A substrate and reaction chamber structure

Abstract

The present invention relates to the field of semiconductor equipment technology, and specifically to a substrate and a reaction chamber structure. The present invention provides a substrate, which is cylindrical, one surface of the substrate is a heat absorbing surface, a circular hole penetrating the substrate is provided on the heat absorbing surface of the substrate, the circular hole is coaxially arranged with the substrate, a plurality of holes are provided on the heat absorbing surface, the holes are small circular holes, the small circular holes are evenly arranged, and a plurality of concentric circles concentric with the substrate are provided on the heat absorbing surface, and a plurality of circular holes are evenly arranged on each concentric circle. In this way, part of the heat radiated from the heating disk to the substrate is absorbed and reflected multiple times by the top surface of the substrate, and the other part of the heat is completely absorbed by the hole body and the overall temperature of the substrate is increased by heat conduction, thereby improving the thermal insulation effect of the chamber and greatly reducing the unevenness of the film thickness on each processed substrate.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and in particular to a substrate and a reaction chamber structure. Background Art

[0002] like Figure 1 and Figure 2 As shown, the existing substrate is cylindrical, the substrate is an aluminum substrate, a circular hole for the heating plate to pass through is opened at the center of the substrate, and the upper surface is smooth. The substrate is installed in the chamber, the exhaust ring is close to the substrate, and the heating plate and the spray plate are installed in sequence above the substrate;

[0003] In the actual process, part of the heat generated by the heater will be transferred to the process chamber. The reflectivity of the aluminum substrate is high, and part of the heat will be quickly dissipated around the heater through reflection from the substrate surface. This will not only make the process chamber take too long to reach the temperature required by the process, resulting in low production efficiency, but also the unsuitable chamber temperature environment will lead to poor film thickness uniformity. Summary of the invention

[0004] (I) The problem to be solved by the present invention is that the reflectivity of the existing aluminum substrate is high, and part of the heat reflected by the substrate surface will be quickly dissipated around the heater, which will not only make the process chamber take too long to reach the temperature required by the process, resulting in low production efficiency, but also the unsuitable chamber temperature environment will lead to poor film thickness uniformity.

[0005] (II) Technical solution

[0006] A substrate, the substrate is cylindrical, one surface of the substrate is a heat absorbing surface, a circular hole penetrating the substrate is opened on the heat absorbing surface of the substrate, and the circular hole is coaxially arranged with the substrate;

[0007] A plurality of holes are provided on the heat absorbing surface.

[0008] According to an embodiment of the present invention, the hole bodies are small circular holes, and the small circular holes are evenly arranged.

[0009] According to an embodiment of the present invention, the heat absorption surface is provided with a plurality of concentric circles concentric with the substrate, each of the concentric circles is provided with a plurality of circular holes evenly arranged, and the distance between two adjacent concentric circles is the same.

[0010] According to an embodiment of the present invention, the hole body is an annular hole, a plurality of the hole bodies are coaxially arranged with the substrate, and the distance between two adjacent annular holes is the same;

[0011] The annular hole is divided into two parts, namely an upper annular hole and a lower annular hole. The upper annular hole is arranged above the lower annular hole and is communicated with the lower annular hole.

[0012] According to one embodiment of the present invention, the inner diameter of the lower annular hole is smaller than the inner diameter of the upper annular hole, and the outer diameter of the lower annular hole is larger than the outer diameter of the upper annular hole.

[0013] According to one embodiment of the present invention, the substrate comprises a lower plate body and an upper plate body, the upper plate body is coaxially arranged with the lower plate body, the diameter of the upper plate body is smaller than the diameter of the lower plate body, and the upper surface of the upper plate body is a heat absorption surface;

[0014] The hole body extends from the upper surface of the upper plate body to the interior of the lower plate body.

[0015] According to one embodiment of the present invention, a support body is integrally formed on the lower surface of the lower plate, and the support body is coaxially arranged with the lower plate;

[0016] The outer diameter of the support body is the same as that of the lower disk body, and the inner diameter of the support body is greater than the outer diameter of the upper disk body.

