Electrochemically metallized single-channel photonic crystal nonvolatile optical switch

Abstract

The application provides a single-channel photonic crystal nonvolatile optical switch of electrochemical metallization, and aims at solving the technical problems of large power consumption and volatility of the existing photonic crystal optical switch.The application comprises a photonic crystal composed of a plurality of silicon dielectric columns, a photonic crystal waveguide with a TE forbidden band is arranged between the silicon dielectric columns, an input port of the input photonic crystal waveguide is an input end, an output port of the output photonic crystal waveguide is an output end, the input end and the output end are perpendicular to each other, a resonant cavity is arranged between the input photonic crystal waveguide and the output photonic crystal waveguide, a defect dielectric column is arranged in the resonant cavity, and the defect dielectric column is connected with a bias circuit for providing a bias voltage.The application has the advantages of small structure size, fast switch time response, high optical transmission efficiency, and suitability for large-scale optical path integration; and the application is convenient to integrate, and can realize the electrically-controlled optical switch of the TE carrier optical signal in a short distance and with high efficiency.

Description

Electrochemically metallized single-channel photonic crystal non-volatile optical switch Technical Field

[0001] This invention relates to the technical field of electro-controlled photonic crystal optical switches, and more particularly to an electrochemically metallized single-channel photonic crystal non-volatile optical switch. Background Technology

[0002] In recent years, the data capacity of Internet communication has grown rapidly at a rate of nearly 50% annually, and the demand for bandwidth has also increased significantly. Internet information transmission and processing face ever-increasing capacity requirements, making the "bottleneck" of electrical switching increasingly prominent. Specifically, communication bandwidth, interconnection density, and the power consumption of network node electrical switching equipment are all approaching their permissible limits. Simultaneously, the quantum effects of electrons are becoming more pronounced with nanotechnology, posing a significant challenge to further improving device integration. For example, data from China Mobile's inter-provincial backbone transmission network shows that the rapid growth in business volume has led to a rapid increase in the power consumption of various transmission equipment racks. The maximum power consumption of a fully configured single rack (6000×6000) has exceeded 20,000W, resulting in extremely serious heat dissipation problems while consuming a large amount of electrical energy. Since 80% of the power consumption of electrical switching equipment comes from photoelectric / electro-optical conversion and electrical switching, low-power optical switching technology has become an effective solution. Compared to electrical signal transmission, optical communication has advantages such as large transmission bandwidth, strong resistance to electromagnetic interference, high interconnection density, low power consumption, and low cost, attracting increasing attention from researchers.

[0003] Optical switches are crucial components in the development of modern optical networks towards higher speeds and greater capacities. Whether for long-distance optical signal switching or on-chip optical interconnects, optical switches are key optical devices. Miniature devices based on photonic crystals, such as photonic crystal optical switches, are constructed by introducing point defects into photonic crystal waveguides. Due to electrochemical metallization, applying a voltage across the dielectric pillar of the point defect allows it to form nanoscale metal filaments, thereby altering the position of the point defect and ultimately changing the transmittance of the photonic crystal waveguide. This constitutes an electrochemically metallized photonic crystal optical switch. Furthermore, because the conductive metal filaments formed by electrochemical metallization possess excellent stability, they remain intact even after the external voltage is removed. Therefore, optical switches based on this principle are non-volatile.

[0004] Patent application number 202210799616.4 discloses a three-channel all-optical switch for a network-on-a-chip (NAT) using photonic crystals, constructed from a two-dimensional photonic crystal with a square lattice circular dielectric pillar structure. This two-dimensional photonic crystal has three photonic crystal waveguides, three photonic crystal resonant cavities, three input waveguides, and three output waveguides. This invention only reduces the number and size of the dielectric pillars on the basis of the two-dimensional photonic crystal with a square lattice circular dielectric pillar structure, without adding any new dielectric pillars. Furthermore, most of the dielectric pillars have the same structural parameters, making actual fabrication convenient. It uses chalcogenide glass (Ge). 20 Sn 10 Se 70 Made of semiconductor material Si, utilizing Ge with a high third-order nonlinear refractive index coefficient 20 Sn 10 Se 70 A photonic crystal optical switch using chalcogenide glass has been realized in the communication wavelength band. This invention features a simple structure, small size, high extinction ratio, and high quality factor. However, the nonlinear effect employed in this invention results in particularly high power consumption and volatile switching characteristics. Summary of the Invention

[0005] To address the technical problems of high power consumption and volatility in existing photonic crystal optical switches, this invention proposes an electrochemically metallized single-channel square lattice photonic crystal non-volatile optical switch, which features a small structure, high efficiency, short range, and easy integration.

