Method for forming a semiconductor thin film

Abstract

The application provides a semiconductor thin film forming method, which comprises the following steps: firstly, a batch of silicon wafers as monitoring wafers are subjected to a low SOURCERF non-Hebase HDP process with gradually changed bias power before a high SOURCERF Hebase HDP process is performed on target silicon wafers to be formed with semiconductor thin films, so that the purpose of avoiding arc in the process cavity of aluminum material to generate aluminum element particle pollutants can be achieved by using the low SOURCERF non-Hebase HDP process, and the bias power of the first HDP process is gradually increased to gradually restore the range of the process cavity to a stable cavity atmosphere required for the subsequent monitoring wafers or target wafers to be subjected to the high SOURCERF Hebase HDP process under the condition that the process cavity does not occur arc phenomenon.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor technology, in particular to a method for forming a semiconductor film. BACKGROUND

[0002] HDP process is one of the commonly used processes in semiconductor integrated circuit manufacturing, which has the characteristics of being able to etch while depositing, having excellent hole filling property, and being able to fill gaps with large aspect ratio at relatively low temperature. In addition, the thin film deposited by HDP process has good quality, the wet etching rate of the thin film without annealing treatment is close to that of thermal silicon oxide, and the impurity content is low, which is beneficial to ensure the working range and stability of the device. Therefore, the existing HDP process is generally used to fill gaps with high aspect ratio, such as the silicon dioxide layer formed by HDP process can be used to fill the intermetallic dielectric layer (PMD), the metal pre-metallization dielectric layer (IMD), and the shallow trench isolation (STI) gap.

[0003] However, with the continuous development of semiconductor technology, after entering the process with large aspect ratio, HDP process using helium as reaction gas (referred to as Hebase HDP process) is widely used. However, Hebase HDP process requires high-power radio frequency source (referred to as high SOURCE RF) to meet the filling requirements. In the actual production process, after the process process cavity is maintained, the Hebase HDP process directly operating on the high SOURCE RF will cause abnormal arc discharge on the surface of the process process cavity made of aluminum material, and further form specific components such as comet-shaped on the surface of the silicon wafer as shown in Fig. 1a or Fig. 1b The specific components such as comet-shaped on the surface of the silicon wafer are Si, O, AL element particle contamination defects, and the excess Al element is obviously bombarded from the surface of the process process cavity to the surface of the silicon wafer. SUMMARY

[0004] The purpose of the present application is to provide a method for forming a semiconductor film to solve the problem of particle contamination on the surface of the silicon wafer caused by the arc on the surface of the process process cavity due to the Hebase HDP process directly operating on the silicon wafer arranged in the process process cavity made of aluminum material.

[0005] To solve the above technical problems, the present application provides a method for forming a semiconductor film, which is applied to high-density plasma HDP process, and the HDP process can use a process process cavity made of aluminum material. Specifically, the forming method can include the following steps:

[0006] providing a preset number of silicon wafers as monitoring wafers, and placing the monitoring wafers on the bearing table in the process process cavity;

[0007] performing a first HDP process with controllable bias power on the monitoring wafers to form a first semiconductor thin film on surfaces of the monitoring wafers one by one under the condition that no arc phenomenon occurs in the process cavity;

[0008] when the number of the monitoring wafers on which the first semiconductor thin film is formed reaches a preset number, performing a second HDP process on the monitoring wafers, wherein the bias power of the second HDP process is higher than that of the first HDP process, and the reaction gas of the second HDP process is also different from that of the first HDP process.

[0009] Further, the step of performing the first HDP process with controllable bias power on the monitoring wafers can include performing the HDP process with the bias power of the radio frequency source gradually increasing from low to high.

[0010] Further, the controllable range of the bias power in the first HDP process can be 0-3000W.

[0011] Further, the step of performing the HDP process with the bias power of the radio frequency source gradually increasing from low to high can include:

[0012] dividing the preset number of silicon wafers into N groups of monitoring wafers, wherein N is greater than or equal to 2;

[0013] starting from the first group of monitoring wafers, gradually increasing the bias power of the HDP process performed by each group of monitoring wafers according to a preset step length, so that each group of monitoring wafers performs the first HDP process under the same bias power.

[0014] Further, the preset step length can be 500-1000W, and exemplarily, the step length can be 500W first and then 1000W.

