Enhanced architecture for high performance detection device technology

Abstract

A detector includes a plurality of sensing elements, section circuitry communicatively coupling a first set of sensing elements to an input of first signal processing circuitry, and a switch network connecting the set of sensing elements. Inter-element switches can connect adjacent sensing elements, including sensing elements in a diagonal direction. An output bus can be connected to each sensing element in the first set through a switch element. A common output (pick-off point) can be disposed at one sensing element, configured to output signals from the first set. Various switch and wiring schemes are presented. For example, the common output can be directly connected to the switch network. A switch can be provided between the output bus and the first signal processing circuitry. A switch can be provided between the switch network and the first signal processing circuitry.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority to U.S. Application 63 / 031,486, filed May 28, 2020, which is incorporated herein by reference in its entirety. Technical Field

[0003] This article describes detectors, and more specifically, detectors that can be applied to the detection of charged particles. Background Technology

[0004] In the manufacturing process of integrated circuits (ICs), incomplete or finished circuit components are inspected to ensure they are manufactured according to the design and free of defects. Inspection systems using optical microscopes typically have a resolution as low as a few hundred nanometers, and this resolution is limited by the wavelength of light. As the physical size of IC components continues to shrink to below 100 nanometers and even below 10 nanometers, inspection systems with higher resolution than those using optical microscopes are needed.

[0005] Charged particle (e.g., electron) beam microscopy (such as scanning electron microscopy (SEM) or transmission electron microscopy (TEM)) can reduce resolution to below nanometers, serving as a practical tool for inspecting IC components with feature sizes below 100 nanometers. Using SEM, electrons from a single primary charged particle beam or multiple primary charged particle beams can be focused at a location of interest on a wafer to be inspected. The primary electrons interact with the wafer and may be backscattered or cause the wafer to emit secondary electrons. The intensity of the electron beam, including backscattered and secondary electrons, can vary based on characteristics of the wafer's internal and external structures, thereby indicating the presence of defects in the wafer. Summary of the Invention

[0006] Embodiments of this disclosure include apparatus, systems, and methods for beam detection (such as ultrafast beam current detection) in charged particle inspection systems. In some embodiments, a detector may include a set of sensing elements, including a first set of sensing elements and a second set of sensing elements. The detector may also include a first segment circuit system configured to communicatively couple the first set of sensing elements to an input of a first signal processing circuit system. The detector may also include a second segment circuit system configured to communicatively couple the second set of sensing elements to an input of a second signal processing circuit system. The detector may also include an interconnect circuit system configured to communicatively couple the output of the first signal processing circuit system to the output of the second signal processing circuit system. In some embodiments, the detection system may also include an interface configured to control image signal processing of the detection system.

[0007] In some embodiments, the charged particle inspection system may include a charged particle beam source configured to generate a primary charged particle beam for scanning a sample. The charged particle inspection system may also include a detector configured to receive a secondary charged particle beam exiting from the incident point of the primary charged particle beam. The detector may include a set of sensing elements, including a first set of sensing elements and a second set of sensing elements. The detector may also include a first segment circuit system configured to communicatively couple the first set of sensing elements to an input of a first signal processing circuit system. The detector may also include a second segment circuit system configured to communicatively couple the second set of sensing elements to an input of a second signal processing circuit system. The detector may also include an interconnect circuit system configured to communicatively couple the output of the first signal processing circuit system to the output of the second signal processing circuit system.

[0008] In some embodiments, the first signal processing circuit system may include a first amplifier, and the second signal processing circuit system may include a second amplifier. At least one of the first amplifier or the second amplifier may be configured to perform one of the following: receiving a current signal and outputting an amplified current signal; or receiving a charge signal and outputting an amplified charge signal.

[0009] In some embodiments, the computer-implemented method may include determining a group of sensing elements, the group of sensing elements including sensing elements projected by a beam spot of a charged particle beam in a charged particle detector. The computer-implemented method may further include determining whether a total analog signal bandwidth for processing an output signal of the group of sensing elements at a predetermined pixel rate satisfies a condition. The computer-implemented method may further include dividing the group of sensing elements into a plurality of subgroups of sensing elements based on the determination that the total analog signal bandwidth satisfies the condition, each subgroup of sensing elements including at least one sensing element of the group of sensing elements. The computer-implemented method may further include communicatively coupling the plurality of subgroups of sensing elements to a plurality of signal processing circuitry of a charged particle detector. The computer-implemented method may further include determining a combined signal using the output signals of the plurality of signal processing circuitry at a first output of an interconnect layer communicatively coupled to the plurality of signal processing circuitry. The computer-implemented method may further include outputting the combined signal to a first analog-to-digital converter (ADC), the first analog-to-digital converter (ADC) being communicatively coupled to the first output of the interconnect layer.

[0010] In some embodiments, the detector may include a set of sensing elements including a first common output. The detector may also include inter-element switching elements configured to communicatively couple adjacent sensing elements in the set. The detector may also include an output bus configured to communicatively couple to each sensing element in the set. The detector may also include contacts configured to communicatively couple to the first common output via a first switching element and to the output bus via a second switching element. The detector may further include a switching network disposed between the first common output and the first switching elements, the switching network including inter-set switching elements configured to communicatively couple the first common output to a second common output in another set of sensing elements.

[0011] In some embodiments, as discussed above, the detection system may include a detector. The detection system may also include an output bus configured to communicatively couple to each sensing element in a set of sensing elements. The detection system may also include a contact configured to communicatively couple to a first common output via a first switching element and to the output bus via a second switching element. The detection system may further include a switching network disposed between the first common output and the first switching element, the switching network including inter-set switching elements configured to communicatively couple the first common output to a second common output in another set of sensing elements. The detection system may also include a signal processing circuitry system communicatively coupled downstream of the contact and configured to process signals from the contact.

[0012] In some embodiments, the charged particle inspection system may include a charged particle beam source configured to generate a primary charged particle beam for scanning a sample. The charged particle inspection system may also include a detector configured to receive a secondary charged particle beam exiting from the incident point of the primary charged particle beam. The detector may include a set of sensing elements including a first common output. The detector may also include inter-element switching elements configured to communicatively couple adjacent sensing elements in the set of sensing elements. The detector may also include an output bus configured to communicatively couple to each sensing element in the set of sensing elements. The detector may also include contacts configured to communicatively couple to the first common output via a first switching element and to the output bus via a second switching element. The detector may also include a switching network disposed between the first common output and the first switching element, the switching network including inter-set switching elements configured to communicatively couple the first common output to a second common output in another set of sensing elements.

[0013] In some embodiments, the computer-implemented method may include receiving charged particles from a secondary charged particle beam at a first segment and a second segment of a sensing element of a charged particle detector, wherein the first segment and the second segment are adjacent segments capable of independently detecting charged particles. The computer-implemented method may further include receiving instruction data indicating one of a first mode or a second mode for operating the charged particle detector. The computer-implemented method may further include, based on the instruction data, causing one of the following: outputting a combined signal corresponding to the second mode, determined using signals from at least one of the first segment or the second segment; or outputting an independent signal corresponding to the first mode, from at least one of the first segment or the second segment.

[0014] In some embodiments, a non-transient computer-readable medium may store a set of instructions executable by at least one processor of the device to cause the device to perform a method. The method may include receiving charged particles from a secondary charged particle beam at a first segment and a second segment of a sensing element of a charged particle detector, wherein the first and second segments are adjacent segments capable of independently detecting charged particles. The method may further include receiving instruction data indicating one of a first mode or a second mode for operating the charged particle detector. The method may further include, based on the instruction data, causing one of the following: outputting a combined signal corresponding to the second mode, determined using signals from at least one of the first or second segments; or outputting an independent signal corresponding to the first mode, from at least one of the first or second segments.

[0015] In some embodiments, the inter-element switching element disposed in the detector may include a first inter-element switching element configured to communicatively couple a first sensing element to a second sensing element, wherein the first and second sensing elements are arranged along a first direction of the set of sensing elements. The inter-element switching element may also include a second inter-element switching element configured to communicatively couple the first sensing element to a third sensing element, wherein the first and third sensing elements are arranged along a second direction orthogonal to the first direction. The inter-element switching element may also include a third inter-element switching element configured to communicatively couple the second sensing element to the third sensing element.

[0016] In some embodiments, the computer-implemented method may include receiving charged particles from a secondary charged particle beam at a first sensing element and a second sensing element of a charged particle detector, wherein the first sensing element and the second sensing element are adjacent sensing elements communicatively coupled in a diagonal direction within a segment of the sensing element via an inter-element switching element. The computer-implemented method may further include outputting a common signal by adding a first signal output from the first sensing element to a second signal output from the second sensing element.

[0017] In some embodiments, a non-transient computer-readable medium may store a set of instructions executable by at least one processor of the device to cause the device to perform a method. The method may include receiving charged particles from a secondary charged particle beam at a first sensing element and a second sensing element of a charged particle detector, wherein the first sensing element and the second sensing element are adjacent sensing elements communicatively coupled diagonally in a segment of sensing elements via inter-element switching elements. The method may further include outputting a common signal by adding a first signal output from the first sensing element to a second signal output from the second sensing element. Attached Figure Description

[0018] Figure 1 This is a schematic diagram illustrating an exemplary charged particle beam inspection system according to an embodiment of the present disclosure.

[0019] Figure 2 This is a schematic diagram illustrating an exemplary multi-beam firing tool according to an embodiment of the present disclosure. The multi-beam firing tool may be... Figure 1 This is part of an exemplary charged particle beam inspection system.

[0020] Figure 3A This is a schematic diagram of an exemplary structure of a detector according to an embodiment of the present disclosure.

[0021] Figure 3B This is a diagram illustrating an exemplary surface of a detector array according to an embodiment of the present disclosure.

[0022] Figure 4 This is a diagram illustrating an exemplary detector array with switching elements according to an embodiment of the present disclosure.

[0023] Figure 5 This is a cross-sectional view illustrating the layer structure of a detector according to an embodiment of the present disclosure.

[0024] Figure 6 This is a cross-sectional view illustrating the sensing element of a detector according to an embodiment of the present disclosure.

[0025] Figure 7 This is a diagram illustrating an exemplary cross-sectional arrangement of a detector according to an embodiment of the present disclosure.

[0026] Figure 8 This is a diagram illustrating another exemplary cross-sectional arrangement of the detector according to an embodiment of the present disclosure.

[0027] Figure 9 This is a diagram illustrating a detection system according to an embodiment of the present disclosure.

[0028] Figure 10 This is a diagram illustrating a detector array with an exemplary architecture according to an embodiment of the present disclosure.

[0029] Figure 11 This is a diagram illustrating an exemplary amplifier operating in current mode according to an embodiment of the present disclosure.

[0030] Figure 12 This is a diagram illustrating an exemplary analog-to-digital converter operating in current mode according to an embodiment of the present disclosure.

[0031] Figure 13 This indicates that, according to embodiments of the present disclosure, it has Figure 10 A diagram showing an exemplary cross-sectional arrangement of the detector in an exemplary architecture.

[0032] Figure 14 This is a diagram illustrating a detector array having another exemplary architecture according to an embodiment of the present disclosure.

[0033] Figure 15 This is a flowchart of an exemplary method for detecting a beam of charged particles according to embodiments of the present disclosure.

[0034] Figure 16A This is a diagram illustrating an exemplary switch network or switch matrix design for a detector array according to an embodiment of the present disclosure.

[0035] Figure 16B The illustration shows an embodiment according to the present disclosure. Figure 16A A diagram of adjacent sensing elements in a detector array.

[0036] Figure 17A This is a diagram illustrating another exemplary switch network or switch matrix design for a detector array according to an embodiment of the present disclosure.

[0037] Figure 17B The illustration shows an embodiment according to the present disclosure. Figure 17A A diagram of adjacent sensing elements in a detector array.

[0038] Figure 17C The illustration shows an embodiment according to the present disclosure. Figure 17A A diagram of beam spots on adjacent sensing elements of the detector array.

[0039] Figure 18A This is a diagram illustrating an exemplary enhanced switch network or switch matrix design for a detector array according to an embodiment of the present disclosure.

[0040] Figure 18B The illustration shows an embodiment according to the present disclosure. Figure 18A A diagram of adjacent sensing elements in a detector array.

[0041] Figure 18C The illustration shows an embodiment according to the present disclosure. Figure 18A A diagram of the beam spots on the sensing element of the detector array.

[0042] Figure 19A This is a diagram illustrating another exemplary enhanced switch network or switch matrix design for a detector array according to an embodiment of the present disclosure.

[0043] Figure 19B The illustration shows an embodiment according to the present disclosure. Figure 19A A diagram of the sensing elements in the detector array.

[0044] Figure 20 This is a flowchart of an exemplary method for generating a charged particle detection signal according to embodiments of the present disclosure. Detailed Implementation

[0045] Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. The following description refers to the accompanying drawings, wherein the same reference numerals in different drawings denote the same or similar elements unless otherwise stated. The implementations set forth in the following description of the exemplary embodiments do not represent all implementations conforming to this disclosure. Rather, they are merely examples of apparatuses and methods conforming to aspects relevant to the subject matter recited in the appended claims. For example, although some embodiments are described in the context of utilizing charged particle beams (e.g., electron beams), this disclosure is not limited thereto. Other types of charged particle beams can be similarly applied. Furthermore, other imaging systems, such as optical imaging, photoelectric detection, X-ray detection, etc., can be used.

[0046] Electronic devices are made up of circuits formed on a semiconductor material called a substrate. Semiconductor materials can include, for example, silicon, gallium arsenide, indium phosphide, or silicon germanium. Many circuits can be formed together on the same silicon substrate and are called integrated circuits or ICs. The size of these circuits has been reduced significantly, so more circuits can be mounted on the substrate. For example, the IC chip in a smartphone can be as small as a thumbnail, yet may contain more than 2 billion transistors, each less than 1 / 1000th the size of a human hair.

[0047] Manufacturing these ICs with extremely small structures or components is a complex, time-consuming, and expensive process, typically involving hundreds of individual steps. Even an error in one step can lead to a defect in the finished IC, rendering it useless. Therefore, one goal of the manufacturing process is to avoid such defects in order to maximize the number of functional ICs manufactured in the process; that is, to improve the overall yield of the process.

[0048] A component of improving yield is monitoring the chip manufacturing process to ensure that a sufficient number of functional integrated circuits are produced. One way to monitor this process is to inspect the chip's circuit structure at different stages of chip formation. This can be done using a scanning charged particle microscope (“SCPM”). For example, an SCPM could be a scanning electron microscope (SEM). SCPM is used to image these extremely small structures, essentially taking “pictures” of the wafer's structure. This image can be used to determine if the structure is correctly formed in the correct location. If the structure is defective, the process can be adjusted so that the defect is less likely to recur.

[0049] A surface-mount electron microscope (SEM) works similarly to a camera. A camera takes pictures by receiving and recording the intensity of light reflected or emitted from a person or object. A SEM takes "pictures" by receiving and recording the energy or quantity of electrons reflected or emitted from a wafer structure. Before taking such "pictures," an electron beam can be projected onto the structure, and as electrons are reflected or emitted ("emitted") from the structure (e.g., from the wafer surface, from a structure beneath the wafer surface, or from both), the SEM's detectors can receive and record the energy or quantity of these electrons to generate an inspection image. To take such "pictures," the electron beam can scan across the wafer (e.g., in a row-by-row or zigzag pattern), and the detectors can receive emitted electrons from the area under the projection of the electron beam (called a "beam spot"). The detectors can receive and record emitted electrons from each beam spot sequentially, and combine the information recorded for all beam spots to generate an inspection image. Some SEMs use a single electron beam (called "single-beam SEM") to capture a single "image" to generate an inspection image, while others use multiple electron beams (called "multi-beam SEM") to capture multiple "sub-images" of the wafer in parallel and stitch them together to generate an inspection image. By using multiple electron beams, the SEM can deliver more electron beams to the structure to obtain these multiple "sub-images," resulting in more electrons emanating from the structure. Therefore, the detector can receive more emitted electrons simultaneously and generate inspection images of the wafer structure with greater efficiency and faster speed.

[0050] The emitted electrons received by the detector in a SEM can cause the detector to generate an electrical signal (e.g., a current signal or a voltage signal) commensurate with the energy of the emitted electrons and the intensity of the electron beam. For example, the amplitude of the electrical signal can be commensurate with the charge of the received emitted electrons. The detector can output the electrical signal to an image processor, and the image processor can process the electrical signal to form an image of the wafer structure. Multi-beam SEM systems use multiple electron beams for inspection, and the detectors in a multi-beam SEM system can have multiple segments to receive them. Each segment can have multiple sensing elements and can be used to form a "picture" of a sub-region of the wafer. The "pictures" generated based on the signals from each segment of the detector can be merged to form a complete image of the inspected wafer.

[0051] The detector segments can be communicatively interconnected. Each segment can have corresponding signal processing circuitry for processing the electrical signals generated by the detector. When an electron beam strikes a segment, its signal processing circuitry can be activated for signal processing. When an electron beam strikes multiple adjacent segments, their signal processing circuitry can be activated in a coordinated manner. When no electron beam strikes a segment, its signal processing circuitry may be deactivated. When an electron beam strikes a faulty segment, the signal processing circuitry of its adjacent segments can be activated for signal processing. Through this design of interconnected segments, the SEM detector can provide flexibility and fault tolerance for signal processing.

[0052] Detectors have many performance metrics. One metric is the "pixel rate," which is the rate at which pixels are generated to produce an inspected image. Pixel rate can indicate the digital data processing bandwidth of a digital system, and the detector's maximum pixel rate indicates its maximum digital data processing speed. Another metric is the "analog signal bandwidth," which is the range of frequencies between the lowest and highest frequencies achievable by an analog signal. High-frequency analog signals can reflect the "details" of the inspected structure. Analog signal bandwidth indicates the detector's detection capability and the fineness of the inspection results, which is a different performance metric from pixel rate. For example, even with a high pixel rate, if the analog signal bandwidth is low, the inspected image may still be blurry because some details of the structure may be lost due to the low analog signal bandwidth and may not be reflected in the inspected image.

[0053] Pixel rate and analog signal bandwidth are prone to generating "parasitic parameters," which are undesirable or unexpected electromagnetic effects introduced by the detector's operating components. Parasitic parameters can include parasitic capacitance (e.g., stray capacitance), parasitic resistance, or parasitic inductance. Parasitic parameters can occur even when some components are not in operation. They can alter component design specifications and adversely affect detector performance, such as suppressing signal dynamics and reducing pixel rate. For example, stray capacitance can impede charge movement. Parasitic resistance can increase internal detection signal loss. Parasitic inductance can impede the flow of dynamic current. Furthermore, parasitic parameters can introduce noise and interference into the inspected image. Ideally, detectors are designed to minimize the generation of parasitic parameters.

[0054] Pixel rate and analog signal bandwidth can have a critical impact on other detector performance metrics, such as signal-to-noise ratio (“SNR”) or detector performance capacity (e.g., maximum detection speed or maximum inspection throughput). To increase pixel rate and analog signal bandwidth, detectors can be designed to shorten the electrical distances between the individual sensing elements and their signal processing circuitry, which can suppress the generation of parasitic parameters (e.g., series resistance, parasitic capacitance, or series inductance). Alternatively, the architecture of the signal processing circuitry can be enhanced or redesigned to make the detector less sensitive to parasitic parameters.

[0055] However, existing interconnect design for detectors still faces several challenges related to analog signal bandwidth and pixel rate. For example, there are aspects such as: further suppressing the generation of parasitic parameters, reducing the impact of parasitic parameters on analog signal bandwidth, increasing the processing bandwidth of analog or digital signal processing, or increasing pixel rate and detector performance adaptability without incurring significant costs.

[0056] This disclosure provides a detector with an improved architecture for enhancing analog signal bandwidth and pixel rate. In some embodiments of the detector, an interconnect layer is provided between the detector's analog signal processing circuitry and a current- or charge-based analog-to-digital converter (ADC) corresponding to the analog signal processing circuitry. Compared to an equivalent voltage-based analog processing circuitry, this architecture offers the advantage of reduced sensitivity of the current- or charge-based analog processing circuitry, allowing for a relative increase in analog signal bandwidth. The interconnect layer can communicatively couple the outputs of the analog signal processing circuitry to each other via interconnect switching elements. Switching elements can be provided at the inputs and outputs of the analog signal processing circuitry. By controlling the switching elements, different analog signal processing circuits can be communicatively activated or deactivated within the detector. By coupling the outputs of different analog signal processing circuits via interconnect switching elements in the interconnect layer, multiple analog signal processing circuits can be associated with a single current- or charge-based ADC via the interconnect layer, thereby achieving high analog signal bandwidth without requiring additional digital output capacity. By coupling the ADC via the interconnect layer, the ADC can be controlled to operate in an interleaved mode, which can provide a higher pixel rate than the specifications of a single ADC. In summary, by using the provided architecture, the limits of the performance adaptability and capabilities of existing detectors can be pushed further.

[0057] In addition, existing designs for detector segments face several challenges. Typically, a detector segment may include multiple charged particle sensing elements arranged in an array and switches positioned between adjacent sensing elements. However, some existing electrical connection schemes for the components used in the detector segment may involve an excessive number of switches, which can introduce excessive parasitic parameters (e.g., equivalent series resistance or parasitic capacitance) in the signal processing circuitry. Furthermore, many existing designs only arrange the inter-element switches in the horizontal or vertical direction of the segment, which may limit detector performance (e.g., analog signal bandwidth and configuration flexibility).

