A linkage lifting mechanism applied to a vertical epitaxial device

Abstract

The present invention discloses a linkage lifting mechanism applied to a vertical epitaxial device, which relates to the technical field of wafer preparation; it includes a base located at the central position of the reaction chamber, and the top of the base is used to load the substrate; an upper thermal insulation layer is annularly arranged on the inner wall of the reaction chamber, and a lower thermal insulation layer capable of lifting is arranged below the upper thermal insulation layer; a linkage lifting mechanism is arranged at the bottom outside the reaction chamber, and the linkage lifting mechanism includes a lifting frame. A lifting motor base is fixedly connected to the middle position of the lifting frame. The lifting frame and the lifting motor base can move through the driving mechanism and thus lift synchronously. Symmetrically arranged lifting seats are fixedly connected to both ends of the lifting frame. A push rod is connected to the top of the lifting seat. The tops of the two push rods pass through the corresponding channel flanges at both ends of the reaction chamber bottom plate and are nested with the support blocks based on the installation limiting structure. A support ring and the lower thermal insulation layer are sequentially placed on the support blocks. The linkage lifting mechanism applied to the vertical epitaxial device provided by the present invention adopts one lifting mechanism to act and can realize synchronous lifting on both sides.

Description

Technical Field

[0001] The present invention relates to the technical field of wafer preparation, and particularly to a linkage lifting mechanism applied to a vertical epitaxial device. Background Art

[0002] The vertical epitaxial device uses chemical vapor deposition to prepare semiconductor wafers. It is necessary to place the wafer in the reaction chamber and heat it together with the reaction gas to a high temperature environment of 1500°C to 1700°C. A heat insulation layer needs to be installed on the outer periphery of the base to reduce heat loss in the substrate area. The reaction chamber is connected to an external handling device and works in coordination. The flange connecting the reaction chamber and the handling device is arranged near the substrate. After a single film formation is completed, the robotic arm extends into the reaction chamber to carry the substrate and load the substrate to be film-formed for continuous production. The lower heat insulation layer of the lower furnace body has a lifting function, which can simultaneously meet the requirements of reducing heat loss around the substrate during the film formation process and unobstructed substrate transfer. Since the lower heat insulation layer is relatively large in volume, at least two sides need to be lifted simultaneously during the lifting process. However, the existing lifting devices use multiple lifting mechanisms to act simultaneously, and it is easy to occur the situation of asynchronous lifting. Summary of the Invention

[0003] The purpose of the present invention is to provide a linkage lifting mechanism applied to a vertical epitaxial device to solve the problems existing in the above-mentioned prior art. By using one lifting mechanism to act, synchronous lifting on both sides can be achieved.

[0004] To achieve the above purpose, the present invention provides the following solutions:

[0005] The present invention provides a linkage lifting mechanism applied to a vertical epitaxial device, including a base located at the central position of the reaction chamber. The top of the base is used to load the substrate, and a wafer is provided on the substrate. A heat field is arranged inside the base. An upper heat insulation layer is annularly arranged on the inner wall of the reaction chamber. A flow guide cylinder is arranged on one side of the upper heat insulation layer away from the inner wall of the lower furnace body. The upper part of the flow guide cylinder is a straight cylinder structure, and the lower part is a tapered flared structure. A lower heat insulation layer capable of lifting is arranged below the upper heat insulation layer. A protective layer capable of inhibiting the deposition of reactants is arranged on one side of the lower heat insulation layer away from the inner wall of the lower furnace body. The protective layer is a sleeve with both the inner and outer walls coated. The upper part of the sleeve is a tapered necking structure, and the lower part is a straight cylinder structure. A linkage lifting mechanism is arranged at the bottom outside the reaction chamber. The linkage lifting mechanism includes a lifting frame. A lifting motor seat is fixedly connected to the middle position of the lifting frame. The lifting frame and the lifting motor seat can be lifted synchronously through the action of a driving mechanism. Symmetrically arranged lifting seats are fixedly connected to both ends of the lifting frame. A push rod is connected to the top of the lifting seat. The tops of the two push rods pass through the corresponding channel flanges at both ends of the reaction chamber bottom plate and are nested with the support block based on an installation limiting structure. A support ring and the lower heat insulation layer are sequentially placed on the support block.