[0017] A reaction chamber structure, comprising the above-mentioned substrate, body, heating plate, spray plate, chamber cover plate and exhaust ring;

[0018] A chamber is formed in the body, and the spray plate, the heating disk and the substrate are sequentially installed in the chamber, the spray plate, the heating disk and the substrate are coaxially arranged, and the substrate is arranged on the inner bottom wall of the chamber;

[0019] A cavity is formed between the substrate and the heating plate, and the total surface area of ​​the plurality of holes accounts for 0.6% of the surface area of ​​the cavity.

[0020] According to one embodiment of the present invention, the diameter of the substrate is smaller than the diameter of the chamber, and an annular cavity is formed between the substrate and the inner wall of the chamber;

[0021] The pumping ring is in the shape of a circular plate, the lower surface of the pumping ring is placed on the base plate, and the pumping ring covers the annular cavity.

[0022] According to an embodiment of the present invention, the heat absorbing surface of the substrate faces the shower plate, and the upper surface of the pumping ring is on the same horizontal plane as the heat absorbing surface of the substrate.

[0023] Beneficial effects of the present invention:

[0024] The present invention provides a substrate, which is cylindrical, one surface of the substrate is a heat absorbing surface, a circular hole penetrating the substrate is provided on the heat absorbing surface of the substrate, the circular hole is coaxially arranged with the substrate, and a plurality of holes are provided on the heat absorbing surface. This substrate increases the heat conduction area, so that more heat emitted by the heater is directed to the substrate, reducing heat loss and increasing the chamber temperature.

[0025] The present invention provides a reaction chamber structure, including the substrate, body, heating plate, spray plate, chamber cover plate and exhaust ring; a chamber is formed in the body, and the spray plate, heating plate and substrate are installed in the chamber in sequence, the spray plate, heating plate and substrate are coaxially arranged, and the substrate is arranged on the inner bottom wall of the chamber; a cavity is formed between the substrate and the heating plate, and the sum of the surface areas of multiple holes accounts for 0.6% of the surface area of ​​the cavity. Due to the installation of this substrate, part of the heat radiated from the heating plate to the substrate is absorbed and reflected multiple times by the top surface of the substrate, and the other part of the heat is completely absorbed by the holes and the overall temperature of the substrate is increased through heat conduction, thereby improving the heat preservation effect of the chamber and greatly reducing the unevenness of the film thickness on each processed substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the specific implementation methods of the present invention or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0027] Figure 1 is an internal diagram of an existing reaction chamber;

[0028] Figure 2 is a structural diagram of an existing substrate;

[0029] Figure 3 A structural diagram of a substrate provided in Embodiment 1 of the present invention;

[0030] Figure 4 This is a structural diagram of a substrate provided in an embodiment of the present invention after being split into half;

[0031] Figure 5 A structural diagram of a substrate provided in Embodiment 2 of the present invention after being split in half;

[0032] Figure 6 A cross-sectional view of a substrate provided in Embodiment 2 of the present invention;

[0033] Figure 7 This is a diagram of the interior of the reaction chamber after the substrate of Example 1 of the present invention is installed.

[0034] Icon: 1-lower plate; 101-support body; 2-upper plate; 201-small round hole; 202-upper ring hole; 203-lower ring hole; 3-main body; 4-exhaust ring; 5-heating plate; 6-spray plate; 301-cavity cover plate. DETAILED DESCRIPTION

[0035] The technical solution of the present invention will be clearly and completely described below in conjunction with the embodiments. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0036] like Figure 1 and Figure 2 As shown, the existing substrate is cylindrical, the substrate is an aluminum substrate, a circular hole for the heating plate to pass through is opened at the center of the substrate, and the upper surface is smooth. The substrate is installed in the chamber, the exhaust ring 4 is close to the substrate, and the heating plate 5 and the spray plate 6 are installed above the substrate in sequence;

[0037] In the actual process, part of the heat generated by the heater will be transferred to the process chamber. The reflectivity of the aluminum substrate is high, and part of the heat will be quickly dissipated around the heater through reflection from the substrate surface. This will not only make the process chamber take too long to reach the temperature required by the process, resulting in low production efficiency, but also the unsuitable chamber temperature environment will lead to poor film thickness uniformity.