[0058] This disclosure provides a detector with an improved architecture for improving analog signal bandwidth, pixel rate, and detector configuration flexibility. In some embodiments of the detector, the number of switches between segments and corresponding signal processing circuitry is reduced. In some embodiments of the detector, switches can be provided between diagonally adjacent sensing elements. The advantage of this architecture is that it can further reduce the side effects of parasitic parameters induced in the signal processing circuitry (e.g., in some cases, by 50% or more), which enables higher analog signal bandwidth. Other advantages of this architecture include improved segment configuration flexibility. Overall, by using the provided architecture, the performance, adaptability, and capabilities of existing detectors can be significantly improved.

[0059] For clarity, the relative dimensions of the parts in the accompanying drawings may be enlarged. In the following description of the drawings, the same or similar reference numerals refer to the same or similar parts or entities, and only the differences with respect to the corresponding embodiments are described.

[0060] The objectives and advantages of this disclosure can be achieved by the elements and combinations set forth in the embodiments discussed herein. However, embodiments of this disclosure are not necessarily required to achieve such exemplary objectives or advantages, and some embodiments may not achieve any of the stated objectives or advantages.

[0061] Without limiting the scope of this disclosure, some embodiments can be described in the context of providing detection systems and methods in systems utilizing electron beams (“e-beams”). However, this disclosure is not limited thereto. Other types of charged particle beams can be similarly applied. Furthermore, the systems and methods used for detection can be used in other imaging systems (such as optical imaging, photon detection, X-ray detection, ion detection, etc.).

[0062] As used herein, unless otherwise expressly stated, the term "or" covers all possible combinations unless impractical. For example, if a descriptive component may include A or B, then unless otherwise expressly stated or impractical, the component may include A, or B, or A and B. As a second example, if a descriptive component may include A, B, or C, then unless otherwise expressly stated or impractical, the component may include A, or B, or C, or A and B, or A and C, or B and C, or A and B and C.

[0063] Figure 1 An exemplary electron beam inspection (EBI) system 100 according to an embodiment of the present disclosure is illustrated. The EBI system 100 can be used for imaging. Figure 1 As shown, the EBI system 100 includes a main chamber 101, a loading / locking chamber 102, a beam tool 104, and an Equipment Front End Module (EFEM) 106. The beam tool 104 is located within the main chamber 101. The EFEM 106 includes a first loading port 106a and a second loading port 106b. The EFEM 106 may include additional loading ports(s). The first loading port 106a and the second loading port 106b receive a front-opening wafer integration unit (FOUP) containing a wafer to be inspected (e.g., a semiconductor wafer or a wafer made of(s) other materials) or a sample (wafers and samples are interchangeable). A “lot” is a group of wafers that can be loaded as a batch for processing.

[0064] One or more robotic arms (not shown) in EFEM 106 can transfer the wafer to loading / locking chamber 102. Loading / locking chamber 102 is connected to a loading / locking vacuum pump system (not shown) that removes gas molecules from loading / locking chamber 102 to achieve a first pressure below atmospheric pressure. After reaching the first pressure, one or more robotic arms (not shown) can transfer the wafer from loading / locking chamber 102 to main chamber 101. Main chamber 101 is connected to a main chamber vacuum pump system (not shown) that removes gas molecules from main chamber 101 to achieve a second pressure below the first pressure. After reaching the second pressure, the wafer is inspected by beam tool 104. Beam tool 104 can be a single-beam system or a multi-beam system.

[0065] Controller 109 is electrically connected to beam tool 104. Controller 109 may be a computer configured to perform various controls of EBI system 100. Although controller 109 is... Figure 1 The controller 109 is shown outside the structure including the main chamber 101, the loading / locking chamber 102 and the EFEM 106, but it should be understood that the controller 109 may be part of the structure.

[0066] In some embodiments, controller 109 may include one or more processors (not shown). A processor may be a general-purpose or specialized electronic device capable of manipulating or processing information. For example, a processor may include any number of central processing units (or “CPU”), graphics processing units (or “GPU”), optical processors, programmable logic controllers, microcontrollers, microprocessors, digital signal processors, intellectual property (IP) cores, programmable logic arrays (PLAs), programmable array logic (PALs), general-purpose array logic (GALs), complex programmable logic devices (CPLDs), field-programmable gate arrays (FPGAs), system-on-a-chip (SoCs), application-specific integrated circuits (ASICs), and any combination of any type of circuitry capable of data processing. A processor may also be a virtual processor, comprising one or more processors distributed across multiple machines or devices coupled via a network.

[0067] In some embodiments, controller 109 may also include one or more memories (not shown). The memory can be a general-purpose or specific electronic device capable of storing processor-accessible code and data (e.g., via a bus). For example, the memory may include any number of random access memory (RAM), read-only memory (ROM), optical disc, magnetic disk, hard disk, solid-state drive, flash drive, secure digital card (SD) card, memory stick, compressed flash memory (CF) card, or any combination of any type of storage device. The code and data may include an operating system (OS) and one or more applications (or "applications apps") for a specific task. The memory may also be virtual memory, which includes one or more memories distributed across multiple machines or devices coupled via a network.

[0068] Figure 2 The illustration shows a schematic diagram of an exemplary multi-beam tool 104 (also referred to herein as apparatus 104) and an image processing system 290 according to an embodiment of the present disclosure, which image processing system 290 can be configured for use in EBI system 100 ( Figure 1 )middle.

[0069] The beam-emitting tool 104 includes a charged particle source 202, a bore 204, a focusing lens 206, a primary charged particle beam 210 emitted from the charged particle source 202, a source conversion unit 212, multiple sub-beams 214, 216, and 218 of the primary charged particle beam 210, a primary projection optics system 220, an electro-energized wafer stage 280, a wafer holder 282, multiple secondary charged particle beams 236, 238, and 240, a secondary optics system 242, and a charged particle detection device 244. The primary projection optics system 220 may include a beam splitter 222, a deflection scanning unit 226, and an objective lens 228. The charged particle detection device 244 may include detection sub-regions 246, 248, and 250.

[0070] The charged particle source 202, the gun hole 204, the focusing lens 206, the source conversion unit 212, the beam splitter 222, the deflection scanning unit 226, and the objective lens 228 can be aligned with the primary optical axis 260 of the device 104. The secondary optical system 242 and the charged particle detection device 244 can be aligned with the secondary optical axis 252 of the device 104.

[0071] Charged particle source 202 can emit one or more charged particles, such as electrons, protons, ions, muons, or any other charged particles. In some embodiments, charged particle source 202 can be an electron source. For example, charged particle source 202 can include a cathode, extractor, or anode, wherein primary electrons can be emitted from the cathode and extracted or accelerated to form a primary charged particle beam 210 (in this case, a primary electron beam) having a cross (virtual or real) 208. For ease of explanation and without ambiguity, electrons are used as examples in some descriptions herein. However, it should be noted that any charged particle can be used in any embodiment of this disclosure, not limited to electrons. The primary charged particle beam 210 can be considered to be emitted from the cross 208. The aperture 204 can block peripheral charged particles of the primary charged particle beam 210 to reduce the Coulomb effect. The Coulomb effect can lead to an increase in the size of the probe spot.

[0072] Source conversion unit 212 may include an image forming element array and a beam confinement aperture array. The image forming element array may include a micro-deflector or microlens array. The image forming element array can utilize multiple sub-beams 214, 216, and 218 of the primary charged particle beam 210 to form multiple parallel images (virtual or real) of the intersection 208. The beam confinement aperture array can confine multiple sub-beams 214, 216, and 218. Although Figure 2 Three sub-bundles 214, 216, and 218 are shown, but embodiments of this disclosure are not limited thereto. For example, in some embodiments, device 104 may be configured to generate a first number of sub-bundles. In some embodiments, the first number of sub-bundles may be in the range of 1 to 1000. In some embodiments, the first number of sub-bundles may be in the range of 200 to 500. In an exemplary embodiment, device 104 may generate 400 sub-bundles.

[0073] The focusing lens 206 can focus the primary charged particle beam 210. The currents of the sub-beams 214, 216, and 218 downstream of the source conversion unit 212 can be varied by adjusting the focusing capability of the focusing lens 206 or by changing the radial dimensions of the corresponding beam-limiting apertures in the beam-limiting aperture array. The objective lens 228 can focus the sub-beams 214, 216, and 218 onto the wafer 230 for imaging, and can form multiple probe spots 270, 272, and 274 on the surface of the wafer 230.

[0074] Beam splitter 222 can be a Wien filter-type beam splitter that generates electrostatic dipole fields and magnetic dipole fields. In some embodiments, if electrostatic dipole fields and magnetic dipole fields are applied, the force exerted by the electrostatic dipole field on the charged particles (e.g., electrons) of sub-bundles 214, 216, and 218 on the sub-bundles 214, 216, and 218 on the sub-bundles 214, 216, and 218 on the sub-bundles 214, 216, and 218 on the sub-bundles 214, 216, and 218 on the sub-bundles 214, 216, and 218 generated by beam splitter 222 can also be non-zero. Beam splitter 222 can separate secondary charged particle beams 236, 238, and 240 from sub-bundles 214, 216, and 218 and guide secondary charged particle beams 236, 238, and 240 to secondary optical system 242.

[0075] The deflection scanning unit 226 can deflect sub-beams 214, 216, and 218 to scan probe spots 270, 272, and 274 on the surface region of wafer 230. In response to the incident sub-beams 214, 216, and 218 at probe spots 270, 272, and 274, secondary charged particle beams 236, 238, and 240 can be emitted from wafer 230. The secondary charged particle beams 236, 238, and 240 can include charged particles (e.g., electrons) with an energy distribution. For example, the secondary charged particle beams 236, 238, and 240 can be secondary electron beams comprising secondary electrons (energy ≤ 50 eV) and backscattered electrons (energy between 50 eV and the landing energies of sub-beams 214, 216, and 218). The secondary optical system 242 can focus the secondary charged particle beams 236, 238, and 240 onto the detection sub-regions 246, 248, and 250 of the charged particle detection device 244. The detection sub-regions 246, 248, and 250 can be configured to detect the corresponding secondary charged particle beams 236, 238, and 240 and generate corresponding signals (e.g., voltage, current, etc.) for reconstructing SCPM images of structures on or under the surface region of the wafer 230.

[0076] The generated signals can represent the intensity of the secondary charged particle beams 236, 238, and 240, and can be provided to an image processing system 290, which communicates with the charged particle detection device 244, the primary projection optics system 220, and the electro-optical wafer stage 280. The movement speed of the electro-optical wafer stage 280 can be synchronized and coordinated with the beam deflection controlled by the deflection scanning unit 226, so that the movement of the scanning probe spots (e.g., scanning probe spots 270, 272, and 274) can orderly cover the region of interest on the wafer 230. Such synchronization and coordination parameters can be adjusted to accommodate different materials of the wafer 230. For example, different materials of the wafer 230 may have different resistivity-capacitance characteristics, which may result in different signal sensitivities to the movement of the scanning probe spots.

[0077] The intensities of the secondary charged particle beams 236, 238, and 240 can vary depending on the external or internal structure of the wafer 230, and thus can indicate whether the wafer 230 contains defects. Furthermore, as discussed above, sub-beams 214, 216, and 218 can be projected to different locations on the top surface of the wafer 230, or to different sides of a local structure of the wafer 230, to generate secondary charged particle beams 236, 238, and 240 with varying intensities. Therefore, by mapping the intensities of the secondary charged particle beams 236, 238, and 240 to regions of the wafer 230, the image processing system 290 can reconstruct an image reflecting the internal or external structural features of the wafer 230.

[0078] In some embodiments, the image processing system 290 may include an image acquirer 292, a storage device 294, and a controller 296. The image acquirer 292 may include one or more processors. For example, the image acquirer 292 may include a computer, server, mainframe, terminal, personal computer, any kind of mobile computing device, or a combination thereof. The image acquirer 292 may be communicatively coupled to the charged particle detection device 244 of the beam tool 104 via a medium such as an electrical conductor, fiber optic cable, portable storage medium, IR, Bluetooth, the Internet, wireless network, radio, or a combination thereof. In some embodiments, the image acquirer 292 may receive signals from the charged particle detection device 244 and may construct an image. The image acquirer 292 may thus acquire an SCPM image of the wafer 230. The image acquirer 292 may also perform various post-processing functions, such as generating contours, overlaying indicators on the acquired image, etc. The image acquirer 292 may be configured to perform adjustments to the brightness and contrast of the acquired image. In some embodiments, storage device 294 may be a storage medium, such as a hard disk, flash drive, cloud storage, random access memory (RAM), or other types of computer-readable storage. Storage device 294 may be coupled to image acquirer 292 and may be used to save scanned raw image data as an initial image and to save post-processed images. Image acquirer 292 and storage device 294 may be connected to controller 296. In some embodiments, image acquirer 292, storage device 294, and controller 296 may be integrated into a single control unit.

[0079] In some embodiments, image acquisition unit 292 may acquire one or more SCPM images of a wafer based on imaging signals received from charged particle detection device 244. The imaging signals may correspond to a scanning operation for performing charged particle imaging. The acquired image may be a single image comprising multiple imaging regions. The single image may be stored in storage device 294. The single image may be an initial image that can be divided into multiple regions. Each region may include an imaging region containing features of wafer 230. The acquired images may include multiple images of a single imaging region of wafer 230 sampled multiple times over a time series. Multiple images may be stored in storage device 294. In some embodiments, image processing system 290 may be configured to perform image processing steps on multiple images of the same location on wafer 230.

[0080] In some embodiments, the image processing system 290 may include measurement circuitry (e.g., an analog-to-digital converter) to obtain the distribution of detected secondary charged particles (e.g., secondary electrons). Combined with corresponding scan path data of sub-beams 214, 216, and 218 incident on the wafer surface, the charged particle distribution data collected during the detection time window can be used to reconstruct an image of the inspected wafer structure. The reconstructed image can be used to reveal various features of the internal or external structure of the wafer 230, and thereby can be used to reveal any defects that may be present in the wafer.

[0081] In some embodiments, the charged particles may be electrons. When electrons from the primary charged particle beam 210 are projected onto the surface of the wafer 230 (e.g., probe spots 270, 272, and 274), the electrons from the primary charged particle beam 210 can penetrate to a certain depth into the surface of the wafer 230 and interact with the particles of the wafer 230. Some electrons from the primary charged particle beam 210 may interact elastically with the material of the wafer 230 (e.g., in the form of elastic scattering or collision) and may be reflected or bounced off the surface of the wafer 230. Elastic interactions conserve the total kinetic energy of the interacting subjects (e.g., electrons from the primary charged particle beam 210), meaning that the kinetic energy of the interacting subjects is not converted into other forms of energy (e.g., heat, electromagnetic energy, etc.). Such reflected electrons generated by elastic interactions may be referred to as backscattered electrons (BSE). Some electrons from the primary charged particle beam 210 may interact inelastically with the material of the wafer 230 (e.g., in the form of inelastic scattering or collision). Inelastic interactions cause the total kinetic energy of the interacting subjects to be non-conserved, where some or all of the kinetic energy of the interacting subjects is converted into other forms of energy. For example, through inelastic interactions, the kinetic energy of some electrons in the primary charged particle beam 210 can induce electronic excitation and atomic transitions in the material. Such inelastic interactions can also generate electrons leaving the surface of wafer 230, which can be called secondary electrons (SEs). The yield or emission rate of BSEs and SEs depends, for example, on the material being examined and the landing energy of the electrons in the primary charged particle beam 210 landing on the material surface, etc. The electron energy of the primary charged particle beam 210 can be partially determined by its accelerating voltage (e.g., at...). Figure 2 The accelerating voltage between the anode and cathode of the charged particle source 202 is given. The number of BSE and SE can be more or less (or even the same) than the injected electrons of the primary charged particle beam 210.

[0082] Images generated by SEM can be used for defect inspection. For example, a generated image capturing a test equipment area of ​​a wafer can be compared with a reference image capturing the same test equipment area. The reference image can be predetermined (e.g., by simulation) and does not include known defects. If the difference between the generated image and the reference image exceeds a tolerance level, a potential defect can be identified. As another example, SEM can scan multiple areas of a wafer, each including a test equipment area designed identically, and generate multiple images capturing these manufactured test equipment areas. These multiple images can be compared with each other. If the differences between the multiple images exceed a tolerance level, a potential defect can be identified.

[0083] Figure 3A A schematic diagram of an exemplary structure of detector 300A according to an embodiment of the present disclosure is illustrated. Detector 300A can be provided as a charged particle detection device 244. Figure 3A In this design, detector 300A includes a sensor layer 301, a segment layer 302, and a readout layer 303. Sensor layer 301 may include a sensor die comprising multiple sensing elements (including sensing elements 311, 312, 313, and 314). In some embodiments, multiple sensing elements may be provided in an array of sensing elements, each of which may have a uniform size, shape, and arrangement. Detector 300A may have an arrangement relative to a coordinate axis reference system. Sensor layer 301 may be arranged along the xy-plane. The sensing elements in sensor layer 301 may be arranged in the x-axis and y-axis directions. The x-axis direction may also be referred to herein as the "horizontal" direction. The y-axis direction may also be referred to herein as the "vertical" direction. Detector 300A may have a layered structure in which sensor layer 301, segment layer 302, and segment layer are stacked in the z-axis direction. The z-axis direction may also be referred to herein as the "thickness" direction. The z-axis direction may be aligned with the incident direction of charged particles directed to detector 300A.

[0084] Segment layer 302 may include multiple segments, including segments 321, 322, 323, and 324. These segments may include interconnects (e.g., wiring paths) configured to communicatively couple multiple sensing elements. These segments may also include switching elements that control the communicative coupling between the sensing elements. These segments may also include connection mechanisms (e.g., wiring paths and switching elements) between the sensing elements and one or more common nodes in the segment layer. For example, as... Figure 3AAs shown, segment 323 can be configured to communicatively couple to the outputs of sensing elements 311, 312, 313, and 314, as indicated by the four dashed lines between sensor layer 301 and segment layer 302. In some embodiments, segment 323 can be configured to output a combined signal collected from sensing elements 311, 312, 313, and 314 as a common output. In some embodiments, the segment (e.g., segment 323) can be communicatively coupled to sensing elements (e.g., sensing elements 311, 312, 313, and 314) placed directly above the segment. For example, segment 323 can have a grid of terminals configured to connect to the outputs of sensing elements 311, 312, 313, and 314. In some embodiments, segments 321, 322, 323, and 324 can be provided in an array structure, such that they have a uniform size and shape and a uniform arrangement. For example, segments 321, 322, 323, and 324 can be square. In some embodiments, isolation zones may be provided between adjacent segments to electrically insulate them from each other. In some embodiments, the segments may be arranged with an offset pattern (such as a tile layout).

[0085] The readout layer 303 may include signal processing circuitry for processing the output of the sensing element. In some embodiments, signal processing circuitry may be provided, corresponding to each segment in the segment layer 302. In some embodiments, a plurality of separate signal processing circuitry system segments (including signal processing circuitry system segments 331, 332, 333, and 334) may be provided. In some embodiments, the signal processing circuitry system segments may be provided as an array of segments having uniform size and shape and uniform arrangement. In some embodiments, the signal processing circuitry system segments may be configured to connect to the output of a corresponding segment from the segment layer 302. For example, as... Figure 3A As shown, signal processing circuit system segment 333 can be configured to communicatively couple to the output of segment 323, as indicated by the dashed line between segment layer 302 and readout layer 303.

[0086] In some embodiments, the readout layer 303 may include input terminals and output terminals. The outputs of the readout layer 303 may be connected to components for reading and interpreting the outputs of the detector 300A. For example, the readout layer 303 may be directly connected to a digital multiplexer, a digital logic block, a controller, a computer, etc.

[0087] The size of the segment and the number of sensing elements associated with the segment can vary. For example, although Figure 3A Four sensing elements are illustrated in one section, but the embodiments of this disclosure are not limited thereto.

[0088] although Figure 3A The sensor layer 301, segment layer 302, and readout layer 303 are illustrated as multiple discrete layers; however, it should be noted that the sensor layer 301, segment layer 302, and readout layer 303 do not need to be provided as separate substrates. For example, the wiring paths of segment layer 302 can be disposed within a sensor die including multiple sensing elements, or they can be disposed outside the sensor die. The wiring paths can be patterned on sensor layer 301. Furthermore, segment layer 302 can be combined with readout layer 303. For example, a semiconductor die including the wiring paths of segment layer 302 and the signal processing circuitry of readout layer 303 can be provided. Therefore, the structures and functions of the individual layers can be combined or divided.

[0089] In some embodiments, the detector may be provided in a dual-die configuration. However, embodiments of this disclosure are not limited thereto. For example, the functionality of the sensor layer, segment layer, and readout layer may be implemented in a single die or in a package that may contain one or more dies.