[0006] To achieve the above objectives, the technical solution of the present invention is as follows: an electrochemically metallized single-channel photonic crystal non-volatile optical switch includes a photonic crystal structure composed of several silicon dielectric pillars, with TE bandgap photonic crystal waveguides provided between the silicon dielectric pillars. The port of the input photonic crystal waveguide is the input terminal, and the port of the output photonic crystal waveguide is the output terminal. The input terminal and the output terminal are perpendicular to each other. A resonant cavity is provided between the input photonic crystal waveguide and the output photonic crystal waveguide. A defective dielectric pillar is provided in the resonant cavity, and the defective dielectric pillar is connected to a bias circuit that provides a bias voltage.

[0007] Preferably, electrodes are provided at both ends of the defective dielectric column, and the bias circuit includes a square wave signal generator, which is connected to the electrodes at both ends of the defective dielectric column via wires.

[0008] Preferably, the silicon dielectric pillars are uniformly distributed on the photonic crystal; the photonic crystal is a two-dimensional square lattice photonic crystal.

[0009] Preferably, the silicon dielectric pillar is circular in shape; the defect dielectric pillar is made of a material that is easy to form conductive filaments, and the electrodes at both ends of the defect dielectric pillar are plated with a material that is easy to undergo electrochemical oxidation-reduction reactions.

[0010] Preferably, the material of the defect dielectric pillar is one of silicon dioxide, titanium dioxide, or hafnium dioxide; the electrodes at both ends of the defect dielectric pillar are plated with silver or copper; the dielectric pillar and the background of the photonic crystal are respectively composed of a high refractive index material and a low refractive index material; the high refractive index material is silicon or a medium with a refractive index greater than 3; the low refractive index material is air or a medium with a refractive index less than 1.4.

[0011] Preferably, the defective dielectric pillar is located at the center of the resonant cavity; the plane of the photonic crystal waveguide is perpendicular to the axis of the silicon dielectric pillar in the photonic crystal; the optical axis of the defective dielectric pillar is aligned with the direction of the silicon dielectric pillar.

[0012] Preferably, TE light is input from the input terminal, and the square wave signal generator of the bias circuit outputs square wave signals with different polarities. The square wave signals are coupled into the output terminal through the resonant cavity to obtain a photonic crystal carrier waveguide with a TE bandgap. The photonic crystal carrier waveguide is the structure after removing part of the silicon dielectric pillar in the photonic crystal. When the square wave signal generated by the square wave signal generator acts on the two ends of the electrode, conductive filaments will be formed in the defective dielectric pillar. The formation of conductive filaments changes the resonant frequency of the resonant cavity, thereby changing the output power of the output terminal.

[0013] Preferably, the radius of the silicon dielectric pillar is R=0.3a, the radius of the defect dielectric pillar is r=0.2a, and the waveguide widths of the input and output photonic crystal waveguides are d1=1.4a, where a is the lattice constant of the photonic crystal. The TE bandgap in the photonic crystal is calculated to be 0.41 to 0.513 (ωa / 2πc) using the plane wave expansion method, where ω is the angular frequency and c is the speed of light in free space. Light waves of any frequency between 0.41 and 0.513 (ωa / 2πc) will be confined in the photonic crystal waveguide.

