A method for preparing a trigonal selenium thin film and its solar cell

By preparing trigonal selenium thin films using a high-temperature secondary sublimation method, the challenges of nucleation growth and lattice orientation control were solved, resulting in a significant improvement in the performance of selenium-based solar cells.

CN115939234BActive Publication Date: 2026-05-26JINAN UNIVERSITY
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
JINAN UNIVERSITY
Filing Date
2021-08-26
Publication Date
2026-05-26

AI Technical Summary

Technical Problem

Existing technologies make it difficult to prepare high-quality trigonal selenium thin films, resulting in poor performance of selenium-based solar cells. This is mainly because it is difficult to achieve a single phase and dense grain arrangement through nucleation growth and lattice orientation control.

Method used

A high-temperature secondary sublimation method was used to deposit trigonal selenium thin films at a substrate growth temperature higher than the solid-gas phase transition temperature of selenium. Nucleation growth and lattice orientation were controlled by adjusting the growth temperature, time, and atmosphere to prepare high-quality trigonal selenium thin films.

Benefits of technology

The preparation of high-quality trigonal selenium thin films has been achieved, which improves the photoelectric conversion efficiency and stability of selenium-based solar cells and breaks through the technical framework of traditional low-temperature deposition and secondary recrystallization.

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Abstract

This invention discloses a method for preparing trigonal selenium thin films and a solar cell thereof. The invention utilizes thermal evaporation or sublimation to deposit trigonal selenium thin films at a substrate growth temperature higher than the phase transition temperature between the solid and gas phases of selenium, i.e., under conditions of secondary sublimation. During the preparation process, the substrate growth temperature is 190℃–210℃, the selenium source temperature is 210–240℃, and the selenium thin film growth time is 10s–10min. This invention is the first to propose a method for directly preparing high-quality trigonal selenium based on a high-temperature secondary sublimation process, eliminating the need for a secondary recrystallization process. By controlling the growth temperature, growth time, and growth atmosphere, the nucleation growth, grain growth, and lattice orientation of the selenium thin film can be controlled, resulting in a high-quality trigonal selenium thin film with a single phase, controllable lattice orientation, and dense grain arrangement, thereby improving the performance of selenium-based solar cell devices.
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