[0038] Embodiment 1:

[0039] like Figure 3 and Figure 4 As shown, a substrate is provided, the substrate is cylindrical, and the substrate comprises a lower plate body 1 and an upper plate body 2, the upper plate body 2 is coaxially arranged with the lower plate body 1 and is integrally formed, the diameter of the upper plate body 2 is smaller than the diameter of the lower plate body 1, and the upper surface of the upper plate body 2 is a heat absorbing surface;

[0040] A plurality of holes are provided on the heat absorption surface, and the holes extend from the upper surface of the upper plate body 2 to the interior of the lower plate body 1. A circular hole penetrating the substrate is provided on the heat absorption surface of the substrate, and the circular hole is coaxially arranged with the substrate, and the heating plate passes through the circular hole;

[0041] In this embodiment, the hole body is a small circular hole 201, and there are multiple concentric circles on the heat absorption surface that are concentric with the substrate. Multiple small circular holes 201 are evenly arranged on each concentric circle, and the distance between two adjacent concentric circles is the same.

[0042] Specifically, there are 270 small circular holes 201 in total, each of which has a diameter of 2.5 mm and a depth of 90 mm, and the diameter of the substrate is 190 mm.

[0043] Optionally, a support body 101 is integrally formed on the lower surface of the lower disk body 1. The support body 101 is coaxially arranged with the lower disk body 1. The outer diameter of the support body 101 is the same as that of the lower disk body 1. The inner diameter of the support body 101 is larger than the outer diameter of the upper disk body 2. The support body 101 serves as a supporting substrate.

[0044] In this embodiment, the substrate is an aluminum plate, and a coating is added to the upper surface of the aluminum plate to increase the blackness, increase the heat absorption rate, and improve the thermal insulation effect.

[0045] Optionally, the substrate may be any one of a copper plate, a steel plate or a silver plate, and a coating is also added to the upper surface of the substrate to improve the blackness.

[0046] A reaction chamber structure is also provided, such as Figure 7 As shown, it includes the substrate, the body 3, the heating plate 5, the spray plate 6, the cavity cover plate 301 and the exhaust ring 4, wherein the diameter of the heating plate 5 is 300 mm.

[0047] A chamber is formed in the body 3, and a spray plate 6, a heating plate 5 and a substrate are sequentially installed in the chamber. The spray plate 6, the heating plate 5 and the substrate are coaxially arranged, and the substrate is arranged on the inner bottom wall of the chamber;

[0048] A cavity is formed between the substrate and the heating plate 5, the diameter of the substrate is smaller than the diameter of the chamber, an annular cavity is formed between the substrate and the inner wall of the chamber, and the exhaust ring 4 is in the shape of a circular ring plate;

[0049] Since the diameter of the upper plate body 2 is smaller than that of the lower plate body 1, a ring surface is formed on the upper surface of the lower plate body 1, and the lower surface of the air pumping ring 4 is placed on the ring surface. The outer side surface of the air pumping ring 4 contacts the inner side surface of the chamber, so that the air pumping ring 4 covers the ring cavity.

[0050] The heat absorbing surface of the substrate faces the shower plate 6 , and the upper surface of the exhaust ring 4 is at the same level as the heat absorbing surface of the substrate.

[0051] Specific: The calculation formula for radiation heat loss is as follows:

[0052]

[0053] Among them, the radiation coefficient δ = 5.67e-8W / m^2 / K^4, which is a fixed value

[0054] Emissivity ε1 = 0.3, ε2 = 0.65;

[0055] T1 refers to the temperature of the heating plate, and T2 refers to the temperature of the substrate;

[0056] A1 refers to the heating area of ​​the heating plate; A2 refers to the upper surface area of ​​the substrate.

[0057] Under the condition that the reaction chamber structure remains unchanged, the thermal radiation loss of the two substrates is calculated. Figure 2 The conventional substrate shown, the heat radiation loss is recorded as Q1, and the other is the substrate in the first embodiment, the heat radiation loss is recorded as Q2;

[0058] In Q1, the diameter of the heating plate K = 300 mm, and the diameter of the substrate D = 190 mm;

[0059] A1=πK 2 / 4;

[0060] A2=πD 2 / 4;

[0061] For Q2:

[0062] Heating plate diameter K = 300 mm, substrate diameter D = 190 mm;

[0063] A1=πK 2 / 4;

[0064] The base plate structure has a different base plate area due to the addition of small circular holes:

[0065] A2=πD 2 / 4-N*S1+N*S2

[0066] in:

[0067] Hole top area S1 = πφ 2 / 4;

[0068] Hole internal surface area S2 = πφ 2 / 4+2πφH;

[0069] Number of holes N = 270;

[0070] Hole diameter φ = 2.5 mm;

[0071] Hole depth H = 90 mm;

[0072] In both cases, the heating plate temperature is T1 and the base plate temperature is T2 and remains unchanged;

[0073] Therefore, it can be seen from the formula that for Q2 / Q1 it is just the ratio of the surface area on the substrate;

[0074] The calculation shows that Q2 / Q1=0.73, which means that the heat loss is reduced by 27%.