[0014] Preferably, the method for implementing the switch is as follows: Initially, no conductive filaments are formed inside the defective dielectric pillar. At this time, an optical signal with the same resonant frequency as the resonant cavity can couple into the resonant cavity and output a waveguide from the output end. The optical power of the output waveguide is high, and the optical switch is in the open state. When the square wave signal generator of the bias circuit generates a positive square wave signal and acts on both ends of the defective dielectric pillar, the silver or copper on the electrodes undergoes an electrochemical oxidation-reduction reaction under the action of the electric field, and a conductive filament connecting the two electrodes is formed inside the defective dielectric pillar. At this time, the resonant frequency of the resonant cavity changes, and the original wavelength cannot couple into the resonant cavity. The output optical power of the output waveguide at the output end is low, and the optical switch is in the closed state. After the conductive filament is formed, it is stable, and the optical switch will still be in the closed state even without an external electric field. When the square wave signal generator generates a negative square wave signal and acts on both ends of the defective dielectric pillar, the conductive filaments that have been formed inside the defective dielectric pillar break from the dielectric and gradually disappear. The resonant frequency of the resonant cavity will return to the original frequency, and the closed optical wave will be output from the output end through the resonant cavity, and the optical switch will be in the open state again.

[0015] Preferably, the normalized TE bandgap frequency f of the photonic lattice norm The range is 0.41 to 0.513, and the operating wavelength λ of the TE bandgap ranges from 1.949a to 2.44a. Without considering dispersion or with very small material dispersion changes, the resonant wavelength of the resonant cavity can be obtained by changing the lattice constant a, the material and thickness of the defect dielectric pillar, and so on, to obtain a wavelength value that satisfies the wavelength range in proportion to it. The operating wavelength λ is adjusted by changing the lattice constant a and the material and size of the defect dielectric pillar.

[0016] Compared with existing technologies, the advantages of this invention are: small structural size, fast switching time response, high optical transmission efficiency, and suitability for large-scale optical path integration; easy integration, enabling short-range and efficient non-volatile optical path switching of TE optical signals, thus possessing great practical value. In specific simulation examples, by applying the proportional scaling characteristics of photonic crystals and changing the lattice constant proportionally, optical path switching functions for different wavelengths can be achieved within a certain wavelength range, and the switch can maintain its state after power-off. It features a high extinction ratio and a wide operating wavelength range, allowing pulses with a certain spectral width, Gaussian light, light of different wavelengths, or light of multiple wavelengths to operate simultaneously, which is of practical significance. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 is a planar schematic diagram of the present invention (with the external control circuit removed).

[0019] Figure 2 is a three-dimensional structural diagram of the present invention.

[0020] Figure 3 is a diagram showing the distribution of structural parameters of the present invention.

[0021] Figure 4 is a switching waveform diagram of the present invention.

[0022] Figure 5 shows the transmission characteristics in the switching state of Embodiment 1 of the present invention.

[0023] Figure 6 shows the transmission characteristics in the switching state of Embodiment 2 of the present invention.

[0024] Figure 7 shows the transmission characteristics in the switching state of Embodiment 3 of the present invention.

[0025] Figure 8 is a schematic diagram of the light field distribution of the present invention, wherein (a) is the on state and (b) is the off state.

[0026] In the diagram, 1 is the input terminal, 2 is the output terminal, 3 is the silicon dielectric pillar, 4 is the resonant cavity, 5 is the defective dielectric pillar, 6 is the wire, and 7 is the square wave signal generator. Detailed Implementation

[0027] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0028] As shown in Figure 1, this invention proposes an electrochemically metallized single-channel photonic crystal non-volatile optical switch, comprising a photonic crystal structure composed of numerous silicon dielectric pillars 3 as a background. An input terminal 1, an output terminal 2, and a resonant cavity 4 are located between the silicon dielectric pillars 3. A defect dielectric pillar 5 with silver-plated electrodes at both ends is located within the resonant cavity 4. The input terminal 1 and the output terminal 2 are perpendicular to each other, and the resonant cavity 4 is located between the input terminal 1 and the output terminal 2. The initial signal light of this device is incident from the left input terminal 1, and the output terminal 2 outputs a light wave. Bias circuits providing bias voltages are provided at both ends of the defect dielectric pillar 5. The bias circuits include a square wave signal generator 7, which is connected to the silver-plated electrodes at both ends of the defect dielectric pillar 5 via wires 6. The photonic crystal is a two-dimensional cubic lattice photonic crystal.

