is deposited or the protection glass 231 that absorbs infrared rays and serves as an IRCF, both the protection glass 211 or 231 and the sensor chip 40 are singulated, and after selecting a good singulation, the protection glass 211 or 231 and the sensor chip 40 are attached. Therefore, the yield of the image sensor 2 can be increased, and the manufacturing cost can be suppressed.

[0280] <Usage Example of Image Sensor>

[0281] Figure 21 is a diagram showing a usage example of using the above-described image sensor 2.

[0282] The above-described image sensor 2 (further, a camera unit having the image sensor 2) can be used in various devices (electronic devices) for sensing light such as visible light, infrared light, ultraviolet light, and X-rays, as described below. Figure 1 - Devices for taking images for appreciation, such as digital cameras or portable devices having a camera function.

[0283] - Devices for transportation, such as in-vehicle sensors for photographing the front, rear, surroundings, interior, etc. of a car, surveillance cameras for monitoring moving vehicles and roads, or distance measurement sensors for measuring the distance between vehicles, thereby enabling, for example, safe driving during automatic parking, identification of the driver's condition, etc.

[0284] - Devices for household appliances, such as a TV, refrigerator, or air conditioner, for photographing the user's gestures to perform device operations based on the gestures.

[0285] - Devices for healthcare, such as endoscopes, electron microscopes, or devices for angiography by receiving infrared light.

[0286] - Devices for security, such as surveillance cameras for crime prevention or cameras for personal authentication.

[0287] - Devices for beauty, such as skin measuring devices for photographing the skin or microscopes for photographing the scalp.

[0288] - Devices for sports, such as action cameras or wearable cameras for sports use.

[0289] - Devices for agriculture, such as cameras for monitoring field and crop conditions.

[0290] - Devices for agriculture, such as cameras for monitoring field and crop conditions.

[0291] The embodiments of the present technology have been described above, and the embodiments of the present technology are not limited to the above embodiments. Various modifications can be made without departing from the gist of the present technology.

[0292] In addition, the effects described in this specification are merely examples, not limited, and other effects can be provided.

[0293] Please note that the present technology can also adopt the following configuration.

[0294] <1> An image sensor, comprising:

[0295] A sensor chip having a pixel array unit in which pixels for performing photoelectric conversion are arranged; and

[0296] A plate-shaped transparent member is attached to the pixel array unit side of the sensor chip and has a size larger than that of the sensor chip.

[0297] <2>The image sensor according to <1>, wherein the transparent member is a transparent member having a trapezoidal cross-sectional shape.

[0298] <3>The image sensor according to <1> or <2>, further comprising an infrared cut-off filter (IRCF) film attached to the transparent member.

[0299] <4>The image sensor according to <1> or <2>, wherein the transparent member is a transparent member that absorbs infrared rays.

[0300] <5>The image sensor according to any one of <1> to <4>, wherein the image sensor is mounted by wire bonding or flip chip.

[0301] <6>The image sensor according to any one of <1> to <5>, further comprising a light-shielding film formed on a peripheral portion of the transparent member.

[0302] <7>The image sensor according to any one of <1> to <6>, further comprising a resin that seals the periphery of the sensor chip.

[0303] <8>The image sensor according to any one of <1> to <7>, wherein the thickness of the transparent member is 200 μm or more.

[0304] <9>A manufacturing method includes the following steps:

[0305] Attaching a plate-shaped transparent member to the pixel array unit side of a sensor chip, the sensor chip having a pixel array unit in which pixels that perform photoelectric conversion are arranged,

[0306] Thereby manufacturing an image sensor having a transparent member attached thereto and having a size larger than that of the sensor chip.

[0307] <10>An electronic device includes:

[0308] An optical system that collects light; and

[0309] An image sensor that receives light and captures an image,

[0310] wherein the image sensor includes:

[0311] A sensor chip having a pixel array unit in which pixels that perform photoelectric conversion are arranged; and

[0312] A plate-shaped transparent member is attached to the pixel array unit side of the sensor chip and has a size larger than that of the sensor chip.