[0090] In some embodiments, the sensor layer 301, segment layer 302, and readout layer 303 may be arranged in a stacked relationship corresponding to each other. For example, segment layer 302 may be mounted directly on top of readout layer 303, and sensor layer 301 may be mounted directly on top of segment layer 302. These layers may be stacked such that segments within segment layer 302 are aligned with signal processing circuitry segments (e.g., segments 331, 332, 333, and 334) of readout layer 303. Furthermore, these layers may be stacked such that one or more sensing elements within sensor layer 301 are aligned with segments in segment layer 302. In some embodiments, sensing elements to be associated with a segment may be included within that segment. For example, in a plan view of detector 300A, sensing elements (e.g., sensing elements 311, 312, 313, and 314) of a segment (e.g., segment 323) may be placed within the boundary of that segment. Furthermore, each segment of segment layer 302 can overlap with the signal processing circuitry segment of readout layer 303. In this way, predefined regions can be established for associating sensing elements with segments and signal processing circuitry systems.

[0091] Figure 3B An exemplary structure of a sensor surface 300B according to an embodiment of the present disclosure is illustrated. This sensor surface can form the surface of a charged particle detection device 244. The sensor surface 300B can be provided with multiple segments of sensing elements, including segments 340, 350, 360, and 370, indicated by dashed lines. For example, the sensor surface 300B can be... Figure 3A The surface of sensor layer 301 in the wafer. Each segment may be able to receive at least a portion of a beam emitted from a specific location on wafer 230, such as Figure 2 One of the secondary charged particle beams 236, 238 and 240 shown.

[0092] Sensor surface 300B may include an array of sensing elements, including sensing elements 315, 316, and 317. In some embodiments, each of segments 340, 350, 360, and 370 may include one or more sensing elements. For example, segment 340 may include a first plurality of sensing elements, and segment 350 may include a second plurality of sensing elements, and so on. The first plurality of sensing elements and the second plurality of sensing elements may be mutually exclusive. In some embodiments, the sensing element may be a diode or any diode-like device that converts incident energy into a measurable signal. For example, the sensing element may include a PIN diode, an avalanche diode, an electron multiplier tube (EMT), or other components.

[0093] exist Figure 3B In this embodiment, a region 380 may be provided between adjacent sensing elements. Region 380 may be an isolation region to isolate the sides or corners of adjacent sensing elements from each other. In some embodiments, region 380 may include an insulating material different from the sensing element on sensor surface 300B. In some embodiments, region 380 may be square. In some embodiments, region 380 may not be provided between adjacent sides of the sensing elements.

[0094] In some embodiments, the field-programmable detector array may be provided with sensing elements having switching regions integrated between the sensing elements. For example, detectors such as some of the examples discussed in PCT application No. PCT / EP2018 / 074833, filed September 14, 2018, the contents of which are incorporated herein by reference in their entirety. In some embodiments, switching regions may be provided between the sensing elements such that some or more sensing elements may be grouped together when covered by the same charged particle beam spot. Circuitry for controlling the switching regions may be included in the readout layer (e.g., Figure 3A In the signal processing circuit of the readout layer 303). As used throughout this disclosure, the expression "set of sensing elements" will mean a group of a first number of sensing elements. A first set of sensing elements in the set of sensing elements may refer to a subset of the sensing elements in that set. A second set of sensing elements may refer to another subset of the sensing elements in that set. The first set and the second set may be mutually exclusive or not mutually exclusive. A "group" of sensing elements may refer to sensing elements associated with a beam spot projected onto the surface of the detector (e.g., within the boundary of the beam spot). The first set of sensing elements and the second set of sensing elements may refer to different groups of sensing elements associated with different beam spots. The set of sensing elements is not necessarily limited to a specific "segment" of the detector.

[0095] Figure 4 This is a diagram illustrating an exemplary detector array 400 with switching elements according to an embodiment of the present disclosure. The detector array 400 may be... Figure 3A An example embodiment of detector 300A is shown. For example, detector array 400 may include a sensor layer (e.g., similar to...). Figure 3A In the sensor layer 301), the segment layer (e.g., similar to...) Figure 3A The segment layer 302), and the readout layer (e.g., similar to the section ...). Figure 3A (Readout layer 303 in the detector array 400). The sensor layer of the detector array 400 may include a plurality of sensing elements, including sensing elements 311, 312, 313, and 314. In some embodiments, each sensing element in the detector array 400 may have a uniform size, shape, and arrangement. The sensing elements of the detector array 400 may generate a current signal commensurate with the charged particles (e.g., emitted electrons) received in the active region of the sensing element. The term "active region" herein may refer to a region where the radiation sensitivity of the sensing element is above a predetermined threshold.

[0096] The segment layer of the detector array 400 may include a base substrate (e.g., a semiconductor substrate) containing one or more wiring paths 402. Figure 4 (Not shown in the diagram). Wiring path 402 can be configured to communicatively couple the sensing elements of detector array 400. (e.g.) Figure 4 As shown, the detector array 400 includes a segment 321 with 4×4 sensing elements, which includes sensing elements 311, 312, 313, and 314. Figure 4 In this configuration, the segment layer of detector array 400 may include inter-element switching elements between any two adjacent sensing elements. The segment layer of detector array 400 may also include inter-element switching elements communicatively coupled to the edges of adjacent sensing elements. Wiring path 402 may be configured to communicatively couple to the outputs of sensing elements (e.g., sensing elements 311, 312, 313, and 314) in segment 321. For example, wiring path 402 may have a grid of terminals (shown as circular black dots at the center of the sensing elements) configured to connect to the outputs of sensing elements 311, 312, 313, and 314. In some embodiments, wiring path 402 may be provided within the segment layer of detector array 400. Figure 4 In this configuration, wiring path 402 is communicatively coupled to the aforementioned sensing elements (e.g., sensing elements 311, 312, 313, and 314). Figure 4In this configuration, a component bus switch element may be provided between the output of the sensing element and the wiring path 402. In some embodiments, the component bus switch element may be disposed in a segment layer of the detector array 400.

[0097] In some embodiments, wiring path 402 may include conductive material lines, flexible wires, bonding wires, etc., printed on a substrate. In some embodiments, switching elements may be provided such that the outputs of individual sensing elements can be connected to or disconnected from the common output of segment 321. In some embodiments, the segment layers of detector array 400 may also include corresponding circuitry for controlling the switching elements. In some embodiments, switching elements may be provided in a separate switching element matrix, which itself may contain circuitry for controlling the switching elements.

[0098] The readout layer of the detector array 400 may include signal conditioning circuitry for processing the output of the sensing elements. In some embodiments, the signal conditioning circuitry may convert the generated current signal into a voltage that can represent the intensity of the received beam spot, or it may amplify the generated current signal into an amplified current signal. The signal conditioning circuitry may include, for example, an amplifier 404 and one or more analog switching elements (…). Figure 4 (Not shown in the image). Amplifier 404 can be a high-speed transimpedance amplifier, current amplifier, etc. Figure 4 In this configuration, amplifier 404 can be communicatively coupled to the common output of segment 321 for amplifying the output signal of the sensing element of segment 321. In some embodiments, amplifier 404 can be a single-stage or multi-stage amplifier. For example, if amplifier 404 is a multi-stage amplifier, it can include preamplifiers and post-amplifiers, or include front-end stages and post-amplifier stages, etc. In some embodiments, amplifier 404 can be a variable gain amplifier, such as a variable gain transimpedance amplifier (VGTIA), a variable gain charge transfer amplifier (VGCTA), etc. Adjustment circuitry can be coupled to a signal path, which may include, for example, an analog-to-digital converter (ADC) 406. Figure 4 In this configuration, ADC 406 can be communicatively coupled to the output of a conditioning circuit (e.g., including amplifier 404) to convert the analog output signal of the sensing element in segment 321 into a digital signal. The readout layer of detector array 400 may also include other circuitry for other functions. For example, the readout layer of detector array 400 may include switching element actuation circuitry that controls switching elements between sensing elements. For ease of explanation and without ambiguity, the signal path between the sensing element and ADC 406 may be referred to as the "analog signal path." For example, Figure 4The analog signal path includes the aforementioned signal conditioning circuitry (e.g., amplifier 404). The input of the analog signal path is communicatively coupled to a sensing element, and the output of the analog signal path is communicatively coupled to an ADC 406.

[0099] In some embodiments, the ADC 406 may include an output terminal communicatively coupled to components for reading and interpreting the digital signal converted by the ADC 406 (e.g., components inside or outside the readout layer of the detector array 400). Figure 4 In this configuration, ADC 406 is communicatively coupled to digital multiplexer 408. In some embodiments, digital multiplexer 408 may be arranged in the readout layer of detector array 400. Digital multiplexer 408 can receive multiple input signals and convert them into output signals. The output signal of digital multiplexer 408 can be converted back into multiple input signals. The output signal of digital multiplexer 408 can also be transmitted to a data processing stage (e.g., ...). Figure 2 Image processing system 290 (in the image processing system).

[0100] Figure 5 This is a cross-sectional view illustrating the layer structure of a detector 500 according to an embodiment of the present disclosure. The detector 500 can be used as... Figure 2 The charged particle detection device 244 in the illustrated charged particle beam tool 104 is provided. The detector 500 can be configured to have multiple layers stacked in a thickness direction substantially parallel to the incident direction of the charged particle beam. In some embodiments, the detector 500 may be provided as some of the examples discussed in PCT application No. PCT / EP2018 / 074834, filed September 14, 2018, the contents of which are incorporated herein by reference in their entirety.

[0101] exist Figure 5 In this configuration, detector 500 may include a sensor layer 510 and a circuit layer 520. In some embodiments, sensor layer 510 may represent... Figure 3A The sensor layer 301 and the circuit layer 520 can represent Figure 3A The section layer 302 and readout layer 303 are located in the sensor layer 510. For example, the circuit layer 520 may include interconnects (e.g., metal wires) and various electronic circuit components. As another example, the circuit layer 520 may include a processing system. The circuit layer 520 may also be configured to receive an output current detected in the sensor layer 510. In some embodiments, the sensor layer 510 may represent... Figure 3A The sensor layer 301 and segment layer 302, and the circuit layer 520 can represent Figure 3AThe readout layer 303 is located in the sensor layer 301, the segment layer 302, and the readout layer 303. In some embodiments, the detector 500 may include layers other than the sensor layer 301, the segment layer 302, and the readout layer 303.

[0102] In some embodiments, the sensor layer 510 may be provided with a sensor surface 501 for receiving incident charged particles. Sensing elements (including sensing elements 511, 512, and 513 (distinguished by dashed lines)) may be provided in the sensor layer 510. For example, the sensor surface 501 may be similar to... Figure 3B The sensor surface 300B is located within this area. Figure 5 In this configuration, switching elements 519 and 521 can be arranged horizontally between adjacent sensing elements in a cross-sectional view. Switching elements 519 and 521 can be embedded in the sensor layer 510. In some embodiments, sensing elements 511, 512, and 513 can be [missing information - likely related to sensor layer 510]. Figure 4 The detector array 400 contains sensing elements (e.g., sensing elements 311, 312, 313, and 314), and switching elements 519 and 521 may be in... Figure 4 The detector array 400 is among the switching elements between the sensing elements.

[0103] In some embodiments, sensing elements 511, 512, and 513 can be separated by an isolation region (indicated by dashed lines) extending in the thickness direction. For example, the sides of sensing elements 511, 512, and 513 parallel to the thickness direction can be separated by the isolation region (e.g., Figure 3B The regions 380 in the middle are isolated from each other.

[0104] In some embodiments, the sensor layer 510 may be configured as one or more diodes, wherein sensing elements 511, 512, and 513 are similar to... Figure 3B Sensing elements 315, 316, and 317. Switching elements 519 and 521 may be configured as transistors (e.g., MOSFETs). Each of sensing elements 511, 512, and 513 may include an output for electrical connection to circuitry layer 520. For example, the output may be integrated with switching elements 519 and 521, or it may be provided separately. In some embodiments, the output may be integrated into the bottom layer (e.g., a metal layer) of sensor layer 510.

[0105] although Figure 5Sensing elements 511, 512, and 513 are depicted as discrete units when viewed in cross-section, but such division may not actually be physical. For example, the sensing elements of detector 500 may be formed from a semiconductor device constituting a PIN diode device, which may be fabricated as a substrate having multiple layers including P-type, intrinsic, and N-type regions. In this example, sensing elements 511, 512, and 513 may be continuous in a cross-sectional view. In some embodiments, switching elements (e.g., switching elements 519 and 521) may be integrated with the sensing elements.

[0106] In some embodiments, the switching element may be integrated within the sensor layer, within other layers, or may be partially or wholly disposed within existing layers. For example, in some embodiments, the sensor layer may include wells, trenches, or other structures in which the switching element is formed.

[0107] In some embodiments, the switching elements of the detector 500 (e.g., switching elements 519 and 521) may be disposed outside the sensor layer 510. For example, the switching elements may be embedded in the circuit layer 520. Figure 5 (Not shown in the image). In some embodiments, the switching elements of detector 500 (e.g., switching elements 519 and 521) may be formed in a separate die (e.g., a switching die). For example, the switching die ( Figure 5 (Not shown) can be sandwiched between sensor layer 510 and circuit layer 520, and can be communicatively connected to sensor layer 510 and circuit layer 520.

[0108] Figure 6 This is a cross-sectional view illustrating the sensing element 512 of a detector 500 according to an embodiment of the present disclosure. Figure 6 In this process, sensing element 512 may include P-wells and N-wells for forming switching elements and other active or passive elements that can be communicatively coupled to other components of sensor layer 510 or circuit layer 520. Although Figure 6 Only one complete sensing element 512 is shown, but it should be understood that the sensor layer 510 may be composed of multiple sensing elements (e.g., sensing elements 511 and 513) similar to sensing element 512, which may be continuous in cross-sectional view.

[0109] In some embodiments, the sensing element 512 may include a diode device having a surface layer 601, a P-type region 610, a P-epitaxial region 620, an N-type region 630, and other components. The surface layer 601 may form a detection surface (e.g., an active region) of a detector that receives incident charged particles. For example, the surface layer 601 may be a metal layer (e.g., formed of aluminum or other conductive materials). On the opposite side of the surface layer 601, an electrode 650 may be provided as a charge collector. The electrode 650 may be configured to output a current signal representing the number of charged particles received in the active region of the sensing element 512.

[0110] In some embodiments, such as Figure 6 As shown, switching elements 519 and 521 can be formed of metal-oxide-semiconductor (MOS) devices. For example, multiple MOS devices can be formed in... Figure 6 In the back side of the N-type region 630, and the back side of the N-type region 630 can be with Figure 5 The sensor layer 510 is contacted. As an example of a MOS device, a deep P-well 641, an N-well 642, and a P-well 643 may be provided. In some embodiments, the MOS device can be fabricated by etching, patterning, and other processes and techniques. It should be understood that various other devices (such as bipolar semiconductor devices) can be used, and the device can be fabricated by various processes.

[0111] In the operation of sensing element 512, when charged particles (e.g., Figure 2 When the secondary charged particle beams (236, 238, and 240) strike the surface layer 601, the body of the sensing element 512 (including, for example, a depletion region) may be diffused by charge carriers generated from the striking charged particles. This depletion region may extend through at least a portion of the volume of the sensing element. For example, the charged particles may be electrons, and striking electrons may generate and excite electron-hole pairs in the depletion region of the sensing element. The electrons excited in the electron-hole pairs may have further energy, allowing them to also generate new electron-hole pairs. The electrons generated from the striking charged particles may contribute to the signal generated in each sensing element.

[0112] refer to Figure 6The depletion region in sensing element 512 may include an electric field between P-type region 610 and N-type region 630, and electrons and holes may be attracted by P-type region 610 and N-type region 630, respectively. A detection signal may be generated when an electron reaches P-type region 610 or when a hole reaches N-type region 630. Therefore, when a charged particle beam is incident on sensing element 512, sensing element 512 may generate an output signal, such as current. Multiple sensing elements may be connected, and a group of sensing elements may be used to detect the intensity of the charged particle beam spot. When the charged particle beam spot covers multiple adjacent sensing elements (e.g., sensing elements 511, 512, and 513), the sensing elements may be grouped together (“merged”) for current collection. For example, sensing elements may be merged by turning on switching elements (e.g., switching elements 519 and 521) between the sensing elements. Signals from the sensing elements in the group may be collected and sent to a signal conditioning circuit connected to the group. The number of sensing elements in the group may be any number related to the size and shape of the beam spot. This number can be 1 or greater than 1.

[0113] In some embodiments, the detector can be configured such that the individual sensing elements can communicate with external components via, for example, signal or data lines and address signals. The detector can be configured to actuate switching elements such that two or more sensing elements can be combined, and their output currents or voltages can be combined. Figures 5 to 6 As can be seen, by utilizing the switching element design between sensing elements, the sensing elements can operate in areas without physical isolation (e.g., Figure 3B In the case of region 380), it is set. Therefore, when the sensing element 512 is activated, all regions below the surface layer 601 can become active. When no physical isolation region is set between adjacent sensing elements, the dead zone between them can be minimized or eliminated.

[0114] Figure 7 This is a diagram illustrating an exemplary cross-sectional arrangement of a detector 700 according to an embodiment of the present disclosure. For example, the detector 700 may be... Figure 3A Detector 300A in Figure 4 Detector array 400 or Figure 5 An embodiment of detector 500. For example... Figure 7 As shown, detector 700 may include a plurality of sensing elements, including sensing elements 701, 702, 703, 704, 705, and 706. In some embodiments, the plurality of sensing elements may be part of a sensor layer, which may be formed Figure 2 The detection surface of the charged particle detection device 244 in the middle (e.g., Figure 3BThe sensor layer may include switching elements (e.g., similar to the sensor surface 300B) between adjacent sensing elements. Figure 6 The switching elements 519 and 521 in the figure include inter-element switching elements 711, 712 and 713. In some embodiments, when turned on, the switching elements can be configured to group two or more adjacent sensing elements together.

[0115] exist Figure 7 In this context, detector 700 may include multiple segments (e.g., similar to...). Figure 3A Sections 321, 322, 323, and 324 in the document. Each section may include one or more sensing elements and wiring paths between sensing elements (e.g., similar to...). Figure 4 The wiring path (402) and the common output. In some embodiments, the wiring path may include a common wiring or a shared signal path. For example, such as... Figure 7 As shown, wiring path 721 can be communicatively connected to sensing elements 701, 702, and 703, and connected to a common output 728. Wiring path 721, sensing elements 701 to 703, and common output 728 may belong to a first segment. Wiring path 722 can be communicatively connected to sensing elements 704, 705, and 706, and connected to a common output 729. Wiring path 722, sensing elements 704 to 706, and common output 729 may belong to a second segment. The output (e.g., output 719) of a sensing element (e.g., sensing element 706) can be communicatively coupled to the corresponding wiring path (e.g., wiring path 722) via a component-bus switching element (e.g., component-bus switching element 720). In some embodiments, component-bus switching element 720 may use a similar... Figure 6 The switching elements 519 and 521 described herein are implemented using the techniques described herein. In some embodiments, when the sensing element 706 is inactive, the element-bus switching element 720 may be disconnected to reduce noise, parasitic capacitance, or other technical effects from the sensing element 706.

[0116] exist Figure 7 In this configuration, these sections (e.g., a first section including sensing elements 701 to 703 or a second section including sensing elements 704 to 706) can be configured to output electrical signals to signal processing circuitry and other circuitry elements. For example, wiring path 722 can output electrical signals to signal processing circuitry system 730 via common output 729.

[0117] The signal processing circuit system 730 may include one or more signal processing circuits for processing electrical signals output from wiring path 722. For example, the signal processing circuit system 730 may include a preamplifier 731, a postamplifier 732, and a data converter 733. For example, the preamplifier 731 may be a transimpedance amplifier (TIA), a charge transfer amplifier (CTA), a current amplifier, etc. The postamplifier 732 may be a variable gain amplifier (VGA), etc. The data converter 733 may be an analog-to-digital converter (ADC) that converts analog voltage or analog current into digital values. In some embodiments, the preamplifier 731 and the postamplifier 732 may be combined into a single amplifier (e.g., Figure 4 The amplifier 404 in the middle, and the data converter 733 may include Figure 4 The ADC 406 in the middle.

[0118] Detector 700 may include digital switch 740. In some embodiments, digital switch 740 may include a matrix of switching elements. In some embodiments, digital switch 740 may include a multiplexer (e.g., Figure 4 (Digital multiplexer 408 in the example). For example, the multiplexer can be configured to receive a first number of inputs and generate a second number of outputs, wherein the first number and the second number can be the same or different. The first number may correspond to parameters of detector 700 (e.g., the total number of segments), and the second number may correspond to... Figures 1 to 2 The parameters of the beam tool 104 (e.g., from...) Figure 2 The number of sub-beams generated by the charged particle source 202 in the [context missing]. The digital switch 740 can communicate with external components via data lines(multiple) and address signals(multiple). In some embodiments, the digital switch 740 can control data reading / writing. The digital switch 740 may also include a circuit system for controlling inter-element switching elements (e.g., inter-element switching elements 711, 712, and 713). Figure 7 In this embodiment, the digital switch 740 can generate output signals via multiple data channels (including data channels 751, 752, and 753). In some embodiments, the data channels of the digital switch 740 can be further connected to other components (e.g., relays, etc.). Therefore, multiple segments of the detector 700 can be used as independent data channels for detector signals.