[0015] Further, the reaction gas of the first HDP process can be at least one of oxygen, argon and silane.

[0016] Further, the reaction gas of the second HDP process can be helium.

[0017] Further, the preset number of the number of the monitoring wafers on which the first semiconductor thin film is formed can be 150-250PCS.

[0018] Further, before the monitoring wafers are placed on the carrier table in the process cavity, the forming method can further include performing an initial maintenance process on the process cavity.

[0019] Further, the initial maintenance process can include at least one cleaning process performed on the inner wall of the process chamber.

[0020] Further, after performing the first HDP process with controllable bias power on the monitoring wafer, and before performing the second HDP process on the monitoring wafer, the forming method can further include:

[0021] Further, performing the first HDP process with unchangeable bias power or the third HDP process with unchangeable bias power on the monitoring wafer again, wherein the third HDP process is different from the second HDP process in reaction gas, and the bias power of the third HDP process is the same as that of the second HDP process.

[0022] Further, the reaction gas of the third HDP process can be at least one of silane or oxygen.

[0023] Further, the aspect ratio of the trench filled by the first HDP process can be less than 1.8.

[0024] Further, the aspect ratio of the trench filled by the second HDP process can be 2.5-3.5.

[0025] Further, the aspect ratio of the trench filled by the third HDP process can be 1.8-2.5.

[0026] Further, after the step of performing the second HDP process on the monitoring wafer, the forming method of the semiconductor thin film provided by the present application can further include the step of:

[0027] detecting whether there is a particle contaminant on the surface of the second semiconductor thin film formed on the surface of the monitoring wafer after performing the second HDP process;

[0028] If not, the monitoring wafer is replaced by a target wafer, and the second HDP process is performed on the target wafer.

[0029] Compared with the prior art, the technical solution provided by the present application has at least one of the following beneficial effects:

[0030] The present application provides a semiconductor thin film forming method, which comprises the following steps: before a high SOURCERF Hebase HDP process is performed on a target silicon wafer to be formed with a semiconductor thin film, a low SOURCERF non-Hebase HDP process (first HDP process) with gradually changed bias power is performed on a batch of preset silicon wafers as monitoring wafers, so that the purpose of avoiding arc generation of aluminum element particle pollutants in an aluminum material process cavity can be achieved by using the low SOURCERF non-Hebase HDP process, and the range of the process cavity can be gradually restored to a stable cavity atmosphere required for subsequent monitoring wafers or target wafers to perform a high SOURCERF Hebase HDP process (second HDP process) by gradually increasing the bias power of the first HDP process, that is, the technical problem of particle pollution on the surface of the silicon wafer caused by the arc of the surface of the process cavity due to the direct high SOURCERF Hebase HDP process performed on the silicon wafer arranged in the aluminum material process cavity in the prior art is solved. BRIEF DESCRIPTION OF DRAWINGS

[0031] Fig. 1a - Fig. 1b A cross-sectional view of the surface arc of the process cavity and the particle pollution defects on the surface of the silicon wafer caused by the direct high SOURCERF Hebase HDP process for forming a semiconductor thin film in the prior art provided in an embodiment of the present application;

[0032] Fig. 2 A flowchart of a semiconductor thin film forming method provided in an embodiment of the present application;

[0033] Fig. 3 A flowchart of a semiconductor thin film forming method provided in another embodiment of the present application. DETAILED DESCRIPTION

[0034] As described in the background, at present, with the continuous development of semiconductor technology, after entering the large aspect ratio process, the HDP process (referred to as Hebase HDP process) using helium as the reaction gas is widely used, but the Hebase HDP process needs a high-power radio frequency source (referred to as high SOURCERF) to meet the filling requirement, and in the actual production process, after the maintenance of the process cavity, the direct high SOURCERF Hebase HDP process will cause the surface of the process cavity made of aluminum material to have an abnormal discharge arc phenomenon, and further form aluminum element particle pollutants on the surface of the silicon wafer, which will cause the yield of the semiconductor wafer to be reduced. Fig. 1a or Fig. 1bThe specific component shown as a comet-like shape is a particle contamination defect of Si, O, AL elements, and the excess Al element is obviously bombarded from the surface of the process chamber to the surface of the silicon wafer.