[0029] The silicon dielectric pillar 3 is circular in shape.

[0030] The defect dielectric pillar 5 is made of materials such as silicon dioxide, titanium dioxide, and hafnium dioxide, which are easy to form conductive filaments. Its main function is to form a resonant cavity and to form conductive filaments within it. The electrodes plated at both ends of the defect dielectric pillar 5 are made of materials such as silver and copper, which are easy to undergo electrochemical oxidation-reduction reactions.

[0031] The photonic crystal's dielectric pillars and background are composed of a high-refractive-index material and a low-refractive-index material, respectively; the high-refractive-index material is silicon or a medium with a refractive index greater than 3; the low-refractive-index material is air or a medium with a refractive index less than 1.4. This choice is advantageous for forming a wide TE bandgap.

[0032] Input terminal 1 is located at the left end of the photonic lattice, and output terminal 2 is located above the photonic lattice.

[0033] The photonic crystal carrier waveguide is the structure after removing part of the silicon dielectric pillar 3 in the photonic crystal. The port of the input photonic crystal waveguide is the input terminal, and the port of the output photonic crystal waveguide is the output terminal. The resonant cavity is located between the input photonic crystal waveguide and the output photonic crystal waveguide. The defective dielectric pillar 5 is located at the center of the resonant cavity 4. The two ends of the defective dielectric pillar are plated with silver electrodes and connected to the square wave signal generator through wires. TE light is input through the input terminal 1, and the square wave signal generator 7 outputs square wave control signals of different polarities. The TE signal light is coupled into the output terminal 2 through the resonant cavity. As shown in Figure 2, the bias circuit includes a square wave signal generator 7 and a wire 6. One end of the square wave signal generator 7 is connected to one end of the silver electrode of the defective dielectric pillar 5 through the wire 6; the other end of the square wave signal generator 7 is connected to the other end of the silver electrode of the defective dielectric pillar 5 through the wire 6.

[0034] As shown in Figure 3, this invention uses a Cartesian coordinate system, with the positive X-axis pointing horizontally to the right, the positive Y-axis pointing vertically upwards within the plane of the paper, and the positive Z-axis pointing outwards perpendicular to the paper. As shown in Figure 3, the relevant parameters of the device in this invention are: a is the photonic crystal lattice constant, the radius of the silicon dielectric pillar R = 0.3a, the radius of the defect dielectric pillar r = 0.2a, and the waveguide widths d1 of input terminal 1 and output terminal 2 = 1.4a.

[0035] The photonic crystal of this invention has a square lattice with a lattice constant of α and a silicon dielectric pillar radius of 0.3α. The TE bandgap parameters in the photonic crystal can be calculated using the plane wave expansion method. One of the TE bandgap parameters is between 0.41 and 0.513 (ωα / 2πc). Light waves of any frequency within this range will be confined within the photonic crystal carrier waveguide.

[0036] The photonic crystal waveguide used in this invention requires the removal of a portion of the dielectric pillar to form a waveguide. The waveguide plane is perpendicular to the axis of the dielectric pillar in the photonic crystal. The resonant cavity is formed by removing the background silicon dielectric pillar at the center between the input and output photonic crystal waveguides and adding a defective dielectric pillar. The optical axis of the defective dielectric pillar is aligned with the direction of the background silicon dielectric pillar.

[0037] The principle of this invention mainly explains the formation and collapse of conductive filaments and their impact on optical transmission characteristics. The formation and collapse of conductive filaments is a phenomenon observed in resistive switching memory (RSM). Under the influence of an external electric field, the active electrodes of the RSM undergo an electrochemical oxidation-reduction reaction within the RSM's dielectric, ultimately forming metallic conductive filaments connecting the electrodes within the dielectric. Theory and experiments have confirmed that the formation and collapse of conductive filaments can occur as quickly as the picosecond (ps) level, and that the formed filaments are very stable and non-volatile. In this invention, the two ends of the defective dielectric are plated with metallic silver. When a square wave pulse generated by a square wave signal generator is applied to the two ends of the silver electrodes, silver conductive filaments form within the defective dielectric column. The formation of these silver conductive filaments alters the resonant frequency of the resonant cavity, thereby changing the output power of the output port.