[0119] It should be noted that various components can be inserted into Figure 7 At different levels in the representation. In some embodiments, one or more of the above-described components of detector 700 may be omitted. In some embodiments, additional circuitry may be provided for other functions. For example, a switching element actuation circuit may be provided ( Figure 7(Not shown) to control inter-element switching elements (e.g., inter-element switching elements 711, 712, and 713) for connecting sensing elements. In some embodiments, an analog output line ( Figure 7 (Not shown in the image), this analog output line can be read by an analog path. For example, the analog output line can be parallel to the data converter 733 to receive the output of the post-amplifier 732. In another example, the analog output line can replace the data converter 733.

[0120] Figure 8 This is a diagram illustrating another exemplary cross-sectional arrangement of detector 800 according to an embodiment of the present disclosure. Detector 800 may be similar to detector 700, except that sensing elements associated with a segment (e.g., sensing elements 704, 705, and 706) may be communicatively coupled to an associated wiring path (e.g., wiring path 722) via a common wiring path (e.g., common wiring path 819) and a common switching element (e.g., common switching element 820). In some embodiments, common switching element 820 may use a similar... Figure 6 The switching elements 519 and 521 described herein are implemented using techniques. For example, as... Figure 8 As shown, if a beam of charged particles is incident on sensing elements 704, 705, and 706, sensing elements 704, 705, and 706 can generate detection signals. Sensing element 705 can directly output its detection signal to a common wiring path 819. Sensing elements 704 and 706 can route their detection signals to sensing element 705 via inter-element switching elements 712 and 713, respectively, and these detection signals can be further routed to the common wiring path 819 via sensing element 705. This design simplifies detector manufacturing. In comparison, designs using multiple wiring paths and switching elements between sensing elements and segments (e.g., Figure 7 The design of detector 700 in the section can provide configuration flexibility to the sensing element group because the output of a segment is not fixed to any particular sensing element in that segment (e.g., Figure 8 At the sensing element 705 in the middle. Furthermore, such as Figure 7 The design of the detector 700 in the model enhances the simplicity of reading the output of each sensing element. To obtain the beam projection of the secondary electron beam, it may be advantageous to read the output of each sensing element so that an image of the projected pattern can be acquired.

[0121] Figure 9 This is a diagram illustrating a detection system 900 according to an embodiment of the present disclosure. In some embodiments, the detection system 900 may be... Figure 2 An embodiment of the detection device 244 in the system. The detection system 900 may include a sensing element 902 (e.g., similar to...). Figures 3A to 8The sensing element described herein) and the processing circuitry 940 (e.g., similar to...) Figures 7 to 8 The signal processing circuitry system 730 in the system. The processing circuitry 940 can be communicatively coupled to the digital interface 950 (e.g., similar to...). Figures 7 to 8 (Digital switch 740 in the middle). Sensing element 902 can form a sensor surface (e.g., Figure 3B The sensor surface (300B) can be divided into segments (e.g., similar to...). Figures 3A to 3B or Figures 7 to 8 The processing circuit 940 may include a first processing circuit array 910 (e.g., including the section described herein) for processing the output of the sensing element 902. Figures 7 to 8 The preamplifier 731 in the middle), and the second processing circuit array 920 for providing gain and bias control (e.g., including...) Figures 7 to 8 The post-amplifier 732 in the image), and the ADC array 930 for converting analog signals into digital signals (e.g., including...) Figures 7 to 8 (Data converter 733 in the middle). The first processing circuit array 910 and the second processing circuit array 920 can form the signal conditioning circuit in the processing circuit 940. Each segment of the processing circuit 940 can be communicatively coupled to a segment of the sensing element 902, which can be ordered and communicatively coupled to the units of the first processing circuit array 910, the units of the second processing circuit array 920, and the units of the ADC array 930, forming a signal path (e.g., signal path 960). This signal path can receive the output signal from the segment of the sensing element 902 and generate a charged particle detection current representing the intensity of at least a portion of the charged particle beam spot formed on the segment of the sensing element 902. The charged particle detection data can be output to the digital interface 950. Figure 9 In the process, signal path 960 includes analog signal path 970, which includes units of the first processing circuit array 910 and units of the second processing circuit array 920.

[0122] Digital interface 950 may include controller 904. Controller 904 can communicate with ADC array 930, second processing circuit array 920, and sensing element 902. Digital interface 950 can also send and receive data from deflection and image control unit via, for example, a transceiver. Figure 9 Communication (not shown). The transceiver may include a transmitter 906 and a receiver 908. In some embodiments, the controller 904 may control the image signal processing of the detection system 900.

[0123] Further improvements, such as references Figures 3A to 9Several challenges exist regarding the performance, capabilities, and adaptability of the described detector. These challenges may typically relate to one or more of the following: processing bandwidth (representing how many signals (e.g., analog or digital signals) the detector can process in parallel); digital signal bandwidth (representing the maximum speed of data communication and the processing power of the digital system); analog signal bandwidth (representing the detector's detection capability and the fineness of the inspection results); and pixel rate (representing how quickly the detector can process digital signals).

[0124] The analog signal bandwidth of the detector may be limited by parasitic parameters. For example, when an impact occurs on the sensor surface of the detection device (e.g., detection device 244), (e.g., Figure 3B The beam (e.g., on the sensor surface 300B) in the sensor (e.g., Figure 2 When the secondary charged particle beam (236, 238, or 240) has an extremely large beam spot size, the detection device has a large number of sensing elements (e.g., such as...) Figures 3A to 8 The sensing element described herein may involve detecting a beam. In some cases, if the beam strikes multiple segments on the sensor surface, these segments (e.g., such as...) Figures 3A to 3B or Figures 7 to 8 The sensing elements (of the section described herein) can be involved in the detection beam. As another example, when sensing elements are hardwired together in a detection device, all hardwired sensing elements can be activated for detection even when the beam strikes only one sensing element on the sensor surface. However, the more components involved in the detection beam, the more parasitic parameters (e.g., stray capacitance) may be introduced into the signal conditioning circuitry, which can significantly reduce the analog signal path of the detection device (e.g., ...). Figure 9 The analog signal bandwidth of the amplifier (analog signal path 970) is also considered. In some cases, when multiple sensing elements are involved for detection, the stray capacitance associated with the interconnects (e.g., switching elements) between the sensing elements and the inputs of the signal conditioning circuit can be large, which may reduce the analog signal bandwidth of the amplifier. Furthermore, this significant reduction in analog signal bandwidth may degrade imaging performance. For example, blurred images may be produced, and the detector may fail to meet the requirements of high pixel rates.

[0125] In some applications, the detector's data processing bandwidth may be limited by the detector's component capabilities or circuit design. Many existing detection devices may have only one ADC in each signal path, which may not meet the requirements of some applications. For example, some applications involve high-density beams, which may not require high pixel rates for data processing. In this case, the detection device may need a large number of signal paths for a small area. However, even if a high data rate ADC is not required to detect high-density beams, the signal paths of the detection device may easily be exhausted. As another example, some applications involve large spot beams, each of which may generate a large number of detection signals and may require high pixel rates for data processing. In these cases, the detection device may need high data rate ADCs for its signal paths and high-bandwidth data channels. To provide a high pixel rate for each large spot beam, the detection device may use multiple signal paths for the large spot beam. However, in this case, the signal paths of the detection device may still be easily exhausted, and even if the signal paths are sufficient, the data processing bandwidth of the data channels may still be easily exhausted due to the large amount of data. As another example, some applications involve low-density beams, but each beam requires a high pixel rate for detection. In these cases, the detection equipment may require a high pixel rate ADC, which could lead to higher design and manufacturing costs. In some applications, some or all of the challenges mentioned above may coexist. Existing designs of detection equipment may lack the adaptability to address these challenges.

[0126] The pixel rate of a detector can be limited by many factors, including analog signal bandwidth and the specifications of the detector's components. For example, the ADC in the readout circuit may have a maximum sampling rate that may not support the required pixel rate. Upgrading limiting components to more advanced ones can incur significant costs in research, development, and manufacturing. Therefore, efforts have long been focused on low-cost solutions to improve the pixel rate of detectors.

[0127] The performance adaptability of a detector may be limited by unidirectional optimization. The design of the detector (e.g., Figure 3A The sensor layer 301, segment layer 302, and readout layer 303 in the detector can be optimized for some applications, but such optimizations may reduce the performance of the detector in some other applications.

[0128] This disclosure provides an exemplary architecture for detector arrays that can help alleviate some or all of the problems described above. Figure 10 This is a diagram illustrating a detector array 1000 with an exemplary architecture according to an embodiment of the present disclosure. Figure 10 The architecture can be used for single-beam inspection tools or multi-beam inspection tools (e.g., Figure 2(Beam tool 104 in the image). Detector array 1000 may include [missing information - likely related to a specific component or component]. Figure 4 Similar components to the detector array 400 include segment 321, sensing elements 311, 312, 313 and 314, wiring path 402, and digital multiplexer 408. Similar to... Figure 4 The detector array 1000 may include multiple segments, which include Figure 10 Segment 1002 in the array. Segment 1002 may be similar to segment 321 and includes 4×4 sensing elements (including sensing elements 311, 312, 313, and 314). The detector array 1000 also includes an analog signal path 1004 associated with segment 1002, which begins at the output of segment 1002 and ends at the input of interconnect layer 1006. Analog signal path 1004 includes amplifier 1022. In some embodiments, similar to Figure 9 Analog signal paths 970 and 1004 may additionally or alternatively include other components. For example... Figure 10 As shown, segment 1002 is associated with analog signal path 1004 (including amplifier 1022) and ADC 1024, thereby allowing the detection signal generated by the sensing element of segment 1002 to be processed by analog signal path 1004 and ADC 1024 and output to digital multiplexer 408. Digital multiplexer 408 can receive the outputs of different ADCs associated with different segments of detector array 1000.

[0129] The detector array 1000 includes an interconnect layer 1006 that communicatively couples the outputs of the signal processing circuitry system to each other. The signal processing circuitry system may include analog signal paths (including analog signal path 1004). Figure 10 As shown, interconnect layer 1006 includes interconnect switching elements that are communicatively coupled to the outputs of analog signal paths of detector array 1000. For example, interconnect switching elements 1014, 1016, 1018, and 1020 can communicatively couple the outputs of adjacent analog signal paths (including analog signal path 1004).

[0130] exist Figure 10In this configuration, switching element 1008 can communicatively couple the output of segment 1002 to the input of analog signal path 1004. Switching element 1010 can communicatively couple the output of analog signal path 1004 to the input of interconnect layer 1006 (e.g., input / output point 1026 or "I / O point" 1026). If analog signal path 1004 is not selected, switching elements 1008 and 1010 can be configured to be communicatively disconnected. For example, a charged particle beam may strike some or all of the sensing elements in segment 1002, but the detection signal of segment 1002 can be redirected to another analog signal path corresponding to another segment of detector array 1000. In this case, analog signal path 1004 may be disconnected due to not being selected. In some embodiments, if the sensing element of segment 1002 is not struck by any charged particles and analog signal path 1004 is not selected (e.g., to process signals from other segments), amplifier 1022 can be disabled to reduce power consumption, in addition to communicatively disconnecting switching elements 1008 and 1010. When switching elements 1008 and 1010 are communicatively disconnected, analog signal path 1004 (including amplifier 1022) can be effectively deactivated from detector array 1000.

[0131] exist Figure 10 In this embodiment, switching element 1012 can communicatively couple the output of interconnect layer 1006 (e.g., I / O point 1026) to the input of ADC 1024. In some embodiments, the output of interconnect layer 1006 can also be an input. For example, I / O point 1026 can function as both an input (communically coupled to the output of analog signal path 1004) and an output (communically coupled to the input of ADC 1024) of interconnect layer 1006. In some embodiments, the output of analog signal path 1004 can be equivalent to I / O point 1026. In some embodiments, the input of ADC 1024 can be equivalent to I / O point 1026. In some embodiments, I / O point 1026 can be implemented as a separate component ( Figure 10 (Not shown in the diagram). When switching element 1012 is communicatively disconnected, ADC 1024 can be communicatively coupled from segment 1002 and to any other segment of ADC 1024 via interconnecting switching elements 1014, 1016, 1018, or 1020. Figure 10(Not shown in the diagram) Effectively deactivated. In some embodiments, if ADC 1024 is not selected, switching element 1012 can be configured to be communicatively disconnected. For example, a signal output from analog signal path 1004 can be redirected to another ADC corresponding to another analog signal path in detector array 1000. In some embodiments, if the sensing element of segment 1002 is not struck by any charged particles, and both analog signal path 1004 and ADC 1024 are not selected (e.g., to process signals from other segments), ADC 1024 can also be disabled to reduce power consumption in addition to communicatively disconnecting switching element 1012.

[0132] In some embodiments, detector array 1000 can route charged particle detection signals in various ways based on factors such as beam size, beam shape, or desired pixel rate. Detector array 1000 can route the detection signals by controlling the connection and disconnection of switching elements between sensing elements, switching elements 1008, 1010, 1012, and interconnecting switching elements 1014, 1016, 1018, 1020. For example, detector array 1000 can route the signal output from segment 1002 (e.g., via switching elements between sensing elements) to another analog signal path different from analog signal path 1004. In another example, detector array 1000 can route the signal from a segment different from segment 1002 to analog signal path 1004 via switching element 1008. In yet another example, detector array 1000 can route the signal output from analog signal path 1004 (e.g., via interconnecting switching elements 1014, 1016, 1018, or 1020) to another ADC different from ADC 1024. In another example, detector array 1000 can route a signal from an analog signal path different from analog signal path 1004 (e.g., via switching element 1012) to ADC 1024. In some embodiments, if segment 1002 does not generate a detection signal, and analog signal path 1004 and ADC 1024 are not selected, and if an analog signal path or ADC of an adjacent segment is selected, the interconnecting switching elements between segment 1002 and adjacent segments (e.g., interconnecting switching elements 1014, 1016, 1018, or 1020) can be communicatively disconnected, which can help reduce crosstalk and parasitic parameters incurred by amplifier 1022 and ADC 1024 when powered on.

[0133] In some embodiments, if the sensing element of segment 1002 (e.g., sensing element 311) is not in use and is not included in any group of sensing elements used to detect any secondary electron beam, it can be communicatively decoupled from wiring path 402 to reduce parasitic parameters (e.g., stray capacitance), which can further contribute to improving the performance of detector array 1000. For example, sensing element 311 can be disconnected from wiring path 402 by communicatively disconnecting the switching elements between sensing element 311 and wiring path 402. When sensing element 311 is disconnected from wiring path 402, all switching elements between sensing element 311 and its neighboring sensing elements can also be communicatively disconnected.

[0134] In some embodiments, interconnect layer 1006, interconnect switching elements 1014, 1016, 1018 and 1020, and switching elements 1008, 1010 and 1012 may be included in the readout layer of detector array 1000 (e.g., similar to...). Figure 3A In the readout layer 303). In some embodiments, interconnecting switch elements 1014 to 1020 and switch elements 1008, 1010, 1012 can use similar methods as shown in the example. Figure 6 The switching elements 519 and 521 described herein are implemented using the techniques described herein.

[0135] In some embodiments, components such as amplifiers (e.g., amplifier 1022) in the analog signal path of detector array 1000 or ADCs (e.g., ADC 1024) at the ends of the signal path of detector array 1000 can be configured to operate in current mode, wherein the inputs and outputs of the amplifier and ADC are currents. In some embodiments, components (e.g., amplifier 1022 or ADC 1024) can be configured to operate in charge mode, wherein the inputs and outputs of the amplifier and ADC are charge signals. Both amplifier 1022 and ADC 1024 can operate in current mode or charge mode, or in a mixed mode. A mixed mode can be a combination of current mode and charge mode. In a mixed mode, the inputs and outputs of the amplifier and ADC can be configured to operate in either current mode or charge mode.

[0136] Compared to amplifiers operating in voltage mode, amplifiers operating in charge mode or current mode may have lower input impedance and higher output impedance. Lower input impedance reduces the amplifier's sensitivity to ambient interference (e.g., interference from adjacent digital components) and its sensitivity to parasitic parameters (e.g., stray capacitance). These benefits can also be achieved in other components besides amplifiers, such as ADCs. With lower input impedance, a component can have high analog signal bandwidth even with some stray capacitance at its input, and hardware-based analog signal processing can be implemented, where the hardware involves interconnects between different signal paths (e.g., interconnect layer 1006). Increased output impedance can facilitate the addition of output signals from different analog signal paths. For example, output signals from different analog signal paths can be added by communicatively connecting the outputs of the analog signal paths at a common point. Current-mode or charge-mode designs for amplifiers and ADCs can reduce the difficulty of designing and implementing hardware-based analog signal processing.

[0137] Figure 11 This is a diagram illustrating an exemplary amplifier 1100 operating in current mode according to an embodiment of the present disclosure. In some embodiments, amplifier 1100 may be amplifier 1022 in detector array 1000. Amplifier 1100 includes controller 1102, first amplifier 1104, and second amplifier 1106. First amplifier 1104 and second amplifier 1106 may be communicatively coupled in series, wherein the output of first amplifier 1104 may be communicatively coupled to the input of second amplifier 1106. The input of first amplifier 1104 may receive signals from sensing elements (e.g., Figure 10 The current signal generated by the sensing element in section 1002 of the amplifier. The output of the second amplifier 1106 can transmit the amplified current signal to the ADC (e.g., Figure 10 (ADC 1024 in the example). Controller 1102 can be communicatively coupled to the first amplifier 1104 and the second amplifier 1106 and control their operation. In some embodiments, the first amplifier 1104 can be a charge transfer amplifier (CTA), a transimpedance amplifier (TIA), or a combination of CTA and TIA (CTIA), which can operate in either TIA or CTA mode. In some embodiments, the second amplifier 1106 can be a transconductance amplifier (TCA). It should be noted that, although in Figure 11Amplifier 1100 is shown as including two amplification stages (i.e., first amplifier 1104 and second amplifier 1106), but it can be implemented with only one amplification stage or with multiple amplification stages. For example, if amplifier 1100 is a single-stage amplifier, it can include a current amplifier whose input and output can both be current. In another example, if amplifier 1100 is a multi-stage amplifier, it can include more amplifiers in addition to first amplifier 1104 and second amplifier 1106. This disclosure does not limit embodiments of amplifier 1100 to the examples described above. In some embodiments, the amplifier can include a two-mode charge transfer and transimpedance amplifier. The amplifier can also include a transconductance amplifier. The amplifier can be configured to receive a current signal and output a charge signal, or vice versa.

[0138] Figure 12 This is a diagram illustrating an exemplary ADC 1200 operating in current mode or charge mode according to an embodiment of the present disclosure. The ADC 1200 may be... Figure 10 The detector array 1000 includes an ADC 1024. In current-mode or charge-mode, the input of the ADC 1200 can be a current signal or a charge signal, and the output of the ADC 1200 can be a current signal or a voltage signal. The ADC 1200 includes a controller 1202, a converter 1204, and a voltage-input ADC 1206. The converter 1204 can be a current-to-voltage (IV) converter or a charge-to-voltage (CV) converter, etc. The converter 1204 and the voltage-input ADC 1206 can be communicatively coupled in series, wherein the output of the converter 1204 can be communicatively coupled to the input of the voltage-input ADC 1206. The input of the converter 1204 can receive a current signal output by the amplifier 1100. The output of the voltage-input ADC 1206 can transmit the digital signal to other processing circuitry (e.g., ...). Figure 10 The digital multiplexer 408 is included. The controller 1202 can be communicatively coupled to the converter 1204 and the voltage-input ADC 1206 and controls the operation of the converter 1204 and the voltage-input ADC 1206. It should be noted that, although in... Figure 12 The ADC 1200 is shown as comprising two stages (i.e., converter 1204 and voltage-input ADC 1206), but it can be implemented with only one stage and still be capable of operating in current-mode or charge-mode. For example, if the ADC 1200 is a single-stage ADC, it can be a charge-redistribution ADC or a charge-sharing ADC. This disclosure does not limit embodiments of the ADC 1200 to the examples described above.

[0139] Figure 13 This indicates that, according to embodiments of the present disclosure, it has Figure 10A diagram illustrating an exemplary segment arrangement of the detector 1300, an exemplary architecture. The detector 1300 may have a similar... Figure 7 The detector 700 comprises components including sensing elements 701, 702, 703, 704, 705, and 706; inter-element switching elements 711, 712, and 713; an output 719; an element-bus switching element 720; wiring paths 721, 722, and 723; common outputs 728 and 729; a digital switch 740; and data channels 751, 752, and 753. In some embodiments, the digital switch 740 may include, for example, Figure 10 The digital multiplexer 408 shown is illustrated.

[0140] exist Figure 13 In a configuration similar to detector array 1000, amplifiers (including amplifiers 1302, 1306, and 1310) of detector 1300 can be communicatively coupled to a segment via switching elements (e.g., switching elements 1314, 1320, and 1326). In some embodiments, the amplifiers can be similar to... Figure 10 Amplifier 1022 or Figure 11 The amplifier 1100 in the example. The switching element can be similar to... Figure 10 The switching element 1008 in the middle.