[0035] To this end, the present application aims to provide a semiconductor thin film forming method to solve the problem of particle contamination on the surface of a silicon wafer caused by arcing on the surface of a process chamber due to a high SOURCERF Hebase HDP process directly performed on a silicon wafer disposed in an aluminum process chamber.

[0036] The present application will be further described in detail with reference to the accompanying drawings and specific embodiments. The advantages and features of the present application will be more apparent from the following description. It should be noted that the drawings are very simplified and use non-precise proportions for the purpose of facilitating and clarifying the description of the embodiments of the present application. In the following description, many specific details are set forth in order to provide a thorough understanding of the present application, but the present application can also be implemented in other ways different from those described herein, and therefore the present application is not limited to the specific embodiments disclosed below.

[0037] As shown in the present application and claims, unless the context clearly indicates otherwise, "one", "a", "an", and / or "the" do not refer to the singular, but can also include the plural. Generally, the terms "comprise" and "include" only indicate the inclusion of the steps and elements explicitly identified, and these steps and elements do not constitute an exclusive list, and the method or device can also include other steps or elements. In the detailed description of the embodiments of the present application, the cross-sectional view of the device structure is partially enlarged without general proportions for the purpose of facilitating the description, and the schematic diagram is only an example, which should not limit the scope of protection of the present application. In addition, the three-dimensional spatial dimensions of length, width and depth should be included in actual production.

[0038] It should be noted that in actual application, different HDP processes with different reaction gases, bias power and source power are required for different aspect ratios of the trenches (through holes) to be filled. In order to clearly and uniformly describe the multiple different HDP processes in the embodiments of the present application, the low SOURCERF non-Hebase HDP process is exemplarily referred to as the first HDP process, the high SOURCERF Hebase HDP process is referred to as the second HDP process, and the high SOURCERF non-Hebase HDP process is referred to as the third HDP process.

[0039] The aspect ratio of the trench filled by the first HDP process can be less than 1.8, for example, 1.7, 1.6, 1.5, etc. The aspect ratio of the trench filled by the second HDP process can be 2.5-3.5, specifically, 2.5, 2.6, 2.7, 2.8, 2.9, 3.0, 3.1, 3.2, 3.3, 3.4 and 3.5. The aspect ratio of the trench filled by the third HDP process can be 1.8-2.5, specifically, 1.8, 1.9, 2.0, 2.1, 2.2, 2.3, 2.4 and 2.5.

[0040] In summary, the general inventive concept of the present application is that the non-Hebase HDP process (the first HDP process) with different bias power for each group of monitoring wafers and gradually increasing bias power can be used to gradually restore the range of the process chamber to the stable chamber atmosphere required for the subsequent monitoring wafers or target wafers to perform the high-SOURCE-RF Hebase HDP process (the second HDP process) while ensuring that no arc phenomenon occurs in the process chamber. Then, the target wafers are processed by the Hebase HDP process. Based on this, the following embodiment one is obtained.

[0041] Embodiment one:

[0042] Specifically, refer to Fig. 2 , Fig. 2 The flowchart of the method of the semiconductor thin film forming method provided in an embodiment of the present application is shown in FIG. 1. The forming method provided by the present application can at least include the following steps: Fig. 2

[0043] Step S201, a preset number of silicon wafers as monitoring wafers are provided, and the monitoring wafers are placed on the carrier table in the process chamber.

[0044] Step S202, the first HDP process with controllable bias power is performed on the monitoring wafers to form a first semiconductor thin film on the surface of each monitoring wafer while ensuring that no arc phenomenon occurs in the process chamber.

[0045] Step S203, when the number of monitoring wafers on which the first semiconductor thin film is formed reaches the preset number, the second HDP process is performed on the monitoring wafers. The bias power of the second HDP process is higher than that of the first HDP process, and the reaction gas of the second HDP process is different from that of the first HDP process.

[0046] ​Specifically, in step S201, a silicon wafer (crystal or semiconductor) to be formed into a semiconductor thin film by the Hebase HDP process with high SOURCERF can be referred to as a target wafer, and a plurality of test wafers subjected to the first HDP process and the second HDP process for adjusting the cavity atmosphere of the process cavity of the aluminum material before the semiconductor process is performed can be referred to as monitoring wafers. Specifically, the plurality of wafers can be divided into groups to form N groups of monitoring wafers, each group containing at least one wafer, where N is greater than or equal to 2.