[0038] The optical switch of this invention is generally implemented through the following method: Initially, no conductive filaments are formed within the defective dielectric pillar. At this time, an optical signal with the same resonant frequency as the resonant cavity can couple into the resonant cavity and be output from the output waveguide. The optical power of the output waveguide is relatively high, and the switch is in the open state. When a square wave signal generator generates a positive square wave signal and applies it to both ends of the defective dielectric pillar, silver undergoes an electrochemical oxidation-reduction reaction under the influence of an electric field, forming a conductive filament connecting the electrodes at both ends within the dielectric pillar. At this time, the resonant frequency of the resonant cavity changes, and the original wavelength can no longer couple into the resonant cavity. Therefore, the output optical power of the output waveguide is very low, and the switch is in the off state. Since the conductive filaments are relatively stable after formation, the switch will remain in the off state even without an external electric field, thus giving the switch non-volatile characteristics. When a square wave signal generator generates a negative square wave signal and applies it to both ends of the defective dielectric pillar, due to the same factors, the conductive filaments already formed within the defective dielectric will break off from the dielectric and gradually disappear, thus the resonant frequency of the resonant cavity will return to its original frequency. The previously blocked light waves can now be output normally from the output port through the resonant cavity, thus putting the switch back on. Furthermore, because the materials used in this structure are silicon, silicon dioxide, and other materials compatible with existing semiconductor processes, this device is highly compatible and easily integrated with existing optoelectronic technologies. Simultaneously, the photonic crystal structure can be modified by adding or removing dielectric pillars, and the structure of the photonic crystal waveguide can be compressed or enlarged, thus giving this device the characteristics of short-range high efficiency.

[0039] The lattice constant and operating wavelength λ can be determined in the following ways:

[0040] ;

[0041] Among them, λ, , These represent the incident light wavelength, the normalized wavelength of the device, and the normalized frequency of the device, respectively.

[0042] In this invention, a normalized bandgap frequency range f of a photonic crystal with a square lattice silicon structure is described. norm The value is between 0.41 and 0.513. The corresponding bandgap wavelength λ is calculated to be between 1.949 Å and 2.44 Å. Furthermore, the output wavelength is related to the resonant wavelength of the resonant cavity, which can be changed by adjusting the material and size of the defect dielectric pillar. Therefore, it can be seen that, without considering dispersion or with very small changes in material dispersion, a wavelength value that satisfies the wavelength range proportionally can be obtained by changing the lattice constant α, the material, and the thickness of the defect dielectric pillar. The operating wavelength can be adjusted by changing the lattice constant and the material and size of the defect dielectric pillar.

[0043] As shown in Figure 4, the output waveform of optical power is obtained by controlling the square wave signal generator to output square wave signals with different polarities. Here, τ1 and τ2 are the switching transition times, which are also the pulse widths of the square wave signals. Since the formation and rupture of the conductive filaments are very rapid, on the order of picoseconds, while the pulse width of the square wave signal is on the order of nanoseconds, the pulse width time can be considered to be the switching transition time, indicating a fast switching response.

[0044] The parameters of an optical switch: The switching contrast ratio (extinction ratio) is defined as 10log(output power at the output terminal when on / output power at the output terminal when off) = 10log(P 开 / P 关 Figure 5 shows the output power of the switch in the on and off states. As can be seen from Figure 5, at the normalized optical frequency ωa / 2πc = 0.4405, the optical switch has the maximum output power in the on state and a relatively low output power in the off state. According to the extinction ratio formula, the extinction ratio of the switch can reach 21 dB at this normalized wavelength.

[0045] Example 1

[0046] A non-volatile optical switch using an electrochemically metallized single-channel cubic lattice photonic crystal can achieve optical switching functions at different wavelengths by proportionally changing the lattice constant, without considering dispersion or with very small material dispersion variations. Other parameters are set as follows: a = 0.4 μm, R = 0.3 a, r = 0.2 a, d1 = 1.4 a, and the normalized optical frequency ωa / 2πc = 0.4405, with other parameters remaining constant, corresponding to a 908 nm light wave. The output power in the on and off states for the light wave in the vicinity of the normalized frequency 0.4405 is obtained through simulation calculations, as shown in Figure 5. Based on the data in Figure 5, the on / off extinction ratio for the 908 nm light wave can reach 21 dB.