[0141] exist Figure 13 In this configuration, detector 1300 includes an ADC (including ADCs 1304, 1308, and 1312) and an interconnect layer 1006 (represented by a dashed box), which is arranged between the amplifier and the ADC. The ADC can be similar to... Figure 10 ADC 1024 or Figure 12 The ADC 1200 is described above. The amplifier can be communicatively coupled to the interconnect layer 1006 via switching elements (including switching elements 1316, 1322, and 1328), which can be similar to... Figure 10 The switching element 1010 is included. The interconnect layer 1006 can be communicatively coupled to the ADC via switching elements (including switching elements 1318, 1324, and 1330), which can be similar to... Figure 10 Switching element 1012 in the example. In some embodiments, switching elements 1314 to 1332 and 1340 may use similar devices such as... Figure 6 The switching elements 519 and 521 described herein are implemented using the techniques described herein.

[0142] exist Figure 13 In this configuration, interconnect layer 1006 may include multiple outputs, including I / O points 1334, 1336, and 1338. In some embodiments, I / O points 1334, 1336, and 1338 may be similar to... Figure 10I / O point 1026 in the interconnect layer 1006. In some embodiments, each of the amplifiers of the detector 1300 (e.g., including amplifiers 1302, 1306, and 1310) may be communicatively coupled to the input of the interconnect layer 1006 (e.g., coupled to I / O points 1334, 1336, and 1338, respectively) via switching elements (e.g., via switching elements 1316, 1322, and 1328, respectively). In some embodiments, each of the ADCs of the detector 1300 (e.g., including ADCs 1304, 1308, and 1312) may be communicatively coupled to the output of the interconnect layer 1006 (e.g., coupled to I / O points 1334, 1336, and 1338, respectively) via switching elements (e.g., via switching elements 1318, 1324, and 1330, respectively).

[0143] exist Figure 13 In this layer, interconnect layer 1006 includes interconnect switching elements (e.g., interconnect switching element 1332) communicatively coupled to the output of the amplifier, which may be similar to Figure 10 The interconnecting switching elements 1014, 1016, 1018, and 1020 are used in the interconnecting layer 1006. In some embodiments, the interconnecting switching elements in the interconnecting layer 1006 may use similar elements as shown in the example. Figure 6 The switching elements 519 and 521 described herein are implemented using the techniques described herein.

[0144] In some embodiments, to increase the pixel rate, the ADC of detector 1300 can be configured to operate in interleaved mode. Typically, when the ADC operates in interleaved mode, two or more ADCs can be communicatively coupled to a clock circuit. The clocks of the ADCs can be set to have a predetermined relationship. When operating, the ADCs can alternately sample the input signals (“interleaved”) and generate a combined output signal. The pixel rate of the combined output signal can be higher than the pixel rate achieved by each individual ADC. For example, when m (m is an integer) ADCs are configured to operate in interleaved mode, where each ADC has a pixel rate of n (n is a number) pixels per second, the combined pixel rate of the m ADCs can be m × n pixels per second.

[0145] For example, a clock circuit can be provided in the digital switch 740. Figure 13 (not shown in the image) and control circuit ( Figure 13 (Not shown in the image). Clock control circuitry can be provided in each ADC (including ADC 1304, 1308, and 1312) (e.g., it could be...). Figure 12(This refers to the controller 1202 in the diagram). The clock control circuitry can be communicatively coupled to the clock circuitry and sets different timing offsets for each ADC with reference to the clock signal generated by the clock circuitry. The inputs of the ADCs can be communicatively coupled to each other via switching elements in the interconnect layer 1006, and the control circuitry can control them to operate in interleaved mode. In some embodiments, the amplifier of the detector 1300, which operates in current mode, can provide greater flexibility for the ADC to be configured to operate in interleaved mode.

[0146] In some embodiments, for applications requiring a pixel rate higher than that supported by the maximum sampling rate of the ADC of detector 1300, the ADC can be configured to operate in an interleaved mode. For example, ADCs 1304 and 1308 can have the same maximum sampling rate. When wiring path 721 is activated (e.g., due to charged particle beams striking sensing elements 701 to 703), switching elements 1314 and 1316 can be communicatively connected so that the signal output from wiring path 721 can be processed and amplified by amplifier 1302. Interconnecting switching element 1332 and switching elements 1318 and 1324 can be coordinated to alternately redirect the amplified signal output from amplifier 1302 to ADCs 1304 and 1308. For example, by communicatively connecting switching element 1318 and communicatively disconnecting interconnecting switching elements 1332 and 1324, the amplified signal output from amplifier 1302 can be redirected to ADC 1304. By communicatively disconnecting switch element 1318 and communicatively connecting interconnecting switch elements 1332 and 1324, the amplified signal output from amplifier 1302 can be redirected to ADC 1308. Control and clock circuitry can control the timing of these redirections and the sampling timing for ADCs 1304 and 1308. The combined output signal of ADCs 1304 and 1308 can have an effective sampling rate twice the maximum sampling rate of any single ADC.

[0147] It should be noted that more than two ADCs of detector 1300 may be configured to operate in an interleaved mode in a similar manner, and this disclosure does not limit the embodiments of the interleaved mode to the examples described above. In some embodiments, the communicatively coupled ADCs of detector 1300 operating in interleaved mode may be adjacent to each other or not adjacent to each other. For example, ADCs 1304, 1308, and 1312 may be configured to operate in an interleaved mode, wherein the interconnect switching elements (e.g., including interconnect switching element 1332) and switching elements 1318, 1324, and 1330 of the interconnect layer 1006 between them may be coordinated to alternately direct the amplified signal output from amplifier 1306 to ADCs 1304, 1308, and 1312. For example, by communicatively connecting switch element 1318 and interconnecting switch element 1332 and communicatively disconnecting switch element 1324, switch element 1330, and one or more interconnecting switch elements between ADC 1308 and ADC 1312, the amplified signal output from amplifier 1306 can be redirected to ADC 1304. By communicatively connecting switch element 1324 and communicatively disconnecting switch element 1318, switch element 1330, interconnecting switch element 1332, and one or more interconnecting switch elements between ADC 1308 and ADC 1312, the amplified signal output from amplifier 1306 can be redirected to ADC 1308. By communicatively connecting switch element 1330 and all interconnecting switch elements between ADC 1308 and ADC 1312 and communicatively disconnecting switch element 1318, switch element 1324, and interconnecting switch element 1332, the amplified signal output from amplifier 1306 can be redirected to ADC 1312.

[0148] In some embodiments, when the beam striking detector 1300 has a large beam spot, multiple analog signal paths of detector 1300 can be configured to be communicatively coupled to a single ADC via interconnect layer 1006. For example, analog signals from different analog signal paths can be summed or combined by hardware (e.g., in interconnect layer 1006) before being input to any ADC. The summed analog signals can be converted by a single ADC. Such a design can reduce the required digital output bandwidth and increase configuration flexibility. In contrast, existing detector designs may lack the ability to sum analog signals in hardware before signal digitization (e.g., because analog signal paths do not have the ability to output their signals to ADCs in other signal paths) and may require multiple digital output channels or bandwidth to process signals from the same large beam spot. Compared to existing designs, the design of detector 1300 can provide higher analog signal bandwidth without requiring additional digital output capacity or resulting in a significant increase in readout circuit size, because a single ADC is sufficient to process the analog signal summed with analog signals from multiple analog signal paths before its input.

[0149] Figure 14 This is a diagram illustrating segment 1401 of a detector array 1400 having an exemplary architecture according to an embodiment of the present disclosure. Figure 14 The architecture can be used for single-beam inspection tools or multi-beam inspection tools (e.g., Figure 2 (Beam-emitting tool 104 in the middle). Section 1400 and Figure 10 Segment 1002 shares some similar components, including sensing elements 311, 312, 313, and 314, ADC 1024, and digital multiplexer 408. Figure 14 In this configuration, segment 1400 includes four sub-segments 1420, 1422, 1424, and 1426, each sub-segment including 2×2 sensing elements. Sub-segment 1424 includes sensing elements 311, 312, 313, and 314. Sub-segments 1420, 1422, 1424, and 1426 are communicatively coupled to wiring paths 1421, 1423, 1425, and 1427, respectively. Figure 14 Four analog signal paths 1402, 1404, 1406, and 1408, respectively, are communicatively coupled to wiring paths 1421, 1423, 1425, and 1427. Analog signal paths 1402, 1404, 1406, and 1408 can each be similar to... Figure 10 The analog signal path 1004 includes amplifiers 1410, 1412, 1414, and 1416, respectively. Each of the analog signal paths 1402, 1404, 1406, and 1408 has an upstream switching element (e.g., similar to...) between itself and its wiring path. Figure 10The switching element 1008 in the middle, and also has a downstream switching element (e.g., similar to the one in the interconnect layer 1006) between it and the interconnect layer 1006. Figure 10 (Switching element 1010 in the middle). For example... Figure 14 As shown, analog signal paths 1402, 1404, 1406, and 1408 are communicatively coupled to summing point 1418 via interconnect layer 1006, wherein switching elements 1403, 1405, 1407, and 1409 (e.g., each switching element is similar to...) Figure 10 A switching element 1012 is arranged between the summing point 1418 and the interconnect layer 1006. The summing point 1418 is communicatively coupled to the ADC 1024, which is also communicatively coupled to the digital multiplexer 408. The summing point 1418 can operate as an analog multiplexer and can output a multiplexed analog signal to the ADC 1024 to convert it into a digital signal. This digital signal can be output to the digital multiplexer 408 for further processing.

[0150] exist Figure 14 In this configuration, sub-segments 1420, 1422, 1424, and 1426 are associated with analog signal paths 1402, 1404, 1406, and 1408, respectively. Analog signal paths 1402, 1404, 1406, and 1408 are associated with ADC 1024. In some embodiments, the number of analog signal paths associated with one ADC in segment 1400 can be arbitrary. In some embodiments, a different number of analog signal paths can be associated with one ADC in segment 1400. Figure 10 Compared to the analog signal path 1004 of the detector array 1000, Figure 14 Each of the analog signal paths 1402, 1404, 1406, and 1408 can process signals detected from fewer sensing elements, which increases analog signal bandwidth and configuration flexibility. By controlling the opening and closing of interconnecting switching elements 1428, 1430, 1432, and 1434, and switching elements 1403, 1405, 1407, and 1409, segment 1400 can route signals output from analog signal paths 1402, 1404, 1406, and 1408 to summing point 1418 in various ways.

[0151] In some embodiments, if the signals output from analog signal paths 1402, 1404, 1406, and 1408 originate from the same beam, these signals can be added at interconnect layer 1006 before being output to summing point 1418 (e.g., by hardware-based analog signal summation). For example, in this case, interconnect switching elements 1428, 1430, and 1432 can be communicatively connected, switching elements 1403, 1405, and 1407 can be communicatively disconnected, and switching element 1409 can be communicatively connected, thereby allowing the signals output from analog signal paths 1402, 1404, 1406, and 1408 to be added at interconnect layer 1006 and output to summing point 1418 via switching element 1409.

[0152] In some embodiments, if the signals output from analog signal paths 1402, 1404, 1406, and 1408 all originate from different beams, these signals can be multiplexed to summing point 1418 without hardware-based analog signal summation. For example, in this case, switching elements 1403, 1405, 1407, and 1409 can all be communicatively connected. If the highest sampling rate of ADC 1024 is sufficient to support the required pixel rate, interconnecting switching elements 1428, 1430, 1432, and 1434 can all be communicatively disconnected, and the signals output from analog signal paths 1402, 1404, 1406, and 1408 can be multiplexed to summing point 1418, which can also output the multiplexed signal to ADC 1024 for signal digitization. If the highest sampling rate of ADC 1024 is insufficient to support the required pixel rate, the signals output from analog signal paths 1402, 1404, 1406, and 1408 can be output to multiple summing points (e.g., including summing point 1418 or others) via one or more interconnect switching elements in interconnect layer 1006, and the multiple summing points can output signals to multiple ADCs (e.g., including ADC 1024 or others) for signal digitization. In this case, the multiple ADCs can operate in interleaved mode.

[0153] In some embodiments, some of the signals output from analog signal paths 1402, 1404, 1406, and 1408 may originate from the same beam spot, and some of the signals may originate from different beam spots. In these cases, signals from the same beam spot can be summed at interconnect layer 1006 to generate an analog signal summation, and signals from different beam spots can be kept as separate signals at interconnect layer 1006 (e.g., no hardware-based analog signal summation is performed). Depending on whether the highest sampling rate of ADC 1024 is sufficient to support the required pixel rate, the summed analog signal and the separate signals can be multiplexed to summation point 1418 or more summation points, as described above.

[0154] In some embodiments, by communicatively coupling multiple analog signal paths (e.g., including analog signal paths 1402, 1404, 1406, and 1408) to multiple summing points (e.g., including summing point 1418) via switching elements of interconnect layer 1006, further enhancements can be achieved, such as... Figure 14 The architecture shown offers configuration flexibility and performance adaptability. By doing so, segment 1400 can be configured to have various ratios of ADC to analog signal paths in the data channel for different applications. Depending on the application and detector setup, the number of analog signal paths (e.g., the number of amplifiers) in the data channel may be greater than, less than, or equal to the number of ADCs. By doing so, as... Figure 11 , Figure 13 and Figure 14 The architecture shown can provide signal processing with high configuration flexibility, high fault tolerance, and low power consumption without incurring significant costs.

[0155] High configuration flexibility avoids one-way optimization problems. For example, several ADCs can interleave signals from multiple analog signal paths, such as in applications involving large beams and requiring high pixel rates. In another example, one ADC can be assigned to one beam (e.g., requiring an analog signal path) for signal processing. In yet another example, one ADC can be shared by several beams (e.g., via several analog signal paths) for signal processing, such as in applications involving high-density beams and not requiring high pixel rates. High fault tolerance increases the robustness of the detection system. For example, if some of the detector's amplifiers or ADCs fail, the faulty components can be bypassed, and signals that should be processed by them can be redirected to other components for processing. Low power consumption can be achieved by powering (and communicatively disconnecting) unnecessary components of the detector (e.g., analog signal paths or ADCs) without affecting the performance required for a particular application. It should be noted that the specific amplifier-to-ADC ratio and the specific methods of signal routing and processing are not limited to the examples above, and embodiments of this disclosure can provide other implementations depending on the specific application.

[0156] Figure 15 This is a flowchart of an exemplary method 1500 for detecting a beam of charged particles according to embodiments of the present disclosure. Method 1500 can be controlled by a controller of a charged particle inspection system (e.g., Figure 1 Controller 109 or Figure 9 The controller (904) in the system executes the method. The controller may include a circuit system (e.g., memory and processor) programmed to implement method 1500. For example, the controller may be an internal controller coupled to the charged particle inspection system or an external controller (e.g., ...). Figure 1 Controller 109 or Figure 9 (Controller 904 in the middle). Method 1500 can be connected to about Figures 3A to 14 The components, operations, and procedures shown and described.

[0157] like Figure 15 As shown, method 1500 may begin with step 1502, which acquires a detection image. The detection image may be an image of a charged particle beam spot (e.g., a secondary electron beam spot) formed on the detector surface. The detection image may include a secondary beam spot projection pattern on the detector surface. When multiple charged particle beams are incident on the detector, the detection image may include multiple beam spots. Step 1502 may include reading the respective outputs of a sensing element (which may be included in the detector). In step 1502, it may be determined that charged particles leaving the wafer are incident on the detector and therefore image processing should begin. Step 1502 may include image acquisition processing performed at a relatively low rate compared to the target pixel rate for a particular application.

[0158] Next, as Figure 15 As shown, method 1500 can proceed to step 1504, which determines a boundary. This boundary may correspond to the boundary of a charged particle beam spot projected onto the detector surface. The boundary can be determined based on the information collected at step 1502. Step 1504 may include determining multiple boundaries corresponding to multiple beam spots. As discussed below, the boundaries can be used to assign sensing elements to groups.

[0159] Next, as Figure 15 As shown, method 1500 can proceed to step 1506, which involves grouping sensing elements together. Sensing elements within a boundary can be grouped together. Step 1506 may include actuating a switch. The switch between sensing elements can be actuated such that, for example, two adjacent sensing elements within the same group are electrically connected.

[0160] Next, as Figure 15 As shown, method 1500 can proceed to step 1508, which involves determining whether the beam spot is large. Step 1508 can be based on predetermined criteria. Step 1508 may include determining the size of the beam spot and comparing it to a threshold. Step 1508 may include determining whether a target analog bandwidth corresponding to a target pixel rate is achievable for the sensing element group. Determining whether the target analog bandwidth is achievable can be based on the characteristics of the sensing elements and signal processing circuitry system included in the group. For example, the beam spot may be determined to be large when it has a size such that a target bandwidth for the application is not achievable based on the number of sensing elements included in the group.

[0161] In response to determining in step 1508 that the beam spot is not large, method 1500 may proceed to step 1522, which involves grounding unused sensing elements, as will be discussed below. When the beam spot is determined to be small, it can be treated as a single group and processed accordingly.

[0162] In response to determining in step 1508 that the beam spot is large, method 1500 may proceed to step 1520 of subdividing the group corresponding to the large beam spot into subgroups. Step 1520 may include determining the size of the subgroups. The size of the subgroups may be based on a target analog bandwidth. The subgroups may be considered as individual groups of sensing elements and may be associated with analog signal paths, as will be discussed below.

[0163] Next, as Figure 15 As shown, method 1500 can proceed from step 1508 or step 1520 to step 1522, which involves grounding an unused sensing element. The unused sensing element can be grounded using a grounding switch or other component. The grounding switch can be configured at the sensing element level of the circuit system. An example of a grounding switch is shown below. Figures 16A to 16BAs shown in the figure. For example, it can be determined that a sensing element is not used based on whether the sensing element is included in a group or subgroup. In some embodiments, unused sensing elements can be identified as those sensing elements that do not output a detection signal, or as those sensing elements that are excluded from the group or subgroup for some reason (e.g., to reduce crosstalk).

[0164] Next, as Figure 15 As shown, method 1500 can proceed to step 1524, which involves determining a signal output path. Step 1524 may include determining a signal output path for each beam spot and its corresponding group or subgroup of sensing elements. The signal output path may be an analog signal path. In some embodiments, the location of the output point for each group or subgroup may be determined as a region at the geometric center or centroid of each group or subgroup of sensing elements. Determining the output location based on the centroid may involve using the intensity distribution of the beam spot within the group or subgroup.

[0165] Next, as Figure 15 As shown, method 1500 can proceed to step 1526, actuating a switch to connect a set or subgroup of sensing elements to its signal output path. The signal output path assigned to the set or subgroup of sensing elements can be the path determined in step 1524. The switch actuated in step 1526 can be a switch provided at the output of a sensing element (e.g., opposite to a switch between adjacent sensing elements). Step 1526 can include connecting a sensing element to an analog signal path having the shortest distance to the geometric center or centroid of the set or subgroup. The input of the analog signal path can be connected to the set or subgroup of sensing elements via the output sensed at the geometric center or centroid of the set or subgroup, or via the output of a sensing element near the geometric center or centroid. Switches at the outputs of sensing elements can be closed, and these sensing elements can be connected to a common line in the segment to which the analog signal path belongs. In some embodiments, the number of switches at the outputs of sensing elements can be one or more. When the number of switches is greater than one, the impedance from the set or subgroup of sensing elements to the input of the analog signal path can be reduced. This can result in improved analog signal bandwidth.

[0166] Next, as Figure 15 As shown, method 1500 can proceed to signal processing step 1528. Step 1528 may include digitizing the beamspot signal via an ADC. The signal digitized by the ADC may be an amplified signal amplified through an analog signal path of the sensing element group. When the beamspot is large ("Yes" in step 1508), step 1528 may include summing the signals from the sensing element subgroup. For example, by connecting corresponding switches between the outputs of the analog signal path (e.g., in...). Figure 10 , Figure 13 and Figure 14 In the interconnect layer 1006 shown, these signals can be added together via hardware. Step 1528 may include: determining whether the target pixel rate is greater than the maximum sampling rate of an ADC. If the target pixel rate is not greater than the maximum sampling rate of an ADC, then an ADC can be assigned to each output signal path of the beam. If the target pixel rate is much smaller than the maximum sampling rate of an ADC, then an ADC can be added together via the interconnect layer (e.g., as shown in the interconnect layer 1006). Figure 10 , Figure 13 and Figure 14 The interconnect layer 1006 shown is shared by multiple analog signals. The target pixel rate may be much smaller than (<<) the highest sampling rate of an ADC (e.g., when they differ by at least one order of magnitude (e.g., the highest sampling rate is 10 times or more greater than the target pixel rate)). If the target pixel rate is higher than the highest sampling rate of an ADC, the multiple ADCs can be interleaved through the interconnect layer, and the multiple ADCs can be used to process an analog signal of a single beam.

[0167] Next, as Figure 15 As shown, method 1500 can proceed to step 1530, which determines the signal routing. The signal routing for the ADC output can be determined based on the ADC's position in the detector and the digital output channels used to transmit data from them.

[0168] Next, as Figure 15 As shown, method 1500 can proceed to step 1532, which configures the detector. The detector can be configured based on various other determinations performed in method 1500. For example, the detector can be configured to operate in a normal beam intensity detection mode that runs at the pixel rate required for a particular application. This setting can be maintained until SEM imaging conditions change (potentially altering the secondary electron beam projection).