[0047] As an example, the provided preset number of wafers can be divided into wafer lots, and then further divided in such a way that each group of monitoring wafers contains at least one wafer contained in a wafer lot, thereby obtaining the N groups of monitoring wafers. Each group of monitoring wafers can consist of the same or different wafer lots. For example, assuming that N is 4 (4 groups of monitoring wafers), a wafer lot can contain 12 wafers (of course, other values such as 2, 4, 6, 8, 10, etc. can also be set), and the 4 groups of monitoring wafers can each contain 6 wafers contained in 6 wafer lots. Of course, in other embodiments, the 4 groups of monitoring wafers can each contain the same number of wafers or different numbers of wafers, which is not limited in the present application.

[0048] It can be understood that the wafers or target wafers are all carriers for forming the semiconductor thin film, which can specifically be silicon, germanium, silicon germanium, or silicon carbide, etc., can also be silicon on insulator (SOI) or germanium on insulator (GOI), or can also be other materials such as gallium arsenide, etc. III, V compound.

[0049] It should be noted that before the step S100 of forming a semiconductor thin film by the HDP process provided in the present application, an initial maintenance process can be performed on the process cavity utilized by the HDP process. For example, the initial maintenance process can specifically include at least one cleaning process on the inner wall of the process cavity. For example, the inner wall of the process cavity of the aluminum material can be subjected to multiple wet cleaning, or a cavity protection film can be formed on the inner wall of the process cavity of the aluminum material before or after the step of subjecting the inner wall of the process cavity of the aluminum material to multiple wet cleaning, and other steps for maintaining the process cavity of the HDP process.

[0050] Specifically, in step S202, the controllable range of the bias power in the first HDP process is exemplarily 0-3000 W, i.e., can be gradually increased from 0 W to 3000 W. The reaction gas of the first HDP process is at least one of oxygen, argon and argon.

[0051] As an example, a preset number of silicon wafers can be divided into N groups of monitoring wafers, where N is greater than or equal to 2, for example, can be divided into 2 groups, 3 groups, 4 groups, etc.; then, starting from the first group of monitoring wafers, the bias power of the HDP process performed by each group of monitoring wafers is sequentially increased by a preset step, so that each group of monitoring wafers performs the first HDP process at a corresponding bias power. Wherein, the preset step is: 500-1000 W, i.e., starting from the first group of monitoring wafers, the bias power of multiple groups of monitoring wafers is gradually increased by an increment of 500 W.

[0052] Specifically, after the initial maintenance of the process process chamber of the aluminum material, the preset number of silicon wafers can be divided into 4 groups (the grouping method is specifically referred to the embodiment corresponding to step S201), then, after placing the first group of monitoring wafers on the support table in the process process chamber, adjusting the bias power of the radio frequency power source in the process process chamber for exciting the introduced reaction gas to ionize into plasma to 0 W, and performing a non-Hebase HDP process on the first group of monitoring wafers with oxygen or argon or silane as the reaction gas; then, after placing the second group of monitoring wafers on the support table in the process process chamber and increasing the bias power of the radio frequency power source to 500 W, performing the non-Hebase HDP process, and sequentially increasing the bias power of the radio frequency power source to 1500 W and 2500 W until the end condition of this test is reached, the first HDP process with controllable bias power can be ended. Exemplarily, the bias power corresponding to the subsequent different groups of monitoring wafers can be sequentially increased to 1500 W and 2500 W.

[0053] It should be noted that the inventive concept of the present application is to solve the problem that the particles generated by abnormal discharge of the process chamber due to too high bias power or source power of the Hebase HDP process with high SOURCERF may contaminate the silicon wafers, and the embodiments of the present application only exemplarily show the problem of aluminum element / particle contamination when the process chamber is a process chamber of aluminum material, and in other embodiments, the problem of particle contamination of other elements may also occur for process chambers of other materials.