[0006] Optionally, slide rails are symmetrically arranged on the outer side of the lifting seat, and the lifting seat is slidably connected to the corresponding side of the slide rail through a slider.

[0007] Optionally, a push rod fixing seat is fixedly connected to the bottom of the push rod, and the bottom of the push rod fixing seat is fixedly connected to the cooling device and the lifting seat in sequence; a combined cooling flow channel is formed by the push rod fixing seat and the cooling device.

[0008] Optionally, the cooling device includes a cooling water seat, the inside of the push rod is hollow, a water outlet is provided on one side of the push rod fixing seat, the water outlet is communicated with the inside of the push rod, an extension pipe with both ends open is installed on the top of the cooling water seat, the extension pipe passes through the push rod fixing seat and is inserted into the inside of the push rod, and a water inlet is provided on one side of the cooling water seat, and one end inside the water inlet is communicated with the bottom of the extension pipe.

[0009] Optionally, a corrugated pipe is sleeved outside the push rod, the bottom of the corrugated pipe is connected to the push rod fixing seat, and the top of the corrugated pipe is fixedly and sealingly connected to the channel flange.

[0010] Optionally, sealing ring grooves are provided on both sides of the push rod fixing seat, sealing rings are fixedly installed in the sealing ring grooves, the upper end of the push rod fixing seat is sealingly connected to the bottom of the corrugated pipe through a sealing ring, and the bottom of the push rod fixing seat is sealingly connected to the top of the cooling water seat through a sealing ring.

[0011] Optionally, a rotating shaft is connected to the bottom of the base, the rotating shaft passes through the central through hole of the reaction chamber bottom plate and is connected to a rotating motor, the rotating motor is located in a rotating chamber with an open top, and the top of the rotating chamber is fixedly and sealingly connected to the central through hole of the reaction chamber bottom plate.

[0012] Optionally, a transfer channel is provided on the side wall of the reaction chamber, a gate valve is provided outside the transfer channel, a handling system is provided outside the gate valve, and the transfer channel is located at a position between the upper heat insulation layer and the lower heat insulation layer.

[0013] Optionally, a support ring made of quartz material is provided at the bottom of the lower heat insulation layer, and the bottom of the support ring is fixedly connected to the top of the push rod through a support block.

[0014] Optionally, a quartz shaft sleeve is inserted into the top of the channel flange of the bottom plate of the reaction chamber, a quartz plate is fixedly provided on the bottom plate of the reaction chamber, the base passes through the quartz plate and is arranged in the reaction chamber, and the position of the base is higher than the installation position of the quartz plate; a quartz seat with an L-shaped cross section is provided at the connection position between the bottom of the inner wall of the reaction chamber and the bottom plate of the reaction chamber, an outer flange is provided around the top of the quartz shaft sleeve, and the bottom of the outer flange is respectively in contact connection with the quartz plate and the quartz seat.

[0015] The present invention has achieved the following technical effects compared with the prior art:

[0016] In the present invention, a driving mechanism controls the simultaneous lifting of the push rods on both sides, with good synchronism; the push rods have cooling channels inside, and the spray outlets at the top of the extension pipes of the cooling water are arranged at the inner ends of the push rods, ensuring that the heat in the end regions of the push rods can be quickly conducted outwards through the cooling water, so as to avoid thermal deformation caused by excessive temperature during the film-forming process, and the device can work stably in a high-temperature environment. A support block is installed at the top of the push rod to increase the contact area with the support ring at the bottom of the lower thermal insulation layer, so as to keep the lifting process stable. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required to be used in the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0018] Figure 1 It is a schematic diagram of the linkage lifting mechanism of the present invention applied to a vertical epitaxial device when the lower thermal insulation layer is not lifted;