[0169] Modifications and changes to Method 1500 will be apparent. For example, in Figure 15 In step 1502, the controller may determine a group of sensing elements, wherein the group of sensing elements may include a charged particle detector (e.g., Figure 13 Detector 1300 or Figure 14 The sensing element is the beam spot projection of the charged particle beam in the detector array 1400. For example, the charged particle beam can be... Figure 2 The secondary charged particle beams 236, 238, and 240 are used. The sensing element can be located on the surface of the charged particle detector (e.g., ...). Figure 3B On the sensor surface 300B, such as Figure 10 Any of the sensing elements 311 to 314 in the middle Figure 13Any of the sensing elements 701 to 706 in the middle, or Figure 14 The sensing element group consists of any one of sensing elements 311 to 314. The sensing element group can represent the outline or shape of the beam spot. For example, the boundary sensing element in the sensing element group can represent the boundary of the beam spot.

[0170] In some embodiments, the charged particle detector may be a scanning electron microscope (SEM). In some embodiments, the charged particle detector may be in a single-beam inspection apparatus (e.g., a single-beam SEM). In some embodiments, the charged particle detector may be in a multi-beam inspection apparatus (e.g., Figure 2 In the beam tool 104). It should be noted that method 1500 can be implemented in a single-beam inspection device or a multi-beam inspection device, and this disclosure does not impose any limitation on such implementation.

[0171] In some embodiments, the sensing element group may include multiple sensing elements. In these cases, the controller may receive the output signals of multiple sensing elements of the charged particle detector. The controller may collect information to, for example, detect or form an image of a secondary charged particle beam spot projected onto the detector. The controller may read the output of each individual sensing element. Any switching between adjacent sensing elements (e.g., as...) Figure 13 The inter-element switching elements 711, 712, and 713 shown can be in an open (e.g., open) state. For example, if the charged particle detector is Figure 13 If the detector 1300 is used, the controller can receive the output signal of the sensing element 706 through output 719. The controller can use the collected information to determine the boundary of the charged particle beam spot formed on the detector surface.

[0172] As in Figure 15 The determination of whether the beam spot is large in step 1508 can be based on certain conditions. These conditions may relate to the capabilities of the signal processing circuitry system in the detector. For example, the controller can determine whether the signal processing circuitry system associated with the sensing element group can or cannot handle a specific situation (e.g., based on the target application). This may be related to the target analog signal bandwidth for a given application. The bandwidth can be determined by the characteristics of the sensing element group, including its associated components. For example, the bandwidth for the sensing element group can be determined by the size of the sensing element group and the amplifier associated with it. The total analog signal bandwidth used to process the output signal of the sensing element group at a predetermined pixel rate may or may not meet the requirements of the application.

[0173] For example, when the beam spot of the charged particle beam detected at step 1502 is large and covers a large number of sensing elements, these sensing elements may be grouped together into a sensing element group, and the analog signal bandwidth may be reduced, causing the signal processing circuitry system of the sensing element group to fail to achieve the analog signal bandwidth required for the desired application. As an example, the beam spot of the charged particle beam may cover the sensing elements in segment 1401 (see...). Figure 14 The sensor element in segment 1401 can be grouped together with covered sensor elements in other segments. The input of one analog signal path associated with segment 1401 can be communicatively coupled to the group of sensor elements. In some embodiments, if the required analog signal bandwidth corresponding to the target pixel rate for processing the output signal of the group cannot be met, the controller can divide the group into smaller subgroups, each of which can be communicatively coupled to the input of an analog signal path in segment 1401 or in another segment that can be (at least partially) covered by the beamspot. In this way, signals can be transmitted through different subgroups and different signal processing circuitry systems. The signals of the subgroups can be summed together to represent the total signal of the original group.

[0174] Figure 16A This is a diagram illustrating an exemplary switch design for a detector array 1600 according to an embodiment of the present disclosure. The detector array 1600 may be... Figure 3A Example embodiment of detector 300A. For example, the switching design of detector array 1600 can be implemented in detector array 400, 1000 or 1400. Figure 16A The switch network or switch matrix design can be used for single-beam inspection tools or multi-beam inspection tools (e.g., Figure 2 (Beam-emitting tool 164 in the middle).

[0175] exist Figure 16A In this configuration, the detector array 1600 may include multiple segments (e.g., similar to...). Figure 10 Segment 1002, including segment 1602 (enclosed by a dashed box), can be communicatively coupled to one or more other segments of detector array 1600. Figure 16A In this context, segment 1602 is communicatively coupled to four adjacent (or "nearby") segments in its four planar directions (indicated by double-headed arrows). Figure 16A (As shown). Two “adjacent” objects along the direction described herein can refer to two objects along that direction without an intervening object between them. Such objects can be, for example, segments or sensing elements.

[0176] Section 1602 includes 4×4 sensing elements (e.g., similar to...). Figure 4 , Figure 10 and Figure 14 Any of the sensing elements 312 to 314 in the middle Figures 5 to 6 Any of the sensing elements 511 to 513 in the middle, or Figure 7 , Figure 8 and Figure 13 The sensing elements 701 to 706 (any one of them), including sensing elements 1604 and 1606 (enclosed by a dotted frame). Figure 16A As shown, each sensing element of the detector array 1600 can have the same structure and operate in the same manner. Figure 16A In this configuration, sensing elements 1604 and 1606 are adjacent in the vertical (e.g., y-axis) direction. Segment 1602 also includes an output bus 1608 (shown as a thick black line), which is a shared signal bus for receiving individual detection signals generated by the sensing elements (e.g., sensing elements 1604 or 1606). The output bus 1608 can independently output the received signals to the segment signal path or readout circuitry via bus output 1610. Figure 16A As shown, the output bus 1608 can output signals to the segment circuit 1603. The segment circuit 1603 can, for example, be included in... Figure 3A In any of segments 321 to 324. Switching element 1612 may be arranged between bus output 1610 and segment circuit 1603. In some embodiments, when there is no output signal at bus output 1610, switching element 1612 may be configured to be communicatively disconnected (e.g., open) to reduce parasitic parameters in signal processing.

[0177] Figure 16B The illustration shows an embodiment according to the present disclosure. Figure 16A The diagram shows sensing elements 1604 and 1606 in segment 1602. The sensing elements of the detector array can generate signals in response to the incidence of incoming charged particles. Therefore, the sensing element can be used as a diode because it can convert incident energy into a measurable signal and can do so in a predetermined direction. The sensing elements of the detector array can be conceptualized as including diodes or other electrical components. Figure 16BAs shown, sensing element 1604 includes diode 1614, grounding switch element 1616, grounding circuit 1617, component-bus switch element 1618, and inter-component switch elements 1620 and 1622. Similarly, sensing element 1606 includes diode 1624, grounding switch element 1626, grounding circuit 1627, component-bus switch element 1628, and inter-component switch elements 1630 and 1632. For example, in sensing element 1604, diode 1614 can convert the energy of incident charged particles into a measurable electrical signal (e.g., current). For example, diode 1614 can be a PIN diode, avalanche diode, electron multiplier tube (EMT), etc. Grounding switch element 1616 can connect sensing element 1604 to grounding circuit 1617. Grounding circuit can be used to discharge charge from unused sensing elements. In some cases, such as when sensing elements are disconnected to reduce crosstalk, noise, or parasitic parameters, unused sensing elements can still receive charged particles leaving the wafer. If the sensing element is used for charged particle beam detection, a grounding switch (e.g., grounding switch element 1616) at the sensing element stage circuitry can remain communicatively disconnected (e.g., open). If the sensing element is not in use, the grounding switch can be configured to be communicatively connected (e.g., closed). Element-bus switch element 1618 can communicatively couple diode 1614 to output bus 1608 for detection signal output. Inter-element switch elements 1620 and 1622 can communicatively couple sensing element 1604 to its adjacent sensing element in the horizontal (e.g., x-axis) and vertical (e.g., y-axis) directions, respectively. For example, when communicatively connected (e.g., closed), inter-element switch element 1620 can communicatively couple sensing element 1604 to sensing element 1606. Similar components of sensing element 1606 can function in a similar manner to their counterparts in sensing element 1604.

[0178] In some embodiments, the element-bus switching element (e.g., element-bus switching element 1618) of the sensing element 1604 can be controlled independently (e.g., by...). Figure 9The controller 904 in the controller is used for signal output. In some cases, sensing elements may be in use or not. Sensing elements may be used or not used regardless of whether they receive charged particles. The use or non-use of sensing elements may be selected based on certain criteria. Criteria may include, for example, whether the sensing element is in a group used for beam detection. Whether a sensing element is in a group may be based on the secondary beam spot projection pattern on the detector surface (e.g., within the boundary of the secondary beam spot) or other requirements. Other such requirements may be based on, for example, the beam spot collection rate or crosstalk between beams. Sensing elements in use may generate a detection signal in response to receiving charged particles and their output may be coupled to the output bus 1608 via a switch (e.g., element-bus switch element 1618). If multiple sensing elements (e.g., sensing elements 1604 and 1606) are in use, their respective element-bus switch elements may be controlled to connect their respective diodes to the output bus 1608.

[0179] In some embodiments, multiple sensing elements may be connected sequentially to the output bus 1608. For example, when sensing elements 1604 and 1606 are both in use, element-bus switching elements 1618 and 1628 may be connected and disconnected one by one. For example, when sensing element 1604 outputs its signal to the output bus 1608, all other sensing elements in segment 1602 (including sensing element 1606) may be communicatively disconnected from the output bus 1608. When sensing element 1606 outputs its signal to the output bus 1608, all other sensing elements in segment 1602 (including sensing element 1604) may be communicatively disconnected from the output bus 1608. In this way, the output bus 1608 can receive detection signals from the sensing elements individually (e.g., sequentially) and output them individually (e.g., sequentially) to segment circuit 1603 without causing significant interference in between. In some embodiments, multiple sensing elements may be connected in parallel to the output bus 1608. For example, when both sensing elements 1604 and 1606 are in use, element-bus switch elements 1618 and 1628 can be connected simultaneously.

[0180] The detector can have multiple operating modes. In a first mode, the detector can acquire a secondary beamspot projection pattern (e.g., an image of a beamspot on the detector surface). The first mode can be used to determine a grouping of sensing elements. In a second mode, the detector can perform beamspot intensity detection. In the first mode, each sensing element in the detector can be addressed one by one (e.g., sequentially) to achieve an electronic scan on the detector surface. However, in some embodiments, the first mode is not necessarily limited to reading only one sensing element on the detector surface at a time. For example, the detector can include multiple segments, and sensing elements from each segment can be read simultaneously. In some embodiments, there can be a signal path associated with each segment, and only one sensing element can be read in a segment at a time, but readouts can be performed in parallel between different segments. Furthermore, in the first mode, the readout of the beamspot projection pattern can include all of the detector's sensing elements, or it can include only a portion of the sensing elements that may be located in a specific region of interest. Figure 16A The detector array 1600 can be configured to operate in a first mode and a second mode.

[0181] Figure 17A This is a diagram illustrating another exemplary switch design of a detector array 1700 according to an embodiment of the present disclosure. The detector array 1700 can be based on... Figure 16A Modification of the detector array 1600. Figure 17A In this configuration, detector array 1700 may include multiple segments, including segment 1702. Segment 1702 may be similar to... Figure 16A Section 1602 may include sensing element 1704 and a modified switch configuration. Figure 17B The illustration shows an embodiment according to the present disclosure. Figure 17A The diagram shows sensing elements 1704 and 1606 in section 1702. Figure 17BIn this section, sensing element 1704 may have components similar to those of other sensing elements in segment 1702. For example, similar to sensing element 1606, sensing element 1704 includes a diode 1714, a grounding switch element 1716, a grounding circuit 1717, and inter-element switch elements 1720 and 1722. However, sensing element 1704 does not include any element-bus switch element (unlike element-bus switch element 1628 in sensing element 1606). That is, sensing element 1704 is permanently disconnected from output bus 1608 and does not directly output a detection signal to output bus 1608. Additionally, sensing element 1704 includes a common output 1718. Common output 1718 can function as a common signal output for segment 1702. Common output 1718 can be used to output signals from all or some of the sensing elements in segment 1702 or from other sensing elements that can be combined with the sensing elements in segment 1702. For example, when segment 1702 has multiple sensing elements in use (e.g., including sensing element 1606 in use and its adjacent sensing elements), all inter-element switching elements (e.g., including inter-element switching element 1720) between those sensing elements in use and sensing element 1704 can be communicatively connected, such that all detection signals from those sensing elements can be routed to common output 1718 for signal output. Furthermore, for example, a group of sensing elements for detecting beam intensity can include sensing elements spanning multiple segments. Sensing elements within a group can be connected (e.g., via inter-element switching elements), and the group can include sensing elements permanently disconnected from the output bus 1608. For example, the group can include sensing elements from outside segment 1702 and can include sensing elements within segment 1702, including sensing element 1704. In this case, common output 1718 can be used to output the signals of the group. At common output 1718, all received signals can be added, combined, or merged before output. It should be noted that the sensing element 1704 can be arranged at any location in segment 1702 (e.g., at any boundary location or any interior location), and is not limited to this. Figure 17A The location is shown in the figure. Additionally, the detector can be highly flexible to accommodate various arrangements of beam spot projection onto the detector. For example, it is highly likely that in each segment used for beam spot intensity detection, only a portion of the sensing elements in that segment is included in the group. Alternatively, a first set of sensing elements from a segment may be included in a first group (e.g., associated with a first beam spot), and a second set of sensing elements from that segment may be included in a second group (e.g., associated with a different beam spot), and so on.

[0182] Return to reference Figure 17AThe common output 1718 can be communicatively coupled to the contact 1710 via switching element 1708. The bus output 1610 can be communicatively coupled to the contact 1710 via switching element 1612. In some embodiments, the contact 1710 can be arranged in the sensor layer (e.g., Figure 3A In the sensor layer 301, the sensor layer includes a sensing element in section 1702.

[0183] The detector array 1700 may also include a switch network 1706 communicatively coupled to a segment (including segment 1702). Figure 17A In this configuration, switch network 1706 can be coupled to segment 1702 via contact 1710 and to segment signal paths or readout circuits (e.g., segment circuit 1603) via switching element 1712. Switch network 1706 may include multiple inter-segment switching elements that communicatively couple the signal outputs of multiple segments. For example, switch network 1706 may include inter-segment switching elements that couple contact 1710 (and segment circuit 1603) to other segments ( Figure 17A (or contacts not shown in 17B).

[0184] In some embodiments, segment 1702 can be configured to operate in different modes by controlling the opening and closing of switching elements 1612 and 1708. For example, when segment 1702 is configured to operate in a first mode, switching element 1612 can be closed, while switching element 1708 can be open. In this case, bus output 1610 can be communicatively coupled to contact 1710, and common output 1718 can be communicatively decoupled from contact 1710, such that the detection signal of the sensing elements (except sensing element 1704) of segment 1702 can be routed to contact 1710 only via bus output 1610. The output signal can also be routed from contact 1710 to segment circuit 1603 via switching element 1712 for signal processing. In the first mode, the detection signal of segment 1702 can be controlled to operate in different modes as described above. Figure 16AThe signal output process of segment 1602 in the first mode is similar to that of contact 1710, and will not be repeated here. In other words, in the first mode, segment 1702 can operate in a similar manner to the first mode of segment 1602 (e.g., for reading out all sensing elements of the segment to obtain a secondary beam projection pattern). When switching element 1612 is communicatively decoupled from contact 1710, the detection signal of sensing element 1704 of segment 1702 can be routed to contact 1710 via common output 1718 and switching element 1708. The routing of the signal from sensing element 1704 can be achieved by communicatively connecting switching element 1708. Therefore, all sensing elements, including sensing element 1704, can be addressed in the first mode.

[0185] When operating in the first mode, the signals from the sensing elements can be output serially, and the detector array 1700 can detect the beam profile (e.g., size, shape, boundaries, etc.) of the incident charged particle beam. The detected beam profile can be used to determine the grouping of sensing elements or for other purposes. For example, sensing elements within the boundaries of the beam can be identified as belonging to the same group. Grouping of sensing elements can be useful in other processing steps, such as in the second mode, where switching elements between adjacent sensing elements in a group can be closed, allowing the outputs of the sensing elements to be read together to determine the beam intensity. In some embodiments, the first mode can be a precursor to the second mode. However, the information collected from operation in the first mode can have various uses. For example, the first mode can be used to detect and monitor the performance of the SEM system by acquiring a secondary beam projection pattern.

[0186] In another example, when segment 1702 is configured to operate in the second mode, switching element 1612 can be turned on, and switching element 1708 can be turned off. In this case, common output 1718 can be communicatively coupled to contact 1710, and bus output 1610 can be communicatively decoupled from contact 1710, such that the detection signal from the sensing element can be routed to contact 1710 only via common output 1718. The output signal can also be routed from contact 1710 to segment circuit 1603 via switching element 1712 for signal processing.

[0187] When operating in the second mode, inter-element switching elements between any sensing elements within a group associated with a specific beam spot can be closed, allowing all detection signals generated by the sensing elements in use within the group to be routed to a common output. For example, as Figure 17CAs shown, a secondary charged particle beam can be incident on detector array 1700 such that a secondary beam spot 1777 covers sensing elements 1606 and 1704. It can be determined that (e.g., in a first mode) sensing elements 1606 and 1704 are within the boundary of the secondary beam spot 1777, and sensing elements 1606 and 1704 can be used in a second mode. When sensing elements 1606 and 1704 are combined, inter-element switching element 1720 can be closed to route the detection signal of sensing element 1606 to common output 1718. In another example, in the event that a relatively large beam spot can cover other sensing elements besides sensing elements 1606 and 1704, inter-element switching elements between these sensing elements and sensing elements 1606 and 1704 can also be closed. It should be noted that when sensing element 1704 is used, inter-element switching elements between sensing element 1704 and other sensing elements may need to be closed to add their signals and route them through common output 1718. At common output 1718, all incoming detection signals can be output as a common signal to contact 1710 via switching element 1708. The common signal can be a combination of incoming detection signals (e.g., amplitude summation).

[0188] In some embodiments, when operating in the second mode, different common signals generated by different segments of the detector array 1700 can be combined to output to a single segment circuit. This may occur when a beam spot formed on the detector array 1700 covers sensing elements in multiple different segments, and therefore the group of sensing elements can span multiple different segments. Thus, multiple segments may be involved when detecting a single beam spot covering the group of sensing elements. To improve performance (e.g., analog bandwidth), the common output of the multiple segments involved in detecting the beam spot can be used to route signals from that group. The outputs of the sensing elements in that group can be routed via the common output or contact of the respective segment. The outputs can be joined via an inter-segment switching network and can be routed to a single segment circuit. For example, segment 1702 can output a first common signal to the switching network 1706 via contact 1710. The second segment of the detector array 1700 ( Figure 17A (or not shown in 17B) can also be achieved through a second contact ( Figure 17A (Not shown) outputs a second common signal to the switching network 1706. Similar to contact 1710, the second contact can be communicatively coupled to the second segment circuit via the second switching element. Figure 17A(Or as shown in 17B). By closing one or more inter-segment switching elements in the switching network 1706 between contact 1710 and the second contact, the first common signal and the second common signal can be combined (e.g., amplitude addition) and output as a combined signal. For example, a combined signal can be generated by adding one or more common signals. If switching element 1712 is closed and the second switching element (between the second contact and the second segment circuit) is open, the combined signal can be output to segment circuit 1603. If switching element 1712 is open and the second switching element is closed, the combined signal can be output to the second segment circuit. By adding the switching network 1706, the analog signal bandwidth can be increased.

[0189] When operating in the second mode, the grouped sensing elements of the detector array 1700 can output in parallel. When the beam spot size of the charged particle beam is large, the beam spot can cover multiple adjacent sensing elements. Multiple sensing elements in a group can be distributed in a single segment (e.g., segment 1702) or multiple adjacent segments (e.g., including segment 1702 and other segments) of the detector array 1700. Detection signals can be combined into a common signal (e.g., when sensing elements are distributed in a single segment) or a combined signal merged from multiple common signals (e.g., when sensing elements are distributed in multiple segments). The common signal or combined signal can be output to a single segment circuit (e.g., segment circuit 1603). By operating in the second mode, the detector array 1700 can rapidly output detection signals from a large number of sensing elements. Therefore, a wide analog signal bandwidth can be utilized for beam spot intensity determination.

[0190] In some embodiments, as discussed above, the first mode and the second mode may correspond to Figure 15 Method 1500 may include certain steps. For example, a first mode may include steps 1502 and 1504. A second mode may include... Figure 15 Steps 1506 to 1532 are shown. The first mode may correspond to the beam spot boundary detection mode or the beam projection imaging mode, and the second mode may correspond to the beam spot intensity detection mode.

[0191] from Figures 17A to 17C As can be seen from the description, the switch network 1706 can improve the analog signal bandwidth and pixel rate of the detector array 1700. For example, the pixel rate of the detector array 1700 can be millions, billions, or even trillions of pixels per second. Furthermore, by using the switch network 1706, sensing elements covered by the same charged particle beam and distributed in multiple segments can be flexibly configured to detect the charged particle beam, regardless of the location of the charged particle beam impact.