[0054] Specifically, in step S203, the reaction gas of the second HDP process is helium, and the number of the monitoring pieces on which the first semiconductor thin film is formed on the detection surface reaches a preset number in the range of 150-250 PCS, i.e., 150 PCS, 160 PCS, 170 PCS, 180 PCS, 190 PCS, 200 PCS, 210 PCS, 220 PCS, 230 PCS, 240 PCS and 250 PCS, and preferably, the preset number is 200 PCS. Of course, the preset number can also be other values, such as 25 PCS, 30 PCS and 50 PCS, etc.

[0055] Specifically, when the bias power of the non-Hebase HDP process (the first HDP process) is increased for the monitoring pieces in the groups, it is necessary to detect whether the process process cavity atmosphere reaches the condition for the Hebase HDP process (the second HDP process) in time, and when the condition is reached, the monitoring pieces or target wafers are subjected to the Hebase HDP process with high SOURCERF, and then it is detected whether the semiconductor thin film formed by the Hebase HDP process with high SOURCERF meets the design requirements.

[0056] As an example, the present application provides a specific way of determining whether the process process cavity atmosphere reaches the condition for the Hebase HDP process (the second HDP process), i.e., detecting whether there are particle contaminants on the surface of the second semiconductor thin film formed on the monitoring pieces after the second HDP process is performed.

[0057] If not, the monitoring pieces can be replaced by target wafers in step S204, and the target wafers are subjected to the second HDP process, so as to finally perform the Hebase HDP process with high SOURCERF on the target wafers.

[0058] In an optional solution, other parameters can also be detected to determine whether the process process cavity atmosphere reaches the condition for the Hebase HDP process (the second HDP process), such as detecting whether the thickness of the second semiconductor thin film formed on the monitoring pieces after the second HDP process is performed reaches the design requirements, or detecting the film uniformity of the second semiconductor thin film formed on the monitoring pieces after the second HDP process is performed, etc.

[0059] The implementation of one of the above solutions and Fig. 2It can be known that the first HDP process with gradually increased bias power is performed on the preset number of silicon wafers (monitoring wafers) placed in the process cavity made of aluminum, and then the Hebase HDP process (second HDP process) with high SOURCERF is performed on the monitoring wafers, and then the Hebase HDP process with high SOURCERF is performed on the target wafers for formal operation. In other embodiments provided by the present application, after the first HDP process with gradually increased bias power is performed on the preset number of silicon wafers (monitoring wafers) placed in the process cavity made of aluminum, the first HDP process with unchanged bias power or the third HDP process with unchanged bias power is performed on the monitoring wafers again, and then the Hebase HDP process with high SOURCERF is performed on the target wafers for formal operation. Based on this, the following embodiment two can be obtained.

[0060] Embodiment two:

[0061] For details, please refer to Fig. 3 , Fig. 3 The flowchart of the method of the semiconductor thin film forming method provided in another embodiment of the present application is shown in Fig. 3 The forming method provided by the present application can at least include the following steps:

[0062] Step S301, providing a preset number of silicon wafers as monitoring wafers, and placing the monitoring wafers on the bearing table in the process cavity.

[0063] Step S302, performing the first HDP process with controllable bias power on the monitoring wafers to form the first semiconductor thin film on the surface of each monitoring wafer in sequence under the condition that the arc phenomenon does not occur in the process cavity.

[0064] Step S303, performing the first HDP process with unchanged bias power or the third HDP process with unchanged bias power on the monitoring wafers again; wherein the reaction gas of the third HDP process is different from that of the second HDP process, the bias power of the third HDP process is the same as that of the second HDP process, and the reaction gas of the third HDP process is at least one of silane or oxygen.

[0065] Step S304, when it is detected that the number of monitoring wafers after the HDP process of step S303 is performed reaches a preset number, performing the second HDP process on the monitoring wafers, wherein the bias power of the second HDP process is higher than that of the first HDP process, and the reaction gas of the second HDP process is different from that of the first HDP process.

[0066] It should be noted that the difference between the embodiment one and the embodiment two is that the embodiment two adds a low SOURCERF non-He base HDP process or a high SOURCERF non-He base HDP process with unchanged bias power to the monitoring wafer before the high SOURCERF He base HDP process, i.e., the second HDP process, of the monitoring wafer, and other processes are the same as the embodiment one, for example, before the first HDP process with controllable bias power of the monitoring wafer in step S302 is performed, the process cavity used in the HDP process can be initially maintained, i.e., the inner wall of the aluminum process cavity is cleaned by wet cleaning for multiple times, or a cavity protection film is formed on the inner wall of the aluminum process cavity before or after the step of cleaning the inner wall of the aluminum process cavity by wet cleaning for multiple times, and other steps for maintaining the process cavity of the HDP process.