[0019] Figure 2 It is a schematic diagram of the structure of the linkage lifting mechanism of the present invention applied to a vertical epitaxial device;

[0020] Figure 3 For Figure 2 the enlarged schematic diagram at A;

[0021] Figure 4 It is a schematic diagram of the linkage lifting mechanism of the present invention applied to a vertical epitaxial device after the lower thermal insulation layer is lifted;

[0022] Description of the reference numerals in the drawings: 1 - reaction chamber, 2 - transfer channel, 3 - gate valve, 4 - handling system, 5 - base, 6 - lower thermal insulation layer, 7 - rotating shaft, 8 - rotating chamber, 9 - linkage lifting mechanism, 10 - quartz shaft sleeve, 11 - support block, 12 - support ring, 13 - wafer, 14 - upper thermal insulation layer, 15 - push rod, 16 - bellows, 17 - push rod fixing seat, 18 - slide rail, 19 - cooling water seat, 20 - lifting seat, 21 - lifting frame, 22 - lifting motor seat, 23 - driving mechanism, 24 - extension pipe, 25 - water outlet, 26 - sealing ring groove, 27 - water inlet. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0023] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0024] The object of the present invention is to provide a linkage lifting mechanism applied to a vertical epitaxial device to solve the problems existing in the above-mentioned prior art. By operating one lifting mechanism, synchronous lifting on both sides can be achieved.

[0025] To make the above objects, features, and advantages of the present invention more obvious and understandable, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0026] The present invention provides a linkage lifting mechanism applied to a vertical epitaxial device, such as Figure 1 、 Figure 2 、 Figure 3 and Figure 4As shown in the figure, it includes a pedestal 5 located at the central position of the reaction chamber 1. The top of the pedestal 5 is used to load the substrate. A wafer 13 is provided on the substrate. The bottom of the pedestal 5 is connected to a rotating shaft 7. The rotating shaft 7 passes through the central through-hole of the bottom plate of the reaction chamber 1 and is then connected to a rotating motor. The rotating motor is located in a rotating chamber 8 with an open top. The top of the rotating chamber 8 is fixedly and sealedly connected to the central through-hole of the bottom plate of the reaction chamber 1; an upper heat-insulating layer 14 is annularly provided on the inner wall of the reaction chamber 1. A lower heat-insulating layer 6 that can be lifted is provided below the upper heat-insulating layer 14. A transfer channel 2 is provided on the side wall of the reaction chamber 1. A gate valve 3 is provided outside the transfer channel 2. A handling system 4 is provided outside the gate valve 3. The transfer channel 2 is located at a position between the upper heat-insulating layer 14 and the lower heat-insulating layer 6; a linkage lifting mechanism 9 is provided at the outer bottom of the reaction chamber 1. The linkage lifting mechanism 9 includes a lifting frame 21. A lifting motor base 22 is fixedly connected to the middle position of the lifting frame 21. The lifting frame 21 and the lifting motor base 22 can be moved synchronously up and down through a driving mechanism 23. The driving mechanism 23 can adopt a driving motor or a hydraulic cylinder. Symmetrically arranged lifting seats 20 are fixedly connected to both ends of the lifting frame 21. Slide rails 18 are symmetrically provided outside the lifting seats 20. The lifting seats 20 are slidably connected to the corresponding slide rails 18 through sliders. A push rod 15 is connected to the top of the lifting seat 20. The tops of the two push rods 15 pass through the corresponding channel flanges at both ends of the bottom plate of the reaction chamber 1 and are nested with the support blocks based on the installation limit structure. A support ring and the lower heat-insulating layer 6 are sequentially placed on the support blocks. The end of the push rod 15 extends slightly higher than the bottom plate of the reaction chamber 1. The two push rods 15 are symmetrically distributed with the driving body of the lifting mechanism as the center and have sufficient installation movement space without interfering with external components such as the rotating chamber cavity; before the film-forming temperature-rising process starts, the lower heat-insulating layer 6 rises to block the substrate transfer channel. The driving mechanism 23 drives the lifting frame 21 to move, driving the two lifting seats 20 on both sides to move upward along the slide rails 18 and compressing the bellows 16. The push rod 15 supports the lower heat-insulating layer 6 to be lifted upward until the upper surface of the lower heat-insulating layer 6 fits with the upper heat-insulating layer 14; when the substrate is transferred, the lower heat-insulating layer 6 descends to its original position, exposing the gate valve 3 and the transfer channel 2 connecting the reaction chamber 1 and the external handling system 4.