[0192] In some embodiments, the more sensing elements involved in detecting a charged particle beam, the more parasitic parameters may appear in the signal processing circuitry (e.g., segment circuit 1603). Parasitic parameters (e.g., parasitic resistance or capacitance) seen in the input segment of the segment circuit can also be reduced by using switching elements 1612, 1708, and 1712. For example, when segment 1702 operates in a first mode, inter-element switching elements (e.g., including inter-element switching elements 1720 and 1722) can be turned on, while a detection signal is output from bus output 1610 to segment circuit 1603. When detector array 1700 operates in a second mode, element-bus switching elements (e.g., Figure 17B The component in the circuit (bus switch element 1628) can be turned on, and a common signal is output from the common output 1718 to the segment circuit 1603. By turning on the switch element 1612 in the second mode, the parasitic capacitance seen by the segment circuit 1603 can be reduced. The signal can be routed from the common output 1718 to the segment circuit 1603. By adding the switch network 1706, the common outputs from segments having sensing elements in the same group can be connected, and the parasitic resistance in the signal path to the input of the segment circuit can be reduced. In addition, by turning on some switches in the switch network 1706, unused segments (e.g., those not outputting a detection signal, or disconnected for some other reason) can be communicatively disconnected from the signal processing circuit (e.g., including the segment circuit 1603), which can reduce the parasitic capacitance seen by the signal processing circuit.

[0193] In some embodiments, further improvements to the detector, such as detector array 1700, are possible. For example, segment 1702 may use a large number of switches, which could result in excessive parasitic parameters (e.g., equivalent series resistance or parasitic capacitance) as seen by the signal processing circuitry. Furthermore, inter-element switches (e.g., inter-element switch elements 1720 and 1722) are only arranged in the x and y axes of segment 1702. Therefore, when a signal travels from one diagonally adjacent sensing element to another, it passes through two inter-element switch elements, which may incur more parasitic parameters (e.g., equivalent series resistance) compared to when the signal travels from one horizontally or vertically adjacent sensing element to another.

[0194] In some embodiments of this disclosure, a detector array design is provided that can achieve high analog signal bandwidth, high pixel rate and high configuration flexibility. Figure 18A This diagram illustrates an exemplary enhanced switch design for a detector array 1800 according to an embodiment of the present disclosure. The detector array 1800 can be based on... Figure 16A Detector array 1600 or Figure 17A Modification of the detector array 1700. Figure 18A In this configuration, detector array 1800 may include multiple segments, including segment 1802. Segment 1802 may be similar to... Figure 16A Section 1602 may include sensing element 1804 and a modified switch configuration. Figure 18B This diagram illustrates sensing elements 1804 and 1606 of segment 1802 of a detector array 1800 according to an embodiment of the present disclosure. Figure 18B In this section, sensing element 1804 may have similar components and similar electrical connection schemes to other sensing elements in segment 1802 (e.g., sensing element 1606). For example, similar to sensing element 1606 (or... Figure 16B The sensing element 1604 includes a diode 1614, a grounding switch element 1616, a grounding circuit 1617, a component-to-bus switch element 1618, and component-to-component switch elements 1620 and 1622. Additionally, the sensing element 1804 includes a common output 1818. The common output 1818 can be similar to... Figure 17B It functions by using the common output 1718. Unlike sensing element 1704, sensing element 1804 includes a bus switch element 1618 that can communicatively couple diode 1614 to output bus 1608. That is, sensing element 1804 can directly output its detection signal to output bus 1608 (e.g., when detector array 1800 operates in a first mode, similar to the above regarding...). Figures 17A to 17C (As described). By using the element-bus switch element 1618 in the sensing element 1804, all sensing elements in segment 1802 can have a uniform configuration. By providing a uniform arrangement of sensing elements, the fabrication of the detector array can be simplified.

[0195] and Figure 17A Compared to segment 1702, segment 1802 can still include output bus 1608 and bus output 1610. Figure 17ACompared to detector array 1700, segment 1802 may include switching element 1620, switching network 1706, contact 1710, and switching element 1712. However, detector array 1800 does not include switching element 1708 between common output 1718 and switching network 1706. Therefore, the number of switching elements between common output 1818 and segment circuit 1603 in detector array 1800 is less than the number of switching elements between common output 1718 and segment circuit 1603 in detector array 1700. By reducing the number of switching elements between common output 1818 and segment circuit 1603, parasitic parameters (e.g., equivalent series resistance) introduced in segment circuit 1603 can be reduced. In some cases, parasitic parameters introduced in the signal processing circuitry of detector array 1800 can be reduced by 50% compared to detector array 1700. This design can improve the analog signal bandwidth of detector array 1800.

[0196] In addition, with Figure 17A Compared to detector array 1700, in detector array 1800, contact 1710 is arranged downstream of switch network 1706. That is, in Figure 18A In this configuration, a switching network 1706 is arranged between the common output 1818 and the switching element 1712. Simultaneously, the signal output can be directly output from the bus output 1610 to the section circuit 1603 via the switching element 1612. That is, the signal does not need to be output as described above. Figure 17A The switching network 1706 operates as described above. Furthermore, switching element 1612 can still control signals from bus output 1610 and the output of segment circuit 1603, and switching element 1712 can still control the common signal from common output 1818 to the output of segment circuit 1603. Additionally, similar to detector array 1700, when detector array 1800 operates in the second mode, switching element 1712 can still control the combined signal (combined from multiple common signals) from the switching network 1706 to the output of segment circuit 1603. For detector array 1800, when switching element 1612 is closed and switching element 1712 is open, detector array 1800 can operate in the first mode. When switching element 1612 is open and switching element 1712 is closed, detector array 1800 can operate in the second mode. This design maintains the configuration flexibility of detector array 1800.

[0197] In some embodiments, a common output 1818 may be included (e.g., integrated) in a sensing element 1804. In some embodiments, the common output 1818 may be a signal pickup point arranged within the sensing element 1804 in segment 1802. The common output 1818 may include wiring connected to the sensing element 1804.

[0198] In some embodiments, the output bus 1608 may be arranged between the sensing elements of the detector array 1800. For example, the output bus 1608 may include wiring that is not integrated into the individual sensing elements of segment 1802.

[0199] In some embodiments, the segment circuitry 1603 of the detector array 1800 may be included in the segment layer (e.g., Figure 3A In the segment layer 302). In some embodiments, the segment layer may also include at least one of contact 1710, switch network 1706, switch element 1612 or switch element 1712.

[0200] In some embodiments, diagonal inter-element switching elements may be arranged between diagonally adjacent sensing elements in the detector array 1800 to reduce parasitic parameters (e.g., equivalent series resistance) caused when a detection signal travels from one of two diagonally adjacent sensing elements to the other. Figure 19A This is a diagram illustrating another exemplary enhanced switch design of a detector array 1900 according to an embodiment of the present disclosure. The detector array 1900 can be based on... Figure 18A Modification of the detector array 1800. Figure 19A In this configuration, detector array 1900 may include multiple segments, including segment 1902. Segment 1902 includes multiple sensing elements, including sensing elements 1904, 1906, 1908, 1910, and 1912. Figure 19A In section 1902, the sensing elements are arranged in a matrix. The sensing elements of section 1902 can have... Figure 18A The sensing element of section 1802 is similar to that of section 1802. However, the sensing element of section 1902 may have a different electrical connection scheme than that of section 1802.

[0201] Compared to section 1802, each sensing element in section 1902 may include two additional inter-element switching elements in a diagonal direction. The diagonal direction may be between the x-axis and y-axis directions (e.g., tilted at a 45-degree angle thereto). Figure 19B This is a diagram illustrating the sensing element 1904 of segment 1902 of a detector array 1900 according to an embodiment of the present disclosure. Figure 19B In, similar to Figure 18B The sensing element 1804 and sensing element 1904 include a diode 1614, a grounding switch element 1616, a grounding circuit 1617, an element-bus switch element 1618, and element-to-element switch elements 1620 and 1622. For example... Figure 19BAs shown, the inter-element switching elements 1620 and 1622 of the sensing element 1904 can communicatively couple the sensing element 1904 to adjacent sensing elements in the y-axis and x-axis directions, respectively. Figure 19B As shown, the sensing element 1904 may further include inter-element switching elements 1914 and 1916. For example... Figure 19A and Figure 19B As shown, inter-element switching elements 1914 and 1916 can communicatively couple sensing element 1904 to adjacent sensing elements 1912 and 1908 in a first diagonal direction (e.g., from top left to bottom right) and a second diagonal direction (e.g., from top right to bottom left), respectively.

[0202] All sensing elements in segment 1902 can have a similar connection scheme to sensing element 1904. In other words, each sensing element in segment 1902 can include four inter-element switching elements to communicatively couple the sensing element to its eight neighboring sensing elements in the matrix, and there can be only a single inter-element switching element between any two sensing elements. Figure 18A Compared to segment 1802, when the detection signals from sensing elements 1908 and 1912 need to travel to sensing element 1904 (e.g., when sensing elements 1908 and 1912 are grouped together and used in a second mode), additional connections can be formed, and additional paths can exist to connect sensing element 1904 to adjacent sensing elements. Signals can travel diagonally, and the total resistance and inductance can be reduced. For example, between sensing elements 1912 and 1904, signals can travel not only through switching element 1914, but also through other switching elements that connect sensing element 1904 to the output path (e.g., signals can also travel between sensing elements 1912 and 1904 via sensing element 1906 through switching element 1620). This connection scheme reduces parasitic parameters (such as resistance and inductance) introduced in the segment circuitry 1603 of the detector array 1900, and further increases the analog signal bandwidth and pixel rate of the detector array 1900. Additionally, adding a diagonal switch increases the configuration flexibility of the detector array 1900. In the comparative example, connecting two diagonally adjacent sensing elements to each other might require at least one additional sensing element adjacent to both. A diagonal switch eliminates this requirement.

[0203] Although a uniform matrix arrangement of sensing elements has been shown and described, it should be understood that various geometries can also be used. For example, sensing elements can be arranged in an offset pattern (such as a tiled layout). Furthermore, sensing elements themselves can have various shapes and sizes.

[0204] Figure 20 This is a flowchart of an exemplary method 2100 for detecting a beam of charged particles according to embodiments of the present disclosure. Method 2100 can be controlled by a controller of a charged particle inspection system (e.g., Figure 1 The controller 109 of the EBI system 100 in the middle or Figure 9 The controller 904 in the system executes the method. The controller may include a circuit system (e.g., memory and processor) programmed to implement method 2100. For example, the controller may be an internal controller coupled to the charged particle inspection system or an external controller (e.g., ...). Figure 1 Controller 109 or Figure 9 (Controller 904 in the middle). Method 2100 can be used with respect to... Figures 3A to 1 The components, operations, and steps shown and described in Figure 9 correspond to those in Figure 9.

[0205] refer to Figure 20 In some embodiments, method 2100 may be performed by a detector array (e.g., detector array 1800 or 1900). In step 2102, the detector array receives charged particles leaving the wafer (e.g., Figure 2 Any of the secondary charged particle beams 236, 238, and 240 in the array. Charged particles can reach the first segment of the sensing element of the detector array (e.g., Figures 8 to 9 The first segment (or 1902) and the second segment of the sensing element. The first segment and the second segment can be adjacent segments. For example, the first segment and the second segment can be... Figure 14 Sections 321 and 322 in the middle.

[0206] In step 2104, the detector array receives instruction data indicating either a first mode or a second mode for operating the charged particle detector. The first mode may be a "beam spot boundary detection mode," and the second mode may be a "beam spot intensity detection mode," both of which can be applied to detector arrays such as those shown in Figures 16 to 19. In some embodiments, the controller of the detector array may receive the instruction data.

[0207] In step 2106, based on the instruction data, the detector array can perform either a first operation corresponding to a first mode or a second operation corresponding to a second mode. The first operation may include: determining the boundary of a charged particle beam spot projected onto the surface of the detector array. The first operation may include: reading a detection signal output from the sensing element of the first segment (e.g., segment 1802) via bus output 1610. Such detection signals can be read out sequentially. The first operation may include the above reference... Figure 15Steps 1502 and 1504 are discussed. The second operation may include: outputting a signal from at least one of the first or second segments in beam spot intensity detection mode. For example, the combined signal may be a combination of one or more common signals as described with reference to Figures 17 through 19 in beam spot intensity detection mode and by a junction (e.g., Figure 18A The signal output from contact 1710 in the above (reference). The second operation may include the above reference. Figure 15 Steps 1506 to 1532 are discussed.

[0208] In some embodiments, if the instruction data indicates a beam spot boundary detection mode, the detector array can determine a first segment (e.g., Figure 18A The detector array may determine whether segment 1802 includes a group of sensing elements. In some embodiments, the detector array may determine whether a group of sensing elements spans multiple segments. In some embodiments, the grouped sensing elements may be adjacent sensing elements. For example, the first segment may include sensing elements adjacent to a second sensing element (e.g., Figure 18B The first sensing element in the group of sensing elements 1606 (e.g., sensing elements 1606) Figure 18B (Sensing element 1804 in the detector array). If it is determined that the first segment includes the first sensing element and one of the first segment or the second segment includes the second sensing element, the detector array can determine a combined signal by adding the first signal output by the first sensing element to the second signal output by the second sensing element. The detector array can then output the combined signal.

[0209] In some cases, the beam incident on the detector array can form a beam spot contained within a segment. The first segment may include both a first sensing element and a second sensing element. For example, it could be that a secondary charged particle beam strikes the first segment (e.g., Figure 18A Multiple adjacent sensing elements (e.g., in section 1802) Figure 18B The detector array can be coupled to sensing elements 1804 and 1606 in these cases. In these cases, the detector array can form a combined signal by adding the first signal to the second signal. For example, the detector array may include elements communicatively coupled to the first sensing element (e.g., ...). Figure 18A The common output of the sensing element 1804 in the middle (e.g., Figure 18B (Common output 1818 in the image). The detector array can receive a first signal and a second signal, and form a combined signal by adding the first signal and the second signal. In some embodiments, when the first sensing element and the second sensing element are grouped, the detector array can switch elements between elements (e.g., ...). Figure 18B The inter-element switching element 1620 is communicatively connected to the first sensing element (e.g., Figure 18BThe sensing element 1804 in the middle and the second sensing element (e.g., Figure 18B The detector array is located between sensing elements 1606 in the first segment and receives a combined signal at a common output. In some embodiments, the detector array may receive the combined signal at the common output of the first segment.

[0210] In some embodiments, the detector array can receive a combined signal at a common output of another segment. For example, if a secondary charged particle beam strikes a sensing element in a first segment and a sensing element in a second segment, and one of the sensing elements in the first and second segments is connected to a common output of the second segment, the detector array can receive a combined signal from the group of sensing elements at the common output of the second segment. The combined signal can be output from the second segment. In another example, if the secondary charged particle beam strikes only the first segment and there are no other sensing elements outside the first segment, the group of sensing elements associated with the beam spot can consist only of sensing elements from the first segment. In this case, the combined signal can be output from the first segment.

[0211] In some cases, the incident beam on the detector can form a beamspot that largely covers the sensing elements in one segment, while also covering at least some sensing elements in another segment. Sensing elements in other segments can be connected to the sensing elements in one segment via inter-segment switching elements. Signals from sensing elements in other segments can be routed to a common output set within one segment.

[0212] Even when the beam spot is large, the detector array can be configured to accommodate a large beam spot and meet the specified bandwidth requirements. For example, the detector array can be configured to have a certain number and arrangement of sensing elements in each segment, such that even when the beam spot is large, the number of sensing elements grouped together to be associated with the beam spot will not be too large to exceed the analog signal path. Using a switching network can also help improve analog bandwidth by allowing multiple common outputs (of different segments) to be connected. For example, in cases where the large size of the beam spot no longer meets the bandwidth requirements, and the beam spot covers a large number of sensing elements belonging to several different segments, and the sensing elements in those segments connected to the corresponding common outputs of the segments are also covered, a switching network (e.g., switching network 1706) can be used to connect the common outputs to add an additional connection layer to the group of sensing element networks to improve analog bandwidth. Under certain conditions, such as when the beam spot is large enough to at least partially cover multiple segments, and sensing elements directly connected to a common output in the partially covered segments are not covered by the beam spot (but may be very close to those that are covered), such sensing elements can be connected to the group to improve analog bandwidth (if needed). Some prerequisites for connecting these sensing elements to the group may include, for example, that sensing elements directly connected to the common output are not used by another group, and that connecting them to this group will not cause problems (e.g., worsen crosstalk).

[0213] By connecting sensing elements via inter-element switching elements, signals from the sensing elements can be combined where the sensing elements are connected. That is, the outputs of the connected sensing elements can be combined and routed together to downstream portions of the detector array (e.g., common outputs 1718, 1818, or contact 1710).

[0214] Figure 18C An exemplary case of a beam spot covering different segments of a sensing element according to an embodiment of the present disclosure is shown. Figure 18CAs shown, detector array 1800 may include segment 1802 and adjacent segment 1803. A secondary beam spot 1877 may be formed on detector array 1800 and may cover sensing elements in segment 1803 as well as some sensing elements in segment 1802. While some sensing elements in segment 1802 may be covered by beam spot 1877 (e.g., within its boundaries), sensing element 1804, which may be directly connected to common output 1818, may not be covered by beam spot 1877. In any case, sensing element 1804 may be added to the group of sensing elements associated with beam spot 1877. Inter-element switching element 1822 may be closed, and sensing element 1804 may be connected to adjacent sensing element 1805. Signals can be routed from sensing element 1805 and other sensing elements and can be transmitted via sensing element 1804 through common output 1818.

[0215] In this way, at the level of sensing elements, additional sensing elements (besides those that can be covered by the beam spot) can participate in the grouping process as needed to allow signals to be routed to the common output of other segments. At the same time, at the level of the switching network (e.g., switching network 1706), switches can be actuated to connect the common output of different segments.

[0216] In some cases, the beam spot can be large enough to cover a large number of sensing elements that can be included in one or more segments. If the beam spot is too large for the methods described above to achieve the desired analog bandwidth, the beam spot can be subdivided into sub-regions. The group of sensing elements associated with the beam spot can be subdivided into subgroups. Each subgroup can correspond to that sub-region. Subgroups can provide additional analog signal paths and can help achieve the target analog bandwidth.

[0217] In some embodiments, the first sensing element and the second sensing element may be adjacent sensing elements in the first segment along either a horizontal (e.g., x-axis) or a vertical (e.g., y-axis) direction. For example, the first sensing element and the second sensing element may be respectively Figure 19A The sensing elements are 1904 and 1910. In another example, the first and second sensing elements can be respectively... Figure 19A The sensing elements are 1904 and 1906. In some embodiments, the first sensing element and the second sensing element may be adjacent sensing elements in a diagonal direction. For example, the first sensing element and the second sensing element may be respectively... Figure 19A The sensing elements are 1904 and 1908. In another example, the first and second sensing elements can be respectively... Figure 19A The sensing elements are 1906 and 1910.

[0218] In some embodiments, if in Figure 20 If the instruction data received in step 2104 indicates the beam spot intensity detection mode, then the detector array can determine: the first segment (e.g., Figure 18A Does segment 1802 include a first sensing element (e.g., Figure 18B The sensor array may include a sensing element 1804, and may include a second sensing element in either the first or second segment. The first and second sensing elements may output a first signal and a second signal, respectively. Alternatively, if the instruction data received in step 2104 indicates a beam spot boundary detection mode, the detector array may output the first and second signals as independent signals.

[0219] In some embodiments, in beam spot boundary detection mode, for example, the first segment may include a first sensing element (e.g., Figure 18B The sensing element 1804 in the middle) and the second sensing element (e.g., Figure 18B The sensing element 1606 in the middle), and the first segment may include a first output bus (e.g., Figure 18A The output bus 1608 in the array. In order to output the first signal and the second signal, the detector array can switch the first element-bus switching element (e.g., ...). Figure 18B The component in the middle - bus switch component 1618) is communicatively connected to the first sensing element (e.g., Figure 18B The sensing element 1804 in the middle is connected to the first output bus, and the second element-bus switching element (e.g., Figure 18B The detector array (component-bus switch element 1628) is communicatively connected between the second sensing element and the first output bus. The detector array can route a first signal from the first sensing element to the first output bus via the first component-bus switch element, and route a second signal from the second sensing element to the first output bus via the second component-bus switch element. The detector array can then output the first and second signals from the first output bus to a signal processing circuit system (e.g., ...). Figure 18A (Section circuit 1603 in the middle). In some embodiments, in order to output the first signal and the second signal to the signal processing circuit system, the detector array can use a second switching element (e.g., Figure 18A The switching element 1612 is communicatively connected between the first output bus and the signal processing circuit system, and outputs the first signal and the second signal to the signal processing circuit system through the second switching element.

[0220] In beam spot boundary detection mode, each sensing element in the detector can be addressed individually (e.g., sequentially) to achieve electronic scanning on the detector surface. This can be used to acquire a detected image of the beam spot pattern on the detector. Sensing elements can be connected to the bus one at a time. For example, while one sensing element is being connected to the bus, there may be no overlap in the time periods when other sensing elements are being connected to the bus. Figure 18B In this configuration, element-bus switch element 1618 and element-bus switch element 1628 can be actuated one at a time, such that only one of the corresponding sensing elements (1606 or 1804) is connected to the output bus 1608 at a time. Signals from each sensing element can be transmitted independently, and an image of the secondary beam projection can be acquired.

