LED wafer coating method

Abstract

The present application relates to the technical field of LED chip, specifically relates to a kind of LED wafer coating method, comprising the following steps: S2: set the revolution radius of plating pot 50-60cm;Horizontal direction, set the revolution axis distance of plating source from plating pot 18-27.5cm;S4: set the plating source start evaporation at the same time, set the revolution speed of plating pot 6-10rpm, plating pot revolves around its own axis, the rotation speed is 250-300° / S;The beneficial effects of the present application: the electrode evaporated using the LED wafer coating method provided by the present application, the slope of electrode sidewall and wafer surface is gentle, electrode protection layer is set on this electrode, and electrode protection layer can better protect electrode.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of LED chip, in particular to a LED wafer coating method. BACKGROUND

[0002] In the field of LED chip, vacuum evaporation machine is often used to evaporate electrode on wafer. Vacuum evaporation refers to a process method that evaporates film material (or film material) at a certain temperature under vacuum condition, so that the gas particles fly to the wafer surface and condense into a film.

[0003] In the prior art, the evaporation technology of LED electrode is mostly central evaporation, that is, the evaporation source is below the rotating evaporation pot, and the evaporation method is that the evaporation source is on the rotation axis of the evaporation pot. The electrode side wall angle evaporated by this method is relatively steep (the cross section of the electrode is approximately trapezoidal, and "the electrode side wall angle is relatively steep" means that the four corners of the trapezoid are closer to 90 degrees), which is not conducive to the protection of the electrode by the electrode protection layer. SUMMARY

[0004] The technical problem to be solved by the present application is to provide a LED wafer coating method to solve the problem of steep electrode side wall evaporation.

[0005] In order to solve the above technical problems, a technical scheme adopted by the present application is as follows: a LED wafer coating method, comprising the following steps:

[0006] S1: setting the wafer on the evaporation pot of the evaporation machine; setting the evaporation source below the evaporation pot;

[0007] S2: in the horizontal direction, the distance from the evaporation source to the orbit axis of the evaporation pot is 0.3-0.5 times of the orbit radius of the evaporation pot;

[0008] S3: placing the evaporation material on the evaporation source;

[0009] S4: setting the evaporation source to start evaporation at the same time, setting the evaporation pot to rotate at a speed of 6-10 rpm around its own axis, and setting the self-rotation speed of the evaporation pot to 250-300° / S;

[0010] S5: completing the electrode evaporation of the wafer.

[0011] The beneficial effects of the present application (please refer to the attached Figure 1 ): The traditional electrode evaporation process needs to smear photoresist on the wafer, develop the photoresist, and form photoetching holes with trapezoidal cross section.

[0012] The first evaporation source point corresponds to the traditional electrode evaporation process, the first evaporation source point is on the orbit axis of the evaporation pot, and the sublimation evaporation path of the evaporation material of the first evaporation source point is the first evaporation path;

[0013] The plating source of the application is arranged at the second plating source point, and the sublimation plating film moving path of the plating material of the second plating source point is the second evaporation path.

[0014] In the traditional electrode evaporation process, the surface of the wafer is usually perpendicular to the first evaporation path to ensure the evaporation of symmetrical electrodes. In the application, the distance from the plating source to the revolution axis of the plating pot is one half to one third of the revolution radius of the plating pot. By comparing the first evaporation path and the second evaporation path, it can be found that, on the upper side of the photoetching hole, due to the blockage of the photoresist, the plating material wall of the first plating source point covers less wafer surface than the plating material of the second plating source point.

[0015] The plating source of the application can evaporate asymmetrical electrodes, so the plating pot is arranged to rotate to make the electrodes symmetrical.

[0016] Therefore, the electrodes evaporated by the LED wafer plating method provided by the application have gentle slopes between the electrode side walls and the wafer surface, and the electrode protection layer can better protect the electrodes. BRIEF DESCRIPTION OF DRAWINGS

[0017] Figure 1 Fig. 1 is a schematic diagram of the principle of an LED wafer plating method according to the application;

[0018] Label explanation:

[0019] 1, photoresist; 11, photoetching hole;

[0020] 2, first plating source point; 21, first evaporation path;

[0021] 3, second plating source point; 31, second evaporation path;

[0022] 4, revolution radius of the plating pot. DETAILED DESCRIPTION

[0023] To explain the technical content, purposes and effects of the application in detail, the following will be explained in combination with the embodiments and the drawings.