[0067] It can be understood that the preset number of the monitoring wafers after the HDP process of step S303 is detected in step S304 can also be set to 150-250 PCS, i.e., 150 PCS, 160 PCS, 170 PCS, 180 PCS, 190 PCS, 200 PCS, 210 PCS, 220 PCS, 230 PCS, 240 PCS and 250 PCS, and preferably, the preset number is 200 PCS. Of course, the preset number can also be other values, and the specific number can be determined according to actual conditions, which is not limited in the present application.

[0068] In summary, the application provides a semiconductor thin film forming method, which comprises the following steps: before a high SOURCERF Hebase HDP process is performed on a target silicon wafer to be formed with a semiconductor thin film, a low SOURCERF non-Hebase HDP process (first HDP process) with gradually changed bias power is performed on a batch of preset silicon wafers as monitoring wafers, so that the aluminum material process chamber is prevented from generating arc to produce aluminum element particle pollutants, and the bias power of the first HDP process is gradually increased to gradually restore the process chamber to a stable atmosphere required for the subsequent monitoring wafers or target wafers to perform a high SOURCERF Hebase HDP process (second HDP process), thereby solving the technical problem that the surface of the process chamber generates arc to cause particle pollution on the surface of the silicon wafer due to the fact that the silicon wafer arranged in the aluminum material process chamber directly performs a high SOURCERF Hebase HDP process.

[0069] It should be noted that in the embodiments of the application provided by the application, an electronic device is also provided, which includes a processor, a communication interface, a memory and a communication bus, wherein the processor, the communication interface and the memory complete mutual communication through the communication bus, the memory is used to store a computer program, and the processor is used to execute the program stored on the memory to realize the semiconductor thin film forming method provided by the embodiments of the application.

[0070] Specifically, the semiconductor thin film forming method provided by the application can be applied to a high-density plasma HDP process, the HDP process adopts an aluminum material process chamber, and the forming method can include the following steps:

[0071] A preset number of silicon wafers as monitoring wafers are provided, and the monitoring wafers are placed on a bearing table in the process chamber.

[0072] A first HDP process with controllable bias power is performed on the monitoring wafers to form first semiconductor thin films on the surfaces of the monitoring wafers in sequence under the condition that the process chamber does not generate arc.

[0073] When the number of monitoring wafers on which the first semiconductor thin films are formed reaches the preset number, a second HDP process is performed on the monitoring wafers, wherein the bias power of the second HDP process is higher than that of the first HDP process, and the reaction gas of the second HDP process is different from that of the first HDP process.

[0074] In addition, the processor executes the program stored on the memory to implement the semiconductor thin film forming method, and other implementation manners of the semiconductor thin film forming method are the same as those mentioned in the foregoing method embodiment part, and thus will not be repeated here.

[0075] In yet another embodiment of the present application, a computer readable storage medium is provided, which stores instructions, when executed on a computer, cause the computer to perform the semiconductor thin film forming method of any of the foregoing embodiments.

[0076] In the foregoing embodiments, the implementation can be achieved entirely or partially by software, hardware, firmware, or any combination thereof. When implemented by software, the implementation can be achieved entirely or partially in the form of a computer program product. The computer program product includes one or more computer instructions. When loaded and executed on a computer, the computer program instructions entirely or partially generate the processes or functions described in the embodiments of the present application. The computer can be a general-purpose computer, a special-purpose computer, a computer network, or other programmable devices. The computer instructions can be stored in a computer readable storage medium or transferred from one computer readable storage medium to another computer readable storage medium, for example, the computer instructions can be transferred from one website, computer, server, or data center to another website, computer, server, or data center through wired (such as coaxial cable, optical fiber, digital subscriber line) or wireless (such as infrared, wireless, microwave, etc.) manner. The computer readable storage medium can be any available medium accessible by a computer or a data storage device such as a server, data center, etc. integrated with one or more available media. The available media can be magnetic media (such as floppy disk, hard disk, magnetic tape), optical media, or semiconductor media (such as solid state disk), etc.