[0221] In some embodiments, pixel binning may be performed. Pixel binning may involve combining signals from more than one sensing element at a time while transmitting signals to an output bus. Pixel binning can be advantageous for obtaining a relatively low-resolution image of the secondary beam projection pattern at a relatively high speed. Pixel binning may include using a switch between the sensing element and the bus to connect more than one sensing element to the bus at a time. In some embodiments, pixel binning may include using an inter-element switching element to connect sensing elements to be picked together. Then, any element-bus switching element connected to the selected sensing element can be actuated to connect the selected sensing element to the bus. It should be understood that many variations such as those described above can be implemented using the detector according to embodiments of this disclosure. Field-programmable detection devices can be designed to have very high configuration flexibility and can be adapted to many different application conditions.

[0222] These embodiments may be further described using the following terms:

[0223] 1. A detector, comprising:

[0224] A set of sensing elements, including a first common output;

[0225] Inter-element switching elements are configured to communicatively couple adjacent sensing elements in a sensing element cluster;

[0226] The output bus is configured to be communicatively coupled to each sensing element in the sensing element set;

[0227] The contacts are configured to be communicatively coupled to a first common output via a first switching element and communicatively coupled to an output bus via a second switching element; and

[0228] A switching network is arranged between a first common output and a first switching element. The switching network includes an inter-unit switching element configured to communicatively couple the first common output to a second common output of another set of sensing elements.

[0229] 2. The detector according to Clause 1, wherein one of the sensing elements in the sensing element set includes a first common output.

[0230] 3. A detector according to any one of clauses 1-2, wherein the second switching element is configured to control the output of a signal from the output bus to a contact.

[0231] 4. The detector according to any one of clauses 1-3 also includes:

[0232] A first element—a bus switch element—is configured to communicatively couple an output bus to a first sensing element in a set of sensing elements; and

[0233] The second element—a bus switch element—is configured to, independently of the first element—a bus switch element—communicatively couple the output bus to a second sensing element in the sensing element set.

[0234] 5. A detector according to any one of clauses 1-4, wherein the inter-element switching element is configured to: communicatively couple at least one sensing element in a sensing element set to a sensing element including a first common output.

[0235] 6. The detector according to Clause 5, wherein the first switching element is configured to control: output a signal from the first common output to the contact.

[0236] 7. A detector according to any one of clauses 5-6, wherein the first switching element and the second switching element are configured to control: outputting either a signal from a first common output or a signal from an output bus to a contact.

[0237] 8. A detector according to any one of clauses 5-7, wherein the switching network is configured to add a signal from a first common output to other signals received from a second common output via inter-group switching elements to form a combined signal.

[0238] 9. The detector according to Clause 8, wherein the first switching element is further configured to control: outputting a combined signal to a contact.

[0239] 10. A detector according to any one of clauses 1-9, wherein the set of sensing elements is arranged in a matrix.

[0240] 11. The detector according to Clause 10, wherein the inter-element switching element includes:

[0241] A first inter-element switching element is configured to communicatively couple a first sensing element to a second sensing element, wherein the first and second sensing elements are arranged along a first direction of the matrix; and

[0242] A second inter-element switching element is configured to communicatively couple a first sensing element to a third sensing element, wherein the first and third sensing elements are arranged along a second direction orthogonal to a first direction.

[0243] 12. The detector according to clause 11, wherein the inter-element switching element further includes a third inter-element switching element configured to communicatively couple the first sensing element to a fourth sensing element, wherein the fourth sensing element is arranged diagonally between the first direction and the second direction.

[0244] 13. The detector according to Clause 12, wherein the inter-element switching element further includes:

[0245] A fourth inter-element switching element is configured to communicatively couple the first sensing element to a fifth sensing element, wherein the fifth sensing element is arranged along a second diagonal direction.

[0246] 14. The detector according to any one of clauses 1-13 further includes:

[0247] The segment circuit system is configured to communicatively couple the sensing element set to the signal processing circuit system.

[0248] 15. A detector according to Clause 14, wherein the contacts are located in a segment circuit system.

[0249] 16. A detector according to any one of clauses 14-15, wherein the first switching element is located in a segment circuit system.

[0250] 17. A detector according to any one of clauses 14-16, wherein the second switching element is located in the segment circuit system.

[0251] 18. A detector according to any one of clauses 14-17, wherein the switching network is in a segment circuit system.

[0252] 19. A detection system, comprising:

[0253] A set of sensing elements, including a first common output;

[0254] Inter-element switching elements are configured to communicatively couple adjacent sensing elements in a sensing element cluster;

[0255] The output bus is configured to be communicatively coupled to each sensing element in the sensing element set;

[0256] The contacts are configured to be communicatively coupled to a first common output via a first switching element and communicatively coupled to an output bus via a second switching element.

[0257] A switching network, disposed between a first common output and a first switching element, includes an inter-set switching element configured to communicatively couple the first common output to a second common output of another set of sensing elements; and

[0258] The signal processing circuitry system, communicatively coupled downstream of the contact, is configured to process signals from the contact.

[0259] 20. The detection system according to Clause 19, wherein one of the sensing elements in the sensing element set includes a first common output.

[0260] 21. A detection system according to any one of clauses 19-20, wherein the second switching element is configured to control: output a signal from the output bus to a contact.

[0261] 22. The testing system according to any one of clauses 19-21 further includes:

[0262] A first element—a bus switch element—is configured to communicatively couple an output bus to a first sensing element in a set of sensing elements; and

[0263] The second element—a bus switch element—is configured to, independently of the first element—a bus switch element—communicatively couple the output bus to a second sensing element in the sensing element set.

[0264] 23. A detection system according to any one of clauses 20-22, wherein an inter-element switching element is configured to: communicatively couple at least one sensing element of a sensing element set to a sensing element including a first common output.

[0265] 24. The detection system according to Clause 23, wherein the first switching element is configured to control: output a signal from the first common output to a contact.

[0266] 25. A detection system according to any one of clauses 23-24, wherein the first switching element and the second switching element are configured to control: outputting either a signal from a common output or a signal from an output bus to a contact.

[0267] 26. A detection system according to any one of clauses 23-25, wherein the switching network is configured to: add a signal from a first common output to other signals received from a second common output via inter-group switching elements to form a combined signal.

[0268] 27. The detection system according to Clause 26, wherein the first switching element is further configured to control: outputting a combined signal to a contact.

[0269] 28. A detection system according to any one of clauses 18-27, wherein the set of sensing elements is arranged in a matrix.

[0270] 29. The detection system according to Clause 28, wherein the inter-component switching element includes:

[0271] A first inter-element switching element is configured to communicatively couple a first sensing element to a second sensing element, wherein the first and second sensing elements are arranged along a first direction of the matrix; and

[0272] A second inter-element switching element is configured to communicatively couple a first sensing element to a third sensing element, wherein the first and third sensing elements are arranged along a second direction orthogonal to a first direction.

[0273] 30. The detection system according to Clause 29, wherein the inter-element switching element further includes a third inter-element switching element configured to communicatively couple the first sensing element to a fourth sensing element, wherein the fourth sensing element is arranged diagonally between the first direction and the second direction.

[0274] 31. The detection system according to Clause 30, wherein the inter-component switching element further includes:

[0275] A fourth inter-element switching element is configured to communicatively couple the first sensing element to a fifth sensing element, wherein the fifth sensing element is arranged along a second diagonal direction.

[0276] 32. The testing system according to any one of clauses 19-31 further includes:

[0277] The segment circuit system is configured to communicatively couple the sensing element set to the signal processing circuit system.

[0278] 33. A detection system according to Clause 32, wherein the contacts are located in a segment circuit system.

[0279] 34. A detection system according to any one of clauses 32-33, wherein the first switching element is located in a segment circuit system.

[0280] 35. A detection system according to any one of clauses 32-34, wherein the second switching element is located in a segment circuit system.

[0281] 36. A detection system according to any one of clauses 32-35, wherein the switching network is in a segment circuit system.

[0282] 37. A charged particle inspection system, comprising:

[0283] A charged particle beam source is configured to generate a primary charged particle beam for sample scanning;

[0284] A detector is configured to receive a secondary charged particle beam exiting from the incident point of a primary charged particle beam, wherein the detector comprises:

[0285] A set of sensing elements, including a first common output;

[0286] Inter-element switching elements are configured to communicatively couple adjacent sensing elements in a sensing element cluster;

[0287] The output bus is configured to be communicatively coupled to each sensing element in the sensing element set;

[0288] The contacts are configured to be communicatively coupled to a first common output via a first switching element and communicatively coupled to an output bus via a second switching element; and

[0289] A switching network is arranged between a first common output and a first switching element. The switching network includes an inter-unit switching element configured to communicatively couple the first common output to a second common output of another set of sensing elements.

[0290] 38. A charged particle inspection system according to Clause 37, wherein one of the sensing elements in the sensing element set includes a first common output.

[0291] 39. A charged particle inspection system according to any one of clauses 37-38, wherein the second switching element is configured to control: output a signal from the output bus to a contact.

[0292] 40. A charged particle inspection system according to any one of clauses 37-39 further includes:

[0293] A first element—a bus switch element—is configured to communicatively couple an output bus to a first sensing element in a set of sensing elements; and

[0294] The second element—a bus switch element—is configured to, independently of the first element—a bus switch element—communicatively couple the output bus to a second sensing element in the sensing element set.

[0295] 41. A charged particle inspection system according to any one of clauses 37-40, wherein an inter-element switching element is configured to: communicatively couple at least one sensing element in a sensing element set to a sensing element including a first common output.

[0296] 42. The charged particle inspection system according to Clause 41, wherein the first switching element is configured to control: output a signal from the first common output to a contact.

[0297] 43. A charged particle inspection system according to any one of clauses 41-42, wherein a first switching element and a second switching element are configured to control: outputting either a signal from a first common output or a signal from an output bus to a contact.

[0298] 44. A charged particle inspection system according to any one of clauses 41-43, wherein the switching network is configured to: add a signal from a first common output to other signals received from a second common output via inter-junction switching elements to form a combined signal.

[0299] 45. A charged particle inspection system according to Clause 44, wherein the first switching element is further configured to control: output a combined signal to a contact.

[0300] 46. ​​A charged particle inspection system according to any one of clauses 37-45, wherein the set of sensing elements is arranged in a matrix.

[0301] 47. The charged particle inspection system according to Clause 46, wherein the inter-component switching element includes:

[0302] A first inter-element switching element is configured to communicatively couple a first sensing element and a second sensing element, wherein the first sensing element and the second sensing element are arranged along a first direction of the matrix; and

[0303] A second inter-element switching element is configured to communicatively couple a first sensing element and a third sensing element, wherein the first sensing element and the third sensing element are arranged along a second direction orthogonal to a first direction.

[0304] 48. The charged particle inspection system according to clause 47, wherein the inter-element switching element further includes a third inter-element switching element configured to communicatively couple a first sensing element to a fourth sensing element, wherein the fourth sensing element is arranged diagonally between the first direction and the second direction.

[0305] 49. The charged particle inspection system according to Clause 48, wherein the inter-component switching element further includes:

[0306] A fourth inter-element switching element is configured to communicatively couple the first sensing element to a fifth sensing element, wherein the fifth sensing element is arranged along a second diagonal direction.

[0307] 50. A charged particle inspection system according to any one of clauses 37-48 further includes:

[0308] The segment circuit system is configured to communicatively couple the sensing element set to the signal processing circuit system.

[0309] 51. A charged particle inspection system according to Clause 50, wherein the contacts are located in a section of the circuit system.

[0310] 52. A charged particle detection system according to any one of clauses 50-51, wherein the first switching element is located in a section circuit system.

[0311] 53. A charged particle detection system according to any one of clauses 50-52, wherein the second switching element is located in a section circuit system.

[0312] 54. A charged particle detection system according to any one of clauses 50-53, wherein the switching network is in a segment circuit system.

[0313] 55. A computer-implemented method, comprising:

[0314] Charged particles from a secondary charged particle beam are received at the first segment of the sensing element of the charged particle detector.

[0315] Receive instruction data indicating either a first mode or a second mode for operating the charged particle detector; and

[0316] Based on the instruction data, one of the following is caused: outputting a combined signal determined using the signal from the first segment corresponding to the second mode, or outputting an independent signal from the sensing element of the first segment corresponding to the first mode.

[0317] 56. The computer-implemented method according to Clause 55, wherein

[0318] The first segment includes a first sensing element and a second element, and

[0319] The output combined signal includes: receiving a first signal from a first sensing element and a second signal from a second sensing element.

[0320] 57. The computer-implemented method according to clause 56, wherein the first sensing element includes a common output, and the output combined signal includes:

[0321] Combine signals through a common output route.

[0322] 58. The computer-implemented method according to Clause 56 or Clause 57 further includes:

[0323] Connect the inter-element switching element between the first sensing element and the second sensing element.

[0324] 59. A computer-implemented method according to any one of clauses 55-58, wherein the charged particle detector includes a second set of sensing elements, and the output combined signal includes:

[0325] The inter-element switching element is connected between the sensing element in the first section and the sensing element in the second section.

[0326] 60. The computer-implemented method according to clause 55, wherein a first segment includes a first sensing element, a second sensing element, and a third sensing element, the first sensing element including a first common output, and the charged particle detector including a second segment of the sensing element, wherein the output combined signal includes:

[0327] Connect the inter-element switching element between the fourth sensing element and the third sensing element in the second section; and

[0328] The signal from the sensing element in the second segment is routed through the first common output.

[0329] 61. The computer-implemented method according to Clause 55, wherein the first sensing element is located on the boundary of the first segment.

[0330] 62. The computer-implemented method according to Clause 55, wherein the first sensing element is located inside the first segment.

[0331] 63. A computer-implemented method according to any one of clauses 55-62, wherein the fourth sensing element of the second segment is located between the fifth sensing element and the third sensing element.

[0332] 64. The computer-implemented method according to clause 60, wherein the fifth sensing element includes a second common output, the method further comprising:

[0333] Connecting the inter-segment switching elements of the switching network between the first segment and the second segment; and

[0334] A combined signal is formed by adding the signal from the first common output to the signal from the second common output.

[0335] 65. The computer-implemented method according to clause 55, wherein the output independent signals include:

[0336] Connect the first element—a bus switch element—between the first sensing element and the first output bus; and

[0337] The second element—a bus switch element—is connected between the second sensing element and the first output bus.

[0338] 66. The computer-implemented method according to Clause 64, wherein the output combined signal comprises:

[0339] Actuates the switching element between the switching network and the signal processing circuit of the first section.

[0340] 67. The computer-implemented method according to Clause 65, wherein a first segment includes a first output bus and a second segment includes a second output bus.

[0341] 68. The computer-implemented method according to Clause 65, wherein the output independent signals include:

[0342] The first element—the bus switch element—is activated sequentially, as is the second element—the bus switch element.

[0343] 69. The computer-implemented method according to Clause 65, wherein the output independent signals include:

[0344] Performing pixel combination includes simultaneously connecting a first element-bus switch element and a second element-bus switch element.

[0345] 70. The computer-implemented method according to Clause 65, wherein the output independent signals include:

[0346] Performing pixel combination includes: when a first element-bus switching element is connected, connecting an inter-element switching element between a first sensing element and a first adjacent sensing element; and when a second element-bus switching element is connected, connecting an inter-element switching element between a second sensing element and a second adjacent sensing element.

[0347] 71. A non-transient computer-readable medium storing an instruction set executable by at least one processor of a device to cause the device to perform a method, the method comprising:

[0348] Charged particles from a secondary charged particle beam are received at the first segment of the sensing element of the charged particle detector.

[0349] Receive instruction data indicating either a first mode or a second mode for operating the charged particle detector; and

[0350] Based on the instruction data, one of the following is caused: outputting a combined signal determined using the signal from the first segment corresponding to the second mode, or outputting an independent signal from the sensing element of the first segment corresponding to the first mode.

[0351] A non-transient computer-readable medium according to embodiments of the present disclosure may be provided, the non-transient computer-readable medium storing information for a controller (e.g., Figure 1 Controller 109 or Figure 9 The processor instructions of the controller 904) are used to execute instructions according to the above. Figure 15 and Figure 20An exemplary flowchart for detecting a charged particle beam. For example, instructions stored in a non-transient computer-readable medium can be executed by the controller's circuitry to perform part or all of method 1500 or 2100. Common forms of non-transient media include, for example, floppy disks, flexible disks, hard disks, solid-state drives, magnetic tape or any other magnetic data storage media, optical disc read-only memory (CD-ROM), any other optical data storage media, any physical media with a perforated pattern, random access memory (RAM), programmable read-only memory (PROM) and erasable programmable read-only memory (EPROM), flash-EPROM or any other flash memory, non-volatile random access memory (NVRAM), caches, registers, any other memory chips or cartridges, and their networked versions.

[0352] It should be understood that the embodiments of this disclosure are not limited to the exact constructions described above and illustrated in the accompanying drawings, and various modifications and changes can be made without departing from its scope. This disclosure has been described in conjunction with various embodiments, and other embodiments of the invention will be apparent to those skilled in the art in light of the specification and practice of the invention disclosed herein. The specification and examples are to be considered exemplary only, and the true scope and spirit of the invention are indicated by the following appended claims.

Claims

1. A detector, comprising: A set of sensing elements, including a first common output; Inter-element switching elements are configured to communicatively couple adjacent sensing elements in the sensing element group; An output bus is configured to communicatively couple to each sensing element in the set of sensing elements; The contacts are configured to be communicatively coupled to the first common output via a first switching element and communicatively coupled to the output bus via a second switching element; as well as A switching network is arranged between the first common output and the first switching element, the switching network including inter-group switching elements configured to communicatively couple the first common output to a second common output of another set of sensing elements.

2. The detector according to claim 1, wherein one sensing element in the set of sensing elements includes the first common output.

3. The detector of claim 1, wherein the second switching element is configured to control the output of a signal from the output bus to the contact.

4. The detector according to claim 1, further comprising: The first element—a bus switch element—is configured to communicatively couple the output bus to a first sensing element in the set of sensing elements; as well as The second element—a bus switch element—is configured to: independently of the first element—a bus switch element, communicatively couple the output bus to a second sensing element in the set of sensing elements.

5. The detector of claim 1, wherein the inter-element switching element is configured to: communicatively couple at least one sensing element of the sensing element set to a sensing element including the first common output.

6. The detector of claim 5, wherein the first switching element is configured to control the output of a signal from the first common output to the contact.

7. The detector of claim 5, wherein the first switching element and the second switching element are configured to control: outputting one of a signal from the first common output or a signal from the output bus to the contact.

8. The detector of claim 5, wherein the switching network is configured to add a signal from the first common output to other signals received from the second common output via the inter-group switching elements to form a combined signal.

9. The detector of claim 8, wherein the first switching element is further configured to control: outputting the combined signal to the contact.

10. The detector of claim 1, wherein the set of sensing elements is arranged in a matrix.

11. The detector of claim 10, wherein the inter-element switching element comprises: A first inter-element switching element is configured to communicatively couple a first sensing element to a second sensing element, wherein the first sensing element and the second sensing element are arranged along a first direction of the matrix; as well as A second inter-element switching element is configured to communicatively couple the first sensing element to a third sensing element, wherein the first sensing element and the third sensing element are arranged along a second direction orthogonal to the first direction.

12. The detector of claim 11, wherein the inter-element switching element further comprises a third inter-element switching element configured to communicatively couple the first sensing element to a fourth sensing element, wherein the fourth sensing element is arranged diagonally between the first direction and the second direction.

13. The detector of claim 12, wherein the inter-element switching element further comprises: A fourth inter-element switching element is configured to communicatively couple the first sensing element to a fifth sensing element, wherein the fifth sensing element is arranged along a second diagonal direction.

14. The detector according to claim 1, further comprising: The segment circuit system is configured to communicatively couple the sensing element set to the signal processing circuit system.

15. The detector of claim 14, wherein the contact is located in the segment circuit system.

16. The detector of claim 14, wherein the first switching element is located in the segment circuit system.

17. The detector of claim 14, wherein the second switching element is located in the segment circuit system.

18. The detector of claim 14, wherein the switching network is located in the segment circuit system.

19. A detection system, comprising: A set of sensing elements, including a first common output; Inter-element switching elements are configured to communicatively couple adjacent sensing elements in the sensing element group; An output bus is configured to communicatively couple to each sensing element in the set of sensing elements; The contacts are configured to be communicatively coupled to the first common output via a first switching element and communicatively coupled to the output bus via a second switching element; A switching network is arranged between the first common output and the first switching element, the switching network including inter-set switching elements configured to communicatively couple the first common output to a second common output of another set of sensing elements; as well as A signal processing circuit system is communicatively coupled downstream of the junction and configured to process signals from the junction.

20. A computer-implemented method, comprising: At the first segment of the sensing element of the detector according to claim 1, charged particles of the secondary charged particle beam are received. Receive instruction data, the instruction data indicating one of a first mode or a second mode for operating the detector; and Based on the instruction data, one of the following is caused: outputting a combined signal corresponding to the second mode, determined using signals from the first segment, or outputting an independent signal corresponding to the first mode, from the sensing element of the first segment.

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