[0024] An LED wafer plating method, comprising the following steps:

[0025] S1: arranging a wafer on a plating pot of an evaporation machine; and arranging a plating source below the plating pot;

[0026] S2: arranging the distance from the plating source to the revolution axis of the plating pot to be 0.3-0.5 times of the revolution radius of the plating pot in the horizontal direction;

[0027] S3: placing plating material on the plating source;

[0028] S4: set the plating source to start evaporation at the same time, set the plating pot revolution speed 6-10rpm, the plating pot revolves around its own axis, the rotation speed is 250-300° / S;

[0029] S5: complete the electrode evaporation of the wafer.

[0030] The beneficial effects of the present application (please refer to the attached Figure 1 ): The traditional electrode evaporation process needs to smear photoresist 1 on the wafer, develop the photoresist 1, and form a photoetching hole 11 with a trapezoidal cross section.

[0031] The first plating source point 2 corresponds to the traditional electrode evaporation process, the first plating source point 2 is on the plating pot revolution axis, and the sublimation plating film moving path of the plating material of the first plating source point 2 is the first evaporation path 21.

[0032] The plating source of the present application is set at the second plating source point 3, and the sublimation plating film moving path of the plating material of the second plating source point 3 is the second evaporation path 31.

[0033] In the traditional electrode evaporation process, the surface of the wafer is usually perpendicular to the first evaporation path 21 to ensure that the electrode is symmetrical; in the present application, the distance from the plating source to the plating pot revolution axis is one-half to one-third of the plating pot revolution radius 4, and by comparing the first evaporation path 21 and the second evaporation path 31, it can be found that on the upper side of the photoetching hole 11, due to the blockage of the photoresist 1, the plating material wall of the first plating source point 2 and the plating material of the second plating source point 3 cover less wafer surface.

[0034] The plating source of the present application can evaporate an asymmetric electrode, so the plating pot is set to rotate to make the electrode symmetrical.

[0035] Therefore, the electrode evaporated by the LED wafer plating film method provided by the present application has a gentle slope between the electrode side wall and the wafer surface, and the electrode protection layer can better protect the electrode.

[0036] Further, the S1 is specifically: setting the wafer on the plating pot of the evaporation machine; setting the plating source below the plating pot; in the vertical direction, the distance from the plating source to the center of the surface of the plating pot is 600-700mm.

[0037] As described above, a reasonable distance from the plating source to the plating pot is provided, so that the electrode evaporation is high-quality and efficient.

[0038] Further, the S1 is specifically: setting the wafer on the plating pot of the evaporation machine; setting the plating source below the plating pot; setting the angle between the surface of the plating pot and the horizontal plane to be 39-43 degrees.

[0039] As described above, the placement angle of the plating pot will determine the slope of the electrode side wall, and the above setting provides a simple and efficient plating pot square box angle.

[0040] Further, the S2 is specifically setting the revolution radius of the plating pot to be 50-60 cm; and setting the distance between the plating source and the revolution axis of the plating pot to be 18-27.5 cm.

[0041] From the above description, the above setting provides a simple and efficient setting position of the revolution radius of the plating pot and the plating source.

[0042] Further, the “at the same time of setting the plating source to start the evaporation deposition” of the S4 is specifically setting the evaporation deposition temperature of the plating source to be 800-1500 degrees, and setting the process temperature to be 50-70 degrees.

[0043] From the above description, the above setting provides a simple and efficient evaporation deposition temperature and process temperature.

[0044] Further, the plating material of the S3 is gold; and the S4 is specifically setting the evaporation deposition temperature of the plating source to be 1064 degrees, and setting the process temperature to be 60 degrees; and setting the revolution speed of the plating pot to be 6-10 rpm, and setting the self-rotation speed of the plating pot to be 250-300° / S.

[0045] From the above description, the above setting provides a simple and efficient evaporation deposition temperature and process temperature for the evaporation deposition of gold.

[0046] Further, the S4 is specifically setting the revolution speed of the plating pot to be 8 rpm, and setting the self-rotation speed of the plating pot to be 265° / S, at the same time of setting the plating source to start the evaporation deposition.

[0047] From the above description, the above setting provides a simple and efficient movement data of the moving parts of the evaporation deposition machine.

[0048] Embodiment One

[0049] The embodiment provides an LED wafer film plating method, including the following steps:

[0050] S1: setting the wafer on the plating pot with a radius of 300-360 mm of the evaporation deposition machine; setting the plating source below the plating pot; in the vertical direction, the distance between the plating source and the center of the surface of the plating pot is 600-700 mm; and setting the angle between the surface of the plating pot and the horizontal plane to be 39-43 degrees.

[0051] S2: setting the revolution radius of the plating pot to be 50-60 cm; and setting the distance between the plating source and the revolution axis of the plating pot to be 18-27.5 cm.

[0052] S3: placing the plating material on the plating source.