[0075] Therefore, part of the heat radiated from the heating disk 5 to the substrate is absorbed multiple times (30%) and reflected (70%) by the top surface of the substrate, and the other part of the heat is completely absorbed by the small circular hole 201 and the overall temperature of the substrate is increased through heat conduction, thereby improving the thermal insulation effect of the chamber and greatly reducing the unevenness of the film thickness on each processed substrate.

[0076] The heat conduction area and heat absorption are increased, and the heat emitted by the heater is directed more toward the substrate, reducing heat loss and increasing the chamber temperature.

[0077] Embodiment 2:

[0078] like Figure 5 and Figure 6 As shown, the second embodiment of the present invention provides a substrate, which is cylindrical and includes a lower plate body 1 and an upper plate body 2. The upper plate body 2 is coaxially arranged with the lower plate body 1 and is integrally formed. The diameter of the upper plate body 2 is smaller than the diameter of the lower plate body 1. The upper surface of the upper plate body 2 is a heat absorbing surface. The diameter of the substrate is 190 mm.

[0079] A plurality of holes are provided on the heat absorption surface, and the holes extend from the upper surface of the upper plate body 2 to the interior of the lower plate body 1. A circular hole penetrating the substrate is provided on the heat absorption surface of the substrate, and the circular hole is coaxially arranged with the substrate, and the heating plate passes through the circular hole;

[0080] The difference from the first embodiment is that the hole body is a ring hole, and there are 7 holes in total, each hole body is coaxially arranged with the substrate, and the distance between two adjacent ring holes is the same;

[0081] Specifically, Figure 6 As shown, the ring hole is divided into two parts, namely, an upper ring hole 202 and a lower ring hole 203. The upper ring hole 202 is arranged above the lower ring hole 203 and is connected to the lower ring hole 203. The inner diameter of the lower ring hole 203 is smaller than the inner diameter of the upper ring hole 202, and the outer diameter of the lower ring hole 203 is larger than the outer diameter of the upper ring hole 202. The deep hole texture structure can reduce heat reflection, increase heat conduction area and heat absorption.

[0082] In this embodiment, the substrate is an aluminum plate, and a coating is added to the upper surface of the aluminum plate to increase the blackness, increase the heat absorption rate, and improve the thermal insulation effect.

[0083] Optionally, the substrate may be any one of a copper plate, a steel plate or a silver plate, and a coating is also added to the upper surface of the substrate to improve the blackness.

[0084] Optionally, the annular hole may also be a dovetail slot hole.

[0085] This embodiment also provides a reaction chamber structure equipped with such a substrate, including a body 3, a heating plate 5, a spray plate 6, a chamber cover plate 301 and an exhaust ring 4, wherein the diameter of the heating plate 5 is 300 mm.

[0086] A chamber is formed in the body 3, and a spray plate 6, a heating plate 5 and a substrate are sequentially installed in the chamber. The spray plate 6, the heating plate 5 and the substrate are coaxially arranged, and the substrate is arranged on the inner bottom wall of the chamber;

[0087] A cavity is formed between the substrate and the heating plate 5, the diameter of the substrate is smaller than the diameter of the chamber, an annular cavity is formed between the substrate and the inner wall of the chamber, and the exhaust ring 4 is in the shape of a circular ring plate;

[0088] Since the diameter of the upper plate body 2 is smaller than that of the lower plate body 1, a ring surface is formed on the upper surface of the lower plate body 1, and the lower surface of the air pumping ring 4 is placed on the ring surface. The outer side surface of the air pumping ring 4 contacts the inner side surface of the chamber, so that the air pumping ring 4 covers the ring cavity.

[0089] The heat absorbing surface of the substrate faces the shower plate 6 , and the upper surface of the exhaust ring 4 is at the same level as the heat absorbing surface of the substrate.