[0047] Implementation Case 2

[0048] A non-volatile optical switch using an electrochemically metallized single-channel cubic lattice photonic crystal can achieve optical switching functions at different wavelengths by proportionally changing the lattice constant, without considering dispersion or with very small material dispersion variations. Other parameters are set as follows: a = 0.45 μm, R = 0.3a, r = 0.2a, d1 = 1.4a, normalized optical frequency ωa / 2πc = 0.4405, with other parameters remaining constant, corresponding to a 1021 nm light wave. The output power in the on and off states for the light wave in the vicinity of the normalized frequency 0.4405 is obtained through simulation calculations, as shown in Figure 6. Based on the data in Figure 6, the on / off extinction ratio corresponding to the 1021 nm light wave can reach 21 dB.

[0049] Implementation Case 3

[0050] A non-volatile optical switch using an electrochemically metallized single-channel cubic lattice photonic crystal can achieve optical switching functions at different wavelengths by proportionally changing the lattice constant, without considering dispersion or very small material dispersion variations. Other parameters are set as follows: a = 0.5 μm, R = 0.3 a, r = 0.2 a, d1 = 1.4 a, normalized optical frequency ωa / 2πc = 0.4405, with other parameters remaining constant, corresponding to a light wave of 1135 nm. The output power in the on and off states for the light wave in the range of the normalized frequency 0.4405 is obtained through simulation calculations, as shown in Figure 7. Based on the data in Figure 7, the extinction ratio for the 1135 nm light wave can reach 21 dB. The electric field distribution diagrams of the optical switch in the on and off states can be obtained using finite element analysis software, as shown in Figure 8. It can be seen that when the switch is on, most of the light energy can effectively pass through the output port, while when the switch is off, almost no light energy is output from the output port.

[0051] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A single-channel photonic crystal non-volatile optical switch with electrochemical metallization, characterized in that, The structure includes a photonic crystal structure composed of several silicon dielectric pillars (3), with TE bandgap photonic crystal waveguides between the silicon dielectric pillars (3). The port of the input photonic crystal waveguide is the input end (1), and the port of the output photonic crystal waveguide is the output end (2). The input end (1) and the output end (2) are perpendicular to each other. A resonant cavity (4) is provided between the input photonic crystal waveguide and the output photonic crystal waveguide. A defect dielectric pillar (5) is provided in the resonant cavity (4). The defect dielectric pillar (5) is connected to a bias circuit that provides a bias voltage. The silicon dielectric pillars (3) are uniformly distributed on the photonic crystal. The photonic crystal is a two-dimensional square lattice photonic crystal. The shape of the silicon dielectric pillars (3) is circular. The material of the defect dielectric pillar (5) is a material that is easy to form conductive filaments. The material plated on the electrodes at both ends of the defect dielectric pillar (5) is a material that is easy to undergo electrochemical oxidation-reduction reaction.

2. The electrochemically metallized single-channel photonic crystal non-volatile optical switch according to claim 1, characterized in that, The defective dielectric column (5) has electrodes at both ends, and the bias circuit includes a square wave signal generator (7). The square wave signal generator (7) is connected to the electrodes at both ends of the defective dielectric column (5) through wires (6).

3. The electrochemically metallized single-channel photonic crystal non-volatile optical switch according to claim 1, characterized in that, The defect dielectric pillar (5) is made of silicon dioxide, titanium dioxide or hafnium dioxide; the electrodes at both ends of the defect dielectric pillar (5) are plated with silver or copper; the silicon dielectric pillar and the background of the photonic crystal are composed of a high refractive index material and a low refractive index material, respectively; the high refractive index material is a medium with a refractive index of 3 or higher; the low refractive index material is a medium with a refractive index of less than 1.

4.