[0027] Further preferably, a push rod fixing seat 17 is fixedly connected to the bottom of the push rod 15. The push rod fixing seat 17 is fixedly connected to the cooling device and the lifting seat 20 in sequence; the push rod fixing seat 17 and the cooling device form a combined cooling flow channel. The cooling device includes a cooling water seat 19. The inside of the push rod 15 is hollow. An outlet 25 is provided on one side of the push rod fixing seat 17, and the outlet 25 communicates with the inside of the push rod 15. An extension pipe 24 with both ends open is installed on the top of the cooling water seat 19. The extension pipe 24 passes through the push rod fixing seat 17 and is inserted into the inside of the push rod 15. An inlet 27 is provided on one side of the cooling water seat 19. One end inside the inlet 27 communicates with the bottom of the extension pipe 24. The cooling water continuously flows in the push rod cooling flow channel. An inlet 27 is provided on one side of the cooling water seat 19. The cooling water enters from the inlet 27, passes through the extension pipe 24 and reaches the end of the push rod 15 and then flows out, cooling the area where the push rod extends into the reaction chamber 1. The return water falls back along the inner wall of the push rod 15 to the push rod fixing seat 17, and then flows out along the horizontal outlet 25. A cooling jacket is designed inside the push rod 15 and the water spray outlet of the cooling water is arranged at the end of the push rod, ensuring that the heat in the end area of the push rod can be quickly conducted outwards through the cooling water, so as to avoid thermal deformation caused by excessive temperature during the film forming process.

[0028] A corrugated pipe 16 is sleeved outside the push rod 15. The bottom of the corrugated pipe 16 is connected to the push rod fixing seat 17, and the top of the corrugated pipe 16 is fixedly and sealingly connected to the channel flange. Sealing ring grooves 26 are provided on both sides of the push rod fixing seat 17. Sealing rings are fixedly installed in the sealing ring grooves 26. The upper end of the push rod fixing seat 17 is sealingly connected to the bottom of the corrugated pipe 16 through a sealing ring, and the bottom of the push rod fixing seat 17 is sealingly connected to the top of the cooling water seat 19 through a sealing ring. A support ring 12 made of quartz material is provided at the bottom of the lower thermal insulation layer 6. The bottom of the support ring 12 is fixedly connected to the top of the push rod 15 through a support block 11. A quartz shaft sleeve 10 is inserted into the top of the bottom plate channel flange of the reaction chamber 1. A quartz plate is fixedly provided on the bottom plate of the reaction chamber 1. The base 5 is arranged in the reaction chamber 1 after passing through the quartz plate.

[0029] In the description of the present invention, it should be noted that the orientation or positional relationship indicated by the terms "center", "top", "bottom", "left", "right", "vertical", "horizontal", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation of the present invention. In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance.

[0030] In the present invention, specific examples are used to illustrate the principles and implementation manners of the present invention. The description of the above embodiments is only used to help understand the method and its core idea of the present invention; at the same time, for those of ordinary skill in the art, according to the idea of the present invention, there will be changes in the specific implementation manners and application scopes. In summary, the content of this specification should not be construed as a limitation on the present invention.