[0090] Under the condition that the reaction chamber structure remains unchanged, the thermal radiation loss of two substrates is calculated. Figure 2 The conventional substrate shown, the heat radiation loss is recorded as Q1, and the other is the substrate in the second embodiment, the heat radiation loss is recorded as Q2;

[0091] For Q1:

[0092] Heating plate diameter K = 300 mm, A1 = πK 2 / 4;

[0093] Bottom plate diameter D = 190 mm, A2 = πD2 / 4;

[0094] For Q2;

[0095] Heating plate diameter K = 300 mm, A1 = πK 2 / 4;

[0096] The substrate structure is different from the original substrate, and its upper surface has changed: A2 = 260025.39mm 2 ;

[0097] In both cases, the heating plate temperature is T1 and the base plate temperature is T2 and remains unchanged;

[0098] It can be seen from the formula that for Q2 / Q1, it is just the ratio of the areas.

[0099] It is often calculated that Q2 / Q1=0.74, which means that heat loss is reduced by 26%.

[0100] Therefore, installing the substrate in this embodiment can increase the thermal conductivity area and heat absorption, and the heat emitted by the heater is more directed to the substrate, reducing heat loss, increasing the surface temperature of the wafer, and reducing heat loss to the outside of the chamber during chamber insulation, thereby improving the uniformity of coating.

[0101] In the description of the present invention, it should be noted that the terms "upper", "lower", etc., indicating the orientation or positional relationship are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance.

[0102] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be an indirect connection through an intermediate medium, or it can be a connection between the inside of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances. In addition, in the description of the present invention, unless otherwise specified, "plurality" means two or more.

[0103] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A substrate, characterized in that: The substrate is cylindrical, one surface of the substrate is a heat absorbing surface, a circular hole penetrating the substrate is opened on the heat absorbing surface of the substrate, and the circular hole is coaxially arranged with the substrate; A plurality of holes are provided on the heat absorbing surface; The hole bodies are annular holes, and a plurality of the hole bodies are coaxially arranged with the substrate, and the distance between two adjacent annular holes is the same; The annular hole is divided into two parts, namely an upper annular hole (202) and a lower annular hole (203), wherein the upper annular hole (202) is arranged above the lower annular hole (203) and is connected to the lower annular hole (203); The inner diameter of the lower annular hole (203) is smaller than the inner diameter of the upper annular hole (202), and the outer diameter of the lower annular hole (203) is larger than the outer diameter of the upper annular hole (202).

2. A substrate according to claim 1, characterized in that: The base plate comprises a lower plate body (1) and an upper plate body (2), the upper plate body (2) being coaxially arranged with the lower plate body (1), the diameter of the upper plate body (2) being smaller than the diameter of the lower plate body (1), and the upper surface of the upper plate body (2) being a heat absorbing surface; The hole body extends from the upper surface of the upper disk body (2) to the interior of the lower disk body (1).

3. A substrate according to claim 2, characterized in that: A support body (101) is integrally formed on the lower surface of the lower plate (1), and the support body (101) is coaxially arranged with the lower plate (1); The support body (101) has the same outer diameter as the lower disk body (1), and the inner diameter of the support body (101) is greater than the outer diameter of the upper disk body (2).

4. A reaction chamber structure, characterized in that: It comprises a substrate as described in any one of claims 1 to 3, a body (3), a heating plate (5), a spray plate (6), a cavity cover plate (301) and an exhaust ring (4); A chamber is formed in the body (3), and the spray plate (6), the heating disk (5) and the substrate are sequentially installed in the chamber. The spray plate (6), the heating disk (5) and the substrate are coaxially arranged, and the substrate is arranged on the inner bottom wall of the chamber; A cavity is formed between the substrate and the heating plate (5), and the total surface area of ​​the plurality of holes accounts for 0.6% of the surface area of ​​the cavity.

5. A reaction chamber structure according to claim 4, characterized in that: The diameter of the substrate is smaller than the diameter of the chamber, and an annular cavity is formed between the substrate and the inner wall of the chamber; The air pumping ring (4) is in the shape of a circular ring plate, the lower surface of the air pumping ring (4) rests on the base plate, and the air pumping ring (4) covers the annular cavity.

6. A reaction chamber structure according to claim 5, characterized in that: The heat absorption surface of the substrate faces the shower plate (6), and the upper surface of the exhaust ring (4) is on the same horizontal plane as the heat absorption surface of the substrate.

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