4. The electrochemically metallized single-channel photonic crystal non-volatile optical switch according to claim 3, characterized in that, The high refractive index material is silicon; the low refractive index material is air.

5. The electrochemically metallized single-channel photonic crystal non-volatile optical switch according to any one of claims 1-4, characterized in that, The defective dielectric pillar (5) is located at the center of the resonant cavity (4); the plane of the photonic crystal waveguide is perpendicular to the axis of the silicon dielectric pillar (3) in the photonic crystal; the optical axis of the defective dielectric pillar (5) is consistent with the direction of the silicon dielectric pillar (3).

6. The electrochemically metallized single-channel photonic crystal non-volatile optical switch according to claim 5, characterized in that, TE light is input from the input terminal (1), and the square wave signal generator (7) of the bias circuit outputs square wave signals with different polarities. The square wave signals are coupled into the output terminal (2) through the resonant cavity (4) to obtain a photonic crystal carrier waveguide with a TE bandgap. The photonic crystal carrier waveguide is the structure after removing part of the silicon dielectric pillar (3) in the photonic crystal. When the square wave signal generated by the square wave signal generator (7) acts on the two ends of the electrode, conductive filaments will be formed in the defective dielectric pillar (5). The formation of conductive filaments changes the resonant frequency of the resonant cavity (4), thereby changing the output power of the output terminal.

7. The electrochemically metallized single-channel photonic crystal non-volatile optical switch according to claim 1, characterized in that, The radius of the silicon dielectric pillar (3) is R=0.3a, the radius of the defect dielectric pillar (5) is r=0.2a, and the waveguide widths of the input and output photonic crystal waveguides are d1=1.4a, where a is the lattice constant of the photonic crystal. The normalized TE bandgap frequency ωa / 2πc of the photonic crystal is calculated to be in the range of 0.41 to 0.513 using the plane wave expansion method, where ω is the angular frequency and c is the speed of light in free space. Light waves of any frequency in the range of 0.41 to 0.513 of the normalized TE bandgap frequency ωa / 2πc will be confined in the photonic crystal waveguide.

8. The electrochemically metallized single-channel photonic crystal non-volatile optical switch according to any one of claims 1, 6, and 7, characterized in that, The method to achieve the switch is as follows: Initially, no conductive filament is formed in the defective dielectric pillar (5). At this time, the optical signal with the same resonant frequency as the resonant cavity (4) can couple into the resonant cavity (4) and output a waveguide from the output end (2). The optical power of the output waveguide is large, and the optical switch is in the open state at this time. When the square wave signal generator (7) of the bias circuit generates a positive square wave signal and acts on both ends of the defective dielectric pillar (5), the silver or copper on the electrode undergoes an electrochemical oxidation-reduction reaction under the action of the electric field, and forms a conductive filament connecting the two electrodes in the defective dielectric pillar (5). At this time, the resonant cavity (4) When the resonant frequency changes, the original wavelength cannot be coupled into the resonant cavity, and the output wave power of the output waveguide at the output end (2) is low. At this time, the optical switch is in the off state. After the conductive filament is formed and stabilized, the optical switch will still be in the off state even without an external electric field. When the square wave signal generator (7) generates a negative square wave signal and acts on both ends of the defective dielectric pillar (5), the conductive filament that has been formed in the defective dielectric pillar (5) breaks from the dielectric and gradually disappears. The resonant frequency of the resonant cavity (4) will return to the original frequency. The closed light wave is output from the output end through the resonant cavity (4), and the optical switch is in the open state again.

9. The electrochemically metallized single-channel photonic crystal non-volatile optical switch according to claim 8, characterized in that, The normalized TE bandgap frequency ωa / 2πc of the photonic crystal ranges from 0.41 to 0.513, and the operating wavelength λ of the TE bandgap ranges from 1.949a to 2.44a. Without considering dispersion, the resonant wavelength of the resonant cavity can be obtained by changing the lattice constant a, the material and thickness of the defect dielectric pillar, and so on, to obtain a wavelength value that satisfies the wavelength range in proportion to it. The operating wavelength λ can be adjusted by changing the lattice constant a and the material and size of the defect dielectric pillar.

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