[0053] S4: setting the evaporation deposition temperature of the plating source to be 800-1500 degrees, and setting the process temperature to be 50-70 degrees, and the plating rate of the plating material is The revolution speed of the plating pot is 6-10 rpm, and the plating pot rotates around its own axis at a rotation speed of 250-300° / S.

[0054] S5: completing the electrode evaporation of the wafer.

[0055] Example Two

[0056] S1: setting the wafer on a plating pot with a radius of 300 mm of the evaporation machine; setting the plating source below the plating pot; in the vertical direction, the distance from the plating source to the center of the surface of the plating pot is 600 mm; setting the angle between the surface of the plating pot and the horizontal plane to be 39 degrees;

[0057] S2: setting the revolution radius of the plating pot to be 50 cm; setting the distance from the plating source to the revolution axis of the plating pot in the horizontal direction to be 18 cm;

[0058] S3: placing the plating material on the plating source;

[0059] S4: setting the evaporation temperature of the plating source to be 800 degrees, while setting the process temperature to be 50 degrees, and the plating rate of the plating material to be The revolution speed of the plating pot is 6 rpm, and the plating pot rotates around its own axis at a rotation speed of 250° / S.

[0060] S5: completing the electrode evaporation of the wafer.

[0061] Example Three

[0062] The embodiment provides a LED wafer coating method, which comprises the following steps:

[0063] S1: setting the wafer on a plating pot with a radius of 330 mm of the evaporation machine; setting the plating source below the plating pot; in the vertical direction, the distance from the plating source to the center of the surface of the plating pot is 650 mm; setting the angle between the surface of the plating pot and the horizontal plane to be 41 degrees;

[0064] S2: in the horizontal direction, setting the distance from the plating source to the revolution axis of the plating pot to be 0.3-0.5 times of the revolution radius of the plating pot;

[0065] S3: placing the plating material on the plating source;

[0066] S4: setting the evaporation temperature of the plating source to be 1064 degrees, while setting the process temperature to be 60 degrees, and the plating rate of the plating material to be The revolution speed of the plating pot is 8 rpm, and the plating pot rotates around its own axis at a rotation speed of 265° / S.

[0067] S5: completing the electrode evaporation of the wafer.

[0068] The above merely illustrates the embodiments of the present application, and is not intended to limit the patent scope of the present application. Any equivalent transformation or direct or indirect application in the related technical field based on the content of the present application specification and drawings is also included in the patent protection scope of the present application.

Claims

1. A method for coating LED wafer, characterized in that, It comprises the following steps: S1: setting the wafer on the plating pot of the evaporation machine; setting the plating source below the plating pot; S2: in the horizontal direction, the distance from the plating source to the public rotation axis of the plating pot is 0.3-0.5 times the public rotation radius of the plating pot; S3: placing the plating material on the plating source; S4: setting the plating source to start evaporation at the same time, setting the plating pot public rotation speed to 6-10 rpm, the plating pot rotates around its own axis, and the self-rotation speed is 250-300° / S; S5: complete the electrode evaporation of the wafer; S1 is specifically: setting the wafer on the plating pot of the evaporation machine; setting the plating source below the plating pot; in the vertical direction, the distance from the plating source to the center of the surface of the plating pot is 600-700mm; setting the angle between the surface of the plating pot and the horizontal plane to be 39-43 degrees.

2. The LED wafer coating method according to claim 1, wherein, S1 is specifically: setting the wafer on the plating pot with a radius of 300-360mm of the evaporation machine; setting the plating source below the plating pot.

3. The LED wafer coating method of claim 1, wherein, S2 is specifically: setting the public rotation radius of the plating pot to 50-60cm; setting the distance from the plating source to the public rotation axis of the plating pot in the horizontal direction to be 18-27.5cm.

4. The LED wafer coating method of claim 1, wherein, The "setting the plating source to start evaporation at the same time" of S4 is specifically: setting the evaporation temperature of the plating source to 800-1500 degrees at the same time, setting the process temperature to 50-70 degrees.

5. The LED wafer coating method of claim 1, wherein, The plating material of S3 is gold; S4 is specifically: setting the evaporation temperature of the plating source to 1064 degrees at the same time, setting the process temperature to 60 degrees; setting the plating pot public rotation speed to 6-10 rpm, the plating pot rotates around its own axis, and the self-rotation speed is 250-300° / S.

6. The LED wafer coating method of claim 1, wherein, S4 is specifically: setting the plating source to start evaporation at the same time, setting the plating pot public rotation speed to 8 rpm, the plating pot rotates around its own axis, and the self-rotation speed is 265° / S.

Images