[0077] It should be noted that, in this document, the terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply that there is any such actual relationship or order between the entities or operations. Moreover, the terms "include", "contain" or any other variants thereof are intended to cover non-exclusive inclusion, so that the processes, methods, articles or devices including a series of elements not only include those elements, but also include other elements not explicitly listed or inherent to such processes, methods, articles or devices. Without more limitations, the element defined by the statement "including a" does not exclude the presence of other identical elements in the process, method, article or device including the element.

[0078] Various embodiments are described in related manner in the specification, and the same or similar parts among various embodiments can be referred to each other. Each embodiment focuses on the difference from other embodiments. In particular, for the device, electronic device, and computer-readable storage medium embodiments, since they are basically similar to the method embodiments, the description is relatively simple, and the relevant parts can be referred to the part of the method embodiment.

[0079] The above only describes the preferred embodiments of the present application, and is not intended to limit the protection scope of the present application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A method of forming a semiconductor film, characterized by, The application is applied to high-density plasma (HDP) process, and the HDP process adopts a process cavity made of aluminum. The forming method comprises the following steps: providing a plurality of silicon wafers as monitoring wafers, and placing the monitoring wafers on a bearing table in the process cavity; performing a first HDP process with controllable bias power on the monitoring wafers to form a first semiconductor film on the surfaces of the monitoring wafers in sequence under the condition that arc phenomenon does not occur in the process cavity; when the number of the monitoring wafers on which the first semiconductor film is formed reaches a preset number, performing a second HDP process on the monitoring wafers, wherein the first HDP process is a non-Hebase HDP process with low SOURCERF and gradually increasing bias power from low to high, the second HDP process is a Hebase HDP process with high SOURCERF, the bias power of the second HDP process is higher than that of the first HDP process, and the reaction gas of the second HDP process is different from that of the first HDP process.

2. The method for forming a semiconductor thin film according to claim 1, wherein The controllable range of the bias power in the first HDP process is 0-3000 W.

3. The method for forming a semiconductor thin film according to claim 2, wherein The step of performing the HDP process with gradually increasing bias power of the radio frequency source on the monitoring wafers comprises: dividing the preset number of silicon wafers into N groups of monitoring wafers, wherein N is greater than or equal to 2; starting from the first group of monitoring wafers, sequentially increasing the bias power of the HDP process performed on each group of monitoring wafers by a preset step length, so that each group of monitoring wafers performs the first HDP process at a corresponding bias power.

4. The method for forming a semiconductor thin film according to claim 3, wherein The preset step length is 500-1000 W.

5. The method for forming a semiconductor thin film according to claim 1, wherein The reaction gas of the first HDP process is at least one of oxygen, argon and silane.

6. The method for forming a semiconductor thin film according to claim 1, wherein The reaction gas of the second HDP process is helium.

7. The method for forming a semiconductor thin film according to claim 1, wherein The preset number of the monitoring wafers on which the first semiconductor film is formed ranges from 150 to 250 PCS.

8. The method of forming a semiconductor film according to claim 1, wherein Before placing the monitoring wafers on the bearing table in the process cavity, the forming method further comprises performing an initial maintenance process on the process cavity.

9. The method of forming a semiconductor film according to claim 8, wherein The initial maintenance process comprises at least one cleaning process on the inner wall of the process cavity.

10. The method of forming a semiconductor film according to claim 1, wherein After performing the first HDP process with controllable bias power on the monitoring wafers, and before performing the second HDP process on the monitoring wafers, the forming method further comprises: performing the first HDP process with unchanged bias power or a third HDP process with unchanged bias power on the monitoring wafers again, wherein the reaction gas of the third HDP process is different from that of the second HDP process, and the bias power of the third HDP process is the same as that of the second HDP process.

11. The method of forming a semiconductor film according to claim 10, wherein The reaction gas of the third HDP process is at least one of silane or oxygen.

12. The method of forming a semiconductor film according to claim 11, wherein After the step of performing the second HDP process on the monitoring wafers, the forming method further comprises: detecting whether there are particle contaminants on the surface of the second semiconductor film formed on the surface of the monitoring wafer after the second HDP process is performed; If not, the monitor wafer is replaced with a target wafer and the second HDP process is performed on the target wafer.

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