Claims

1. A linkage lifting mechanism applied to a vertical epitaxial device, characterized in that: It includes a pedestal located at the central position of the reaction chamber, and the top of the pedestal is used for loading substrates; an upper heat insulation layer is annularly arranged on the inner wall of the reaction chamber, and a lower heat insulation layer capable of lifting is arranged below the upper heat insulation layer; a linkage lifting mechanism is arranged at the bottom outside the reaction chamber, the linkage lifting mechanism includes a lifting frame, a lifting motor seat is fixedly connected at the middle position of the lifting frame, the lifting frame and the lifting motor seat can be lifted synchronously through the action of a driving mechanism, symmetrically arranged lifting seats are fixedly connected at both ends of the lifting frame, a push rod is connected to the top of the lifting seat, the tops of the two push rods pass through the corresponding channel flanges at both ends of the reaction chamber bottom plate and are nested with the support blocks based on the installation limit structure, a support ring and the lower heat insulation layer are sequentially placed on the support blocks; sliding rails are symmetrically arranged outside the lifting seats, and the lifting seats are slidably connected to the corresponding side sliding rails through sliders; a push rod fixing seat is fixedly connected to the bottom of the push rod, and the push rod fixing seat is fixedly connected to the cooling device and the lifting seat in sequence at the bottom; a combined cooling flow channel is formed by the push rod fixing seat and the cooling device; the cooling device includes a cooling water seat, the inside of the push rod is hollow, a water outlet is arranged on one side of the push rod fixing seat, the water outlet is communicated with the inside of the push rod, an extension pipe with both ends open is installed on the top of the cooling water seat, the extension pipe passes through the push rod fixing seat and is inserted into the inside of the push rod, a water inlet is arranged on one side of the cooling water seat, and one end inside the water inlet is communicated with the bottom of the extension pipe; a corrugated pipe is sleeved outside the push rod, the bottom of the corrugated pipe is connected to the push rod fixing seat, and the top of the corrugated pipe is fixedly and hermetically connected to the channel flange.

2. The linkage lifting mechanism applied to a vertical epitaxial device according to claim 1, characterized in that: Sealing ring grooves are arranged on both sides of the push rod fixing seat, and sealing rings are fixedly installed in the sealing ring grooves. The upper end of the push rod fixing seat is hermetically connected to the bottom of the corrugated pipe through a sealing ring, and the bottom of the push rod fixing seat is hermetically connected to the top of the cooling water seat through a sealing ring.

3. The linkage lifting mechanism applied to a vertical epitaxial device according to claim 1, characterized in that: A rotating shaft is connected to the bottom of the pedestal, the rotating shaft passes through the central through hole of the reaction chamber bottom plate and is connected to a rotating motor, and the rotating motor is located in a rotating chamber with an open top. The top of the rotating chamber is fixedly and hermetically connected to the central through hole of the reaction chamber bottom plate.

4. The linkage lifting mechanism applied to a vertical epitaxial device according to claim 1, characterized in that: A transfer channel is arranged on the side wall of the reaction chamber, a gate valve is arranged outside the transfer channel, a handling system is arranged outside the gate valve, and the transfer channel is located at the position between the upper heat insulation layer and the lower heat insulation layer.

5. The linkage lifting mechanism applied to a vertical epitaxial device according to claim 1, characterized in that: A support ring made of quartz material is arranged at the bottom of the lower heat insulation layer, and the bottom of the support ring is fixedly connected to the top of the push rod through a support block.

6. The linkage lifting mechanism applied to a vertical epitaxial device according to claim 1, characterized in that: A quartz shaft sleeve is inserted into the top of the channel flange of the bottom plate of the reaction chamber, a quartz plate is fixedly arranged on the bottom plate of the reaction chamber, the pedestal passes through the quartz plate and is arranged in the reaction chamber, and the position of the pedestal is higher than the installation position of the quartz plate.

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