[0313] List of Reference Numerals

[0314] 1 Optical system

[0315] 2 Image sensor

[0316] 3 Memory

[0317] 4 Signal processing unit

[0318] 5 Output unit

[0319] 6 Control unit

[0320] 10 Sensor die

[0321] 11 Pixel array unit

[0322] 12 Peripheral circuit

[0323] 20 Logic die

[0324] 30 Memory chip

[0325] 40 Sensor chip

[0326] 41 Protection glass 42 Electrode

[0327] 43 Adhesive

[0328] 101 Semiconductor substrate

[0329] 102 (Multi-layer) wiring layer

[0330] 103 Wiring layer

[0331] 104 Interlayer insulating film

[0332] 105 Chip through electrode 106 Wiring for connection

[0333] 107, 108 Insulating film 109 Silicon through electrode 110 PD

[0334] 111 OCL

[0335] 112 CF

[0336] 121 Silicon substrate

[0337] 122 (Multi-layer) wiring layer

[0338] 123 Wiring layer

[0339] 124 Interlayer insulating film

[0340] 201, 211 Protective glass 221 IRCF film

[0341] 231 Protective glass

[0342] 241 Light-shielding film

[0343] 251 Substrate

[0344] 252 Lead 261 Resin

[0345] 281 Glass

[0346] 291 Protective glass

[0347] 292 Groove

Claims

1. An image sensor, comprising: A sensor chip having a pixel array unit in which pixels performing photoelectric conversion are arranged; A plate-shaped transparent member attached to the pixel array unit side of the sensor chip and having a size larger than that of the sensor chip; And A resin portion provided around a side wall portion of the sensor chip, wherein the resin portion is filled in a horizontal direction between a position of an end face of the plate-shaped transparent member and a position of an end face of the sensor chip, and the resin portion is filled in a vertical direction between a position of a lower surface of the plate-shaped transparent member and a position of a lower surface of the sensor chip.

2. The image sensor according to claim 1, wherein, An end face of the resin portion and an end face of the plate-shaped transparent member are aligned.

3. The image sensor according to claim 1, wherein, A length of the plate-shaped transparent member in a horizontal direction is equal to a sum of a length of the resin portion in the horizontal direction and a length of the sensor chip in the horizontal direction.

4. The image sensor according to claim 1, wherein, The resin portion is a light-shielding resin.

5. The image sensor according to claim 1, wherein, The sensor chip has a stacked structure of a sensor die and a logic die, and the pixel array unit is provided in the sensor die.

6. The image sensor according to claim 5, wherein, A length of the sensor die in a horizontal direction and a length of the logic die in a horizontal direction are the same.

7. The image sensor according to claim 1, further comprising an adhesive layer provided between the sensor chip and the plate-shaped transparent member.

8. The image sensor according to claim 7, wherein, A length of the sensor chip and the adhesive layer in a horizontal direction are the same.

9. The image sensor according to claim 1, further comprising an infrared cut-off filter film attached to the plate-shaped transparent member.

10. The image sensor according to claim 1, wherein the plate-shaped transparent member is a transparent member that absorbs infrared rays.

11. The image sensor according to claim 1, wherein the image sensor is mounted by wire bonding or flip chip.

12. The image sensor according to claim 1, further comprising a light-shielding film formed on a peripheral portion of the plate-shaped transparent member.

13. The image sensor according to claim 1, wherein an end portion of the plate-shaped transparent member extends beyond a side wall portion of the sensor chip.

14. The image sensor according to claim 1, wherein a thickness of the plate-shaped transparent member is 200 μm or more.

15. An electronic device, comprising: An optical system for collecting light; And The image sensor according to any one of claims 1-14, which receives light and captures an image.

Images